CN102184931A - Image sensor - Google Patents
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- CN102184931A CN102184931A CN2011100986568A CN201110098656A CN102184931A CN 102184931 A CN102184931 A CN 102184931A CN 2011100986568 A CN2011100986568 A CN 2011100986568A CN 201110098656 A CN201110098656 A CN 201110098656A CN 102184931 A CN102184931 A CN 102184931A
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Abstract
The invention discloses an image sensor. The image sensor comprises a substrate and a pixel array. The pixel array comprises a plurality of pixels which are arrayed in rows and lines, wherein each pixel comprises a photosensitive diode and a transmission pipe. For the pixels with the same color channel, the arrangement way, corresponding to the corresponding photosensitive diode, of the transmission tube at least comprises a first arrangement way and a second arrangement way which are axially symmetrical; and the symmetrical axis of the first arrangement way and the second arrangement way is along the direction of the pixel row or the pixel line. The imaging quality of the image sensor can be improved.
Description
Technical field
The present invention relates to image device, relate in particular to imageing sensor.
Background technology
Imageing sensor belongs to the photoelectric cell class in the opto-electronics, along with developing rapidly of digital technology, semiconductor fabrication and network, existing market and industry all are faced with the arrival in the video signal of crossing over each platform, audio-visual, big integration epoch of communication, and cropping the beautiful scenery of following human daily life.With its application in daily life, to belong to the digital camera product undoubtedly, its development speed can describe with making rapid progress.Short several years, digital camera developed into 400,5,000,000 pixels even higher just by the hundreds of thousands pixel.Not only in the American-European countries of prosperity, digital camera has occupied very big market, be exactly in developing China, the market of digital camera is also increasing with surprising rapidity, therefore, its key components and parts---image sensor products just becomes the object that current and following industry is paid close attention to, and is attracting numerous manufacturers to drop into.Distinguish with product category, image sensor products mainly is divided into CCD (charge-coupled image sensor), cmos sensor (complementary metal oxide imageing sensor).
The dot structure of existing C CD imageing sensor and cmos sensor mainly is divided into two kinds, is respectively 3T structure and 4T structure.Each pixel of the pixel of 3T structure comprises that a reset transistor, a capable gate tube and a source follow pipe.The pixel of 4T structure has increased a transfer tube than the pixel of 3T structure.For the 4T dot structure, each pixel always needs a transfer tube, and transfer tube makes the controllability of pixel better, can reduce thermal noise and dark current effectively.
Fig. 1 is the image sensor pixel array arrangement mode schematic diagram of existing 4T structure-pixel, with reference to figure 1, pel array comprises a plurality of pixels 10, described a plurality of pixel 10 is ranks arranges, and each pixel 10 comprises that light sensitive diode 11, transfer tube 12, reset transistor 13, source follow between pipe 14 and row gate tube (not shown), light sensitive diode 11 and the transfer tube 12 and have floating diffusion region FD.The pixel of the 4T structure of representing among Fig. 1 is not illustrated the gate tube of going on a journey.Fig. 2 is the circuit diagram of 4T structure-pixel, with reference to figure 2, the operation principle of 4T structure-pixel is: transfer tube 12 is used for the charge transfer of light sensitive diode 11 is arrived floating diffusion region FD, reset transistor 13 is used for floating diffusion region FD is resetted, and the source is followed pipe 14 and is used for the signal of telecommunication of floating diffusion region FD is amplified output.Its course of work is: reset transistor 13 conductings, FD is changed to high potential with floating diffusion region, turn-offs reset transistor 13 then, opens transfer tube 12, light sensitive diode 11 is changed to high potential, to finish the reset operation to light sensitive diode 11.Perhaps, can open reset transistor 13 and transfer tube 12 simultaneously, turn-off them again, also can finish the operation that resets.Be the process that light sensitive diode 11 is collected light induced electron then, after a period of time, open capable gate tube 15, open, turn-off reset transistor, FD resets with floating diffusion region, and follows pipe 14 by the source and read reset level.Open, turn-off transfer tube 12 then, the light induced electron in the light sensitive diode 11 is transferred to floating diffusion region FD, read this signal level again.The difference of reset level and signal level has been exactly the signal of output column out output.
With reference to figure 1, in the prior art, all pixels 10 are arranged in ranks by same way as, and the light sensitive diode 11 of all pixels 10 is arranged in ranks by identical mode, and transfer tube 12 is also all identical with respect to the position and the layout of the light sensitive diode 11 of correspondence.With pixel column and pixel column (just x axle shown in Fig. 1 and y axle) pel array is divided into A, B, four zones of C, D by pel array center o.The image that the imageing sensor of this of prior art kind of arrangement mode pel array generates has different performances in A, B, four zones of C, D, and usually the brightness at four angles and color can be variant, cause picture quality low.
Summary of the invention
The problem that the present invention solves is that the image that the imageing sensor of prior art generates has different performances in A, B, four zones of C, D, and the brightness at four angles and color can be variant, and picture quality is low.
For addressing the above problem, the invention provides a kind of imageing sensor, comprising:
Substrate;
Be positioned at described suprabasil pel array, described pel array comprises a plurality of pixels, and described a plurality of pixels are ranks arranges, and each pixel comprises light sensitive diode and transfer tube;
Pixel for same Color Channel, transfer tube comprises first arrangement mode and second arrangement mode at least with respect to the arrangement mode of the light sensitive diode of correspondence, described first arrangement mode and described second arrangement mode axisymmetricly, the symmetry axis of described first arrangement mode and described second arrangement mode is along the direction of pixel column or the direction of pixel column.
Optionally, pixel for same Color Channel, transfer tube also comprises the 3rd arrangement mode with respect to the arrangement mode of the light sensitive diode of correspondence, described first arrangement mode and described the 3rd arrangement mode axisymmetricly, and the symmetry axis of described first arrangement mode and described second arrangement mode is vertical with the symmetry axis of described the 3rd arrangement mode with described first arrangement mode.
Optionally, pixel for same Color Channel, transfer tube also comprises the 4th arrangement mode with respect to the arrangement mode of the light sensitive diode of correspondence, described second arrangement mode and described the 4th arrangement mode axisymmetricly, and the symmetry axis of described second arrangement mode and described the 4th arrangement mode is vertical with the symmetry axis of described second arrangement mode with described first arrangement mode.
Optionally, pixel for same Color Channel, transfer tube also comprises the 3rd arrangement mode and the 4th arrangement mode with respect to the arrangement mode of the light sensitive diode of correspondence, described the 3rd arrangement mode and described the 4th arrangement mode axisymmetricly, and the symmetry axis of described first arrangement mode and second arrangement mode is identical with the symmetry axis of the 3rd arrangement mode and the 4th arrangement mode;
Described first arrangement mode also with described the 3rd arrangement mode axisymmetricly, described second arrangement mode also with described the 4th arrangement mode axisymmetricly, the symmetry axis of first arrangement mode and the 3rd arrangement mode is identical with the 4th arrangement mode symmetry axis with second arrangement mode, and the symmetry axis of described second arrangement mode and described the 4th arrangement mode is vertical with the symmetry axis of described second arrangement mode with described first arrangement mode.
Optionally, described pel array is the Baeyer pel array, and described a plurality of pixels are three kinds of color pixel, is respectively R color pixel, G color pixel, B color pixel, and described G color pixel comprises the pixel of G1 passage and the pixel of G2 passage.
Optionally, for the pixel of same Color Channel, the arrangement mode of light sensitive diode also axisymmetricly, its axisymmetric condition is identical with respect to the axisymmetric condition of corresponding light sensitive diode arrangement mode with transfer tube.
Optionally, comprise that also the source follows pipe and reset transistor, for the pixel of same Color Channel, pipe and the arrangement mode of reset transistor are followed also axisymmetricly in the source, and its axisymmetric condition is identical with respect to the axisymmetric condition of corresponding light sensitive diode arrangement mode with transfer tube.
Optionally, comprise that also the source follows pipe, reset transistor and row gate tube, for the pixel of same Color Channel, the arrangement mode that pipe, reset transistor and row gate tube are followed in the source also axisymmetricly, its axisymmetric condition is identical with respect to the axisymmetric condition of corresponding light sensitive diode arrangement mode with transfer tube.
Optionally, described imageing sensor is charge-coupled image sensor or complementary metal oxide imageing sensor.
Compared with prior art, technical solution of the present invention has the following advantages:
Technical scheme of the present invention, pixel for same Color Channel, transfer tube comprises first arrangement mode and second arrangement mode at least with respect to the arrangement mode of the light sensitive diode of correspondence, described first arrangement mode and described second arrangement mode are axisymmetricly, like this, can reduce the brightness and the color distortion of the pixel that is in axisymmetric position, improve picture quality.
In specific embodiment, pixel for same Color Channel, transfer tube comprises first arrangement mode with respect to the arrangement mode of the light sensitive diode of correspondence, second arrangement mode, the 3rd arrangement mode and the 4th arrangement mode, first arrangement mode and second arrangement mode are axisymmetricly, first arrangement mode also with the 3rd arrangement mode axisymmetricly, described second arrangement mode also with described the 4th arrangement mode axisymmetricly, the 3rd arrangement mode and the 4th arrangement mode are axisymmetricly, the symmetry axis of described first arrangement mode and second arrangement mode is identical with the symmetry axis of the 3rd arrangement mode and the 4th arrangement mode, the symmetry axis of first arrangement mode and the 3rd arrangement mode is identical with the 4th arrangement mode symmetry axis with second arrangement mode, the symmetry axis of first arrangement mode and the 3rd arrangement mode, second arrangement mode and the 4th arrangement mode symmetry axis are divided into four zones with pel array.Because for a kind of color pixel, in four zones, therefore the pixel transfer tube that is in axisymmetric position can improve brightness and the color distortion that is in axisymmetric position in four zones with respect to the arrangement mode of the light sensitive diode of correspondence also axisymmetricly, improves picture quality.In specific embodiment, if in four zones, all pixel transfer tubes that are in axisymmetric position with respect to the arrangement mode of the light sensitive diode of correspondence also axisymmetricly, the image that imageing sensor generates in four zones has essentially identical performance in four zones so, the brightness at four angles and the difference of color also can reduce, and picture quality is well improved.
Description of drawings
Fig. 1 is the image sensor pixel array arrangement mode schematic diagram of existing 4T structure-pixel;
Fig. 2 is the circuit diagram of 4T structure-pixel;
Fig. 3 is the schematic layout pattern of the R pel array of the present invention's first specific embodiment;
Fig. 4 is the schematic layout pattern of Baeyer pel array;
Fig. 5 is the transfer tube of R pixel in the R pel array of the present invention's second specific embodiment arrangement mode schematic diagram of corresponding light sensitive diode relatively;
Fig. 6 is the transfer tube of R pixel in the R pel array of the present invention's the 3rd specific embodiment arrangement mode schematic diagram of corresponding light sensitive diode relatively;
Fig. 7 is the transfer tube of R pixel in the R pel array of the present invention's the 4th specific embodiment arrangement mode schematic diagram of corresponding light sensitive diode relatively.
Embodiment
With reference to figure 1, in the prior art, the image of generation has different performances in A, B, four zones of C, D, and usually the brightness at four angles and color can be variant, cause picture quality low.The inventor is through conscientiously research, discovery is in the imageing sensor imaging process, because light sensitive diode 11 some and transfer tube 12 are overlapping, transfer tube 12 can influence the amount that light sensitive diode 11 receives light with respect to the arrangement mode (comprising position and layout) of light sensitive diode, when therefore light is injected pel array, A, B, C, light input variable about x axle and y axisymmetric position in four zones of D is equal substantially, but because A, B, C, transfer tube 12 is asymmetric about x axle and y axle with respect to the arrangement mode of the light sensitive diode 11 of correspondence in four zones of D, though this has just caused the light amount injected in the position of symmetry basic identical, but the light amount (some is transmitted pipe and blocks) inequality that light sensitive diode 11 receives, and the doping shape in the silicon of light sensitive diode 11 is also asymmetric, cause the shape of electric field asymmetric, so the ability of collection light induced electron is also just asymmetric.This image that has just caused generating has different performances in A, B, four zones of C, D, and usually the brightness at four angles and color can be variant, cause picture quality low.
The imageing sensor of the technical program comprises: substrate; Be positioned at described suprabasil pel array, described pel array comprises a plurality of pixels, and described a plurality of pixels are ranks arranges, and each pixel comprises light sensitive diode and transfer tube, and described a plurality of pixels are at least a kind of color pixel; Pixel for same Color Channel, transfer tube comprises first arrangement mode and second arrangement mode at least with respect to the arrangement mode of the light sensitive diode of correspondence, described first arrangement mode and described second arrangement mode axisymmetricly, the symmetry axis of described first arrangement mode and described second arrangement mode is along the direction of pixel column or the direction of pixel column.Need to prove that arrangement mode refers to position and layout, wherein, transfer tube refers to position and the layout of transfer tube with respect to the light sensitive diode of correspondence with respect to the arrangement mode of the light sensitive diode of correspondence.
In imageing sensor, pel array comprises three kinds of color pixel, is respectively R pixel, G pixel and B pixel, and in the specific embodiment of the invention, the R pixel only comprises the R Color Channel, and the G pixel only comprises the G Color Channel, and the B pixel only comprises the B Color Channel.Also can be for pel array is the Baeyer pel array, the G color pixel comprises G1 Color Channel and G2 Color Channel, and the R pixel only comprises the R Color Channel, and the G pixel only comprises the G Color Channel.For the pixel of same Color Channel, transfer tube comprises first arrangement mode and second arrangement mode at least with respect to the arrangement mode of the light sensitive diode of correspondence.Technical scheme of the present invention, pixel for same Color Channel, transfer tube comprises first arrangement mode and second arrangement mode at least with respect to the arrangement mode of the light sensitive diode of correspondence, described first arrangement mode and described second arrangement mode are axisymmetricly, like this, can reduce the brightness and the color distortion of the pixel that is in axisymmetric position.
Fig. 3 is the schematic layout pattern of the R pel array of the present invention's first specific embodiment, with reference to figure 3, only show the R pel array among Fig. 3, with pixel column and pixel column (just x axle shown in Fig. 3 and y axle) the R pel array is divided into A, B, four zones of C, D by R pel array center o, zone A comprises a plurality of pixel 10a, area B comprises a plurality of pixel 10b, zone C comprises a plurality of pixel 10c, region D comprises a plurality of pixel 10d, described a plurality of pixel 10a, 10b, 10c, 10d are ranks and arrange, and have constituted the R pel array.Pixel 10a comprise light sensitive diode 11a, transfer tube 12a, reset transistor 13a and source follow the pipe 14a, pixel 10b comprise light sensitive diode 11b, transfer tube 12b, reset transistor 13b and source follow the pipe 14b, pixel 10c comprise light sensitive diode 11c, transfer tube 12c, reset transistor 13c and source follow the pipe 14c, pixel 10d comprise light sensitive diode 11d, transfer tube 12d, reset transistor 13d and source follow the pipe 14d.In regional A, transfer tube 12a is first arrangement mode with respect to the light sensitive diode 11a of correspondence, in the area B, transfer tube 12b is second arrangement mode with respect to the light sensitive diode 11b of correspondence, in the zone C, transfer tube 12c is the 3rd arrangement mode with respect to the light sensitive diode 11c of correspondence, and in the region D, transfer tube 12d is the 4th arrangement mode with respect to the light sensitive diode 11d of correspondence.Wherein, first arrangement mode and second arrangement mode are about the y axle axisymmetricly, first arrangement mode and the 3rd arrangement mode are about the x axle axisymmetricly, second arrangement mode and the 4th arrangement mode are about the x axle axisymmetricly, second arrangement mode and the 4th arrangement mode are about the y axle axisymmetricly, the x axle is a pixel row direction, and the y axle is the pixel column direction, and the x axle is perpendicular to the y axle.
In the specific embodiment of the invention, for the pixel of same Color Channel, the arrangement mode of light sensitive diode also axisymmetricly, its axisymmetric condition is identical with respect to the axisymmetric condition of corresponding light sensitive diode arrangement mode with transfer tube.Comprise that also the source follows pipe and reset transistor, for the pixel of same Color Channel, pipe and the arrangement mode of reset transistor are followed also axisymmetricly in the source, and its axisymmetric condition is identical with respect to the axisymmetric condition of corresponding light sensitive diode arrangement mode with transfer tube.Promptly, in this specific embodiment, the pixel 10a in a-quadrant and B zone, the position of pixel 10b and layout claim about the y axle, and then the position of pipe 14a, 14b and layout are followed about the y axial symmetry in light sensitive diode 11a, 11b, reset transistor 13a, 13b and the source in a-quadrant and B zone in the diagram; Position and the layout of pixel 10c, the 10d in C zone and D zone claim about the y axle, and then the position of managing 14c, 14d and layout are followed about the y axial symmetry in light sensitive diode 11c, 11d, reset transistor 13c, 13d and the source in C zone and D zone in the diagram; The pixel 10a in a-quadrant and C zone, the position of pixel 10c and layout claim that about the x axle then pipe 14a, 14c position and layout are followed about the x axial symmetry in light sensitive diode 11a, 11c, reset transistor 13a, 13c and the source in a-quadrant and C zone in the diagram; Position and the layout of pixel 10b, the pixel 10d in B zone and D zone claim about the x axle, and then the position of managing 14b, 14d and layout are followed about the x axial symmetry in light sensitive diode 11b, 11d, reset transistor 13b, 13d and the source in B zone and D zone in the diagram.
For G pel array, B pel array, transfer tube is identical with the arrangement mode of R pel array with respect to the arrangement mode of the light sensitive diode of correspondence, and the arrangement mode of other structures that comprise in the pixel also arrangement mode with the R pel array is identical, just because the center of G pel array, B pel array is different with the center of R pel array, therefore, the symmetry axis of G pel array, B pel array is different with the symmetry axis of R pel array.
In the specific embodiment of the invention, pel array is the Baeyer pel array, Fig. 4 is the schematic layout pattern of Baeyer pel array, with reference to figure 4, in this specific embodiment, because the G pixel comprises two Color Channels, be respectively G1 Color Channel and G2 Color Channel, therefore, for the G pixel, transfer tube is with respect to the arrangement mode of the light sensitive diode of correspondence, need respectively the G picture (being called for short the G1 pixel) of G1 Color Channel and the G pixel (being called for short the G2 pixel) of G2 Color Channel to be estimated the arrangement mode of transfer tube with respect to the light sensitive diode of correspondence, promptly for the G1 pixel, transfer tube comprises with respect to the arrangement mode of the light sensitive diode of correspondence and comprises first arrangement mode and second arrangement mode at least, for the G2 pixel, transfer tube comprises with respect to the arrangement mode of the light sensitive diode of correspondence and comprises first arrangement mode and second arrangement mode at least that the symmetry axis of G1 pel array is different with the symmetry axis of G2 pel array.In A, B, four zones of C, D, the transfer tube of G1 Color Channel and G2 Color Channel is identical with the R pixel with respect to the arrangement mode of the light sensitive diode of correspondence, the transfer tube of B pixel is identical with the R pixel with respect to the arrangement mode of the light sensitive diode of correspondence, and just their symmetry axis can be had any different.With reference to figure 4, for the R pel array, its symmetry axis is xR axle and yR axle, and the intersection point of xR axle and yR axle is the center of R pel array (x axle and a y axle in xR axle and the yR axle difference corresponding diagram 3).For the G1 pel array, its symmetry axis is xG1 axle and yG1 axle, based on the rule of arranging of Baeyer pel array, the xG1 axle of G1 pel array and xR are same symmetry axis, and the yG1 axle is with respect to yR axle translation certain distance (this distance is determined according to the distance between the Baeyer pel array neighbor).For the G2 pel array, its symmetry axis is xG2 axle and yG2 axle, based on the rule of arranging of Baeyer pel array, the xG2 axle is with respect to xR axle translation certain distance (this distance is determined according to the distance between the Baeyer pel array neighbor), and yG2 axle and yR axle are same axle.For the B pel array, its symmetry axis is xB axle and yB axle, and based on the rule of arranging of Baeyer pel array, xB axle and xG2 are same axle, and yB axle and yG1 axle are same axle.
Need to prove, the symmetry axis of each color pixel array of illustrating among Fig. 4 only plays the purpose of the explanation specific embodiment of the invention, make those skilled in the art better understand the specific embodiment of the invention, but the position of the symmetry axis of each color pixel array need enter to determine according to the pel array of actual manufacturing.Need to prove that symmetry axis is not limited to that root axle by array center, the skew certain distance also can about the center.
Above-described Fig. 3 and specific embodiment shown in Figure 4, the pixel of each Color Channel, in A, B, four zones of C, D, first arrangement mode and second arrangement mode are about the y axle axisymmetricly, first arrangement mode and the 3rd arrangement mode are about the x axle axisymmetricly, second arrangement mode and the 4th arrangement mode about the x axle axisymmetricly, second arrangement mode and the 4th arrangement mode are about the y axle axisymmetricly.When light is injected pel array, A, B, C, light input variable about x axle and y axisymmetric position in four zones of D is equal substantially, because four regional A, B, C, among the D transfer tube with respect to the arrangement mode of the light sensitive diode of correspondence about x axle and y axial symmetry, therefore basic identical in the light amount of the position of symmetry light sensitive diode reception, and the doping shape in the silicon of light sensitive diode is also symmetrical, thereby the shape symmetry of electric field, so it is also just symmetrical to collect the ability of light induced electron, the image of Sheng Chenging is at A like this, B, C, there is essentially identical performance in four zones of D, the brightness at four angles and color do not have difference substantially, with respect to prior art, improved the picture quality height.
Above specific embodiment is the preferred embodiments of the present invention, but the invention is not restricted to above-described specific embodiment, technical scheme of the present invention, as long as satisfy pixel for same Color Channel, transfer tube comprises first arrangement mode and second arrangement mode at least with respect to the arrangement mode of the light sensitive diode of correspondence, described first arrangement mode and described second arrangement mode axisymmetricly, the symmetry axis of described first arrangement mode and described second arrangement mode is along the direction of pixel column or the direction of pixel column.
Fig. 5 is the transfer tube of R pixel in the R pel array of the present invention's second specific embodiment arrangement mode schematic diagram of corresponding light sensitive diode relatively, with reference to figure 5, be example with the R pixel among Fig. 5, with x axle (pixel row direction) and y axle (pixel column direction) the R pel array is divided into A by its center, B, C, four zones of D, transfer tube can be three kinds with respect to the arrangement mode of the light sensitive diode of correspondence, be respectively the R pixel 20a that is positioned at the a-quadrant, its transfer tube 22a is with respect to first arrangement mode of the light sensitive diode 21a of correspondence, be positioned at the R pixel 20b in B zone, its transfer tube 22b is with respect to second arrangement mode of the light sensitive diode 21b of correspondence, be positioned at the R pixel 20c in C zone, its transfer tube 22c is with respect to the 3rd arrangement mode of the light sensitive diode 21c of correspondence, first arrangement mode and second arrangement mode be (about the y axial symmetry) axisymmetricly, first arrangement mode and the 3rd arrangement mode be (about the x axial symmetry) axisymmetricly, and the symmetry axis of described first arrangement mode and described second arrangement mode is vertical with the symmetry axis of described the 3rd arrangement mode with described first arrangement mode, be that the x axle is vertical with the y axle, just x axle and y axle are respectively along pixel column and pixel column direction.Be positioned at the pixel 20d in D zone, transfer tube 22d with respect to the arrangement mode of the light sensitive diode 21d of correspondence can for first arrangement mode, second arrangement mode, the 3rd arrangement mode one of them, be shown as second arrangement mode among Fig. 5.
Pixel for other Color Channels, transfer tube is with respect to the arrangement mode of the light sensitive diode of correspondence, and light sensitive diode 21a, 21b, 21c, 21d in the pixel, reset transistor 23a, 23b, 23c, 23d, the source is followed the arrangement mode of pipe 24a, 24b, 24c, 24d etc. and can be known by inference in conjunction with Fig. 5 according to R pixel and the above explanation that Fig. 4 is described.In a-quadrant and B zone and in a-quadrant and the C zone, when imaging, be in the image brightness and the color basically identical of symmetric position like this.
Fig. 6 is the transfer tube of R pixel in the R pel array of the present invention's the 3rd specific embodiment arrangement mode schematic diagram of corresponding light sensitive diode relatively, with reference to figure 6, be example with the R pixel among Fig. 6, with x axle (pixel row direction) and y axle (pixel column direction) the R pel array is divided into A by its center, B, C, four zones of D, pixel for same Color Channel, transfer tube can be three kinds with respect to the arrangement mode of the light sensitive diode of correspondence, be respectively the R pixel 30a that is positioned at the a-quadrant, its transfer tube 32a is with respect to first arrangement mode of the light sensitive diode 31a of correspondence, be positioned at the R pixel 30b in B zone, its transfer tube 32b is with respect to second arrangement mode of the light sensitive diode 31b of correspondence, be positioned at the R pixel 30d in D zone, its transfer tube 32d is with respect to the 4th arrangement mode of the light sensitive diode 31d of correspondence, first arrangement mode and second arrangement mode be (about the y axial symmetry) axisymmetricly, second arrangement mode and the 4th the arrangement mode symmetry axis of (about the x axial symmetry) and described first arrangement mode and described second arrangement mode axisymmetricly are vertical with the symmetry axis of described the 4th arrangement mode with described second arrangement mode, be that the x axle is vertical with the y axle, just x axle and y axle are respectively along pixel column and pixel column direction.Be positioned at the pixel 30c in C zone, transfer tube 32c with respect to the arrangement mode of the light sensitive diode 21d of correspondence can for first arrangement mode, second arrangement mode, the 4th arrangement mode one of them, be shown as first arrangement mode among Fig. 6.
For other Color Channel pixels, transfer tube is with respect to the arrangement mode of the light sensitive diode of correspondence, and light sensitive diode 31a, 31b, 31c, 31d in the pixel, reset transistor 33a, 33b, 33c, 33d, the source is followed the arrangement mode of pipe 34a, 34b, 34c, 34d etc. and can be known by inference in conjunction with Fig. 6 according to R pixel and the above explanation that Fig. 4 is described.In a-quadrant and B zone and in B zone and the D zone, when imaging, be in the image brightness and the color basically identical of symmetric position like this.
Fig. 5 and Fig. 6 are in wherein three zones in four zones, be in the pixel of symmetric position, its transfer tube is followed the example of the arrangement mode symmetry of pipe etc. with respect to the arrangement mode of the light sensitive diode of correspondence and the light sensitive diode in the pixel, reset transistor, source, and those skilled in the art can know the pel array that comprises three kinds of arrangement modes of other modes by inference according to above-described embodiment.
Fig. 7 is the transfer tube arrangement mode schematic diagram of corresponding light sensitive diode relatively of R pixel in the R pel array of the 4th specific embodiment, with reference to figure 7, with x axle (pixel row direction) and y axle (pixel column direction) the R pel array is divided into A by its center, B, C, four zones of D, transfer tube can be two kinds with respect to the arrangement mode of the light sensitive diode of correspondence, be respectively the R pixel 40a that is positioned at a-quadrant and C zone, its transfer tube 42a is with respect to first arrangement mode of the light sensitive diode 41a of correspondence, be positioned at the R pixel 40b in B zone and D zone, its transfer tube 42b is with respect to second arrangement mode of the light sensitive diode 41b of correspondence, and first arrangement mode and second arrangement mode be (about the y axial symmetry) axisymmetricly.
According to the 4th specific embodiment, two kinds of arrangement modes also can be for being positioned at the R pixel in a-quadrant and B zone, its transfer tube is with respect to first arrangement mode of the light sensitive diode of correspondence, be positioned at the R pixel in C zone and D zone, its transfer tube is with respect to second arrangement mode of the light sensitive diode of correspondence, and first arrangement mode and second arrangement mode be (about the x axial symmetry) axisymmetricly.
For other color pixel, transfer tube is with respect to the arrangement mode of the light sensitive diode of correspondence and light sensitive diode 41a, 41b in the pixel, reset transistor 43a, 43b, and the arrangement mode of pipe 44a, 44b etc. is followed in the source, can can know by inference according to R pixel and the above explanation that Fig. 4 is described.When imaging, be positioned at the image brightness that is in symmetric position and the color basically identical of x axle or y axle both sides like this.
In the above-described specific embodiment, do not comprise capable gate tube in the imageing sensor, in other embodiments, comprise capable gate tube in the imageing sensor, then in this embodiment, for the pixel of same Color Channel, the arrangement mode that pipe, reset transistor and row gate tube are followed in the source also axisymmetricly, its axisymmetric condition is identical with respect to the axisymmetric condition of corresponding light sensitive diode arrangement mode with transfer tube.Do not do detailed description at this, those skilled in the art can know the arrangement mode that pipe, reset transistor and row gate tube are followed in the source by inference according to the description of above concrete enforcement.
Imageing sensor of the present invention is charge-coupled image sensor or complementary metal oxide imageing sensor.Need to prove that the specific embodiment of the invention is that example is elaborated with the Baeyer pel array, pel array of the present invention is not limited to the Baeyer pel array.And the present invention only at a kind of transfer tube of the prior art arrangement mode with respect to the light sensitive diode of correspondence, has illustrated specific embodiments of the invention.The invention is not restricted to above-described specific embodiment, at other arrangement modes of transfer tube in the prior art with respect to the light sensitive diode of correspondence, for example, the double image pixel array (Two pixel array) of overlapping reading circuit for a plurality of light sensitive diodes shared.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (9)
1. imageing sensor comprises:
Substrate;
Be positioned at described suprabasil pel array, described pel array comprises a plurality of pixels, and described a plurality of pixels are ranks arranges, and each pixel comprises light sensitive diode and transfer tube;
It is characterized in that,
Pixel for same Color Channel, transfer tube comprises first arrangement mode and second arrangement mode at least with respect to the arrangement mode of the light sensitive diode of correspondence, described first arrangement mode and described second arrangement mode axisymmetricly, the symmetry axis of described first arrangement mode and described second arrangement mode is along the direction of pixel column or the direction of pixel column.
2. imageing sensor as claimed in claim 1, it is characterized in that, pixel for same Color Channel, transfer tube also comprises the 3rd arrangement mode with respect to the arrangement mode of the light sensitive diode of correspondence, described first arrangement mode and described the 3rd arrangement mode axisymmetricly, and the symmetry axis of described first arrangement mode and described second arrangement mode is vertical with the symmetry axis of described the 3rd arrangement mode with described first arrangement mode.
3. imageing sensor as claimed in claim 1, it is characterized in that, pixel for same Color Channel, transfer tube also comprises the 4th arrangement mode with respect to the arrangement mode of the light sensitive diode of correspondence, described second arrangement mode and described the 4th arrangement mode axisymmetricly, and the symmetry axis of described second arrangement mode and described the 4th arrangement mode is vertical with the symmetry axis of described second arrangement mode with described first arrangement mode.
4. imageing sensor as claimed in claim 1, it is characterized in that, pixel for same Color Channel, transfer tube also comprises the 3rd arrangement mode and the 4th arrangement mode with respect to the arrangement mode of the light sensitive diode of correspondence, described the 3rd arrangement mode and described the 4th arrangement mode axisymmetricly, and the symmetry axis of described first arrangement mode and second arrangement mode is identical with the symmetry axis of the 3rd arrangement mode and the 4th arrangement mode;
Described first arrangement mode also with described the 3rd arrangement mode axisymmetricly, described second arrangement mode also with described the 4th arrangement mode axisymmetricly, the symmetry axis of first arrangement mode and the 3rd arrangement mode is identical with the 4th arrangement mode symmetry axis with second arrangement mode, and the symmetry axis of described second arrangement mode and described the 4th arrangement mode is vertical with the symmetry axis of described second arrangement mode with described first arrangement mode.
5. as each described imageing sensor of claim 1～4, it is characterized in that, described pel array is the Baeyer pel array, described a plurality of pixel is three kinds of color pixel, be respectively R color pixel, G color pixel, B color pixel, described G color pixel comprises the pixel of G1 Color Channel and the pixel of G2 Color Channel.
6. as each described imageing sensor of claim 1～4, it is characterized in that, for the pixel of same Color Channel, the arrangement mode of light sensitive diode also axisymmetricly, its axisymmetric condition is identical with respect to the axisymmetric condition of corresponding light sensitive diode arrangement mode with transfer tube.
7. imageing sensor as claimed in claim 6, it is characterized in that, also comprise the source follow the pipe and reset transistor, pixel for same Color Channel, pipe and the arrangement mode of reset transistor are followed also axisymmetricly in the source, and its axisymmetric condition is identical with respect to the axisymmetric condition of corresponding light sensitive diode arrangement mode with transfer tube.
8. imageing sensor as claimed in claim 6, it is characterized in that, comprise that also the source follows pipe, reset transistor and row gate tube, pixel for same Color Channel, the arrangement mode that pipe, reset transistor and row gate tube are followed in the source also axisymmetricly, its axisymmetric condition is identical with respect to the axisymmetric condition of corresponding light sensitive diode arrangement mode with transfer tube.
9. as each described imageing sensor of claim 1～4, it is characterized in that described imageing sensor is charge-coupled image sensor or complementary metal oxide imageing sensor.
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| CN110235433A (en) * | 2019-04-30 | 2019-09-13 | 深圳市汇顶科技股份有限公司 | Pixel array arrangement method, pixel array, imaging sensor and terminal |
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