CN102157444A - Manufacturing method of organic electroluminescence element and image display system - Google Patents
Manufacturing method of organic electroluminescence element and image display system Download PDFInfo
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- CN102157444A CN102157444A CN2011100675018A CN201110067501A CN102157444A CN 102157444 A CN102157444 A CN 102157444A CN 2011100675018 A CN2011100675018 A CN 2011100675018A CN 201110067501 A CN201110067501 A CN 201110067501A CN 102157444 A CN102157444 A CN 102157444A
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Abstract
The invention provides a manufacturing method of an organic electroluminescence element, which comprises the following steps: providing a substrate, wherein the substrate comprises a first element region and a second element region; forming an amorphous silicon layer above the substrate; forming a protective film at the part in the second element region, which is positioned above the amorphous silicon layer; performing a quasi-molecular laser annealing process on the amorphous silicon layer so as to convert the amorphous silicon layer into a polysilicon layer; removing the protective film; patterning the polysilicon layer so as to form a first patterned polysilicon layer in the first element region and form a second patterned polysilicon layer in the second element region, wherein the grain size of the first patterned polysilicon layer is larger than that of the second patterned polysilicon layer; and finally forming the organic electroluminescence element.
Description
The application is that application number is 200610137737.3, denomination of invention is divided an application for the application for a patent for invention of " manufacture method of organic electroluminescent element and image display system ".
Technical field
The present invention relates to a kind of manufacture method of electroluminescence element, and particularly relate to a kind of method of manufacturing thin film transistor.
Background technology
Generally speaking, thin-film transistor mainly comprises amorphous silicon film transistor and polycrystalline SiTFT.The array base palte of existing electroluminescence element display (electroluminescent device display) can be divided into luminous zone and circuit region, and the manufacture method of array base palte mainly comprises: form thin-film transistor (thin film transistor; TFT), form pixel electrode and be formed with OLED.Wherein, the technology of thin-film transistor generally includes the following step: form resilient coating, polysilicon layer, gate insulator, grid, interlayer dielectric layer on the whole surface of substrate.After thin-film transistor is finished, then form pixel electrode, and this pixel electrode is with thin-film transistor and is electrically connected.Afterwards, on the luminous zone, form transparent anode, organic luminous layer and reflective negative electrode again, and finish the making of electroluminescence element.Usually, comprise excimer laser annealing (excimer laser anneal in the polycrystalline SiTFT technology; ELA) step so that the amorphous silicon layer on the resilient coating is converted into polysilicon layer, and forms polycrystalline SiTFT.
Yet, because quasi-molecule laser annealing (excimer laser anneal; ELA) the produced thin-film transistor of step (for example, the thin-film transistor that is used to drive (driving TFT)) has very big electronics mobility (mobility) variability, therefore can cause the neither unanimity of luminosity of each sub-pixel, and produce the defective of irregular colour (Mura).
Therefore industry is needed a kind of electroluminescence element that can address the above problem badly.
Summary of the invention
Because the problems referred to above, several preferred embodiments of the present invention is by increasing the mode of diaphragm (protection film), to improve the excessive problem of electrical property difference between thin-film transistor.And, by increasing the mode of diaphragm, can use less passage length (channel length) and the raising aperture opening ratio.
One embodiment of the present invention provides a kind of manufacture method of organic electroluminescent element, comprising: a substrate is provided, and this substrate comprises one first element area and one second element area; Form an amorphous silicon layer in this substrate top; Form this amorphous silicon layer top of the part of a diaphragm in this second element area; This amorphous silicon layer is carried out an excimer laser annealing process, so that this amorphous silicon layer is converted into a polysilicon layer; Remove this diaphragm; And this polysilicon layer of patterning, to form one first patterned polysilicon layer at this first element area, and form one second patterned polysilicon layer at this second element area, wherein the crystallite dimension of this first patterned polysilicon layer forms an organic electroluminescent element by this greater than this second patterned polysilicon layer.
Another preferred embodiment of the present invention provides a kind of manufacture method of organic electroluminescent element, comprising: a substrate is provided, and this substrate comprises one first element area and one second element area; Form first, second patterning amorphous silicon layer in this first, second element area top; Form a diaphragm in this second patterning amorphous silicon layer top; And this first, second patterning amorphous silicon layer carried out an excimer laser annealing process, so that this first, second patterning amorphous silicon layer is converted into first, second patterned polysilicon layer, wherein the crystallite dimension of this first patterned polysilicon layer forms an organic electroluminescent element by this greater than this second patterned polysilicon layer.
The another preferred embodiment of the present invention provides a kind of manufacture method of organic electroluminescent element, comprising: a substrate is provided, and this substrate comprises one first element area and one second element area; Form a patterning diaphragm in this second element area top; Form an amorphous silicon layer in this substrate and this patterning diaphragm top; This amorphous silicon layer is carried out an excimer laser annealing process, to incite somebody to action
This amorphous silicon layer is converted into a polysilicon layer; And this polysilicon layer of patterning, to form one first patterned polysilicon layer at this first element area, and form one second patterned polysilicon layer at this second element area, wherein the crystallite dimension of this first patterned polysilicon layer forms an organic electroluminescent element by this greater than this second patterned polysilicon layer.
In sum, the method for the preferred embodiment of the present invention can be improved excessive problem, the raising aperture opening ratio of electrical property difference between thin-film transistor, and can not increase the complexity of technology.
Description of drawings
Fig. 1 is the equivalent circuit diagram that illustrates a pixel in the active matrix type organic electroluminescent element.
Fig. 2 a～2f is the profile that illustrates the manufacture method of organic electroluminescent element in one embodiment of the present invention.
Fig. 3 a～3f is the profile that illustrates the manufacture method of organic electroluminescent element in another preferred embodiment of the present invention.
Fig. 4 a～4g is the profile that illustrates the manufacture method of organic electroluminescent element in the another preferred embodiment of the present invention.
Fig. 5 a～5g is the profile that illustrates the manufacture method of organic electroluminescent element in the another preferred embodiment of the present invention.
Fig. 6 illustrates the system that is used for show image in one embodiment of the present invention.
The simple symbol explanation
I～switching thin-film transistor zone; II～drive thin film transistors zone; 100～pixel; 102～switching thin-film transistor; 104～drive thin film transistors; 106～Organic Light Emitting Diode; 108～data wire; 110～scan line; 112～storage capacitors; 200～substrate; 202～resilient coating; 204～amorphous silicon layer; 204a～polysilicon layer; 204b～polysilicon layer; 204c～channel region; 204d～source/drain electrode; 204 ' b～first active layer; 204 ' c～channel region; 204 ' d～lightly doped drain; 204 ' e～source/drain electrode; 206～diaphragm; 208～quasi-molecule laser annealing technology; 210～gate dielectric; 212～grid; 214～grid; 216～interlayer dielectric layer; 218～lead; 220～protective layer; 224～transparency electrode; 300～substrate; 302～resilient coating; 304～amorphous silicon layer; 304a～patterning amorphous silicon layer; 304b～patterning amorphous silicon layer; 304c～polysilicon layer; 304d～polysilicon layer; 304 ' a～channel region; 304 ' b～lightly doped drain; 304 ' c～source/drain electrode; 304 ' d～channel region; 304 ' e～source/drain electrode; 306～diaphragm; 308～quasi-molecule laser annealing technology; 309～gate dielectric; 310～grid; 312～grid; 314～interlayer dielectric layer; 316～lead; 318～protective layer; 322～transparency electrode; 400～substrate; 402～patterning diaphragm; 404～resilient coating; 406～amorphous silicon layer; 406a～polysilicon layer; 406c～channel region; 406 ' a～patterned polysilicon layer; 406 ' b～lightly doped drain; 406 ' c～source/drain electrode; 406 ' d～channel region; 406b～patterned polysilicon layer; 406d～source/drain electrode; 408～quasi-molecule laser annealing technology; 410～gate dielectric; 412～grid; 414～grid; 416～interlayer dielectric layer; 418～lead; 420～protective layer; 424～transparency electrode; 500～substrate; 502～patterning diaphragm; 504～resilient coating; 506～amorphous silicon layer; 506a～polysilicon layer; 506c～channel region; 506 ' a, 506b～patterned polysilicon layer; 506 ' b～lightly doped drain; 506 ' c～source/drain electrode; 506 ' d～channel region; 506b～patterned polysilicon layer; 506d～source/drain electrode; 508～quasi-molecule laser annealing technology; 510～gate dielectric; 512～grid; 514～grid; 516～interlayer dielectric layer; 518～lead; 520～protective layer; 524～transparency electrode; 600～electronic component; 610～organic electroluminescent element; 620～display floater; 630～controller; 640～flat panel element; 650～input element; 2000～organic electroluminescent element; 3000～organic electroluminescent element; 4000～organic electroluminescent element.
Embodiment
Fig. 1 is the equivalent circuit diagram that illustrates a pixel in the active matrix type organic electroluminescent element.It should be noted that each " pixel " of indication comprises a switching thin-film transistor (switching thin film transistor) and drive thin film transistors (driving thin film transistor) in specification
As shown in Figure 1, comprise that one in the pixel region (not shown) of a plurality of pixels, a pixel 100 comprises switching thin-film transistor 102, drive thin film transistors 104, Organic Light Emitting Diode 106, data wire 108, scan line 110 and storage capacitors 112.Organic Light Emitting Diode 106 also comprises anode electrode, electroluminescence layer and negative electrode (not shown).It should be noted that switching thin-film transistor 102 and drive thin film transistors 104 are formed in the same pixel.
The 1st embodiment
Fig. 2 a～2f is the profile that illustrates the manufacture method of organic electroluminescent element in one embodiment of the present invention.
Shown in Fig. 2 a; (for example comprising first element area; switching thin-film transistor (switching thin film transistor) area I) and on the substrate 200 of second element area (for example, drive thin film transistors (driving thin film transistor) area I I) form a resilient coating 202, an amorphous silicon layer 204 and a diaphragm 206 in regular turn.Wherein, diaphragm 206 is formed at part amorphous silicon layer 204 tops in the second element area II; And diaphragm 206 comprises with silicon being the material of base material, for example is the laminated construction of silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) or silica and silicon nitride.
Shown in Fig. 2 b, amorphous silicon layer 204 is carried out an excimer laser annealing process 208, with this amorphous silicon layer is converted into a polysilicon layer (204a, 204b); But, in quasi-molecule laser annealing technology 208, because the cause that diaphragm 206 can the reflecting part laser energy, so cause part polysilicon layer 204a to have different crystallization effects with part polysilicon layer 204b.That is to say, because the part polysilicon layer 204b that not protected film 206 covers directly is subjected to the cause of complete excimer laser energy exposure, thus have the crystal grain (grain) of large-size, and its electron mobility is approximately 100cm
2/ V-s.On the other hand, because the cause of diaphragm 206 reflecting part laser energies, thereby the crystallite dimension of the polysilicon layer 204a of below is less, but crystal grain homogeneity (uniformity) but increases, and its electron mobility is approximately less than 100cm
2/ V-s.
Shown in Fig. 2 c, remove diaphragm 206.Then, shown in Fig. 2 d, (204a 204b), and forms first active layer, 204 ' b that is positioned at the switching thin-film transistor area I and the second active layer 204a that is positioned at drive thin film transistors area I I to the patterned polysilicon layer.
Shown in Fig. 2 e, form a gate dielectric 210, to cover patterned polysilicon layer and resilient coatings 202 such as first active layer, the 204 ' b and the second active layer 204a.
Then, shown in Fig. 2 f, carry out subsequent technique in regular turn, to form grid (212,214), interlayer dielectric layer 216, lead 218, cover layer 220, to reach transparency electrode (pixel electrode) 224, because this part is not an emphasis of the present invention, in this description will be omitted.At last, finish an organic electroluminescent element 2000, comprise switching thin-film transistor and drive thin film transistors.Above-mentioned switching thin-film transistor comprises grid 212, gate dielectric 210 and first active layer, 204 ' b; In addition, above-mentioned drive thin film transistors comprises grid 214, gate dielectric 210 and the second active layer 204a.Wherein, first active layer, 204 ' b comprises channel region 204 ' c, lightly doped drain (lightly doped drain) 204 ' d, source/drain electrode 204 ' e; The second active layer 204a comprises channel region 204c and source/drain electrode 204d.
The 2nd embodiment
Fig. 3 a～3f is the profile that illustrates the manufacture method of organic electroluminescent element in another preferred embodiment of the present invention.
Shown in Fig. 3 a, on the substrate 300 that comprises switching thin-film transistor (switching thin film transistor) area I and drive thin film transistors (driving thin film transistor) area I I, form a resilient coating 302 and an amorphous silicon layer 304 in regular turn.
Shown in Fig. 3 b, with amorphous silicon layer 304 patternings, the patterning amorphous silicon layer 304a that is positioned at the patterning amorphous silicon layer 304b of switching thin-film transistor area I and is positioned at drive thin film transistors area I I with formation.
Shown in Fig. 3 c, form the diaphragm 306 on an overlay pattern amorphous silicon layer 304a and partial buffer layer 302 surface.Said protection film 306 comprises with silicon being the material of base material, for example is the laminated construction of silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) or silica and silicon nitride.
Shown in Fig. 3 d, carry out an excimer laser annealing process 308, so that patterning amorphous silicon layer 304a and 304b are converted into polysilicon layer 304c and 304d.Wherein, be positioned at first active layer of the polysilicon layer 304d of switching thin-film transistor area I as the switching thin-film transistor of follow-up formation, the polysilicon layer 304c that is positioned at drive thin film transistors area I I is then as second active layer of the drive thin film transistors of follow-up formation.But, in quasi-molecule laser annealing technology 308, because the cause that diaphragm 306 can the reflecting part laser energy, so cause polysilicon layer 304c to have different crystallization effects with polysilicon layer 304d.In other words, because the polysilicon layer 304b that not protected film 306 covers directly is subjected to the cause of complete excimer laser energy exposure, thus have the crystal grain (grain) of large-size, and its electron mobility is approximately 100cm
2/ V-s.On the other hand, because the cause of diaphragm 306 reflecting part laser energies, thereby the crystallite dimension of the polysilicon layer 304c of below is less, but crystal grain homogeneity (uniformity) but increases, and its electron mobility is approximately less than 100cm
2/ V-s.
Shown in Fig. 3 e, form a gate dielectric 309, to cover patterned polysilicon layer and resilient coatings 302 such as first active layer and second active layer.
Then, shown in Fig. 3 f, carry out subsequent technique in regular turn, to form grid (310,312), interlayer dielectric layer 314, lead 316, cover layer 318, to reach transparency electrode (pixel electrode) 322, because this part is not an emphasis of the present invention, in this description will be omitted.At last, finish an organic electroluminescent element 3000, comprise switching thin-film transistor and drive thin film transistors.Above-mentioned switching thin-film transistor comprises grid 310, gate dielectric 309 and first active layer; In addition, above-mentioned drive thin film transistors comprises grid 312, gate dielectric 309 and second active layer.Wherein, first active layer comprises channel region 304 ' a, lightly doped drain (lightly doped drain) 304 ' b, source/drain electrode 304 ' c; Second active layer comprises channel region 304 ' d and source/drain electrode 304 ' e.
The 3rd embodiment
Fig. 4 a～4g is the profile that illustrates the manufacture method of organic electroluminescent element in the another preferred embodiment of the present invention.
Shown in Fig. 4 a, on the substrate 400 that comprises switching thin-film transistor (switching thin film transistor) area I and drive thin film transistors (driving thin film transistor) area I I, form a patterning diaphragm 402.Above-mentioned patterning diaphragm is positioned at drive thin film transistors area I I.The material of above-mentioned patterning diaphragm 402 comprises silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) or its laminated construction.
Shown in Fig. 4 b, form a resilient coating 404 in patterning diaphragm 402 and substrate 400 tops.Then, form an amorphous silicon layer 406 in resilient coating 404 tops, shown in Fig. 4 c.
Shown in Fig. 4 d, amorphous silicon layer 406 is carried out an excimer laser annealing process 408, with amorphous silicon layer 406 is converted into a polysilicon layer (406a, 406b).
Shown in Fig. 4 e, with polysilicon layer (406a, 406b) patterning, and formation patterned polysilicon layer 406 ' a and 406b.Wherein, be positioned at first active layer of the polysilicon layer 406 ' a of switching thin-film transistor area I as the switching thin-film transistor of follow-up formation, the polysilicon layer 406b that is positioned at drive thin film transistors area I I is then as second active layer of the drive thin film transistors of follow-up formation.But, in quasi-molecule laser annealing technology 408, because the cause that patterning diaphragm 402 can the reflecting part laser energy, so cause patterned polysilicon layer 406 ' a to have different crystallization effects with 406b.In other words, because patterned polysilicon layer 406 ' a directly is subjected to the cause of excimer laser energy exposure, thus have the crystal grain (grain) of large-size, and its electron mobility is approximately 100cm
2/ V-s.On the other hand, because the cause of patterning diaphragm 402 absorption portion laser energies, thereby the crystallite dimension of the patterned polysilicon layer 406 ' a of top is less, but crystal grain homogeneity (uniformity) but increases, and its electron mobility is approximately less than 100cm
2/ V-s.
Shown in Fig. 4 f, form a gate dielectric 410, to cover patterned polysilicon layer and resilient coatings 402 such as first active layer and second active layer.
Then, shown in Fig. 4 g, carry out subsequent technique in regular turn, to form grid (412,414), interlayer dielectric layer 416, lead 418, cover layer 420, to reach transparency electrode (pixel electrode) 424, because this part is not an emphasis of the present invention, in this description will be omitted.At last, finish an organic electroluminescent element 4000, comprise switching thin-film transistor and drive thin film transistors.Above-mentioned switching thin-film transistor comprises grid 412, gate dielectric 410 and first active layer; In addition, above-mentioned drive thin film transistors comprises grid 414, gate dielectric 410 and second active layer.Wherein, first active layer comprises channel region 406 ' d, lightly doped drain (lightly doped drain) 406 ' b, source/drain electrode 406 ' c; Second active layer comprises channel region 406c and source/drain electrode 406d.
The 4th embodiment
Fig. 5 a～5g is the profile that illustrates the manufacture method of organic electroluminescent element in the another preferred embodiment of the present invention.
Shown in Fig. 5 a, on the substrate 500 that comprises switching thin-film transistor (switching thin film transistor) area I and drive thin film transistors (driving thin film transistor) area I I, form a patterning diaphragm 502.Above-mentioned patterning diaphragm is positioned at drive thin film transistors area I I.Above-mentioned patterning diaphragm 502 comprises any metal material.
Shown in Fig. 5 b, form a resilient coating 504 in patterning diaphragm 502 and substrate 500 tops.Then, form an amorphous silicon layer 506 in resilient coating 504 tops, shown in Fig. 5 c.
Shown in Fig. 5 d, amorphous silicon layer 506 is carried out an excimer laser annealing process 508, with amorphous silicon layer 506 is converted into a polysilicon layer (506a, 506b).
Shown in Fig. 5 e, with polysilicon layer (506a, 506b) patterning, and formation patterned polysilicon layer 506 ' a and 506b.Wherein, be positioned at first active layer of the polysilicon layer 506 ' a of switching thin-film transistor area I as the switching thin-film transistor of follow-up formation, the polysilicon layer 506b that is positioned at drive thin film transistors area I I is then as second active layer of the drive thin film transistors of follow-up formation.But, in quasi-molecule laser annealing technology 508, because the patterning diaphragm 502 heat radiations cause fast than other parts, so cause patterned polysilicon layer 506 ' a to have different crystallization effects with 506b.In other words, because patterned polysilicon layer 506 ' a directly is subjected to the cause of complete excimer laser energy exposure, thus have the crystal grain (grain) of large-size, and its electron mobility is approximately 100cm
2/ V-s.On the other hand, the crystallite dimension of the patterned polysilicon layer 506 ' a of patterning diaphragm 502 tops is less, but crystal grain homogeneity (uniformity) but increases, and its electron mobility is approximately less than 100cm
2/ V-s.
Shown in Fig. 5 f, form a gate dielectric 510, to cover patterned polysilicon layer and resilient coatings 502 such as first active layer and second active layer.
Then, shown in Fig. 5 g, carry out subsequent technique in regular turn, to form grid (512,514), interlayer dielectric layer 516, lead 518, cover layer 520, to reach transparency electrode (pixel electrode) 524, because this part is not an emphasis of the present invention, in this description will be omitted.At last, finish an organic electroluminescent element 5000, comprise switching thin-film transistor and drive thin film transistors.Above-mentioned switching thin-film transistor comprises grid 512, gate dielectric 510 and first active layer; In addition, above-mentioned drive thin film transistors comprises grid 514, gate dielectric 510 and second active layer.Wherein, first active layer comprises channel region 506 ' d, lightly doped drain (lightly doped drain) 506 ' b, source/drain electrode 506 ' c; Second active layer comprises channel region 506c and source/drain electrode 506d.
Fig. 6 illustrates the system that is used for show image in one embodiment of the present invention.At this, this system is can be display floater 620, flat panel element 640 or electronic component 600.Above-mentioned organic electroluminescent element can be assemblied in display floater and make organic electric exciting light-emitting diode panel.As shown in Figure 6, display floater 620 comprises organic electroluminescent element 610, for example the organic electroluminescent element 2000,3000 and 4000 shown in Fig. 2 f, 3f and the 4g difference.In other embodiments, flat panel element 640 can be made of display floater 620 and controller 630.In other embodiments, display floater 620 also can constitute the some (being electronic component 600 at this for example) of numerous electronic components.Generally speaking, electronic component 600 can comprise flat panel element 640, and flat panel element 640 has display floater 620, controller 630 and input element 650.And input element 650 couples with flat panel element 640, and provide input signal (for example, signal of video signal) to display floater 620 to produce image.Electronic component 600 can be mobile phone, digital camera, personal digital assistant (personal digital assistant; PDA), display or Portable DVD player on mobile computer, desktop PC, TV, the car.
In sum, several preferred embodiments of the present invention is by excimer laser annealing (excimer laser anneal; ELA) step; on the resilient coating or down or on gate insulator, increase extra diaphragm or metal film, cause thin-film transistor (switching TFT) that is used for switch and the thin-film transistor that is used to drive (driving TFT) to have different crystallization effects.As a result, the active array type organic electroluminescent element with thin-film transistor of above-mentioned different crystallization effect then has drive current uniformly, and avoids producing the defective of irregular colour (Mura).
Claims (10)
1. the manufacture method of an organic electroluminescent element comprises:
Substrate is provided, and this substrate comprises the pixel region that contains a plurality of pixels, wherein comprises first element area and second element area in each pixel;
Form the patterning diaphragm in this second element area top;
Form amorphous silicon layer in this substrate and this patterning diaphragm top;
This amorphous silicon layer is carried out an excimer laser annealing process so that this amorphous silicon layer is converted into polysilicon layer; And
This polysilicon layer of patterning, to form the first patterned polysilicon layer at this first element area, and form the second patterned polysilicon layer at this second element area, wherein the crystallite dimension of this first patterned polysilicon layer is greater than this second patterned polysilicon layer, form organic electroluminescent element by this
Wherein the coefficient of heat conduction of this patterning diaphragm is greater than the coefficient of heat conduction of this substrate and this amorphous silicon layer.
2. the manufacture method of organic electroluminescent element as claimed in claim 1, wherein this patterning diaphragm comprises metal material.
3. the manufacture method of organic electroluminescent element as claimed in claim 1 also comprises:
After the step of this this polysilicon layer of patterning, form gate dielectric, to cover this patterned polysilicon layer and this substrate.
4. the manufacture method of organic electroluminescent element as claimed in claim 1, wherein this first, second patterned polysilicon layer is respectively first active layer that is positioned at this first element area and second active layer that is positioned at this second element area.
5. the manufacture method of organic electroluminescent element as claimed in claim 1 wherein forms the switching thin-film transistor element, and forms the drive thin film transistors element in this second element area in this first element area.
6. the manufacture method of organic electroluminescent element as claimed in claim 5 also comprises:
Organic Light Emitting Diode, wherein this Organic Light Emitting Diode forms with this drive thin film transistors element and is electrically connected.
7. image display system comprises:
Organic electroluminescent element comprises:
The top has the substrate of pixel region, and wherein this pixel region comprises pixel a plurality of times, and each time pixel comprises:
Switch region and driving district;
Switching thin-film transistor places this switch region; And
Drive thin film transistors; place this driving district; and comprise grid at least, be positioned at this grid below polysilicon layer, with the patterning diaphragm that is positioned at this polysilicon layer below, wherein this patterning diaphragm is a metal level and between this polysilicon layer and this substrate
The coefficient of heat conduction of this patterning diaphragm is greater than the coefficient of heat conduction of this substrate and this polysilicon layer.
8. image display system as claimed in claim 7 also comprises display floater, and wherein this organic electroluminescent element forms the some of this display floater.
9. image display system as claimed in claim 8 also comprises electronic component, and wherein this electronic component comprises:
This display floater; And
Be coupled to the input unit of this display floater, and this input unit is in order to providing input signal to this display floater, thereby this display floater show image.
10. image display system as claimed in claim 9, wherein this electronic component is display or a portable digital versatile disc player on mobile phone, digital camera, personal digital assistant, mobile computer, desktop PC, TV, the car.
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| CN201110067501.8A CN102157444B (en) | 2006-10-27 | 2006-10-27 | The manufacture method of organic electroluminescent element and image display system |
| CN2006101377373A CN101170076B (en) | 2006-10-27 | 2006-10-27 | Making method for organic EL part and image display system |
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| CN1379482A (en) * | 2001-03-30 | 2002-11-13 | 三洋电机株式会社 | Semiconductor device and active matrix type dispaly apparatus |
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| CN1379482A (en) * | 2001-03-30 | 2002-11-13 | 三洋电机株式会社 | Semiconductor device and active matrix type dispaly apparatus |
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Address after: Hsinchu Science Park, Taiwan, China Applicant after: Innolux Display Group Address before: Miaoli County, Taiwan, China Applicant before: Chimei Optoelectronics Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: QIMEI ELECTRONIC CO LTD TO: INNOLUX DISPLAY CORPORATION |
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