CN102184864A - Thin film transistor and manufacturing method thereof - Google Patents
Thin film transistor and manufacturing method thereof Download PDFInfo
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- CN102184864A CN102184864A CN2011100952311A CN201110095231A CN102184864A CN 102184864 A CN102184864 A CN 102184864A CN 2011100952311 A CN2011100952311 A CN 2011100952311A CN 201110095231 A CN201110095231 A CN 201110095231A CN 102184864 A CN102184864 A CN 102184864A
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Abstract
The invention relates to a thin film transistor and a manufacturing method thereof. The manufacturing method comprises the following steps of: forming a transparent source and a transparent drain on a substrate, wherein the transparent source is electrically insulated from the transparent drain; forming a patterned transparent oxide semiconductor layer on the substrate to fully coat the transparent source and the transparent drain; forming a gate insulating layer on the substrate, wherein the gate insulating layer at least covers on a part of patterned transparent oxide semiconductor layer between the transparent source and the transparent drain; and forming a transparent drain on the gate insulating layer above the transparent source and the transparent drain. According to the invention, the manufacturing yield of the thin film transistor can be increased, and the manufacturing cost can be lowered.
Description
Technical field
The invention relates to a kind of thin-film transistor and manufacture method thereof, and particularly relevant for a kind of clear films transistor and manufacture method thereof that adopts oxide semiconductor layer.
Background technology
Recently environmental consciousness comes back, and the display panels (Liquid crystal display panel, LCD panel) with advantageous characteristic such as low consumpting power, space utilization efficient are good, radiationless, high image quality has become the market mainstream.
In the past, display panels adopt mostly amorphous silicon (
a-Si) thin-film transistor or low temperature polycrystalline silicon (Low-temperature polysilicon, LTPS) thin-film transistor is as the switch module of each image element structure.Yet in recent years, existing research is pointed out: compared to amorphous silicon film transistor, oxide semiconductor (oxide semiconductor) thin-film transistor has higher carrier mobility (mobility); And compared to low-temperature polysilicon film transistor, oxide semiconductor thin-film transistor has preferable critical voltage (threshold voltage, Vth) uniformity.Therefore, the potential key component that becomes flat-panel screens of future generation of oxide semiconductor thin-film transistor.
In the application of various oxide semiconductor thin-film transistors, there is a kind of application to be: to utilize oxide semiconductor thin-film transistor to make clear films transistor array substrate (TFT array substrate).Based on the consideration that promotes the transparency, the designer has adopted is replaced by the material of printing opacity (as indium tin oxide, ITO) with the material of lighttight assembly in the plurality of groups of substrates of thin-film transistor (as adopting source electrode, drain, gate, scan line and the data wire etc. of metal).Yet, because the material behavior of indium tin oxide and the material behavior of the oxide semiconductor layer in the oxide semiconductor thin-film transistor (as indium oxide gallium zinc (IGZO)) are quite similar, the etching selectivity (etch selection ratio) that is both is quite approaching, will produce following problem.
More specifically, in the processing procedure of bottom gate (bottom gate) type oxide semiconductor thin-film transistor, when the source electrode on etching upper strata, drain (adopting ITO), it is also etched that the oxide semiconductor layer (adopt IGZO) of position below source electrode, drain takes place easily, the situation that causes oxide semiconductor layer to damage.
In addition, in the processing procedure of top gate (top gate) type oxide semiconductor thin-film transistor, when the oxide semiconductor layer (adopting IGZO) on etching upper strata, it is also etched that source electrode, the drain (adopt ITO) of position below oxide semiconductor layer then takes place easily, causes source electrode, the impaired situation of drain.
Summary of the invention
In view of this, the invention provides a kind of method of manufacturing thin film transistor, can improve the making yield of thin-film transistor, and can reduce cost of manufacture.
The invention provides a kind of thin-film transistor, it is low to have high process rate and cost of manufacture.
The invention provides a kind of method of manufacturing thin film transistor.On substrate, form transparent source electrode and the transparent drain that is electrically insulated each other.On substrate, form patterning transparent oxide semiconductor layer and coat transparent source electrode and transparent drain fully.Form the lock insulating barrier on substrate, the lock insulating barrier is covered in the partially patterned transparent oxide semiconductor layer between transparent source electrode and the transparent drain at least.On the lock insulating barrier of transparent source electrode, transparent drain top, form transparent gate.
The invention provides another kind of method of manufacturing thin film transistor.On substrate, form patterning transparent oxide semiconductor layer.On partially patterned transparent oxide semiconductor layer, form the pattern etched barrier layer.Form transparent source electrode and the transparent drain that is electrically insulated each other respectively in the both sides on pattern etched barrier layer, transparent source electrode, transparent drain and pattern etched barrier layer coat patterning transparent oxide semiconductor layer jointly fully.Form the lock insulating barrier on substrate, the lock insulating barrier covers transparent source electrode and transparent drain.On the lock insulating barrier of transparent source electrode, transparent drain top, form transparent gate.
The invention provides a kind of thin-film transistor, comprising: transparent source electrode that is electrically insulated each other and transparent drain, patterning transparent oxide semiconductor layer, lock insulating barrier and transparent gate.Patterning transparent oxide semiconductor layer coats transparent source electrode and transparent drain fully.The lock insulating barrier is covered in the partially patterned transparent oxide semiconductor layer between transparent source electrode and the transparent drain at least.Transparent gate is positioned on the lock insulating barrier of transparent source electrode, transparent drain top.
The invention provides another kind of thin-film transistor, comprising: patterning transparent oxide semiconductor layer, pattern etched barrier layer, transparent source electrode, transparent drain, lock insulating barrier and transparent gate.The pattern etched barrier layer is positioned on the partially patterned transparent oxide semiconductor layer.Transparent source electrode and transparent drain are electrically insulated each other and are positioned at the both sides on pattern etched barrier layer, and wherein, transparent source electrode, transparent drain and pattern etched barrier layer coat patterning transparent oxide semiconductor layer jointly fully.The lock insulating barrier covers transparent source electrode and transparent drain.Transparent gate is positioned on the lock insulating barrier of transparent source electrode, transparent drain top.
In one embodiment of this invention, the material of aforesaid transparent source electrode, transparent drain is to be selected from: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof.
In one embodiment of this invention, the material of aforesaid patterning transparent oxide semiconductor layer is to be selected from: indium oxide gallium zinc (IGZO), indium zinc oxide (IZO), indium oxide gallium (IGO), tin oxide (ZnO), cadmium oxide, germanium oxide (2CdOGeO
2), cobalt nickel oxide (NiCo
2O
4) and combination.
In one embodiment of this invention, aforesaid when forming transparent source electrode and transparent drain on the substrate, more comprise: form pixel electrode and transparent data line on substrate, pixel electrode and transparent drain electrically connect, and transparent data line and transparent source electrode electrically connect.
In one embodiment of this invention, aforesaid when coating transparent source electrode and transparent drain fully in forming patterning transparent oxide semiconductor layer on the substrate, patterning transparent oxide semiconductor layer also coats pixel electrode and transparent data line.
In one embodiment of this invention, the material of aforesaid pixel electrode and transparent data line is to be selected from: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof.
In one embodiment of this invention, when forming transparent gate on the lock insulating barrier of aforesaid transparent source electrode, transparent drain top, more comprise: on substrate, form transparent scan line, and transparent scan line and the electric connection of transparent gate.
In one embodiment of this invention, the material of aforesaid transparent gate and transparent scan line is to be selected from: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof.
In one embodiment of this invention; form after the transparent gate on the aforesaid lock insulating barrier above transparent source electrode, transparent drain; more comprise: on substrate, form the patterning protective layer; the patterning protective layer has a plurality of contact windows; expose the end of transparent data line of thin-film transistor and the end of transparent scan line, provide the source so that transparent scan line and transparent data line are electrically connected to the external drive signal respectively via contact window.
In one embodiment of this invention, aforesaid thin-film transistor can further comprise the patterning protective layer.The patterning protective layer covers whole thin-film transistor; the patterning protective layer has a plurality of contact windows; expose the end of transparent scan line of thin-film transistor and the end of transparent data line, provide the source so that transparent scan line and transparent data line are electrically connected to the external drive signal respectively via contact window.
Based on above-mentioned, in thin-film transistor of the present invention and manufacture method thereof, coat transparent source electrode and transparent drain fully by patterning transparent oxide semiconductor layer, in the process that etches patterning transparent oxide semiconductor layer, close transparent source electrode and the transparent drain of material that is positioned at patterning transparent oxide semiconductor layer below just can not be subjected to etching and cause damage.Thus, thin-film transistor of the present invention can have high yield and low cost of manufacture.
Similarly, in another thin-film transistor of the present invention and manufacture method thereof, coat patterning transparent oxide semiconductor layer jointly fully by transparent source electrode, transparent drain and pattern etched barrier layer, in the process that etches transparent source electrode, transparent drain, the close patterning transparent oxide semiconductor layer of material that is positioned at the below of transparent source electrode, transparent drain just can not be subjected to etching and cause damage.Thus, thin-film transistor of the present invention can have high yield and low cost of manufacture.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended graphic being described in detail below.
Description of drawings
Figure 1A to Fig. 1 E be first embodiment of the invention the thin-film transistor manufacturing process on look schematic diagram.
Fig. 2 A to Fig. 2 E is the generalized section of the thin-film transistor manufacturing process that illustrated corresponding to the line A-A ' of Figure 1A to Fig. 1 E successively.
Fig. 3 A to Fig. 3 F be second embodiment of the invention the thin-film transistor manufacturing process on look schematic diagram.
Fig. 4 A to Fig. 4 F is the generalized section of the thin-film transistor manufacturing process that illustrated corresponding to the line A-A ' of Fig. 3 A to Fig. 3 F successively.
[primary clustering symbol description]
100,200: thin-film transistor
102,202: substrate
104,204: patterning transparent oxide semiconductor layer
106,208: the lock insulating barrier
108: the patterning protective layer
206: the pattern etched barrier layer
D: transparent drain
DL: transparent data line
DL
T: the end of transparent data line
G: transparent gate
H: contact window
PE: pixel electrode
PS: the external drive signal provides the source
S: transparent source electrode
SL: transparent scan line
SL
T: the end of transparent scan line.
Embodiment
First embodiment]
[method of manufacturing thin film transistor]
Figure 1A to Fig. 1 E be first embodiment of the invention the thin-film transistor manufacturing process on look schematic diagram.Fig. 2 A to Fig. 2 E is the generalized section of the thin-film transistor manufacturing process that illustrated according to the line A-A ' of Figure 1A to Fig. 1 E.
Please refer to Figure 1A and Fig. 2 A, at first, on substrate 102, form transparent source S and the transparent drain D that is electrically insulated each other.When forming transparent source S and transparent drain D, can form pixel electrode PE and transparent data line DL simultaneously on substrate 102, wherein pixel electrode PE and transparent drain D electrically connect, and transparent data line DL and transparent source S electrically connect.
The material of substrate 102 for example is glass, quartz, organic polymer or other suitable light transmissive material.The material of transparent source S, transparent drain D, pixel electrode PE and transparent data line DL can be selected from: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof, but the present invention is not exceeded with above-mentioned.
Transparent source S, transparent drain D, pixel electrode PE can adopt general forming sputtering film with the production method of transparent data line DL, cooperate micro image etching procedure (that is step such as photoresistance coating, little shadow, etching, stripping), and form the pattern of transparent source S, transparent drain D, pixel electrode PE and transparent data line DL, will not describe in detail at this.
Please refer to Figure 1B and Fig. 2 B, then, on substrate 102, form patterning transparent oxide semiconductor layer 104 and coat transparent source S and transparent drain D fully.Patterning transparent oxide semiconductor layer 104 also coats pixel electrode PE and transparent data line DL fully.The material of patterning transparent oxide semiconductor layer 104 is to be selected from: indium oxide gallium zinc (IGZO), indium zinc oxide (IZO), indium oxide gallium (IGO), tin oxide (ZnO), cadmium oxide, germanium oxide (2CdOGeO
2), cobalt nickel oxide (NiCo
2O
4) and combination.
What deserves to be mentioned is that patterning transparent oxide semiconductor layer 104 is to coat transparent source S and transparent drain D, pixel electrode PE and transparent data line DL fully.Thus, in the process that etches patterning transparent oxide semiconductor layer 104, close transparent source S, transparent drain D, pixel electrode PE and the transparent data line DL of material that is positioned at patterning transparent oxide semiconductor layer 104 below just can not be subjected to etching and cause damage, and then makes the lifting of making yield, the cost of manufacture of thin-film transistor reduce.
The production method that forms patterning transparent oxide semiconductor layer 104 can adopt general forming sputtering film, cooperates micro image etching procedure (that is steps such as photoresistance coating, little shadow, etching, stripping), and the pattern of formation patterning transparent oxide semiconductor layer 104 will not describe in detail at this.
Please refer to Fig. 1 C and Fig. 2 C, then, on substrate 102, form lock insulating barrier 106.Lock insulating barrier 106 is covered in the partially patterned transparent oxide semiconductor layer 104 between transparent source S and the transparent drain D at least.For example, lock insulating barrier 106 can be formed on the substrate 102 comprehensively, and covers transparent source S and transparent drain D, pixel electrode PE, transparent data line DL and patterning transparent oxide semiconductor layer 104.
The material of lock insulating barrier 106 for example is the combination of Inorganic Dielectric Material (as the stack layer of silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds of materials), organic dielectric materials or organic and Inorganic Dielectric Material, but is not limited thereto.
Please refer to Fig. 1 D and Fig. 2 D, then, on the lock insulating barrier 106 of transparent source S, transparent drain D top, form transparent gate G.When forming transparent gate G, more can on substrate 102, form transparent scan line SL simultaneously, and transparent scan line SL and transparent gate G electric connection.The material of transparent gate G and transparent scan line SL is to be selected from: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof, but be not limited thereto.
Transparent gate G can adopt general forming sputtering film with the production method of transparent scan line SL, cooperates micro image etching procedure (that is steps such as photoresistance coating, little shadow, etching, stripping), and forms the pattern of gate G and scan line SL, will not describe in detail at this.So far, transparent gate G, transparent source S and transparent drain D can constitute thin-film transistor 100, and this thin-film transistor 100 with patterning transparent oxide semiconductor layer 104 as channel layer.When the scanning voltage that comes self-induced transparency scan line SL is opened the patterning transparent oxide semiconductor layer 104(channel layer of this thin-film transistor 100) time, can pass through transparent source S, patterning transparent oxide semiconductor layer 104, transparent drain D in regular turn from the image data voltage of transparent data line DL and be sent to pixel electrode PE.
Please refer to Fig. 1 E and Fig. 2 E, then, also can on substrate 102, form patterning protective layer 108.Patterning protective layer 108 has a plurality of contact window H, and contact window H exposes the end DL of the transparent data line DL of thin-film transistor 100
TEnd SL with transparent scan line SL
T, provide source PS so that transparent scan line SL and transparent data line DL are electrically connected to the external drive signal respectively via contact window H.
The material of patterning protective layer 108 (for example: the stack layer of silicon nitride, silica, silicon oxynitride or above-mentioned at least two kinds of materials), organic material or above-mentioned combination can be inorganic material.The external drive signal provides source PS for example to be chip for driving.So far, thin-film transistor 100 and pixel electrode PE can constitute the image element structure in order to image data displaying, and patterning protective layer 108 can be protected this image element structure.
[thin-film transistor]
Fig. 1 D be first embodiment of the invention thin-film transistor on look the schematic diagram generalized section.Fig. 2 D is the generalized section of the thin-film transistor that illustrated according to the line A-A ' of Fig. 1 D.Please refer to Fig. 1 D and Fig. 2 D, thin-film transistor 100 comprises: transparent source S that is electrically insulated each other and transparent drain D, patterning transparent oxide semiconductor layer 104, lock insulating barrier 106 and transparent gate G.
Patterning transparent oxide semiconductor layer 104 coats transparent source S and transparent drain D fully.Lock insulating barrier 106 is covered in the partially patterned transparent oxide semiconductor layer 104 between transparent source S and the transparent drain D at least.One transparent gate G is positioned on the lock insulating barrier 106 of transparent source S, transparent drain D top.
In addition, shown in Fig. 1 E and Fig. 2 E, thin-film transistor 100 can further comprise: patterning protective layer 108.Patterning protective layer 108 covers whole thin-film transistor 100.Patterning protective layer 110 has a plurality of contact window H.Contact window H exposes the end SL of the transparent scan line SL of thin-film transistor 100
TEnd DL with transparent data line DL
T, provide source PS so that transparent scan line SL and transparent data line DL are electrically connected to the external drive signal respectively via contact window H.Thin-film transistor 100 and pixel electrode PE can constitute the image element structure in order to image data displaying.Above-mentioned thin-film transistor 100 has simple structure and low cost of manufacture.
[second embodiment]
[method of manufacturing thin film transistor]
Fig. 3 A to Fig. 3 F be second embodiment of the invention the thin-film transistor manufacturing process on look schematic diagram.Fig. 4 A to Fig. 4 F is the generalized section of the thin-film transistor manufacturing process that illustrated according to the line A-A ' of Fig. 3 A to Fig. 3 F.
Please refer to Fig. 3 A and Fig. 4 A, at first, on substrate 202, form patterning transparent oxide semiconductor layer 204.The material of substrate 202 for example is glass, quartz, organic polymer or other suitable light transmissive material.The material of patterning transparent oxide semiconductor layer 204 is to be selected from: indium oxide gallium zinc (IGZO), indium zinc oxide (IZO), indium oxide gallium (IGO), tin oxide (ZnO), cadmium oxide, germanium oxide (2CdOGeO
2), cobalt nickel oxide (NiCo
2O
4) and combination.
The production method that forms patterning transparent oxide semiconductor layer 204 can adopt general forming sputtering film, cooperates micro image etching procedure (that is steps such as photoresistance coating, little shadow, etching, stripping), and the pattern of formation patterning transparent oxide semiconductor layer 204 will not describe in detail at this.
Please refer to Fig. 3 B and Fig. 4 B, then, on partially patterned transparent oxide semiconductor layer 204, form pattern etched barrier layer 206.The subregional patterning oxide semiconductor layer 204 of pattern etched barrier layer 206 covering part; patterning oxide semiconductor layer 204 in order to protection 206 belows, pattern etched barrier layer still can kept characteristic of semiconductor (can be used as the channel layer between follow-up source S and the drain D) through after the successive process, so pattern etched barrier layer 206 can be described as the path protection layer again.The material on pattern etched barrier layer 206 can be silicon dioxide or other material that is fit to.
The production method that forms pattern etched barrier layer 206 can adopt general forming sputtering film, cooperates micro image etching procedure (that is steps such as photoresistance coating, little shadow, etching, stripping), and the pattern on formation pattern etched barrier layer 206 will not describe in detail at this.
Please refer to Fig. 3 C and Fig. 4 C, then, form transparent source S and the transparent drain D that is electrically insulated each other respectively in the both sides on pattern etched barrier layer 206, transparent source S, transparent drain D and pattern etched barrier layer 206 coat patterning transparent oxide semiconductor layer 204 jointly fully.When forming transparent source S and transparent drain D, also can form pixel electrode PE and transparent data line DL simultaneously on substrate 202, wherein pixel electrode PE and transparent drain D electrically connect, and transparent data line DL and transparent source S electrically connect.
The material of transparent source S, transparent drain D, pixel electrode PE and transparent data line DL can be selected from: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof, but the present invention is not exceeded with above-mentioned.
Transparent source S, transparent drain D, pixel electrode PE can adopt general forming sputtering film with the production method of transparent data line DL, cooperate micro image etching procedure (that is step such as photoresistance coating, little shadow, etching, stripping), and form the pattern of transparent source S, transparent drain D, pixel electrode PE and transparent data line DL, will not describe in detail at this.
What deserves to be mentioned is that transparent source S, transparent drain D and pattern etched barrier layer 206 are to coat patterning transparent oxide semiconductor layer 204 jointly fully.Thus, in the process that etches transparent source S, transparent drain D, the close patterning transparent oxide semiconductor layer 204 of material that is positioned at transparent source S, transparent drain D below just can not be subjected to etching and cause damage, can make that the making yield of thin-film transistor promotes, cost of manufacture reduces.
Please refer to Fig. 3 D and Fig. 4 D, then, on substrate 202, form lock insulating barrier 208.Lock insulating barrier 208 covers transparent source S and transparent drain D.Furtherly, lock insulating barrier 208 can be formed on the substrate 202 comprehensively, and covers transparent source S, transparent drain D, patterning transparent oxide semiconductor layer 204, pattern etched barrier layer 206, pixel electrode PE and transparent data line DL.
The material of lock insulating barrier 208 for example is the combination of Inorganic Dielectric Material (as the stack layer of silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds of materials), organic dielectric materials or organic and Inorganic Dielectric Material, but is not limited thereto.
Please refer to Fig. 3 E and Fig. 4 E, then, on the lock insulating barrier 208 of transparent source S, transparent drain D top, form transparent gate G.When forming transparent gate G, more can on substrate 202, form transparent scan line SL simultaneously, and transparent scan line SL and transparent gate G electric connection.
The material of transparent gate G and transparent scan line SL is to be selected from: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof, but be not limited thereto.
Transparent gate G can adopt general forming sputtering film with the production method of scan line SL, cooperates micro image etching procedure (that is step such as photoresistance coating, little shadow, etching, stripping), and forms the pattern of transparent gate G and scan line SL, will not describe in detail at this.So far, transparent gate G, transparent source S and transparent drain D can constitute thin-film transistor 200, and this thin-film transistor 200 with patterning transparent oxide semiconductor layer 204 as channel layer.When the scanning voltage that comes self-induced transparency scan line SL is opened the patterning transparent oxide semiconductor layer 204(channel layer of this thin-film transistor 200) time, can pass through transparent source S, patterning transparent oxide semiconductor layer 204, transparent drain D in regular turn from the image data voltage of transparent data line DL and be sent to pixel electrode PE.
Referring again to Fig. 3 F and Fig. 4 F, then, also can on substrate 202, form patterning protective layer 210.Patterning protective layer 210 has a plurality of contact window H, and contact window H exposes the end DL of the transparent data line DL of thin-film transistor 200
TEnd SL with transparent scan line SL
T, provide source PS so that transparent scan line SL and transparent data line DL are electrically connected to the external drive signal respectively via contact window H.
The material of patterning protective layer 210 (for example: the stack layer of silicon nitride, silica, silicon oxynitride or above-mentioned at least two kinds of materials), organic material or above-mentioned combination can be inorganic material.The external drive signal provides source PS for example to be chip for driving.So far, thin-film transistor 200 and pixel electrode PE can constitute the image element structure in order to image data displaying, and patterning protective layer 210 can be protected this image element structure.
[thin-film transistor]
Fig. 3 E be second embodiment of the invention thin-film transistor on look schematic diagram.Fig. 4 E is the generalized section of the thin-film transistor that illustrated according to the line A-A ' of Fig. 3 E.Please refer to Fig. 3 E and Fig. 4 E, thin-film transistor 200 comprises: patterning transparent oxide semiconductor layer 204, pattern etched barrier layer 206, transparent source S, transparent drain D, lock insulating barrier 208 and transparent gate G.
Pattern etched barrier layer 206 is positioned on the partially patterned transparent oxide semiconductor layer 204.Transparent source S and transparent drain D are electrically insulated each other and are positioned at the both sides on pattern etched barrier layer 206, and wherein, transparent source S, transparent drain D and pattern etched barrier layer 206 coat patterning transparent oxide semiconductor layer 204 jointly fully.Lock insulating barrier 208 covers transparent source S and transparent drain D.Transparent gate G is positioned on the lock insulating barrier 208 of transparent source S, transparent drain D top.
In addition, shown in Fig. 3 F and Fig. 4 F, thin-film transistor 200 can further comprise: patterning protective layer 210.Patterning protective layer 210 covers whole thin-film transistor 200.Patterning protective layer 210 has a plurality of contact window H.Contact window H exposes the end SL of the transparent scan line SL of thin-film transistor 200
TEnd DL with transparent data line DL
T, provide source PS so that transparent scan line SL and transparent data line DL are electrically connected to the external drive signal respectively via contact window H.
Thin-film transistor 200 and pixel electrode PE can constitute the image element structure in order to image data displaying.Above-mentioned thin-film transistor 200 has simple structure and low cost of manufacture.
In sum, thin-film transistor of the present invention and manufacture method thereof have the following advantages at least:
Coat transparent source electrode and transparent drain fully by patterning transparent oxide semiconductor layer, in the process that etches patterning transparent oxide semiconductor layer, close transparent source electrode and the transparent drain of material that is positioned at patterning transparent oxide semiconductor layer below just can not be subjected to etching and cause damage.Thus, thin-film transistor can have high yield and low cost of manufacture.
Similarly, coat patterning transparent oxide semiconductor layer jointly fully by transparent source electrode, transparent drain and pattern etched barrier layer, in the process that etches transparent source electrode, transparent drain, be positioned at transparent source electrode, transparent drain below and the close patterning transparent oxide semiconductor layer of material just can not be subjected to etching and cause damage.Thus, thin-film transistor can have high yield and low cost of manufacture.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (19)
1. a method of manufacturing thin film transistor is characterized in that, comprising:
On a substrate, form a transparent source electrode and a transparent drain that is electrically insulated each other;
On this substrate, form a patterning transparent oxide semiconductor layer and coat this transparent source electrode and this transparent drain fully;
On this substrate, form a lock insulating barrier, be covered in this patterning transparent oxide semiconductor layer of part between this transparent source electrode and this transparent drain at least; And
On this lock insulating barrier of this transparent source electrode, this transparent drain top, form a transparent gate.
2. method of manufacturing thin film transistor according to claim 1, it is characterized in that: the material of described transparent source electrode, this transparent drain, this transparent gate is to be selected from: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof, the material of this patterning transparent oxide semiconductor layer is to be selected from: indium oxide gallium zinc, indium zinc oxide, indium oxide gallium, tin oxide, cadmium oxide, germanium oxide, cobalt nickel oxide and combination thereof.
3. method of manufacturing thin film transistor according to claim 1, it is characterized in that: when forming this transparent source electrode with this transparent drain on this substrate, more comprise: on this substrate, form a pixel electrode and a transparent data line, this pixel electrode electrically connects with this transparent drain, and this transparent data line electrically connects with this transparent source electrode.
4. method of manufacturing thin film transistor according to claim 3, it is characterized in that: when coating this transparent source electrode with this transparent drain fully in forming this patterning transparent oxide semiconductor layer on this substrate, this patterning transparent oxide semiconductor layer also coats this pixel electrode and this transparent data line.
5. method of manufacturing thin film transistor according to claim 3 is characterized in that: this pixel electrode is to be selected from the material of this transparent data line: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof.
6. method of manufacturing thin film transistor according to claim 1, it is characterized in that: when forming this transparent gate on this lock insulating barrier of this transparent source electrode, this transparent drain top, it is characterized in that: more comprise: on this substrate, form a transparent scan line, and this transparent scan line electrically connects with this transparent gate.
7. method of manufacturing thin film transistor according to claim 6 is characterized in that: the material of this transparent scan line is to be selected from: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof.
8. method of manufacturing thin film transistor according to claim 1 is characterized in that: form this transparent gate on this lock insulating barrier of this transparent source electrode, this transparent drain top after, more comprise:
On this substrate, form a patterning protective layer; have a plurality of contact windows; expose the end of a transparent data line of this thin-film transistor and the end of a transparent scan line, provide the source so that this transparent scan line and this transparent data line are electrically connected to an external drive signal respectively via those contact windows.
9. a method of manufacturing thin film transistor is characterized in that, comprising:
On a substrate, form a patterning transparent oxide semiconductor layer;
On this patterning transparent oxide semiconductor layer of part, form a pattern etched barrier layer;
Form a transparent source electrode and a transparent drain that is electrically insulated each other respectively in the both sides on this pattern etched barrier layer, this transparent source electrode, this transparent drain and this pattern etched barrier layer coat this patterning transparent oxide semiconductor layer jointly fully;
On this substrate, form a lock insulating barrier, cover this transparent source electrode and this transparent drain; And
On this lock insulating barrier of this transparent source electrode, this transparent drain top, form a transparent gate.
10. method of manufacturing thin film transistor according to claim 9, it is characterized in that: this transparent source electrode, this transparent drain are to be selected from the material of this transparent gate: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof, the material of this patterning transparent oxide semiconductor layer is to be selected from: indium oxide gallium zinc, indium zinc oxide, indium oxide gallium, tin oxide, cadmium oxide, germanium oxide, cobalt nickel oxide and combination thereof.
11. method of manufacturing thin film transistor according to claim 9, it is characterized in that: when forming this transparent source electrode of being electrically insulated each other respectively in the both sides on this pattern etched barrier layer with this transparent drain, more comprise: on this substrate, form a pixel electrode and a transparent data line, this pixel electrode electrically connects with this transparent drain, and this transparent data line electrically connects with this transparent source electrode.
12. method of manufacturing thin film transistor according to claim 11 is characterized in that: this pixel electrode is to be selected from the material of this transparent data line: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof.
13. method of manufacturing thin film transistor according to claim 9, it is characterized in that: when forming this transparent gate on this lock insulating barrier of this transparent source electrode, this transparent drain top, more comprise: on this substrate, form a transparent scan line, and this transparent scan line electrically connects with this transparent gate.
14. method of manufacturing thin film transistor according to claim 13 is characterized in that: the material of this transparent scan line is to be selected from: indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide and combination thereof.
15. method of manufacturing thin film transistor according to claim 9 is characterized in that: after on this lock insulating barrier of this transparent source electrode, this transparent drain top, forming this transparent gate, more comprise:
On this substrate, form a patterning protective layer; have a plurality of contact windows; expose the end of a transparent scan line of this thin-film transistor and the end of a transparent data line, provide the source so that this transparent scan line and this transparent data line are electrically connected to an external drive signal respectively via those contact windows.
16. a thin-film transistor is characterized in that, comprising:
A transparent source electrode that is electrically insulated each other and a transparent drain;
One patterning transparent oxide semiconductor layer coats this transparent source electrode and this transparent drain fully;
One lock insulating barrier is covered in this patterning transparent oxide semiconductor layer of part between this transparent source electrode and this transparent drain at least; And
One transparent gate is positioned on this lock insulating barrier of transparent source electrode, this transparent drain top.
17. thin-film transistor according to claim 16 is characterized in that, more comprises:
One patterning protective layer; cover whole this thin-film transistor; this patterning protective layer has a plurality of contact windows; expose the end of a transparent scan line of this thin-film transistor and the end of a transparent data line, provide the source so that this transparent scan line and this transparent data line are electrically connected to an external drive signal respectively via those contact windows.
18. a thin-film transistor is characterized in that, comprising:
One patterning transparent oxide semiconductor layer;
One pattern etched barrier layer is positioned on this patterning transparent oxide semiconductor layer of part;
An one transparent source electrode and a transparent drain are electrically insulated each other and are positioned at the both sides on this pattern etched barrier layer, and wherein, this transparent source electrode, this transparent drain and this pattern etched barrier layer coat this patterning transparent oxide semiconductor layer jointly fully;
One lock insulating barrier covers this transparent source electrode and this transparent drain; And
One transparent gate is positioned on this lock insulating barrier of this transparent source electrode, this transparent drain top.
19. thin-film transistor according to claim 18 is characterized in that, more comprises:
One patterning protective layer; cover whole this thin-film transistor; this patterning protective layer has a plurality of contact windows; expose the end of a transparent scan line of this thin-film transistor and the end of a transparent data line, provide the source so that this transparent scan line and this transparent data line are electrically connected to an external drive signal respectively via those contact windows.
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Application publication date: 20110914 |