CN102148062A - Memory with self-testing function - Google Patents
Memory with self-testing function Download PDFInfo
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- CN102148062A CN102148062A CN201010117029XA CN201010117029A CN102148062A CN 102148062 A CN102148062 A CN 102148062A CN 201010117029X A CN201010117029X A CN 201010117029XA CN 201010117029 A CN201010117029 A CN 201010117029A CN 102148062 A CN102148062 A CN 102148062A
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Abstract
The invention discloses a memory with the self-testing function, which comprises a testing unit, a storage unit and a comparison module. The testing unit generates a test reading signal; a first storage block of the storage unit stores a storage datum and outputs the storage datum according to the test reading signal; a second storage block of the storage unit stores a comparison characteristic value corresponding to the storage datum; the comparison module generates a testing characteristic value according to the storage datum output by the storage unit, compares the testing characteristic value and the comparison characteristic value and outputs a testing result so as to judge whether the storage unit is correct. Therefore, in the memory, the storage unit is divided into two storage blocks to respectively store the storage datum and the comparison characteristic value, so as to save testing time and cost and prevent hardware data from being consumed.
Description
Technical field
The present invention relates to a kind of storer, particularly relate to a kind of storer with selftest function.
Background technology
Because the amount of capacity of storer constantly increases now, the time that causes on testing memory being spent is also along with increase.The test duration increase is a kind of extra cost for memory manufacturer.Therefore, the ability of Validity Test storer is not only normally very important for guaranteeing memory operation, and also very important for saving cost.
Now the dealer general (Built In Self Test, BIST) whether technology to be used to testing memory in affiliated technical field normal with built-in self-test.At general memory built-in self-test (Memory Built In Self Test, MBIST) in the framework, can be by a built-in self-test circuit test storer, wherein this built-in self-test circuit can be with a series of pattern (pattern, or be called " character string type ") offer this storer (test of for example, march formula (march test) or checkerboard type pattern (Checkerboard pattern)).This built-in self-test circuit is relatively exported and an expectation response then.Therefore because described pattern has height rule, use comparer can directly compare described output and reference data, to guarantee to be marked as a test crash from an errored response of this storer from described storer.
Some prior aries are exposed in: files such as the U.S.'s 2004/0193984 publication number and the U.S.'s the 6th, 564,348 patent No.s.
Yet, during general traditional built-in self-test circuit test one ROM (read-only memory), all be to utilize compress technique that a large amount of storage datas in the ROM (read-only memory) are compressed into a test feature value, and this test feature value is stored in the digital circuit of chip in advance, when volume production is tested, this test feature value is read and compare with the comparison eigenwert that is stored in advance in the digital circuit.Yet when find needing the storage data in the change ROM (read-only memory) in the process of checking, layout (layout) is revised the pre-stored values in the digital circuit of chip again, and the beginning can corresponding change be stored in the comparison eigenwert of the digital circuit of chip.So, above-mentioned conventional art (for example: the time chip design change) expends limited hardware resource (digital circuit of chip that need be extra stores this comparison eigenwert in advance) and engineering design with needs.
Therefore, how to propose the storer that a kind of novelty has the selftest function, not only can avoid expending the limited hardware resource, and can shorten its engineering time and test duration, begin to solve the above problems at the problems referred to above.
Summary of the invention
One of purpose of the present invention, be to provide a kind of storer with selftest function, it is cut apart two by a storage unit and stores block, to store a storage data and a comparison eigenwert respectively, saves test duration, cost and avoids expending hardware data and reach.
One of purpose of the present invention, be to provide a kind of storer with selftest function, it stores block by second is a FA final address that is positioned at the storage address of storage unit 20, with the time of shortening modification storer, and then increases the efficient of revising storer.
Storer with selftest of the present invention comprises a test cell, a storage unit, a compression unit and a comparing unit.Test cell produces and exports a test reading signal; Storage unit has one first and stores block and one second storage block, and first stores block stores a storage data, and according to test reading signal output storage data, the second storage block stores a comparison eigenwert of corresponding storage data; Compression unit compresses storage data and produces a test feature value; Comparing unit contrastive test eigenwert is exported a comparison result with the comparison eigenwert, learns with the foundation comparative result whether this storer is normal.So, the present invention can reach and save test duration, cost and avoid expending hardware data.
Description of drawings
Fig. 1 is the calcspar of a preferred embodiment of the present invention; And
Fig. 2 is the calcspar of another preferred embodiment of the present invention.
The reference numeral explanation
The present invention:
10 test cells
100 control modules
102 signal generation units
20 storage unit
200 first store block
202 second store block
30 comparison modules
300 compression units
302 comparing units
40 switch units
Embodiment
Further understand and understanding for making architectural feature of the present invention and the effect that realized had, existing with preferred embodiment and cooperate detailed explanation, illustrate as after.
See also Fig. 1, Fig. 1 is the calcspar of a preferred embodiment of the present invention.As shown in the figure, the storer with selftest function of the present invention comprise a test cell 10, a storage unit 20, with a comparison module 30.Test cell 10 is in order to produce a test reading signal, and output test reading signal is to storage unit 20, one embodiment, test cell 10 can be a memory built self-test circuit (Memory Built In Self Test, MBIST), if when this storer was the ROM storer, then this test cell 10 was a ROM memory built self-test circuit (ROM BIST).Another embodiment, this test cell 10 comprise a control module 100 and a signal generation unit 102.Control module 100 is in order to producing a controlling signal, and controlling signal is sent to signal generation unit 102, after signal generation unit 102 receives controlling signal, then produces test reading signal (pattern signal).One embodiment, this signal generation unit 102 are a mode signal generator (pattern generator).
In addition, the comparing module 30 with storer of selftest function of the present invention comprises a compression unit 300 and a comparing unit 302.Compression unit 300 is compression storage datas and produce the test feature value, wherein, a preferred embodiment of the compression unit 300 of this enforcement can be the value register of input feature vector more than (Multiple Input Signature Register, MISR).Comparing unit 302 contrastive test eigenwerts produce test result with the comparison eigenwert, whether correct to judge that first of storage unit 20 stores the stored storage data of block 200, be whether comparing unit 302 contrastive test eigenwerts of the present invention are identical with the comparison eigenwert, and judge whether first of storage unit 20 stores the stored storage data of block 200 correct, just, the test feature value that produces when compression unit 300 is inequality during in the comparison eigenwert, then represents the storage data mistake that storage unit 20 is stored; When the test feature value of compression unit 300 generations is same as the comparison eigenwert, represent that then storage unit 20 stored storage datas are correct.
Moreover, because storage unit 20 of the present invention is a ROM (read-only memory) (Read On Memory, ROM), so, when the storage data that needs because of various factors to revise in the storage unit 20, then need the corresponding comparison eigenwert of revising, adding storage unit 20 is a ROM (read-only memory), because the present invention is divided into first with storage unit 20 to store the block 200 and the second storage block 202, to store this storage data and comparison eigenwert respectively, in other words, make this storage data and this comparison eigenwert can be stored in same storage unit 20, and revise the stored storage data of storage unit 20 at needs, and can revise the comparison eigenwert by simultaneously corresponding storage data, save the test duration to reach, cost with avoid expending hardware data.
From the above, second of storage unit 20 of the present invention store block 202 can be positioned at this storage unit 20 the storage address particular address (for example: FA final address), make and revise first of storage unit 20 at needs and store the stored storage data of block 200, and convenient corresponding second of the storage unit 20 of revising stores the stored comparison eigenwert of block 202, with the time of shortening modification storer, and then increase the efficient of revising storer.
See also Fig. 2, Fig. 2 is the calcspar of another preferred embodiment of the present invention.As shown in the figure, the embodiment difference of present embodiment and Fig. 1 is that the storer with selftest function of present embodiment also comprises a switching unit 40.Because a read mode of the storer of present embodiment comprises a test pattern and a mode standard (normal mode), the test pattern of storer is in order to when storer appears on the scene, to the test that storer carried out, the mode standard of storer is in order to after memory test finishes, and storer is normally operated.So the read mode of switchable memory is test pattern or mode standard to switch unit 40 according to a switching signal.This switching signal be by a control circuit (be not illustrated in graphic in) produce.This control circuit operates in this test pattern or this mode standard (normal mode) in order to control this memory bank.When the read mode of the storage unit 20 of storer is test pattern, switch unit 40 transmits the test reading signal to storage unit 20, to export storage data to comparing module 30, and when the read mode of the storage unit 20 of storer during in mode standard, switch unit 40 transmits system's reading signal to storage unit 20, to export storage data to the storer outside.Wherein, switch unit 40 can be a test wrapper (Test Collar) or a multiplexer.
In sum, the present invention is cut apart two by storage unit and is stored block, to store storage data and comparison eigenwert respectively, make this storage data and this comparison eigenwert can be stored in same storage unit 20, revise this storage data simultaneously and, save test duration, cost and avoid expending hardware data to reach and reach to this comparison eigenwert that should storage data.
The above only is a preferred embodiment of the present invention, be not to be used for limiting scope of the invention process, all equalizations of doing according to the described shape of claim of the present invention, structure, feature and spirit change and modify, and all should be included in the claim of the present invention.
Claims (10)
1. storer with selftest function, it comprises:
One test cell produces a test reading signal;
One storage unit, couple this test cell, this storage unit is distinguished into one first and stores block and one second storage block, this first storage block stores a storage data, and export this storage data according to this test reading signal, this second stores block and stores a comparison eigenwert that should storage data;
One comparing module couples this storage unit, and this storage data according to the output of this storage unit produces a test feature value, and compares this test feature value and this comparison eigenwert and export a test result.
2. the storer with selftest function as claimed in claim 1, wherein, this storage data that this first storage block is stored and this stored comparison eigenwert of this second storage block are to be updated simultaneously.
3. the storer with selftest function as claimed in claim 1, wherein this comparing module comprises:
One compression unit compresses this storage data and produces this test feature value; And
One comparing unit is compared this test feature value and this comparison eigenwert and is exported this test result.
4. the storer with selftest function as claimed in claim 1, it also comprises:
One switches the unit, and according to a switching signal, a read mode that switches this storer is a test pattern or a mode standard.
5. the storer with selftest function as claimed in claim 4, wherein this switch unit is a test wrapper or a multiplexer.
6. the storer with selftest function as claimed in claim 1, wherein this test cell is a memory built self-test circuit.
7. the storer with selftest function as claimed in claim 1, wherein this storage unit is a ROM (read-only memory).
8. the storer with selftest function as claimed in claim 3, wherein this compression unit is more than one input mark registers.
9. method of testing with storer of selftest function, it comprises:
Produce a test reading signal;
According to this test reading signal, export this storage data,
Generation is to a comparison eigenwert that should storage data, and wherein, this storage data and this comparison eigenwert are to be stored in the same storage unit;
This storage data according to this storage unit output produces a test feature value; And
Compare this test feature value and this comparison eigenwert and export a test result.
10. method of testing as claimed in claim 9, wherein, this storage unit is distinguished into one first and stores block and one second storage block, and this first storage block stores this storage data, and this second storage block stores this comparison eigenwert.
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| CN201010117029XA CN102148062A (en) | 2010-02-09 | 2010-02-09 | Memory with self-testing function |
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| CN201010117029XA CN102148062A (en) | 2010-02-09 | 2010-02-09 | Memory with self-testing function |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024066A (en) * | 2016-05-06 | 2016-10-12 | 北京润科通用技术有限公司 | SRAM detection method and system |
| CN110120242A (en) * | 2019-05-05 | 2019-08-13 | 珠海市杰理科技股份有限公司 | Method for testing memory, device, computer equipment and storage medium |
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| CN101236790A (en) * | 2008-03-07 | 2008-08-06 | 北京中星微电子有限公司 | Chip with integrated read-only memory and built-in self-test system and its method |
| CN101339811A (en) * | 2008-08-14 | 2009-01-07 | 四川登巅微电子有限公司 | Build-in self-test method of memory |
| US20090254788A1 (en) * | 2008-04-03 | 2009-10-08 | Cervantes Daniel W | Techniques for Logic Built-In Self-Test Diagnostics of Integrated Circuit Devices |
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2010
- 2010-02-09 CN CN201010117029XA patent/CN102148062A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101236790A (en) * | 2008-03-07 | 2008-08-06 | 北京中星微电子有限公司 | Chip with integrated read-only memory and built-in self-test system and its method |
| US20090254788A1 (en) * | 2008-04-03 | 2009-10-08 | Cervantes Daniel W | Techniques for Logic Built-In Self-Test Diagnostics of Integrated Circuit Devices |
| CN101339811A (en) * | 2008-08-14 | 2009-01-07 | 四川登巅微电子有限公司 | Build-in self-test method of memory |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024066A (en) * | 2016-05-06 | 2016-10-12 | 北京润科通用技术有限公司 | SRAM detection method and system |
| CN110120242A (en) * | 2019-05-05 | 2019-08-13 | 珠海市杰理科技股份有限公司 | Method for testing memory, device, computer equipment and storage medium |
| CN110120242B (en) * | 2019-05-05 | 2021-06-18 | 珠海市杰理科技股份有限公司 | Memory test method and device, computer equipment and storage medium |
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Application publication date: 20110810 |