CN102183198A - 用于测量硅片的膜厚度的测量装置 - Google Patents
用于测量硅片的膜厚度的测量装置 Download PDFInfo
- Publication number
- CN102183198A CN102183198A CN201110062594.5A CN201110062594A CN102183198A CN 102183198 A CN102183198 A CN 102183198A CN 201110062594 A CN201110062594 A CN 201110062594A CN 102183198 A CN102183198 A CN 102183198A
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- sensor
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- current vortex
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 97
- 239000010703 silicon Substances 0.000 title claims abstract description 97
- 238000005259 measurement Methods 0.000 claims abstract description 47
- 238000001514 detection method Methods 0.000 claims abstract description 20
- 230000007246 mechanism Effects 0.000 claims description 34
- 238000003491 array Methods 0.000 claims description 5
- 230000005622 photoelectricity Effects 0.000 claims description 3
- 238000013519 translation Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
- G01B7/105—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance for measuring thickness of coating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
- G01P3/64—Devices characterised by the determination of the time taken to traverse a fixed distance
- G01P3/68—Devices characterised by the determination of the time taken to traverse a fixed distance using optical means, i.e. using infrared, visible, or ultraviolet light
Abstract
Description
Claims (10)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110062594.5A CN102183198B (zh) | 2011-03-15 | 2011-03-15 | 用于测量硅片的膜厚度的测量装置 |
PCT/CN2011/075513 WO2012122749A1 (zh) | 2011-03-15 | 2011-06-09 | 用于测量硅片的膜厚度的测量装置 |
US13/387,849 US8912790B2 (en) | 2011-03-15 | 2011-06-09 | Measuring device for measuring film thickness of silicon wafer |
TW100128833A TWI454658B (zh) | 2011-03-15 | 2011-08-12 | 用於測量矽片的膜厚度的測量裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110062594.5A CN102183198B (zh) | 2011-03-15 | 2011-03-15 | 用于测量硅片的膜厚度的测量装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102183198A true CN102183198A (zh) | 2011-09-14 |
CN102183198B CN102183198B (zh) | 2012-08-22 |
Family
ID=44569448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110062594.5A Active CN102183198B (zh) | 2011-03-15 | 2011-03-15 | 用于测量硅片的膜厚度的测量装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8912790B2 (zh) |
CN (1) | CN102183198B (zh) |
TW (1) | TWI454658B (zh) |
WO (1) | WO2012122749A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102445144A (zh) * | 2011-09-22 | 2012-05-09 | 清华大学 | 用于在线膜厚测量系统的标定方法及标定装置 |
CN104097118A (zh) * | 2013-04-02 | 2014-10-15 | 盛美半导体设备(上海)有限公司 | 无应力抛光集成装置 |
US20140367266A1 (en) * | 2013-06-12 | 2014-12-18 | Applied Materials, Inc. | Fast and continuous eddy-current metrology of a conductive film |
CN107243826A (zh) * | 2017-07-06 | 2017-10-13 | 天津华海清科机电科技有限公司 | 调整cmp后晶圆膜厚均匀性的方法 |
CN113028970A (zh) * | 2021-03-12 | 2021-06-25 | 北方民族大学 | 一种基于涡流技术的管道工件同时测距测厚法 |
CN114518088A (zh) * | 2022-02-16 | 2022-05-20 | 深圳市太科检测有限公司 | 一种用于测量沥青马歇尔试件试模内高度的方法及装置 |
CN117781988A (zh) * | 2024-02-27 | 2024-03-29 | 中国科学院长春光学精密机械与物理研究所 | 一种检测半导体晶片厚度的检测装置 |
CN117781988B (zh) * | 2024-02-27 | 2024-05-14 | 中国科学院长春光学精密机械与物理研究所 | 一种检测半导体晶片厚度的检测装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102049732B (zh) * | 2010-08-30 | 2012-05-23 | 清华大学 | 一种硅片边缘膜厚测量方法 |
TWI587931B (zh) * | 2012-11-30 | 2017-06-21 | Lg化學股份有限公司 | 滾筒、薄膜形成裝置以及於基板上形成薄膜的方法 |
US9505101B1 (en) * | 2015-06-24 | 2016-11-29 | The Boeing Company | Automated sanding system and method |
KR20220082887A (ko) * | 2019-10-17 | 2022-06-17 | 램 리써치 코포레이션 | 기판 표면들의 인-시츄 모니터링 (in-situ monitoring) |
Citations (5)
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JP2006010466A (ja) * | 2004-06-25 | 2006-01-12 | Matsushita Electric Ind Co Ltd | 板材の平坦度測定方法および装置 |
CN1739002A (zh) * | 2002-12-13 | 2006-02-22 | 应用材料有限公司 | 在两个涡流传感头之间测量待测物厚度的方法和装置 |
WO2009011417A1 (ja) * | 2007-07-18 | 2009-01-22 | Nikon Corporation | 検査装置および検査方法 |
CN201293627Y (zh) * | 2008-10-21 | 2009-08-19 | 中芯国际集成电路制造(上海)有限公司 | 厚度测量仪 |
CN101660896A (zh) * | 2009-09-23 | 2010-03-03 | 中国电子科技集团公司第四十五研究所 | 基于红外光学干涉法的半导体晶圆膜厚检测装置 |
Family Cites Families (13)
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US5062298A (en) * | 1989-12-05 | 1991-11-05 | E. I. Du Pont De Nemours And Company | Non-contact wet or dry film thickness measuring device using eddy current and ultrasonic sensors |
GB9712750D0 (en) * | 1997-06-17 | 1997-08-20 | Penny & Giles International Pl | Improvements relating to velocity sensors |
JP2002148012A (ja) * | 2000-11-08 | 2002-05-22 | Ulvac Japan Ltd | 膜厚測定装置及び膜厚測定方法 |
JP2003097935A (ja) * | 2001-09-20 | 2003-04-03 | Nippei Toyama Corp | 距離検出装置および厚さ検出装置 |
US7205166B2 (en) * | 2002-06-28 | 2007-04-17 | Lam Research Corporation | Method and apparatus of arrayed, clustered or coupled eddy current sensor configuration for measuring conductive film properties |
US7112961B2 (en) * | 2002-12-13 | 2006-09-26 | Applied Materials, Inc. | Method and apparatus for dynamically measuring the thickness of an object |
US7112960B2 (en) * | 2003-07-31 | 2006-09-26 | Applied Materials, Inc. | Eddy current system for in-situ profile measurement |
US6961133B2 (en) * | 2003-08-29 | 2005-11-01 | The Boeing Company | Method and apparatus for non-contact thickness measurement |
US20050083048A1 (en) * | 2003-10-21 | 2005-04-21 | Applied Materials, Inc. | Plating system with integrated substrate inspection |
EP2797109B1 (en) * | 2004-11-01 | 2018-02-28 | Ebara Corporation | Polishing apparatus |
US7952708B2 (en) * | 2007-04-02 | 2011-05-31 | Applied Materials, Inc. | High throughput measurement system |
US8628376B2 (en) * | 2008-11-07 | 2014-01-14 | Applied Materials, Inc. | In-line wafer thickness sensing |
JP5615831B2 (ja) * | 2008-11-14 | 2014-10-29 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 縁部分解能強化渦電流センサ |
-
2011
- 2011-03-15 CN CN201110062594.5A patent/CN102183198B/zh active Active
- 2011-06-09 US US13/387,849 patent/US8912790B2/en active Active
- 2011-06-09 WO PCT/CN2011/075513 patent/WO2012122749A1/zh active Application Filing
- 2011-08-12 TW TW100128833A patent/TWI454658B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1739002A (zh) * | 2002-12-13 | 2006-02-22 | 应用材料有限公司 | 在两个涡流传感头之间测量待测物厚度的方法和装置 |
JP2006010466A (ja) * | 2004-06-25 | 2006-01-12 | Matsushita Electric Ind Co Ltd | 板材の平坦度測定方法および装置 |
WO2009011417A1 (ja) * | 2007-07-18 | 2009-01-22 | Nikon Corporation | 検査装置および検査方法 |
CN201293627Y (zh) * | 2008-10-21 | 2009-08-19 | 中芯国际集成电路制造(上海)有限公司 | 厚度测量仪 |
CN101660896A (zh) * | 2009-09-23 | 2010-03-03 | 中国电子科技集团公司第四十五研究所 | 基于红外光学干涉法的半导体晶圆膜厚检测装置 |
Non-Patent Citations (1)
Title |
---|
《润滑与密封》 20060228 王亮亮 等 硅片化学机械抛光中表面形貌问题的研究 66-68,75 1-10 , 第174期 * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102445144A (zh) * | 2011-09-22 | 2012-05-09 | 清华大学 | 用于在线膜厚测量系统的标定方法及标定装置 |
CN102445144B (zh) * | 2011-09-22 | 2013-07-31 | 清华大学 | 用于在线膜厚测量系统的标定方法及标定装置 |
CN104097118A (zh) * | 2013-04-02 | 2014-10-15 | 盛美半导体设备(上海)有限公司 | 无应力抛光集成装置 |
US20140367266A1 (en) * | 2013-06-12 | 2014-12-18 | Applied Materials, Inc. | Fast and continuous eddy-current metrology of a conductive film |
US9631919B2 (en) | 2013-06-12 | 2017-04-25 | Applied Materials, Inc. | Non-contact sheet resistance measurement of barrier and/or seed layers prior to electroplating |
US10234261B2 (en) * | 2013-06-12 | 2019-03-19 | Applied Materials, Inc. | Fast and continuous eddy-current metrology of a conductive film |
US10260855B2 (en) | 2013-06-12 | 2019-04-16 | Applied Materials, Inc. | Electroplating tool with feedback of metal thickness distribution and correction |
CN107243826A (zh) * | 2017-07-06 | 2017-10-13 | 天津华海清科机电科技有限公司 | 调整cmp后晶圆膜厚均匀性的方法 |
CN113028970A (zh) * | 2021-03-12 | 2021-06-25 | 北方民族大学 | 一种基于涡流技术的管道工件同时测距测厚法 |
CN114518088A (zh) * | 2022-02-16 | 2022-05-20 | 深圳市太科检测有限公司 | 一种用于测量沥青马歇尔试件试模内高度的方法及装置 |
CN117781988A (zh) * | 2024-02-27 | 2024-03-29 | 中国科学院长春光学精密机械与物理研究所 | 一种检测半导体晶片厚度的检测装置 |
CN117781988B (zh) * | 2024-02-27 | 2024-05-14 | 中国科学院长春光学精密机械与物理研究所 | 一种检测半导体晶片厚度的检测装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201237367A (en) | 2012-09-16 |
US20140002062A1 (en) | 2014-01-02 |
US8912790B2 (en) | 2014-12-16 |
WO2012122749A1 (zh) | 2012-09-20 |
TWI454658B (zh) | 2014-10-01 |
CN102183198B (zh) | 2012-08-22 |
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Effective date of registration: 20190618 Address after: 300 350 Building 9, 8 Juxing Road, Haihe Science Park, Jinnan District, Tianjin Patentee after: TIANJIN HWATSING TECHNOLOGY COMPANY LIMITED (HWATSING CO., LTD.) Address before: 100084 Haidian District 100084-82 mailbox in Beijing Patentee before: Tsinghua University |
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Address after: 300350, Tianjin City, Jinnan District Science and Technology Park, Hai Hing Road, No. 9, building No. 8 Patentee after: Huahaiqingke Co.,Ltd. Address before: 300350, Tianjin City, Jinnan District Science and Technology Park, Hai Hing Road, No. 9, building No. 8 Patentee before: TSINGHUA University |