CN102184839B - Thermal filed structure of semiconductor thermal treatment vacuum furnace - Google Patents
Thermal filed structure of semiconductor thermal treatment vacuum furnace Download PDFInfo
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- CN102184839B CN102184839B CN2011101054363A CN201110105436A CN102184839B CN 102184839 B CN102184839 B CN 102184839B CN 2011101054363 A CN2011101054363 A CN 2011101054363A CN 201110105436 A CN201110105436 A CN 201110105436A CN 102184839 B CN102184839 B CN 102184839B
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Abstract
The invention relates to a thermal filed structure of a semiconductor thermal treatment vacuum furnace, comprising a thermal filed tank located in the vacuum furnace, a furnace hearth arranged at the bottom of the thermal filed tank, a loading platform arranged on the furnace hearth and heaters arranged above and/or below the loading platform, wherein the thermal filed tank comprises a tank body and a tank cover, the opening at one side of the tank body is tightly sealed with the tank cover, and the tank body and the tank cover are both made of an insulation carbon felt materials; the loading platform comprises two side walls each of which is provided with a plurality of parallel grooves for containing workpieces; and the heaters are connected with an external electrode. In the invention, high-temperature-resistant paint is sprayed on the surface of the insulation carbon felt on the inner wall of the thermal field tank, the edges at the outlet of the tank body, the tank cover and an air window are sprayed with the high-temperature-resistant paint and further coated with a carbon-carbon composite material layer, so that the anti-oxidation effect of the thermal field tank is enhanced, the service life is increased, and the insulation effect is improved; and heating rods arranged in parallel in the heaters vertically arranged carry out balanced heating on the workpieces, thereby shortening the heating time, enhancing the thermal treatment efficiency, reducing the energy consumption and reducing the cost.
Description
Technical field
The present invention relates to the heat treatment technics field, relate in particular to a kind of semiconductor thermal treatment vacuum furnace thermal field structure.
Background technology
Be typically provided with heater and heat-insulation layer etc. in the thermal treatment vacuum furnace thermal field, heat-insulation layer plays heat-blocking action, and with difficult the scattering and disappearing of heat of protection vacuum furnace thermal field, and protection vacuum furnace body of heater is not by high temperature melt.
Existing thermal treatment vacuum furnace is in heating process, and temperature is up to 900 degrees centigrade, when blow-on in the stove; Temperature is also nearly 200 degrees centigrade in the stove, therefore, and during blow-on; Heat-insulation layer at high temperature is prone to oxidized, not only has a strong impact on the heat insulation effect of vacuum furnace thermal field, has reduced thermal field useful life; And need frequent replacing insulation material, and increased cost, influenced production.And the heater in the existing vacuum furnace, because the restriction on its structural design makes heating time oversize, increased energy consumption.
Summary of the invention
Main purpose of the present invention is to provide a kind of semiconductor thermal treatment vacuum furnace thermal field structure, is intended to improve the heat insulation effect in the vacuum furnace thermal field and prolongs thermal field useful life and cut down the consumption of energy.
In order to achieve the above object, the present invention proposes a kind of semiconductor thermal treatment vacuum furnace thermal field structure, comprising:
The thermal field case is positioned at vacuum furnace, comprises casing and case lid, casing one side opening and case lid driving fit, and casing and case lid are the heat preservation carbon felt material;
Siege comprises four feets, is arranged on said thermal field case bottom;
Loading stage is placed on the feet of said siege, comprises the two side, parallelly on the said sidewall is provided with some grooves, and this groove is used to place the flat board of shelving workpiece;
Heater is arranged on said loading stage top and/or below, is connected with outer electrode.
Preferably, the inner surface of said casing and/or edge of opening are coated with the high-temperature resistant coating layer.
Preferably, the edge of opening of said casing is wrapped with the carbon carbon composite layer at the high-temperature resistant coating layer, and said carbon carbon composite layer cross section is the U type.
Preferably, said carbon carbon composite layer is fixedly connected with casing through the molybdenum screw.
Preferably, said case lid surface is coated with the high-temperature resistant coating layer.
Preferably, said wall box and top are provided with and are used to observe and the air regulator of ventilation.
Preferably, the window edge of said air regulator is coated with the high-temperature resistant coating layer; The high-temperature resistant coating layer of the window edge of said air regulator is wrapped with the carbon carbon composite layer, is fixedly connected with casing through the molybdenum screw.
Preferably, said heater comprises:
Link is positioned at the top and/or the below of said loading stage, and is fixedly connected with casing, comprises two side levers that are parallel to each other;
Some heating rods are arranged side by side between two side levers of said link;
Two electrodes are connected with outer electrode, lay respectively at an end of two side levers of link, and electrically connect as its energising through link and heating rod.
Preferably, said heater is that graphite material is processed.
Preferably, said vacuum furnace comprises bell, and said case lid is fixed on the bell of said vacuum furnace.
A kind of semiconductor thermal treatment vacuum furnace thermal field structure that the present invention proposes; Through heat preservation carbon felt surface spraying high-temperature resistant coating at the inwall of thermal field case; And at edge, case lid and the air regulator place of casing outlet except the spraying high-temperature resistant coating, also wrap up the carbon carbon composite of one deck U type, thereby strengthened the oxidation-protective effect of thermal field case; Increase its useful life, improved heat insulation effect simultaneously; In addition, heater can be provided with up and down at loading stage, and the heating rod that is arranged side by side in the heater carries out the equilibrium heating to the workpiece to be heated on the loading stage, has not only shortened heating time, and has improved thermal effectiveness, has reduced energy consumption, has reduced cost.
Description of drawings
Fig. 1 is semiconductor thermal treatment vacuum furnace thermal field structure one an example structure sketch map of the present invention;
Fig. 2 is a box inner structure sketch map among semiconductor thermal treatment vacuum furnace thermal field structure one embodiment of the present invention;
Fig. 3 is a casing front view among semiconductor thermal treatment vacuum furnace thermal field structure one embodiment of the present invention;
Fig. 4 is an A-A direction cutaway view among Fig. 3;
Fig. 5 is a B-B direction cutaway view among Fig. 3;
Fig. 6 is a C place enlarged diagram among Fig. 5.
In order to make technical scheme of the present invention clearer, clear, will combine accompanying drawing to do further to detail below.
Embodiment
Technical scheme general thought of the present invention is: through the heat preservation carbon felt surface spraying high-temperature resistant coating at the inwall of thermal field case; And at edge, case lid and the air regulator place of casing outlet except the spraying high-temperature resistant coating; Also wrap up the carbon carbon composite of one deck U type; To strengthen the oxidation-protective effect of thermal field case, increase its useful life; In addition, heater can be provided with up and down at loading stage, and the heating rod that is arranged side by side in the heater carries out the equilibrium heating to the workpiece to be heated on the loading stage, to shorten heating time, has reduced energy consumption, has reduced cost.
Below will combine accompanying drawing and embodiment, the technical scheme that realizes goal of the invention will be elaborated.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Please in the lump with reference to Fig. 1, Fig. 2, Fig. 3, Fig. 4 and shown in Figure 5; Fig. 1 is semiconductor thermal treatment vacuum furnace thermal field structure one an example structure sketch map of the present invention; Fig. 2 is a box inner structure sketch map among semiconductor thermal treatment vacuum furnace thermal field structure one embodiment of the present invention, and Fig. 3 is a casing front view among semiconductor thermal treatment vacuum furnace thermal field structure one embodiment of the present invention; Fig. 4 is an A-A direction cutaway view among Fig. 3; Fig. 5 is a B-B direction cutaway view among Fig. 3.
A kind of semiconductor thermal treatment vacuum furnace thermal field structure that one embodiment of the invention proposes comprises: thermal field case 1, be arranged on siege 2, loading stage 3 and heater 4 in the thermal field case 1, wherein:
Loading stage 3 is placed on the feet of siege 5, and it comprises two side 31, horizontal parallel some grooves 32 that are provided with on the sidewall 31, and this groove 32 is used to place the flat board 2 of shelving workpiece.
Wherein, link 42 comprises two side levers 421 that are parallel to each other, and heating rod 43 is arranged side by side between two side levers 421 of link 42.
For the heater 4 that is arranged on loading stage 3 tops, its link 42 is positioned at the top of loading stage 3, and is fixed on the top heat preservation carbon felt of casing 11 through screw; For the heater 4 that is arranged on loading stage 3 belows, its link 42 is positioned at the below of loading stage 3, and specifically is positioned at the below of the siege 5 of loading stage 3 belows, is fixed on through screw on the both sides heat preservation carbon felt of casing 11.
Two electrodes 41 are arranged on two side levers 421 of an end of link 42, pass casing 11 and are connected with outer electrode, and is electrically connected with heating rod 43 through link 42, so that be that heating rod 43 is switched on it is heated.
This kind be the structural design of heater 4 up and down, can carry out the equilibrium heating to the workpiece on the loading stage 3, thereby shorten heating time, has reduced energy consumption.
Certainly, in other embodiments, heater 4 also can only be arranged on loading stage 3 above or below.
In addition, the sidewall of casing 11 and top also are provided with and are used to observe and the air regulator 112 of ventilation.
In the present embodiment, oxidation during because of blow-on influences its heat insulation effect for the heat preservation carbon felt material that prevents to process casing 11, is coated with the high-temperature resistant coating layer on the surface of inner surface, edge of opening 1111, air regulator 112 and the case lid 12 of casing 11.
Simultaneously, the edge of opening 1111 of casing 11 is wrapped with carbon carbon composite layer 113 at the high-temperature resistant coating layer, with the opening part oxidation at high temperature that prevents casing 11, the heat insulation effect of raising casing 11 further.
Wherein, the cross section of carbon carbon composite layer 113 is the U type, perhaps presses close to be advisable with the opening section shape of casing 11.Carbon carbon composite layer 113 is fixedly connected with casing 11 through molybdenum screw 114, and as shown in Figure 6, Fig. 6 is a C place enlarged diagram among Fig. 5.
Further, can also through the molybdenum screw carbon carbon composite layer be fixedly connected with casing 11 at the window edge of air regulator 112 and the high-temperature resistant coating layer outerwrap carbon carbon composite layer of case lid 12, oxidized with the heat preservation carbon felt that prevents air regulator 112 places.
Certainly, as required, also can be optionally to inner surface, edge of opening 1111, case lid 12, the air regulator 112 spraying high-temperature resistant coating layer or the carbon carbon composite layers of casing 11.
Compare prior art, the embodiment of the invention is through the heat preservation carbon felt surface spraying high-temperature resistant coating at the inwall of thermal field case, and at edge, case lid and the air regulator place of casing outlet except the spraying high-temperature resistant coating; Also wrap up the carbon carbon composite of one deck U type; Strengthen the oxidation-protective effect of thermal field case, increased its useful life, improved heat insulation effect simultaneously; Meet the requirements of temperature in the thermal field more easily, so energy consumption reduces; In addition, heater can be provided with up and down at loading stage, and the heating rod that is arranged side by side in the heater carries out the equilibrium heating to the workpiece to be heated on the loading stage; Not only shortened heating time; And improved thermal effectiveness, and further reduced energy consumption, reduced cost.
The above is merely the preferred embodiments of the present invention; Be not so limit claim of the present invention; Every equivalent structure or flow process conversion that utilizes specification of the present invention and accompanying drawing content to be done; Or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (6)
1. a semiconductor thermal treatment vacuum furnace thermal field structure is characterized in that, comprising:
The thermal field case is positioned at vacuum furnace, comprises casing and case lid, casing one side opening and case lid driving fit, and casing and case lid are the heat preservation carbon felt material; The inner surface of said casing and/or edge of opening are coated with the high-temperature resistant coating layer; The edge of opening of said casing is wrapped with the carbon carbon composite layer at the high-temperature resistant coating layer, and said carbon carbon composite layer cross section is the U type; Said wall box and top are provided with and are used to observe and the air regulator of ventilation; The window edge of said air regulator is coated with the high-temperature resistant coating layer; The high-temperature resistant coating layer of the window edge of said air regulator is wrapped with the carbon carbon composite layer, is fixedly connected with casing through the molybdenum screw;
Siege comprises four feets, is arranged on said thermal field case bottom;
Loading stage is placed on the feet of said siege, comprises the two side, parallelly on the said sidewall is provided with some grooves, and this groove is used to place the flat board of shelving workpiece;
Heater is arranged on said loading stage top and/or below, is connected with outer electrode.
2. thermal field structure according to claim 1 is characterized in that, said carbon carbon composite layer is fixedly connected with casing through the molybdenum screw.
3. thermal field structure according to claim 1 is characterized in that, said case lid surface is coated with the high-temperature resistant coating layer.
4. according to each described thermal field structure among the claim 1-3, it is characterized in that said heater comprises:
Link is positioned at the top and/or the below of said loading stage, and is fixedly connected with casing, comprises two side levers that are parallel to each other;
Some heating rods are arranged side by side between two side levers of said link;
Two electrodes are connected with outer electrode, lay respectively at an end of two side levers of link, and electrically connect as its energising through link and heating rod.
5. thermal field structure according to claim 4 is characterized in that, said heater is that graphite material is processed.
6. thermal field structure according to claim 1 is characterized in that said vacuum furnace comprises bell, and said case lid is fixed on the bell of said vacuum furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101054363A CN102184839B (en) | 2011-04-26 | 2011-04-26 | Thermal filed structure of semiconductor thermal treatment vacuum furnace |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101054363A CN102184839B (en) | 2011-04-26 | 2011-04-26 | Thermal filed structure of semiconductor thermal treatment vacuum furnace |
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| CN102184839A CN102184839A (en) | 2011-09-14 |
| CN102184839B true CN102184839B (en) | 2012-06-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011101054363A Active CN102184839B (en) | 2011-04-26 | 2011-04-26 | Thermal filed structure of semiconductor thermal treatment vacuum furnace |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103033045A (en) * | 2011-09-28 | 2013-04-10 | 喏莫里克株式会社 | Graphite heater furnace |
| CN114166015A (en) * | 2021-12-15 | 2022-03-11 | 临沂安信电气有限公司 | Semiconductor material heat treatment device for mobile terminal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1765006A (en) * | 2003-03-04 | 2006-04-26 | Axt公司 | Apparatus and method for reducing impurities in a semiconductor material |
| CN1994972A (en) * | 2006-12-06 | 2007-07-11 | 湖南南方搏云新材料有限责任公司 | Production method of high purity cured charcoal felt silicon crystal growth oven |
| CN200955908Y (en) * | 2006-09-15 | 2007-10-03 | 南京年达炉业科技有限公司 | Holding furnace body |
| WO2010026815A1 (en) * | 2008-09-04 | 2010-03-11 | 東京エレクトロン株式会社 | Heat treatment apparatus |
-
2011
- 2011-04-26 CN CN2011101054363A patent/CN102184839B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1765006A (en) * | 2003-03-04 | 2006-04-26 | Axt公司 | Apparatus and method for reducing impurities in a semiconductor material |
| CN200955908Y (en) * | 2006-09-15 | 2007-10-03 | 南京年达炉业科技有限公司 | Holding furnace body |
| CN1994972A (en) * | 2006-12-06 | 2007-07-11 | 湖南南方搏云新材料有限责任公司 | Production method of high purity cured charcoal felt silicon crystal growth oven |
| WO2010026815A1 (en) * | 2008-09-04 | 2010-03-11 | 東京エレクトロン株式会社 | Heat treatment apparatus |
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| CN102184839A (en) | 2011-09-14 |
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Address after: 518000, Shenzhen, Guangdong, Baoan District Fuyong Street on the south side of the first floor of Great Ocean Road 4, two floor East Patentee after: Shenzhen Gold Stone Technology Co., Ltd. Address before: 518000 Guangdong city of Shenzhen province Baoan District manhole Street third Jiao Sha Tau Tong industrial area ranked first, one to two Patentee before: Gold stone precision technology (Shenzhen) Co., Ltd. |
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Inventor after: Li Wenhong Inventor after: Zhu Baixi Inventor after: Nan Zhihua Inventor after: Han Lingli Inventor before: Han Lingli |
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Address after: Baoan District Songgang street, Shenzhen city 518105 Guangdong province with rich industrial zone safety run road No. 2 Patentee after: Shenzhen Gold Stone Technology Co., Ltd Address before: 518000, Shenzhen, Guangdong, Baoan District Fuyong Street on the south side of the first floor of Great Ocean Road 4, two floor East Patentee before: Shenzhen Gold Stone Technology Co., Ltd. |