CN102222885A - IGBT (insulated gate bipolar translator) protective circuit - Google Patents
IGBT (insulated gate bipolar translator) protective circuit Download PDFInfo
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- CN102222885A CN102222885A CN2011101670914A CN201110167091A CN102222885A CN 102222885 A CN102222885 A CN 102222885A CN 2011101670914 A CN2011101670914 A CN 2011101670914A CN 201110167091 A CN201110167091 A CN 201110167091A CN 102222885 A CN102222885 A CN 102222885A
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Abstract
The invention relates to an IGBT (insulated gate bipolar translator) protective circuit which is applied to the power field, metallurgical field and other fields in which an IGBT is used as a core device. The IGBT protective circuit comprises an over-current and short circuit protective circuit, an over-voltage protective detection circuit and a temperature protective circuit, wherein the current and short circuit protective circuit, the over-voltage protective detecting circuit and the temperature protective circuit are connected with an IGBT and a controller respectively; and the controller, a driving circuit and the IGBT are connected with one another in sequence. Compared with the prior art, the IGBT protective circuit has the benefits that the device takes effective protective measures in the aspects such as over-voltage, over-current, over-heat and the like; good effects can be obtained during the practical application, so that the IGBT can be ensured to work safely and reliably; and the requirement of the IGBT protection can be met, so that the IGBT protective circuit has good stability, strong anti-interference, high reliability and long service life.
Description
Technical field
The present invention relates to a kind of IGBT protective circuit, be applied to electric power, metallurgy and all use IGBT other field as core devices.
Background technology
Static reacance generator SVG (Static Var Generator) is an important content in the flexible ac transmission system technology, and its major function is the effect of playing dynamic reactive generation, reactive power compensation, voltage support in system, improving system stability.At present, the method of improving quality of voltage is that the static reactive power compensation device reduces voltage fluctuation and voltage is asymmetric with traditional SVC (Static Var Compensator), and eliminate Voltage unbalance with mechanical switched capacitor or reactor, use the filter harmonic carcellation.But the realization of these measures and control are all not too flexible, relatively expensive, the maintenance difficult of equipment price in addition, thereby effect is not fine in real system is used.The SVG device with its flexibly the dynamic adjustments performance overcome these deficiencies.The core of SVG device is an inverter circuit, and its direct voltage after with rectification carries out inversion producing and the corresponding alternating voltage of system, thereby produces required interchange reactive power.After utilizing the IGBT intelligent object, inverter circuit is all to have obtained greatly optimizing on volume, performance, stability or control mode.
In in the powerful switching power unit, IGBT is because its control Driver Circuit is simple, operating frequency is higher, capacity is bigger, progressively replaces thyristor or GTO.But in switching power unit, because it is operated in high frequency and high voltage, greatly under the condition of electric current, make its easy damage, in addition, power supply is as the prime of system, the stress that makes it bear owing to the influence that is subjected to reasons such as power network fluctuation, thunderbolt is bigger, so the reliability of IGBT is directly connected to the reliability of power supply.Thereby, when selecting IGBT except will doing derate considers, a link that needs emphasis to consider when the protection design of IGBT also is the power supply design.
Thereby the protection of IGBT becomes a bigger problem, and the producer of each application and the manufacturer of IGBT are all in the protection of different IGBT being studied corresponding IGBT.If the protection of IGBT design is bad, the phenomenon of aircraft bombing or fault misdescription will appear.
Summary of the invention
For solving prior art problems, the purpose of this invention is to provide a kind of IGBT protective circuit, can satisfy the requirement of IGBT protection, good stability, strong interference immunity, reliability height, long service life.
For achieving the above object, the present invention is achieved through the following technical solutions:
The IGBT protective circuit; comprise overcurrent and short-circuit protection circuit, overvoltage protection testing circuit, temperature protection circuit; electric current and short-circuit protection circuit, overvoltage protection testing circuit, temperature protection circuit are connected with IGBT and controller respectively, and controller, drive circuit, IGBT are connected successively.
Compared with prior art, the invention has the beneficial effects as follows:
This device in overvoltage, overcurrent, overheated etc. all take effective safeguard measure aspect several, all can obtain good effect in actual applications, can guarantee that IGBT works safely and reliably; Satisfy the requirement of IGBT protection, good stability, strong interference immunity, reliability height, long service life.
Description of drawings
Fig. 1 is the structured flowchart of IGBT protective circuit.
Embodiment
See Fig. 1; the IGBT protective circuit; comprise overcurrent and short-circuit protection circuit, overvoltage protection testing circuit, temperature protection circuit; electric current and short-circuit protection circuit, overvoltage protection testing circuit, temperature protection circuit are connected with IGBT and controller respectively, and controller, drive circuit, IGBT are connected successively.
Because IGBT is the higher device of current density, when overcurrent or short circuit took place, the electric current that flows through in the device very easily made the tube core junction temperature of element internal raise greater than rated value, causes device failure.The rated designs junction temperature of one IGBT is 125 ℃, and when junction temperature Tj surpassed 150 ℃, IGBT will burst.Therefore, the response time of the current foldback circuit of IGBT must be fast, is preferably in 10us and finishes with interior.In the most circuit, it is the main cause of damaging IGBT that the overcurrent of IGBT damages.If IGBT is in overcurrent or short-circuit condition, this moment, IGBT was turn-offed in the running of overcurrent and short-circuit protection circuit.
The IGBT overvoltage protection also is a very important protection, and the IGBT module has an electric pressure, and this voltage is exactly Vces, is the limiting value of bearing forward blocking voltage in fact, surpasses this voltage, and IGBT will be breakdown.Passive device is such as inductance; electric capacity etc. all have can bear certain due to voltage spikes Δ V; different with them; IGBT can not bear the due to voltage spikes above Vces; the effect of excess voltage protection will be controlled at the spike that power cell produces within the reasonable range exactly, if surpass the value of certain qualification, will be uploaded to controller; send the indication of reporting to the police, turn-off IGBT.
The temperature protection of IGBT also is the pith of power cell; if the junction temperature Tjmax of IGBT＞150 ℃; IGBT will burst so; we measure the temperature switch that the radiator temperature element adopts IGBT; temperature by the monitoring radiator is delivered to temperature monitoring loop on the power cell plate to the state of switch; in case the temperature of radiator exceeds the scope point of temperature relay; the temperature switch action; IGBT is operated within the scope of a safety; guaranteed that power cell works normally; if fault can pinpoint the problems timely, and implement protection in the very first time.
Claims (1)
1.IGBT protective circuit; it is characterized in that; comprise overcurrent and short-circuit protection circuit, overvoltage protection testing circuit, temperature protection circuit; electric current and short-circuit protection circuit, overvoltage protection testing circuit, temperature protection circuit are connected with IGBT and controller respectively, and controller, drive circuit, IGBT are connected successively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101670914A CN102222885A (en) | 2011-06-20 | 2011-06-20 | IGBT (insulated gate bipolar translator) protective circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101670914A CN102222885A (en) | 2011-06-20 | 2011-06-20 | IGBT (insulated gate bipolar translator) protective circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102222885A true CN102222885A (en) | 2011-10-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101670914A Pending CN102222885A (en) | 2011-06-20 | 2011-06-20 | IGBT (insulated gate bipolar translator) protective circuit |
Country Status (1)
| Country | Link |
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| CN (1) | CN102222885A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103033732A (en) * | 2012-11-09 | 2013-04-10 | 浙江大学 | Insulated gate bipolar transistor (IGBT) fault detection circuit |
| WO2017071365A1 (en) * | 2015-10-27 | 2017-05-04 | 全球能源互联网研究院 | Digitally driven igbt current detection system and detection method therefor |
| CN112134261A (en) * | 2020-08-27 | 2020-12-25 | 上海沪工焊接集团股份有限公司 | Continuous overload protection and power device cooling control method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101593968A (en) * | 2008-05-30 | 2009-12-02 | 比亚迪股份有限公司 | The over-current protection method of insulated gate bipolar transistor and device |
| CN201656755U (en) * | 2010-03-25 | 2010-11-24 | 成都盟升科技有限公司 | Super-power IGBT (Insulated Gate Bipolar Translator) driving and protecting circuit |
| CN202094614U (en) * | 2011-06-20 | 2011-12-28 | 辽宁省电力有限公司丹东供电公司 | IGBT (Insulated Gate Bipolar Translator) protective circuit |
-
2011
- 2011-06-20 CN CN2011101670914A patent/CN102222885A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101593968A (en) * | 2008-05-30 | 2009-12-02 | 比亚迪股份有限公司 | The over-current protection method of insulated gate bipolar transistor and device |
| CN201656755U (en) * | 2010-03-25 | 2010-11-24 | 成都盟升科技有限公司 | Super-power IGBT (Insulated Gate Bipolar Translator) driving and protecting circuit |
| CN202094614U (en) * | 2011-06-20 | 2011-12-28 | 辽宁省电力有限公司丹东供电公司 | IGBT (Insulated Gate Bipolar Translator) protective circuit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103033732A (en) * | 2012-11-09 | 2013-04-10 | 浙江大学 | Insulated gate bipolar transistor (IGBT) fault detection circuit |
| CN103033732B (en) * | 2012-11-09 | 2015-05-20 | 浙江大学 | Insulated gate bipolar transistor (IGBT) fault detection circuit |
| WO2017071365A1 (en) * | 2015-10-27 | 2017-05-04 | 全球能源互联网研究院 | Digitally driven igbt current detection system and detection method therefor |
| CN112134261A (en) * | 2020-08-27 | 2020-12-25 | 上海沪工焊接集团股份有限公司 | Continuous overload protection and power device cooling control method |
| CN112134261B (en) * | 2020-08-27 | 2024-05-28 | 上海沪工焊接集团股份有限公司 | Continuous overload protection and power device cooling control method |
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| C06 | Publication | ||
| PB01 | Publication | ||
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Owner name: RONGXIN POWER ELECTRONIC CO., LTD. STATE GRID CORP Free format text: FORMER OWNER: RONGXIN POWER ELECTRONIC CO., LTD. Effective date: 20121214 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20121214 Address after: 118000 Zhenxing Road, Zhenxing District, Liaoning, Dandong, No. 8, No. five Applicant after: Dandong Power Supply Company of Liaoning Electric Power Co., Ltd. Applicant after: Rongxin Power Electronic Co., Ltd. Applicant after: State Grid Corporation of China Address before: 118000 Zhenxing Road, Zhenxing District, Liaoning, Dandong, No. 8, No. five Applicant before: Dandong Power Supply Company of Liaoning Electric Power Co., Ltd. Applicant before: Rongxin Power Electronic Co., Ltd. |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111019 |