CN102234766A - Sputtering device and sputtering target cleaning method - Google Patents
Sputtering device and sputtering target cleaning method Download PDFInfo
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- CN102234766A CN102234766A CN201010160850XA CN201010160850A CN102234766A CN 102234766 A CN102234766 A CN 102234766A CN 201010160850X A CN201010160850X A CN 201010160850XA CN 201010160850 A CN201010160850 A CN 201010160850A CN 102234766 A CN102234766 A CN 102234766A
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Abstract
The invention relates to a sputtering device, comprising a sputtering cavity, a bearing part which is used for bearing an object to be coated and is arranged in the sputtering cavity, a plurality of target stands arranged around the bearing part for single sided coated target and a plurality of actuators. The sputtering cavity comprises a plurality of vents corresponding to the target stands. The actuators are used for driving the target stands to rotate to allow the target to face to the bearing, each vent is used for correspondingly introducing reactant gas to allow the sputtering device to carry out sputtering or introducing insert inert gas to clean the target. Therefore, the sputtering device can realize sputtering and target cleaning at the same time, thus improving the production efficiency. The invention further relates to a sputtering target cleaning method.
Description
Technical field
The present invention relates to a kind of sputter technology, relate in particular to a kind of sputtering apparatus and sputter and wash Target process.
Background technology
Sputter is a kind of physical gas phase deposition technology, the sputter principle is under vacuum environment, the energetic plasma bump target that utilizes glow discharge or ionic fluid to produce comes out the atom in the target and be deposited on substrate and form film from the target bombardment with the momentum tranfer system.Because sputter can be reached preferable sedimentation effect, the control of accurate composition, and lower manufacturing cost, therefore be widely used in the making of various metals and nonmetal rete in the industry.
At present, because the application of electronic product is increasingly extensive, the gorgeous color of its surface of shell generally is to adopt the mode of the energetic plasma bump target that ionic fluid produces to carry out sputter to form, and when the multilayer film of the various colors of plating, generally can use multiple target.But, (promptly after multiple different reactant gases ionization such as sputter cavity aerating oxygen, nitrogen, bombard target carrying out reactive sputter, between the multiple then reactant gases and be deposited at last by generation chemical reaction between the ion that bombards out form film on the substrate) time, owing to carry out to be subjected on the target behind the reactive sputter pollution (as: adhering to aerobic, nitride etc.) of the reactant of reactant gases and target, if the untimely target of washing, then can cause target to be poisoned, influence the plated film quality.And the envrionment conditions of sputter when washing target is different, can't carry out simultaneously, so production efficiency is lower.
Summary of the invention
In view of this, be necessary to provide higher sputtering apparatus of a kind of production efficiency and sputter to wash Target process.
A kind of sputtering apparatus, it comprise a sputter cavity, bearing part that is placed in this sputter cavity and is used to carry thing to be plated, a plurality of be located at this bearing part around and be used for single face be sticked target stand and a plurality of actuator of target.This sputter cavity comprises a plurality of ventages corresponding with a plurality of target stands.This actuator be used to drive this target stand rotates so that this target face to or back to this bearing part, each ventage is used for feeding accordingly reactant gas to be made this sputtering apparatus carry out sputter or feeds rare gas element and make this sputtering apparatus wash target.
A kind of sputter is washed Target process, it may further comprise the steps: a kind of sputter is washed Target process, it may further comprise the steps: the target stand that provides bearing part that a sputter cavity, one be placed in this sputter cavity and a plurality of single face to be sticked target, and this sputter cavity comprises a plurality of corresponding with these a plurality of target stands respectively ventages; Thing to be plated is arranged at bearing part; With at least one target face to this thing setting to be plated, in this sputter cavity, feed reactant gas from the ventage corresponding this thing to be plated is carried out sputter with the target stand at this at least one target place, simultaneously, will be at least another target back to this thing to be plated, from this ventage that target stand at another target place is corresponding at least feed rare gas element to this at least another target wash target; After washing target and finishing, rotate this at least another target place target stand so that this at least another target face to this thing to be plated, and from this at least the ventage of the target stand correspondence at another target place in this sputter cavity, feed reactant gas this thing to be plated carried out sputter.
Compared with prior art, above-mentioned sputtering apparatus in the sputter process can by a plurality of stoppers drive respectively each target stand rotate make this target face to or back to this bearing part, each ventage is used for feeding accordingly reactant gas to be made this sputtering apparatus carry out sputter or feeds rare gas element and make this sputtering apparatus wash target.This sputtering apparatus can be realized carrying out simultaneously sputter and be washed target.
Above-mentioned sputter is washed Target process, and certain target is carrying out sputter, and other targets are then being washed target simultaneously, promptly can carry out sputter simultaneously and wash target, has improved production efficiency.
Description of drawings
Fig. 1 is the schematic perspective view of sputtering apparatus provided by the invention.
Fig. 2 is the user mode figure of the sputtering apparatus among Fig. 1.
Fig. 3 washes the schema of Target process for sputter provided by the invention.
The main element nomenclature
Sputter cavity 11
Through hole 112
Bearing part 12
Target stand 13
First 131
Draw-in groove 133
Embodiment
Be described further for sputtering apparatus of the present invention and sputter are washed Target process, lift following embodiment and conjunction with figs. and be elaborated.
See also Fig. 1 and Fig. 2, be a kind of sputtering apparatus 10 provided by the invention, this sputtering apparatus can also can be general sputtering apparatus for anode for sputter coating, present embodiment is that example describes with the anode for sputter coating, and this sputtering apparatus 10 comprises a sputter cavity 11, bearing part 12, four target stands 13, four magneticss 14 and four actuators 15.The quantity that is appreciated that this target stand 13, magnetics 14 and actuator 15 can be for two or more.
This sputter cavity 11 is a round shape, and this sputter cavity 11 comprises a base plate 111.This bearing part 12 is arranged at this base plate 111 central authorities, is used to carry thing to be plated (figure does not show).
This target stand 13 comprise one towards or back to first 131 of this bearing part 12 and second 132 of being oppositely arranged with this first face.The target 16 that all has been sticked on first 131 of these four target stands 13, these four target stands 13 are located in around this bearing part 12.On this base plate 111 to offering four through holes 112 by four target stands 13.This sputter cavity 11 is provided with four ventages 113 corresponding with this target stand 13.This ventage 113 is used to feed reactant gas or rare gas element.
This magnetics 14 is attached at second 132 of this target stand 13, in order to quicken this target 16 gas ionization on every side, the bump probability between this target 16 and gaseous ion is increased.Preferably, these four magneticss 14 are arranged at this base plate 111 along the radial symmetry of this base plate 111, and it is identical to be positioned at the pole orientation of magnetics 14 of symmetry axis AB homonymy of this base plate 111.So, can improve sputtering rate.
Wherein, the distance between this target 16 and this bearing part 12 can be according to the size design of the magneticstrength that produces between the magnetics 14, and in the present embodiment, the distance between this target 16 and this bearing part 12 is 10 centimetres.
This actuator 15 comprises that a body 151 and one are from these body 151 extended rotating shafts 152, this rotating shaft 152 comprises an engagement part 152a, 13 pairs of this target stands should be offered a draw-in groove 133 by engagement part 152a, this rotating shaft 152 is passed this through hole 112 respectively and closely is connected with these four target stands 13 with these draw-in groove 133 engagings by this engagement part 152a, this rotating shaft 152 can drive 13 rotations of this target stand, make the target 16 that is arranged at this target stand 13 towards or back to this bearing part 12.Wherein, this rotating shaft 152 is a right cylinder, and this engagement part 152a is a semicylinder, and this engagement part 152a is shaped as semicircle along the radial section of this rotating shaft 152.In other embodiments, this engagement part 152a also can be other columns.Correspondingly, the shape of this draw-in groove 133 is done corresponding change, and this draw-in groove 133 can be closely cooperated with this engagement part 152a.
Particularly, in the sputter process if there are two targets 16 need wash target, then drive target stand 13 rotations of these two target 16 correspondences by this actuator 15, make these two targets 16 back to this bearing part 12, feed rare gas element from its corresponding ventage 113 and bombard this target 16, make the pollutent that adheres on these two targets 16 be bombarded out realization and wash target.All the other targets 16 that do not need to wash target carry out sputter by its corresponding ventage 113 feeding reactant gases simultaneously.So, the pollutent of being driven out of can be splashed on the thing to be plated, and the target atom that is bombarded out during sputter can be splashed on the thing to be plated, promptly realize washing target and sputter is independent of each other.Wherein, this target 16 of washing target can be decided as the case may be with the quantity of carrying out the target 16 of sputter, washing target as a target 16 can be arranged, and remaining target 16 is carrying out sputter etc.
When washing target and carry out the transition to sputter, these target stand 13 angle of rotation are not limit, as long as make the target atom of driving out of from target 16 can be splashed to this plated body.Preferably, the target atom of driving out of on this target 16 can be tried one's best fully be deposited in the surface of this plated body, promptly this target 16 is over against this bearing part 12.Carrying out the transition to from sputter when washing target, these target stand 13 angle of rotation are not limit yet, as long as make the target atom of driving out of from target 16 can not be deposited in the surface of this plated body.Preferably, 13 rotations of this target stand make this target 16 from over against the Rotate 180 degree.
See also Fig. 3, the invention still further relates to a kind of sputter and wash Target process, this sputter is washed Target process can use a plurality of targets 16, in the present embodiment, describes as example to use four targets 16, specifically may further comprise the steps:
Step S10: the target stand 13 that provides bearing part 12 that a sputter cavity 11, one be placed in this sputter cavity 11 and a plurality of single face to be sticked target 16, this sputter cavity 11 comprise a plurality of corresponding with this a plurality of target stand 13 respectively ventages 113;
Step S12: thing to be plated is arranged at bearing part 12;
Step S14: two targets 16 towards this thing setting to be plated, are fed reactant gas from the ventage 113 corresponding with the target stand 13 at these two target 16 places this thing to be plated is carried out sputter in this sputter cavity 11; Simultaneously, with other two targets 16 back to this thing to be plated, from these ventages 113 that target stand 13 at two target 16 places is corresponding in addition feed rare gas elementes to this in addition two targets 16 wash target;
Step S16: after washing target and finishing, rotate this in addition two target 16 places target stand 13 so that in addition two targets 16 towards this thing to be plated, and from this in addition the ventage 113 of target stand 13 correspondences at two target 16 places in this sputter cavity 11, feed reactant gas this thing to be plated carried out sputter.
More than in four targets 16 if having one contaminated, then can wash target by a target 16, and other three targets 16 are at sputter.In washing the target process, the target of not washing target can carry out sputter earlier, and sputter again hockets after target to be washed is finished.Wherein, the quantity of this target 16 can be decided as required.
Above-mentioned sputtering apparatus in the sputter process can by a plurality of stoppers drive respectively each target stand rotate make this target face to or back to this bearing part, each ventage is used for feeding accordingly reactant gas to be made this sputtering apparatus carry out sputter or feeds rare gas element and make this sputtering apparatus wash target.This sputtering apparatus can be realized carrying out simultaneously sputter and be washed target.
Above-mentioned jet-plating method, certain target is carrying out sputter, and other targets are then being washed target simultaneously, promptly can carry out sputter simultaneously and wash target, have improved production efficiency.
Be understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change the protection domain that all should belong to claim of the present invention with distortion.
Claims (9)
1. sputtering apparatus, it comprises a sputter cavity, one be placed in this sputter cavity and be used to carry thing to be plated bearing part and a plurality of be located at this bearing part around and be used for the be sticked target stand of target of single face, it is characterized in that: this sputter cavity comprises a plurality of ventages corresponding with a plurality of target stands, this sputtering apparatus also comprises a plurality of actuators, this actuator be used to drive this target stand rotates so that this target face to or back to this bearing part, each ventage is used for feeding accordingly reactant gas to be made this sputtering apparatus carry out sputter or feeds rare gas element and make this sputtering apparatus wash target.
2. sputtering apparatus as claimed in claim 1 is characterized in that: this actuator comprises a body and one from the extended rotating shaft of this body, and this rotating shaft can drive this target stand rotation, make the target face that is arranged at this target stand to or back to this bearing part.
3. sputtering apparatus as claimed in claim 2 is characterized in that: this rotating shaft comprises an engagement part, and this target stand closely is connected this rotating shaft and this four target stands by this engagement part with this draw-in groove engaging to offering a draw-in groove in the engagement part.
4. sputtering apparatus as claimed in claim 3 is characterized in that: this rotating shaft is a right cylinder, and this engagement part is a semicylinder, and this engagement part is shaped as semicircle along the radial section of this rotating shaft.
5. sputtering apparatus as claimed in claim 1 is characterized in that: this target stand comprise one can towards or back to first of this bearing part, this target is arranged at this first.
6. sputtering apparatus as claimed in claim 5 is characterized in that: this target stand also comprises one relative with this first second, and this sputtering apparatus also comprises a plurality of magneticss, and this magnetics is attached at this second.
7. sputtering apparatus as claimed in claim 6, it is characterized in that: this sputter cavity is a round shape, it comprises a base plate, and these a plurality of magneticss are arranged at this base plate along the radial symmetry of this base plate, and it is identical to be positioned at the pole orientation of magnetics of symmetry axis homonymy.
8. sputtering apparatus as claimed in claim 1 is characterized in that: this sputtering apparatus when sputter this target over against this bearing part, this target stand Rotate 180 degree when washing target.
9. a sputter is washed Target process, and it may further comprise the steps:
The target stand that provides bearing part that a sputter cavity, one be placed in this sputter cavity and a plurality of single face to be sticked target, this sputter cavity comprises a plurality of corresponding with these a plurality of target stands respectively ventages;
Thing to be plated is arranged at bearing part;
With at least one target face to this thing setting to be plated, in this sputter cavity, feed reactant gas from the ventage corresponding this thing to be plated is carried out sputter with the target stand at this at least one target place, simultaneously, will be at least another target back to this thing to be plated, from this ventage that target stand at another target place is corresponding at least feed rare gas element to this at least another target wash target;
After washing target and finishing, rotate this at least another target place target stand so that this at least another target face to this thing to be plated, and from this at least the ventage of the target stand correspondence at another target place in this sputter cavity, feed reactant gas this thing to be plated carried out sputter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010160850XA CN102234766A (en) | 2010-04-30 | 2010-04-30 | Sputtering device and sputtering target cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010160850XA CN102234766A (en) | 2010-04-30 | 2010-04-30 | Sputtering device and sputtering target cleaning method |
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| CN102234766A true CN102234766A (en) | 2011-11-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010160850XA Pending CN102234766A (en) | 2010-04-30 | 2010-04-30 | Sputtering device and sputtering target cleaning method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101184864A (en) * | 2005-10-18 | 2008-05-21 | 株式会社爱发科 | Sputtering apparatus |
| CN102127740A (en) * | 2010-01-19 | 2011-07-20 | 鸿富锦精密工业（深圳）有限公司 | Sputtering device |
| CN102127739A (en) * | 2010-01-13 | 2011-07-20 | 鸿富锦精密工业（深圳）有限公司 | Sputtering device |
-
2010
- 2010-04-30 CN CN201010160850XA patent/CN102234766A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101184864A (en) * | 2005-10-18 | 2008-05-21 | 株式会社爱发科 | Sputtering apparatus |
| CN102127739A (en) * | 2010-01-13 | 2011-07-20 | 鸿富锦精密工业（深圳）有限公司 | Sputtering device |
| CN102127740A (en) * | 2010-01-19 | 2011-07-20 | 鸿富锦精密工业（深圳）有限公司 | Sputtering device |
Non-Patent Citations (1)
| Title |
|---|
| 关旭东编著: "《硅集成电路工艺基础》", 31 December 2003, 北京大学出版社 * |
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Application publication date: 20111109 |