CN102175740A - Multilayer floating-gate all-solid-state pH value sensor based on standard CMOS (Complementary Metal Oxide Semiconductors) technology - Google Patents
Multilayer floating-gate all-solid-state pH value sensor based on standard CMOS (Complementary Metal Oxide Semiconductors) technology Download PDFInfo
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Abstract
The invention relates to a multilayer floating-gate all-solid-state pH value sensor based on a standard CMOS (Complementary Metal Oxide Semiconductors) technology, comprising a PMOS (P-channel Metal Oxide Semiconductor) field-effect tube consisting of a field-effect tube drain region and a field-effect tube source region, wherein the PMOS field-effect tube is connected with an oxide layer; a multilayer floating-gate structure covers the oxide layer; the multilayer floating-gate structure sequentially comprises a connection layer, a metal layer 1, a through hole layer and a metal layer 2 which are arranged from top to bottom; and the a hydrogen ion sensitive layer compounded by silica and silicon nitride covers the multilayer floating-gate structure. The invention provides the multilayer floating-gate all-solid-state pH value sensor based on the standard CMOS technology, which is compatible with the standard CMOS technology and convenient for integration.
Description
Technical field
The present invention relates to all-solid-state pH value sensor, be applicable to fields such as following microminiaturized, integrated and intelligentized new bio sensor-based system and medical science.
Background technology
PH value sensor has important use and is worth in fields such as biological chemistry, medical science.Propose so far from pH value notion in 1909, the stages such as glass electrode pH value sensor, solid-state sensitive electrode pH value sensor, light-addressable potentiometric pH value sensor, field effect transistor pH value sensor have been experienced in the development of pH value sensor.
Along with the development of Micrometer-Nanometer Processing Technology, the researchist combines ion-sensitive, selection electrode manufacturing technology with solid-state microelectronics, developed novel semiconductor hydrogen ion Sensitive Apparatus.PH value sensing unit combining electrochemical and transistorized dual nature that this is novel, compare with traditional pH value sensor, it has following advantage: (1) highly sensitive, the response fast, input impedance is high, output impedance is low, have the function that impedance conversion and signal amplify concurrently, can avoid the interference effect of extraneous induction and secondary circuit; (2) volume is little, and is in light weight, is specially adapted to the dynamic monitoring in the biosome; (3) not only can realize the miniaturization of individual devices, and can adopt integrated circuit technology and micro-processing technology, realize the integrated of different kinds of ions and multifunction device, have microminiaturization, integrated and intelligentized development potentiality.Can be connected with computing machine in addition, be implemented in line traffic control and monitoring in real time.
Though this structure pH value sensor is by combining the solid state of having realized structure with microelectronic technique, for the microminiaturization of pH value sensor and integrated provide technical may, what but this sensing arrangement adopted is " naked grid " structure, by the responsive film of deposit hydrogen ion on gate oxide, with grid " autoregistration " technology of standard CMOS process can not be compatible.PH value sensing unit and signal processing circuit can't be integrated on the same chip.
Summary of the invention
For overcome existing solid-state pH value sensor can't be with the standard CMOS process compatibility, be unfavorable for integrated deficiency, the invention provides and a kind ofly realizes and the standard CMOS process compatibility, be convenient to integrated multi-layer floating gate all-solid-state pH value sensor based on standard CMOS process.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of multi-layer floating gate all-solid-state pH value sensor based on standard CMOS process, comprise the PMOS field effect transistor that field effect transistor drain region and field effect transistor source region constitute, described PMOS field effect transistor is connected with oxide layer, cover the multilayer suspension grid structure on the described oxide layer, described multilayer suspension grid structure from last and on comprise successively and cover the responsive layer of the compound hydrogen ion of silicon dioxide and silicon nitride on the described multilayer suspension grid structure by 2 layers on articulamentum, 1 layer on metal, via layer and metal.
As preferred a kind of scheme: described multi-layer floating gate all-solid-state pH value sensor also comprises signal processing circuit, source-drain current and source-drain voltage in order to constant PMOS field effect transistor, when described PMOS field effect transistor is operated in linear zone, the source voltage terminal of PMOS field effect transistor is with the output of threshold voltage reverse linear, thereby output voltage and pH value of solution value are linear.
Further, described signal processing circuit comprises reference voltage source, Cascode structure current mirror, track to track follower and resistance R, and described reference voltage source output burning voltage provides voltage bias to current mirror, produces the current source of current constant.Described current source is series between supply voltage and the PMOS field effect transistor source electrode, for the PMOS field effect transistor provides constant source-drain current, described two track to track followers are series at the other end of PMOS field effect transistor source electrode and resistance R one end and drain electrode of PMOS field effect transistor and resistance R respectively, form feedback circuit, described resistance R is connected with another and is produced the source-drain voltage of constant PMOS field effect transistor with the current source on ground.
Technical conceive of the present invention is: the multi-layer floating gate all-solid-state pH value sensor based on standard CMOS process is that pH value sensing technology is combined with standard CMOS process.Improved pH value sensing unit adopts the structure of multi-layer floating gate, and is compatible fully with standard CMOS process.The signal processing circuit monolithic is integrated on pH value sensing unit and the sheet, can realize on-line monitoring and processing to test signal.Solid state, the microminiaturization, integrated and intelligent of pH value sensor have been realized.And provide platform for breadboard research on follow-up multi-functional integrated sensing chip, biochip and the sheet.
Beneficial effect of the present invention mainly shows: 1, can with the standard CMOS process compatibility, promptly with now main flow microelectronic technique compatibility, to the multi-functional biochip of later design, disposal system provides the foundation on the sheet; 2, by integrated constant current constant voltage module on sheet, the solution pH can be converted to voltage signal output, realized the preprocessing function of signal on the sheet, this conversion of signals has made things convenient for the further signal Processing in back.
Description of drawings
Fig. 1 is based on the multi-layer floating gate pH value sensing unit sectional view of standard CMOS process.
Fig. 2 is based on the multi-layer floating gate pH value sensing unit equivalence SPICE model of standard CMOS process.
Fig. 3 is that ideally interfacial potential and pH value of solution value concern simulation curve.
Fig. 4 is a signal processing circuit schematic diagram on the constant current constant voltage sheet.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.
With reference to Fig. 1～Fig. 4, a kind of multi-layer floating gate all-solid-state pH value sensor based on standard CMOS process, comprise the PMOS field effect transistor that field effect transistor drain region and field effect transistor source region constitute, described PMOS field effect transistor is connected with oxide layer, cover the multilayer suspension grid structure on the described oxide layer, described multilayer suspension grid structure from last and on comprise successively and cover the responsive layer of the compound hydrogen ion of silicon dioxide and silicon nitride on the described multilayer suspension grid structure by 2 layers on articulamentum, 1 layer on metal, via layer and metal.
Described multi-layer floating gate all-solid-state pH value sensor also comprises signal processing circuit, source-drain current and source-drain voltage in order to constant PMOS field effect transistor, when described PMOS field effect transistor is operated in linear zone, the source voltage terminal of PMOS field effect transistor is with the output of threshold voltage reverse linear, thereby output voltage and pH value of solution value are linear.
Described signal processing circuit comprises reference voltage source, Cascode structure current mirror, track to track follower and resistance R, described reference voltage source output burning voltage provides voltage bias to current mirror, produce the current source of current constant, described current source is series between supply voltage and the PMOS field effect transistor source electrode, for the PMOS field effect transistor provides constant source-drain current.Described two track to track followers are series at the other end of PMOS field effect transistor source electrode and resistance R one end and drain electrode of PMOS field effect transistor and resistance R respectively, form feedback circuit, described resistance R is connected with another and is produced the source-drain voltage of constant PMOS field effect transistor with the current source on ground.
Fig. 1 is the multi-layer floating gate pH value sensing unit sectional view of present embodiment based on standard CMOS process.Field effect transistor drain region 1 and field effect transistor source region 2 constitute the PMOS field effect transistor.PMOS pipe source end can link to each other with the biasing of N trap and eliminate the influence of the inclined to one side effect of lining to threshold voltage, but PMOS pipe just conducting when solution biasing 0V in addition can reduce the solution noise to output voltage influence.Can modulate the channel charge below the field effect transistor gate oxide 3 when the pH value of solution value changes, and then influence threshold voltage.What the present embodiment chip design was selected for use is two-metal processes, and polysilicon gate links to each other with through hole by contact hole with second layer metal with the ground floor metal and forms multilayer suspension grid structure 4.Silicon dioxide that LPCVD forms and silicon nitride composite sensing layer 5 can produce interfacial potential to hydrogen ion sensitivity in the detected solution 6.Need in solution, add reference electrode 7 when carrying out the solution actual measurement.
Fig. 2 is the multi-layer floating gate pH value sensing unit equivalence SPICE model of present embodiment based on standard CMOS process.This model has been considered the influence of solution and multi-layer floating gate electrode pair conventional MOS tube model, and conventional model is revised.It is that liquid when having considered that the solid reference electrode contacts with solution connects electromotive force that reference electrode liquid connects electromotive force 8.Solution resistance 9 is the solution equivalent resistance pressure drops that caused by solution conductivity.Solid-liquid interface electromotive force 10 is solid-liquid interface electromotive forces that sensitive layer produces after to the hydrogen ion sensitivity.Can need to consider the equivalent pressure drop 11 of multi-layer floating gate electrode by free electron in technological process because on polysilicon that suspends and the metal level.Between this floating gate electrode and the conventional metal-oxide-semiconductor grid certain metal routing distance is arranged in addition, need to consider equivalent metal routing resistance 12 and equivalent metal routing electric capacity 13.The metal-oxide-semiconductor macro model that this is new can be used in SPICE emulation, for signal processing circuit design and emulation on the sheet of back provide the basis.
Concern simulation curve as can be known according to Fig. 3 interfacial potential and pH value of solution value, the variation of pH value of solution value and the variation of interfacial potential ideally are linear.The control circuit of constant PMOS pipe source-drain voltage and source-drain current changes the source voltage terminal signal output that changes into linearity with threshold voltage among Fig. 4 with the pH value of solution value.I among Fig. 4
1And I
2Be constant current source, this current source provides stable output by the Cascode structure current mirror on the sheet.A
1And A
2Be the operational amplifier of single gain, according to the short and empty disconnected principle of the void of operational amplifier, I
1The electric current that provides is that working current, resistance R and I are leaked in the source of PMOS pipe
2Product be that operating voltage is leaked in the source of PMOS pipe.Realize the constant current constant voltage control of PMOS pipe by this biasing circuit.
Chip adopts goes up magnificent 0.6 μ m CMOS two-layer polysilicon two-metal processes realization, and area of chip is 2mm * 2mm.
Example: the multi-layer floating gate pH value sensing unit metal-oxide-semiconductor based on standard CMOS process uses " autoregistration " technology of polysilicon to define source-drain area in the present invention, has kept polysilicon gate.Polysilicon gate links to each other with metal 1 by contact hole, and metal 1 links to each other with metal 2 by through hole, forms the multi-layer floating gate structure that suspends.The passivation layer of deposit is as the responsive film of hydrogen ion on the suspension electrode.As shown in Figure 1.The pad technology by means of pressure welding area forms certain isolation window on every side in the sensitizing range among the present invention in addition, is used for the pH value sensing of film micro area, and the present invention adopts the polysilicon grating structure of interdigitated to increase the mutual conductance of metal-oxide-semiconductor.The macro model of the new construction sensing unit of setting up among Fig. 2 is applicable in the SPICE emulation, can direct nested use.
The signal processing circuit of sensor is formed as shown in Figure 4.Signal processing circuit comprises reference voltage source, Cascode structure current mirror, track to track (0-5V) follower and resistance etc.Voltage-reference provides stable voltage bias for current mirror, constitutes an accurate current source, avoids the influence of flow-route and temperature to the circuit working electric current.Adopt the Cascode current-mirror structure, further suppressed the raceway groove mudulation effect, increase the output resistance of current mirror, it is little to make electric current influenced by voltage fluctuation.The electric current I 1 that produces by current mirror provides constant source-drain current for sensing unit PMOS pipe, and I2 forms pressure drop by resistance R, keeps sensing unit PMOS pipe source-drain voltage constant through the follower feedback circuit.
If the threshold voltage V of PMOS pipe electrical measurement
TExpression, the floating gate structure PMOS pipe threshold voltage V in a certain specific pH value solution
T 'Expression, the sensitivity of CMOS pH value sensor is S, then V
T '=V
T+ S*pH.The control circuit of constant PMOS pipe source-drain voltage and source-drain current changes the source voltage terminal signal output that changes into linearity with threshold voltage with the pH value of solution value.Principle of work is summarized as follows: CMOS pH value working sensor is when linear zone, and in electrical measurement and solution testing, current/voltage all satisfies following relational expression:
The pH value sensing chip of present embodiment, chip adopt goes up magnificent 0.6 μ m CMOS two-layer polysilicon two-metal processes realization, and area of chip is 2mm * 2mm.Integrated pH value sensing unit, reference voltage source, buffer circuit, constant-current and constant-voltage control circuit and Gain Adjustable output circuit on the sheet.The chip of the present invention design is arranged in the middle lower position of chip with pressure welding area, and pH value sensitive zones is arranged in the top of chip.Because chip the first half has pressure welding area to arrange, then being equal to has increased available area on the chip, sensitive zones and control circuit part can be as far as possible away from, improved the reliability of hardened coating insulating gel simultaneously, improved the reliability of testing.
The multi-layer floating gate pH value sensing chip based on standard CMOS process of present embodiment design is benefiting our pursuits of following biochip design.Such sensor can combine the biological chemistry sensing unit with microelectric technique, further combine with standard CMOS process, realizes that the monolithic of multifunctional sensing unit and signal processing circuit is integrated.The present invention utilizes the passivation layer silicon nitride of standard CMOS process as the responsive layer of hydrogen ion, and pH value sensing unit carried out innovative design, integrated signal processing circuit can be converted into the variation of pH change in voltage output on the sheet, is microminiaturization truly, the design of integrated, intelligentized sensing chip.
Claims (3)
1. multi-layer floating gate all-solid-state pH value sensor based on standard CMOS process, comprise the PMOS field effect transistor that field effect transistor drain region and field effect transistor source region constitute, described PMOS field effect transistor is connected with oxide layer, it is characterized in that: cover the multilayer suspension grid structure on the described oxide layer, described multilayer suspension grid structure from last and on comprise successively and cover the responsive layer of the compound hydrogen ion of silicon dioxide and silicon nitride on the described multilayer suspension grid structure by 2 layers on articulamentum, 1 layer on metal, via layer and metal.
2. the multi-layer floating gate all-solid-state pH value sensor based on standard CMOS process as claimed in claim 1, it is characterized in that: described multi-layer floating gate all-solid-state pH value sensor also comprises signal processing circuit, source-drain current and source-drain voltage in order to constant PMOS field effect transistor, when described PMOS field effect transistor is operated in linear zone, the source voltage terminal of PMOS field effect transistor is with the output of threshold voltage reverse linear, thereby output voltage and pH value of solution value are linear.
3. the multi-layer floating gate all-solid-state pH value sensor based on standard CMOS process as claimed in claim 2, it is characterized in that: described signal processing circuit comprises reference voltage source, Cascode structure current mirror, track to track follower and resistance R, described reference voltage source output burning voltage provides voltage bias to current mirror, produce the current source of current constant, described current source is series between supply voltage and the PMOS field effect transistor source electrode, for the PMOS field effect transistor provides constant source-drain current, described two track to track followers are series at the other end of PMOS field effect transistor source electrode and resistance R one end and drain electrode of PMOS field effect transistor and resistance R respectively, form feedback circuit, described resistance R is connected with another and is produced the source-drain voltage of constant PMOS product effect pipe with the current source on ground.
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Cited By (4)
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| CN105301079A (en) * | 2015-10-13 | 2016-02-03 | 上海小海龟科技有限公司 | Semiconductor device for detecting ionic activity of object to be detected and detection method thereof |
| CN107064255A (en) * | 2017-05-24 | 2017-08-18 | 江苏大学 | A kind of combination electrode formula pH sensors based on CMOS technology and preparation method thereof |
| CN110618167A (en) * | 2019-09-23 | 2019-12-27 | 张家港万众一芯生物科技有限公司 | PH value detection device, preparation method thereof and PH value detection method |
| CN112567238A (en) * | 2018-06-22 | 2021-03-26 | 洛桑联邦理工学院 | Field effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105301079A (en) * | 2015-10-13 | 2016-02-03 | 上海小海龟科技有限公司 | Semiconductor device for detecting ionic activity of object to be detected and detection method thereof |
| CN105301079B (en) * | 2015-10-13 | 2019-10-15 | 上海小海龟科技有限公司 | Semiconductor devices and its detection method for the detection of determinand ionic activity |
| CN107064255A (en) * | 2017-05-24 | 2017-08-18 | 江苏大学 | A kind of combination electrode formula pH sensors based on CMOS technology and preparation method thereof |
| CN107064255B (en) * | 2017-05-24 | 2019-04-30 | 江苏大学 | A kind of combination electrode formula pH sensor and preparation method thereof based on CMOS technology |
| CN112567238A (en) * | 2018-06-22 | 2021-03-26 | 洛桑联邦理工学院 | Field effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid |
| CN110618167A (en) * | 2019-09-23 | 2019-12-27 | 张家港万众一芯生物科技有限公司 | PH value detection device, preparation method thereof and PH value detection method |
| CN110618167B (en) * | 2019-09-23 | 2022-04-29 | 张家港万众一芯生物科技有限公司 | pH value detection device, preparation method thereof and pH value detection method |
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Application publication date: 20110907 |