CN102157622B - Method for manufacturing serial uniwafer integrated multi-junction thin film solar cell - Google Patents
Method for manufacturing serial uniwafer integrated multi-junction thin film solar cell Download PDFInfo
- Publication number
- CN102157622B CN102157622B CN2011100540190A CN201110054019A CN102157622B CN 102157622 B CN102157622 B CN 102157622B CN 2011100540190 A CN2011100540190 A CN 2011100540190A CN 201110054019 A CN201110054019 A CN 201110054019A CN 102157622 B CN102157622 B CN 102157622B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- thin film
- contact layer
- integrated multi
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the manufacturing field of a serial uniwafer integrated multi-junction thin film solar cell. The manufacturing method comprises the following steps: depositing a multi-junction p-n junction serial solar cell epitaxy material comprising at least an insulating layer, a lower contact layer, a tunnel junction, a multi-junction p-n junction structure and a top contact layer which are grown upwards from the substrate and are connected sequentially by utilizing a molecular epitaxy or metallorganics chemical vapor deposition method; corroding to form a lower contact layer table board by utilizing a photoetching technology and an etching technology, and etching the corrosion table board to the lower isolating layer; growing and passivating the insulating layer is at the frontage of the solar cell epitaxy material by utilizing a deposition method, and manufacturing an electrode window and a light in window by utilizing the photoetching and etching technologies; and manufacturing an electric connecting layer on the electrode window and the passivated insulating layer by utilizing the photoetching and film coating technologies, and forming the electric connection between a top contact layer and the lower contact layer through a stripping technology and an annealing process. The solar cell has the characteristics of high efficiency, high-voltage output, light weight and flexibility.
Description
Technical field
The present invention relates to the manufacturing field of the integrated multi-knot thin film solar cell of a kind of tandem monolithic.
Background technology
Existing volume production solar cell mainly adopts the materials such as polysilicon, amorphous silicon to make.Because the band gap of silicon only has 1.1eV, and belongs to the indirect gap semiconductor material, so photoelectric conversion efficiency is not high, only has about 16%.If adopt many knots form, absorb sunlight by multijunction structure, then can greatly increase efficient, can reach more than 40%.
Existing multijunction solar cell all is single separate structures, and output voltage only has several volts, can not satisfy high-voltage applications; And owing to use hard substrate, causing battery is rigidity, can not satisfy arcuate surfaces such as balloon are arranged, the application on the dirigible; Except causing solar cell weight larger in addition, epitaxial loayer only has about 10 μ m effective, and the substrate that supports has 300-500 μ m thick, and it is invalid making the weight of conventional solar cell more than 95%.Therefore, manufacture the single chip integrated multi-junction solar hull cell of a kind of tandem and have realistic meaning.
Summary of the invention
The present invention provides the manufacture method of the single chip integrated multi-knot thin film solar cell of a kind of tandem in order to overcome above deficiency.
To achieve the object of the present invention, the manufacture method of the single chip integrated multi-knot thin film solar cell of this tandem may further comprise the steps:
1, solar cell epitaxial material growth link, use molecular beam epitaxy or metal-organic chemical vapor deposition equipment method depositing solar cell epitaxial material on substrate, the solar cell epitaxial material comprises at least from substrate and up generates and the separator, lower contact layer, the tunnel junction that connect successively, tie p-n junction structure, top contact layer more that this technical scheme can obtain high-quality solar cell epitaxial material;
2, use photoetching technique and lithographic technique to erode away lower contact layer table top, form the solar cell that the monolithic integrated array is arranged;
3, use photoetching technique and lithographic technique that lower contact layer mesa etch is arrived lower floor's separator, so that adjacent solar battery forms good electric isolation;
4, use deposition process at the positive growth of passivation insulating barrier of solar cell epitaxial material;
5, use photoetching technique and lithographic technique to leave electrode window through ray and enter light window in passivation insulation;
6, use photoetching technique and coating technique to prepare electric connection layer in electrode window through ray and passivation insulation;
7, use lift-off technology and annealing process, realize being electrically connected by electric connection layer between top contact layer and the lower contact layer.
Solar cell epitaxial material growth link also comprises the corrosion sacrifice layer that is grown directly upon on the substrate, and the corrosion sacrifice layer is between substrate and separator.
Backing material is GaAs material, many knot p-n junction structures are gallium indium phosphorus/GaAs binode or GaAs/germanium binode or gallium indium phosphorus/GaAs/germanium three knots, top contact layer and lower contact layer are highly doped semi-conducting materials, highly doped semi-conducting material is highly doped GaAs, separator is semi insulating semiconductor or p-n junction isolation, and tunnel junction refers at the highly doped and very thin p-n junction structure layer of lower contact layer growth.So far formed the solar cell epitaxial material of the multiple semiconductor p-n junction series connection that energy gap from top to down reduces successively, can repeatedly absorb sunlight and realize the high efficiency opto-electronic conversion.
Lithographic technique is inductively coupled plasma etching or reactive ion etching or wet etching or plasma etching.
Deposition process is plasma enhanced CVD or microwave electron cyclotron resonance-chemical vapour deposition (CVD).
Passivation insulation is nano oxidized silicon thin film or nano silicon nitride silicon thin film.
Coating technique is electron beam evaporation evaporation or sputter coating.
Utilize substrate desquamation and film transfer technology in conjunction with the ad hoc corrosion sacrifice layer process of this technology, gallium arsenide substrate is peeled off, simultaneously the solar cell epitaxial material is transferred on the fexible film substrate, the combination of solar cell epitaxial material and fexible film substrate can be Van der Waals for or the bonding mode of bonding agent, and fexible film is polytetrafluoroethylene film or polyimide film or aluminium foil.
The invention has the advantages that, realize the high efficiency opto-electronic conversion by the repeatedly absorption to sunlight, only a metal deposition can be finished solar cell and is connected in series, can realize flexibly on a large scale Voltage-output and high voltage output, satisfy arcuate surfaces such as balloon are arranged, the application on the dirigible, solar cell weight significantly reduces, and realizes efficient, High voltage output, light weight and flexibility, can be applied in the specialized field such as space flight; The innovation of manufacture craft so that this solar cell cost performance is higher, has more the market competitiveness.
Description of drawings
Fig. 1 is the solar cell material structural representation.
Fig. 2 is lower contact layer mesa etch schematic diagram.
Fig. 3 is solar cell mesa-isolated etching schematic diagram.
Fig. 4 is the structural representation of p-n junction separator.
Fig. 5 is passivation deposition and opening schematic diagram.
Fig. 6 is adjacent two solar cell cascaded structure schematic diagrames.
Fig. 7 is the solar battery structure schematic diagram of yi word pattern series connection.
Fig. 8 is the solar battery structure schematic diagram of S type series connection.
Fig. 9 is the solar cell material structural representation that black wax supports.
Figure 10 is the structural representation of solar cell epitaxial material and fexible film substrate.
Figure 11 is the structural representation of the integrated multi-knot thin film solar cell of tandem monolithic of the present invention.
Embodiment
The present invention is further described with embodiment below in conjunction with accompanying drawing:
The integrated multi-knot thin film solar cell of this tandem monolithic of present embodiment mainly consists of the following components: 1, substrate, 2, separator, 3, lower contact layer, 4, tunnel junction, 5, tie the p-n junction structure, 6, the top contact layer more, 7, passivation insulation, 8, electric connection layer.
The manufacture method of the integrated multi-knot thin film solar cell of this tandem monolithic mainly may further comprise the steps:
1, use as shown in Figure 1 molecular beam epitaxy or metal-organic chemical vapor deposition equipment method at GaAs (GaAs) substrate 1 growth one deck corrosion sacrifice layer 2, this corrosion sacrifice layer 2 is aluminium arsenide (AlAs) materials.Simultaneously at corrosion sacrifice layer 2 deposition multijunction solar cell epitaxial materials 8, this solar cell epitaxial material 8 comprises at least from gallium arsenide substrate 1 and up generates and separator 3, lower contact layer 4, the tunnel junction 5 of successively connection, tie p-n junction structure 6 and top contact layer 7 more.Many knot p-n junction structures can be gallium indium phosphorus (GaInP)/GaAs (GaAs) binode, GaAs (GaAs)/germanium (Ge) binode or gallium indium phosphorus (GaInP)/GaAs (GaAs)/germanium (Ge) three knot materials, top contact layer and lower contact layer are highly doped semi-conducting materials (highly doped GaAs), separator can be semi insulating semiconductor or p-n junction isolated material, and tunnel junction is at the highly doped and very thin p-n junction structure layer of lower contact layer growth; Thereby formed the multiple semiconductor p-n junction series connection that energy gap from top to down reduces successively, realized the conversion of high efficiency luminous point by the absorption repeatedly to sunlight.
2, lower contact layer etching.At first make figure by lithography at solar cell epitaxial material 8 shown in Figure 1, then use coupled plasma etching (ICP dry method) or wet etching technique to erode away lower contact layer table top 9, form solar cell epitaxial material structure 14 shown in Figure 2.Thereby form the array of single chip integrated series connection, form several to the array arrangement of hundreds of above batteries, this structure efficiently with battery integrated-solar battery structure of monolithic, according to using the arrange quantity of battery of needs adjustable array, so that the making of solar cell is more flexible; Except saving in addition the material of making solar cell, reduce production costs, improve product in the competitiveness in market.
3, mesa-isolated etching.In conjunction with Fig. 2 to Fig. 4, basis at solar cell epitaxial material structure 14 shown in Figure 2 makes figure by lithography, use coupled plasma etching (ICP dry method) or wet etching technique that lower contact layer table top 9 is etched into lower floor's separator 3, form separator table top 10 and form solar cell epitaxial material structure 15 shown in Figure 3.In order to realize the electric isolation between single battery, separator can be selected semi insulating semiconductor or p-n junction isolated material; When separator 3 was the semi insulating semiconductor material, when etching into separator 3, the separator 3 of high impedance had been isolated single battery; When separator 3 is the p-n junction isolated material, p-n junction isolated material structure comprises the P-type material 11 of top layer, the n type material 12 of bottom and the depletion region 13 that is positioned at the middle high resistant of p-n junction isolated material that is formed by P-type material 11 and n type material 12 as shown in Figure 4, when etching into n type material when following, the depletion region of high resistant is separated single battery.This technical scheme is so that form good electric isolation between single battery, solar cell has the electricity security performance of height, has guaranteed the work that solar cell is stable.
4, passivation insulation deposition and opening.With reference to figure 5, at first use plasma enhanced CVD or microwave electron cyclotron resonance-chemical vapour deposition technique in the superficial growth passivation insulation 17 of solar cell epitaxial material structure 15 shown in Figure 5, this passivation insulation 17 is nano oxidized silicon thin film or nano silicon nitride silicon thin film, then deposit photoresist in passivation insulation 17, then make graph window by lithography, use reactive ion etching or wet etching are left electrode window through ray and are entered light window, form solar cell epitaxial material structure 16, electrode window through ray comprises top contact layer electrode window through ray 18 and lower contact layer electrode window through ray 19.
5, electric connection layer forms and connects with battery.By solar cell epitaxial material structure 20 shown in Figure 6 as can be known, this solar cell is provided with tunnel junction 5, just in response to having used semiconductor tunnel junction technology, so that the doping polarity of the top contact layer 7 of solar cell, lower contact layer 4 electrodes is consistent, can be all N-shaped or p-type; Therefore, can realize top contact layer 7, the ohmic contact of lower contact layer 4 electrodes and the end to end series connection of solar cell by a metal deposition.Concrete technology is: at first make electric connection layer 21 figures by lithography, with top contact layer electrode window through ray 18, lower contact layer electrode window through ray 19 and the exposure of the coupling part between them, the photoresist of this part is removed; Then make deposited by electron beam evaporation evaporation or sputter coating technology metal on evaporation on the exposure area, so that metal directly is deposited on the chip, form top contact layer 7 and be connected with the electrode of lower contact layer 4, and the zone of other (photoresist is arranged), metal deposition is on photoresist; Then after using acetone to remove photoresist, the removal of the photoresist of metal below it in these (photoresist are arranged) zone is removed, and is formed into light window, enters the zone that light window had both received sunlight.Use this technology to realize the head and the tail series connection of solar cell, according to design and practical needs, the quantity of control series-connected solar cells, but the quantity of series-connected solar cells several to hundreds of, reach the above voltage of 400V so that solar cell can be exported, obtain the requirement of High voltage output.The connected mode of the series connection of solar cell 25 and quantity can arrange control by photolithography plate, can be rods arranged in horizontal line shown in Figure 7 or S font arrangement shown in Figure 8, realize flexibly on a large scale Voltage-output and high voltage output.
6, substrate desquamation and film transfer.Corrosion sacrifice layer 2 in the material is used for substrate desquamation and transfer.At first use black wax 22 to support in the front of solar cell epitaxial material 20 shown in Figure 9, then use the selective corrosion corrosion to fall to corrode sacrifice layer 2, and 20 layers of other solar cell epitaxial materials are unaffected; Because corrosion sacrifice layer 2 is aluminium arsenide materials in this execution mode, selective corrosion liquid can be selected hydrofluoric acid solution, hydrofluoric acid solution can dissolve aluminium arsenide corrosion sacrifice layer 2 in room temperature, and reaction unit is simple plastics or polytetrafluoro beaker, and normal temperature leaves standstill and can corrode after 6-8 hour fully.Like this, by removing corrosion sacrifice layer 2, gallium arsenide substrate 1 realizes separating with solar cell epitaxial material 20.As shown in figure 10, the solar cell epitaxial material 20 that black wax 22 is supported is transferred to fexible film substrate 23, and fexible film substrate 23 can be polytetrafluoroethylene film substrate or polyimide film substrate or aluminum substrates; Solar cell epitaxial material 20 can be the bonding mode of Van der Waals for or bonding agent with the combination of fexible film substrate.Re-use at last the dewax solvent black wax 22 is removed the solar cell 24 that obtains as shown in figure 11.Aluminium arsenide substrate after the separation can be recycled in the again growth of material, meets the theory of Environmental Design and production.This technical scheme is so that solar cell can be in the application that has on arcuate surfaces such as balloon, the dirigible, removing in addition, the weight of solar cell itself has also obtained significantly reducing, remedied the defective of existing solar cell aspect flexible and light weight, the service efficiency of solar cell get a qualitative improvement.
Claims (14)
1. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic is characterized in that: may further comprise the steps:
(1), solar cell epitaxial material growth link, use molecular beam epitaxy or metal-organic chemical vapor deposition equipment method depositing solar cell epitaxial material on substrate, the solar cell epitaxial material comprises at least from substrate and up generates and the separator, lower contact layer, the tunnel junction that connect successively, tie p-n junction structure, top contact layer more;
(2), use photoetching technique and lithographic technique to erode away lower contact layer table top;
(3), use photoetching technique and lithographic technique that lower contact layer mesa etch is arrived lower floor's separator;
(4), use deposition process at the positive growth of passivation insulating barrier of solar cell epitaxial material;
(5), use photoetching technique and lithographic technique to leave electrode window through ray and enter light window in passivation insulation;
(6), use photoetching technique and coating technique to prepare electric connection layer in electrode window through ray and passivation insulation;
(7), use the lift-off technology stripping photoresist, use annealing technology to plated metal and adhere to chip and anneal, realize being electrically connected by electric connection layer between top contact layer and the lower contact layer.
2. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1, it is characterized in that: described backing material is GaAs material.
3. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1 is characterized in that: described many knot p-n junction structures are gallium indium phosphorus/GaAs binode or GaAs/germanium binode or gallium indium phosphorus/GaAs/germanium three knots.
4. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1, it is characterized in that: described top contact layer and lower contact layer are highly doped semi-conducting materials.
5. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 3, it is characterized in that: described highly doped semi-conducting material is highly doped GaAs.
6. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1 is characterized in that: described separator is semi insulating semiconductor or p-n junction isolation.
7. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1 is characterized in that: described tunnel junction refers at the highly doped p-n junction structure layer of lower contact layer growth.
8. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1, it is characterized in that: described lithographic technique is inductively coupled plasma etching or reactive ion etching or wet etching or plasma etching.
9. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1, it is characterized in that: described deposition process is plasma enhanced CVD or microwave electron cyclotron resonance-chemical vapour deposition (CVD).
10. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1, it is characterized in that: described passivation insulation is nano oxidized silicon thin film or nano silicon nitride silicon thin film.
11. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1 is characterized in that: described coating technique is electron beam evaporation evaporation or sputter coating.
12. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1 is characterized in that: described solar cell epitaxial material growth link also comprises the corrosion sacrifice layer that is grown directly upon on the substrate.
13. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 1, it is characterized in that: also comprise substrate desquamation and the film transfer technology utilized, with substrate desquamation, simultaneously the solar cell epitaxial material is transferred on the fexible film substrate.
14. the manufacture method of the integrated multi-knot thin film solar cell of tandem monolithic according to claim 13 is characterized in that: described fexible film substrate is polytetrafluoroethylene film substrate or polyimide film substrate or aluminum substrates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100540190A CN102157622B (en) | 2011-03-08 | 2011-03-08 | Method for manufacturing serial uniwafer integrated multi-junction thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100540190A CN102157622B (en) | 2011-03-08 | 2011-03-08 | Method for manufacturing serial uniwafer integrated multi-junction thin film solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102157622A CN102157622A (en) | 2011-08-17 |
| CN102157622B true CN102157622B (en) | 2013-05-01 |
Family
ID=44438945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100540190A Expired - Fee Related CN102157622B (en) | 2011-03-08 | 2011-03-08 | Method for manufacturing serial uniwafer integrated multi-junction thin film solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102157622B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103000739B (en) * | 2011-09-16 | 2016-01-06 | 深圳光启高等理工研究院 | The supply unit of a kind of electronic equipment and circuit thereof |
| CN102800726B (en) * | 2012-09-04 | 2015-04-29 | 天津三安光电有限公司 | Flip solar battery chip and preparation method thereof |
| CN103066159B (en) * | 2013-01-11 | 2016-04-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of preparation method of the monolithic coupling assembling based on thermophotovoltaic |
| CN104009047B (en) * | 2013-02-27 | 2017-10-24 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of laser photovoltaic cell of inverted structure and preparation method thereof |
| CN104201231A (en) * | 2014-09-11 | 2014-12-10 | 六安市大宇高分子材料有限公司 | Hybrid three-junction compound photovoltaic cell |
| WO2017123777A1 (en) | 2016-01-13 | 2017-07-20 | mPower Technology, Inc. | Fabrication and operation of multi-function flexible radiation detection systems |
| EP3552242B1 (en) | 2016-12-09 | 2021-07-07 | mPower Technology, Inc. | High performance solar cells, arrays and manufacturing processes therefor |
| CN106611799B (en) * | 2017-01-12 | 2018-02-02 | 合肥海润光伏科技有限公司 | A kind of two-sided crystal silicon solar energy battery of inkjet printing and preparation method thereof |
| US10914848B1 (en) | 2018-07-13 | 2021-02-09 | mPower Technology, Inc. | Fabrication, integration and operation of multi-function radiation detection systems |
| CN111276550A (en) * | 2019-11-11 | 2020-06-12 | 中国科学院苏州纳米技术与纳米仿生研究所南昌研究院 | Flexible solar cell with graphene transparent electrode and manufacturing method thereof |
| CN111524984A (en) * | 2020-04-20 | 2020-08-11 | 中山德华芯片技术有限公司 | Flexible gallium arsenide solar cell chip and manufacturing method thereof |
| CN112531077B (en) * | 2020-12-11 | 2022-07-29 | 中国电子科技集团公司第十八研究所 | Preparation method of flexible gallium arsenide solar cell for space |
| WO2024075738A1 (en) * | 2022-10-03 | 2024-04-11 | 東洋紡株式会社 | Long laminate, photovoltaic device, and method for producing photovoltaic device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7825328B2 (en) * | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| US20100047955A1 (en) * | 2008-08-19 | 2010-02-25 | Xunlight Corporation | Interconnection system for photovoltaic modules |
-
2011
- 2011-03-08 CN CN2011100540190A patent/CN102157622B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102157622A (en) | 2011-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102157622B (en) | Method for manufacturing serial uniwafer integrated multi-junction thin film solar cell | |
| JP5106880B2 (en) | Metamorphic layers in multijunction solar cells. | |
| JP5512086B2 (en) | Inverted modified solar cell structure with vias for backside contact | |
| Lee et al. | Transfer printing methods for flexible thin film solar cells: Basic concepts and working principles | |
| CN102437243B (en) | Heterojunction with intrinsic thin layer (HIT) solar cell structure with heterogeneous floating junction back passivation, and preparation process thereof | |
| US10090420B2 (en) | Via etch method for back contact multijunction solar cells | |
| TW201803136A (en) | Surface mount solar cell with integrated coverglass | |
| WO2015032241A1 (en) | Solar battery integrated with bypass diode, and preparation method therefor | |
| CN103107229A (en) | Novel graphene/semiconductor multi-junction cascading solar battery and preparation method thereof | |
| WO2014157521A1 (en) | Photoelectric conversion element | |
| KR101163154B1 (en) | Method for fabricating high efficiency flexible compound semiconductor thin film solar cell with chalcopyrite system | |
| JP2016526304A (en) | Solar cell structure and manufacturing method thereof | |
| CN102244151A (en) | Method for manufacturing solar battery | |
| CN104659158A (en) | Inverted multi-junction solar cell and manufacturing method thereof | |
| CN111463303B (en) | High-voltage series structure multi-junction solar cell and manufacturing method thereof | |
| CN111048602B (en) | Laser charging efficient solar cell based on interconnection technology and preparation method thereof | |
| CN104733556A (en) | Three-node GaAs solar cell with surface roughening structure and preparation method thereof | |
| CN107546293B (en) | Double-junction solar cell, preparation method thereof and solar cell epitaxial structure | |
| Mizuno et al. | A “smart stack” triple-junction cell consisting of InGaP/GaAs and crystalline Si | |
| CN204596812U (en) | A kind of three knot GaAs solar cells with surface coarsening structure | |
| CN104218108B (en) | High-efficiency flexible thin film solar cell | |
| WO2017067413A1 (en) | Solar cell, manufacturing method therefor and solar cell array assembled thereof | |
| US20160268470A1 (en) | Solar cell manufacturing method | |
| WO2014163043A1 (en) | Photoelectric conversion element | |
| CN104681652A (en) | Flip multi-junction solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130501 Termination date: 20200308 |