CN102148015B - Method and system for driving interferometric modulators - Google Patents

Abstract

Systems and methods for driving a display of MEMS devices are disclosed. In one embodiment, a display includes an array (30) having a plurality of interferometric modulators, and a driving circuit (22) coupled to said array, said driving circuit (22) configured to provide actuation signals to drive said array (30) based on a temperature of the display. In another embodiment, a method of driving an array having a plurality of interferometric modulators configured into a display is disclosed, where the method includes sensing the temperature at a predetermined location in display, communicating a signal based on the sensed temperature to a display driver, generating an actuation signal to drive said display based on the received signal, and providing the actuation signal to the array.

Description

Be used to drive the method and system of interferometric modulator

The relevant information of dividing an application

This case is to divide an application.Female case of this division be that on 09 23rd, 2005, application number are 200580031458.2 the applying date, denomination of invention is the application for a patent for invention case of " being used to drive the method and system of interferometric modulator ".

Technical field

Technical field of the present invention relates to MEMS (MEMS).

Background technology

MEMS (MEMS) comprises micromechanical component, activator appliance and electronic component.Micromechanical component can adopt deposition, etching or other several portions that can etch away substrate and/or institute's deposited material layer maybe can add several layers and process with the micromachined technology that forms electricity and electromechanical assembly.One type MEMS device is called as interferometric modulator.Term interferometric modulator used herein or interferometric light modulator are meant that a kind of use principle of optical interference comes optionally to absorb and/or catoptrical device.In certain embodiments, an interferometric modulator can comprise the pair of conductive plate, wherein one or the two all can be transparent whole or in part and/or be reflectivity, and can relative motion when applying suitable electric signal.In a certain embodiments, plate can comprise the quiescent layer that is deposited on the substrate, and another plate can comprise the metallic film that separates through an air gap and this quiescent layer.More specify like this paper institute, one of them plate can change the optical interference that is incident in the light on the interferometric modulator with respect to the position of another plate.Said apparatus is with a wide range of applications, and in this technology, utilizes and/or revises the characteristic of these types of devices so that its characteristic can be used for improving existing product and makes still undeveloped at present new product will be rather useful.

Summary of the invention

System of the present invention, method and device all have many aspects, and arbitrary single aspect all can not determine the characteristic that it is desired separately.Now, its main characteristic is carried out brief description, this not delimit the scope of the invention.Checking this explanation, and especially reading title for after the part of " embodiment ", how people provides the advantage that is superior to other display device if can understanding characteristic of the present invention.

In one embodiment, a kind of display is provided, it comprise an interferometric modulator array, and one be coupled to said array driving circuit, said driving circuit is through being configured to be provided for driving according to temperature the activation signal of said array.

In another embodiment, a kind of display is provided, it comprises: first interferometric modulator array; One or more second interferometric modulators; One metering circuit, it is through being configured to measure the activation voltage of said one or more second interferometric modulators; And first driving circuit; It is coupled to said first interferometric modulator array and through being configured to according to be provided for driving the drive signal of said first interferometric modulator array by the measured activation voltage of said metering circuit; Wherein said first interferometric modulator array and said one or more second interferometric modulator have one first and one second electomechanical response respectively, and wherein said first and second electomechanical response has a predetermined relationship each other.

In another embodiment; A kind of method of driving one display interferometric modulator array is provided; It comprises: the activation voltage of measuring one or more test interferometric modulators; Confirm the appropriate driving signal parameter according to measured activation voltage and according to the predetermined relationship between said one or more test interferometric modulators and the said display interferometric modulator, and confirm drive signal to be provided to said display interferometric modulator array according to said.

In another embodiment, a kind of method that is used to make display is provided, it comprises: form one first interferometric modulator array; Form one or more second interferometric modulators that have a predetermined relationship with said first interferometric modulator array; One metering circuit is provided, and it is through being configured to measure the activation voltage of said one or more second interferometric modulators; And one drive circuit is provided, it is coupled to said first interferometric modulator array and through being configured to according to the drive signal that is provided for driving said first interferometric modulator array by the measured activation voltage of said metering circuit.

In another embodiment, a kind of method that drives an array is provided, said array has a plurality of interferometric modulators that are configured to a display, and said method comprises: the temperature in precalculated position in the said display of sensing; One sensor signal based on said institute sensing temperature is sent to a display driver; In said display driver, produce a drive signal according to said sensor signal; And said drive signal is provided to said array.

In another embodiment, a kind of display is provided, it comprises: display member, and it is used for display image data; And member is provided, it is used for being provided for driving according to temperature the activation signal of said display member.

In another embodiment, a kind of method of manufacturing one display is provided, it comprises: formation one comprises the array of a plurality of interferometric modulators; And one drive circuit is coupled to said array, said driving circuit is through being configured to be provided for driving according to the temperature of said display the activation signal of said array.

In another embodiment, a kind of display is provided, it comprises: first member that is used for light modulated; Second member that is used for light modulated; Measure member, it is used to measure the activation voltage of the said second modulation member; And drive member; It is used to drive the said first modulation member; Said drive member is coupled to the said first modulation member and through being configured to according to the drive signal that is provided for driving the said first modulation member by the measured activation voltage of said measurement member; Wherein said first modulation member and the said second modulation member have first and second electomechanical response respectively, and said first and second electomechanical response has predetermined relation each other.

In another embodiment, a kind of method of driving one display is provided, it comprises: the shift voltage of measuring one or more interferometric modulators in the display; Confirm to be used to operate the driving voltage of said one or more interferometric modulators according to said measured shift voltage; And said definite driving voltage is provided to said one or more interferometric modulators.

In another embodiment, the system of a kind of driving one display is provided, it comprises: a sensor circuit, the shift voltage of its one or more interferometric modulators in a plurality of interferometric modulators that are configured to measure a display; And one drive circuit, it is coupled to said sensor circuit and confirms to be used to operate the driving voltage of said a plurality of interferometric modulators and further said definite driving voltage is provided to said a plurality of interferometric modulators through being configured to according to said measured shift voltage through being configured to.

In another embodiment; A kind of system that is used to drive an interferometric modulator display is provided; It comprises: measure member, it is used for measuring the shift voltage of the one or more interferometric modulators of a plurality of interferometric modulators that form an interferometric modulator array of display at least a portion; Confirm member, it is used for confirming to be used to operate according to said measured shift voltage the driving voltage of the one or more interferometric modulators of a plurality of interferometric modulators; And member is provided, it is used for said definite driving voltage the said one or more interferometric modulators to a plurality of interferometric modulators being provided.

In another embodiment, provide a kind of make one be used for the system of driving display method, it comprises: provide one comprise a plurality of interferometric modulators display; One sensor circuit is coupled to said display, the shift voltage of said sensor circuit one or more interferometric modulators in a plurality of interferometric modulators that are configured to measure said display; And one drive circuit is coupled to said display and said sensor circuit; Said sensor circuit is through being configured to confirm that according to said measured shift voltage one is used to operate the driving voltage of said a plurality of interferometric modulators, and further said definite driving voltage provided to said a plurality of interferometric modulators through being configured to.

In another embodiment, the method that provides a kind of driving to have the display of an interferometric modulator array, it comprises the activation signal that is provided for driving said array according to temperature.

Description of drawings

Fig. 1 is first-class axle figure; It schematically illustrates the part of an embodiment of an interferometric modulator display; Wherein one of first interferometric modulator removable reflection horizon is in slack position, and a removable reflection horizon of second interferometric modulator is in the actuated position.

Fig. 2 is a system block diagram, and it shows that schematically one comprises an embodiment of the electronic installation of one 3 * 3 interferometric modulator displays.

Fig. 3 is the synoptic diagram of removable mirror position in the exemplary embodiment of interferometric modulator shown in Figure 1 with the relation of the voltage that applies.

Fig. 4 is one group of synoptic diagram that can be used for driving the row and column voltage of interferometric modulator display.

An exemplary frame of display data in Fig. 5 A graphic extension 3 * 3 interferometric modulator displays shown in Figure 2.

Fig. 5 B demonstration can be used for writing the capable signal of frame shown in Fig. 5 A and an exemplary sequential chart of column signal.

Fig. 6 A and 6B are system block diagrams, its schematically graphic extension one comprise the embodiment of the visual display unit of a plurality of interferometric modulators.

Fig. 7 A is the schematic cross sectional view of a device shown in Figure 1.

Fig. 7 B is the schematic cross sectional view of the alternate embodiment of an interferometric modulator.

Fig. 7 C is the schematic cross sectional view of another alternate embodiment of an interferometric modulator.

Fig. 7 D is the schematic cross sectional view of an alternate embodiment again of an interferometric modulator.

Fig. 7 E is the schematic cross sectional view of the another alternate embodiment of an interferometric modulator.

Fig. 8 is the skeleton view of an interferometric modulator, a plurality of layers in its removable reflection horizon of graphic extension.

Fig. 9 is a curve map, the WV of its graphic extension interferometric modulator and the relation between the temperature.

Figure 10 is a system block diagram, and its graphic extension one comprises an embodiment of the electronic installation of one 3 * 3 interferometric modulator displays and temperature sensor.

Figure 11 is a system block diagrams, and its graphic extension one comprises another embodiment of the electronic installation of one 3 * 3 interferometric modulator displays and temperature sensor.

Figure 12 is a system block diagrams, and its graphic extension one comprises another embodiment of the electronic installation of one 3 * 3 interferometric modulator displays and temperature sensor.

Figure 13 is a system block diagrams, and its graphic extension one comprises an embodiment of the electronic installation of one 3 * 3 interferometric modulator displays and a test interferometric modulator.

Figure 14 is the time (x axle) and the graph of relation of electric capacity and voltage (y axle), and its graphic extension is because of the electric capacity of the interferometric modulator that applies voltage and cause.

Figure 15 is a process flow diagram, a kind of method that drives an array according to institute's sensing temperature of its graphic extension.

Embodiment

Below specify is to some embodiments of the invention.Yet the present invention can implement through different ways.In this explanation, can be with reference to accompanying drawing, in the accompanying drawings, identical parts use identical number-mark from start to finish.Find out easily according to following explanation, each embodiment can be in office once being configured to display image-no matter be dynamic image (for example video) or still image (for example rest image), no matter be character image or picture-device in implement.More specifically, the present invention is contained: each embodiment can implement in inferior numerous kinds of electronic installations or is associated with these electronic installations for example (but being not limited to): mobile phone, wireless device, personal digital assistant (PDA), hand-held or portable computer, gps receiver/omniselector, camera, MP3 player, video camera, game console, wrist-watch, clock, counter, TV monitor, flat-panel monitor, computer monitor, automotive displays (for example mileometer display etc.), driving cabin control device and/or display, camera scenery display (the for example rear view cameras display of vehicle), electronic photo, electronics billboard or label, projector, building structure, packing and aesthetic structures (the for example image display on jewelry).The MEMS device that has similar structures with MESE device described herein also can be used for non-demonstration application, for example is used for electronic switching device.

By control system apply for modulator being placed the required voltage swing of actuated state can change because of the unfavorable duty factor that many kind of meeting influences interferometric modulator, these disadvantageous duty factors for example comprise that temperature, the change of interferometer electromechanical property, electric charge gather, and the physical abrasion of mechanical type minute surface.As institute more specifies hereinafter, and activation voltage is as two voltages-Lie bias voltage (V _{Bias voltage}) with the row voltage-combination be applied to interferometric modulator.Change, the electric charge of interferometer electromechanical property gather, and the physical abrasion of mechanical type minute surface usually only after a large amount of the use or after measuring sometime, just influencing activation voltage.The working temperature of interferometric modulator then can influence the characteristic in removable reflection horizon 14 immediately, thereby big temperature variation can cause the marked change of activation voltage.Environmental baseline according to using interferometric modulator decide-and for example (Arizona) is contained in the display on the device that is placed on the automobile instrument panel, perhaps is exposed in the winter time in the display on the device in the subzero temperature in the Arizona State during summer, and significant temperature variation just may take place at several hrs even in a few minutes in interferometric modulator.In one embodiment of this invention, a sensor comprises monitoring existing temperature on a position in the device of display of interferometric modulator having one, and to the driving circuit of said display the signal with temperature correlation is provided.Said driving circuit-its use makes institute's sensing temperature and is the predetermined information that is associated at the required necessary voltage of operation display under the different temperatures-through coming driving display under various temperature, to work according to it from signal adjustment bias voltage that sensor receives.

A kind of interferometric modulator display embodiment that comprises interfere type MEMS display element of graphic extension in Fig. 1.In these devices, pixel is in bright or dark state.Under bright (" opening (on) " or " opening (open) ") state, display element reflexes to the user with most of incident visible light.Be in dark (" closing (off) " or " closing (closed) ") state following time, display element reflects the incident visible light to the user hardly.Look various embodiment and decide, can put upside down the light reflectance properties that " opening (on) " reaches " closing (off) " state.The MEMS pixel can be through being configured to mainly reflection under selected color, thereby except that black and white, also can realize colored demonstration.

Fig. 1 is first-class axle figure, and it illustrates two neighbors in a series of pixels of a visual displays, and wherein each pixel comprises a MEMS interferometric modulator.In certain embodiments, an interferometric modulator display comprises the row/column array that is made up of these interferometric modulators.Each interferometric modulator includes a pair of reflection horizon, and this is positioned to each other to have at least one variable-sized resonant optical mode chamber at a distance of a variable and controlled distance to form one to the reflection horizon.In one embodiment, one of them reflection horizon can be moved between the two positions.Be called in this article on the primary importance of slack position, this removable reflection horizon is positioned the local reflex layer distance far away relatively that distance one is fixed.Be called in this article on the second place of actuated position, removable reflection horizon is positioned to more contiguous local reflex layer.Decide position according to removable reflection horizon, from the incident light of this two layers reflection with mutually long or mutually the mode of disappearing interfere, thereby form the mass reflex or the non-reflective state of each pixel.

The pixel array portion that in Fig. 1, shows comprises two adjacent interferometric modulator 12a and 12b.In the interferometric modulator 12a in left side, show that a removable reflection horizon 14a is in a slack position, this slack position distance one comprises Optical stack 16a one preset distance of a local reflex layer.In the interferometric modulator 12b on right side, show that a removable reflection horizon 14b is in the actuated position that an adjacent optical is piled up 16b.

Optical stack 16a and 16b (being referred to as Optical stack 16) mentioned among this paper are made up of the layer of several fusions usually, and this can comprise an electrode layer (for example tin indium oxide (ITO)), a local reflex layer (for example chromium), reach a transparent dielectric.Therefore Optical stack 16 is electric conductivity, local transparent and local reflex property, and can for example process through the one or more layers in above-mentioned each layer are deposited on the transparent substrates 20.In certain embodiments, said layer is patterned into parallel band, and can form the column electrode in the display device, as further specifying hereinafter. Removable reflection horizon 14a, 14b can form by the one or more depositing metal layers that are deposited on pillar 18 tops (and column electrode 16a, 16b quadrature) and and be deposited on the series of parallel band that the middle expendable material between the pillar 18 constitutes.After expendable material is etched, removable reflection horizon 14a, 14b and Optical stack 16a, the 16b regulation air gap 19 of being separated by.Reflection horizon 14 can use one to have high conductivity and reflexive material (for example aluminium), and these bands can form the row electrode in the display device.

When not applying voltage, cavity 19 keeps being between removable reflection horizon 14a and the Optical stack 16a, and wherein removable reflection horizon 14a is in the mechanical relaxation state, shown in the pixel 12a among Fig. 1.Yet after a selected row and column applies potential difference (PD), the capacitor that forms in the row and column electrode intersection at respective pixel place becomes charged state, and electrostatic force pulls to these electrodes together.If voltage is enough high, then removable reflection horizon 14 can be out of shape and urged to Optical stack 16.Dielectric layer in the Optical stack 16 (not showing in the figure) can prevent the spacing distance between short circuit and key- course 14 and 16, shown in the pixel 12b on the right among Fig. 1.Regardless of the polarity of applying potential difference (PD), its behavior is all identical.This shows that the may command reflection activates with the row/row of non-reflective pixel state and activates similar in many aspects with row used in traditional LCD and other display techniques/row.

Fig. 2 to Fig. 5 B graphic extension is a kind of to show example process and the system that uses an array of interferometric modulators in the application one.

Fig. 2 is a system block diagrams, and its graphic extension one can comprise an embodiment of the electronic installation of various aspects of the present invention.In this exemplary embodiment; Said electronic installation comprises a processor 21-, and it can be any general purpose single-chip or multicore sheet microprocessor; For example ARM,

Pro, 8051,

Power

or any special microprocessor, for example digital signal processor, microcontroller or programmable gate array.According to convention in the industry, can processor 21 be configured to carry out one or more software modules.Except that carrying out an operating system, also can this processor be configured to carry out one or more software applications, comprise web browser, telephony application, e-mail program or any other software application.

In one embodiment, processor 21 also is configured to communicate with array driver 22.In one embodiment, array driver 22 comprises row driver circuits 24 and the column driver circuit 26 that signal is provided to a panel or array of display (display) 30.The sectional view of array shown in Fig. 1 illustrates with line 1-1 in Fig. 2.For the MEMS interferometric modulator, the hysteresis property of said row/row activated protocol these devices shown in Figure 3 capable of using.It for example possibly need, and one 10 volts potential difference (PD) makes displaceable layers be deformed into the actuated state from relaxed state.Yet, when this voltage when this value reduces, reduce when being back to below 10 volts at this voltage, this displaceable layers will keep its state.In exemplary embodiment shown in Figure 3, before voltage drop was low to moderate below 2 volts, displaceable layers was not exclusively lax.Therefore, in instance shown in Figure 3, exist one to be approximately 3 to 7 volts voltage range, in this voltage range, have one and apply voltage window, in this window, device is stabilized in lax or actuated state.Be referred to as " lag windwo " or " stability window " in this article.For array of display, OK/the row activated protocol can be designed to be expert at during the gating, make and selectedly the pixel that is activated is born about 10 volts voltage difference in current, and make being born voltage difference near 0 volt by the pixel that relaxes with hysteresis characteristic shown in Figure 3.After gating, it is poor to make pixel bear about 5 volts steady state voltage, and gating makes its residing any state so that its maintenance is expert at.In this example, after being written into, each pixel is all born one and is in the interior potential difference (PD) of 3-7 volt " stability window ".This characteristic makes pixel design shown in Figure 1 under identical the voltage conditions that applies, be stabilized in existing actuated state or relaxed state.Because each pixel of interferometric modulator; No matter be in actuated state or relaxed state; In fact all be one by fixed reflector and move the capacitor that the reflection horizon constitutes, therefore, this steady state (SS) can be able to keep under the voltage in the lag windwo and consumed power hardly.If the current potential that is applied immobilizes, then there is not electric current to flow into pixel in fact.

In typical application, can be through confirming that according to one group of desired actuated pixel in first row one group of row electrode forms a display frame.After this, horizontal pulse is applied to the electrode of the 1st row, thereby activates the pixel corresponding with determined alignment.After this, with the one group of row electrode that obtains confirming become with second row in desired one group of actuated pixel corresponding.After this, pulse is put on the electrode of the 2nd row, thereby activate the respective pixel in the 2nd row according to the row electrode that obtains confirming.The pixel of the 1st row does not receive the influence of the pulse of the 2nd row, and the state that keeps it to set at the impulse duration of the 1st row.Can by one in regular turn mode to the capable repetition above-mentioned steps of whole series, to form said frame.Usually, repeating this process continuously through the speed with a certain required frame number/second to refresh and/or upgrade these frames with new video data.Also have a variety of row and the row electrodes that are used for the driving pixels array to be known by people, and can use with the present invention with the agreement that forms display frame.

A kind of possible activated protocol that is used on 3 * 3 arrays shown in Figure 2, forming a display frame of Fig. 4,5A and 5B graphic extension.One group of possible row of Fig. 4 graphic extension and row voltage level, it can be used for demonstrating the pixel of hysteresis curve shown in Figure 3.In the embodiment of Fig. 4, activate a pixel relate to accordingly row be set to-V _{Bias voltage}, and will go accordingly be set to+Δ V-its can correspond respectively to-5 volts and+5 volts.Making pixel lax then is to be set to+V through being listed as accordingly _{Bias voltage}And will go accordingly and be set to identical+Δ V and realize with the potential difference (PD) that forms one 0 volts at the pixel two ends.Remain in 0 volt the row at those row voltages, it is to be in+V that nothing is discussed point by point _{Bias voltage}Still-V _{Bias voltage}, pixel all is stable at its initial residing any state.Such as also in Fig. 4 demonstration, should be appreciated that, also can use with above said voltage have the voltage of opposite polarity, for example, activate a pixel and can relate to row accordingly are set to+V _{Bias voltage}And will go accordingly and be set to-Δ V.In this embodiment, discharging pixel is to be set to-V through being listed as accordingly _{Bias voltage}Thereby and will go accordingly and be set to identical-Δ V and form one 0 volts potential difference (PD) at the pixel two ends and realize.

Fig. 5 B is the sequential chart of a series of row of demonstration and column signal, and these signals put on 3 * 3 arrays shown in Figure 2, and it will form the demonstration shown in Fig. 5 A and arrange that wherein the actuated pixel is non-reflectivity.Before writing the frame shown in Fig. 5 A, pixel can be in any state, and in this example, and all row all are in 0 volt, and all row all be in+5 volts.Under these institute's voltages that apply, all pixels all are stable at its existing actuated state or relaxed state.

In the frame shown in Fig. 5 A, pixel (1,1), (1,2), (2,2), (3,2) and (3,3) are activated.For realizing this effect, during " the line time " of the 1st row, the 1st row and the 2nd row are set at-5 volts, and the 3rd row are set at+5 volts.This can not change the state of any pixel, because all pixels all keep being in the stability window of 3-7 volt.After this, rise to 5 volts of pulses that roll back 0 volt then again down through one from 0 volt and come gating the 1st row.Activate pixel (1,1) and (1,2) thus and make pixel (1,3) lax.Other pixels in the array are all unaffected.For the 2nd row is set at desired state, the 2nd row is set at-5 volts, and the 1st row and the 3rd row are set at+5 volts.After this, the identical strobe pulse that is applied to the 2nd row will activate pixel (2,2) and make pixel (2,1) and (2,3) relax.Equally, other pixels in the array are all unaffected.Similarly, through the 2nd row and the 3rd row are set at-5 volts and be listed as the 1st be set at+5 volts set the 3rd capable.The strobe pulse of the 3rd row is set the pixel of the 3rd row shown in Fig. 5 A.After writing incoming frame, the row current potential is 0, and the row current potential can remain on+5 or-5 volts, and after this demonstration will be stable at the layout shown in Fig. 5 A.Should be appreciated that, can use identical programs the array that constitutes by tens of or hundreds of row and columns.Should also be clear that the timing, order and the level that are used to implement the voltage that row and column activates can alter a great deal in above-described General Principle, and above-mentioned instance is merely exemplary, and any activation voltage method can be used all with system and method as herein described.

Fig. 6 A and 6B are the system block diagrams of an embodiment of graphic extension one display device 40.Display device 40 for example can be cellular phone or mobile phone.Yet the same components of display device 40 and the form of doing slightly to change thereof also can be used as the for example illustration of all kinds such as TV and portable electronic device display device.

Display device 40 comprises a shell 41, a display 30, an antenna 43, a loudspeaker 45, an input media 48 and a microphone 46.Shell 41 comprises injection moulding and vacuum forming usually by any the processing in the many kinds of manufacturing process that the those skilled in the art knew.In addition, shell 41 can include but not limited to plastics, metal, glass, rubber and pottery by any the processing in the many kinds of materials, or its combination.In one embodiment, shell 41 comprises the removable section (not shown), the removable section exchange that it can have different colours with other or comprise unlike signal, picture or symbol.

The display 30 of exemplary display device 40 can be any in the numerous kinds of displays, comprises bi-stable display as herein described.In other embodiments; Well-known like the those skilled in the art, display 30 comprises a flat-panel monitor, plasma scope for example mentioned above, EL, OLED, STN LCD or TFT LCD; Or non-tablet display, for example CRT or other kinescope devices.Yet for ease of the explanation present embodiment, described in this paper, display 30 comprises an interferometric modulator display.

Fig. 6 B schematically shows the assembly among the embodiment of exemplary display device 40.Example illustrated property display device 40 comprises a shell 41, and can comprise that other are closed in assembly wherein at least in part.For example, in one embodiment, exemplary display device 40 comprises a network interface 27, and network interface 27 comprises that one is coupled to the antenna 43 of a transceiver 47.Transceiver 47 is connected to processor 21, and processor 21 is connected to again regulates hardware 52.Regulating hardware 52 can be through being configured to that a signal is regulated (for example a signal being carried out filtering).Regulate software 52 and be connected to a loudspeaker 45 and a microphone 46.Processor 21 also is connected to an input media 48 and a driver controller 29.Driver controller 29 is coupled to one frame buffer 28 and is coupled to array driver 22, and array driver 22 is coupled to an array of display 30 again.One power supply 50 requires to be all component power supply according to the designing institute of particular exemplary display device 40.

Network interface 27 comprises antenna 43 and transceiver 47, so that exemplary display device 40 can communicate through network and one or more device.In one embodiment, network interface 27 also can have some processing capacity, to reduce the requirement to processor 21.Antenna 43 is that any that know for the those skilled in the art is used to transmit and receive the antenna of signal.In one embodiment, this antenna is launched according to IEEE 802.11 standards (comprising IEEE 802.11 (a), (b), or (g)) and is received the RF signal.In another embodiment, this antenna is launched according to bluetooth (BLUETOOTH) standard and is received the RF signal.If be cellular phone, then this antenna is designed to receive CDMA, GSM, AMPS or other and is used for the convention signal that communicates at the wireless cellular telephony network.47 pairs of signals that receive from antenna 43 of transceiver carry out pre-service, so that it can be received and further handled by processor 21.Transceiver 47 is also handled the signal that self processor 21 receives, so that they can be through antenna 43 from exemplary display device 40 emissions.

In an alternate embodiment, can use a receiver to replace transceiver 47.In an alternate embodiment again, network interface 27 can by one can store or produce the view data that will be sent to processor 21 the figure image source replace.For example, this figure image source can be the software module that hard disk drive or that digital video disk (DVD) or contains view data produces view data.

The overall operation of processor 21 common control examples property display device 40.Processor 21 automatic network interfaces 27 or a figure image source receive data, become raw image data or a kind of form that is easy to be processed into raw image data for example through the view data of compression, and with this data processing.Then, processor 21 is sent to treated data driver controller 29 or is sent to frame buffer 28 and stores.Raw data typically refers to the information of each position characteristics of image in identification one image.For example, these characteristics of image can comprise color, saturation degree and gray level.

In one embodiment, processor 21 comprises a microcontroller, CPU or is used for the logical block of the operation of control examples property display device 40.Regulating hardware 52 generally includes and is used for transmitting and receiving the amplifier and the wave filter of signals from microphone 46 to loudspeaker 45.Regulate hardware 52 and can be the discrete component in the exemplary display device 40, perhaps can incorporate in processor 21 or other assemblies.

Driver controller 29 direct self processors 21 or obtain the raw image data that produces by processor 21 from frame buffer 28, and suitably with the raw image data reformatting so that high-speed transfer to array driver 22.Particularly, driver controller 29 with raw image data be reformated into one have a raster-like format data stream so that its have one be suitable for scanning array of display 30 chronological order.Then, the information after driver controller 29 will format is sent to array driver 22.Although driver controller 29 (a for example lcd controller) usually as one independently integrated circuit (IC) be associated with system processor 21, these controllers can make up by many kinds of modes.It can be used as hardware and is embedded in the processor 21, is embedded in the processor 21 or fully-integrated with example, in hardware and array driver 22 as software.

Usually; Array driver 22 after driver controller 29 receives format information and video data is reformated into one group of parallel waveform, the parallel waveform per second of this group many times is applied to from hundreds of of the x-y picture element matrix of display and thousands of lead-in wires sometimes.

In one embodiment, driver controller 29, array driver 22, and array of display 30 be applicable to the display of arbitrary type as herein described.For example, in one embodiment, driver controller 29 is a traditional display controller or bistable display controllers (a for example interferometric modulator controller).In another embodiment, array driver 22 is a legacy drive or a bistable display driver (a for example interferometric modulator display).In one embodiment, driver controller 29 integrates with array driver 22.This embodiment is very common in the integrated system of for example cellular phone, wrist-watch and other small-area display equal altitudes.In another embodiment, array of display 30 is a typical array of display or a bistable array of display (for example one comprise an interferometric modulator array display).

Input media 48 makes the operation that the user can control examples property display device 40.In one embodiment, input media 48 comprises keypad (for example qwerty keyboard or telephone keypad), button, switch, touch sensitive screen, pressure-sensitive or thermosensitive film.In one embodiment, microphone 46 is input medias of exemplary display device 40.When using microphone 46, can provide voice command to come the operation of control examples property display device 40 by the user to these device input data.

Power supply 50 can comprise numerous kinds of energy storing devices, and this is well-known in affiliated field.For example, in one embodiment, power supply 50 is a rechargeable batteries, for example nickel-cadmium cell or lithium ion battery.In another embodiment, power supply 50 is a regenerative resource, capacitor or solar cell, comprises plastic solar cell and solar cell coating.In another embodiment, power supply 50 receives electric power through the socket that is configured to from the wall.

In certain embodiments, as indicated above the staying of control programmability is stored in the driver controller, and this driver controller can be arranged on several positions of electronic display system.In some cases, the control programmability is stayed and is stored in the array driver 22.Those skilled in the art will realize that and to reach the above-mentioned optimization of enforcement in different configurations in number of hardware and/or the component software arbitrarily.

Details according to the structure of the interferometric modulator of above-mentioned principle work can be ever-changing.For example, five various embodiment of removable reflection horizon 14 of Fig. 7 A-7E graphic extension and supporting construction thereof.Fig. 7 A is a sectional view embodiment illustrated in fig. 1, wherein deposition one strip of metal material 14 on the support member 18 that quadrature extends.In Fig. 7 B, removable reflection horizon 14 only is on the tethers 32 at corner and is attached to support member.In Fig. 7 C, removable reflection horizon 14 hangs on the deformable layer 34, and deformable layer 34 can comprise a kind of flexible metal.Deformable layer 34 is connected on the substrate 20 around the periphery of deformable layer 34 directly or indirectly.These connect and are called support column in this article.Embodiment shown in Fig. 7 D has support column embolism 42, and deformable layer 34 promptly is positioned on the support column embolism 42.As shown in Fig. 7 A-7C, removable reflection horizon 14 keeps being suspended in above the cavity, but deformable layer 34 does not form support column through the hole of filling between deformable layer 34 and the Optical stack 16.But, form said support column by the smoothing material that is used to form support column embolism 42.Embodiment shown in Fig. 7 E is based on the embodiment shown in Fig. 7 D, but also can use through revising with other embodiment with arbitrary embodiment shown in Fig. 7 A-7C and not demonstration.In the embodiment shown in Fig. 7 E, used extra layer of metal or other conductive materials to form bus structure 44.This makes signal possibly palpiform be formed in the some electrodes on the substrate 20 thereby eliminated originally along the back side route of interferometric modulator.

For example in those embodiment shown in Figure 7, interferometric modulator is as the direct-viewing type device, and wherein the front side of self-induced transparency substrate 20 (with the top relative side of side that is furnished with modulator) watched image.In these embodiment, reflection horizon 14 optically shields some part on being positioned at of the interferometric modulator reflection horizon side relative with substrate 20, comprises deformable layer 34 and bus structure 44.This makes it possible to configuration and operation conductively-closed zone, and can influence image quality sharply.The separable modulator architecture of this kind make to the dynamo-electric aspect of modulator used with the optics aspect of modulator used structural design and material can be selected and play a role independently of each other.And the embodiment shown in Fig. 7 C-7E has the additional advantages that obtains from its mechanical property de (this is implemented by deformable layer 34) because of the optical property with reflection horizon 14.This can be optimized the structural design in reflection horizon 14 and material therefor aspect optical property, and the structural design of deformable layer 34 and material therefor can be optimized aspect the desired engineering properties.

The removable mirror for interferometric modulator that control system applied places the required voltage swing of actuated state to be called activation voltage.For example; As shown in Fig. 3; Activation voltage is about the 9-10 volt; Thereby apply-10 volts or about+10 volts of removable reflection horizon 14b (as seen in fig. 1) that just can activate interferometric modulator approximately, just can make the removable reflection horizon 14a (as seen in fig. 1) of interferometric modulator lax and apply about 0 volt.Activation voltage can change because of many kind of factor in time, and these factors comprise change, and the physical abrasion of mechanical type minute surface of for example temperature, interferometer electromechanical property.

Some factor in these factors (the for example change of interferometric modulator electromechanical property, and the physical abrasion of mechanical type minute surface) is usually only after a large amount of the use or after measuring sometime, just influencing bias voltage.Yet temperature but can influence the characteristic in removable reflection horizon 14 and cause the marked change into operative interventions formula modulator required voltage in the short time period.Environmental baseline according to using interferometric modulator decide-and for example (Arizona) is contained in the display on the device that is placed on the automobile instrument panel, perhaps is exposed in the winter time in the display on the device in the subzero temperature in the Arizona State during summer, and significant temperature variation just may take place at several hrs even in a few minutes in interferometric modulator.Also use with institute's sensing temperature and under this temperature, operating the predetermined information that the required necessary voltage of interferometric modulator is associated through sensing existing temperature in a position in this kind device, can in the temperature range of broadness, work through come to drive effectively said display according to the adjustment bias voltage.

Fig. 8 is the perspective, diagrammatic illustration of an embodiment under release (or lax) state of interferometric modulator 60.Interferometric modulator 60 comprises an Optical stack 16 on a transparent substrates 20, Optical stack 16 generally includes an electrode layer, an absorber layer and an electrode layer (not showing respectively).The relative thickness of substrate 20 is much larger than the thickness of Optical stack 16.For example, in certain embodiments, substrate 20 thick about 700 μ m, and Optical stack 16 thick about 1 μ m or following.In certain embodiments, substrate 20 is a glass.Support member 18 provides support for removable reflection horizon 14, removable reflection horizon 14 and Optical stack 16 cavity 19 of being separated by.

Removable reflection horizon 14 comprises one deck first material 11 and thick relatively one deck second material 13 of relative thin.In the embodiment shown in fig. 8, first material 11 is the aluminium that the thick one deck of written treaty 300 dusts is set, and second material 13 is for being provided with the nickel of the thick one deck of written treaty 1000 dusts.In other embodiments, first material 11 and second material 13 can comprise other materials, for example aluminium alloy.In other embodiments, the thickness of first material 11 and second material 13 also can be different.In certain embodiments, removable reflection horizon 14 can be all-in-one-piece, only comprises the uniform single layer that is made up of for example nickel, nickel alloy, aluminium or aluminium alloy.In other embodiments, removable reflection horizon 14 can comprise more than materials at two layers.In certain embodiments, described one deck first material 11 can be thicker than described one deck second material 13, and this can change the relation of the leading material of stress and strain.

But the stress of in interferometric modulator, introducing through the interferometric modulator temperature variation and the motion in the removable reflection horizon 14 of consequent strain appreciable impact.Stress is the power of the per unit area that on adjacent part, applied by object, and strain is distortion or the change in size that is caused by stress.The two all depends on the composition of solid proof stress property and elastic limits.When object is drawn, claim that it bears tension force or tension, and when its pressurized, then it bears pressure or compressive stress.Usually with tension be regarded as on the occasion of, and compressive stress is regarded as negative value.When material temperature changed, object can be processed material coefficient of thermal expansion coefficient (CTE) and expansion or contraction according to it.The normal working temperature of interferometric modulator can for example be about-40 ℃ to+70 ℃.When temperature variation, first material 11 in substrate 20, removable reflection horizon 14 and second material 13 can according to its separately CTE and different expansions and contraction appear.This kind of these two kinds of different materials expands and the contraction meeting causes strain in removable reflection horizon 14, and this can cause corresponding STRESS VARIATION in removable reflection horizon 14.

Although the two is all expressed and with temperature expansion and contraction by its CTE separately for said one deck first material 11 and said one deck second material 13, yet the CTE of thicker layer (for example second material 13) dominates expansion or amount of contraction.The expansion of substrate 20 and Optical stack 16 and amount of contraction are leading by the expansion and the contraction of substrate 20, because its thickness is much bigger.Usually, the CTE of substrate 20 is less than the CTE of said one deck second material 13, thereby when reference temperature changed, the expansion of said one deck second material 13 and contraction were greater than the expansion and the contraction of substrate 20.Yet support member 18 can limit expansion and the contraction of removable reflection horizon 14 with respect to substrate 20.Correspondingly, when temperature variation, removable reflection horizon 14 can experience strain variation on the plane in removable reflection horizon 14 x and y direction, and on the x in removable reflection horizon 14 and y direction, corresponding STRESS VARIATION (σ) also occurs.The stress in removable reflection horizon 14 can influence it in actuated position and the ability that do not move between the actuated position, and correspondingly influences its bias voltage.In one embodiment, substrate 20 comprise the display level Corning 1,737 one its be that a kind of CTE is 3.76 * 10 ^-6/ ℃ alumina silicate glass.The typical composition of alumina silicate glass is 55.0% SiO ₂, 7.0% B ₂O ₃, 10.4% Al ₂O ₃, 21.0% CaO and 1.0% Na ₂O.

Fig. 9 is a curve map, and its graphic extension is according to the temperature (x axle) of the interferometric modulator of an embodiment and the relation between the bias voltage (y axle).As shown in fig. 9, the bias voltage of interferometric modulator in a certain temperature range and the temperature cardinal principle inverse correlation of interferometric modulator, for example when the temperature of interferometric modulator raise, bias voltage reduced.Even the less variation of bias voltage (for example being about 0.25 volt or following in certain embodiments) but the also work of appreciable impact interferometric modulator, this depends on the hysteresis characteristic of interferometric modulator.In curve map shown in Figure 9, when about 25 ℃ of temperature variation, bias voltage can change about 0.25 volt.

Like Fig. 9 institute illustration, temperature variation can cause the increase of removable reflection horizon 14 x and y direction upper stress on the plane or reduce, and this can influence bias voltage.Can advantageously utilize the voltage that applies being intended to control interferometric modulator 60 to carry out making interferometric modulator 60 keep carrying out consistently work based on Temperature Compensation.In other words, when the temperature of interferometric modulator raises, the activation voltage of reduction is provided, and when temperature reduces, the activation voltage of rising is provided then.

As indicated above, activation voltage is with two voltages that are applied to interferometric modulator-Lie bias voltage (V _{Bias voltage}) with the row voltage-array configuration be applied to interferometric modulator.In embodiment described herein, row voltage not from its value+Δ V or-Δ V (for example referring to Fig. 4) changes.For example, array driver 22 can be adjusted bias voltage according to temperature, and the activation voltage that temperature is compensated is provided thus.Bias voltage (is also referred to as WV (V in this article _Work)), stress (σ), and temperature (T) between relation be shown in the following equation:

equation 1

σ=σ ₀+ k Δ T equation 2

σ wherein ₀Be the unrelieved stress under reference temperature for example, and k is a constant.Typical reference temperature is to be about 25 degrees centigrade room temperature.As an instance that concerns between these parameters in one embodiment, the every rising of temperature all can make the STRESS VARIATION 2Mpa in removable reflection horizon and make WV skew～11mV for 1 degree centigrade.In a common embodiment, the stress (σ) in the layer 14 of interferometric modulator 60 is tension, and this means that σ is more than or equal to 0.

Unrelieved stress σ in the layer 14 ₀Stress when being meant lax when being under reference temperature (not actuated) state, it results to making interferometric modulator 60 employed technologies.Because interferometric modulator 60 can be exposed to various treatment temperatures and because layer 14 time is formed on the sacrifice layer that finally is removed in beginning, thereby manufacturing process can influence unrelieved stress σ ₀

In Fig. 8, come display layer 14 interior stress σ along corresponding x axle and y axle with reference to a unit area 17 _xAnd σ _yCan show that the activation voltage that the temperature variation because of interferometric modulator causes changes through following equation.

$V_{\mathrm{Act}}\&Proportional;\left(\frac{{\mathrm{<figure-callout\; id="3"\; label="h"\; filenames="HSA00000462864100041.png"\; state="\{\{state\}\}">h</figure-callout>}}^{3/2}}{L}\right)\sqrt{\mathrm{\&sigma;}\left(T\right)*\mathrm{<figure-callout\; id="3"\; label="t\; Equation"\; filenames="HSA00000462864100041.png"\; state="\{\{state\}\}">t</figure-callout>}}$ Equation 3

Wherein L is the distance between each support member of interferometric modulator, and h is the air gap thickness that reflection horizon 14 moves through, and σ (T) is the stress in the removable reflection horizon 14, and it is the function of reference temperature T, and t is the thickness in removable reflection horizon 14.Distance between the thickness in said air gap, removable reflection horizon and each support member is in the design process of interferometric modulator, to select, and thereby in case after processing interferometric modulator, just can not change.

Can the temperature dependency of stress σ be described as σ=σ ₀-σ _T(T)

σ wherein ₀Be removable reflection horizon 14 unrelieved stress under reference temperature after processing, as indicated above, its CTE by second material 13 is leading.In certain embodiments, reference temperature is a reference temperature.

Thermal expansion mismatch amount between removable reflection horizon 14 and the substrate 20 can cause thermal strain and consequent thermal stress, and it is the function of thermal expansion mismatch amount.For example, when removable reflection horizon 14 is No. 1737 Corning glass for nickel and substrate 20, can thermal mismatching amount (Δ CTE) be described as

Δ CTE=α ₁-α ₂Equation 4

α wherein ₁=13.0 * 10 ^-6/ ℃ (CTE of nickel), and α ₂=3.76 * 10 ^-6/ ℃ (CTE of No. 1737 Corning glass).Thereby can be with thermal strain ε _TBe described as

ε _T=(Δ CTE) (Δ T) equation 5

Wherein Δ T is the warm temperature variation with respect to reference temperature.Thereby can consequent thermal stress be described as

σ _T(T)=E ₁ε _T=E ₁(Δ CTE) (Δ T) equation 6

E wherein ₁Be the elastic modulus of nickel, and Δ T is the temperature variation with respect to reference temperature.Thereby can be as at the function that shown in one of following two equations activation voltage is described as temperature:

$V_{\mathrm{Act}}\left(T\right)\&Proportional;\left(\frac{{\mathrm{<figure-callout\; id="3"\; label="h"\; filenames="HSA00000462864100041.png"\; state="\{\{state\}\}">h</figure-callout>}}^{3/2}}{L}\right)\sqrt{\left(({\mathrm{\&sigma;}}_o-E_1({\&Proportional;}_1-{\&Proportional;}_2)\mathrm{\&Delta;\; T})\right)*t}$ Equation 7

Perhaps

$V_{\mathrm{Act}}\left(T\right)\&cong;k_1\sqrt{{\mathrm{\&sigma;}}_{o}t}(1-\frac{{\mathrm{<figure-callout\; id="2"\; label="k"\; filenames="HSA00000462864100041.png"\; state="\{\{state\}\}">k</figure-callout>}}_2\mathrm{\&Delta;\; <figure-callout\; id="2"\; label="T"\; filenames="HSA00000462864100041.png"\; state="\{\{state\}\}">T</figure-callout>}}{{2\mathrm{\&sigma;}}_o})$ Equation 8

Wherein Δ T is the temperature variation with respect to reference temperature.Equation 8 shows activation voltage with the linear proximity form of equation 7.Fig. 9 is a curve map, and its graphic extension is the relation between temperature and the bias voltage in a specific embodiment, and this pass of graphic extension ties up in a certain temperature range near being linear.It should be noted that k ₁And k ₂Be constant, it can simplify this equational representation.

The unrelieved stress in removable reflection horizon 14 can be during making can make thickness, and the modulator manufacturing technology and controlling to a certain extent of the minimized variable of CTE amount of mismatch between removable reflection horizon 14 and the substrate 20, used each material (for example first material 11 and second material 13) layer through selection.

Figure 10 one is similar to the system block diagrams of Fig. 2; It is the embodiment of graphic extension one electronic installation schematically; Said electronic installation comprises one 3 * 3 interferometric modulator displays, and wherein driving circuit through being configured to be provided for driving the activation signal of array 30 according to existing temperature.Block diagram illustration among Figure 10 is explained a sensor 62, and sensor 62 is coupled to the circuit that is used to drive array 30.Sensor 62 sensing temperature conditions also provide a signal based on institute's sensing temperature to array driver 22.Sensor 62 can comprise the various embodiment of sensor circuit, and sensing temperature and produce the circuit of respective signal or the circuit of temperature influence for example is so that corresponding with temperature from the signal of sensor.For example, in one embodiment, sensor 62 comprises the temperature variant thermistor of its resistance.Because resistance can use resistor as temperature sensor to the known correlativity of temperature.In certain embodiments, the making with interferometric modulator array is made in thermistor on the silicon in combination.In certain embodiments, sensor 62 comprises a thermopair.

In the embodiment shown in fig. 10, sensor 62 is positioned at the driving circuit outside and is coupled to array driver 22.Array driver 22 is through being configured to use its signal that receives from sensor 62 to be provided for driving the signal corresponding to temperature of array 30.In one embodiment, array driver 22 uses predetermined the looking into table that is stored in the storer to confirm appropriate signal, according to the direction of signal array based on temperature that is received signal to be provided.Sensor 62 is arranged among other embodiment of (for example Figure 11) in (for example Figure 12) in the array driver 22 or the processor therein, also can use one to look into table and confirm appropriate signal, according to the direction of signal array based on temperature that is received signal to be provided.In another embodiment; Circuit in the array driver 22 (or processor 21) (for example can approach the curve shown in Fig. 9; Relation between temperature and the WV is approached is linearity), and serviceability temperature comes to array 30 signal that is directly proportional with the signal based on temperature that is received to be provided with the prescribed relationship between the WV subsequently.

62 sensed temperature of sensor can be the temperature at array 30 places, roughly near the temperature of the position of array 30, or the temperature of position except that array 30 positions.For example, in different embodiment, sensor 62 sensing array drivers 22, processor 21 or sensor 62 are from the temperature that is in.In certain embodiments, the temperature of sensor 62 pre-position in the display that is configured to sensing and comprises array 30, perhaps sensing comprises the temperature of a pre-position in the electronic installation of array 30.

In certain embodiments, sensor 62 comprises that also one is positioned over the sensing element 68 that ad-hoc location is sentenced sensing temperature, and wherein preferable said position is specified to makes its working temperature with the interferometric modulator of array 30 relevant.In this embodiment, said sensing element is positioned near the array 30.In other embodiments, sensing element 68 can for example be positioned in the driving circuit, comprises any position in the display of array 30, or comprise any position in the electronic installation of array 30.Electric circuit inspection temperature in the sensor 62 is to the influence of sensing element 68, and transmits signal according to said temperature to driving circuit (for example array driver 22).

Sensor 62 can be positioned at the diverse location place, and this looks desired specific embodiments and decides.Figure 11 is a system block diagrams, and its graphic extension one comprises another embodiment of the electronic installation of one 3 * 3 interferometric modulator displays and sensor 62.In one embodiment, with the temperature of the temperature correlation of array 30, and use a signal based on institute's sensing temperature to drive array 30 in sensor 62 detection sensors.In certain embodiments, processor 21 can have one be used to connect the sensing element (not shown) connecting line, but so that the temperature of the outside position of sensor 62 sense process devices 21.

Figure 12 is a system block diagrams, and its graphic extension one comprises another embodiment of the electronic installation of one 3 * 3 interferometric modulator displays and sensor 60.Here, sensor 60 is arranged in array driver 22.In one embodiment, with the temperature of the temperature correlation of array 30, and use a signal based on institute's sensing temperature to drive array 30 in the sensor 62 sensing array drivers 22.In certain embodiments, array driver 22 can have one be connected to the sensing element (not shown) connecting line, but so that the temperature of the outside position of sensor 62 sensing array drivers 22.

Figure 13 is a system block diagrams; Its schematically graphic extension one comprise the embodiment of the electronic installation of one 3 * 3 interferometric modulator displays and control circuit, said control circuit is used for the voltage swing that the array drive system is applied is controlled to interferometric modulator is placed actuated state or the required voltage of release conditions.This embodiment comprises test circuit 64, and test circuit 64 is connected to the driving circuit in the for example concrete array driver 22, and can comprise one or more test interferometric modulators 66 (or test modulator).Be to consider and Influence of Temperature, the minute surface that test circuit 64 is confirmed as test modulator 66 places actuated state and/or the required voltage swing of release conditions, and with one corresponding to the signal of definite voltage be sent to driving circuit, for example array driver 22.Array driver 22 is subsequently according to the signal adjustment driving voltage that comes self testing circuit 64, to obtain appropriate WV.As the result of said one or more test modulator actuated of monitoring and/or release, array driver 22 can provide drive signal to array 30 according to measured activation/release voltage.In certain embodiments, provide to the drive signal of said array and be directly proportional with measured activation voltage or about equally.In certain embodiments, in display, comprise one second driving circuit and drive one or more test modulator 66.

In one embodiment, test interferometric modulator 66 is the interferometric modulators that have the similar structures form with interferometric modulator seen in array 30.Test modulator 66 can apply the test drive signal in the above and write down the platform of measured value from it as one.Usually, do not use these test interferometric modulators to export the light that is used to show purpose.The overall dimension scale of test interferometric modulator 66 can be similar to or be different from the interferometric modulator in the array 30.Can decide according to the thermometrically target of expection, change the overall dimension or the concrete size of test interferometric modulator 66 with respect to the interferometric modulator of array 30.In alternate embodiment, test interferometric modulator 66 has the structural form of the interferometric modulator that is different from array 30.

In certain embodiments, can use two or more test modulator (not shown)s.Test modulator can be arranged in all places of display, comprises each end capable and/or each row modulator in the array.Usually, be positioned to make its beholder for display invisible test modulator, for example it does not receive or exports any visible light to the beholder.

Test circuit 64 can be confirmed as through following mode and activate the required voltage of test modulator 66: to test modulator 66 apply voltage so that modulator in " bifurcation switchings " between actuated state and the release conditions, monitor test modulator 66 with definite modulator change state under what voltage simultaneously.In certain embodiments, shown in the signal among Figure 14 90, drive test circuit 64 by the triangular voltage ripple.In another embodiment, use one to have triangular waveform and amplitude is confirmed test modulator with the signal that is directly proportional for the required voltage level of activation test modulator.

Preferablely drive test circuit 64, but also can use other frequencies to drive test circuit 64 with the frequency identical with the frequency of driving display.In addition, preferable also driving test circuit 64 with array 30 identical frame rate, but also can use other frame rate.For example, in certain embodiments, use its frequency to equate or the signal that is directly proportional drives test modulator with display frame rate.In another embodiment, the frequency that is used to drive the signal of test modulator then is approximately the half the of display frame rate.

In certain embodiments, the voltage magnitude of drive signal 90 is greater than the activation voltage of expection, to guarantee to reach activation voltage.In certain embodiments, when reference temperature reduced, the voltage magnitude of drive signal 90 can raise.In other embodiments, the signal that is used to drive test modulator is periodic, and the drive signal that is used to drive array is to concrete picture material.

In one embodiment, the electric capacity of monitoring test modulator 66, confirming modulator change state under what voltage, and this information of symbol use that the voltage level that is applied when changing according to electric capacity and electric capacity change changes driving voltage.Figure 14 shows the curve map of the relation of time (x axle) and electric capacity and voltage (y axle), and comprises signal 90 and capacitance curve 95.Signal 90 representative is according to an embodiment, for activating and discharging the voltage that removable reflection horizon 14 applies at test modulator 66 two ends.The electric capacity of the test modulator 66 that capacitance curve 95 representatives are measured, it obtains through applying by the voltage shown in the signal 90.

Be in the off-position here, when test modulator 66 begins.In state 70, be negative value when the voltage that is applied to test modulator 66 begins, in state 74, be increased to positive peak value, in state 80, be reduced to negative peak value then, and in state 82, be increased to a little negative value again.The electric capacity of measured test modulator 66 when capacitance curve 95 is reflected in voltage according to signal 90 changes.Measured capacitance curve 95 is low value in state 70 when beginning, and in state 72, fades to high value along with the rising of voltage subsequently, and this indication test modulator 66 is activated.In state 76, capacitance curve 95 becomes again to low value, and this indication test modulator 66 discharges.In state 78, capacitance curve 95 fades to high value, and this indication test modulator 66 is activated once more.At last, in state 82, capacitance curve 95 becomes again to low value, and this indication test modulator 66 discharges once more.In other embodiments, then the electric current of monitoring stream to test modulator 66 confirms when it activates or discharge.When test modulator 66 activated or discharges, electric current will form spike and electric capacity will increase or reduce.

In one embodiment, make test modulator 66 " bifurcation switching ", for example test modulator 66 is applied a series of voltages, so that voltage switches to negative voltage, perhaps switches to positive voltage from negative voltage from positive voltage.In this kind state, monitoring electric capacity when the voltage bifurcation is switched with the voltage level of confirming to make test modulator 66 activate and discharge, and is correspondingly adjusted the activation signal that is used to drive array 30 that is provided.This kind bifurcation is switched and can when modulator firing, be implemented, and after this periodically implements, with the variation of considering and between its operating period, being taken place.In certain embodiments, implement this process as the result who receives an input by the user or by an automated procedure (for example diagnostic procedure).

The electomechanical response of test modulator can through be configured to array 30 in the electomechanical response of interferometric modulator have predetermined relation.For example, said predetermined relation can make said electomechanical response roughly be directly proportional, about equally, or make it have roughly the same dynamo-electric behavior.Through learning that test interferometric modulator 66 is with respect to the relation between the electomechanical response of interferometric modulator in the array 30; Be measured as to activate and discharge test interferometric modulator 66 required voltage levels and just can adjust the drive signal that is sent to array 30, can influence the various factors of performance with compensation.As noted earlier, one of them factor is a temperature factor.It should be noted that use test interferometric modulator 66 just can compensate the drive signal that is sent to array 30 under the situation that need not measure temperature.

Test interferometric modulator 66 also is used in the long term drift of measuring offset voltage in electricity and the mechanical movement of interferometric modulator of array 30.The drift of offset voltage can result from machinery or structural change or Optical stack and/or the electric charge in the mobile specular layer 14 in disadvantageous temperature, device of long term exposure for example and gather.

Test modulator can have different dynamo-electric behaviors, for example to measure harsh temperature variation, due to voltage spikes or other will guarantee that display starts the condition of a diagnostic routine, for example shuts down and restarts.

Test interferometric modulator 66 also can be used for measuring offset voltage, and it is the voltage level of about midpoint between the positive lag window of interferometric modulator system and negative lag windwo.Can use a recursive algorithm to adjust or offset voltage is resetted, said recursive algorithm applies the property a revised potential pulse to test interferometric modulator and array interferometric modulator and measures the offset voltage of test interferometric modulator.

In certain embodiments, the interferometric modulator in the array has respectively with the relevant electroresponse function of a predetermined relationship with test modulator.For example, test modulator can have the resistance that is different from interferometric modulator in the array in its row electrode, so that the electric behavior of test modulator is different from the interferometric modulator in the array but its mechanical behavior is identical.In other embodiments, the interferometric modulator in the array has respectively with the relevant mechanical response function of a predetermined relationship with test modulator.For example, test modulator can have physics or the engineering properties that is different from interferometric modulator in the array, for example has higher prop density, and its electric behavior is identical so that the mechanical behavior of test modulator is different.

In another embodiment; The circuit (for example array driver 22, processor 21 or drive circuit 24,26) that is coupled to driving circuit has the circuit of temperature influence, and for example it has one or more characteristic electrons that changes with a kind of predetermined way that changes corresponding to display temperature.According to the characteristic electron that changes, driving circuit is the activation signal that array 30 produces corresponding to temperature variation, so that the interferometric modulator in the array 30 is with appropriate WV work.The circuit of this kind temperature influence can be coupled to driving circuit, is implemented in the driving circuit, perhaps is implemented in the sensor 62.

The process 100 of a kind of driving an array 30 of Figure 15 graphic extension (for example Fig. 2), array 30 have a plurality of interferometric modulators that can use with aforementioned each embodiment.In state 102, the temperature of a pre-position in the sensor display.Can use the circuit of sensor, test circuit, test interferometric modulator or temperature influence to come sensing temperature.

In state 104, will be sent to display driver based on the sensor signal of institute's sensing temperature.Subsequently, in state 106, process 100 produces an activation signal according to the sensor signal that is sent to display driver.Adjust the level of the activation signal that produces according to institute's sensing temperature; So that when the temperature of interferometric modulator in the array 30 raises; The voltage that is applied to interferometric modulator by said activation signal determined can reduce, and is that array 30 provides correct WV thereby make driving circuit.Otherwise, when the temperature of interferometric modulator in the display reduces, raise by the voltage that is applied to interferometric modulator that activation signal determined.At last, in state 108, process 100 provides said activation signal to array 30.

In certain embodiments, but also the interferometric modulator of array 30 is implemented measurement that test interferometric modulator 66 is done, thereby special test interferometric modulator 66 will be optional.For example, can with the interferometric modulator (for example one or more) of a little quantity in the array 30 simultaneously as the test interferometric modulator with show interferometric modulator.Can monitor and be used for confirming the drive signal of array by array control unit as these shift voltages of testing interferometric modulators of an array part.In one aspect, shift voltage is to make at least one interferometric modulator be converted to the voltage of relaxed state.In another aspect, shift voltage is to make at least one interferometric modulator be converted to the voltage of actuated state.Shift voltage can receive the temperature of at least one interferometric modulator, the electromechanical property of at least one interferometric modulator or the influence that gathered by the interior electric charge of at least one interferometric modulator.In certain embodiments, measuring operation is to measure the shift voltage of the one or more interferometric modulators in two or more non-adjacent areas that are arranged at display.In certain embodiments, said one or more interferometric modulators of display are arranged in one by the matrix of going and row constitute, and wherein said measuring operation is to measure to be arranged in the wherein shift voltage of one or more interferometric modulators of delegation.In many situations, with hope to being positioned on indicator screen one side or the interferometric modulator at an angle is implemented test, so that the unfavorable optical effect of test procedure is minimized.In addition, in many situations, the size of the interferometric modulator that is used for testing in the array 30 and structural form will be roughly the same with the interferometric modulator in array 30 remainders.

The preceding text description details some embodiment of the present invention.Yet, should be appreciated that no matter how detailed the preceding text explanation seems on literal, the present invention still can implement by many kinds of modes.It should be noted that describe some characteristic of the present invention and aspect the time used particular term should not be regarded as and mean that this term is defined as in this article again and only limit to comprise the characteristic of the present invention that is associated with this term or any concrete property of aspect.

Claims (59)

1. display device, it comprises:

First interferometric modulator array;

One or more second interferometric modulators;

Metering circuit, it is through being configured to measure the activation voltage of said one or more second interferometric modulators; And

First driving circuit, it is coupled to said first interferometric modulator array and through being configured to be provided for driving according to the measured said activation voltage of said metering circuit the drive signal of said first interferometric modulator array.

2. display device as claimed in claim 1; Wherein said first interferometric modulator array and said one or more second interferometric modulator have first electomechanical response and second electomechanical response respectively, and wherein said first electomechanical response and second electomechanical response have predetermined relationship each other.

3. display device as claimed in claim 1, wherein said metering circuit, it is through being configured to measure the release voltage of said one or more second interferometric modulators.

4. display device as claimed in claim 1, wherein said one or more second interferometric modulators are located near said first interferometric modulator array.

5. with the visible light of output beholder, said one or more second interferometric modulators are through being provided with so that it is invisible to the beholder through the location for display device as claimed in claim 1, wherein said first interferometric modulator array.

6. display device as claimed in claim 2, wherein said first electomechanical response and second electomechanical response are the functions of temperature.

7. display device as claimed in claim 2, wherein said predetermined relationship make said first electomechanical response be directly proportional basically with second electomechanical response.

8. display device as claimed in claim 2, wherein said predetermined relationship make said first electomechanical response equate basically with second electomechanical response.

9. display device as claimed in claim 1, wherein said first interferometric modulator array and said one or more second interferometric modulator have essentially identical dynamo-electric behavior.

10. display device as claimed in claim 1, wherein said first interferometric modulator array has different dynamo-electric behaviors with said one or more second interferometric modulators.

11. display device as claimed in claim 1; Wherein said first interferometric modulator array and said one or more second interferometric modulator have the first electroresponse function and the second electroresponse function respectively, and wherein said first electroresponse and second electroresponse have predetermined relationship each other.

12. display device as claimed in claim 11, wherein said predetermined relationship make said first electroresponse equate basically with second electroresponse.

13. display device as claimed in claim 1; Wherein said first interferometric modulator array and said one or more second interferometric modulator have the first mechanical response function and the second mechanical response function respectively, and the wherein said first mechanical response function and the second mechanical response function have predetermined relationship each other.

14. display device as claimed in claim 13, wherein said predetermined relationship make the said first mechanical response function equate basically with the second mechanical response function.

15. display device as claimed in claim 1, wherein said metering circuit is through being configured to measure the electric capacity in said one or more second interferometric modulator.

16. display device as claimed in claim 1, the changes in capacitance of wherein said metering circuit in being configured to said one or more second interferometric modulators of sensing.

17. display device as claimed in claim 16, wherein the said changes in capacitance of sensing comprises the current impulse in the electric current in said first driving circuit of sensing.

18. display device as claimed in claim 1, it further comprises second driving circuit, and it sends drive signal through configuration to said one or more second interferometric modulators.

19. display device as claimed in claim 1, it further comprises:

Display;

With the processor of said display electric connection, said processor is through being configured to image data processing; And

Memory storage with said processor electric connection.

20. display device as claimed in claim 19, it further comprises driving circuit, and it sends at least one signal through configuration to said display.

21. display device as claimed in claim 19, it further comprises controller, and it is through being configured to send to said driving circuit at least a portion of said view data.

22. display device as claimed in claim 19, it further comprises image source module, and it is through being configured to send said view data to said processor.

23. display device as claimed in claim 22, wherein said image source module comprises at least one in receiver, transceiver and the transmitter.

24. display device as claimed in claim 19, it further comprises input media, and it is imported data and said input data are sent to said processor through being configured to receive.

25. a method that drives interferometric modulator array, said method comprises:

Measure the activation voltage of one or more test interferometric modulators; And

To the display interferometric modulator array drive signal is provided through measuring activation voltage according to said, wherein said display interferometric modulator is exported light through configuration to the beholder.

26. method as claimed in claim 25, it further comprises the release voltage of measuring said one or more test interferometric modulators.

27. method as claimed in claim 25, wherein said provide drive signal to comprise to provide to said display interferometric modulator array have with said activation voltage is directly proportional or the drive signal of the voltage level that equates basically through measuring.

28. method as claimed in claim 25; It further comprises to said one or more test interferometric modulators provides the test drive signal; Wherein said test drive signal has triangular waveform, and said triangular waveform has and activates the amplitude that the required voltage level of said one or more test interferometric modulators is directly proportional.

29. method as claimed in claim 25, it further comprises to said one or more test interferometric modulators provides the test drive signal, and wherein said test drive signal has the frequency that equates or be directly proportional with said display frame rate.

30. method as claimed in claim 29, the frequency of wherein said test drive signal is about 1/2 of said display frame rate.

31. method as claimed in claim 25, wherein said measurement comprise the electric capacity of measuring in said one or more test interferometric modulators.

32. method as claimed in claim 25, wherein said measurement comprise the changes in capacitance in the said one or more test interferometric modulators of sensing.

33. method as claimed in claim 29, wherein said test drive signal are that said drive signal periodic and that provide to said display interferometric modulator is to the specific image content.

34. a method that is used to make display, it comprises:

Form first interferometric modulator array;

Form one or more second interferometric modulators;

Metering circuit is provided, and it is through being configured to measure the activation voltage of said one or more second interferometric modulators;

First driving circuit is provided, and it is coupled to said first interferometric modulator array and warp disposes the drive signal that is provided for driving said first interferometric modulator array according to the measured said activation voltage of said metering circuit.

35. method as claimed in claim 34, it further is included in and forms said first interferometric modulator array in the visible zone of beholder and in the sightless zone of beholder described in the said display, form said one or more second interferometric modulators.

36. the display that method according to claim 34 forms.

37. a display, it comprises:

First member that is used for light modulated;

Second member that is used for light modulated;

Measure member, it is used to measure the said activation voltage that is used for second member of light modulated; And

Drive member; It is used to drive said first member that is used for light modulated, and said drive member is coupled to and saidly is used for first member of light modulated and through being configured to be provided for driving the said drive signal that is used for first member of light modulated according to the measured said activation voltage of said measurement member.

38. display as claimed in claim 37; Wherein said first member and said second member that is used for light modulated that is used for light modulated has first electomechanical response and second electomechanical response respectively, and said first electomechanical response and second electomechanical response have predetermined relationship each other.

39. display as claimed in claim 37, wherein said first member that is used for light modulated comprises first interferometric modulator array.

40. display as claimed in claim 37, wherein said second member that is used for light modulated comprises one or more second interferometric modulators.

41. display as claimed in claim 37, wherein said measurement member comprises metering circuit.

42. display as claimed in claim 37, wherein said drive member comprises first driving circuit.

43. a method that is used to drive interferometric modulator display, it comprises:

Measure the shift voltage of one or more in a plurality of interferometric modulators in the display;

Confirm to be used to operate the driving voltage of said a plurality of interferometric modulators according to said through measuring shift voltage; And

Provide said warp to confirm driving voltage to said a plurality of interferometric modulators.

44. method as claimed in claim 43, wherein said is to make in said a plurality of interferometric modulator at least one be converted to the voltage of relaxed state through measuring shift voltage.

45. method as claimed in claim 43, wherein said is to make in said a plurality of interferometric modulator at least one be converted to the voltage of actuated state through measuring shift voltage.

46. method as claimed in claim 43, the wherein said influence of gathering through electric charge at least one in the variation of measuring at least one electromechanical property in the temperature that shift voltage receives in said a plurality of interferometric modulator at least one, the said a plurality of interferometric modulators or the said a plurality of interferometric modulator.

47. method as claimed in claim 43, wherein said measuring operation measurement are arranged at the said shift voltage of the one or more interferometric modulators in two or more non-adjacent areas of said display.

48. method as claimed in claim 43; Said a plurality of interferometric modulators of wherein said display are arranged in by row and the matrix that constitutes of row, and wherein said measuring operation measurement is arranged in one or more said shift voltage of said a plurality of interferometric modulators of one of said row.

49. method as claimed in claim 43; Said a plurality of interferometric modulators of wherein said display are arranged in by row and the matrix that constitutes of row, and wherein said measuring operation measurement is arranged in the said shift voltage of one or more interferometric modulators of two row or more a plurality of row of said row.

50. method as claimed in claim 49, first row in wherein said two or more row are arranged near the top of said display and second row in said two or more row is arranged at the bottom of said display.

51. method as claimed in claim 43; Said a plurality of interferometric modulators of wherein said display are arranged in many lines in said display, and wherein said measuring operation measurement is arranged in the said shift voltage of one or more interferometric modulators of one of said many lines.

52. a system that is used to drive interferometric modulator display, it comprises:

Sensor circuit; It is through being configured to measure the shift voltage of one or more in a plurality of interferometric modulators in the display, and said sensor circuit also confirms be used to operate the driving voltage of said a plurality of interferometric modulators according to said through measuring shift voltage through configuration; And

Driving circuit, it is coupled to said sensor circuit and to said a plurality of interferometric modulators said definite driving voltage is provided through configuration.

53. system as claimed in claim 52, wherein said is to make in the said interferometric modulator at least one be converted to the voltage of relaxed state through measuring shift voltage.

54. system as claimed in claim 52, wherein said is to make in the said interferometric modulator at least one be converted to the voltage of actuated state through measuring shift voltage.

55. system as claimed in claim 52; Said a plurality of interferometric modulators of wherein said display are arranged in many lines in said display, and wherein said measuring operation measurement is arranged in the said shift voltage of one or more interferometric modulators of one of said many lines.

56. a system that is used to drive interferometric modulator display, it comprises:

Measure member, it is used for measuring one or more the shift voltage in a plurality of interferometric modulators of display;

Confirm member, it is used for confirming to be used to operate the driving voltage of said a plurality of interferometric modulators according to said through measuring shift voltage; And

Member is provided, and it is used for to said a plurality of interferometric modulators said definite driving voltage being provided.

57. system as claimed in claim 56, wherein said measurement member comprises sensor circuit.

58. system as claimed in claim 56, wherein said definite member comprises logical circuit.

59. system as claimed in claim 56, the wherein said member that provides comprises driving circuit.

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