CN102194917A - Method for preparing CuInGaSe sizing agent in non-vacuum manner - Google Patents
Method for preparing CuInGaSe sizing agent in non-vacuum manner Download PDFInfo
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- CN102194917A CN102194917A CN2010101167526A CN201010116752A CN102194917A CN 102194917 A CN102194917 A CN 102194917A CN 2010101167526 A CN2010101167526 A CN 2010101167526A CN 201010116752 A CN201010116752 A CN 201010116752A CN 102194917 A CN102194917 A CN 102194917A
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Abstract
The invention discloses a method for preparing a CuInGaSe sizing agent in a non-vacuum manner, comprising the following steps of: mixing two-component powder, three-component powder or four-component powder containing group IB elements, group IIIA elements and group VIA elements and having different average grain diameters to form original mixed powder; adding extra group VIA element powder and mixing to form final mixed powder; and adding a solvent and then stirring to form the required sizing agent, wherein the group IB elements comprise Cu, the group IIIA elements comprise In, or Ga or an In and Ga mixed material, the group VIA elements comprises Se, or S or an Se and S mixed material, and the added extra VIA element powder comprises Se, or S or an Se and S mixed material. By the adoption of the method, gaps in an absorption layer can be reduced by selecting powder with the first average grain diameter and powder with the second average grain diameter, wherein the second average grain diameter is less than 30 percentage of the first average grain diameter; and the compactness is increased, and the light absorption characteristic and the photoelectric conversion efficiency are improved.
Description
Technical field
The present invention relates to a kind of copper indium gallium selenide sizing agent concocting method, relate in particular to a kind of method of under non-vacuum environment, making copper indium gallium selenide sizing agent.
Background technology
The new line of and environmental consciousness surging with international oil price, green energy resource has become the new forms of energy main flow, and solar cell is because of taking from the stable radiant energy of the sun, the source can be inexhausted, therefore more various countries pay attention to, wherein the conversion efficiency with Copper Indium Gallium Selenide (CIGS) solar cell is the highest again, can module be about 14% up to 20% such as element cell, therefore comes into one's own especially.
CuInGaSe absorbed layer is the primary structure of CIGS solar cell, in order to carry out light absorption and opto-electronic conversion, and the manufacture method of prior art is to use vacuum process, therefore in recent years, the exploitation of antivacuum processing procedure all the more comes into one's own, wherein the most frequently used antivacuum processing procedure is to use slurry or the ink (Ink) that comprises copper, indium, gallium, selenium or comprise copper, indium, gallium, selenium, sulphur, after being applied on the molybdenum layer, heating, drying and form required CuInGaSe absorbed layer or Copper Indium Gallium Selenide (sulphur) absorbed layer again.
Yet the shortcoming of above-mentioned prior art is, can follow on molybdenum layer for making absorbed layer, slurry or ink must add interfacial agent and solid, and interfacial agent and solid may remain in the absorbed layer, make that the phosphorus content and the oxygen content of absorbed layer are higher, have a strong impact on the optical absorption characteristics and the photoelectric conversion efficiency of absorbed layer.
Another shortcoming of above-mentioned prior art is, the allotment slurry is to use has two compositions or three compositions or the four composition powder that single average grain diameter contains IB, IIIA and VIA family element, can cause the densification inadequately of the accumulation between the different powder in the light absorbing zone, cause the space of light absorbing zone excessive, and influence optical absorption characteristics and photoelectric conversion efficiency.Therefore, need a kind of two compositions or three compositions or four composition powder that contain IB, IIIA and VIA family element in the different average grain diameters of antivacuum use down, and need not add interfacial agent and solid and can reduce the slurry manufacture method in light absorbing zone space, to solve above-mentioned prior art problems.
Summary of the invention
The present invention is directed to the shortcoming of prior art, a kind of method of anti-vacuum manufacture copper indium gallium selenide sizing agent is provided.
The method of anti-vacuum manufacture copper indium gallium selenide sizing agent of the present invention, comprise and mix the different average grain diameters of tool and contain IB, two compositions of IIIA and VIA family element or three compositions or four composition powder, form the original mixed powder, additionally add VIA family element powders again and mix, to form last mixed-powder, then add solvent and stir, to form required copper indium gallium selenide sizing agent or Copper Indium Gallium Selenide (sulphur) slurry, wherein IB family element comprises copper, IIIA family element comprises indium or gallium or indium gallium composite material, and VIA family element comprises selenium or sulphur or selenium sulphur composite material, and the extra VIA family element powders that adds comprises selenium or sulphur or selenium sulphur composite material, the powder of the powder of optional apparatus first average grain diameter and tool second average grain diameter, and second average grain diameter is below 30% of first average grain diameter, to reduce the space of absorbed layer, increase density, improve optical absorption characteristics and photoelectric conversion efficiency.
Description of drawings
Fig. 1 is the schematic diagram of the method for anti-vacuum manufacture copper indium gallium selenide sizing agent of the present invention.
Embodiment
Those skilled in the art below cooperate Figure of description that embodiments of the present invention are done more detailed description, so that can implement after studying this specification carefully according to this.
Method of the present invention is not need down interfacial agent and solid and make copper indium gallium selenide sizing agent or Copper Indium Gallium Selenide (sulphur) slurry antivacuum, can be coated on the molybdenum layer and forms the absorbed layer of Copper Indium Gallium Selenide solar cell, in order to carry out light absorption and opto-electronic conversion.
Consult Fig. 1, be the schematic diagram of the method for anti-vacuum manufacture copper indium gallium selenide sizing agent.As shown in Figure 1, the method of anti-vacuum manufacture copper indium gallium selenide sizing agent of the present invention is begun by step S10, at first in step S10, according to formula rate, mix the different average grain diameter of tool and contain IB, IIIA and two compositions of VIA family element or three compositions or four composition powder, to form the original mixed powder.
The ratio of the IB that above-mentioned formula rate comprised, IIIA and VIA family element, be to be expressed as 1.0: 1.0: 2.0 with molar ratio, wherein IB family element comprises copper, and IIIA family element can be indium or gallium or indium gallium composite material, in addition, VIA family element can be selenium or sulphur or selenium sulphur composite material.Therefore, the original mixed powder can comprise copper, indium, gallium and selenium, maybe can comprise copper, indium, gallium, selenium and sulphur.The average grain diameter of the powder of the above-mentioned IB of comprising, IIIA and VIA family element comprises first average grain diameter and second average grain diameter at least, and second average grain diameter is below 30% of first average grain diameter, uses the space that reduces between the powder.For example, when choosing first average grain diameter and being 100nm, then second average grain diameter is below the 30nm.
Then in step S20, with a VIA family element ratio, add extra VIA family element powders again to the original mixed powder, make VIA family element ratio in the original mixed powder be increased to IB family element ratio, and mix to form last mixed-powder greater than 2 times.Extra VIA family element powders can comprise selenium or sulphur or selenium sulphur composite material at least one of them.
The ratio of the one VIA family element is that IB, the IIIA that last mixed-powder is comprised and the ratio of VIA family element are expressed as 1.0: 1.0 with molar ratio: X, wherein X is between 2.0 to 4.0.Contain the ratio of powder of VIA family element when too low, to molybdenum layer then effect, and contain the ratio of VIA family element powders when too high, can reduce the adhesion to molybdenum layer on the contrary, the ratio that therefore contains VIA family element powders need be controlled in above-mentioned preferred range.
At last in step S30, the interpolation solvent also stirs, use and form the slurry that contains IB, IIIA and VIA family element, this slurry can comprise copper, indium, gallium and selenium, maybe can comprise copper, indium, gallium, selenium and sulphur, therefore, this slurry can be described as copper indium gallium selenide sizing agent or Copper Indium Gallium Selenide (sulphur) slurry, but general custom is called copper indium gallium selenide sizing agent.The solvent that is added can comprise deionized water, alcohols, ketone or mix described more than two kinds solvent at least one of them.
Characteristics of the present invention are, can be antivacuum following, add extra VIA family element powders to replace interfacial agent and solid, and making copper indium gallium selenide sizing agent or Copper Indium Gallium Selenide (sulphur) slurry, use the adhesion of enhancing to molybdenum layer, and can reduce phosphorus content and oxygen content in the follow-up absorbed layer, keep the optical absorption characteristics and the conversion efficiency of absorbed layer.
Another characteristics of the present invention are, utilize the powder of different average grain diameters, make copper indium gallium selenide sizing agent or Copper Indium Gallium Selenide (sulphur) slurry, form absorbed layer in order to be coated on the molybdenum layer, can reduce the space in the absorbed layer, increase density and improve optical absorption characteristics and photoelectric conversion efficiency.
The above only is in order to explain preferred embodiment of the present invention; be not that attempt is done any pro forma restriction to the present invention according to this; therefore, all have in that identical creation spirit is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (6)
1. the method for an anti-vacuum manufacture copper indium gallium selenide sizing agent, in order to not need down interfacial agent and solid and make one of them of a copper indium gallium selenide sizing agent and a Copper Indium Gallium Selenide (sulphur) slurry antivacuum, this copper indium gallium selenide sizing agent and this Copper Indium Gallium Selenide (sulphur) slurry are in order to be coated on the molybdenum layer and form an absorbed layer, it is characterized in that this method comprises:
At first, according to a formula rate, mix the different average grain diameter of tool and contain IB, IIIA and two compositions of VIA family element or three compositions or four composition powder, to form an original mixed powder, and this IB family element comprises copper, this IIIA family element comprises indium or gallium or indium gallium composite material, and this VIA family element comprises selenium or sulphur or selenium sulphur composite material;
With one the one VIA family element ratio, add extra VIA family element powders again to this original mixed powder, and mix to form a last mixed-powder; And
At last, add solvent to this last mixed-powder and stir, use the slurry that formation contains IB, IIIA and VIA family element, and this slurry is this copper indium gallium selenide sizing agent and this Copper Indium Gallium Selenide (sulphur) slurry one of them.
2. the method for claim 1 is characterized in that, this formula rate comprises that the molar ratio of this IB, IIIA and VIA family element equals 1.0: 1.0: 2.0.
3. the method for claim 1 is characterized in that, this average grain diameter comprises one first average grain diameter and one second average grain diameter at least, and this second average grain diameter is below 30% of this first average grain diameter.
4. the method for claim 1 is characterized in that, a VIA family element ratio comprises that the molar ratio of this IB, IIIA and VIA family element equals 1.0: 1.0: X, wherein X is between 2.0 to 4.0.
5. the method for claim 1 is characterized in that, this extra VIA family element powders comprise selenium or sulphur or selenium sulphur composite material at least one of them.
6. the method for claim 1 is characterized in that, this solvent comprise deionized water, alcohols, ketone or mix described more than two kinds solvent at least one of them.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101167526A CN102194917A (en) | 2010-03-03 | 2010-03-03 | Method for preparing CuInGaSe sizing agent in non-vacuum manner |
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| CN2010101167526A CN102194917A (en) | 2010-03-03 | 2010-03-03 | Method for preparing CuInGaSe sizing agent in non-vacuum manner |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280486A (en) * | 2013-05-06 | 2013-09-04 | 深圳市亚太兴实业有限公司 | Preparation method of CuInGaSe film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820026A (en) * | 2010-02-11 | 2010-09-01 | 昆山正富机械工业有限公司 | Non-vacuum manufacturing method of CIGS (copper-indium-gallium-selenium) slurry |
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- 2010-03-03 CN CN2010101167526A patent/CN102194917A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820026A (en) * | 2010-02-11 | 2010-09-01 | 昆山正富机械工业有限公司 | Non-vacuum manufacturing method of CIGS (copper-indium-gallium-selenium) slurry |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103280486A (en) * | 2013-05-06 | 2013-09-04 | 深圳市亚太兴实业有限公司 | Preparation method of CuInGaSe film |
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Application publication date: 20110921 |