CN102142502B - LED (Light-Emitting Diode) packing structure - Google Patents
LED (Light-Emitting Diode) packing structure Download PDFInfo
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- CN102142502B CN102142502B CN201010104495.4A CN201010104495A CN102142502B CN 102142502 B CN102142502 B CN 102142502B CN 201010104495 A CN201010104495 A CN 201010104495A CN 102142502 B CN102142502 B CN 102142502B
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- film layer
- light
- led chip
- thin film
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Abstract
The invention discloses a LED (Light-Emitting Diode) packing structure, which comprises a base, a LED chip, an optical film layer and a phosphor layer, wherein the LED chip is positioned on the base, the optical film layer is positioned in the light emitting position of the LED chip, and the phosphor layer is positioned at the outer side of the optical film layer. A light path adjustment component is also arranged between the LED chip and the optical film layer, and the light path adjustment component can cause the incidence angle of the light ray emitted by the LED chip relative to the optical film layer to be decreased. Thus, the light path adjustment component can cause the light emitted by the LED chip to be projected onto the optical film layer in a small angle, the light emitted by the LED chip has high transmittance during transmitting through the optical film layer, and the light can fully enter into the phosphor layer to excite a phosphor material to emit light. Meanwhile, the optical film layer has high reflectivity for long-wavelength light emitted by phosphor, the light emitted by phosphor is effectively conveyed outside the LED device, the light-out efficiency of the device is greatly increased, and therefore the overall lighting effect of the LED device is increased.
Description
Technical field
The present invention relates to LED encapsulating structure technical field, more particularly, relate to a kind of LED encapsulating structure that improves light extraction efficiency.
Background technology
Due to LED (Light Emitting Diode; Light-emitting diode) have that the life-span is long, energy consumption is low, start the advantages such as fast, LED device has been widely used in the fields such as signal lamp, auto lamp, large scale display and illumination.At present the most frequently used white light LEDs is to adopt blue-light LED chip and phosphor combination and obtain white light.Typical white-light LED encapsulation technique is such, after blue-light LED chip bonding wire, toasts to clicking and entering phosphor gel on blue chip again.Adopting this method for packing can obtain easily white light LEDs, is a kind of method that current commercial white-light LED encapsulation extensively adopts.
There is following problem in this widely used white-light LED encapsulation technique: the blue light back scattering that the fluorescent powder grain in phosphor gel colloid can make LED chip send; And the stimulated radiation meeting of fluorescent material itself produces a large amount of light towards the radiation of chip direction, therefore, the light that has quite a few energy launches back and forth between phosphor gel, chip and reflector, wherein major part is all absorbed and is converted into heat energy by chip and encapsulating material, directly causes the loss of LED device light efficiency and the rising of working temperature.
Summary of the invention
The LED encapsulating structure that provides a kind of light extraction efficiency high is provided technical problem to be solved by this invention.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of LED encapsulating structure is provided, comprise pedestal, be positioned at LED chip on described pedestal, be positioned at described LED chip and go out the optical thin film layer of optical position and be positioned at the luminescent coating in described optical thin film layer outside, described optical thin film layer adopts two kinds of material alternate platings with different refractivity to form, and is also provided with the light path adjustment member that can make the incidence angle of the relative described optical thin film layer of light that LED chip sends reduce between described LED chip and described optical thin film layer.
More specifically, described light path adjustment member is reflector.
More specifically, the longitudinal section of described reflector is parabolic shape and is made up of metal or plastic material, and described reflector inwall is provided with reflecting coating.
More specifically, described light path adjustment member is optical focusing lens or optical focusing lens group.
More specifically, also comprise a support, described support one end is connected the other end and is connected with described luminescent coating with described pedestal, and described optical focusing lens or optical focusing lens group are located by described mid-stent.
More specifically, form in the bi-material of described optical thin film layer, a kind of material is SiO
2; Another kind of material is TiO
2, Ta
2o
5, ZrO
2in one or more mixture.
More specifically, described optical thin film layer is formed on the inwall of described luminescent coating by vacuum evaporation or chemical vapour deposition (CVD) mode.
More specifically, the incidence angle of the relatively described optical thin film layer of light after described light path is adjusted member adjustment is not more than 45 °.
More specifically, described incidence angle is not more than 30 °
More specifically, the quantity of described LED chip is at least one, and wave-length coverage is 300nm～490nm.
Like this, adjusting member by light path makes the light that LED chip sends project on optical thin film layer with less angle, guarantee that the light that LED chip sends has very high transmissivity in the time seeing through optical thin film layer, luminescent coating excitation fluorescent material can fully be entered luminous, simultaneously, the long wavelength's that optical thin film layer sends fluorescent powder light has highly reflective, make the light that fluorescent powder sends be effectively transferred to LED device outside, the light that has greatly improved device takes out efficiency, thereby improves the overall light efficiency of LED device.
Accompanying drawing explanation
Fig. 1 is the cross-sectional schematic of the embodiment of the present invention one;
Fig. 2 is the transmitted spectrum schematic diagram of the optical thin film layer in embodiment mono-;
Fig. 3 is the light path principle schematic diagram of embodiment mono-;
Fig. 4 is the cross-sectional schematic of the embodiment of the present invention two.
Embodiment
In order to make technical problem to be solved by this invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Please refer to Fig. 1 to Fig. 3, for the embodiment mono-of LED encapsulating structure of the present invention, comprise pedestal 102, be positioned at the LED chip 101 on described pedestal 102, be positioned at the optical thin film layer 104 that described LED chip 101 goes out optical position, and be positioned at the luminescent coating 105 in described optical thin film layer 104 outsides, described optical thin film layer adopts two kinds of material alternate platings with different refractivity to form, between described LED chip 101 and described optical thin film layer 104, be also provided with the light path that the incidence angle of the relative described optical thin film layer 104 of the light that can make LED chip 101 send reduces and adjust member.Like this, adjusting member by light path makes the light that LED chip 101 sends project on optical thin film layer 104 with less angle, guarantee that the light that LED chip 101 sends has very high transmissivity in the time seeing through optical thin film layer 104, can fully enter luminescent coating 105 excitation fluorescent materials luminous, simultaneously, the long wavelength's that optical thin film layer 104 sends fluorescent powder light has highly reflective, make the light that fluorescent powder sends be effectively transferred to LED device outside, the light that has greatly improved device takes out efficiency, thereby improves the overall light efficiency of LED device.
In the present embodiment, it is reflector 103 that described light path is adjusted member, and the longitudinal section of described reflector is parabolic shape and is made up of metal or plastic material, and described reflector inwall is provided with reflecting coating.LED chip 101 and pedestal 102 are positioned at the bottom of reflector 103, and optical thin film layer 104, luminescent coating 105 are positioned at the top of reflector 103.The shape and size parameter of described reflector, makes light that LED chip 101 sends just reach at most the optical thin film layer 104 of luminescent coating 105 inner sides through primary event.Like this, a part of light 106 that LED chip 101 sends directly projects on optical thin film layer 104.Another part light 107 projects optical thin film layer 104 surfaces after the primary event of reflector 103 again.The incidence angle of the relatively described optical thin film layer 104 of light after described reflector 103 is adjusted is not more than 45 °, and optimal way, for being not more than 30 °, is preferably not more than 20 °.
In the present embodiment, described optical thin film layer 104 adopts low-index material and high-index material alternate plating to form.As a kind of implementation, described low-index material is SiO
2, described high-index material is TiO
2, Ta
2o
5, ZrO
2in one or more mixture.And described low-index material and high-index material are to be formed on the inwall of described luminescent coating 105 by vacuum evaporation or chemical vapour deposition (CVD) mode.
The quantity of described LED chip 101 is at least one, and according to the distribution curve flux of the LED chip shown in Fig. 2, the wave-length coverage of described LED chip 101 is 300nm～490nm.
In addition, the composite luminescent material that luminescent coating 105 can adopt fluorescent material to be clipped between layer glass is made, and the composite luminescent material that also can adopt fluorescent material to be clipped between glass and colloid is made.Or luminescent coating 105 also can be fluorescent glass, luminescent glass ceramic and luminescence transparent pottery etc.Described luminescent coating 105 sends under the exciting of light at chip, launches more long wavelength's light, and the light that luminescent coating 105 sends can be ruddiness, gold-tinted, green glow, blue light, white light etc.
Please refer to Fig. 3, provide the operation principle schematic diagram of the present embodiment, the light 301 that LED chip sends projects with 25 ° of maximum incident angles on the luminescent coating 105 with optical thin film layer 104, light LED chip being sent due to optical thin film layer 104 has high transmittance, make light 301 that LED chip sends can fully enter luminescent coating 105 excitated fluorescent powders luminous, and fluorescent material luminous is similar to isotropic radiant body, a part of light 304 that fluorescent material sends is directly transferred to LED device outside, and 305 directions towards LED chip of another part light are propagated.And optical thin film layer 104 has highly reflective to the fluorescence 305 of this part backward radiation, the light 305 that present dynasty's chip direction is propagated produces reverberation 306 at once while arriving optical thin film layer 104, make the light that fluorescent powder sends be all effectively transferred to LED device outside, reduce LED chip and the absorption of fluorescent material to light, thereby improve the overall light efficiency of LED device.
The LED encapsulating structure of the present embodiment makes luminescent coating 105 away from chip, having reduced catoptrical heat energy transforms, greatly reduce the working temperature of fluorescent material and encapsulating material, can effectively slow down the aging of the decay of fluorescent material conversion efficiency and encapsulating material, thereby improve the life-span of LED device.In addition, adopting the light-emitting area of the LED device of the present embodiment is the surface of whole luminescent coating 105, has the light-emitting area larger than traditional LED device, therefore can effectively eliminate dazzle.
Please refer to Fig. 4, for the embodiment bis-of LED encapsulating structure of the present invention, comprise pedestal 402, be positioned at LED chip 401 on described pedestal 402, be positioned at described LED chip 401 and go out the optical thin film layer 405 of optical position and be positioned at the luminescent coating 406 in described optical thin film layer 405 outsides, between described LED chip 401 and described optical thin film layer 405, be also provided with the light path that the incidence angle of the relative described optical thin film layer 405 of the light that can make LED chip 401 send reduces and adjust member.
The difference of the present embodiment and embodiment mono-is, it is optical focusing lens or optical focusing lens group 404 that described light path is adjusted member.Described optical focusing lens or optical focusing lens group 404 can select K9 glass, PMMA (Polymethylmethacrylate, polymethyl methacrylate are commonly called as polymethyl methacrylate) etc. to have the material of high permeability.Adjust the location of member in order to realize light path, the present embodiment also comprises a support 403, described support 403 one end are connected the other end and are connected with described luminescent coating 406 with described pedestal 402, described optical focusing lens or optical focusing lens group 404 are by described support 403 location, middle part.In addition, described luminescent coating 406 is luminescent glass ceramic.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. a LED encapsulating structure, it is characterized in that: comprise pedestal, be positioned at the LED chip on described pedestal, be positioned at the optical thin film layer that described LED chip goes out optical position, and be positioned at the luminescent coating in described optical thin film layer outside, described optical thin film layer adopts two kinds of material alternate platings with different refractivity to form, described luminescent coating is away from described LED chip setting, the composite luminescent material that described luminescent coating adopts fluorescent material to be clipped between layer glass is made, or the composite luminescent material that adopts fluorescent material to be clipped between glass and colloid is made, or described luminescent coating adopts fluorescent glass or luminescent glass ceramic or luminescence transparent pottery, between described LED chip and described optical thin film layer, be also provided with and can make the light path that the incidence angle of the relative described optical thin film layer of light that LED chip sends reduces adjust member, the incidence angle of the relatively described optical thin film layer of light after described light path is adjusted member adjustment is not more than 45 °, it is optical focusing lens or optical focusing lens group that described light path is adjusted member, also comprise a support, described support one end is connected the other end and is connected with described luminescent coating with described pedestal, and described optical focusing lens or optical focusing lens group are located by described mid-stent.
2. LED encapsulating structure as claimed in claim 1, is characterized in that: form in the bi-material of described optical thin film layer, a kind of material is SiO
2; Another kind of material is TiO
2, Ta
2o
5, ZrO
2in one or more mixture.
3. LED encapsulating structure as claimed in claim 2, is characterized in that: described optical thin film layer is formed on the inwall of described luminescent coating by vacuum evaporation or chemical vapour deposition (CVD) mode.
4. LED encapsulating structure as claimed in claim 1, is characterized in that: described incidence angle is not more than 30 °.
5. LED encapsulating structure as claimed in claim 1, is characterized in that: the quantity of described LED chip is at least one, and wave-length coverage is 300nm～490nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010104495.4A CN102142502B (en) | 2010-01-28 | 2010-01-28 | LED (Light-Emitting Diode) packing structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010104495.4A CN102142502B (en) | 2010-01-28 | 2010-01-28 | LED (Light-Emitting Diode) packing structure |
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| Publication Number | Publication Date |
|---|---|
| CN102142502A CN102142502A (en) | 2011-08-03 |
| CN102142502B true CN102142502B (en) | 2014-06-25 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103717963B (en) * | 2011-08-15 | 2017-05-10 | 松下知识产权经营株式会社 | Fluorescent optical element and light-emitting device using same |
| KR102018267B1 (en) * | 2013-05-03 | 2019-09-04 | 엘지이노텍 주식회사 | Light emitting device package and light emitting module including the same |
| CN107102473A (en) * | 2017-05-22 | 2017-08-29 | 青岛海信电器股份有限公司 | A kind of backlight module and liquid crystal display device |
| CN107748468A (en) * | 2017-11-30 | 2018-03-02 | 青岛海信电器股份有限公司 | Liquid crystal display device |
| CN108037612A (en) * | 2017-11-30 | 2018-05-15 | 青岛海信电器股份有限公司 | Liquid crystal display device |
| CN110645546A (en) * | 2019-10-18 | 2020-01-03 | 韦立 | Down lamp reflecting cup |
| CN113347371A (en) * | 2021-06-18 | 2021-09-03 | 深圳传音通讯有限公司 | Photographing method, flash lamp module, mobile terminal and readable storage medium |
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| CN1956231A (en) * | 2005-10-28 | 2007-05-02 | 财团法人工业技术研究院 | Bias polarization luminous element |
| CN101162745A (en) * | 2006-10-09 | 2008-04-16 | 李屹 | High-efficiency fluorescent converted LED light source and backlight module |
| CN101297412A (en) * | 2005-09-28 | 2008-10-29 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation-emitting optoelectronic component |
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| CN100578826C (en) * | 2006-08-09 | 2010-01-06 | 广东昭信光电科技有限公司 | Making method for white LED chip |
| JP2009141038A (en) * | 2007-12-05 | 2009-06-25 | First System Co Ltd | Illuminator |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101297412A (en) * | 2005-09-28 | 2008-10-29 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation-emitting optoelectronic component |
| CN1956231A (en) * | 2005-10-28 | 2007-05-02 | 财团法人工业技术研究院 | Bias polarization luminous element |
| CN101162745A (en) * | 2006-10-09 | 2008-04-16 | 李屹 | High-efficiency fluorescent converted LED light source and backlight module |
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| CN102142502A (en) | 2011-08-03 |
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