CN102207764A - Cpu供电电路 - Google Patents

Cpu供电电路 Download PDF

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Publication number
CN102207764A
CN102207764A CN2010101353002A CN201010135300A CN102207764A CN 102207764 A CN102207764 A CN 102207764A CN 2010101353002 A CN2010101353002 A CN 2010101353002A CN 201010135300 A CN201010135300 A CN 201010135300A CN 102207764 A CN102207764 A CN 102207764A
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Prior art keywords
field effect
effect transistor
chip
cpu
driving
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柳志达
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN2010101353002A priority Critical patent/CN102207764A/zh
Priority to US12/771,093 priority patent/US8250388B2/en
Publication of CN102207764A publication Critical patent/CN102207764A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dc-Dc Converters (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Amplifiers (AREA)

Abstract

一种CPU供电电路,包括一脉宽调制控制器芯片、一与所述脉宽调制控制器芯片相连的驱动芯片、与所述驱动芯片相连的一第一场效应管及一第二场效应管,所述驱动芯片接有一电源,所述脉宽调制控制器芯片输出脉宽调制信号至所述驱动芯片以控制所述第一场效应管及第二场效应管的导通/截止状态从而控制输出至CPU的电压,所述驱动芯片的电源输入端接有一电压调节器,所述电压调节器将所述电源的电压调节至一优化电压值提供给所述驱动芯片内部的电路。本发明CPU供电电路可提高驱动芯片的输出效率、节省电能。

Description

CPU供电电路
技术领域
本发明涉及一种供电电路,特别是一种电脑主板上的CPU(CentralProcessing Unit,中央处理器)供电电路。
背景技术
一种如图1所示的传统的CPU供电电路包括一PWM(Pulse-WidthModulation,脉宽调制)控制器芯片及一驱动芯片,所述驱动芯片连接至一对MOSFET(场效应管),所述PWM控制器芯片输出PWM信号至所述驱动芯片以控制所述MOSFET的导通、断开的次序及时间从而调整输出至CPU的电压。PWM信号的占空比越大,输出电压越大;PWM信号的占空比越小,输出电压越小。所述驱动芯片可为一ADP3120A芯片,其包括一Vcc电源引脚,当该Vcc电源引脚的电压范围在4.15V~13.2V之间时,ADP3120A芯片可正常工作。ADP3120A芯片在一最佳工作电压(如10V)下工作时,其输出效率最佳,可降低电能消耗,提高整个供电电路效能。但是目前主板上的电源仅能提供12V、5V的电压至所述驱动芯片,因此驱动芯片的输出效率不能最优化,造成不必要的电能浪费。
发明内容
鉴于以上内容,有必要提供一种较为节能的CPU供电电路。
一种CPU供电电路,包括一脉宽调制控制器芯片、一与所述脉宽调制控制器芯片相连的驱动芯片、与所述驱动芯片相连的一第一场效应管及一第二场效应管,所述驱动芯片接有一电源,所述脉宽调制控制器芯片输出脉宽调制信号至所述驱动芯片以控制所述第一场效应管及第二场效应管的导通/截止状态从而控制输出至CPU的电压,所述驱动芯片的电源输入端接有一电压调节器,所述电压调节器将所述电源的电压调节至一优化电压值提供给所述驱动芯片内部的电路。
相较于现有技术,本发明CPU供电电路利用所述电压调节器将输出至所述驱动芯片的电源调节至一优化电压值,驱动芯片在该优化电压值下工作时,其输出效率最高,可节省电能。
附图说明
图1是一传统的CPU供电电路的组成图。
图2是本发明CPU供电电路一较佳实施方式的组成图。
图3是本发明CPU供电电路另一较佳实施方式的组成图。
主要元件符号说明
PWM控制器芯片             10
驱动芯片                  20
电压调节器                21、30
第一运算放大器            23
第二运算放大器            25
二极管                    D1
电容                      C1-C4
电阻                      R1-R2
电感                      L1
具体实施方式
请参阅图2,本发明CPU供电电路一较佳实施方式包括一PWM控制器芯片10、一驱动芯片20、一第一场效应管Q1及一第二场效应管Q2。所述第一场效应管Q1及第二场效应管Q2均为N沟道金属氧化物半导体场效应管。所述驱动芯片20的一对驱动信号输出端与所述第一场效应管Q1及第二场效应管Q2相连,所述PWM控制器芯片10输出PWM信号至所述驱动芯片20以控制所述第一场效应管Q1及第二场效应管Q2的导通/截止次序及时间,从而控制输出至主板上CPU的电压。所述第一场效应管Q1在一个周期内导通的时间越长,输出至CPU的电压越高。
所述驱动芯片20包括一电压调节器21、一第一运算放大器23及一第二运算放大器25。所述电压调节器21的输入端与所述驱动芯片20的电源引脚Vcc相连并集成于所述驱动芯片20内,所述电压调节器21的输出端与所述第二运算放大器25相连。所述驱动芯片20的电源引脚Vcc与主板上的12V电源相连并接有一滤波电容C1。所述第一运算放大器23的一第一接线端接有一二极管D1及滤波电容C2,所述二极管D1的阳极与所述12V电源相连,阴极与所述第一运算放大器23的第一接线端相连。所述第一运算放大器23的一第二接线端(驱动信号输出端)通过一电阻R2与所述第一场效应管Q1的栅极相连,所述第一运算放大器23的一第三接线端通过串接的电阻R1及电阻C3连接至第一运算放大器23的第一接线端。所述第二运算放大器25的驱动信号输出端与所述第二场效应管Q2的栅极相连。所述第一场效应管Q1的漏极与所述12V电源相连,源极与所述第二场效应管Q2的漏极相连,所述第二场效应管Q2的源极接地。所述第一场效应管Q1的源极及第二场效应管Q2的漏极共同连接至一电感L1的一端,电感L1的另一端连接至一电压输出端Vout;一电容C4的一端与该电压输出端Vout相连,另一端接地。
所述CPU供电电路工作时,所述PWM控制器芯片10输出一PWM信号至所述驱动芯片20,当所述PWM信号为高电平时,所述驱动芯片20的第一运算放大器输出驱动信号使场效应管Q1导通、Q2截止,所述电感L1及电容C4开始储能;当所述PWM信号为低电平时,所述驱动芯片20的第二运算放大器输出驱动信号使场效应管Q2导通、Q1截止,所述电感L1对电容C4充电。由于所述电感L1及电容C4具有阻止电流及电压突变的作用,所述CPU供电电路可输出稳定的低压直流电压(如1.3V)至主板上的CPU。经所述电压调节器21的调节作用,所述12V电源可降低至一稳定的优化电压(如10V)并输出至所述驱动芯片20内的第二运算放大器25,在该优化电压值下,所述驱动芯片20输出效率最优,可减少不必要的电能浪费。
请参阅图3,在本发明CPU供电电路另一较佳实施方式中,一电压调节器30连接于所述12V电源及所述驱动芯片20的电源引脚Vcc之间,可将12V电源降压至一优化的电压值(如10V)输出至所述驱动芯片20,因而使所述驱动芯片20的输出效率最优。
在本发明较佳实施方式中,所述电压调节器21或30可包括电阻、稳压二极管、三极管等元件。所述PWM控制器芯片10可外接多个驱动芯片,以组成多相供电电路给主板上的CPU供电。

Claims (10)

1.一种CPU供电电路,包括一脉宽调制控制器芯片、一与所述脉宽调制控制器芯片相连的驱动芯片、与所述驱动芯片相连的一第一场效应管及一第二场效应管,所述驱动芯片接有一电源,所述脉宽调制控制器芯片输出脉宽调制信号至所述驱动芯片以控制所述第一场效应管及第二场效应管的导通/截止状态从而控制输出至CPU的电压,其特征在于:所述驱动芯片的电源输入端接有一电压调节器,所述电压调节器将所述电源的电压调节至一优化电压值提供给所述驱动芯片内部的电路。
2.如权利要求1所述的CPU供电电路,其特征在于:所述电压调节器连接于所述驱动芯片的电源引脚及所述电源之间。
3.如权利要求1所述的CPU供电电路,其特征在于:所述电压调节器设置于所述驱动芯片内部并连接至所述电源。
4.如权利要求3所述的CPU供电电路,其特征在于:所述驱动芯片包括一第一运算放大器,所述第一运算放大器通过一二极管与所述的电源相连,所述二极管的阳极与所述电源相连,阴极与所述第一运算放大器相连。
5.如权利要求4所述的CPU供电电路,其特征在于:所述第一运算放大器的输出端与所述第一场效应管的栅极相连。
6.如权利要求5所述的CPU供电电路,其特征在于:所述驱动芯片还包括一第二运算放大器,所述第二运算放大器与所述电压调节器的输出端相连。
7.如权利要求6所述的CPU供电电路,其特征在于:所述第二运算放大器的输出端与所述第二场效应管的栅极相连。
8.如权利要求7所述的CPU供电电路,其特征在于:所述第一场效应管及第二场效应管均为N沟道金属氧化物场效应管。
9.如权利要求8所述的CPU供电电路,其特征在于:所述第一场效应管的漏极与所述电源相连,所述第一场效应管的源极与所述第二场效应管的漏极相连,所述第二场效应管的源极接地。
10.如权利要求9所述的CPU供电电路,其特征在于:所述CPU供电电路还包括一电感及一与该电感相连的电容,所述电感的一端与所述第一场效应管的源极与所述第二场效应管的漏极相连,另一端与所述电感相连并输出电压至CPU。
CN2010101353002A 2010-03-30 2010-03-30 Cpu供电电路 Pending CN102207764A (zh)

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US12/771,093 US8250388B2 (en) 2010-03-30 2010-04-30 Power supply circuit for CPU

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103302988A (zh) * 2012-03-06 2013-09-18 珠海天威技术开发有限公司 存储芯片及其电源管理方法、耗材容器、成像设备

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JP4426955B2 (ja) * 2004-11-30 2010-03-03 株式会社ルネサステクノロジ 半導体装置
US9362822B2 (en) * 2012-12-04 2016-06-07 Rf Micro Devices, Inc. Average load current detector for a multi-mode switching converter
CN111625078B (zh) * 2020-05-21 2022-03-18 深圳微步信息股份有限公司 计算机、主板和cpu供电控制电路

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US7265601B2 (en) * 2004-08-23 2007-09-04 International Rectifier Corporation Adaptive gate drive voltage circuit
US7202643B2 (en) * 2004-11-12 2007-04-10 Texas Instruments Incorporated High efficiency DC-to-DC synchronous buck converter
US8125200B2 (en) * 2009-04-29 2012-02-28 Dell Products L.P. Systems and methods for intelligently optimizing operating efficiency using variable gate drive voltage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103302988A (zh) * 2012-03-06 2013-09-18 珠海天威技术开发有限公司 存储芯片及其电源管理方法、耗材容器、成像设备
CN103302988B (zh) * 2012-03-06 2016-04-06 珠海天威技术开发有限公司 存储芯片及其电源管理方法、耗材容器、成像设备

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Application publication date: 20111005