CN102157579A - Solar battery based on silicon nano material - Google Patents
Solar battery based on silicon nano material Download PDFInfo
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- CN102157579A CN102157579A CN 201010581199 CN201010581199A CN102157579A CN 102157579 A CN102157579 A CN 102157579A CN 201010581199 CN201010581199 CN 201010581199 CN 201010581199 A CN201010581199 A CN 201010581199A CN 102157579 A CN102157579 A CN 102157579A
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Abstract
The invention discloses a solar battery based on a silicon nano material. The solar battery based on the silicon nano material comprises a silicon wafer on which conductive glass is arranged; an insulation sealing layer is encircled between the conductive glass and the silicon wafer; an electrolyte chamber is formed between the conductive glass and the silicon wafer; ion liquid electrolyte is arranged in the electrolyte chamber; and lead-out electrodes are arranged on the backs of the conductive glass and the silicon wafer so as to form an ohm electrode structure. The solar battery has the characteristics of high thermal stability and chemical stability; a thinner silicon wafer can be used as a silicon electrode, the requirement for purity of the silicon is relatively low and the encapsulation requirement on the battery is reduced greatly at the same time. The invention also provides a low-cost, high-efficiency and stable technology for preparing the solar battery, which has a positive practical significance.
Description
Technical field
The present invention relates to a kind of solar cell, be specifically related to a kind of solar cell, belong to technical field of solar based on silicon nanostructure.
Background technology
Along with the fast development of economy, traditional fossil energy uses the global energy crisis and the problem of environmental pollution that bring to become increasingly conspicuous, and becomes that restriction society is lasting, the key factor of harmonious development.And Renewable Energy Development is one of effective ways that address the above problem.Make a general survey of other new forms of energy kind, wind energy, biological energy source, solar energy etc., solar energy is abundant because of its reserves, uses superiority such as cleanliness without any pollution, and it utilizes prospect best, and is with the largest potentiality.
Solar cell is the photoelectric device that solar energy directly is converted to electric energy, is to utilize one of effective and efficient manner of solar energy.In conventional solar cell, the technical development of silica-based solar cell is the most ripe, and photoelectric conversion efficiency is also the highest, but because its production cost height, manufacture craft is loaded down with trivial details, has limited its large-scale commercial application.
In recent years, in order to reduce the silicon solar cell cost, simplify technology, some seminar has been studied based on the liquid electrolyte silica-based solar cell that contains the redox duplet.Nakato etc. are with HI and I
2(or I
3 -) be oxidation-reduction pair, be solvent with water, having obtained electricity conversion is 7.4% silica-based electrochemistry solar cell [C.R.Chimie.2006,9,275～281].Lewis etc. with 1,1 '-dimethyl ferrocene and 1,1 '-the dimethyl ferrocene salt is an oxidation-reduction pair, is solvent with methyl alcohol, has obtained photoelectric conversion efficiency and be 14% silica-based electrochemistry solar cell [J.Phy.Chem.C.2008,112,6194-6201].Chinese invention patent application CN101369493 and CN101262019 have reported with saturated bromine/aqueous solution of hydrogen bromide to be the photoelectrochemical solar cell of redox duplet respectively.
These batteries have adopted organic solvent such as methyl alcohol, acetonitrile or water as electrolyte solution, and manufacture method is simple, can reduce the cost of manufacture of solar cell to a certain extent.But,, therefore limited its further research and development because these solvents exist volatile, high toxicity, easily leak and silicon is had certain shortcomings such as corrosivity; In addition, the less stable of this class battery is also very high to the requirement of encapsulation.
Ionic liquid (Ionic liquids) as a kind of almost nonvolatile liquid, has obtained develop rapidly in recent years, it claims the room temperature fuse salt again, generally is made up of organic cation and inorganic anion.Compare with electrolyte with traditional organic solvent, ionic liquid has a lot of superior character: (1) toxicity is little, and " zero " saturated vapor pressure is not volatile; (2) chemical stability is good, and thermal stable temperature is high and electrochemical window is wide; (3) conductivity is higher; (4) the chemical Modulatory character of performance.Numerous outstanding advantages make ionic liquid become International Technology forward position and research focus.Yet, in area of solar cell, up to now also not about the research of ionic liquid at the silicon nanostructure solar cell.
Summary of the invention
The object of the invention provides a kind of solar cell based on silicon nanostructure, to obtain high efficiency, low cost and stable solar cell.
For achieving the above object, the technical solution used in the present invention is: a kind of solar cell based on silicon nanostructure, comprise silicon chip, described silicon chip is provided with electro-conductive glass, be arranged with the insulated enclosure layer between electro-conductive glass and the silicon chip, between electro-conductive glass and silicon chip, constitute electrolyte chamber, be provided with ionic liquid electrolyte in the electrolyte chamber; The described electro-conductive glass and the silicon chip back side are equipped with extraction electrode, constitute ohmic contact electrode structure;
Described ionic liquid electrolyte is selected from one or more among A, B, the C, wherein:
Described A is selected from imidazole type ion liquid
One or more, wherein, s=0～6, Z is selected from I, SCN, BF
4, PF
6, CF
3SO
3, N (CN)
2[N (SO
2CF
3)
2] in a kind of;
Described B is selected from pyridine type ionic liquid
One or more, wherein, n=0～6, R is selected from I, SCN, BF
4, PF
6, CF
3SO
3, N (CN)
2[N (SO
2CF
3)
2] in a kind of;
Described C is selected from pyrrolidines type ionic liquid
One or more, wherein, k=0～6, M is selected from I, SCN, BF
4, PF
6, CF
3SO
3, N (CN)
2[N (SO
2CF
3)
2] in a kind of;
The upper surface of described silicon chip is provided with silicon nanowire array layer or selective porous silicon layer.
Above, described electro-conductive glass is a prior art, promptly at surface of ordinary glass sputter one deck conducting film such as tin indium oxide (ITO film).
The structure of above-mentioned battery comprises the silicon chip electrode that contains nanostructure, and transparent conducting glass is to electrode and the sandwich sandwich structure that contains the intermediate-ion liquid layer of electrolyte of OR duplet.The back side of described electro-conductive glass and silicon nanostructure all further processes and goes up extraction electrode, and forms ohmic contact, makes solar cell at last.
Certainly, will add the chemical composition with oxidation and reducing power in above-mentioned ionic liquid electrolyte, its acting in conjunction provides the redox duplet.The OR duplet can be lithium iodide and elemental iodine, can be ferrocene and ferrocene salt, can be methyl ferrocene and methyl ferrocene salt, can be isopropyl ferrocene and isopropyl ferrocene salt, also can be cobaltocene and cobaltocene salt or the like.
Further technical scheme, the height of described silicon nanowire array layer is 1～50 μ m.
Further technical scheme, the silicon nanowire array layer that described silicon nanowire array layer is surperficial alkylation modification.The alkylation of silicon face (as methylating) can significantly reduce the oxidation rate of silicon face, the life-span of improving battery greatly.
Further technical scheme, described silicon nanowire array layer are the silicon nanowire array layer that surperficial alkylation modification and metallic particles are modified.As the silicon nanowire array layer that adopts surperficial alkylation modification and platinum grain to modify.Metal (as the platinum) particle of modifying high work content at silicon face can improve the photoelectric conversion efficiency of battery significantly.
Another kind of technical scheme correspondingly, the height of described selective porous silicon layer are 6～90 μ m.
The structure of solar cell of the present invention is roughly from top to bottom:
(1) transparent conducting glass, its effect are to see through sunlight;
(2) transparent ITO conductive membrane layer, its effect is an extraction electrode;
(3) insulated enclosure layer, its effect are the electrolyte chambers of the middle hollow out of sealing constitute between electro-conductive glass and silicon chip around, to store electrolyte and to prevent electrolyte leakage;
(4) hole transmission layer is in the above-mentioned electrolyte chamber, and hole transmission layer promptly is an ionic liquid electrolyte;
(5) photoactive layer, i.e. the silicon nanowire array layer of silicon nanowire array layer, or surface metal particle modification, or the silicon nanowire array layer of surperficial alkylation modification, or the silicon nanowire array layer or the selective porous silicon layer of surperficial alkylation modification and metallic particles modification; Wherein, the alkylation modification effect is to make the silicon face passivation, improves the stability of battery; The effect that metallic particles is modified is as catalyst, the catalyst system and catalyzing redox reaction;
(6) silicon wafer-based bottom is as the base of solar cell;
(7) extraction electrode can adopt metal electrode such as aluminium, titanium/palladium/silver or gallium indium alloy.
Above-mentioned silicon chip can be monocrystalline silicon piece, polysilicon chip or amorphous silicon chip.
Preparation method of the present invention is as follows: prepare photoactive layer at the silicon chip upper surface earlier, this active layer of modifying and decorating drips ionic liquid electrolyte again on above-mentioned active layer structure then, covers electro-conductive glass, and encapsulation gets final product.
The preparation method of described photoactive layer can handle as follows: adopt method that the method for electrodeless chemical corrosion or photoetching and wet method combine at superficial growth one deck silicon nanowire array; Adopt hydrofluoric acid wet chemical etching or inductively coupled plasma resonance dry etching method at superficial growth one deck selective porous silicon or silicon nanowire array, afterwards silicon chip is done alkylation (as methylating) and handled, again by thermal decomposition method or electrochemical process plated metal particle (as platinum grain); And form Ohm contact electrode in silica-based bottom surface deposit metal electrodes with vacuum vapour deposition.
N type silicon nanowire array can promptly be used silver nitrate and hydrofluoric acid mixed solution etching with electrodeless chemical etching step method etching preparation under the normal temperature, the length of silicon nanowires realizes by controlling reaction time; Also can adopt electrodeless chemical corrosion two-step method etching preparation, promptly earlier the silicon chip short time be immersed in silver nitrate and the hydrofluoric acid mixed solution, place in hydrogen peroxide and the hydrofluoric acid mixed solution again, wherein hydrogen peroxide also can substitute with other oxidant, as Fe
3+Salt, reaction is all carried out at normal temperatures, and silicon nanowires length realizes by controlling for second reaction time in step.
N type silicon nanowire array also can prepare with low pressure inductively coupled plasma dry method physical etchings.Realize the etching of silicon nanowires by two kinds of schemes of method that mask and no mask are arranged.Scheme one has the mask etching method to prepare silicon nanometer micropore array, promptly utilize optical exposure and wet corrosion technique to form and have the hole array structure at silicon face, utilize plasma method to carry out dry etching then and reach the silicon nanometer micropore, then mask plate such as metal are removed.Scheme two adopts no mask etching method to prepare the nano-silicon wimble structure, and promptly the silicon slice placed that directly cleaning is finished etching in plasma chamber forms silicon nanowire array structure.
N type selective porous silicon can be with hydrofluoric acid wet chemical etching preparation, and promptly under certain voltage and illumination, etch period can be between 15～120 minutes, and the height of porous silicon is realized by the control etch period.
Because the technique scheme utilization, the present invention compared with prior art has following advantage:
1. the present invention has adopted the electrolyte of ionic liquid electrolyte as solar cell, characteristics such as it has that designability, conductivity height, electrochemical window are wide, thermal stability and chemical stability are good, it is a kind of good environment-friendly type carrier, shortcomings such as volatile, the high toxicity of having avoided that existing electrolyte solution exists, easily leakage, corrosivity and poor stability, also greatly reduce simultaneously the encapsulation requirement of battery, have active operation significance.
2. the encapsulation of solar cell of the present invention requirement is lower, simplified battery preparation technique, thereby cost is lower.
3. the silicon nanowire array or the selective porous silicon structure that adopt of the present invention can fully absorb the sunlight of incident on the one hand, improves the capacity gauge of electric charge, reduces the transmission range of charge carrier, and improves the conversion efficiency of solar cell effectively; On the other hand, can adopt, can reduce cost than the thinner silicon chip of present commercialization photovoltaic cell.
4. the silicon face modified structure that adopts of the present invention useful life that can significantly improve battery, the silicon face modification structure of employing can significantly improve the photoelectric conversion efficiency of battery.
5. the silicon nanowire array structure that adopts of the present invention, owing to adopt the battery structure of coaxial core-shell nano line structure, the electronics of generation can separate and transmit fast with the hole, has reduced the compound of charge carrier.Diffusion length and life-span to minority carrier in the silicon chip do not need too high requirement (＜10 microns), can realize high efficiency relatively battery with the silicon of low-purity, further reduce cost.
Description of drawings
Fig. 1 is the J-V curve chart of the embodiment of the invention one;
Fig. 2 is the J-V curve chart of Comparative Examples one of the present invention;
Fig. 3 is the J-V curve chart of Comparative Examples two of the present invention;
Fig. 4 is the J-V curve chart of the embodiment of the invention two;
Fig. 5 is the J-V curve chart of Comparative Examples four of the present invention;
Fig. 6 is the J-V curve chart of the embodiment of the invention three;
Fig. 7 is the J-V curve chart of the embodiment of the invention four;
Fig. 8 is the J-V curve chart of the embodiment of the invention seven;
Fig. 9 is the J-V curve chart of the embodiment of the invention eight;
Figure 10 is the J-V curve chart of the embodiment of the invention nine;
Figure 11 is the J-V curve chart of the embodiment of the invention ten;
Figure 12 is the J-V curve chart of the embodiment of the invention 11;
Figure 13 is the structural representation of the embodiment of the invention one;
Figure 14 is the x-ray photoelectron power spectrum comparison diagram of the embodiment of the invention four and Comparative Examples five;
Figure 15 is the stability curve comparison diagram of the embodiment of the invention 22 and Comparative Examples six.
Wherein: 1, clear glass; 2, conductive membrane layer; 3, insulation confining bed; 4, hole transmission layer; 5, silicon nanostructure; 6, silicon chip; 7, extraction electrode.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one
Referring to shown in Figure 13, a kind of solar cell based on silicon nanostructure, comprise n type silicon chip 6, described silicon chip is provided with electro-conductive glass (electro-conductive glass comprises clear glass 1 and conductive membrane layer 2), be arranged with insulated enclosure layer 3 between electro-conductive glass and the silicon chip, constitute electrolyte chamber between electro-conductive glass and silicon chip, promptly hole transmission layer 4, are provided with ionic liquid electrolyte in the electrolyte chamber; The described silicon chip back side is provided with extraction electrode 7, constitutes ohmic electrode structure.Described silicon chip 6 is provided with silicon nanostructure 5.
Its preparation method is: at first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least 1 hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5～10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed in 2: 1 by volume, and add the redox duplet of iodine, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid encapsulation; Get final product based on ion liquid silica-based solar cell.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 33.7mAcm of battery
-2, open circuit voltage is 0.322V, and fill factor, curve factor is 0.398, and photoelectric conversion efficiency is 4.3%, and the J-V curve is as shown in Figure 1.
Comparative Examples one
Under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least 1 hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then insert saturated chlorobenzene solution, the methyl-magnesium-chloride (CH of phosphorus pentachloride
3MgCl) handling in the tetrahydrofuran solution (1M) methylates its surface; Use the platinum grain of the method for thermal decomposition then at silicon nanowires and indium and tin oxide film surface deposition 5～10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; The methanol solution that will contain 3mM ferrocene and 0.1mM hexafluorophosphate ferrocene drips number and drops in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered encapsulation; Get final product based on the silica-based solar cell of methanol system.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 1.60mAcm of battery
-2, open circuit voltage is 0.19V, and fill factor, curve factor is 0.40, and photoelectric conversion efficiency is 0.12%, and the J-V curve is as shown in Figure 2.
Comparative Examples two
Under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least 1 hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; Use the platinum grain of the method for thermal decomposition then at silicon nanowires and indium and tin oxide film surface deposition 5～10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Drip 8.6M HBr and 0.05M Br
2The mixed solution number drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered encapsulation; Get final product based on the silica-based solar cell of aqueous systems.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 13.13mAcm of battery
-2, open circuit voltage is 0.396V, and fill factor, curve factor is 0.40, and photoelectric conversion efficiency is 2.10%, and the J-V curve is as shown in Figure 3.
Comparative Examples three
At first under the normal temperature n type silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key; Then form Ohm contact electrode at silicon base bottom surface depositing Al film with the hot vapour deposition method of high vacuum; Will
With
Mixed and added iodine redox duplet in 2: 1 by volume, drip number and drop in above the silicon; At last the indium tin oxide electro-conductive glass is covered on ionic liquid encapsulation; Get final product based on ion liquid silica-based solar cell.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, the short circuit current that records battery is 0.042mAcm
-2, open circuit voltage is 0.281V, and fill factor, curve factor is 0.266, and photoelectric conversion efficiency is 0.003%.
From the foregoing description one and Comparative Examples one, two as seen, adopting the photoelectric conversion efficiency of the silica-based solar cell that ionic liquid makes is 4.3%, is higher than the silica-based solar cell (photoelectric conversion efficiency is 2.10%) of the employing aqueous systems of the silica-based solar cell (photoelectric conversion efficiency is 0.12%) of the employing methanol system of Comparative Examples one and Comparative Examples two; In addition, greatly reduce the encapsulation requirement of battery, simplified battery preparation technique.
From embodiment one and Comparative Examples three as seen, adopt ionic liquid equally, when Comparative Examples three adopted smooth silicon chip, the photoelectric conversion efficiency of the solar cell that it is made only was 0.003%, does not have practicality.
Embodiment two
At first under the normal temperature n type silicon chip is immersed 5% hydrofluoric acid and 10mM dodecyl sodium sulfate mixed liquor carries out electrochemical etching, etching condition is the bias voltage of 5V, back side illumination, and current density is 10mAcm
-2, etch period 30 minutes can be prepared selective porous silicon on silicon base, subsequently silicon chip is soaked in 10% potassium hydroxide (KOH) to remove the microporous layers on surface; Then silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key; Inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface again; The method of using thermal decomposition then is respectively at the platinum grain of porous silicon and indium and tin oxide film surface deposition 5～10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the porous silicon; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 26.6mAcm of battery
-2, open circuit voltage is 0.3V, and fill factor, curve factor is 0.51, and photoelectric conversion efficiency is 4.03%, and the J-V curve is seen Fig. 4.
Comparative Examples four
At first under the normal temperature n type silicon chip is immersed 5% hydrofluoric acid and 10mM dodecyl sodium sulfate mixed liquor carries out electrochemical etching, etching condition is the bias voltage of 5V, back side illumination, and current density is 10mAcm
-2, etch period 30 minutes can be prepared selective porous silicon on silicon base; Subsequently silicon chip is soaked in 10% potassium hydroxide (KOH) to remove the microporous layers on surface; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then insert saturated chlorobenzene solution, the methyl-magnesium-chloride (CH of phosphorus pentachloride
3MgCl) handling in the tetrahydrofuran solution (1M) methylates its surface; Use the platinum grain of the method for thermal decomposition then at indium and tin oxide film surface deposition 5～10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; The methanol solution that will contain 3mM ferrocene and 0.1mM hexafluorophosphate ferrocene drips number and drops on the silicon chip, and encapsulation gets final product based on the silica-based solar cell of methanol system.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, the short circuit current that records battery is 1.47mAcm
-2, open circuit voltage is 0.22V, and fill factor, curve factor is 0.40, and photoelectric conversion efficiency is 0.13%, and the J-V curve is seen Fig. 5.
Embodiment three
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; With the method for thermal decomposition respectively at the platinum grain of silicon nanowire array surface and indium and tin oxide film surface deposition 5～10nm, then with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film formation Ohm contact electrode; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires, at last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 12.5mAcm of battery
-2, open circuit voltage is 0.272V, and fill factor, curve factor is 0.352, and photoelectric conversion efficiency is 1.20%, and the J-V curve is as shown in Figure 6.
Embodiment four
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then insert saturated chlorobenzene solution, the methyl-magnesium-chloride (CH of phosphorus pentachloride
3MgCl) handling in the tetrahydrofuran solution (1M) methylates its surface; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 16.8mAcm of battery
-2, open circuit voltage is 0.330V, and fill factor, curve factor is 0.218, and photoelectric conversion efficiency is 1.20%, and the J-V curve is as shown in Figure 7.
Comparative Examples five
Change the electrolyte of the solar cell of the foregoing description four into the aqueous solution, other preparation technologies are identical.Measure both stability then, the results are shown in shown in Figure 14.
As can be seen from the figure, the binding energy of silicon oxygen bond is 103ev, and the silicon nanowires that methylates illustrates that low than in the aqueous solution of the oxidized degree of ion liquid system the silicon line that methylates is more stable in ion liquid system.
Embodiment five
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then insert saturated chlorobenzene solution, the hexyl lithium (C of phosphorus pentachloride
6H
13Li) handle in the tetrahydrofuran solution (1M) and make surperficial hexylization; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
Embodiment six
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then insert saturated chlorobenzene solution, the vinyl bromination magnesium (CH of phosphorus pentachloride
2Handle in=CHMgBr) the tetrahydrofuran solution (1M) and make the surface vinylated; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
Embodiment seven
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; Use electrochemical method then, used for electrolyte 5mM K
2PtCl
6With 100mM LiClO
4Mixed liquor is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 12.5mAcm of battery
-2, open circuit voltage is 0.44V, and fill factor, curve factor is 0.27, and photoelectric conversion efficiency is 1.5%, and the J-V curve is as shown in Figure 8.
Embodiment eight
Coat photoresist at silicon face; electron beam exposure accurately is replicated in the silicon face that scribbles photoresist with the nanostructure figure on the photo mask board; fall unwanted photoresist with developing solution dissolution, figure required, that the resist protection is arranged when promptly obtaining corrosion.Utilize the hot steaming method of high vacuum after the silicon face after the processing deposits the thick metal silverskin of one deck 20nm, silicon chip is immersed in the photoresist lift off solution, with resist and the covering silverskin in the above of removing silicon chip surface; Immediately silicon chip is immersed the mixed liquor etching of 0.3M hydrofluoric acid and 4.8M hydrogen peroxide, etching is prepared silicon nanowire array on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Subsequently silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 40.8mAcm of battery
-2, open circuit voltage is 0.27V, and fill factor, curve factor is 0.398, and photoelectric conversion efficiency is 3.39%, and the J-V curve is as shown in Figure 9.
Embodiment nine
At first under the normal temperature n type silicon chip short time is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, the mixed liquor etching that immerses 0.3M hydrofluoric acid and 4.8M hydrogen peroxide more immediately, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Subsequently silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 15.4mAcm of battery
-2, open circuit voltage is 0.188V, and fill factor, curve factor is 0.24, and photoelectric conversion efficiency is 0.7%, and the J-V curve is as shown in figure 10.
Embodiment ten
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode at silicon base coated on bottom side one deck gallium indium alloy again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 25.4mAcm of battery
-2, open circuit voltage is 0.26V, and fill factor, curve factor is 0.404, and photoelectric conversion efficiency is 2.67%, and the J-V curve is as shown in figure 11.
Embodiment 11
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode at silicon base coated on bottom side one deck gallium indium alloy again; Will
With
Mixed and added 50mM ferrocene and 10mM hexafluorophosphate ferrocene redox duplet in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
At room temperature environment, use the xenon lamp simulated solar irradiation, light intensity 100mWcm
-2Under the condition, record the short circuit current 26.0mAcm of battery
-2, open circuit voltage is 0.26V, and fill factor, curve factor is 0.345, and photoelectric conversion efficiency is 2.33%, and the J-V curve is as shown in figure 12.
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
Embodiment 13
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
Embodiment 14
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
Embodiment 16
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
Embodiment 17
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 3: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
Embodiment 18
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on the silica-based solar cell of gas ions.
Embodiment 19
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
Embodiment 21
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least one hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5-10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed and added the redox duplet of iodine in 2: 1 by volume, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid, encapsulation gets final product based on ion liquid silica-based solar cell.
Embodiment 22
At first under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least 1 hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; The method of using thermal decomposition then is respectively at the platinum grain of silicon nanowires and indium and tin oxide film surface deposition 5～10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Will
With
Mixed in 2: 1 by volume, and add the redox duplet of iodine, drip number and drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered on ionic liquid encapsulation; Get final product based on ion liquid silica-based solar cell.
Comparative Examples six
Under the normal temperature n type silicon chip is immersed 0.02M silver nitrate and 5M hydrofluoric acid mixed solution etching, etching is prepared silicon nanowires on n type silicon base; Subsequently silicon chip is soaked at least 1 hour to remove simple substance silver in concentrated nitric acid solution; Silicon chip being immersed the 5M hydrofluoric acid solution makes the surface form the Si:H key again; Then inserting to handle in the tetrahydrofuran solution (1M) of saturated chlorobenzene solution, methyl-magnesium-chloride of phosphorus pentachloride methylates its surface; Use the platinum grain of the method for thermal decomposition then at silicon nanowires and indium and tin oxide film surface deposition 5～10nm; Form Ohm contact electrode with the hot vapour deposition method of high vacuum at silicon base bottom surface depositing Al film again; Drip 8.6M HBr and 0.05M Br
2The mixed solution number drop in above the silicon nanowires; At last the indium tin oxide electro-conductive glass is covered encapsulation; Get final product based on the silica-based solar cell of aqueous systems.
Measure both stability then, the results are shown in shown in Figure 15, as seen from the figure: it is very slow that the current density of the silica-based battery of ion liquid system decays, and the current density of the silica-based battery of aqueous systems decay is very fast, illustrates that the stability of the silica-based battery of ion liquid system will be significantly better than the silica-based battery of aqueous systems.
Claims (7)
1. the solar cell based on silicon nanostructure comprises silicon chip, it is characterized in that: described silicon chip is provided with electro-conductive glass; Be arranged with the insulated enclosure layer between electro-conductive glass and the silicon chip, between electro-conductive glass and silicon chip, constitute electrolyte chamber, be provided with ionic liquid electrolyte in the electrolyte chamber; The described electro-conductive glass and the silicon chip back side are equipped with extraction electrode, constitute ohmic contact electrode structure;
Described ionic liquid electrolyte is selected from one or more among A, B, the C, wherein:
Described A is selected from imidazole type ion liquid
One or more, wherein, s=0～6, Z is selected from I, SCN, BF
4, PF
6, CF
3SO
3, N (CN)
2[N (SO
2CF
3)
2] in a kind of;
Described B is selected from pyridine type ionic liquid
One or more, wherein, n=0～6, R is selected from I, SCN, BF
4, PF
6, CF
3SO
3, N (CN)
2[N (SO
2CF
3)
2] in a kind of;
Described C is selected from pyrrolidines type ionic liquid
One or more, wherein, k=0～6, M is selected from I, SCN, BF
4, PF
6, CF
3SO
3, N (CN)
2[N (SO
2CF
3)
2] in a kind of;
The upper surface of described silicon chip is provided with silicon nanowire array layer or selective porous silicon layer.
2. solar cell according to claim 1 is characterized in that: the height of described silicon nanowire array layer is 1～50 μ m.
3. solar cell according to claim 2 is characterized in that: the height of described silicon nanowire array layer is 3～15 μ m.
4. solar cell according to claim 1 is characterized in that: the silicon nanowire array layer that described silicon nanowire array layer is surperficial alkylation modification.
5. solar cell according to claim 1 is characterized in that: described silicon nanowire array layer is the silicon nanowire array layer that surperficial alkylation modification and metallic particles are modified.
6. solar cell according to claim 1 is characterized in that: the height of described selective porous silicon layer is 3～90 μ m.
7. solar cell according to claim 6 is characterized in that: the height of described selective porous silicon layer is 6～20 μ m.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102592831A (en) * | 2012-01-19 | 2012-07-18 | 苏州大学 | Cobalt ion liquid redox couple and preparation and application thereof |
| CN102779907A (en) * | 2012-08-14 | 2012-11-14 | 常州天合光能有限公司 | Method for preparing high-efficiency heterojunction cells |
| CN108538821A (en) * | 2018-05-14 | 2018-09-14 | 复旦大学 | A kind of all solid state super capacitor and preparation method thereof integrated with si-substrate integrated circuit |
| CN110649083A (en) * | 2019-10-10 | 2020-01-03 | 苏州英凡瑞得光电技术有限公司 | Up-conversion device for realizing conversion from near infrared light to visible light and preparation method thereof |
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| CN101369493A (en) * | 2008-09-23 | 2009-02-18 | 北京师范大学 | Novel silicon nanometer line photoelectrochemistry solar battery |
| CN101436467A (en) * | 2008-12-15 | 2009-05-20 | 中国科学院长春应用化学研究所 | Ion liquid electrolyte containing bi-(fluorosulfonic acid) imines ion and iodine ion, and application thereof |
| CN101572192A (en) * | 2009-06-02 | 2009-11-04 | 彩虹集团公司 | Electrolyte for dye-sensitized solar cell and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101369493A (en) * | 2008-09-23 | 2009-02-18 | 北京师范大学 | Novel silicon nanometer line photoelectrochemistry solar battery |
| CN101436467A (en) * | 2008-12-15 | 2009-05-20 | 中国科学院长春应用化学研究所 | Ion liquid electrolyte containing bi-(fluorosulfonic acid) imines ion and iodine ion, and application thereof |
| CN101572192A (en) * | 2009-06-02 | 2009-11-04 | 彩虹集团公司 | Electrolyte for dye-sensitized solar cell and preparation method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102592831A (en) * | 2012-01-19 | 2012-07-18 | 苏州大学 | Cobalt ion liquid redox couple and preparation and application thereof |
| CN102592831B (en) * | 2012-01-19 | 2014-07-02 | 苏州大学 | Cobalt ion liquid redox couple and preparation and application thereof |
| CN102779907A (en) * | 2012-08-14 | 2012-11-14 | 常州天合光能有限公司 | Method for preparing high-efficiency heterojunction cells |
| CN108538821A (en) * | 2018-05-14 | 2018-09-14 | 复旦大学 | A kind of all solid state super capacitor and preparation method thereof integrated with si-substrate integrated circuit |
| CN110649083A (en) * | 2019-10-10 | 2020-01-03 | 苏州英凡瑞得光电技术有限公司 | Up-conversion device for realizing conversion from near infrared light to visible light and preparation method thereof |
| CN110649083B (en) * | 2019-10-10 | 2022-02-08 | 苏州英凡瑞得光电技术有限公司 | Up-conversion device for realizing conversion from near infrared light to visible light and preparation method thereof |
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