CN102160201A - Optical cup for lighting module - Google Patents

Optical cup for lighting module Download PDF

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Publication number
CN102160201A
CN102160201A CN2009801362539A CN200980136253A CN102160201A CN 102160201 A CN102160201 A CN 102160201A CN 2009801362539 A CN2009801362539 A CN 2009801362539A CN 200980136253 A CN200980136253 A CN 200980136253A CN 102160201 A CN102160201 A CN 102160201A
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CN
China
Prior art keywords
light
lighting module
led chip
led
chip
Prior art date
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Pending
Application number
CN2009801362539A
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Chinese (zh)
Inventor
J·塞尔夫里安
D·汉比
A·M·斯科奇
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Osram Sylvania Inc
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Osram Sylvania Inc
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Filing date
Publication date
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Publication of CN102160201A publication Critical patent/CN102160201A/en
Pending legal-status Critical Current

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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/22—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/24—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
    • F21V7/26—Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material the material comprising photoluminescent substances
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/38—Combination of two or more photoluminescent elements of different materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0061—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED
    • G02B19/0066—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a LED in the form of an LED array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Abstract

The invention provides a lighting module comprising a base panel and a plurality of light-emitting diode (LED) chips attached directly to the base panel. The LED chips are in electrical communication with conductive traces on the base panel, which deliver a current to the LED chips. Various embodiments of this generally described lighting module are also presented. Additionally, methods of preparing such a lighting module, and system components of the lighting module are presented.

Description

The CD that is used for lighting module
Technical field
The present invention relates to lighting module.More specifically, the present invention relates to comprise the lighting module of light-emitting diode chip for backlight unit.
Background technology
Light-emitting diode (LED) is a semiconductor device luminous when being subjected to the electric weight excitation.Generally speaking, LED comprises the led chip that is arranged in the encapsulation.Led chip is with the impurity injection or mixes to form the semiconductive material (or combination of materials) of p-n junction.When electric current was flowed through forward biased led chip, electronics " was skipped " p-n junction and luminous.Encapsulation normally has plastics or the ceramic material that led chip is coupled to the electrical connection of current source.The major defect of LED encapsulation be that the thermal resistance that encapsulates may be very big (that is, greater than 100 ℃/W), this has worsened the life-span and the performance of led chip.Term " light-emitting diode chip for backlight unit ", " led chip ", " chip " or " LED tube core (die) " are used to represent the semiconductive p-n junction, and are different from term LED thus, and described LED generally comprises chip and encapsulates the two.
LED is than incandescent source light source more efficiently.Yet, use LED to be to obtain sufficient light from independent led chip as a major challenge of the light source of general lighting application.In other words, compare with the other light sources of for example tungsten filament, independent led chip does not provide enough light.Yet when some LED were combined into led array, the combination of all led chips and cumulative effect produced the light source with substantial light in the array.
LED is just experiencing and is being applied to the illumination application increasedly.The early stage using tendency of LED in illuminating equipment is commonly referred to as together the high-capacity LED (typically, 1W chip) of being grouped in of lighting module in employing.So can in illuminating equipment, adopt one or more lighting modules.In order to produce uniform light source, LED must arrange close enough " to be in harmonious proportion (blend) " light by diffuser.In addition, have the requirement of the increase of the thickness that minimizes illuminating equipment, this requires LED to arrange more closely.When LED moves closely more, there are the needs of the increase of external heat management solution (for example, fan, cooling fin, heat pipe etc.).
Except heat problem, the lighting module of use LED must be designed to solve the optical problem such as color homogeneity and stepping (binning).For example, depend on the semiconductive material of use, led chip can send the light of different colours.In order to produce white light, generally adopt two kinds of technology.In a kind of technology, three led chips (redness, a blueness and a green) bundle, and make accumulation output cause white light source.Second kind of technology adopts the UV/ blue led chip that applies or be packaged with phosphor.The light of led chip emission specific wavelength (in UV or the blue region).The light stimulus phosphor of emission, this causes the emission of white light.Yet, when making led chip, can the change led chip of wavelength of single semiconductive wafer.So led chip manufacturer must adopt expensive stepping process to come by wavelength tissue (or stepping) led chip.In order to ensure uniformity, the manufacturer of LED lighting module need be from the led chip among a small circle of stepping.This restriction has increased the manufacturing cost of lighting module.
Summary of the invention
Lighting module is proposed, a plurality of light-emitting diodes (LED) chip that it generally comprises substrate plate and directly is attached to substrate plate herein.Introduce each embodiment of this universal.In addition, introduction prepares the method for lighting module and the system component of lighting module.
Description of drawings
Be combined in this and form the description of drawings embodiments of the invention of this specification part.With the explanation that provides, accompanying drawing is used to explain principle of the present invention and makes various equivalent modifications can constitute and utilize the present invention thus.
Fig. 1 is the schematic diagram according to the lighting module of an embodiment.
Fig. 2 illustrates the lighting module 200 according to an embodiment.
Fig. 3 illustrates and substitutes the part end view that lighting module is arranged.
Fig. 4 illustrates and substitutes the part end view that lighting module is arranged.
Fig. 5 illustrates and substitutes the part end view that lighting module is arranged.
Fig. 6 illustrates the partial plan of the lighting module layout of Fig. 5.
Fig. 7 illustrates and substitutes the part end view that lighting module is arranged.
Fig. 8 illustrates and substitutes the part end view that lighting module is arranged.
Fig. 9 illustrates the end view of the CD of Fig. 8.
Figure 10 illustrates the perspective view of light cup (optical cup).
Figure 11 A illustrates the perspective top view of instead of optical cup.
Figure 11 B illustrates the perspective bottom view of the light cup of Figure 11 A.
Figure 12 illustrates the flow chart of explanation making according to the method for lighting module of the present invention.
Figure 13 illustrates the method for preparing lighting module.
Figure 14 explanation is used to use any lighting module described herein to serve client's method.
Provide support the herein explanation of another embodiment of proposing of Figure 15 A-15C.
Embodiment
Proposition herein generally comprises substrate plate (base panel) and directly is attached to the lighting module of a plurality of light-emitting diodes (LED) chip of substrate plate.Introduce each embodiment of this universal.In addition, introduction prepares the method for lighting module and the system component of lighting module.The embodiment that provides is provided reference diagram, wherein, and the identical or functionally similar element of the general expression of similar reference number.Equally, the Far Left of each reference number numeral is general corresponding to the figure that uses this reference number first.Although customized configuration and layout are discussed, are should be appreciated that to do so only to be used for illustration purpose.Various equivalent modifications should be recognized, can use other configurations and layout under the situation of the spirit and scope that do not depart from claims.
Fig. 1 is the schematic diagram according to the lighting module 100 of an embodiment who proposes herein.Lighting module 100 comprises the array that is arranged in the led chip 110 on substrate or the substrate plate 111.Led chip 110 directly is attached to substrate plate 111.As used herein, term " directly attached " means and broadly represents adhesion or other the attached and baseless encapsulation of led chip to substrate.In one embodiment, led chip 110 uses the gluing substrate plate 111 that is incorporated into that is full of Ag.Other technologies can be used for led chip 110 directly is attached to substrate plate 111.For example, led chip 110 can use the eutectic welding directly to be attached to substrate plate 111.
In the embodiment shown, led chip 110 is electrically coupled to first and second conductive traces 112 and 114 in the parallel circuits.Although at led chip shown in the parallel circuits 110, those skilled in the art will know how to arrange led chip 110 easily in the equivalent series circuit.As shown in fig. 1, led chip 110 directly is attached to the substrate plate 111 that contacts with first conductive trace 112, and is electrically coupled to second conductive trace 114 by wire-bonded (wire bond) 120.So first and second conductive traces 112,114 are coupled to from the current regulator 130 of power supply 140 received powers.Power supply 140 is AC power supplies typically.AC power from power supply 140 converts the DC electric current at current regulator 130 places then.It will be appreciated by those skilled in the art that term " power source " means any device that broadly expression is used for carrying to led chip necessary curtage as used herein.Like this, suitable power source can be single DC power supply or with the AC power supplies of AC/DC transducer and/or current regulator combination.
Current regulator 130, power supply 140 and conductive trace 112,114 and equivalent structure as by make the magnitude of current that is transported to lighting module 100 bind (capping) carry derate (de-rated) electric currents and the device of reliable low-noise current be provided to led chip 110.In one embodiment, for example, current regulator 130 is designed to provide the electric current that is low to moderate 0.050 ampere, and wherein the noise variation is not more than about 0.010 ampere.Can use the substitute equivalent structure, final result is to produce to have the circuit that is electrically coupled to a plurality of led chips 110 that power source is connected with cathode/anode.
Led chip 110 generally is little low-power led chip.For example, led chip 110 can be as small as about 260 μ m, and wide * about 450 μ m are long, and have the rated current of about 20mA, wherein the about 3.2V of forward voltage.In alternate embodiment, led chip 110 can be greatly to about 500 μ m wide * about 500 μ m are long, and have the rated current of about 88mA and the forward voltage of about 3.2V.
In one embodiment, substrate plate 111 is the printed circuit board (PCB)s (PCB) with conductive trace 112 and 114.With known, various substrates can be with acting on the device of keeping a plurality of led chips as those skilled in the art.The required attribute of lighting module is partly depended in the selection of backing material, and more specifically depends on and will accommodate the illumination application of lighting module and/or the topology requirement of illuminating equipment.For example, the ceramic substrate that may need electric insulation is used in an illumination, may need heat-conducting metal or ceramic substrate and substitute the illumination application.In addition, the thickness of substrate can be conditioned at application-specific.Example substrate comprises aluminium foil, anodised aluminium, metal armouring printed circuit board (PCB), aluminium nitride and various other metals or ceramic substrate.Alternate embodiment comprises the coating on the substrate.For example, in one embodiment, substrate can have the anodised aluminium of dielectric layer to form by top coating.Dielectric layer can be Al 2O 3Anodization layer (anodized layer).In substituting enforcement, substrate can be coated with polymeric dielectric.Polymeric dielectric can be to be filled with such as Al 2O 3, SiO 2Or TiO 2The silicones of ceramic particle.In another embodiment, substrate can be coated with TiO 2Embedded silicones.
In one embodiment, according to specific packing density, substrate plate 111 is filled with led chip 110.With tend to use the LED lighting module commonly used of smallest number high power package LED opposite, the lighting module of Ti Chuing solves the light and heat problem by the low-power led chip that adopts the relatively large number amount herein.Led chip directly is attached to substrate plate and by carrying " derate " electric current to power to led chip.The derate of chip is kept general low total operating temperature thus and is increased the delivery efficiency of independent chip.
The packing density of lighting module 100 (pack-density) is considered: only when convection current and radiation are considered to thermal losses mechanism, have restriction for the heat input of given area (and temperature rising).In other words, substrate plate 111 can be filled with led chip 110 according to maximum heat flux or the input of per unit area heat.In one embodiment, for example, packing density is according to following mathematical relationship:
Figure 924908DEST_PATH_IMAGE001
。
For for example 60 ℃ maximum plate temperature (T b) and for example 20 ℃ constant environment temperature (T o), per unit area heat input (Q/A) and the dexter radiation and the convection current of this equation balance left-hand side.At equational radiant section, symbol be σ (Si Taifan Boltzmann constant (Stefan-Boltzman constant)) and ε (emissivity, it is constant and is assumed to be 0.5 arbitrarily; Perhaps be set to 1) for black matrix.At equational convection part, symbol h AirBe convection coefficient and be assumed to be constant and be chosen as 15 W/m arbitrarily 2K(but can be from 10-100 W/m 2K changes).
Above-mentioned analysis only is an example, because it too simplifies and depend on the arbitrary value of emissivity and contracurrent system.Yet above-mentioned analysis allows the estimation of per unit area maximum heat input as design guidance.For example, per unit area heat input (Q/A) can be about 0.5 W/in 2In alternate embodiment, per unit area heat input (Q/A) can be distributed in from about 0.1W/in 2To about 0.7W/in 2Scope in.So the maximum chip-count of per unit area " is fixed " in this estimation, as the words of fruit chip with its rated current driving.By using less chip and reducing to be used for the drive current of each chip, more chip can be placed on the given area, and does not have the plate temperature of increase.For example, typical 1mm " high power " chip is at the forward voltage (V of about 3.2V f) under the situation with the forward current rating operation of 350mA, cause the input power of 1.12W.Typically, the 1mm chip is effective at this forward current about 20%, so about 0.9W must be as the dissipation of heat.From top analysis, this chip requires about 1.8 in 2Come by convection current and the radiation heat that dissipates, and 60 ℃ of confinement plate Wen Weiyue thus.(as side effect, slave plate has about 10-20 ℃ additional temp to led chip and rises, and makes the actual temperature of chip (be called junction temperature (T i)) rise to about 70-80 ℃).Thereby the packing density of 1mm chip is about per 1.8 in 21 chip.Use 0.5 mm " low-power " chip, and the derate forward current causes every chip heat input of about 0.14 W to about 45mA.Use the low-power chip to make admissible packing density be increased to 4 chips approximately per square inch.Net effect is the lighting module (per two square inches of 8 chips are to per two square inches of 1 chips) with how independent light source.In addition, this lighting module does not need the auxiliary heat dissipation technology.
Adopt in the method that above-mentioned analysis for example can provide in Figure 13.Figure 13 illustrates that preparation has the method 1300 of lighting module of substrate plate and a plurality of led chips, and wherein, this lighting module is designed to have and is lower than 60 ℃ operating temperature.Method 1300 starts from step 1301, wherein, calculates the input of per unit area heat according to radiation and convection current.In step 1303,, calculate the heat input of led chip based on the forward current rating of led chip.In step 1305, led chip directly is attached to substrate plate.In step 1307, carry the derate electric current to a plurality of chips.
In alternate embodiment, according to specific lumen Density Metric, substrate plate 111 is filled with led chip.As used herein, " lumen Density Metric " is abbreviated as LD and is defined as:
Figure 842048DEST_PATH_IMAGE002
A wherein bBe the area of substrate plate, A hBe always to flow area, A EmBe emission area (that is, the size of chip multiply by the sum of chip), L is a lumen, and LPW is every watt of a lumen.In one exemplary embodiment, provide lighting module with 25 led chips that directly are attached to about 4 inches * 4 inches substrate plate.Each led chip is about 500 μ m * 500 μ m, have the forward voltage of about 3.2+/-0.3 volt and about 0.080+/-rated current of .010 ampere.This lighting module is estimated as has about 2.9 * 10 6Lumen square every area watt (lumens squared per area watt) (lm 2/ mm 2W) LD.Contrast ground, the inventor estimates that the prior art lighting module has less than about 1.0 * 10 6Lm 2/ mm 2The LD of W.For example, the LCD backlight module is estimated as and has about 7.0 * 10 5-8.1 * 10 5Lm 2/ mm 2The LD of W.The OSTAR LE W E3B lighting module that OSRAM optoelectronic semiconductor company sells has about 1,500 lm 2/ mm 2The estimation LD of W.Be used for the comparison purpose, than the lumen Density Metric of the estimation that is used for each prior art lighting module, following chart outlines the lumen Density Metric of the estimation of above-mentioned exemplary embodiment.
Figure 497152DEST_PATH_IMAGE003
Fig. 2 illustrates the end view according to the lighting module 200 of an embodiment.As shown in Figure 2, a plurality of led chip 110 directly is attached to substrate plate 111 and does not have standard LED encapsulation.Led chip 110 is via wire-bonded 120 and conductive trace (not shown) telecommunication.Although show the wire-bonded technology, electric coupling led chip 110 is in those skilled in the art's the scope to other means that anode/cathode connects.For example, alternate embodiment can use " upside-down mounting (flip-chip) " technology to carry electric current to led chip.
Lighting module 200 comprises that separator unit 230 is with from diffusing panel 240 spacer substrate plates 111.Diffusing panel 240 is as the device of diffusion from the light of a plurality of led chip 110 emissions.Like this, the beholder of lighting module 200 cannot see the chip array of pixel shape, but sees uniform light source.Diffusing panel 240 can also have embedding phosphor wherein, makes that diffusing panel 240 interior phosphors convert indigo plant/UV light to white light when using indigo plant/UV led chip.In one embodiment, diffusing panel 240 can be coated with phosphor or phosphor blends.Alternatively, diffusing panel 240 can be put and be embroidered with phosphor or phosphor blends.
Fig. 3 illustrates the part end view that substitutes lighting module layout 300.As shown in Figure 3, led chip 110 directly is attached to substrate plate 111.Led chip 110 can be indigo plant/UV led chip.Cover led chip 110 by the coating/material 301 that mixes with phosphor, so can convert white light to from the light of led chip 110 emissions.In the embodiment shown, coating 301 has " bubble " form that covers led chip 110.In alternate embodiment, coating 301 can cover the surperficial or a part of of led chip 110 simply.
Fig. 4 illustrates the part end view that substitutes lighting module layout 400.As shown in Figure 4, led chip 110 directly is attached to substrate plate 111.Led chip 110 can be indigo plant/UV led chip.Arrive substrate plate 111 by the dome 401 that directly attached phosphor mixes above led chip 110, so can convert white light to from the light of led chip 110 emissions.
Fig. 5 illustrates the part end view that substitutes lighting module layout 500.Fig. 6 illustrates lighting module and arranges 500 partial plan.Led chip 110 directly is attached to substrate plate 111, makes led chip 110 via wire-bonded 120 and first and second conductive traces, 112,114 telecommunications.Light cup 501 is attached to substrate plate 111 then with around led chip 110.Light cup 501 is formed by the inner surface 505 of upwardly extending peripheral wall 504 and inclination.In one embodiment, light cup 501 is coated with reflectance coating on inner surface 505.In alternate embodiment, light cup 501 can be formed to avoid the needs of reflectance coating by reflecting material itself.Light cup 501 also comprises port area 530.Light cup 501 and equivalent structure are as being redirected from the device of the light of led chip 110 emissions.As discussed below, Figure 10,11A and 11B illustrate each view of instead of optical cup 501 and 1101 respectively.
Fig. 7 illustrates the part end view that substitutes lighting module layout 700.Led chip 110 directly is attached to substrate plate 111.Light cup 501 is installed on the substrate plate 111, with around led chip 110.In the embodiment shown in Fig. 7, at least one transparent material layer is arranged in the light cup 501.For example, first silicone layer 702 is arranged in led chip 110 tops.As shown, so second silicone layer 704 can be applied to first silicone layer, 702 tops.If adopt indigo plant/UV LED, this layer can be used for using phosphor to convert white light to from the light of led chip 110 emissions.
Fig. 8 illustrates the part end view that substitutes lighting module layout 800.As shown in Figure 8, led chip 110 directly is attached to substrate plate 111.Light cup 501 is around led chip 110.CD 801 is arranged in the light cup 501.CD 801 can be used for converting the light from led chip 110 emissions to white light.For example, CD 801 can be that phosphor mixes, thereby will convert white light to from the light of indigo plant/UV led chip 110 emissions.Like this, CD 801 and equivalent structure are as the device of the remote phosphors conversion of the light of launching from led chip.Alternatively, silicones or adhesive are arranged in the zone 802 between CD 801 and the led chip 110.
Fig. 9 shows the end view that is arranged in the CD 801 in the light cup 501.CD 801 comprises lower surface 904 and upper surface 905.Down and/or upper surface the 904, the 905th, taper, make the middle section of CD 801 have the width bigger than the width 910 of the circumferential surface 909 of CD 801.Surface 904,905 can be modified to convex surface, plano-concave or half moon-shaped.CD 801 also can be that phosphor mixes, and thus serves as from the device of the remote phosphors conversion of the light of led chip emission.In operation, cross CD 801, make each ray have similar substantially path through CD 801 from the light ray transmission of led chip 110; Preferably, path does not differ by more than one of percentage.
CD 801 is designed to change indigo plant/UV light equably on the surf zone of dish.Phosphor generally is used for converting indigo plant/UV light to white light.The amount of transfer process and especially indigo plant/interactional phosphor of UV light is determined the efficient of light extraction.If use phosphor very little, then the light of gained has than small throughput, and has non-switched substantially indigo plant/UV light, and this has reduced the gross efficiency of transfer process.If use too many phosphor, the light of conversion will be too yellow.In addition, the light from standard surface emission indigo plant/UV led chip is transmitted in all directions also inequality.For example, light intensity reaches peak value in direction.If led chip is by the encapsulation of the phosphor of uniform thickness, then the light of gained is with inhomogeneous white.This effect is common in the packaged LED that commerce can be buied.The shape of CD 801 addresses this problem.
For example, the shape of CD 801 can be configured, and makes that the absorption path-length of indigo plant/UV light is approximately equal in all directions.The CD 801 of uneven gauge causes relative uniform white light distribution, better color control and/or the higher gross efficiency of led chip 110.With reference to figure 9, the size of consideration is: the end thickness 910 of CD 801; The internal height 920 of light cup 501; The diameter 930 of CD 801; The central opening diameter 940 of light cup 501; Led chip height (unnumbered); LED width (unnumbered); And/or the radius of curvature of CD 801 (unnumbered).The phosphor of CD 801 loads can be between 0.5 percentage by weight and 10 percentage by weights.In one embodiment, CD 801 is the liquid silicone rubber that phosphor mixes, such as LSR-70.
Figure 10 illustrates the perspective view of light cup 501.As shown in Figure 10, light cup 501 comprises central opening 1007.When light cup 501 is glued to substrate plate 111, can on the lower surface 1011 of light cup 501, form bubble.Figure 11 A illustrates the perspective top view of instead of optical cup 1101.Figure 11 B illustrates the perspective bottom view of light cup 1101.At least one otch 1112 forms along the peripheral wall 1104 of cup 1101, forms leg 1103.Otch 1112 allows air flows and cup 1101 is ventilated.Like this, in light cup 110 times, bubble is constant tapered.The device that the structure of light cup 1101 forms as bubble on the basal surface that minimizes the light cup.
Phosphor
As mentioned above, as illumination use neededly, in order to produce white light, can adopt indigo plant/UV led chip with the combination of phosphors ground in the light path that is arranged in led chip.From the indigo plant/UV light stimulus phosphor of led chip emission, and the cumulative effect of the light of emission and phosphor excitation produces white light.Can adopt some indigo plants/UV led chip and combination of phosphors.The die/phosphor that adopts in any embodiment that can provide herein combination is provided below.The combination that provides only is example and is not exhaustive.Other combinations are in those skilled in the art's the scope.For example, whole U.S. Patent No. 7,224,000 and 7,176 incorporated herein by reference, 502 disclose other chips and combination of phosphors.
For example, can use the phosphor of blue LED and the yellow YAG:Ce of emission in one exemplary embodiment.In alternate embodiment, can adopt following combination: blue led chip and TAG:Ce phosphor; Launch led chip (from the about 230-270nm emission) Y red of dark UV with emission 2O 3: the Eu phosphor; Launch the led chip of dark UV and the La (PO of transmitting green 4): Ce or (Ce, Tb) MgAl xO y: Ce, Tb or ZnSiO 4: the Mn phosphor; Launch led chip and the blue BaMg of emission of dark UV xAl yO z: Eu or Sr (Cl) (PO 4) 3: the Eu phosphor.In alternate embodiment, mix mutually to produce white light from the blue light of blue led chip and green, yellow and red-emitting phosphor emission.Phosphor layer finish have yellow and red composition emission spectrum to produce the white light of desired colour temperature.
The granular size that is used for the phosphor of LED light stimulus typically is in the scope of about 1-10 micron.Also can adopt granular size greater than 10 microns.Scattering is owing to becoming stronger and increasing the amount of the blue light of reflected back chip than small particle size, have quantum efficiency additional complicated of reduction small size (for example nanometer) phosphor.Phosphor coating thickness typically is in the scope of 5-100 micron, and preferably is between the 10-30 micron.This scope depends on catalyst concn and the CCT that influences in the amount of the blue light that directly is subjected to non-absorption and the desired result aspect the CRI of each composition of granular size and use.
Method
Figure 12 illustrates explanation and makes the flow chart of the method 1200 of lighting module according to an embodiment of the invention.Method 1200 starts from step 1201, wherein led chip directly be attached on the substrate plate with the conductive trace telecommunication.In step 1203, around each led chip, the light cup is attached to plate.In step 1205, the light cup is filled with limpid silicones or silicones phosphor blends.In alternate embodiment, replace or except with the limpid silicone compound filling light cup, the CD as shown in Fig. 8 and 9 can be arranged in the light cup.
Figure 14 illustrates explanation and uses any lighting module described herein to serve the flow chart of client's method 1400.In step 1401, make lighting module according to one of said structure embodiment.Lighting module is filled with first and second groups of led chips.In step 1403, to first group of led chip power supply.Second group of led chip set up, and makes second group not activate with first group.The second core assembly sheet only just is activated when the first chip array fault or when blowing.In step 1405, service routine (servicer) is forbidden first group of led chip and second group of led chip is powered.The manufacturer of selling this system can provide a kind of system that " two life-span " is provided effectively thus, because when first group of led chip fault, service routine can activate second group of led chip and need not to replace total system.The second core assembly sheet can also be used as emergency lighting system when the first core assembly sheet chance failure.
Industrial usability
In operation, the lighting module that herein proposes can be distributed and sell to being used for the LED lamp that general lighting is used.Can adopt attachment arrangement or other attachment arrangements lighting module to be attached to any given illuminating equipment that is used for any given illumination application such as bolt, screw, anchor clamps, glue, rivet.
Example
Following paragraph is as the example of said system.Unless explicit state, the example that provides are prophesy property examples.
Example 1
In one example, lighting module is equipped with a plurality of rectangle led chips (260 μ m * 450 μ m) that are attached to substrate plate.Led chip generally has the rated current of about 20mA and the forward voltage of about 3.2V.In operation, the forward current of 14mA (derate electric current) is transported to led chip.Like this, every chip input power is about 0.064W.The design packing density that is used for this example is about 4 chips per square inch.The plate temperature of this example is about 56 ℃.Because with the reduced-current chip for driving, because the efficient of led chip increases with reducing electric current, this example also has the attendant advantages of the chip efficient of increase.For example, be about 30%(promptly with the efficient of the 260 μ m * 450 μ m chips of the derate current drives of 14mA, 30% of input power converts light to, and remaining 70% is heat), and the efficient of the identical chips that drives with its rated current of 20mA is about 27%.Like this, by the derate chip, reduced heat by the input power that reduces and higher efficient.
Example 2
In another example, lighting module is equipped with a plurality of square LED chips (500 μ m * 500 μ m) that are attached to substrate plate.Led chip generally has the rated current of about 150mA and the forward voltage of about 3.2V.In operation, with the derate current drives chip of about 45mA.The design packing density of this lighting module is about 1 chip per square inch.
Example 3
In another example, lighting module is equipped with 63 led chip tube cores joining printed circuit board (PCB) to (7 chips of 9 row) separately equally, i.e..The reverberation cup is arranged in around each chip then and is filled with the silicones (that is the phosphor of 1-2 percentage by weight) that loads phosphor.The CD of moulding is arranged in light cup top then.Dish be designed to be suitable in the cup and not contact lead-wire engage or chip.In alternate embodiment, in each light cup, arrange two or more led chips.
This lighting module has made up chip on board (COB(chip-on-board)) light extraction of the hot advantage of LED structure and the enhancing of the discrete LED structure of encapsulation, with formation 2D led array lighting module.Lighting module makes up with the 2D array chip tube core that joins the printed circuit board (PCB) with light cup, silicones, phosphor converted and optical device constructed around independent chip to.
Example 4
Following form is provided for the sample size and the specification of CD 801 and light cup 501.
Figure 892361DEST_PATH_IMAGE004
Example 5
Provide support the herein explanation of another embodiment of proposing of Figure 15 A-15C.Particularly, the iterative step of Figure 15 A-15C explanation preparation lighting module 1500.At first, provide substrate plate 1511.Substrate plate 1511 can be a printed circuit board (PCB), all aluminium sheets that has the insulating barrier of arranging in this way on a surface.Conductive trace 1512 is applied on the insulating barrier.As shown in Figure 15 A, conductive trace 112,114 parts that conductive trace 1512 is different from Fig. 1 are that conductive trace 1512 presents the series circuit that is used for carrying to led chip electric current.Be provided for conductive trace 1512 is electrically connected to the lead 1530 of surface-mount connector (not shown).Surface-mount connector is connected to the power source that is used for carrying to conductive trace 1512 electric current then.Power source can be the DC power supply or with the AC power supplies of AC/DC transducer and/or current regulator combination.
As shown in Figure 15 B, substrate plate 1511 is coated with mask 1540(promptly, solder mask).Mask 1540 comprises that a plurality of openings 1542 are to expose the necessary part of conductive trace 1512.In other words, mask 1540 is used to cover the part that does not need the conductive trace 1512 that exposes.As shown in Figure 15 C, led chip 110 is fixed to the tube core engaging zones 1550 of conductive trace 1512 then.Circuit is then by wire-bonded 1560 closures between independent led chip 110 and the contiguous conductive trace 1512. Light cup 501,1101 set forth above and/or CD 801 can be adhered to lighting module 1500.
In the example that proposes, lighting module 1500 comprises that size is 25 led chips of about 500 μ m * about 500 μ m.The electric current of about 50mA is transported to lighting module 1500, voltage be about 80+/-7.5V.Therefore, each chip forward current of receiving about 50mA and about 3.2+/-forward voltage of 0.3V.If lighting module 1500 is arranged in parallel, then 25 led chips need be shared the voltage of about 3.2V and the forward current of about 1.25A among chip.General and the nearest about separately 18mm of led chip of each led chip.
Conclusion
Should be understood that, describe part in detail but not summary of the present invention, example and abstract part are intended to be used to explain claim.Summary of the present invention, example and abstract part can be illustrated one or more but the non-whole exemplary embodiment of the present invention as (a plurality of) inventor expection, and thereby and are not intended to and limit the present invention and claims in any way.
Therefore the foregoing description of specific embodiment will disclose general aspects of the present invention fully, by using the knowledge in the present technique field, following in the situation that does not depart from universal of the present invention, other staff need not excessive experiment just can revise and/or adapt to these specific embodiments easily at various application.Therefore, based on the instruction and the guide that propose herein, this adaptation and modification are intended to be in the meaning and scope of equivalence of disclosed embodiment.Should be appreciated that herein word or term are used for describing and unrestricted purpose, make that term of this specification or word can be explained by the technical staff according to instruction and guidance.
Width of the present invention and scope should not be subject to any above-mentioned exemplary embodiment, and should only limit according to following claim and equivalence thereof.

Claims (11)

1. light cup that uses in lighting module comprises:
Lower surface;
From the upwardly extending peripheral wall of lower surface;
Port area along peripheral wall formation; And
From what port area extended to lower surface the angle inner surface arranged, thereby form the central opening in the light cup.
2. light cup according to claim 1 also includes the reflectance coating on the angle inner surface.
3. light cup according to claim 1 also comprises at least one incision tract in the peripheral wall.
4. light cup according to claim 1 also comprises three incision tract in the peripheral wall.
5. light cup according to claim 1 comprises that also the formation that is used for when the light cup is attached to substrate from the lower surface of light cup eliminates the device of bubble.
6. light cup according to claim 1 also is included in the CD that contiguous port area is arranged in the light cup.
7. light cup according to claim 1 also comprises the device that is used for the light from the light-emitting diode chip for backlight unit emission is converted to white light.
8. light cup according to claim 1 also comprises the device that is used to influence from the light of light-emitting diode chip for backlight unit emission.
9. light cup according to claim 1, wherein the central opening of light cup has the diameter of about 1.0mm.
10. light cup according to claim 1, wherein the height of light cup is about 1.7mm.
11. a lighting module comprises:
Substrate plate:
Light-emitting diode chip for backlight unit, its directly be attached to substrate plate and with substrate plate on the conductive trace telecommunication, this light-emitting diode emission light wherein;
Light cup around light-emitting diode chip for backlight unit; And
Be used to influence device from the light of light-emitting diode chip for backlight unit emission.
CN2009801362539A 2008-09-16 2009-08-24 Optical cup for lighting module Pending CN102160201A (en)

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