CN102183875A - Roller-type ultraviolet ray soft stamping method - Google Patents
Roller-type ultraviolet ray soft stamping method Download PDFInfo
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- CN102183875A CN102183875A CN2011101183472A CN201110118347A CN102183875A CN 102183875 A CN102183875 A CN 102183875A CN 2011101183472 A CN2011101183472 A CN 2011101183472A CN 201110118347 A CN201110118347 A CN 201110118347A CN 102183875 A CN102183875 A CN 102183875A
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Abstract
The invention discloses a roller-type ultraviolet ray soft stamping method, and the method comprises the following steps: (1) manufacturing a hard stamping die by using a micromachining technology; (2) manufacturing a soft stamping die by reprinting the hard stamping die; (3) coating a stamping gel on the surface of a substrate; (4) linearly rolling the soft stamping die by using the roller, stamping a stamping pattern on the soft stamping die on the stamping gel on the surface of the substrate; (5) fully exposing the stamping gel by using the ultraviolet ray; (6) peeling the stamping gel from the soft stamping die after the stamping gel is completely cured. By combining the advantages of the ultraviolet stamping, the soft stamping and the roller-type stamping, the uniformity problem of the normal hard die stamping in a large-area pattern conversion is solved, and the influence of the bent substrate and irregular surface is reduced; the uniform stamping of a large-size sample wafer can be realized without high temperature and high pressure and an expensive laser and optical apparatus; and the whole process is simple, the stamping time is short and the controllability is high.
Description
Technical field
The invention belongs to micro-nano element manufacturing technical field, be specifically related to a kind of nano-imprinting method.
Background technology
Micro-nano device making technics, near rise during the last ten years along with the optoelectronic applications field, communication field, the development need in biological detection field and the new and high technology that is born.Promptly at semiconductor, on metal and other the various materials, according to application need, produce size in micron order or nano level structure, the characteristic of this structure bond material itself has unique application.The main technique flow process of micro-nano element manufacturing comprises that electron beam writes platemaking technology, and ultraviolet light is write platemaking technology, gas ions etching technique, metal evaporation technology etc.
Nanometer embossing is an important technology in the micro-nano device making technics, and nanometer embossing is taken the lead in proposing in nineteen ninety-five by Stephen Y Chou professor the earliest, and this is the brand-new figure transfer technology of a kind of difference and conventional lithographic techniques.Nanometer embossing is defined as: do not use light or irradiation that photoresist sensitization is shaped, but directly utilize physical mechanism structure nano-scale figure on silicon substrate or other substrate, compare with conventional lithographic techniques, its advantage is:
1) do not rely on optical exposure, the resolution height;
2) do not need expensive laser instrument and complicated accurate optical system, cost is low;
The figure conversion that 3) can realize walking abreast;
4) one-shot forming of 3 D complex structure.
Existing nanometer embossing mainly contains three kinds: hot press printing technology, ultraviolet stamping technique and little contact nanometer stamping technique.Wherein, because also there is inefficient problem at present in intrinsic heating and cooling process and the high-pressure process of hot press printing technology, has suitable technical difficulty in the practicality; And thereby ultraviolet stamping technique is to make impression glue can solidify the nanometer embossing of realizing the room temperature impression behind ultraviolet lighting by mix photoactive substance in impression glue, the desired pressure of its technology also reduces greatly, therefore ultraviolet stamping technique is a kind of more promising nano graph switch technology, it is optimized and improves, have significant marketable value.
Summary of the invention
In view of this, the invention provides a kind of roller type ultraviolet ray soft impression method, can realize the even impression of large scale print, whole technological process is simple, does not have the High Temperature High Pressure process, does not need expensive laser instrument and optical device, the impression time is short, the controllability height.
Roller type ultraviolet ray soft impression method of the present invention may further comprise the steps:
1) uses Micrometer-Nanometer Processing Technology and make hard making ide;
2) utilize hard making ide to turn over to scribe and make soft making ide;
3) apply impression glue at substrate surface;
4) utilize the soft making ide of the linear roll extrusion of roller, the coining pattern on the soft making ide is impressed on the impression glue of substrate surface;
5) use ultraviolet light that impression glue is fully exposed;
6) after the impression glue full solidification, peel off soft making ide.
Further, in the described step 1), described Micrometer-Nanometer Processing Technology is electron beam exposure and dry etching.
Further, in the described step 1), the concrete steps of the hard making ide of described making are:
A. on hard template, apply electron beam adhesive;
B. the coining pattern according to design carries out electron beam exposure to electron beam adhesive;
C. coining pattern on the electron gain bundle glue develops;
D. be that mask utilizes dry etching to carry out the etching of hard template with the electron beam adhesive;
E. remove residual electrons bundle glue and finish the making of hard making ide.
Further, described electron beam adhesive is ZEP520A or PMMA.
Further, described hard template is a silicon wafer.
Further, described hard template is a quartz plate, and in described steps A, evaporation or deposit conductive layer on electron beam adhesive.
Further, described step 2) in, the hard making ide of described utilization turns over to be scribed the concrete steps of making soft making ide and is:
A. there is rotation on the one side of coining pattern to apply the PDMS solution of high elastic modulus at hard making ide;
B. the PDMS solution to high elastic modulus carries out heat curing on hot plate;
C. at the PDMS solution of the PDMS of high elastic modulus surface-coated low elastic modulus;
D. the PDMS solution to low elastic modulus carries out heat curing on hot plate;
E. the double-deck mould of the PDMS that solidifies is stripped down from hard making ide, obtain soft making ide.
Further, described impression glue is LR8765, Amonil series or OG 146.
Further, described backing material is quartz, silicon, sapphire, gallium arsenide, indium gallium arsenic, gallium nitride or various metal.
Beneficial effect of the present invention is: the present invention combines the advantage of ultraviolet ray impression, soft impression and roller type impression, overcome common die and be stamped in homogeneity question in the large-area graphs conversion, reduced the influence of substrate bending and surface irregularity, can realize the even impression of large scale print, whole technological process is simple, does not have the High Temperature High Pressure process, does not need expensive laser instrument and optical device, the impression time is short, the controllability height.
Description of drawings
In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention is described in further detail below in conjunction with accompanying drawing, wherein:
Fig. 1 is for making the process flow diagram of hard making ide among the present invention;
Fig. 2 is for making the process flow diagram of soft making ide among the present invention;
Fig. 3 is the process flow diagram of the soft impression of roller type ultraviolet ray among the present invention;
Fig. 4 is for utilizing method of the present invention imprint result SEM figure on four inches silicon chips.
Embodiment
Hereinafter with reference to accompanying drawing, the preferred embodiments of the present invention are described in detail.
Thereby the ultraviolet ray stamping technique is to make impression glue can solidify the nanometer embossing of realizing room temperature behind ultraviolet lighting by mix photoactive substance in impression glue, and its technological process does not have the High Temperature High Pressure process, and its desired pressure is low.Soft stamping technique is compared with common die impression, its advantage is that mold materials has certain elasticity, can be good at adapting to flatness tolerance and depth of parallelism error problem between mould and the substrate, reduce the influence of substrate bending and surface irregularity, can realize the even impression of large scale print.The roller type impression is because the continuity of technology self is fit to large area imprinting very much, and its line contact performance has also guaranteed the high compactedness and relative little pressure demand of impression glue to figure.
Roller type ultraviolet ray soft impression method of the present invention combines the advantage of ultraviolet ray impression, soft impression and roller type impression, may further comprise the steps:
1) uses Micrometer-Nanometer Processing Technology and make hard making ide
In the present embodiment, applying electronic bundle exposure and dry etching are made hard making ide, concrete steps as shown in Figure 1:
A. on hard template 1, apply electron beam adhesive 2(such as ZEP520A or PMMA etc.); Described hard template is silicon wafer or quartz plate etc.; If hard template is a quartz plate, then need evaporation or deposit conductive layer (10～20nm gold or aluminium etc.) on electron beam adhesive in addition;
B. the coining pattern according to design carries out electron beam exposure 3 to electron beam adhesive 2;
C. coining pattern on the electron gain bundle glue 2 develops;
D. be that mask utilizes dry etching to carry out the etching of hard template 1 with electron beam adhesive 2;
E. remove residual electrons bundle glue 2 and finish the making of hard making ide 4.
As the deep erosion of need hard template, can consider metal or silicon dioxide as hard mask, need before step D, add the wet method or the dry etching of hard mask in the advance deposit of row metal or silicon dioxide of steps A like this.Certainly, hard making ide is not limited to the exposure of applying electronic bundle and dry etching is made, and can also use other Micrometer-Nanometer Processing Technology and make, as: cover lithography, laser direct-writing technology, interference light exposure technique and electroplating technology etc.
2) utilize hard making ide to turn over to scribe and make soft making ide
In the present embodiment, the concrete steps of making soft making ide as shown in Figure 2:
A. have rotation on the one side of coining pattern to apply the PDMS(dimethyl silicone polymer of high elastic modulus at hard making ide 4, polydimethylsiloxane) solution 5;
B. the PDMS solution 5 to high elastic modulus carries out heat curing on hot plate;
C. at the PDMS solution 6 of the PDMS of high elastic modulus surface-coated low elastic modulus;
D. the PDMS solution 6 to low elastic modulus carries out heat curing on hot plate;
E. the double-deck mould of the PDMS that solidifies is stripped down from hard making ide 4, obtain soft making ide 7.
Can before step a, carry out surface treatment, as Cement Composite Treated by Plasma to hard making ide.Certainly, can also adopt injection moulding to duplicate to wait other method to turn over to scribe and make soft making ide from hard making ide.
3) at substrate 8 surface-coated impressions glue 9, as among Fig. 3 1. shown in; Described backing material is quartz, silicon, sapphire, gallium arsenide, indium gallium arsenic, gallium nitride or various metal; Described impression glue is LR8765, Amonil series or OG 146 etc.
4) utilize the soft making ide 7 of roller 10 linear roll extrusion, the coining pattern on the soft making ide 7 be impressed on the impression glue 9 on substrate 8 surfaces, as among Fig. 3 2. shown in.
5) use 11 pairs of impressions of ultraviolet light glue 9 fully to expose, as among Fig. 3 3. shown in.
6) after impression glue 9 full solidification, peel off soft making ide 7, as among Fig. 3 4. shown in.
The present invention can realize the even impression of large scale print, as shown in Figure 4, evenly impresses out the triangular crystal lattice photon crystal structure in 450nm cycle on four inches silicon chips.
Explanation is at last, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although by invention has been described with reference to the preferred embodiments of the present invention, but those of ordinary skill in the art is to be understood that, can make various changes to it in the form and details, and the spirit and scope of the present invention that do not depart from appended claims and limited.
Claims (9)
1. roller type ultraviolet ray soft impression method is characterized in that: may further comprise the steps:
1) uses Micrometer-Nanometer Processing Technology and make hard making ide;
2) utilize hard making ide to turn over to scribe and make soft making ide;
3) apply impression glue at substrate surface;
4) utilize the soft making ide of the linear roll extrusion of roller, the coining pattern on the soft making ide is impressed on the impression glue of substrate surface;
5) use ultraviolet light that impression glue is fully exposed;
6) after the impression glue full solidification, peel off soft making ide.
2. roller type ultraviolet ray soft impression method according to claim 1, it is characterized in that: in the described step 1), described Micrometer-Nanometer Processing Technology is electron beam exposure and dry etching.
3. roller type ultraviolet ray soft impression method according to claim 2, it is characterized in that: in the described step 1), the concrete steps of the hard making ide of described making are:
A. on hard template, apply electron beam adhesive;
B. the coining pattern according to design carries out electron beam exposure to electron beam adhesive;
C. coining pattern on the electron gain bundle glue develops;
D. be that mask utilizes dry etching to carry out the etching of hard template with the electron beam adhesive;
E. remove residual electrons bundle glue and finish the making of hard making ide.
4. roller type ultraviolet ray soft impression method according to claim 3, it is characterized in that: described electron beam adhesive is ZEP520A or PMMA.
5. roller type ultraviolet ray soft impression method according to claim 3, it is characterized in that: described hard template is a silicon wafer.
6. roller type ultraviolet ray soft impression method according to claim 3, it is characterized in that: described hard template is a quartz plate, and in described steps A, evaporation or deposit conductive layer on electron beam adhesive.
7. roller type according to claim 1 ultraviolet ray soft impression method is characterized in that: described step 2), the hard making ide of described utilization turns over to be scribed the concrete steps of making soft making ide and is:
A. there is rotation on the one side of coining pattern to apply the PDMS solution of high elastic modulus at hard making ide;
B. the PDMS solution to high elastic modulus carries out heat curing on hot plate;
C. at the PDMS solution of the PDMS of high elastic modulus surface-coated low elastic modulus;
D. the PDMS solution to low elastic modulus carries out heat curing on hot plate;
E. the double-deck mould of the PDMS that solidifies is stripped down from hard making ide, obtain soft making ide.
8. according to any described roller type ultraviolet ray soft impression method of claim 1 to 7, it is characterized in that: described impression glue is LR8765, Amonil series or OG 146.
9. according to any described roller type ultraviolet ray soft impression method of claim 1 to 7, it is characterized in that: described backing material is quartz, silicon, sapphire, gallium arsenide, indium gallium arsenic, gallium nitride or various metal.
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| CN201110118347A CN102183875B (en) | 2011-05-09 | 2011-05-09 | Roller-type ultraviolet ray soft stamping method |
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| CN201110118347A CN102183875B (en) | 2011-05-09 | 2011-05-09 | Roller-type ultraviolet ray soft stamping method |
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| CN102183875B CN102183875B (en) | 2012-10-03 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102529097A (en) * | 2011-12-26 | 2012-07-04 | 北京航空航天大学 | Method for manufacturing larger-area anti-adsorption surface with emulational shark skin appearance |
| CN103048707A (en) * | 2013-01-04 | 2013-04-17 | 苏州大学 | Method for producing sub-wavelength antireflection structure and compression moulding method of sub-wavelength antireflection structure |
| CN105511223A (en) * | 2014-09-26 | 2016-04-20 | 史晓华 | Soft film imprinting device for UV-curing nanoimprinting and soft film imprinting method |
| CN106681103A (en) * | 2017-01-03 | 2017-05-17 | 京东方科技集团股份有限公司 | Rolling wheel and manufacturing method therefor, and impressing equipment |
| CN108556501A (en) * | 2018-04-24 | 2018-09-21 | 河海大学常州校区 | A kind of method for stamping reducing elastomeric stamp deformation |
| CN111142329A (en) * | 2019-12-16 | 2020-05-12 | 合肥元旭创芯半导体科技有限公司 | Nondestructive semiconductor material SEM monitoring method |
| CN113156756A (en) * | 2021-03-18 | 2021-07-23 | 苏州莱科光学科技有限公司 | Preparation method of ultra-short-focus light-resistant curtain |
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| EP2038705A2 (en) * | 2006-06-30 | 2009-03-25 | E.I. Du Pont De Nemours And Company | Printing form precursor and process for preparing a stamp from the precursor |
| CN101520600A (en) * | 2008-02-27 | 2009-09-02 | 中国科学院微电子研究所 | Method for manufacturing light-transmitting nano-imprint template based on X-ray exposure technology |
| CN101581878A (en) * | 2008-05-13 | 2009-11-18 | 上海市纳米科技与产业发展促进中心 | Fabricating method of soft template with nanometer structure |
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| CN1916759A (en) * | 2005-06-10 | 2007-02-21 | 奥布杜卡特公司 | Pattern replication with intermediate stamp |
| EP2038705A2 (en) * | 2006-06-30 | 2009-03-25 | E.I. Du Pont De Nemours And Company | Printing form precursor and process for preparing a stamp from the precursor |
| CN101520600A (en) * | 2008-02-27 | 2009-09-02 | 中国科学院微电子研究所 | Method for manufacturing light-transmitting nano-imprint template based on X-ray exposure technology |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102529097A (en) * | 2011-12-26 | 2012-07-04 | 北京航空航天大学 | Method for manufacturing larger-area anti-adsorption surface with emulational shark skin appearance |
| CN103048707A (en) * | 2013-01-04 | 2013-04-17 | 苏州大学 | Method for producing sub-wavelength antireflection structure and compression moulding method of sub-wavelength antireflection structure |
| CN105511223A (en) * | 2014-09-26 | 2016-04-20 | 史晓华 | Soft film imprinting device for UV-curing nanoimprinting and soft film imprinting method |
| CN105511223B (en) * | 2014-09-26 | 2022-12-27 | 苏州光越微纳科技有限公司 | Soft film imprinting device and method applied to ultraviolet curing nanoimprint lithography |
| CN106681103A (en) * | 2017-01-03 | 2017-05-17 | 京东方科技集团股份有限公司 | Rolling wheel and manufacturing method therefor, and impressing equipment |
| CN108556501A (en) * | 2018-04-24 | 2018-09-21 | 河海大学常州校区 | A kind of method for stamping reducing elastomeric stamp deformation |
| CN111142329A (en) * | 2019-12-16 | 2020-05-12 | 合肥元旭创芯半导体科技有限公司 | Nondestructive semiconductor material SEM monitoring method |
| CN113156756A (en) * | 2021-03-18 | 2021-07-23 | 苏州莱科光学科技有限公司 | Preparation method of ultra-short-focus light-resistant curtain |
| CN113156756B (en) * | 2021-03-18 | 2022-03-11 | 苏州莱科光学科技有限公司 | Preparation method of ultra-short-focus light-resistant curtain |
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| CN102183875B (en) | 2012-10-03 |
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Address after: 215513 No. four, 11 Seaway, Changshou City Economic Development Zone, Jiangsu, 104 Patentee after: SUZHOU GUANGDUO MICRO, NANO-DEVICE Co.,Ltd. Address before: 215513 No. four, 11 Seaway, Changshou City Economic Development Zone, Jiangsu, 104 Patentee before: SUZHOU GUANGDUO MICRO, NANO-DEVICE Co.,Ltd. |
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Address after: 215000 floors 1 and 2, building 7C, Changshu advanced manufacturing science and Technology Park, No. 2 Jianye Road, Yushan high tech Zone, Changshu, Suzhou, Jiangsu Patentee after: SUZHOU GUANGDUO MICRO, NANO-DEVICE Co.,Ltd. Address before: No. 104, No. 11, Sihai Road, Changshu Economic Development Zone, Jiangsu 215513 Patentee before: SUZHOU GUANGDUO MICRO, NANO-DEVICE Co.,Ltd. |
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