CN102157684A - Resistive random access memory (RRAM) using carbon nano tube (CNT) as solid state electrolyte - Google Patents
Resistive random access memory (RRAM) using carbon nano tube (CNT) as solid state electrolyte Download PDFInfo
- Publication number
- CN102157684A CN102157684A CN2010105932663A CN201010593266A CN102157684A CN 102157684 A CN102157684 A CN 102157684A CN 2010105932663 A CN2010105932663 A CN 2010105932663A CN 201010593266 A CN201010593266 A CN 201010593266A CN 102157684 A CN102157684 A CN 102157684A
- Authority
- CN
- China
- Prior art keywords
- carbon nano
- tube
- cnt
- solid
- electrolytic solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a resistive random access memory (RRAM) using a carbon nano tube (CNT) as solid state electrolyte, comprising a lower electrode, an upper electrode, an insulating medium and a CNT, wherein the insulating medium is arranged between the lower electrode and the upper electrode and forms a restraint structure; the CNT grows in the restraint structure; the CNT is a single-walled CNT or multi-walled CNT; and an insulating film is made of silicon dioxide. The RRAM has the advantage that common sulfidic material is replaced by the CNT which is taken as the solid state electrolyte, so that metal ions and metal are restrained in the CNT, and connection and disconnection of an electricity-conducting channel take place in the intrinsic CNT, thereby exhibiting the diffusion of the metal and the metal ions, and effectively improving the controllability of the RRAM and the long holding capacity of the RRAM for data at high temperature. Meanwhile, because the sulfidic material with pollution is replaced by the CNT, thus the RRAM is compatible with a traditional silicon plane complementary metal oxide semiconductor (CMOS) technology, which is beneficial to popularization and application.
Description
Technical field
The present invention relates to electronics manufacturing and technical field of memory, particularly relate to the resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution with a kind of.
Background technology
Along with the needs to big capacity, low-power consumption storage such as multimedia application, mobile communication, non-volatility memorizer, particularly flash memory, the market share of shared semiconductor device becomes increasing, also more and more becomes a kind of considerable memory.The main feature of non-volatility memorizer is also can the long preservation canned data under situation about not powering up, and the characteristics of its existing read-only memory have very high access speed again.
Currently marketed non-volatility memorizer is main flow with the flash memory, but flush memory device exists that operating voltage is excessive, service speed slow, endurance is good inadequately and since during in institute's digestion process thin excessively tunnel oxide will cause shortcomings such as memory time is not long.Desirable non-volatility memorizer should possess that operating voltage is low, simple in structure, non-destructive reads, service speed is fast, memory time is long, device area is little, durable condition such as good.A lot of new materials and device are studied at present, attempt the target that reaches above-mentioned, wherein there is the novel storage component part of considerable part all to adopt the change of resistance value to be used as memory style, comprises the resistance-variable storing device of resistance-variable storing device and employing solid-state electrolytic solution material.
General solid electrolytic solution resistance change memory mainly is based on formation and the disappearance in solid-state electrolytic solution of metallic conduction bridge under the electric field action.Its operation principle is: electrode of metal A is oxidized into metal ion A under electric field action
+, metal ion A
+In solid-state electrolytic solution B, transmit, finally reach inertia bottom electrode C, at the metal ion A of bottom electrode C place
+Be reduced into and be metal A, along with metal constantly in bottom electrode C place deposition, finally reach top electrode A, form the metallic conduction bridge, device resistance is in low resistive state; Under the reversed electric field effect, this metallic conduction bridge disconnects, and device returns to great-great-grandfather's state.These two kinds of resistance states can be changed mutually in the effect of extra electric field.
But the present solid-state electrolytic solution material that proposes adopts sulfidic material usually, for example CuS, AG-Ge-Se, Ge-Se, ZnCdS, AgI and Cu-Ge-S or the like.The first, well-known, to be material make the CMOS technology of itself and standard not have a compatibility to the pollution of technology to these sulphur.The second, because poor heat stability has influenced the stability of the resistance states of device under hot environment, so weakened the hold facility of memory to data.The 3rd, because the metallic conduction bridge that forms quantitatively have great randomness, thereby this causes the fluctuation of device on voltage and current to influence the controllability of memory in size.
Summary of the invention
The objective of the invention is at above-mentioned existing problems, a kind of resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution is provided, this resistance-variable storing device utilizes carbon nano-tube as solid-state electrolytic solution, at first can overcome existing sulfide solid-state electrolytic solution resistance change memory and the incompatible problem of CMOS technology, secondly improve the stability of existing solid-state electrolytic solution resistance change memory resistance states under hot environment, raising is to the hold facility of data, can control the size and the quantity of metallic conduction bridge once more, improve the controllability of device.
Technical scheme of the present invention:
A kind of resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution, comprise bottom electrode, top electrode, dielectric and carbon nano-tube, dielectric is between bottom electrode and top electrode and form limiting structure (confined structure), carbon nano-tube in limiting structure; The material of described bottom electrode and top electrode is metal, the conductive compound of stable in properties under electric field action or the metal that is easy to be oxidized to metal ion under electric field action, but top electrode can not use the identical described electrode material of character simultaneously with bottom electrode; Described carbon nano-tube is Single Walled Carbon Nanotube or multi-walled carbon nano-tubes; The material of described insulation film is a silicon dioxide.
The thickness of described bottom electrode is 5nm～200nm.
The thickness of described top electrode is 5nm～200nm.
Described under electric field action the metal of stable in properties be platinum, iridium or ruthenium.
Described conductive compound is titanium oxide, ruthenium-oxide or tin indium oxide.
The described metal that is easy to be oxidized to metal ion under electric field action is copper, silver, iron, zinc or nickel.
The bore width that described dielectric forms limiting structure is 10nm～10um.
Described carbon nano-tube is P type Single Walled Carbon Nanotube, N type Single Walled Carbon Nanotube, single wall insulation carbon nano-tube, P type multi-walled carbon nano-tubes, N type multi-walled carbon nano-tubes or many walls insulation carbon nano-tube, and the diameter＞6nm of carbon nano-tube, length are 5nm～5um; Utilizing the length of the carbon nano-tube after CMP (Chemical Mechanical Polishing) process (CMP) polishing is 5nm～5um.
The thickness of described insulating film material silicon dioxide is 10nm～10um.
Working mechanism of the present invention:
In common solid-state electrolytic solution resistance change memory, electrode of metal is oxidized into metal ion A under electric field action
+, A
+Ion transmits in solid-state electrolytic solution B, finally reaches inertia bottom electrode C, at the A of C place
+Ion is reduced into and is metal A, along with metal A constantly deposits at the C place, finally reaches top electrode A, forms the metallic conduction bridge, and device resistance is in low resistive state.The metallic conduction bridge that this transformation forms quantitatively has great randomness in size.Thereby this causes the fluctuation of device on voltage and current to influence the controllability of memory.On the other hand, in the common solid-state electrolytic solution resistance change memory,, adopt the relatively more loose sulfidic material of structure usually as the solid-state electrolytic solution material in order to improve the mobility of metal ion.But the thermal stability of sulfidic material is relatively poor, and under hot conditions, metal ion and metal obtain heat energy easier moving in the relatively poor sulfidic material of thermal stability.When being in low resistance state, forming the metal acquisition heat energy that is communicated with top electrode and bottom electrode conducting bridge and tend to spread towards periphery.This causes being communicated with the disconnection of the metallic conduction bridge of top electrode and bottom electrode, and consequently the resistance of device changes high-impedance state into from low resistance state, has lost legacy data.Otherwise in like manner.Thereby influence the hold facility of memory to data.
Beneficial effect of the present invention:
Based on above consideration, the present invention improves the solid-state electrolytic solution resistance change stability of stored effectively by using carbon nano-tube as solid-state electrolytic solution material in the solid electrolytic solution resistance change memory, under controllability and the hot conditions to the hold facility of data.Carbon nano-tube has typical cannulated architectural feature, therefore the carbon nano-tube of hollow can be used as the passage that is communicated with top electrode and bottom electrode, metal ion enters this carbon nano-tube and transmission within it, the metal ion that arrives bottom electrode constantly is reduced into metal, finally reach top electrode, form the nano metal conducting bridge in the inside of carbon nano-tube like this.Device resistance is in low resistive state: under the reversed electric field effect, this nano metal conducting bridge disconnects, and device returns to great-great-grandfather's state, and the conduction of conductive channel and disconnection are in the inner generation of intrinsic carbon nano-tube.Therefore pass through the quantity and the diameter of controlling carbon nanotube, the effectively fluctuation of control device voltage and current, the controllability of raising memory.On the other hand, since metal ion or metal be bound in the carbon nano-tube.Even under hot conditions, also can effectively suppress metal ion or the peripherad diffusion of metal, help the maintenance of device to original resistance state, the raising memory to the permanent hold facility of data, finally produces the novel ultra-large non-volatility memorizer of dependable performance under hot environment.
Description of drawings
Accompanying drawing is this solid-state electrolytic solution resistance change memory structural representation, wherein (a) low resistance state (b) high-impedance state.
Among the figure: 1. bottom electrode .2. dielectric 3. carbon nano-tube 4. top electrodes
Embodiment
Embodiment:
This resistance-variable storing device, comprise bottom electrode 1, top electrode 4, carbon nano-tube 3 and dielectric 2, the material selection 50nm platinum of bottom electrode, the material selection 50nm copper metal of top electrode, the silicon dioxide insulator dielectric thickness is 500nm, on the silicon dioxide insulator medium, form confined structure, the bore width is 150 nanometers, carbon nano-tube in confined structure, carbon nano-tube selects for use diameter and length to be respectively the many walls insulation carbon nano-tube of 100nm and 3um, and the length by the CMP controlling carbon nanotube is 200nm.
The preparation process of this resistance-variable storing device is as follows:
1) utilize PVD (physical vapor deposition) or CVD (chemical vapor deposition) process deposits bottom electrode, the thickness of bottom electrode is the 50nm platinum;
2) utilize PVD (physical vapor deposition) or CVD (chemical vapor deposition) process deposits dielectric film medium silicon dioxide, its thickness is 500nm;
3) photoetching and the etching technics by routine forms the limiting structure (confinedstructure) that exposes bottom electrode, and the bore width of described limiting structure is 150nm;
4) utilize conventional technology on bottom electrode, to plate catalyst film;
5) utilize conventional technology carbon nano-tube; The diameter of described carbon nano-tube and length are respectively 100nm and 3um;
6) utilize PVD (physical vapor deposition) or CVD (chemical vapor deposition) process deposits dielectric film medium to fill limiting structure;
7) utilize conventional CMP (Chemical Mechanical Polishing) process to carry out the length of polishing with controlling carbon nanotube, the length of the carbon nano-tube after the polishing is 200nm;
8) utilize PVD (physical vapor deposition) or CVD (chemical vapor deposition) process deposits top electrode, its thickness is 50nm copper metal.
Resistance-variable storing device of the present invention has made full use of stable resistive characteristic, the reliability height of above-mentioned resistive material.Removing the foregoing description resistance-variable storing device is, utilizes the material of above-mentioned resistive characteristic, can also construct other device architectures
The above is only for the preferred embodiment of invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being made, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution, it is characterized in that: comprise bottom electrode, top electrode, dielectric and carbon nano-tube, dielectric is between bottom electrode and top electrode and form limiting structure (confined structure), carbon nano-tube in limiting structure; The material of described bottom electrode and top electrode is metal, the conductive compound of stable in properties under electric field action or the metal that is easy to be oxidized to metal ion under electric field action, but top electrode can not use the identical described electrode material of character simultaneously with bottom electrode; Described carbon nano-tube is Single Walled Carbon Nanotube or multi-walled carbon nano-tubes; The material of described insulation film is a silicon dioxide.
2. according to the described resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution of claim 1, it is characterized in that: the thickness of described bottom electrode is 5nm～200nm.
3. according to the described resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution of claim 1, it is characterized in that: the thickness of described top electrode is 5nm～200nm.
4. according to the described resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution of claim 1, it is characterized in that: described under electric field action the metal of stable in properties be platinum, iridium or ruthenium.
5. according to the described resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution of claim 1, it is characterized in that: described conductive compound is titanium oxide, ruthenium-oxide or tin indium oxide.
6. according to the described resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution of claim 1, it is characterized in that: the described metal that is easy to be oxidized to metal ion under electric field action is copper, silver, iron, zinc or nickel.
7. according to the described resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution of claim 1, it is characterized in that: the bore width that described dielectric forms limiting structure is 10nm～10um.
8. according to the described resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution of claim 1, it is characterized in that: described carbon nano-tube is P type Single Walled Carbon Nanotube, N type Single Walled Carbon Nanotube, single wall insulation carbon nano-tube, P type multi-walled carbon nano-tubes, N type multi-walled carbon nano-tubes or many walls insulation carbon nano-tube, and the diameter＞6nm of carbon nano-tube, length are 5nm～5um; Utilizing the length of the carbon nano-tube after CMP (Chemical Mechanical Polishing) process (CMP) polishing is 5nm～5um.
9. according to the described resistance-variable storing device that utilizes carbon nano-tube as solid-state electrolytic solution of claim 1, it is characterized in that: the thickness of described insulating film material silicon dioxide is 10nm～10um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010593266.3A CN102157684B (en) | 2010-12-17 | 2010-12-17 | Resistive random access memory (RRAM) using carbon nano tube (CNT) as solid state electrolyte |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010593266.3A CN102157684B (en) | 2010-12-17 | 2010-12-17 | Resistive random access memory (RRAM) using carbon nano tube (CNT) as solid state electrolyte |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102157684A true CN102157684A (en) | 2011-08-17 |
| CN102157684B CN102157684B (en) | 2015-04-15 |
Family
ID=44438992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010593266.3A Expired - Fee Related CN102157684B (en) | 2010-12-17 | 2010-12-17 | Resistive random access memory (RRAM) using carbon nano tube (CNT) as solid state electrolyte |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102157684B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881651A (en) * | 2012-10-25 | 2013-01-16 | 天津理工大学 | Method for improving electrical interconnection characteristic of carbon nano tube |
| CN107634139A (en) * | 2017-08-30 | 2018-01-26 | 西安理工大学 | A kind of preparation method for resisting big voltage oxide silicon resistance changing film |
| CN107663633A (en) * | 2017-08-30 | 2018-02-06 | 西安理工大学 | A kind of preparation method of the silica resistance changing film of doped carbon nanometer pipe |
| CN110085589A (en) * | 2018-01-26 | 2019-08-02 | 中芯国际集成电路制造（天津）有限公司 | Carbon nanotube module, semiconductor devices and manufacturing method |
| CN110400872A (en) * | 2018-04-24 | 2019-11-01 | 中芯国际集成电路制造（天津）有限公司 | The manufacturing method of carbon nanotube storage organization and the manufacturing method of semiconductor devices |
| CN110400871A (en) * | 2018-04-24 | 2019-11-01 | 中芯国际集成电路制造（天津）有限公司 | The manufacturing method of carbon nanotube storage organization and the manufacturing method of semiconductor devices |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565337B (en) * | 2018-04-03 | 2021-05-18 | 集美大学 | Method for preparing resistive random access memory by using nano shielding layer to perform positioning plasma processing |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100072445A1 (en) * | 2008-04-11 | 2010-03-25 | Sandisk 3D Llc | Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same |
-
2010
- 2010-12-17 CN CN201010593266.3A patent/CN102157684B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100072445A1 (en) * | 2008-04-11 | 2010-03-25 | Sandisk 3D Llc | Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881651A (en) * | 2012-10-25 | 2013-01-16 | 天津理工大学 | Method for improving electrical interconnection characteristic of carbon nano tube |
| CN102881651B (en) * | 2012-10-25 | 2015-10-28 | 天津理工大学 | A kind of method improving electrical interconnection characteristic of carbon nano tube |
| CN107634139A (en) * | 2017-08-30 | 2018-01-26 | 西安理工大学 | A kind of preparation method for resisting big voltage oxide silicon resistance changing film |
| CN107663633A (en) * | 2017-08-30 | 2018-02-06 | 西安理工大学 | A kind of preparation method of the silica resistance changing film of doped carbon nanometer pipe |
| CN107663633B (en) * | 2017-08-30 | 2019-09-27 | 西安理工大学 | A kind of preparation method of the silica resistance changing film of doped carbon nanometer pipe |
| CN107634139B (en) * | 2017-08-30 | 2020-01-14 | 西安理工大学 | Preparation method of large-voltage-resistant silicon oxide resistance change film |
| CN110085589A (en) * | 2018-01-26 | 2019-08-02 | 中芯国际集成电路制造（天津）有限公司 | Carbon nanotube module, semiconductor devices and manufacturing method |
| CN110400872A (en) * | 2018-04-24 | 2019-11-01 | 中芯国际集成电路制造（天津）有限公司 | The manufacturing method of carbon nanotube storage organization and the manufacturing method of semiconductor devices |
| CN110400871A (en) * | 2018-04-24 | 2019-11-01 | 中芯国际集成电路制造（天津）有限公司 | The manufacturing method of carbon nanotube storage organization and the manufacturing method of semiconductor devices |
| CN110400872B (en) * | 2018-04-24 | 2024-02-23 | 中芯国际集成电路制造（天津）有限公司 | Method for manufacturing carbon nano tube storage structure and method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102157684B (en) | 2015-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102157684B (en) | Resistive random access memory (RRAM) using carbon nano tube (CNT) as solid state electrolyte | |
| CN103682091B (en) | Resistive memory structure, operation method and manufacturing method thereof | |
| Zhao et al. | Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS 2/Au structure for multilevel flexible memory | |
| Kim et al. | All solution-processed, fully transparent resistive memory devices | |
| Wang et al. | Fabrication and characterization of extended arrays of Ag2S/Ag nanodot resistive switches | |
| Wu et al. | A low power phase change memory using thermally confined TaN/TiN bottom electrode | |
| CN102683583A (en) | Unipolar resistive random access memory and manufacturing method thereof | |
| WO2012071892A1 (en) | Resistance conversion memory and method for manufacturing the same | |
| CN103035842B (en) | Organic resistive random access memory based on graphene quantum dot doping and preparation method thereof | |
| Xiong et al. | Towards ultimate scaling limits of phase-change memory | |
| TW200847398A (en) | Phase-change memory element | |
| CN101826598B (en) | Polymorphic organic resistive random access memory and preparation method | |
| US9269901B2 (en) | Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the same | |
| CN109411600A (en) | A kind of method and its resistance-variable storing device reducing resistance-variable storing device operation voltage | |
| CN101562229A (en) | Resistance-variable storing device | |
| CN106299106A (en) | Promote method and the application thereof of resistance-variable storing device stability | |
| CN102723438A (en) | An organic resistance random access memory unit, an organic resistance random access memory and a preparation method thereof | |
| CN111916558A (en) | Memristor with h-BN as intermediate intercalation | |
| Zhao et al. | Resistive switching characteristics of Dy 2 O 3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition | |
| CN102903847B (en) | P/N-type laminated resistive random access memory for growing metal nano crystal particles spontaneously | |
| Mittermeier et al. | Comparison of spin-on-glass and WO3 as an insulating layer for printed resistive memory devices | |
| CN103337589B (en) | Quasi-one-dimensional nanometer resistive random access memory and preparation method based on chalcogen cuprous compounds | |
| CN101414658A (en) | Solid-state electrolytic solution resistance change memory and preparation method thereof | |
| CN101867016A (en) | Resistance type memory based on metal, zinc oxide and heavy doping silicon structure | |
| CN110911558B (en) | VOx gate tube with novel structure and material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150415 Termination date: 20191217 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |