CN102154619B - 真空高温快速加热装置 - Google Patents
真空高温快速加热装置 Download PDFInfo
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- CN102154619B CN102154619B CN 201110083270 CN201110083270A CN102154619B CN 102154619 B CN102154619 B CN 102154619B CN 201110083270 CN201110083270 CN 201110083270 CN 201110083270 A CN201110083270 A CN 201110083270A CN 102154619 B CN102154619 B CN 102154619B
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- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
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CN 201110083270 CN102154619B (zh) | 2011-04-02 | 2011-04-02 | 真空高温快速加热装置 |
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CN 201110083270 CN102154619B (zh) | 2011-04-02 | 2011-04-02 | 真空高温快速加热装置 |
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CN102154619A CN102154619A (zh) | 2011-08-17 |
CN102154619B true CN102154619B (zh) | 2013-03-13 |
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CN 201110083270 Active CN102154619B (zh) | 2011-04-02 | 2011-04-02 | 真空高温快速加热装置 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104071971B (zh) * | 2014-05-14 | 2017-07-11 | 中国科学院广州能源研究所 | 一种用于片状基片上热色涂层材料的快速退火装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2695449Y (zh) * | 2004-05-22 | 2005-04-27 | 温振超 | 真空辐射式加热器 |
US7431807B2 (en) * | 2005-01-07 | 2008-10-07 | Universal Display Corporation | Evaporation method using infrared guiding heater |
CN201305624Y (zh) * | 2008-05-21 | 2009-09-09 | 兰州大学 | 薄膜制备装置 |
CN202054885U (zh) * | 2011-04-02 | 2011-11-30 | 张家港意发功率半导体有限公司 | 真空高温快速加热装置 |
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2011
- 2011-04-02 CN CN 201110083270 patent/CN102154619B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2695449Y (zh) * | 2004-05-22 | 2005-04-27 | 温振超 | 真空辐射式加热器 |
US7431807B2 (en) * | 2005-01-07 | 2008-10-07 | Universal Display Corporation | Evaporation method using infrared guiding heater |
CN201305624Y (zh) * | 2008-05-21 | 2009-09-09 | 兰州大学 | 薄膜制备装置 |
CN202054885U (zh) * | 2011-04-02 | 2011-11-30 | 张家港意发功率半导体有限公司 | 真空高温快速加热装置 |
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CN102154619A (zh) | 2011-08-17 |
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C06 | Publication | ||
PB01 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SUZHOU TONGGUAN MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: ZHANGJIAGANG EVER POWER SEMICONDUCTOR CO., LTD. Effective date: 20140304 |
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TR01 | Transfer of patent right |
Effective date of registration: 20140304 Address after: Suzhou City, Jiangsu province 215600 yangshe town Zhangjiagang Chenghang Dongyuan Town Road and road intersection southwest corner room 1 Patentee after: Suzhou Tongguan Microelectronics Co., Ltd. Address before: 215600, Zhangjiagang Economic Development Zone, Suzhou, Jiangsu province (B building, overseas student Pioneer Park, 1 Cathay Pacific Road) Patentee before: Zhangjiagang Ever Power Semiconductor Co.,Ltd. |
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TR01 | Transfer of patent right |