CN102213694A - Method for detecting defects of crucible - Google Patents
Method for detecting defects of crucible Download PDFInfo
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- CN102213694A CN102213694A CN2011100878027A CN201110087802A CN102213694A CN 102213694 A CN102213694 A CN 102213694A CN 2011100878027 A CN2011100878027 A CN 2011100878027A CN 201110087802 A CN201110087802 A CN 201110087802A CN 102213694 A CN102213694 A CN 102213694A
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- crucible
- pulse
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- defects
- products
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- Crystals, And After-Treatments Of Crystals (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
The invention discloses a method for detecting the defects of a crucible. Pulse reflection type detection is used in the method, wherein electric pulse with short duration is transmitted to the crucible to be detected to excite a probe to transmit pulse ultrasonic waves and receive pulse signals which are reflected back from a sample; and the defects are judged according to the return time and amplitude of detection signals. The method disclosed by the invention has the advantages of high accuracy and high relevance ratio of products and guarantees the pass yield of the products.
Description
Technical field
The present invention relates to a kind of detection method, particularly a kind of detection method that adopts the crucible inherent vice of pulse reflection detection.
Background technology
The high-purity quartz crucible is to produce the necessary quartz container of silicon single crystal body.Draw in the production run at silicon single crystal, with the carrier that uses silica crucible as the fusion HIGH-PURITY SILICON, by drawing bar in silica crucible the melt liquid, satisfy the monocrystal of step drawing by silicon, in whole process of production, the purity of silica crucible and defective control have been proposed very high requirement, and present controlling level both domestic and external also adopts preliminary manual detection, and the bubble of inner surface of crucible, stain etc. are controlled by examination criteria.
Summary of the invention
The purpose of this invention is to provide a kind of employing pulse reflection and detect, time of return by detection signal and amplitude are made the whether detection method of the crucible defective that defectiveness is judged of crucible.
The objective of the invention is to be achieved through the following technical solutions:
A kind of crucible defect inspection method, it is characterized in that: adopt pulse reflection to detect, give the very short electric pulse of crucible emission duration to be measured, the incentive probe emission pulse ultrasonic, and be received in the pulse signal that reflects in the sample, make judgement by the time of return and the amplitude of detection signal.
By the hand getting technique scheme, the present invention has following beneficial effect:
The crucible inherent vice that adopts pulse reflection to detect, the degree of accuracy height is stopped the shipment of defectiveness product to greatest extent and is caused quality accident.
Description of drawings
Fig. 1 is a schematic diagram of the present invention.
Wherein: A: detect ripple and begin; B: defective place; C: detect ripple and finish.
Embodiment
According to embodiment the present invention is described in further detail below.
The top product of current crucible is new high-tech product one a pure quartz glass crucible.Silica crucible is the expendable vessel that draw large-diameter monocrystalline silicon, every production one stove monocrystalline silicon earthenware snail of just using up.Monocrystalline silicon is the starting material of producing large scale integrated circuit, and is very harsh to the requirement of crucible.The high-purity quartz crucible is to draw large-diameter monocrystalline silicon, the requisite basic material of development large scale integrated circuit.The high-purity quartz crucible is to produce the necessary quartz container of silicon single crystal body.Draw in the production run at silicon single crystal,, in silica crucible, the melt liquid, progressively draw out the monocrystal of silicon by drawing bar with the carrier that uses silica crucible as the fusion HIGH-PURITY SILICON.
The employing pulse reflection detects, give the very short electric pulse of crucible emission duration to be measured, the incentive probe emission pulse ultrasonic, and be received in the pulse signal that reflects in the sample, make the judgement that whether has defective and defect size by the time of return and the amplitude of detection signal.
Fig. 1 is a schematic diagram of the present invention, the amplitude and the time relation of ultrasonic signal are shown with rectangular coordinate system, horizontal ordinate is the time, and ordinate is a signal amplitude, ultrasonicly propagates in crucible, the velocity of sound is constant, travel-time can become distance, then can obtain the distance of reflecting surface apart from the plane of incidence, and the thickness of crucible all is more uniform, if inner defectiveness is easy to scanning and draws.
Obviously, the above embodiment of the present invention only is for example of the present invention clearly is described, and is not to be qualification to embodiments of the present invention.For those of ordinary skill in the field, can also make other multi-form variation and changes on the basis of the above description.Here can't give exhaustive to all embodiments.Everyly belong to the row that conspicuous variation that technical scheme of the present invention amplifies out or change still are in protection scope of the present invention.
Claims (1)
1. crucible defect inspection method, it is characterized in that: adopt pulse reflection to detect, give the very short electric pulse of crucible emission duration to be measured, the incentive probe emission pulse ultrasonic, and be received in the pulse signal that reflects in the sample, make judgement by the time of return and the amplitude of detection signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100878027A CN102213694A (en) | 2011-04-08 | 2011-04-08 | Method for detecting defects of crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100878027A CN102213694A (en) | 2011-04-08 | 2011-04-08 | Method for detecting defects of crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102213694A true CN102213694A (en) | 2011-10-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100878027A Pending CN102213694A (en) | 2011-04-08 | 2011-04-08 | Method for detecting defects of crucible |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102213694A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114371223A (en) * | 2022-03-16 | 2022-04-19 | 浙江大学杭州国际科创中心 | Silicon carbide crystal growth detection device and method and silicon carbide crystal growth furnace |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03254118A (en) * | 1990-03-02 | 1991-11-13 | Sumitomo Electric Ind Ltd | Molecular beam cell |
| JP2003520346A (en) * | 1999-07-09 | 2003-07-02 | ペシネイ レナリュ | Improved method and apparatus for measuring inclusions in liquid metal tanks by ultrasound |
| CN1553131A (en) * | 2003-12-18 | 2004-12-08 | 钢铁研究总院 | Composite crucible for smelting magnesium material and preparing method thereof |
| CN101135673A (en) * | 2006-08-30 | 2008-03-05 | 瓦克化学有限公司 | Method for the nondestructive material testing of highly pure polycrystalline silicon |
| CN101619929A (en) * | 2009-07-08 | 2010-01-06 | 南京宝泰特种材料有限公司 | Red copper/stainless steel composite board crucible and preparation method |
| CN201653926U (en) * | 2009-12-03 | 2010-11-24 | 特变电工新疆新能源股份有限公司 | Quartz crucible detection device |
-
2011
- 2011-04-08 CN CN2011100878027A patent/CN102213694A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03254118A (en) * | 1990-03-02 | 1991-11-13 | Sumitomo Electric Ind Ltd | Molecular beam cell |
| JP2003520346A (en) * | 1999-07-09 | 2003-07-02 | ペシネイ レナリュ | Improved method and apparatus for measuring inclusions in liquid metal tanks by ultrasound |
| CN1553131A (en) * | 2003-12-18 | 2004-12-08 | 钢铁研究总院 | Composite crucible for smelting magnesium material and preparing method thereof |
| CN101135673A (en) * | 2006-08-30 | 2008-03-05 | 瓦克化学有限公司 | Method for the nondestructive material testing of highly pure polycrystalline silicon |
| CN101619929A (en) * | 2009-07-08 | 2010-01-06 | 南京宝泰特种材料有限公司 | Red copper/stainless steel composite board crucible and preparation method |
| CN201653926U (en) * | 2009-12-03 | 2010-11-24 | 特变电工新疆新能源股份有限公司 | Quartz crucible detection device |
Non-Patent Citations (1)
| Title |
|---|
| 邓文会: "大直径紫铜坩埚纵向、周向焊缝的超声波探伤", 《稀有金属材料与工程》, no. 1, 28 February 1990 (1990-02-28) * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114371223A (en) * | 2022-03-16 | 2022-04-19 | 浙江大学杭州国际科创中心 | Silicon carbide crystal growth detection device and method and silicon carbide crystal growth furnace |
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Application publication date: 20111012 |