CN102157883A - Terahertz transmitter based on surface plasma resonance - Google Patents
Terahertz transmitter based on surface plasma resonance Download PDFInfo
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- CN102157883A CN102157883A CN 201010596150 CN201010596150A CN102157883A CN 102157883 A CN102157883 A CN 102157883A CN 201010596150 CN201010596150 CN 201010596150 CN 201010596150 A CN201010596150 A CN 201010596150A CN 102157883 A CN102157883 A CN 102157883A
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Abstract
The invention relates to a terahertz transmitter based on surface plasma resonance, which comprises a gallium arsenide substrate. The terahertz transmitter is characterized in that both ends of one side face of the gallium arsenide substrate, facing to femtosecond laser pulses, are provided with positive and negative gold-plated films, a cylindrical metal rod for generating plasma resonance and a conical-head metal rod with a conical head are respectively arranged on both sides of the incidence direction of the femtosecond laser pulses, and a nano-grade or micron-grade gap is arranged between the conical head of the conical-head metal rod and the cylindrical metal rod.
Description
Technical field
The invention belongs to physics photoelectron technology field, particularly based on the terahertz transmitter of surface plasma body resonant vibration.
Background technology
Terahertz emission was familiar with by people in 19th century, still, owing to be subjected to the restriction of effective terahertz transmitter and sensitive detector, was blank for the research of terahertz wave band always, and this wave band is called as " Terahertz space ".In recent years, along with the development of the development of series of new techniques and new material, particularly ultrafast technology, make Terahertz become the focus of whole world research.2004, U.S. government Terahertz science and technology is chosen as ten big technology of future world " change " four, and also Terahertz Technology was classified as first of " national pillar ten big key strategy targets " in Japanese 2005, research and develop by national efforts.It has considerable brand-new application in fields such as explosive detection, biomedicine, tablet detection, space material, airport securitys at present.
Current, the most frequently used terahertz transmitter is the photoconductive antenna of band bias voltage, and it can be excited the terahertz emission in broadband by femtosecond laser.The most classical terahertz transmitter structure is plated with gold film on the GaAs of low-temperature epitaxy (being antenna), has the gap in the middle of this antenna, need add bias direct current voltage at antenna.When femtosecond laser impinges upon on the antenna gap, can produce photo-generated carrier, these photo-generated carriers quicken to produce terahertz emission under bias field.Usually need a silicon lens to improve the coupling efficiency of terahertz emission.This photoelectricity conduction Terahertz generator widespread is in tera-hertz spectra and imaging system, but it can only produce the terahertz emission of limited power, and this has just limited Terahertz Technology in some high-power application scenarios.
Summary of the invention
The object of the present invention is to provide a kind of terahertz transmitter based on surface plasma body resonant vibration, the present invention utilizes the principle of surface plasma body resonant vibration, can strengthen the intensity of incident femtosecond laser, thereby make the terahertz emission intensity that produces be enhanced, the present invention is fit to high-power Terahertz application scenario.
The invention is characterized in: a kind of terahertz transmitter based on surface plasma body resonant vibration, comprise the GaAs substrate, it is characterized in that: described GaAs substrate is provided with the positive and negative electrode gold coated films towards the two ends, a side of femto-second laser pulse, be respectively equipped with in the both sides of femto-second laser pulse incident direction and be used to produce the cylindrical metal bar of plasma resonance and have the conical head Metallic rod of conical nose, be provided with nanoscale or micron order gap between the conical nose of described conical head Metallic rod and the cylindrical metal bar.
The another side of aforesaid substrate is connected with the semispherical silicon lens.
Above-mentioned gold coated films is a butterfly surface gold-plating film.
The present invention is that the principle of utilizing the surface plasma body resonant vibration method to cause local electromagnetism to strengthen strengthens the intensity of incident femtosecond laser, thereby makes the terahertz emission intensity that produces be enhanced.
The present invention can be used for following two application:
1) under the same conditions, use terahertz transmitter of the present invention, can under the situation of using lower powered femto-second laser, obtain high-power femto-second laser obtainable terahertz emission on common terahertz transmitter, so just can save the expense of femto-second laser, thereby save the research and development expense of Terahertz great number;
2) need the application scenario of high power Terahertz at some, can use reflector of the present invention to improve terahertz emission power.
Description of drawings
Fig. 1 is the organigram of the embodiment of the invention.
Fig. 2 is the left TV structure schematic diagram of Fig. 1.
Fig. 3 is that the nanoscale awl-column type Metallic rod electric field of the embodiment of the invention strengthens characteristic.
Among the figure: 1 GaAs substrate; 2 butterfly type surface gold-plating film A; 3 butterfly type surface gold-plating film B; 4 dome-type silicon lens; 5 cylindrical metal bars; 6 conical head Metallic rod; 7 femtosecond lasers; 8 terahertz emissions.
Embodiment
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and conjunction with figs. are described in detail below.
With reference to figure 1 and Fig. 2, patent of the present invention comprises the GaAs based end (1), butterfly type surface gold-plating film A(2), butterfly type surface gold-plating film B(3), dome-type silicon lens (4), cylindrical metal bar (5) and have the conical head Metallic rod (6) of conical nose.Butterfly type surface gold-plating film A(2) and butterfly type surface gold-plating film B(3) form photoconductive antenna.Butterfly type surface gold-plating film A(2) connect dc power anode, butterfly type surface gold-plating film B(3) connect dc power cathode.Distinctive conical head Metallic rod of terahertz transmitter of the present invention (6) and cylindrical metal bar (5) and gap thereof can be nanoscale or micron-sized size, when femtosecond laser shines on the gap of this structure, can produce surface plasma resonance, strengthen the intensity of incident femtosecond laser.Femto-second laser pulse after the enhancing impinges upon at the GaAs based end (1), will produce the bigger photo-generated carrier of more energy, and these photo-generated carriers quicken to inspire more strong terahertz radiation under effect of electric field.Dome-type silicon lens (4) is in order to increase the coupling efficiency of terahertz emission.
The course of work of the present invention is roughly as follows:
When femto-second laser pulse impinges upon slit between conical head Metallic rod (6) and the cylindrical metal bar (5), owing to structurally produce surface plasma body resonant vibration, thus cause the intensity of incident femtosecond laser to be enhanced.Incident femtosecond laser after the enhancing impinges upon at the GaAs based end (1) will produce photo-generated carrier, at butterfly type surface gold-plating film A(2) and butterfly type surface gold-plating film B(3) bias field that produced of the added direct voltage of antenna formed makes these photo-generated carriers quicken, thereby the generation terahertz emission utilizes dome-type silicon lens (4) to improve the coupling efficiency of terahertz emission at last.
Conical head Metallic rod of the present invention (6) and cylindrical metal bar (5) can be nano level or micron-sized.Fig. 3 is the electric field enhancing that the nanoscale awl-column type metal structure of the embodiment of the invention causes owing to the generation surface plasma body resonant vibration.By analysis, if the diameter of cylindrical metal bar (5) and conical head Metallic rod (6) is 50 nanometers, the angle of awl point is 30 degree, and the gap between cylindrical metal bar (5) and the conical head Metallic rod (6) is 20 nanometers, and electric field strength can strengthen 164 times; As fruit structure is nano level, when the diameter with conical head Metallic rod (6) of cylindrical metal bar (5) is 10 microns, the angle of awl point is 30 degree, and the gap between cylindrical metal bar (5) and the conical head Metallic rod (6) is 2 microns, and electric field strength can strengthen 27 times.The enhancing of electric field (intensity enhancing of incident femtosecond laser) has improved the radiation intensity of Terahertz greatly.The high-power Terahertz application scenario that is fit to of the present invention.
The present invention does not limit to above-mentioned preferred forms, and anyone can draw other various forms of terahertz transmitter based on surface plasma body resonant vibration under enlightenment of the present invention.All equalizations of being done according to the present patent application claim change and modify, and all should belong to covering scope of the present invention.
Claims (3)
1. terahertz transmitter based on surface plasma body resonant vibration, comprise the GaAs substrate, it is characterized in that: described GaAs substrate is provided with the positive and negative electrode gold coated films towards the two ends, a side of femto-second laser pulse, be respectively equipped with in the both sides of femto-second laser pulse incident direction and be used to produce the cylindrical metal bar of plasma resonance and have the conical head Metallic rod of conical nose, be provided with nanoscale or micron order gap between the conical nose of described conical head Metallic rod and the cylindrical metal bar.
2. the terahertz transmitter based on surface plasma body resonant vibration according to claim 1 is characterized in that: the another side of described substrate is connected with the semispherical silicon lens.
3. the terahertz transmitter based on surface plasma body resonant vibration according to claim 1 is characterized in that: described gold coated films is a butterfly surface gold-plating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010596150 CN102157883A (en) | 2010-12-20 | 2010-12-20 | Terahertz transmitter based on surface plasma resonance |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010596150 CN102157883A (en) | 2010-12-20 | 2010-12-20 | Terahertz transmitter based on surface plasma resonance |
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| CN102157883A true CN102157883A (en) | 2011-08-17 |
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| CN 201010596150 Pending CN102157883A (en) | 2010-12-20 | 2010-12-20 | Terahertz transmitter based on surface plasma resonance |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106645015A (en) * | 2016-11-16 | 2017-05-10 | 上海理工大学 | TeraHertz wave super-resolution imaging system and method based on metal micro-nano structure |
| CN107329144A (en) * | 2017-08-16 | 2017-11-07 | 深圳市杰普特光电股份有限公司 | A kind of miniature laser range finder module and range unit |
| CN114295582A (en) * | 2021-12-29 | 2022-04-08 | 福州大学 | Polar liquid reflection type experiment system and measurement method thereof |
-
2010
- 2010-12-20 CN CN 201010596150 patent/CN102157883A/en active Pending
Non-Patent Citations (2)
| Title |
|---|
| 《Applied Physics Letters》 20040712 Y.C.Shen,etc Generation and detection of ultrabroadband terahertz radiation using photoconductive emitters and receivers 164-166 3 第85卷, 第2期 2 * |
| 《Progress In Electromagnetics Research Symposium Proceedings,Xi"an,China》 20100326 Shuncong Zhong，etc FDTD Study of a Novel Terahertz Emitter with Electrical Field Enhancement Using Surface Plasmon Resonance 181-184 1-3 , 2 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106645015A (en) * | 2016-11-16 | 2017-05-10 | 上海理工大学 | TeraHertz wave super-resolution imaging system and method based on metal micro-nano structure |
| CN107329144A (en) * | 2017-08-16 | 2017-11-07 | 深圳市杰普特光电股份有限公司 | A kind of miniature laser range finder module and range unit |
| CN114295582A (en) * | 2021-12-29 | 2022-04-08 | 福州大学 | Polar liquid reflection type experiment system and measurement method thereof |
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Application publication date: 20110817 |