CN102201358B - Device and method for characterizing substrate surface property - Google Patents
Device and method for characterizing substrate surface property Download PDFInfo
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- CN102201358B CN102201358B CN201110123914.3A CN201110123914A CN102201358B CN 102201358 B CN102201358 B CN 102201358B CN 201110123914 A CN201110123914 A CN 201110123914A CN 102201358 B CN102201358 B CN 102201358B
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- platen
- substrate
- backboard
- fixture
- substrate surface
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a device for characterizing a substrate surface property, which is used for clamping a substrate to selectively block the surface thereof so as to selectively corrode the surface of the substrate. The device comprises a plurality of pressing plates, a back plate, a first clamp and a connecting piece, wherein each pressing plate is provided with a plane facing the corroded surface of the clamped substrate; the back plate is arranged opposite to the pressing plates and is used for matching the planes of the pressing plates so as to clamp the substrate; the first clamp is connected with the pressing plates and the back plate and is used for applying opposite pressure to the pressing plates and the back plate so as to clamp the substrate between the pressing plates and the back plate; and the connecting piece is used for connecting the pressing plates and connecting the pressing plates and the clamp.
Description
Technical field
The invention relates to a kind of material characterizing method, particularly a kind of device of characterizing substrate surface property and method.
Background technology
In order to characterize some character of Semiconductor substrate, the device layer of Semiconductor substrate need to be divided into several separate regions; Or in order to characterize the distribution situation of some physical parameter at semiconductor substrate surface, as doping, oxidated layer thickness etc., also need the surface of Semiconductor substrate to be divided into some regions independent of each other.And traditional method is to adopt photoetching and lithographic technique, obtain discrete test island.
The shortcoming of prior art is, cycle of photoetching and etching technics is long, cost is high, is not suitable for Semiconductor substrate to implement to characterize online frequently.
Summary of the invention
Technical problem to be solved by this invention is, a kind of device and method of levying substrate surface character is provided, and can reduce sign cost.
In order to address the above problem, the invention provides a kind of device of characterizing substrate surface property, block so that selectivity is carried out in its surface for clamp substrate, to substrate surface is carried out to selective corrosion, comprise: multiple platens, described platen has one separately towards the surperficial plane of being corroded of the substrate being held; One backboard, described backboard and platen are oppositely arranged, and match with clamp substrate for the plane of same platen; The first fixture, described the first fixture is connected with platen and backboard, for apply the pressure of subtend on platen and backboard, thereby substrate is clamped between platen and backboard; Connector, described connector is used for connecting platen and platen, and platen and fixture.
As optional technical scheme, further comprise the second fixture, described the second fixture is also connected with platen and backboard, and is oppositely arranged with the first fixture, balanced to ensure the pressure distribution between platen and backboard.
As optional technical scheme, the material of described platen, backboard and connector is polytetrafluoroethylene.
Adopt a method for said apparatus characterizing substrate surface property, comprise the steps: a substrate to be positioned between backboard and platen; Chucking operation is applying the pressure of subtend on platen and backboard, thereby substrate is clamped between platen and backboard; Be placed in corrosive liquid and carry out selective corrosion being clamped in substrate between platen and backboard.
The invention has the advantages that, by adopting the part that fixture and platen need to retain substrate surface to compress, carry out again afterwards selective corrosion.Conventionally this method characterizes the method for substrate character and do not require that whether the border of test island is neat, therefore can reduce the process costs of characterizing method.
Brief description of the drawings
Accompanying drawing 1 is to shown in accompanying drawing 3 being the structural representation installing described in the specific embodiment of the invention.
Shown in accompanying drawing 4, be that the specific embodiment of the invention adopts the implementation step schematic diagram of accompanying drawing 1 to the method for accompanying drawing 3 shown device corrosion substrates.
Embodiment
Next introduce in detail by reference to the accompanying drawings the device of a kind of characterizing substrate surface property of the present invention and the embodiment of method.
Simultaneously with reference to accompanying drawing 1, accompanying drawing 2 with shown in accompanying drawing 3, be the structural representation installing described in this embodiment, comprise multiple platens 10, backboard 11, the first fixture 121, the second fixture 122, connector 13 and the substrate 19 being held.Accompanying drawing 1 is the front view of described device, and accompanying drawing 2 is accompanying drawing 1 profiles along AA direction, and accompanying drawing 3 is accompanying drawing 1 profiles along BB direction.This embodiment has provided five platens 10, the platen of other numbers can also be set according to actual conditions in other execution mode, and according to the connector 13 of the number of platen 10 and distribution shape reasonable in design, each platen is linked together, and be connected to each fixture such as the first fixture 121 and the second fixture 122.
Fixture in this embodiment has comprised the first fixture 121 and the second fixture 122 that are oppositely arranged.Described the first fixture 121 is all connected with platen 10 and backboard 11 with the second fixture 122, for apply the pressure of subtend on platen 10 and backboard 11, thereby substrate 19 is clamped between platen 10 and backboard 11.Be oppositely arranged two fixtures and can further ensure that the pressure distribution between platen 10 and backboard 11 is balanced.More fixture also can be set in other execution mode, each fixture preferably in equally distributed mode around wafer.
In the embodiment of the first single fixture 121 of employing, the material of at least described platen 10, backboard 11 and connector 19 should be resistant material, for example polytetrafluoroethylene, and this material can tolerate the corrosion of most corrosive liquids.And in the execution mode of two fixtures that are oppositely arranged of employing, the material of at least one fixture should be also the corrosion-resistant materials such as polytetrafluoroethylene.
Shown in accompanying drawing 4, be the implementation step schematic diagram that adopts the method for said apparatus corrosion substrate, at least should comprise the steps: step S40, a substrate is positioned between backboard and platen; Step S41, chucking operation is applying the pressure of subtend on platen and backboard, thereby substrate is clamped between platen and backboard; Step S42, is placed in corrosive liquid and carries out selective corrosion being clamped in substrate between platen and backboard.
In step S41, should ensure the abundant contact between platen and substrate surface, so that corrosive liquid is unlikely to enter into the part between platen and substrate, and the pressure of controlling fixture is unlikely to substrate to crush.
In step S42, in the time that described substrate is the Semiconductor substrate with insulating buried layer, this step can be corroded to insulating buried layer and be stopped, and independently tests island thereby form several on insulating buried layer surface, between each test island, insulate each other.Therefore this method is particularly useful for characterizing the Semiconductor substrate with insulating buried layer.
In sum; although the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention; persond having ordinary knowledge in the technical field of the present invention; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, the scope of the claims person of defining that therefore protection scope of the present invention ought be applied for depending on claims is as the criterion.
Claims (4)
1. a device for characterizing substrate surface property, blocks so that selectivity is carried out in its surface for clamp substrate, to substrate surface is carried out to selective corrosion, it is characterized in that, comprising:
Multiple platens, described platen has one separately towards the surperficial plane of being corroded of the substrate being held;
One backboard, described backboard and platen are oppositely arranged, and match with clamp substrate for the plane of same platen;
The first fixture, described the first fixture is connected with platen and backboard, for apply the pressure of subtend on platen and backboard, thereby substrate is clamped between platen and backboard;
Connector, described connector is used for connecting platen and platen, and platen and fixture; Wherein, the material of described platen, backboard and connector is polytetrafluoroethylene.
2. the device of characterizing substrate surface property according to claim 1, it is characterized in that, further comprise the second fixture, described the second fixture is also connected with platen and backboard, and be oppositely arranged with the first fixture, balanced to ensure the pressure distribution between platen and backboard.
3. the device of characterizing substrate surface property according to claim 1, is characterized in that, described substrate is the Semiconductor substrate with insulating buried layer.
4. a method that adopts device characterization substrate surface character described in claim 1, is characterized in that, comprises the steps:
One substrate is positioned between backboard and platen;
Chucking operation applies the pressure of subtend on platen and backboard, thereby substrate is clamped between platen and backboard;
Be placed in corrosive liquid and carry out selective corrosion being clamped in substrate between platen and backboard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110123914.3A CN102201358B (en) | 2011-05-13 | 2011-05-13 | Device and method for characterizing substrate surface property |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110123914.3A CN102201358B (en) | 2011-05-13 | 2011-05-13 | Device and method for characterizing substrate surface property |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102201358A CN102201358A (en) | 2011-09-28 |
| CN102201358B true CN102201358B (en) | 2014-06-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110123914.3A Active CN102201358B (en) | 2011-05-13 | 2011-05-13 | Device and method for characterizing substrate surface property |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9546943B1 (en) * | 2015-03-21 | 2017-01-17 | J.A. Woollam Co., Inc | System and method for investigating change in optical properties of a porous effective substrate surface as a function of a sequence of solvent partial pressures at atmospheric pressure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2258656Y (en) * | 1996-09-20 | 1997-07-30 | 西安交通大学 | Clamping holder for single crystal silicon wafer anisotropic etching |
| US6008134A (en) * | 1997-02-05 | 1999-12-28 | Motorola, Inc. | Process for forming semiconductor device using beveled clamp fingers in an etching system |
| US6106664A (en) * | 1998-07-30 | 2000-08-22 | Promos Technologies, Inc. | Clamp for affixing a wafer in an etching chamber |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080063781A (en) * | 2005-10-28 | 2008-07-07 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | A method of manufacturing a structure |
| JP5407276B2 (en) * | 2008-10-27 | 2014-02-05 | 大日本印刷株式会社 | Manufacturing method of semiconductor device |
| CN101403118B (en) * | 2008-11-13 | 2010-06-16 | 中国电子科技集团公司第二十四研究所 | Silicon slice corrosion single-face protection clamper |
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- 2011-05-13 CN CN201110123914.3A patent/CN102201358B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2258656Y (en) * | 1996-09-20 | 1997-07-30 | 西安交通大学 | Clamping holder for single crystal silicon wafer anisotropic etching |
| US6008134A (en) * | 1997-02-05 | 1999-12-28 | Motorola, Inc. | Process for forming semiconductor device using beveled clamp fingers in an etching system |
| US6106664A (en) * | 1998-07-30 | 2000-08-22 | Promos Technologies, Inc. | Clamp for affixing a wafer in an etching chamber |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2010-103432A 2010.05.06 |
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| CN102201358A (en) | 2011-09-28 |
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