CN102208333A - Plasma etching method - Google Patents
Plasma etching method Download PDFInfo
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- CN102208333A CN102208333A CN2011101418213A CN201110141821A CN102208333A CN 102208333 A CN102208333 A CN 102208333A CN 2011101418213 A CN2011101418213 A CN 2011101418213A CN 201110141821 A CN201110141821 A CN 201110141821A CN 102208333 A CN102208333 A CN 102208333A
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Abstract
The invention discloses a plasma etching method which comprises the following steps: providing a dielectric layer on which an organic material layer is formed, wherein a lithography pattern layer is formed on the surface of the organic material layer; utilizing a lithography pattern layer mask to convert a CO2 and CO mixed gas or CO2 and CO mixed gas utilized as etching gas into a plasma form; and etching the organic material layer by using the converted CO2 and CO mixed gas or CO2 and the CO mixed gas until the dielectric layer is exposed. The organic material layer etched by using the plasma etching method is good in uniformity and a transferred pattern is high in uniformity.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of method for etching plasma.
Background technology
Along with the integrated level raising of semiconductor device, the live width of semiconductor device is more and more littler and more and more higher for the requirement of semiconductor technology, and plasma etch process becomes one of important process of present semiconductor device preparation.
Existing plasma etch process feeds etching gas usually in plasma processing apparatus, and the described etching gas of ionization becomes plasma, utilizes described plasma that wafer to be etched is carried out etching.Existing method for etching plasma forms the photoresist figure at laminar surface to be etched usually, is that mask carries out etching to described layer to be etched with described photoresist figure, particularly, comprises the steps:
Please refer to Fig. 1, Semiconductor substrate 100 is provided, described Semiconductor substrate 100 surfaces are formed with etching target 110; Described etching target 110 is formed with photoresist figure 120; Concrete, described etching target 110 materials are dielectric layer;
Please refer to Fig. 2, using plasma is handled described photoresist figure 120, makes the live width of described photoresist figure 120 satisfy the etching requirement;
Please refer to Fig. 3, is mask with the described photoresist figure 120 after handling, and the described etching target 110 of etching is until form figure to be formed in described etching target 110.
At publication number is the contents that disclose more relevant method for etching plasma in the Chinese patent file of CM101465287A.
But, along with the integrated level of semiconductor device further improves, it is increasing that using plasma is handled the difficulty of described photoresist figure 120, and mask also not only is the organic substance of single coating, the multiple-level stack structure rete of multiple material is used as the mask of method for etching plasma, thereby makes that the etching difficulty of mask is increasing.
Summary of the invention
The problem that the present invention solves provides a kind of method for etching plasma, can improve the homogeneity of mask etching.
For addressing the above problem, the invention provides a kind of method for etching plasma, comprise dielectric layer is provided, described dielectric layer surface is formed with organic material layer, and described organic material laminar surface is formed with the litho pattern layer; With described litho pattern layer mask, be O to etching gas
2Mist or CO with CO
2With the mist plasma of CO, adopt the O of plasma
2Mist or CO with CO
2With the mist of CO, described organic material layer is carried out etching until exposing described dielectric layer.
Optionally, when etching gas be CO and O
2Mist the time, O
2With the CO flow-rate ratio be 3: 1～1: 5.
Optionally, when etching gas be CO
2During with the mist of CO, O
2With the CO flow-rate ratio be 5: 1～1: 5.
Optionally, the technological parameter of plasma etching gas is: etching cavity pressure is 5～100mT, frequency 13～120MHZ.
Optionally, described organic material layer thickness is 150nm to 500nm.
Optionally, described dielectric layer comprises first dielectric layer and is positioned at the barrier layer on the first dielectric layer surface.
Optionally, the litho pattern layer comprises: the separator that is positioned at the organic material laminar surface; Be positioned at the photoresist layer of insulation surface.
Optionally, described separator is single coating or multiple-level stack structure.
Optionally, when described separator was single coating, described insolated layer materials was the organic material that is doped with silicon.
Optionally, when described separator was the multiple-level stack structure, described separator comprised: the low temperature oxide layer and the bottom anti-reflection layer that is formed on the low-temperature oxidation laminar surface that are formed on described organic material laminar surface.
Optionally, described organic material layer is carried out etching when exposing the barrier layer, remove described photoresist layer and described bottom anti-reflection layer until exposing low temperature oxide layer.
Optionally, described dielectric layer material is the low k dielectric material.
Compared with prior art, embodiments of the invention have the following advantages: it is O that embodiments of the invention adopt etching gas
2Mist or CO with CO
2With the mist plasma of CO, adopt the O of plasma
2Mist or CO with CO
2Mist with CO, described organic material layer is carried out etching until exposing the barrier layer, the mist of CO is mixed in employing, when the etching organic material layer, sidewall at organic material layer forms polymer, improve anisotropic etching, after passing through the etching transition diagram, good at the figure pattern that organic material layer forms, the straight wall of figure reduces the isotropism damage, the organic material layer good uniformity after the etching, shift pattern homogeneity height, and the litho pattern layer adaptability height of the method for etching plasma etching that provides of the embodiment of the invention.
Description of drawings
Fig. 1 to Fig. 3 is existing plasma etch process process schematic diagram;
Fig. 4 is the method for etching plasma schematic flow sheet of the embodiment of the invention;
Fig. 5 to Fig. 7 is the method for etching plasma process schematic diagram of the embodiment of the invention;
Fig. 8 is the method for etching plasma experimental result schematic diagram of the embodiment of the invention.
Embodiment
Along with the integrated level of semiconductor device further improves, the wafer size that carries described semiconductor device is increasing, wafer size is from 6 inches, 8 inches are developed to 12 inches, more and more large-sized wafer makes that the distribution of photoresist figure is more and more wider, and that using plasma is handled the difficulty of described photoresist figure is increasing, it is poor to occur being distributed in the photoresist figure in crystal round fringes zone easily and be distributed in wafer zone line photoresist figure homogeneity after plasma treatment, and the mask that is formed on the etching target surface also not only is the organic substance of single coating, the multiple-level stack structure rete of multiple material is used as the mask of method for etching plasma, thereby makes that the etching difficulty of mask is increasing.
For this reason, the present inventor provides a kind of method for etching plasma through a large amount of research, please refer to Fig. 4, comprises the steps:
Step S101 provides dielectric layer, and described dielectric layer surface is formed with organic material layer, and described organic material laminar surface is formed with the litho pattern layer;
Step S102 with described litho pattern layer mask, is O to etching gas
2Mist or CO with CO
2With the mist plasma of CO, adopt the O of plasma
2Mist or CO with CO
2With the mist of CO, described organic material layer is carried out etching until exposing described dielectric layer.
Embodiments of the invention adopt the O of plasma
2Mist or CO with CO
2With the mist of CO described organic material layer is carried out etching, avoid the defective of the existing described organic material layer homogeneity of etching technics etching difference, thereby the mask homogeneity that is positioned at diverse location that makes etching form is good, improves the quality of subsequent etching, in addition, adopt the O of plasma
2Mist or CO with CO
2With the mist etching technics of CO can be in the described organic material layer process of etching, form polymeric layer at described organic material layer sidewall, thereby shift the quality of litho pattern in the raising etching technics, and can also control the critical size when shifting litho pattern.Further, CO
2More excellent with the mist etching technics etching effect of CO.
Below in conjunction with accompanying drawing specific embodiments of the invention are described in detail, Fig. 5 to Fig. 7 is a method for etching plasma embodiment process schematic diagram provided by the invention.
Execution in step S101, please refer to Fig. 5, substrate 200 is provided, described substrate 200 surfaces are formed with first dielectric layer 210, described first dielectric layer 210 surfaces are formed with barrier layer 220,220 surfaces, described barrier layer are formed with organic material layer 230, and described organic material layer 230 surfaces are formed with separator 240, and described separator 240 is formed with photoresist layer 250.
Described substrate 200 can be substrate silicon, silicon-on-insulator substrate (SOI) or epitaxial silicon substrate; Described substrate 200 can also be for being formed with the substrate of semiconductor device layer, for example, and the substrate that has the silicon substrate of covering dielectric and metal film, the substrate of section processes (part that comprises integrated circuit and other elements), patterning or be not patterned.
Described first dielectric layer 210 can be silica, silicon oxynitride, described first dielectric layer 210 is used for isolating and is formed on the suprabasil electricity component of semiconductor and provides the electricity platform for semiconductor device, in present embodiment, described first dielectric layer, 210 materials are low k dielectric, need to prove, when described first dielectric layer, 210 materials are low k dielectric, because the low k dielectric material is subjected to containing the F plasma attack easily, in existing etching technics, first dielectric layer 210 of low k dielectric material is directly exposed to and contains the F plasma or the surface has only thin barrier layer, and first dielectric layer 210 of low k dielectric material sustains damage easily.
Described barrier layer 220 materials are silica; the silica of present embodiment for adopting tetraethyl orthosilicate (TEOS) to generate as reactant; described barrier layer 220 is used for the polishing stop layer that subsequent chemical-mechanical polishing is formed on the rete on 220 surfaces, barrier layer, and described barrier layer 220 also be used to protect the low k dielectric material in etching process not by plasma damage.
Described organic material layer 230 is used for as bottom photoresist layer (Bottom Photo Resist), described organic material layer can be avoided the not enough defective of existing single coating litho pattern layer etching precision, particularly, when adopting single coating litho pattern layer, because existing etching precision is more and more littler, make that single coating litho pattern layer thickness is also more and more thinner, but in etching target, plasma is known from experience the single coating litho pattern of loss layer, thin photoresist can be depleted in etching process, thereby can't play the effect of mask, and the embodiment of the invention adopts described organic material layer 230 to be used for as the bottom photoresist layer, and described organic material layer 230 thickness are 150nm to 500nm; And with the figure transfer of litho pattern layer 250 to described organic material layer 230, thereby not only overcome the not enough defective of single coating photoresist pattern etching precision, and have the low advantage of figure roughness that is positioned at fringe region of figure transfer after the etching.
Described separator 240 is used to improve the exposure technology of photoetching process, and the gas injury litho pattern layer 250 that produces in the time of can stopping the described organic material layer 230 of etching guarantees to form for the described organic material layer 230 of mask etching at litho pattern layer 250 precision of figure transfer.
Described separator 240 also can also can be the multiple-level stack structure for single coating; when separator 240 is single coating; described separator 240 is for being doped with the organic material of silicon; the organic material separator 240 that is doped with silicon can be in etching process and etching gas reaction; form fine and close rete, thereby in the pattern transfer processes of litho pattern layer 250, protect litho pattern layer 250.
In the present embodiment, described separator 240 is the multiple-level stack structure, comprising: the low temperature oxide layer 241 and the bottom anti-reflection layer 242 that is formed on low temperature oxide layer 241 surfaces that are formed on described organic material layer 230 surfaces.
The gas injury litho pattern layer 250 that described low temperature oxide layer 241 produces when stopping the described organic material layer 230 of etching guarantees to form for the described organic material layer 230 of mask etching at litho pattern layer 250 precision of figure transfer; Described bottom anti-reflection layer 242 is used to improve the exposure technology of photoetching process.Need to prove, adopt the separator 240 of multiple-level stack structure to improve the exposure technology of photoetching process and stop that etching gas damage litho pattern layer 250 effect are preferable.
Described photoresist layer 250 materials are organic material, described photoresist layer 250 is formed with etching pattern, described photoresist layer 250 is used for the mask of etching technics, need to prove, described photoresist layer 250 thickness are generally thinner, and thickness is 100nm to 400nm, the optical source wavelength of described photoresist layer 250 thickness and exposure, the material and the process of litho pattern layer have relation, and those skilled in the art can select described photoresist layer 250 thickness according to the photoetching process parameter of reality.
Execution in step S102 please refer to Fig. 6, is mask with described photoresist layer 250, adopts the described separator 240 of plasma etching that contains F, until exposing organic material layer 230.
The plasma that contains F can be to comprising C
xF
yThe etching gas plasma form because in the present embodiment, described separator 240 comprises: be formed on the low temperature oxide layer 241 on described organic material layer 230 surfaces and be formed on the bottom anti-reflection layer 242 on low temperature oxide layer 241 surfaces; Accordingly, be mask with described litho pattern layer 250, adopt plasma etching bottom anti-reflection layer 242 and the low temperature oxide layer 241 contain F, with the design transfer of described photoresist layer 250 to bottom anti-reflection layer 242 and low temperature oxide layer 241.
Need to prove, when described separator 240 is single coating, to separator 240 time, the organic material separator 240 that is doped with silicon can form fine and close rete in etching process and etching gas reaction with the design transfer of described litho pattern layer 250.
Execution in step S103 please refer to Fig. 7, is mask with the described separator after described photoresist layer 250, the etching 240, is O to etching gas
2Mist or CO with CO
2With the mist plasma of CO, adopt the O of plasma
2Mist or CO with CO
2With the mist of CO, described organic material layer 230 is carried out etching until exposing barrier layer 220.
The present inventor finds through a large amount of experiments, behind the existing described organic material layer 230 of etching, the figure transfer homogeneity is bad, trace it to its cause, the inventor finds, existing etching technics live width controllability when the described organic material layer 230 of etching is low, and at the prior art defective, the present inventor invents the O that adopts plasma earlier
2Mist or CO with CO
2With the mist of CO live width controllability height during the described organic material layer 230 of etching not only, and 230 homogeneity of the organic material layer after the etching are good, in order further to improve organic material layer 230 homogeneity after the etching, the inventor carries out a series of creative experiment, finds to be CO and O when etching gas
2Mist the time, O
2With the CO flow-rate ratio be 3: 1～1: 5, organic material layer 230 homogeneity after the etching are more excellent, and when etching gas be CO
2During with the mist of CO, O
2With the CO flow-rate ratio be 5: 1～1: 5, organic material layer 230 homogeneity after the etching are more excellent, and when the material of described litho pattern layer 250 changed, the mixing etching gas homogeneity of above-mentioned two kinds of proportionings was also better, the litho pattern layer adaptability height of etching; Further, when the etching organic material layer, sidewall at organic material layer forms polymer, improve anisotropic etching, by behind the etching transition diagram, good at the figure pattern that organic material layer forms, the straight wall of figure, reduce the isotropism damage, the organic material layer good uniformity after the etching, the present inventor adopts O respectively
2With the CO flow-rate ratio be 5: 1, O
2With the CO flow-rate ratio be 3: 2, O
2With the CO flow-rate ratio be 5: 2, O
2With the CO flow-rate ratio be 4: 1, O
2With the CO flow-rate ratio be 1: 1, O
2With the CO flow-rate ratio is to test at 99: 1, and experimental data shows that organic material layer 230 homogeneity that adopt after the said ratio etching are more excellent.
Need to prove, because etching is subjected to many effects of process parameters, the inventor can't implement to obtain one by one, but, the etching cavity pressure of the plasma etching gas of the mixing etching gas of above-mentioned two kinds of proportionings is 5～100mT, during frequency 13～120MHZ, the litho pattern layer adaptability height of organic material layer 230 homogeneity height and etching.
Need to prove that also the inventor carries out a series of contrast experiment, find that working as etching gas is CO
2During with the mist of CO, adopt O
2With the CO flow-rate ratio be 5: 1～1: 5 organic material layer 230 etching results than when etching gas be CO and O
2Mist the time, O
2With the CO flow-rate ratio be 3: 1～1: 5 etching result, homogeneity is more excellent.
In the present embodiment, also need to prove,, remove described litho pattern layer 250 and described bottom anti-reflection layer 242 until exposing low temperature oxide layer 241 when described organic material layer 230 being carried out etching when exposing barrier layer 220.
Concrete, at the O that adopts plasma
2Mist or CO with CO
2When described organic material layer 230 being carried out etching with the mist of CO; described etching technics can be removed described litho pattern layer 250 and described bottom anti-reflection layer 242 simultaneously; and low temperature oxide layer 241 is owing to have the selective etching ratio with described litho pattern layer 250 and described bottom anti-reflection layer 242; thereby play the effect of the described organic material layer 230 of protection, make the described organic material layer 230 that needs protection not be etched.
Further, the present inventor provides and adopts the embodiment of the invention that organic material layer 230 is carried out the experimental result of etching, please refer to Fig. 8, and the inventor adopts the O of 850sccm successively
2, 750sccm O
2O with 100sccmCO mist, 450sccm
2O with 400sccmCO mist, 350sccm
2O with 500sccmCO mist, 250sccm
2With the CO of 600sccmCO mist and 850sccm as etching gas, plasmaization under same condition is carried out etching to the organic material layer 230 of same thickness, the inventor finds, adopts O
2With the mist of CO be that 30Mt, frequency 60MHZ, power are under the plasma condition of 500W as etching gas at etching cavity, the organic material layer etch rate of diverse location is more even, the pattern homogeneity height of transfer, further, the inventor finds, along with O
2Change with the ratio of CO, the also corresponding conversion of the homogeneity of the etching rate of organic material layer 230, the inventor can select O according to the etching condition of reality
2With the ratio of CO, obtain the etching result who needs.Therefore, the method for etching plasma adjustability height that provides of the embodiment of the invention.
It is O that embodiments of the invention adopt etching gas
2Mist or CO with CO
2With the mist plasma of CO, adopt the O of plasma
2Mist or CO with CO
2Mist with CO, described organic material layer is carried out etching until exposing the barrier layer, organic material layer good uniformity after the etching shifts pattern homogeneity height, and the litho pattern layer adaptability height of the method for etching plasma etching that provides of the embodiment of the invention.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (12)
1. method for etching plasma comprises:
Dielectric layer is provided, and described dielectric layer surface is formed with organic material layer, and described organic material laminar surface is formed with the litho pattern layer;
It is characterized in that,
With described litho pattern layer mask, be O to etching gas
2Mist or CO with CO
2With the mist plasma of CO, adopt the O of plasma
2Mist or CO with CO
2With the mist of CO, described organic material layer is carried out etching until exposing described dielectric layer.
2. method for etching plasma as claimed in claim 1 is characterized in that, when etching gas is CO and O
2Mist the time, O
2With the CO flow-rate ratio be 3: 1～1: 5.
3. method for etching plasma as claimed in claim 1 is characterized in that, when etching gas is CO
2During with the mist of CO, O
2With the CO flow-rate ratio be 5: 1～1: 5.
4. as any described method for etching plasma of claim 1 to 3, it is characterized in that the technological parameter of plasma etching gas is: etching cavity pressure is 5～100mT, frequency 13～120MHZ.
5. method for etching plasma as claimed in claim 1 is characterized in that, described organic material layer thickness is 150nm to 500nm.
6. method for etching plasma as claimed in claim 1 is characterized in that, described dielectric layer comprises first dielectric layer and is positioned at the barrier layer on the first dielectric layer surface.
7. method for etching plasma as claimed in claim 1 is characterized in that, the litho pattern layer comprises:
Be positioned at the separator of organic material laminar surface; Be positioned at the photoresist layer of insulation surface.
8. method for etching plasma as claimed in claim 1 is characterized in that, described separator is single coating or multiple-level stack structure.
9. method for etching plasma as claimed in claim 8 is characterized in that, when described separator was single coating, described insolated layer materials was the organic material that is doped with silicon.
10. method for etching plasma as claimed in claim 8, it is characterized in that, when described separator was the multiple-level stack structure, described separator comprised: the low temperature oxide layer and the bottom anti-reflection layer that is formed on the low-temperature oxidation laminar surface that are formed on described organic material laminar surface.
11. method for etching plasma as claimed in claim 10 is characterized in that, described organic material layer is carried out etching when exposing the barrier layer, removes described photoresist layer and described bottom anti-reflection layer until exposing low temperature oxide layer.
12. method for etching plasma as claimed in claim 1 is characterized in that, described dielectric layer material is the low k dielectric material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101418213A CN102208333A (en) | 2011-05-27 | 2011-05-27 | Plasma etching method |
| TW100141808A TW201248715A (en) | 2011-05-27 | 2011-11-16 | Method for plasma etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101418213A CN102208333A (en) | 2011-05-27 | 2011-05-27 | Plasma etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102208333A true CN102208333A (en) | 2011-10-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101418213A Pending CN102208333A (en) | 2011-05-27 | 2011-05-27 | Plasma etching method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102208333A (en) |
| TW (1) | TW201248715A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610511A (en) * | 2012-03-21 | 2012-07-25 | 中微半导体设备(上海)有限公司 | Method for removing photoresist |
| CN103227108A (en) * | 2012-01-31 | 2013-07-31 | 中微半导体设备(上海)有限公司 | Method for etching organic matter layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101131928A (en) * | 2006-08-21 | 2008-02-27 | 兰姆研究有限公司 | Trilayer resist organic layer etch |
| CN101369537A (en) * | 2007-08-17 | 2009-02-18 | 东京毅力科创株式会社 | Method of manufacturing semiconductor device and storing medium |
| CN101241859B (en) * | 2007-02-06 | 2010-04-14 | 东京毅力科创株式会社 | Plasma etching method, plasma etching apparatus, control program and computer storage medium |
| CN101866848A (en) * | 2010-04-29 | 2010-10-20 | 中微半导体设备(上海)有限公司 | Plasma etching method for etching organic matter layer |
-
2011
- 2011-05-27 CN CN2011101418213A patent/CN102208333A/en active Pending
- 2011-11-16 TW TW100141808A patent/TW201248715A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101131928A (en) * | 2006-08-21 | 2008-02-27 | 兰姆研究有限公司 | Trilayer resist organic layer etch |
| CN101241859B (en) * | 2007-02-06 | 2010-04-14 | 东京毅力科创株式会社 | Plasma etching method, plasma etching apparatus, control program and computer storage medium |
| CN101369537A (en) * | 2007-08-17 | 2009-02-18 | 东京毅力科创株式会社 | Method of manufacturing semiconductor device and storing medium |
| CN101866848A (en) * | 2010-04-29 | 2010-10-20 | 中微半导体设备(上海)有限公司 | Plasma etching method for etching organic matter layer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227108A (en) * | 2012-01-31 | 2013-07-31 | 中微半导体设备(上海)有限公司 | Method for etching organic matter layer |
| CN103227108B (en) * | 2012-01-31 | 2016-01-06 | 中微半导体设备(上海)有限公司 | A kind of organic matter layer lithographic method |
| CN102610511A (en) * | 2012-03-21 | 2012-07-25 | 中微半导体设备(上海)有限公司 | Method for removing photoresist |
| TWI497236B (en) * | 2012-03-21 | 2015-08-21 |
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| Publication number | Publication date |
|---|---|
| TW201248715A (en) | 2012-12-01 |
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Application publication date: 20111005 |