CN102206807A - Method and device for producing flat panel solar heat-absorption coated board - Google Patents
Method and device for producing flat panel solar heat-absorption coated board Download PDFInfo
- Publication number
- CN102206807A CN102206807A CN2010101373167A CN201010137316A CN102206807A CN 102206807 A CN102206807 A CN 102206807A CN 2010101373167 A CN2010101373167 A CN 2010101373167A CN 201010137316 A CN201010137316 A CN 201010137316A CN 102206807 A CN102206807 A CN 102206807A
- Authority
- CN
- China
- Prior art keywords
- chamber
- target
- substrate
- continuous coating
- heat absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010521 absorption reaction Methods 0.000 title claims abstract description 103
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 238000000576 coating method Methods 0.000 claims abstract description 130
- 239000011248 coating agent Substances 0.000 claims abstract description 127
- 238000004519 manufacturing process Methods 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 43
- 238000004544 sputter deposition Methods 0.000 claims abstract description 42
- 239000012528 membrane Substances 0.000 claims description 87
- 239000002131 composite material Substances 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 33
- 238000005477 sputtering target Methods 0.000 claims description 33
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 28
- 239000007888 film coating Substances 0.000 claims description 26
- 238000009501 film coating Methods 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000012298 atmosphere Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 23
- 230000033764 rhythmic process Effects 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 14
- 238000007747 plating Methods 0.000 claims description 13
- 238000005516 engineering process Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims description 6
- 230000002452 interceptive effect Effects 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
- 150000002927 oxygen compounds Chemical class 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 230000001413 cellular effect Effects 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 80
- 230000008901 benefit Effects 0.000 abstract description 6
- 239000002346 layers by function Substances 0.000 abstract description 2
- 239000003638 chemical reducing agent Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000000376 reactant Substances 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 230000001020 rhythmical effect Effects 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a method for producing a flat panel solar heat-absorption coated board, which comprises steps as follows: large-area single metal sheets, each of which is more than 600 millimeters long and more than 300 millimeters wide, are used as substrates; the substrates are transmitted by a live roller shaft system, which is dragged by a reducer through a notched belt or chain, on a horizontal coating device which is horizontally arranged; as a vacuum valve of the coating device is opened or closed, the substrates enter the horizontal coating device in batches; in a continuous coating chamber, the substrates pass through a plurality of sputtering modules which are arranged according to a film system; and when the substrates pass through below the target, an infrared reflecting layer, a heat-absorption functional layer, an antireflection layer and the like in a solar heat-absorption functional film are sequentially deposited. The invention also provides a device for producing a flat panel solar heat-absorption coated board, which is composed of a front vacuum locking chamber, a front holding chamber, a continuous coating chamber, a back holding chamber and a back locking chamber. The heat-absorption coated board produced by the method and device provided by the invention has the advantages of high absorptivity and low emissivity. The invention has the advantages of high production efficiency and low cost.
Description
Technical field:
The present invention relates to solar energy thermal utilization field, particularly be method and the device of producing panel solar heat absorption plated film plate.
Background technology:
Solar energy resources is the new forms of energy of 21 century, and solar refrigeration, solar water heater, solar electrical energy generation, seawater cleaning etc. all are the important use fields.The selective heat-absorbing film has the feature performance benefit of visible light-near-infrared region high-absorbility, infrared light district high-reflectivity, and its production method and device become the important research direction of solar utilization technique.The production method of the solar selective heat-absorbing film that adopts has following several types at present, and all has corresponding limitation:
The glass tube vacuum cast: seal at the two ends of two Glass tubings that diameter is different, space between two pipes is evacuated when forming sealing-in, the outer wall of interior pipe deposits solar energy heat absorbing coating, absorbing too can radiating capacity and elevate the temperature, heat energy is taken away in inner water flowing, finishes the photo-thermal switching process.Its weak point is: collide frangible, the easy bombing of dry combustion method when cutting off the water supply, simultaneously unsuitable as building outer wall, roof when building energy conservation is integrated.
The ordinary flat heat absorbing coating: adopt modes such as plating, brushing to form heat absorbing coating on metal substrate, its weak point is outer red emission rate height, and solar absorptance is low, and the sun power utilising efficiency is low, and this mode of production has certain pollution to environment simultaneously.
The auxiliary mode depositing solar of electron gun evaporation and ion source heat absorbing coating, this mode has the high advantage of sedimentation rate.Its shortcoming is the fabric width that the evaporation cloud of the plating material that obtains of single electron beam gun is not enough to covering substrate, need two electron beam gun to merge and use the homogeneity that could satisfy on the width, simultaneously because the sedimentation rate height, thicknesses of layers control difficulty, for the metal refining layer thickness only is the sun heat absorption rete of the medium-metal inteferometer coating set type about 10nm, the control more difficult realization of optical thickness precision when 2 to the 3nm left and right sides.
Existing continuous coating apparatus is as described in the Chinese patent 200420077693.6, be a kind of to circular glass pipe plated film, whole production line from export to import to the continuous coating chamber as " formation closed loop " as described in its claim 1, workpiece is also wanted rotation, can't the production big area panel solar heat absorption plated film plate of (length direction of individual plated film plate greater than 600 millimeters, width greater than 300 millimeters).
Summary of the invention:
In view of above reason, the objective of the invention is in order to overcome above deficiency, provide production efficiency high, thicknesses of layers control is convenient, technology realizes flexibly, the method for the production panel solar heat absorption plated film plate of big area (length direction of individual plated film plate greater than 600 millimeters, width greater than 300 millimeters).
Another object of the present invention provides the production equipment of the little production panel solar heat absorption plated film plate of a kind of environmental pollution degree.
The object of the present invention is achieved like this:
The present invention produces the method for panel solar heat absorption plated film plate, this method is with the substrate of individual tinsel of big area as the solar film plating plate, substrate in interrupted mode by the initial vacuum lock chamber in the horizontal film coating apparatus, preceding holding chamber, preceding buffer zone, enter into the continuous coating chamber that has 3 groups of magnetron sputtering targets and corresponding sputtering chamber at least, substrate enters horizontally disposed rotation roll shaft a slice that the continuous coating chamber drags by step-down gear and connects a slice, continuously and smoothly's transmission, substrate is through magnetron sputtering target and corresponding sputtering chamber, on substrate, deposit interference membrane stack/antireflection layer that the infrared waves reflecting layer be made up of metallic membrane/at least one group is made up of metallic membrane or metal medium composite membrane and deielectric-coating successively, perhaps on substrate, deposit infrared waves reflecting layer/heat absorption semiconductor material film or the metal medium composite material film/antireflection layer formed by metallic membrane successively, on substrate, form the solar absorption functional membrane with this, back buffer zone is arranged behind the continuous coating chamber, back holding chamber and final vacuum lock chamber, between ambient atmosphere and the initial vacuum lock chamber, between initial vacuum lock chamber and the preceding holding chamber, between preceding holding chamber and the continuous coating chamber, between continuous coating chamber and the back holding chamber, between back holding chamber and the final vacuum lock chamber, be provided with vacuum valve between final vacuum lock chamber and the ambient atmosphere, the vacuum tightness of current final vacuum lock chamber and front and back holding chamber reaches plated film working vacuum degree 1-9 * 10 of continuous coating chamber
-1Pa, vacuum valve between each chamber and the chamber is opened and is allowed substrate enter the continuous coating chamber or to withdraw from the continuous coating chamber by rhythm in batches, before and after valve opening and closing between vacuum lock chamber and the atmosphere once pass in and out film plating substrate a slice or a collection of be a rhythm of production, be intermittently to advance sheet mode, and substrate a slice or a collection of being are walked sheet mode continuously in the continuous coating chamber, after forming the solar absorption functional membrane on the substrate, come out from back buffer zone, back holding chamber and final vacuum lock chamber successively, produce panel solar heat absorption plated film plate.Adopt length direction greater than 600 millimeters, width is greater than 300 millimeters big area, individual sheet metal conduct is as film plating substrate, the rotating roller axle system that is dragged by step-down gear process flute profile band or chain on horizontally disposed horizontal film coating apparatus transmits substrate, unlatching along with the film coating apparatus vacuum valve, substrate is a collection of to be that a rhythm of production enters horizontal film coating apparatus, film coating apparatus is linked to each other by vacuum valve the initial vacuum lock chamber successively, preceding holding chamber, the continuous coating chamber, back holding chamber and final vacuum lock chamber, in the continuous coating chamber, substrate is through a plurality of sputter module according to the configuration of film system, each sputter module is equipped with independently inflation system, the separate space chamber is set between the adjacent sputter module, substrate outwards is followed successively by interference membrane stack/antireflection layer (deielectric-coating) that infrared waves reflecting layer (metallic membrane)/at least one group is made up of metallic membrane or metal medium composite membrane and deielectric-coating through out-of-date sedimentary solar absorption functional film layer from substrate under the target position, perhaps outwards be followed successively by infrared waves reflecting layer (metallic membrane)/heat absorption semiconductor material film or metal medium composite material film/antireflection layer (deielectric-coating) from substrate, the continuous coating chamber has 3 groups of magnetron sputtering targets and corresponding sputtering chamber at least, substrate enters horizontally disposed rotation roll shaft (step-down gear is connected through flute profile band or chain with the roll shaft) transmission that the continuous coating chamber is dragged by step-down gear, a slice connects a slice, continuously and smoothly's process magnetron sputtering target and corresponding sputtering chamber, depositing solar absorptive function rete, the heat absorption plated film plate of producing has the specific absorption height, emittance is hanged down advantage, and the production efficiency height, cost is low.
The method of above-mentioned production panel solar heat absorption plated film plate, between preceding holding chamber and continuous coating chamber, between continuous coating chamber and the back holding chamber, substrate is intermittently advancing sheet fast or going out sheet mode by rhythm of production, become substrate and be continuously and smoothly that a slice the connects a slice mode of advancing, also promptly between preceding holding chamber and continuous coating chamber, one section buffer zone (or claiming surge chamber) is arranged between continuous coating chamber and the back holding chamber, making substrate advance sheet mode fast by rhythm of production interrupted becomes in preceding buffer zone and is continuously and smoothly's mode of advancing that a slice connects a slice and enters the continuous coating chamber, after forming the solar absorption functional membrane on the substrate, substrate is continuously and smoothly's mode of advancing that a slice connects a slice to be withdrawed from the continuous coating chamber and enters in the buffer zone of back, substrate is formed in the buffer zone of back intermittently go out sheet mode fast by rhythm of production.
The method of above-mentioned production panel solar heat absorption plated film plate, substrate sheet and sheet or batch and criticize between distance be 20 millimeters to 500 millimeters.
The method of above-mentioned production panel solar heat absorption plated film plate, cut apart by dividing plate between continuous coating chamber at least 3 group sputtering targets and the corresponding sputtering chamber and form independent cavity separately, independent cavity has independently magnetron sputtering power supply and technology ventilating control cellular system separately, and every group of sputtering target can be distinguished independent control power and the required process gas of plated film.
The method of above-mentioned production panel solar heat absorption plated film plate, sputtering target and corresponding sputtering chamber have a vacuum suction chamber at least as isolated chamber between them, to keep between target position, the chamber not gas blowby, avoid interfering with each other between each chamber process gas and vacuum tightness.2 to 3 isolated chamber of bleeding are arranged, add between chamber and the chamber it is can just be by the narrow slit structure of substrate, gas blowby not between target position, the chamber can make vacuum tightness differ from an order of magnitude, avoids interfering with each other between each chamber processes atmosphere and the vacuum tightness.Sputtering target and corresponding sputtering chamber not only have inflation system, also is furnished with vacuum-pumping system separately, adopt molecular pump and the mechanical pump unit of bleeding, can make the own technology of each self-sustaining required vacuum tightness and processing atmosphere, and not be subjected to the influence of other sputtering target vacuum tightnesss and processing atmosphere.Nitrogen and/or oxygen compound (deielectric-coating) or metal medium composite membrane or heat absorption semiconductor material film, feeding amount by CONTROL PROCESS gas N2 and/or O2 and ratio are controlled the metallic element in the compound film material and the stoichiometric ratio of oxygen and/or nitrogen.
The method of above-mentioned production panel solar heat absorption plated film plate, the type of at least 3 group sputtering targets and every group of independent target of corresponding sputtering chamber are at least a in direct current planar target, direct current columnar target, midfrequent AC planar target, the midfrequent AC columnar target.
The method of above-mentioned production panel solar heat absorption plated film plate, the magnetron sputtering target of plating deielectric-coating or metal medium composite membrane or heat absorption semiconductor material film is midfrequent AC cylindricality rotary target or midfrequent AC planar target, target is a metallic target, charges into process gas Ar and N2 and/or O2 during sputter and is deposited as metal nitrogen and/or oxygen compound (deielectric-coating) or metal medium composite membrane or heat absorption semiconductor material film.Target is a metallic target, as titanium, aluminium, stainless steel etc.
The method of above-mentioned production panel solar heat absorption plated film plate, the midfrequent AC cylindricality rotary target or the midfrequent AC planar target of sputtering chamber plating deielectric-coating or metal medium composite membrane or heat absorption semiconductor material film are the A target, the direct current planar target of metal-coated membrane or infrared waves reflectance coating is the B target, the configuration of its A target and B target preface successively is that 1 to 4 B target/1 to 5 A target/1 to 4 B target/1 to 5 A target/1 to 4 B target/1 are to 5 A targets, perhaps be configured to 1 to 4 B target/1 to 5 A target/1 to 5 A targets, on substrate, deposit interference membrane stack/antireflection layer that the infrared waves reflecting layer be made up of metallic membrane/at least one group is made up of metallic membrane or metal medium composite membrane and deielectric-coating successively, perhaps on substrate, deposit infrared waves reflecting layer/heat absorption semiconductor material film or the metal medium composite material film/antireflection layer formed by metallic membrane successively, produce solar energy heat absorbing functional membrane system.Can be coated with and above-mentionedly outwards be followed successively by interference membrane stack/antireflection layer (deielectric-coating) that infrared waves reflecting layer (metallic membrane)/at least one group is made up of metallic membrane or metal medium composite membrane and deielectric-coating, perhaps outwards be followed successively by the solar energy heat absorbing functional membrane system of infrared waves reflecting layer (metallic membrane)/heat absorption semiconductor material film or metal medium composite material film/antireflection layer (deielectric-coating) from substrate from substrate.
The method of above-mentioned production panel solar heat absorption plated film plate, individual metal substrate length direction greater than 600 millimeters, width greater than 300 millimeters.
The present invention produces the device of panel solar heat absorption plated film plate, comprise the initial vacuum lock chamber, preceding holding chamber, interference membrane stack/the antireflection layer that has at least the infrared waves reflecting layer that 3 groups of magnetron sputtering targets and depositing successively on substrate of corresponding sputtering chamber be made up of metallic membrane/at least one group to form by metallic membrane or metal medium composite membrane and deielectric-coating, perhaps on substrate, deposit infrared waves reflecting layer/heat absorption semiconductor material film or the metal medium composite material film/antireflection layer formed by metallic membrane successively, on substrate, form the continuous coating chamber of solar absorption functional membrane with this, back holding chamber, the final vacuum lock chamber, magnetron sputtering target and target, power supply, process gas inlet pipe and Controlling System, vacuum-pumping system, substrate delivery mechanism, it is characterized in that substrate in interrupted mode fast by preceding holding chamber and initial vacuum lock chamber be that motor drags the rotation roll shaft by the transporting mechanism of back holding chamber and final vacuum lock chamber fast in interrupted mode equally, the roll shaft surface friction transmits substrate, between atmosphere and initial vacuum lock chamber, between final vacuum lock chamber and the atmosphere vacuum valve is arranged, between initial vacuum lock chamber and the preceding holding chamber, between back holding chamber and the final vacuum lock chamber vacuum valve is arranged, between preceding holding chamber and the continuous coating chamber, between continuous coating chamber and the back holding chamber vacuum valve that allows substrate enter the continuous coating chamber by rhythm of production in batches or withdraw from the continuous coating chamber is arranged.This device can be on metal substrate magnetron sputtering deposition solar absorption functional film layer, promptly outwards deposit interference membrane stack/antireflection layer (deielectric-coating) that infrared waves reflecting layer (metallic membrane)/at least one group is made up of metallic membrane or metal medium composite membrane and deielectric-coating successively, perhaps outwards deposit infrared waves reflecting layer (metallic membrane)/heat absorption semiconductor material film or metal medium composite material film/antireflection layer (deielectric-coating) successively from substrate from substrate.Device comprises at least 5 plated film functional compartments, be divided into initial vacuum lock chamber, preceding holding chamber, continuous coating chamber (front and rear portions is respectively equipped with surge chamber), back holding chamber, final vacuum lock chamber, vacuum valve is arranged between them, and the opening and closing of these valves make each chamber can both set up the required 1-9 of coating process * 10
-1Pa vacuum tightness, between atmosphere and preceding (back) vacuum lock chamber, valve opening is closed between preceding (back) vacuum lock chamber and preceding (back) holding chamber, substrate is piecemeal or a collection of rhythmical (withdrawing from) each chamber that enters fast of mode under the transmission of rotating roller, valve opening between preceding (back) holding chamber and the continuous coating chamber is closed, and substrate is rhythmical (withdrawing from) continuous coating chamber that enters fast of mode piecemeal or one batch of multi-disc of one batch of multi-disc under the transmission of rotating roller.
The device of above-mentioned production panel solar heat absorption plated film plate, between preceding holding chamber and continuous coating chamber, there is substrate to become the preceding buffer zone that is continuously and smoothly's mode of advancing that a slice connects a slice and enters the continuous coating chamber (or before claiming surge chamber) by advance sheet mode fast by rhythm of production interrupted, after forming the solar absorption functional membrane on the substrate, have between continuous coating chamber and the back holding chamber to make substrate be continuously and smoothly's mode of advancing that a slice connects a slice to withdraw from and form the back buffer zone (or after claiming surge chamber) that goes out sheet mode by rhythm of production interrupted fast behind the continuous coating chamber.After substrate enters the continuous coating chamber fast, the transmission speed of rotating roller become magnetron sputtering target depositing operation speed needed at a slow speed, successive, substrate travelling speed at the uniform velocity, make the substrate a slice that enters the continuous coating chamber in batches fast meet a slice or one batch of successive process magnetron sputtering target sputtering sedimentation district that connects a batch, make sheet and sheet or batch and batch between distance become as much as possible little, so that the deposition uninterruptedly, not empty sputter, raise the efficiency, the waste and the waste of time of target are saved cost when reducing empty spattering.
The device of above-mentioned production panel solar heat absorption plated film plate is being lower than rotating roller between centers laying supporting plate or the holder bar that rotates roll shaft and substrate contact surface.For prevent rotating roller during at interval greater than certain distance thin type metal substrate leading section fall at interval, the place, plane is provided with supporting plate or holder bar on the roller being lower than between the rotating roller.
The device of above-mentioned production panel solar heat absorption plated film plate at the valve place of at least 5 functional compartments of film coating apparatus, is provided with the substrate that can rise or descend with the unlatching of valve and transmits transition roll shaft or transition backing plate.What helpful substrate was crossed over valve and roller spacing between each chamber closes the transition backing plate mechanism of servo-actuated with valve opening, also can be to fill up roller, filler strip, support bar, supporting network etc.
The device of above-mentioned production panel solar heat absorption plated film plate, continuous coating chamber at least 3 group magnetron sputtering targets and corresponding sputtering chamber have dividing plate to form separate chamber separately between them, is furnished with independently pumped vacuum systems, each have independent magnetron sputtering power supply, technology loading line and control unit system, target, gas ducting, vacuum-pumping system are integrated in becomes an independent sputter module on a target pedestal or the chamber cover plate.Sputter module can be placed on the position work of any arts demand of continuous coating chamber separately, is coated with the heat absorption functional film layer that different films are with convenient realization.
The device of above-mentioned production panel solar heat absorption plated film plate, at least 3 group sputtering targets and corresponding sputtering chamber have the vacuum suction chamber that slit is arranged that a substrate is able to pass through between them at least as isolated chamber.Sputtering target and corresponding sputtering chamber have at least a sidewall to have the vacuum suction chamber of slit (can pass through substrate) as isolated chamber between them, do not establish the family of power and influence, vacuumize by slit, if 2 to 3 isolated chamber are arranged, just can make that vacuum tightness differs from an order of magnitude between the sputtering chamber, realize different inflation atmosphere and processing condition with convenient different targets chamber, be coated with the rete of unlike material.
The device of above-mentioned production panel solar heat absorption plated film plate, magnetron sputtering target are at least a in direct current planar target, direct current columnar target, midfrequent AC planar target, the midfrequent AC columnar target.Because of can arbitrary combination, the convenient heat absorption functional film layer that realizes being coated with different films system be particularly interfered the film system of membrane stack type.
The device of above-mentioned production panel solar heat absorption plated film plate, magnetron sputtering target is a midfrequent AC cylindricality rotary target.Can adopt the rete of the target of different metal material, also can directly be coated with deielectric-coating with ceramic target with different atmosphere gas realization stoichiometric ratio material.Adopt midfrequent AC cylindricality rotary target, can improve sputter rate, enhance productivity, reduce cost.
The present invention produces the method for panel solar heat absorption plated film plate, adopt length direction greater than 600 millimeters, width greater than individual tinsel of big area of 300 millimeters as substrate, in the continuous coating chamber on horizontally disposed horizontal film coating apparatus, substrate is through a plurality of sputter module according to the configuration of film system, substrate is the infrared light reflection layer/retes such as heat absorption functional layer/antireflection layer through the out-of-date heat absorption of depositing solar successively functional membrane under target position, the heat absorption plated film plate that the present invention produces has specific absorption height, advantage that emittance is low, and the production efficiency height, cost is low.The present invention also provides the device of producing panel solar heat absorption plated film plate, and the high efficiency production thicknesses of layers control of energy is convenient, technology realizes flexible, large-area panel solar heat absorption plated film plate.
Description of drawings:
Fig. 1 is a film coating apparatus overall structure synoptic diagram of the present invention.
Fig. 2 is a film coating apparatus transfer system synoptic diagram of the present invention.
Transporting mechanism synoptic diagram when Fig. 3 closes for film coating apparatus vacuum valve of the present invention.
Transmission rig synoptic diagram when Fig. 4 opens for film coating apparatus vacuum valve of the present invention.
Fig. 5 is a substrate load mode synoptic diagram.
Fig. 6 is another load mode synoptic diagram of substrate.
Fig. 7 is sputtering target and corresponding sputtering chamber synoptic diagram.
Fig. 8 is the vertical view of Fig. 7.
The panel solar heat absorption plated film plate structure synoptic diagram that Fig. 9 produces for the present invention.(having deposited interference membrane stack/antireflection layer that the infrared waves reflecting layer/metallic membrane be made up of metallic membrane and deielectric-coating are formed on the substrate).
Another panel solar heat absorption plated film plate structure synoptic diagram (having deposited infrared waves reflecting layer/metal medium composite material film/antireflection layer of forming by metallic membrane on the substrate) that Figure 10 produces for the present invention.
The heat absorption of a panel solar again plated film plate structure synoptic diagram (having deposited infrared waves reflecting layer/heat absorption semiconductor material film/antireflection layer of forming by metallic membrane on the substrate) that Figure 11 produces for the present invention.
Figure 12 is another overall structure synoptic diagram of film coating apparatus of the present invention.
Figure 13 is a film coating apparatus of the present invention overall structure synoptic diagram again.
Embodiment:
Embodiment 1:
Fig. 1～Fig. 9 has provided present embodiment 1 figure.Referring to Fig. 1, device in the present embodiment 1 comprises section 1, initial vacuum lock chamber 2, preceding holding chamber 3, continuous coating chamber 4,, back holding chamber 5, final vacuum lock chamber 6, following section 7, and the vacuum valve 8 (8a, 8b, 8c, 8d, 8f) that connects each chamber, wherein 8a, 8f are respectively the vacuum valves between forward and backward vacuum lock chamber and the ambient atmosphere, surge chamber 4M, back surge chamber 4N before the front and back ends of continuous coating chamber 4 is respectively.In continuous coating chamber 4, according to interference membrane stack (two groups)/antireflection layer 31 (present embodiment 1 solar energy decalescence films is to be specially substrate/Al infrared light reflection layer/AlN-stainless steel interference composite membrane (two groups)/AlN antireflection layer) of realizing that infrared waves reflecting layer 28/ metallic membrane 30 that deposition on the deposition substrate 27 shown in Figure 9 is made up of metallic membrane and deielectric-coating 29 are formed, in the configuration of sputtering target, be distributed in 8 magnetron sputtering targets and corresponding sputtering chamber 10a thereof successively, 10b, 10c, 10d, 10e, 10f, 10g, 10h, be followed successively by 2 B target (10a, 10b)/1 an A target (10c)/1 a B target (10d)/1 an A target (10e)/1 a B target (10f)/2 an A target (10g, 10h) (the A target is midfrequent AC cylindricality rotary target or the midfrequent AC planar target that is used to be coated with deielectric-coating or metal-dielectric composite membrane or heat absorption semiconductor film, and the B target position is used to be coated with the direct current planar target of metallic diaphragm or infrared waves reflective coating).There is the independence of isolated chamber 9 (9a, 9b, 9c, 9d, 9e, 9f, 9g9h) between each sputtering chamber with the work atmosphere environment of realizing each sputtering chamber.Also be provided with power supply in this device, process gas inlet pipe and Controlling System, vacuum-pumping system.
Fig. 2 is in the film coating apparatus in the transfer system synoptic diagram, and basal plate transmitting system is to be made of by the roll shaft 12 that chain 13 drives step-down gear 11, before and after roll shaft 12 runs through (go up section 1 beginning, to section 7) down.The rotating speed of step-down gear 11 (11a, 11b, 11c, 11d, 11e, 11f, 11g, 11h, 11i) is adjustable, separately independent control.
Fig. 3, Fig. 4 are the transporting mechanism synoptic diagram, and step-down gear 11 (11a-11i) links to each other by chain (also available flute profile band) with roll shaft 12, and the bottom of bearing fixing at chamber used at the two ends of each roll shaft.Be provided with tray 14 between roll shaft and the roll shaft, also be provided with tray 15 in the both sides of vacuum valve 8, purpose is that its front end was unlikely to scurry under the roll shaft when thin slice substrate was advanced on roll shaft.(Fig. 3 closes for vacuum valve 8 with the switching of vacuum valve 8, when Fig. 4 opens for vacuum valve 8) transition backing plate mechanism 16 (two ends are hung on the vacuum valve 8 by the short rope) fit strip 15 that rises or descends, help thin type metal substrate strides across smoothly when substrate 27 leap vacuum valves 8.
Fig. 5, Fig. 6 are the substrate load mode synoptic diagram of film coating apparatus, and Fig. 5 connects a slice load mode for a slice that film coating apparatus adopted.Substrate 27 enters initial vacuum lock chamber 2 from last section 1, preceding holding chamber 3 reaches from back holding chamber 5 and is withdrawn into final vacuum lock chamber 6, following section 7, follow the open and close of vacuum valve 8a, 8b, 8e, 8f, present fast, alternate, rhythmical transmission characteristics.And when the opening and closing of forward and backward holding chamber (3 and 5) vacuum valve (8c and 8d), substrate is made a gift to someone fast or is withdrawed from the indoor buffer zone of continuous coating (4M and 4N), the alternate substrate (transmission rhythm, speed change) under the deceleration of rotation axis transmits that enters, withdraws from by rhythm, be the uniform depositional coating that carries out that a slice meets a slice continuously and smoothly, the distance between sheet and the sheet is 20 millimeters to 500 millimeters.Fig. 6 is the another kind of load mode that film coating apparatus can adopt, and promptly a collection ofly connects a collection of mode, and this mode increases the substrate number that film coating apparatus was opened, passed in and out each time when closing to vacuum valve 8, enhances productivity.
Fig. 7, Fig. 8 are indoor sputtering target of continuous coating in the present embodiment and corresponding sputtering chamber synoptic diagram (Fig. 7, Fig. 8 are respectively side-view and vertical view).Cut apart by dividing plate 17 between sputtering target 23 and the corresponding sputtering chamber 32 and form independent cavity separately, the vacuum suction chamber that slit 33 is arranged that a substrate 27 is able to pass through is arranged as isolated chamber 34 between the sputtering chamber 32, openable target chamber case lid 18 is pressed in (pressure face has vaccum seal ring) on the chamber.Be positioned on the case lid of target chamber face molecular pump 19 and feed chambers, link to each other with mechanical pump (not drawing among the figure) by tracheae 21 simultaneously, constitute independent vacuum-pumping system by air flue 20; Two gas-filled valves 22 traverse and are positioned at sputtering target 23 both sides, pass through this chamber, its termination is connected to three gas meter 25a, 25b that control required process gas argon gas, nitrogen and oxygen of depositing solar heat absorption functional membrane respectively, the outlet of 25c through gas mixed box 24, has formed independent ventilating control system.Sputtering target 23 is the direct current planar target, is connected to shielding power supply by the power connection 26 on the target chamber case lid 18, forms independent sputtering target system.Sputtering target 23 also is adopted as midfrequent AC cylindricality rotary target, midfrequent AC planar target according to different needs.Above-mentioned vacuum-pumping system, ventilating control system, sputtering target all are integrated on the target chamber case lid (target pedestal) 18, have formed an independently sputter module, can move by the processing requirement that different films are.
During the work of this film coating apparatus, with the substrate 27 of individual tinsel of big area as the solar film plating plate, substrate 27 in interrupted mode by the initial vacuum lock chamber 2 in the horizontal film coating apparatus, preceding holding chamber 3, preceding buffer zone 4M, enter into continuous coating chamber 4, there are 8 groups of magnetron sputtering targets and corresponding sputtering chamber in continuous coating chamber 4, substrate enters horizontally disposed rotation roll shaft 12 a slices that the continuous coating chamber drags by step-down gear and connects a slice, continuously and smoothly's transmission, substrate is through magnetron sputtering target and corresponding sputtering chamber, on substrate, deposit interference membrane stack/antireflection layer that the infrared waves reflecting layer/metallic membrane be made up of metallic membrane and deielectric-coating are formed successively, on substrate, form the solar absorption functional membrane with this, back buffer zone 4N is arranged behind the continuous coating chamber, back holding chamber 5 and final vacuum lock chamber 6, between ambient atmosphere and the initial vacuum lock chamber, between initial vacuum lock chamber and the preceding holding chamber, between preceding holding chamber and the continuous coating chamber, between continuous coating chamber and the back holding chamber, between back holding chamber and the final vacuum lock chamber, be provided with vacuum valve between final vacuum lock chamber and the ambient atmosphere, the vacuum tightness of current final vacuum lock chamber and front and back holding chamber reaches plated film working vacuum degree 1-9 * 10 of continuous coating chamber
-1Pa, vacuum valve between them is opened and is allowed substrate enter the continuous coating chamber or to withdraw from the continuous coating chamber by rhythm in batches, it is a rhythm of production that valve opening and closing between front and back vacuum lock chamber and the atmosphere once passes in and out film plating substrate a collection of, sheet and sheet or batch with criticize between distance be 20 millimeters to 500 millimeters, after forming the solar absorption functional membrane on the substrate, come out from back buffer zone, back holding chamber and final vacuum lock chamber successively, produce panel solar heat absorption plated film plate.
In the present embodiment, for a kind of solar energy decalescence films that deposits medium shown in Figure 6-metal interference stack type is: substrate/Al infrared light reflection layer/two groups of AlN medium layer-stainless steels are interfered composite bed/AlN dieletric reflection layers, as follows in the sputtering target configuration: sputtering target 10a, 10b are used for deposition and adopt the direct current planar target, target is an aluminium, only charges into sputter gas Ar; 10c, 10e, 10g, 10h adopt midfrequent AC cylindricality rotary target, and target is a stainless steel, charges into sputter gas Ar and reactant gases N2; 10d, 10f adopt the direct current planar target, only charge into sputter gas Ar.Concrete technology is as follows:
The coatings thickness of " interference membrane stack " type solar energy heat absorbing plated film plate that present embodiment obtained (film is that substrate/Al infrared light reflection layer/AlN-stainless steel is interfered composite bed (two groups)/AlN antireflection layer) is followed successively by 60-200nm, 20-80nm, 10-20nm, 20-80nm, 6-12nm, 20-80nm, optimize thickness and be followed successively by 120-180nm, 40-70nm, 12-18nm, 40-70nm, 6-10nm, 40-70nm, through spectrum test, calculating, its solar absorptance is 93%, and emittance is 6%.
Embodiment 2:
Fig. 1～Fig. 8, Figure 10, Figure 12 have provided the embodiment of the invention 2 figure.Present embodiment 2 is basic same with embodiment 1, a kind of solar energy heat absorbing plated film plate of " heat absorption semiconductor material film system " type of the oxynitride that is that this example major sedimentary is shown in Figure 10 does not exist together, the film of selecting for use is substrate 27/Al infrared light reflection layer 28/CrNiOyNx semiconductor absorption layer (heat absorption semiconductor material film) 35/SiN antireflection layer 36, is substrate with the aluminium of 2000 * 1000 * 0.2mm.The structure of the load mode of the transmission system that is adopted of film coating apparatus, transmission rig, substrate, sputtering target and corresponding sputtering chamber thereof all with embodiment 1 in Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, structure shown in Figure 8 the same with mode, the difference that is according to the sedimentary solar absorbing film of institute just, the configuration of the chamber of sputtering target that continuous coating is indoor and correspondence thereof is adjusted, referring to Figure 12.
Figure 12 is a film coating apparatus overall structure synoptic diagram (vertical view) in this example, it last section 1 that comprises, initial vacuum lock chamber 2, preceding holding chamber 3, continuous coating chamber 4, back holding chamber 5, final vacuum lock chamber 6, down the front and back ends of section 7, vacuum valve 8 (8a-8f) and continuous coating chamber 4 forward and backward surge chamber 4M, 4N all with example one in shown in Figure 1 the same.In continuous coating chamber 4, according to the film system that wants sedimentary substrate/Al infrared light reflection layer/CrNiOyNx semiconductor absorption layer/SiN antireflection layer, wherein the content of the O among the CrNiOyNx, N is adjusted (inflation one hurdle in can seeing the following form) when inflation, in the configuration of sputtering target, be distributed in 7 sputtering targets and corresponding sputtering chamber 10 (10a-10g) thereof successively, be followed successively by 2 B targets (10a, 10b)/3 A targets (10c, 10d, 10e)/2 A targets (10f, 10g).There is the independence of isolated chamber 9 (9a-9f) between each sputtering chamber with the work atmosphere environment of realizing each sputtering chamber.
10a, 10b are used to be deposited on on-chip Al infrared light reflection layer, adopt the direct current planar target, and the aluminium target only charges into sputter gas Ar; 10c, 10d, 10e are used to deposit the CrNiOyNx semiconductor absorption layer, wherein the content of the O among the CrNiOyNx, N is adjusted (inflation one hurdle in can seeing the following form) when inflation, adopt midfrequent AC cylindricality rotary target, target is the CrNi alloy, charges into the same sputter gas Ar of flow and reactant gases O2, N2; 10g, 10h are used to deposit the SiN antireflection layer, adopt the midfrequent AC planar target, charge into Ar, N2.Concrete technology is as follows:
Sputtering target 10c, 10d, 10e are used for deposition with a kind of rete, and processing parameter is the same, so do not adopt isolated chamber between 10c in this example, 10d, the 10e.
Coatings thickness is followed successively by 80-200nm in this film system of sedimentary substrate in this example/Al infrared light reflection layer/CrNiOyNx semiconductor absorption layer/SiN antireflection layer, 60-160nm, 20-100nm, optimize thickness and be followed successively by 100-160nm, 80-140nm, 40-80nm is through spectrum test, calculating, its solar absorptance is 90.5%, and emittance is 9%.
Embodiment 3:
Fig. 1～Fig. 8, Figure 11, Figure 13 have provided the embodiment of the invention 3 figure.Present embodiment 3 is basic same with embodiment 1, not existing together is a kind of solar energy heat absorbing plated film plate of present embodiment 3 major sedimentary " metal medium composite material film " shown in Figure 11 (or be called " dielectric material of doping metals ") type, need with film be substrate 27/Al infrared light reflection layer 28/AlNx metal-dielectric composite layer 37/AlNy metal-dielectric composite layer 38/AlN antireflection layer 39, wherein the packing factor of Al is higher than the packing factor of Al among the AlNy among the AlNx, and equally also adopting the aluminium with 2000 * 1000 * 0.2mm is substrate.
In the present embodiment, the structure of the load mode of the transmission system that is adopted of film coating apparatus, transmission rig, substrate, sputtering target and corresponding sputtering chamber thereof all with embodiment 1 in structure shown in Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8 the same with mode, the difference that is according to the sedimentary solar absorption functional membrane of institute just, the configuration of the chamber of sputtering target that continuous coating is indoor and correspondence thereof is adjusted, referring to Figure 13.
Figure 13 is a film coating apparatus overall structure synoptic diagram (vertical view) in the present embodiment, it last section 1 that comprises, initial vacuum lock chamber 2, preceding holding chamber 3, continuous coating chamber 4, back holding chamber 5, final vacuum lock chamber 6, down the front and back ends of section 7, vacuum valve 8 (8a-8f) and continuous coating chamber 4 forward and backward surge chamber 4M, 4N all with embodiment 1 in shown in Figure 1 the same.In continuous coating chamber 4, film system by institute's deposition substrate/Al infrared light reflection layer/AlNx metal-dielectric composite layer/AlNy metal-dielectric composite layer/AlN antireflection layer, in the configuration of sputtering target, be distributed in 8 sputtering targets and corresponding sputtering chamber 10 (10a-10h) thereof successively, be followed successively by 2 B targets (10a, 10b)/2 A targets (10c, 10d)/2 A targets (10e, 10f)/2 A targets (10g, 10h).There is isolated chamber 9 (9a-9m) between each sputtering chamber, with the independence of the work atmosphere environment of realizing each sputtering chamber.
10a, 10b are used to be deposited on on-chip Al infrared light reflection layer, adopt the direct current planar target, and the aluminium target only charges into sputter gas Ar; 10c, 10d are used for depositing Al Nx metal-dielectric composite layer, adopt midfrequent AC cylindricality rotary target, and target is Al, charges into the same sputter gas Ar of flow and reactant gases N2; 10e, 10f are used for depositing Al Ny metal-dielectric composite layer, adopt midfrequent AC cylindricality rotary target, target is Al, charge into sputter gas Ar and reactant gases N2, but N2 atmosphere ratio is bigger (to be that Al drops to 30% gradually by 70%, and N rises to 70% gradually by 30%, and AlNy and AlNx difference just are this, and wherein y is that two kinds of contained Al of AlN of expression, N composition ratio are different with x); 10g, 10h are used for depositing Al N antireflection layer, adopt the midfrequent AC planar target, charge into Ar, N2.Concrete technology is as follows:
Working vacuum degree (Pa) is 2-5 * 10
-1
In the present embodiment each layer thickness of sedimentary substrate/Al infrared light reflection layer/AlNx metal-dielectric composite layer/AlNy metal-dielectric composite layer/AlN antireflective tunic system be followed successively by 80-200nm, 20-60nm, 40-80nm, 50-90nm, optimize thickness and be followed successively by 120-170nm, 30-50nm, 50-70nm, 60-80nm, through spectrum test, calculating, its solar absorptance is 95.5%, and emittance is 8%.
The various embodiments described above are that foregoing of the present invention is further described, but this should be interpreted as that the scope of the above-mentioned theme of the present invention only limits to the foregoing description.All technology that realizes based on foregoing all belong to scope of the present invention.
Claims (17)
1. produce the method for panel solar heat absorption plated film plate, this method is with the substrate of individual tinsel of big area as the solar film plating plate, substrate is rotated roll shaft in interrupted mode and transmits and to enter fast and by the initial vacuum lock chamber in the horizontal film coating apparatus, preceding holding chamber, enter into the continuous coating chamber that has 3 groups of magnetron sputtering targets and corresponding sputtering chamber at least, substrate connects a slice in continuous coating indoor horizontally disposed rotation roll shaft a slice that is dragged by step-down gear, continuously and smoothly's transmission, substrate is through magnetron sputtering target and corresponding sputtering chamber, on substrate, deposit interference membrane stack/antireflection layer that the infrared waves reflecting layer be made up of metallic membrane/at least one group is made up of metallic membrane or metal medium composite membrane and deielectric-coating successively, perhaps on substrate, deposit infrared waves reflecting layer/heat absorption semiconductor material film or the metal medium composite material film/antireflection layer formed by metallic membrane successively, thereby on substrate, form the solar absorption functional membrane, back holding chamber and final vacuum lock chamber are arranged behind the continuous coating chamber, the slice of substrate is with to advance sheet mode identical, also be to be rotated roll shaft in interrupted mode to transmit and to withdraw from fast and pass through afterwards holding chamber and final vacuum lock chamber, advance sheet, the concrete grammar of plated film and slice is: between ambient atmosphere and the initial vacuum lock chamber, between initial vacuum lock chamber and the preceding holding chamber, between preceding holding chamber and the continuous coating chamber, between continuous coating chamber and the back holding chamber, between back holding chamber and the final vacuum lock chamber, be provided with vacuum valve between final vacuum lock chamber and the ambient atmosphere, current, the final vacuum lock chamber and before, the vacuum tightness of back holding chamber reaches the plated film working vacuum degree 1-9 * 10-1Pa of continuous coating chamber, vacuum valve between each chamber and the chamber is opened and is allowed substrate enter the continuous coating chamber or to withdraw from the continuous coating chamber by rhythm of production in batches, before, vacuum valve between final vacuum lock chamber and the atmosphere open and close once pass in and out film plating substrate a slice or a collection of be a rhythm of production, be intermittently to advance sheet mode, and substrate a slice or a collection of being are walked sheet mode continuously in the continuous coating chamber, after forming the solar absorption functional membrane on the substrate, being rotated roll shaft transmits fast successively from afterwards holding chamber and final vacuum lock chamber are produced panel solar heat absorption plated film plate with the quick slice of interrupted mode.
2. the method for production panel solar heat absorption plated film plate as claimed in claim 1, it is characterized in that between preceding holding chamber and continuous coating chamber, between continuous coating chamber and the back holding chamber, substrate is intermittently advancing sheet fast or going out sheet mode by rhythm of production, become substrate and be continuously and smoothly that a slice the connects a slice mode of advancing, also promptly between preceding holding chamber and continuous coating chamber, between continuous coating chamber and the back holding chamber one section buffer zone is arranged, making substrate advance sheet mode fast by rhythm of production interrupted becomes in preceding buffer zone and is continuously and smoothly's mode of advancing that a slice connects a slice and enters the continuous coating chamber, after forming the solar absorption functional membrane on the substrate, substrate is continuously and smoothly's mode of advancing that a slice connects a slice to be withdrawed from the continuous coating chamber and enters in the buffer zone of back, substrate is formed in the buffer zone of back intermittently go out sheet mode fast by rhythm of production.
3. the method for production panel solar as claimed in claim 1 or 2 heat absorption plated film plate, it is characterized in that substrate sheet and sheet or batch and criticize between distance be 20 millimeters to 500 millimeters.
4. the method for production panel solar heat absorption plated film plate as claimed in claim 1 or 2, it is characterized in that cutting apart by dividing plate between continuous coating chamber at least 3 group sputtering targets and the corresponding sputtering chamber and form independent cavity separately, independent cavity has independently magnetron sputtering power supply and technology ventilating control cellular system separately, and every group of sputtering target distinguished independent control power and the required process gas of plated film.
5. the method for production panel solar heat absorption plated film plate as claimed in claim 1 or 2, it is characterized in that having at least between sputtering target and the corresponding sputtering chamber vacuum suction chamber as isolated chamber, to keep between target position, the chamber not gas blowby, avoid interfering with each other between each chamber process gas and vacuum tightness.
6. the method for production panel solar as claimed in claim 1 or 2 heat absorption plated film plate, the type that it is characterized in that target independent in sputtering target and the corresponding sputtering chamber are at least a in direct current planar target, direct current columnar target, midfrequent AC planar target, the midfrequent AC columnar target.
7. the method for production panel solar heat absorption plated film plate as claimed in claim 1 or 2, the magnetron sputtering target that it is characterized in that plating deielectric-coating or metal medium composite membrane or heat absorption semiconductor material film is midfrequent AC cylindricality rotary target or midfrequent AC planar target, target is a metallic target, charges into process gas Ar and N during sputter
2And/or O
2Be deposited as metal nitrogen and/or oxygen compound or metal medium composite membrane or heat absorption semiconductor material film.
8. the method for production panel solar heat absorption plated film plate as claimed in claim 7, the midfrequent AC cylindricality rotary target or the midfrequent AC planar target that it is characterized in that sputtering chamber plating deielectric-coating or metal medium composite membrane or heat absorption semiconductor material film are the A target, the direct current planar target of metal-coated membrane or infrared waves reflectance coating is the B target, the configuration of its A target and B target preface successively is that 1 to 4 B target/1 to 5 A target/1 to 4 B target/1 to 5 A target/1 to 4 B target/1 are to 5 A targets, perhaps be configured to 1 to 4 B target/1 to 5 A target/1 to 5 A targets, on substrate, deposit interference membrane stack/antireflection layer that the infrared waves reflecting layer be made up of metallic membrane/at least one group is made up of metallic membrane or metal medium composite membrane and deielectric-coating successively, perhaps on substrate, deposit infrared waves reflecting layer/heat absorption semiconductor material film or the metal medium composite material film/antireflection layer formed by metallic membrane successively, produce solar energy heat absorbing functional membrane system.
9. the method for production panel solar as claimed in claim 1 or 2 heat absorption plated film plate, it is characterized in that individual metal substrate length direction greater than 600 millimeters, width greater than 300 millimeters.
10. produce the device of panel solar heat absorption plated film plate, comprise the initial vacuum lock chamber, preceding holding chamber, interference membrane stack/the antireflection layer that has at least the infrared waves reflecting layer that 3 groups of magnetron sputtering targets and depositing successively on substrate of corresponding sputtering chamber be made up of metallic membrane/at least one group to form by metallic membrane or metal medium composite membrane and deielectric-coating, perhaps on substrate, deposit infrared waves reflecting layer/heat absorption semiconductor material film or the metal medium composite material film/antireflection layer formed by metallic membrane successively, on substrate, form the continuous coating chamber of solar absorption functional membrane with this, back holding chamber, the final vacuum lock chamber, magnetron sputtering target and target, power supply, process gas inlet pipe and Controlling System, vacuum-pumping system, substrate delivery mechanism, it is characterized in that substrate in interrupted mode fast by preceding holding chamber and initial vacuum lock chamber be that motor drags the rotation roll shaft by the transporting mechanism of back holding chamber and final vacuum lock chamber fast in interrupted mode equally, the roll shaft surface friction transmits substrate, between atmosphere and initial vacuum lock chamber, between final vacuum lock chamber and the atmosphere vacuum valve is arranged, between initial vacuum lock chamber and the preceding holding chamber, between back holding chamber and the final vacuum lock chamber vacuum valve is arranged, between preceding holding chamber and the continuous coating chamber, between continuous coating chamber and the back holding chamber vacuum valve that allows substrate enter the continuous coating chamber by rhythm of production in batches or withdraw from the continuous coating chamber is arranged.
11. the device of production panel solar heat absorption plated film plate as claimed in claim 10, it is characterized in that between preceding holding chamber and continuous coating chamber, having substrate to become and be the preceding buffer zone that continuously and smoothly's mode of advancing that a slice connects a slice enters the continuous coating chamber by advance sheet mode fast by rhythm of production interrupted, after forming the solar absorption functional membrane on the substrate, have between continuous coating chamber and the back holding chamber to make substrate be continuously and smoothly's mode of advancing that a slice connects a slice to withdraw from the back buffer zone that intermittently goes out sheet mode fast that forms behind the continuous coating chamber by rhythm of production.
12. the device as claim 10 or 11 described production panel solar heat absorption plated film plates is characterized in that the rotating roller between centers laying supporting plate or the holder bar that rotate roll shaft and substrate contact surface being lower than.
13. the device as claim 10 or 11 described production panel solar heat absorption plated film plates is characterized in that the valve place at least 5 functional compartments of film coating apparatus, is provided with the substrate that can rise or descend with the unlatching of valve and transmits transition roll shaft or transition backing plate.
14. device as claim 10 or 11 described production panel solar heat absorption plated film plates, it is characterized in that having dividing plate to form separate chamber separately between continuous coating chamber at least 3 group magnetron sputtering targets and the corresponding sputtering chamber, is furnished with independently pumped vacuum systems, each have independent magnetron sputtering power supply, technology loading line and control unit system, target, gas ducting, vacuum-pumping system are integrated in becomes an independent sputter module on a target pedestal or the chamber cover plate.
15., it is characterized in that having at least between at least 3 group sputtering targets and corresponding sputtering chamber the vacuum suction chamber that slit is arranged that a substrate is able to pass through as isolated chamber as the device of claim 10 or 11 described production panel solars heat absorption plated film plates.
16., it is characterized in that magnetron sputtering target is at least a in direct current planar target, direct current columnar target, midfrequent AC planar target, the midfrequent AC columnar target as the device of claim 10 or 11 described production panel solars heat absorption plated film plates.
17. the device of production panel solar heat absorption plated film plate as claimed in claim 16 is characterized in that magnetron sputtering target is a midfrequent AC cylindricality rotary target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010137316 CN102206807B (en) | 2010-03-31 | 2010-03-31 | Method and device for producing flat panel solar heat-absorption coated board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010137316 CN102206807B (en) | 2010-03-31 | 2010-03-31 | Method and device for producing flat panel solar heat-absorption coated board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102206807A true CN102206807A (en) | 2011-10-05 |
| CN102206807B CN102206807B (en) | 2013-07-03 |
Family
ID=44695857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010137316 Active CN102206807B (en) | 2010-03-31 | 2010-03-31 | Method and device for producing flat panel solar heat-absorption coated board |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102206807B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102367569A (en) * | 2011-11-23 | 2012-03-07 | 林嘉宏 | Vacuum magnetic controlled sputtering film plating apparatus with low roller sputtering pollution |
| CN102776482A (en) * | 2012-07-03 | 2012-11-14 | 浦江县名亿真空镀膜厂 | Lamp cup magnetic control sputter coating and continuous production process of surface vacuum hardening protection layer |
| CN109252144A (en) * | 2018-12-01 | 2019-01-22 | 安徽方兴光电新材料科技有限公司 | A kind of flexible winding filming equipment miscellaneous gas cleaning isolating device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060024428A1 (en) * | 2004-08-02 | 2006-02-02 | Jeong Cho | Method and apparatus for manufacturing laminate for flexible printed circuit board having metal plated layer using vacuum deposition |
| CN200996042Y (en) * | 2006-11-21 | 2007-12-26 | 甘国工 | Magnetic-controlled sputtering winding film coater |
| CN201121207Y (en) * | 2007-10-31 | 2008-09-24 | 魏海波 | Apparatus for plating solar complete plate heat collector chip with large area |
| CN201648513U (en) * | 2010-03-31 | 2010-11-24 | 甘国工 | Device for producing a flat-plate solar-energy heat-absorption film-coating plate |
-
2010
- 2010-03-31 CN CN 201010137316 patent/CN102206807B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060024428A1 (en) * | 2004-08-02 | 2006-02-02 | Jeong Cho | Method and apparatus for manufacturing laminate for flexible printed circuit board having metal plated layer using vacuum deposition |
| CN200996042Y (en) * | 2006-11-21 | 2007-12-26 | 甘国工 | Magnetic-controlled sputtering winding film coater |
| CN201121207Y (en) * | 2007-10-31 | 2008-09-24 | 魏海波 | Apparatus for plating solar complete plate heat collector chip with large area |
| CN201648513U (en) * | 2010-03-31 | 2010-11-24 | 甘国工 | Device for producing a flat-plate solar-energy heat-absorption film-coating plate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102367569A (en) * | 2011-11-23 | 2012-03-07 | 林嘉宏 | Vacuum magnetic controlled sputtering film plating apparatus with low roller sputtering pollution |
| CN102776482A (en) * | 2012-07-03 | 2012-11-14 | 浦江县名亿真空镀膜厂 | Lamp cup magnetic control sputter coating and continuous production process of surface vacuum hardening protection layer |
| CN109252144A (en) * | 2018-12-01 | 2019-01-22 | 安徽方兴光电新材料科技有限公司 | A kind of flexible winding filming equipment miscellaneous gas cleaning isolating device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102206807B (en) | 2013-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102206806B (en) | Flat solar heat absorption coated plate production method and vertical coating apparatus | |
| CN201648514U (en) | Vertical film coating device for producing flat-plate solar heat absorbing coated plates | |
| JP5908513B2 (en) | Apparatus and method for manufacturing thin film solar cells | |
| CN102220559B (en) | Production method and production device of flat solar-energy heat-absorbing film-coated plate | |
| CN201648516U (en) | Production device for flat-plate solar heat absorption film-coating plate | |
| CN101086059B (en) | Solar energy heat-collecting pipe vacuum magnetic-control sputtering continuous plating line system | |
| US9892889B2 (en) | Roll-to-roll hybrid plasma modular coating system | |
| CN101958371B (en) | Device for manufacturing copper indium gallium selenium (CIGS) thin-film solar cells | |
| CN102206807B (en) | Method and device for producing flat panel solar heat-absorption coated board | |
| CN202090053U (en) | Reel-to-reel continuous coating film production line for solar spectrum selective-absorbing coatings | |
| CN102220565B (en) | Chemical vapor deposition equipment used for studying light trapping structure of silicon thin-film cell | |
| CN100532997C (en) | Selective solar energy absorbing coating and method for making same | |
| CN106319473A (en) | CIGS solar cell film production line | |
| CN107794510A (en) | Fexible film vertical vacuum coating film production line | |
| CN100343413C (en) | Solar energy selective absorptive coating and its preparing method | |
| CN216891172U (en) | Roll-to-roll equipment for electron beam evaporation double-sided coating | |
| CN201648513U (en) | Device for producing a flat-plate solar-energy heat-absorption film-coating plate | |
| CN104891825A (en) | Scratch-resistant temperable single-silver low-radiation coated glass | |
| CN201158699Y (en) | Coiling film-plating machine | |
| CN206022406U (en) | CIGS solar battery thin film production lines | |
| CN107623052A (en) | A kind of solar battery sheet passivation Al2O3Coating system and method | |
| CN105006501A (en) | Preparation method and preparation device for CIGS-based thin-film solar cell | |
| CN105671508A (en) | Roll-to-roll magnetron sputtering vacuum coating device | |
| CN205688003U (en) | A kind of volume to volume magnetic control sputtering vacuum coating device | |
| CN101851070B (en) | Preparation method of high-selectivity absorbing coating of solar vacuum tube |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: DONGTAI (CHENGDU) INDUSTRY CO., LTD. Free format text: FORMER OWNER: GAN GUOGONG Effective date: 20130929 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20130929 Address after: 610100, No. 103, Xingguang Road, Longquanyi economic and Technological Development Zone, Chengdu, Sichuan Patentee after: Dongtai (Chengdu) Industry Co., Ltd. Address before: 610100 Dong Tai (Chengdu) Industry Co., Ltd., No. 103, Xingguang Road, Longquanyi economic and Technological Development Zone, Chengdu, Sichuan Patentee before: Gan Guogong |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160818 Address after: 610000 Sichuan Chengdu Shuangliu County Jiujiang town ten thousand communities Patentee after: SICHUAN GOLDSTONE ORIENT NEW MATERIAL EQUIPMENT CO., LTD. Address before: 610100, No. 103, Xingguang Road, Longquanyi economic and Technological Development Zone, Chengdu, Sichuan Patentee before: Dongtai (Chengdu) Industry Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190808 Address after: 610200 Six Stages of Industrial Centralized Development Zone of Southwest Airport Economic Development Zone, Shuangliu District, Chengdu City, Sichuan Province Patentee after: Chengdu Jinshi New Material Technology Co., Ltd. Address before: 610000 Sichuan Chengdu Shuangliu County Jiujiang town ten thousand communities Patentee before: SICHUAN GOLDSTONE ORIENT NEW MATERIAL EQUIPMENT CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 610200 Six Stages of Industrial Centralized Development Zone of Southwest Airport Economic Development Zone, Shuangliu District, Chengdu City, Sichuan Province Patentee after: Sichuan Jinshi Oriental New Material Technology Co., Ltd Address before: 610200 Six Stages of Industrial Centralized Development Zone of Southwest Airport Economic Development Zone, Shuangliu District, Chengdu City, Sichuan Province Patentee before: Chengdu Jinshi New Material Technology Co., Ltd. |