CN102157926A - Pressure limited protection circuit - Google Patents
Pressure limited protection circuit Download PDFInfo
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- CN102157926A CN102157926A CN2011100793546A CN201110079354A CN102157926A CN 102157926 A CN102157926 A CN 102157926A CN 2011100793546 A CN2011100793546 A CN 2011100793546A CN 201110079354 A CN201110079354 A CN 201110079354A CN 102157926 A CN102157926 A CN 102157926A
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Abstract
The invention provides a pressure limited protection circuit, which can be applied to an alternating current environment to reduce static power consumption of a system, reduce the current of a substrate and remove latch effect. The protection circuit provided by the invention comprises a primary voltage detection circuit of which the static current is zero basically, a large current discharge pathway which is used for discharging and providing a charge discharge pathway in the presence of amplitude limiting, two auxiliary substrate transistors which are used for removing substrate current, reducing leakage current and ensuring normal and stable work of the circuit when the substrates of all P type field effect transistors in a correct biasing circuit of alternating current environment are in the highest electric potential; in addition, in order to improve the sensitivity of the pressure limited protection circuit, the circuit further can comprise an operational amplifier circuit.
Description
Technical field
The present invention relates to the microelectronic integrated circuit field, be specifically related to a voltage-limiting protection circuit, have the advantages that quiescent dissipation is low, highly sensitive and technological requirement is low, especially be fit to be integrated on the such alternating current circuit System on Chip/SoC of wireless energy supply.
Background technology
In the operational environment of mains voltage variations, the integrated voltage-limiting protection circuit of general meeting in the chip is used for playing the effect of protection chip when supply voltage is withstand voltage above chip.
Going up integrated voltage-limiting protection circuit for existing, mainly is at DC environment, i.e. the variation of supply voltage more than zero potential.Structure commonly used has other common pressure limiting structure of the series connection, Zener diode of general-purpose diode and some.General-purpose diode is owing to the characteristic of itself, and the voltage-current curve slope is less, and protective capability is limited; Zener diode has good voltage-current characteristic, and the characteristic curve slope is very high, and can be useful on communication environment, but need to adopt special technology, increased the technology cost, and this does not wish in some designs to see, as adopting whole CMOS technology; Other pressure limiting structure; a kind of voltage-limiting protection structure of in document A Low Transponder IC for High-Performance Identification Systems, mentioning such as Ulrich Kaiser and Wolfgang Steinhagen; in general DC environment, can work; but sensitivity is not high; protective capability is limited, the more important thing is when being used for communication environment, has very big substrate leakage current; can cause latch-up (latch-up), cause the chip cisco unity malfunction.
A kind of substrate switching technology (the technique of bulk commutation) that arrives at the document A of Pierre Favart, Philippe Deval and Declercq high-Efficiency CMOS Voltage Doubler, can be in communication environment big substrate leakage flow problem.This technology can be promoted and be used for the voltage-limiting protection circuit, can play good effect, and can use widely.
Summary of the invention
A kind of voltage-limiting protection circuit provided by the invention is characterized in that: comprise a voltage detecting circuit, and an operational amplifier, switching tube and two substrate auxiliary transistors by by-pass current adopt common CMOS technology to realize.
Among the present invention, voltage detecting circuit, the relative current potential size at detection supply voltage two ends is exported a detection signal and is delivered to operational amplifier; Operational amplifier is by the voltage signal that relatively detects and preestablish voltage signal, controls the Kai Heguan by the switching tube of by-pass current; Two substrate auxiliary transistors, under the situation of mains voltage variations, dynamic bias by-pass switch pipe and the substrate of self make it be biased in high level or other appropriate level all the time, and then eliminate substrate current.
Ac voltage detection circuit among the present invention has the little characteristics of quiescent current.Do not reach the protection voltage threshold at supply voltage, quiescent current is 0.When supply voltage surpasses the protection threshold value, ac voltage detection circuit is started working, and the quiescent current of its consumption simultaneously is very little also.The high problem of quiescent dissipation when having overcome traditional employing electric resistance partial pressure structure like this.
By-pass switch pipe among the present invention and since the operational amplifier that adopts high-gain as a comparison device control it and open and close, therefore have very high sensitivity, switch motion faster can better play a protective role.
The substrate or the trap of the by-pass switch pipe among the present invention, be that substrate or trap with two auxiliary transistors connects together, switch motion by two switching tubes of dynamic control, can fine realization substrate or the reasonable biasing of trap, and then eliminated the big leakage current that ordinary construction exists and the latch-up (latch-up) that causes overcome problem of unstable in communication environment.
A kind of voltage-limiting protection circuit provided by the invention, its characteristics are: adopt new voltage detecting structure, have the low advantage of quiescent dissipation; Adopt the operational amplifier control by-pass current switching tube of high-gain, have highly sensitive advantage; Adopt the substrate switching technology, can eliminate the problem of circuit big substrate leakage current in communication environment, have the little advantage of leakage current; Adopt whole CMOS technology to realize, it is low to have a technology cost, the advantage that realization property is high.
A kind of voltage-limiting protection circuit provided by the invention, can be good be applied to are particularly suitable for biologic medical fields such as picture wireless energy supply system and capsule endoscope system in the system configuration in the alternating current-direct current environment, and this structure can well be integrated on the sheet.
Description of drawings
Fig. 1 is the structural representation of a kind of voltage-limiting protection circuit provided by the present invention.
Fig. 2 is the voltage detecting circuit specific implementation circuit diagram among Fig. 1.
Fig. 3 is switching tube and the substrate of auxiliary transistor realization or the principle schematic of trap switching technology;
Fig. 4 is a kind of circuit structure diagram of the specific embodiment of the invention.
Fig. 5 is another circuit structure diagram of the specific embodiment of the invention.
Figure 6 shows that a kind of application schematic diagram of the present invention at wireless energy supply system.
Embodiment
Because in the existing multi-reference voltage output circuit, external power source VDD directly provides voltage to the reference power supply recurring structure, so the fluctuation of VDD will cause the reference voltage fluctuation to a great extent, reduce the stability of reference voltage.For improving stability, the inventor proposes externally between the power vd D and reference power supply recurring structure power supply architecture to be set, be used to receive the voltage of external power source VDD, and output voltage offers described recurring structure, the power supply architecture of She Zhiing can play certain shielding action to the fluctuation of VDD like this, reduce the influence of VDD fluctuation to reference voltage stability.
Further specify the present invention below in conjunction with the drawings and specific embodiments
As shown in Figure 1, embodiments of the invention are by voltage detecting circuit 101, and operational amplifier (opamp) 102 and switching tube substrate or trap switched circuit 106 3 parts are formed.Wherein voltage detecting circuit 101 detects the relative potential difference of two terminals of supply voltage, judges and wants to carry out voltage-limiting protection; The Kai Heguan that output voltage and the comparison reference voltage 102 of operational amplifier (opamp) 105 by the comparative voltage testing circuit comes the control switch pipe.When voltage detecting circuit 101 output during greater than comparison reference voltage 102, operational amplifier (opamp) 105 output high level are opened switching tube, the big electric current that the overvoltage of releasing causes, otherwise off switch pipe then.So the size of switching tube is general bigger, this is relevant by the by-pass current value of setting.The bypass protection electric current of setting is big more, and the size of switching tube is also just big more.103 is the independent current source voltage terminal of operational amplifier, and 104 is the low level terminal of operational amplifier 105, and these two terminals can find suitable level to setover from subsequent conditioning circuit.
Shown in Figure 2 is used voltage detecting circuit among the present invention.Supply voltage is connected on two terminals 201 and 202, and both positive and negative polarity is any.First route resistance 203 and nmos pipe 204 are formed, wherein nmos pipe 204 is connected into the form that diode connects, its substrate is not to be directly connected on the terminal 202 of supply voltage, but be connected on the substrate of the switching tube substrate of back or trap switched circuit and they carry out the substrate biasing together.Second route pmos pipe 25 and resistance 206 are formed, and the grid of the grid of pmos pipe 205 and nmos pipe 204 connect together, and N trap substrate is connected on the power supply terminal 201.Output 207 is used for exporting detected voltage, delivers to the operational amplifier of back.When supply voltage did not reach the pressure limiting threshold value, two mos pipes 204 and 205 were all closed, and it is low level that output detects voltage; When supply voltage during greater than the pressure limiting threshold value, two mos pipes are all opened, and it is high level that output detects voltage.Resistance 203 and 204 value generally between 10～500K Ω, make and open the back quiescent current in μ A magnitude.The size of supply voltage when the size of mos pipe 204 and resistance 203 determine 205 unlatchings of mos pipe together.Mos pipe 205 and resistance 206 determine to detect the size of output voltage together.Said as the front, supply voltage is when setting the pressure limiting threshold value, and circuit is closed, and quiescent current is 0, opens the back quiescent current at several μ A, so have the little advantage of quiescent current.
Figure 3 shows that the substrate of switching tube and auxiliary transistor realization or the principle schematic of trap switching technology.Basic switch pipe pmos pipe 303 its substrate generally speaking is connected to the high potential terminal by the N trap, adopts substrate or trap switching technology here, realizes that the N trap of dynamic bias pmos pipe 303 is biased in high potential.The substrate and the switching tube 303 of two auxiliary pmos pipes 301 and 302 connect together, and are connected to their common source ends simultaneously.Supply voltage is connected on two terminals 301 and 302.Be example now with the AC sine wave, analyze the working condition of circuit under the interchange situation.Positive half period, 301 is high potential, and 301 is 0 current potential, and pmos pipe 304 is opened, and 305 close, and substrate is connected on the high potential of 301 ends by pmos pipe 304; Negative half-cycle, 301 is 0 level, and 302 is high level, and pmos pipe 305 is closed, and 304 open, and substrate is connected to by pmos pipe 305 on 302 the high level.By two auxiliary transistors 304 and 305, just can guarantee that under any supply voltage, N trap substrate is connected on the high level all the time, so just overcome the leakage problem under the biasing of stationary substrate or trap, eliminate latch-up (latch-up), overcome problem of unstable.The substrate of the mos pipe among voltage detecting Fig. 2 and trap and this part substrate and trap connect together, and can reduce its leakage current equally.Must notice that the mos pipe that connects together must be the mos pipe of same type, promptly be nmos pipe or pmos pipe entirely.
Fig. 4 is a kind of circuit structure diagram of the specific embodiment of the invention.Whole embodiment comprises voltage detecting circuit, operational amplifier and switching tube substrate or trap switched circuit.401 and 402 connect two inputs of supply voltage, and 403,404,405 and 406 form foregoing voltage detecting circuit.407 voltage sense signal are delivered to an input of operational amplifier 408, are generally positive input, the comparison reference voltage value that 409 inputs of another one negative input end are set, such as 1V.The high high potential of the supply voltage of operational amplifier connects 410,0 current potentials and connects 411, and these two level can obtain from subsequent conditioning circuit.The grid level of switching tube 412 connects the output of operational amplifier (opamp) 408, N trap substrate and two auxiliary switches 413 and 414 connect together, be connected in simultaneously on the 414 and 414 common drain terminals 515, the N trap substrate of nmos pipe 404 also with they connect together, be connected on 515. Auxiliary transistor 413 and 414 grid level are received respectively on two inputs 401 and 402 of supply voltage.
Now be input as example, the course of work of circuit in communication environment is described with sine wave.Might as well establish positive half period, 401 ends are high potential, and 402 is 0 current potential.401 positive potential is less than the pressure limiting threshold value of setting during beginning, and voltage detecting circuit is closed, and detecting voltage output end 407 is 0 current potential, and through operational amplifier (opamp) 408 outputs 0 current potential, switching tube 412 is closed, and the voltage-limiting protection circuit is not worked.Along with the increase of forward voltage, voltage detecting circuit is started working, and output 407 output voltages are also along with increase; when its comparison reference voltage greater than the input of 409 ends; operational amplifier (opamp) output high level, switching tube 412 is opened, and the voltage-limiting protection circuit is started working.By-pass current flows to 0 current potential 402 by 412, so just avoids other circuit of big current direction, plays the effect of voltage-limiting protection.Positive half period, auxiliary transistor 414 is opened, and 413 close, and substrate is connected to 402 0 level by 414, has only very little substrate leakage current.At negative half-cycle, 401 is 0 current potential, and 402 is high potential, and whole voltage-limiting protection circuit is not worked.Auxiliary transistor 413 is opened, and 414 close, and substrate is connected to 401 0 current potential by 413, also has only very little substrate leakage current.Want can both play the voltage-limiting protection effect, only two identical structure reverse parallel connections can need be realized two cycles, such one in positive half period work, another guarantees very little substrate leakage current simultaneously in negative half-cycle work.
Fig. 5 is another circuit structure diagram of the specific embodiment of the invention.Be that with the main distinction among Fig. 4 switching tube 512 adopts the pmos pipe, is aided with the current potential that two pmos transistors 513 and 514 are controlled the N trap.Positive half period, pmos pipe 513 is opened, and 514 close, and the N trap is biased on 501 the high potential; Negative half-cycle, pmos pipe 514 is opened, and 513 close, and the N trap is biased on 502 the high potential.By the Kai Heguan of these two auxiliary pmos pipes, make that the N trap always is biased on the high potential in positive and negative each half period.Outside it, also have a difference correspondent voltage testing circuit also to adopt complementary structure.The same with the principle among Fig. 4, the N trap of pmos transistor 503 also is to be connected to 515, realizes the dynamic bias of its N trap.The analysis of the concrete course of work of entire circuit and Fig. 4's is the same, skips over herein.
Figure 6 shows that a kind of application schematic diagram of the present invention at wireless energy supply system.The 605 reverse parallel connection structures that are depicted as two voltage-limiting protection circuit of the present invention among the figure.By resonant cavity excitation electromagnetic field under the excitation of E power-like amplifier 601 that resonant capacitance 602 and resonant inductance 603 are formed, realize the emission process of wireless energy.Receiving terminal resonant inductance 604 and resonant capacitance 605 change into ac signal with the energy of accepting.Ac signal changes into utilizable direct current by rectifier bridge 607 and filter capacitor 608.Generating galvanic current under the further modulation of voltage modulator 609 presses supply load 610 to use.Entire portion in the 611 expression frames can be integrated on the sheet, makes an IC.Because in the energy transfer process; the voltage signal of induction may be very high before the rectifier bridge 607, and when surpassing the withstand voltage of follow-up chip, the reverse parallel connection structure of two voltage-limiting protection circuit shown in 605 is started working; form the by-pass current path, play the effect of protection chip.
Patent of the present invention not only is confined to above-mentioned embodiment, and one of ordinary skill in the art can adopt other multiple embodiments to implement the present invention according to content disclosed by the invention.Therefore, every employing project organization of the present invention and thinking are done some simple designs that change or change, and all fall into protection scope of the present invention.
Claims (6)
1. a voltage-limiting protection circuit is characterized in that, this circuit comprises voltage detecting circuit, large-sized P transistor npn npn, substrate assisted bias circuit and optional operation amplifier circuit.
2. voltage-limiting protection circuit as claimed in claim 1 is characterized in that, owing to adopted preliminary voltage detecting circuit, can not open when supply voltage is lower than the pressure limiting threshold value, and its quiescent dissipation is zero.
3. voltage-limiting protection circuit as claimed in claim 1 is characterized in that, has adopted p type field effect transistor to provide power supply to arrive the direct charge discharging resisting path on ground, in order to improve the ability of leakage current, generally requires the size of this p type field effect transistor bigger.
4. voltage-limiting protection circuit as claimed in claim 1; it is characterized in that; the transistor that has comprised two additional substrate biasings; particularly the release transistorized substrate of path of p type field effect transistors all in the circuit is biased on the rational current potential dynamically; reduce substrate leakage currents, eliminated latch-up.
5. voltage-limiting protection circuit as claimed in claim 4 is characterized in that, this circuit not only can be directly used in general DC operation environment, can also be directly used in general communication environment.
6. voltage-limiting protection circuit as claimed in claim 1; it is characterized in that; in order to make circuit can be used in the better occasion of sensitivity; can in circuit, add operational amplifier; the supply voltage and the reference voltage that detect are compared; improve the transistorized opening speed of electric charge of releasing, improve the sensitivity of protective circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100793546A CN102157926A (en) | 2011-03-30 | 2011-03-30 | Pressure limited protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100793546A CN102157926A (en) | 2011-03-30 | 2011-03-30 | Pressure limited protection circuit |
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|---|---|
| CN102157926A true CN102157926A (en) | 2011-08-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011100793546A Pending CN102157926A (en) | 2011-03-30 | 2011-03-30 | Pressure limited protection circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103840820A (en) * | 2013-12-04 | 2014-06-04 | 中国航空工业集团公司第六三一研究所 | Active discharging mechanism of discrete magnitude port |
| TWI497855B (en) * | 2013-12-04 | 2015-08-21 | Ind Tech Res Inst | Leakage-current start-up reference circuit |
| CN107607583A (en) * | 2017-08-29 | 2018-01-19 | 广东美的厨房电器制造有限公司 | Humidity detector |
| CN110120660A (en) * | 2018-02-07 | 2019-08-13 | 联发科技股份有限公司 | Overvoltage/protecting energy device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020186518A1 (en) * | 2001-04-13 | 2002-12-12 | Mutsuo Nishikawa | Overvoltage protection circuit |
| CN101295928A (en) * | 2007-04-27 | 2008-10-29 | 精工电子有限公司 | Voltage regulator |
| US20100296210A1 (en) * | 2009-05-20 | 2010-11-25 | Ball Alan R | Transient suppression device and method therefor |
-
2011
- 2011-03-30 CN CN2011100793546A patent/CN102157926A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020186518A1 (en) * | 2001-04-13 | 2002-12-12 | Mutsuo Nishikawa | Overvoltage protection circuit |
| CN101295928A (en) * | 2007-04-27 | 2008-10-29 | 精工电子有限公司 | Voltage regulator |
| US20100296210A1 (en) * | 2009-05-20 | 2010-11-25 | Ball Alan R | Transient suppression device and method therefor |
Non-Patent Citations (1)
| Title |
|---|
| PIERRE FAVRAT，PHILIPPE DEVAL AND MICHEL J.DECLERCQ: "A High-Efficiency CMOS Voltage Doubler", 《IEEE JOURNAL OF SOLID-STATE CIRCUITS》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103840820A (en) * | 2013-12-04 | 2014-06-04 | 中国航空工业集团公司第六三一研究所 | Active discharging mechanism of discrete magnitude port |
| TWI497855B (en) * | 2013-12-04 | 2015-08-21 | Ind Tech Res Inst | Leakage-current start-up reference circuit |
| US9239586B2 (en) | 2013-12-04 | 2016-01-19 | Industrial Technology Research Institute | Leakage-current start-up reference circuit |
| CN107607583A (en) * | 2017-08-29 | 2018-01-19 | 广东美的厨房电器制造有限公司 | Humidity detector |
| CN107607583B (en) * | 2017-08-29 | 2020-08-04 | 广东美的厨房电器制造有限公司 | Humidity detection device |
| CN110120660A (en) * | 2018-02-07 | 2019-08-13 | 联发科技股份有限公司 | Overvoltage/protecting energy device |
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Application publication date: 20110817 |