CN102136372B - Dye sensitized solar cell treated by ion implantation and preparation method thereof - Google Patents
Dye sensitized solar cell treated by ion implantation and preparation method thereof Download PDFInfo
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- CN102136372B CN102136372B CN 201110024266 CN201110024266A CN102136372B CN 102136372 B CN102136372 B CN 102136372B CN 201110024266 CN201110024266 CN 201110024266 CN 201110024266 A CN201110024266 A CN 201110024266A CN 102136372 B CN102136372 B CN 102136372B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 46
- 238000005468 ion implantation Methods 0.000 title claims abstract description 26
- 238000012986 modification Methods 0.000 claims abstract description 64
- 230000004048 modification Effects 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000003792 electrolyte Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 10
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 6
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 5
- 230000001235 sensitizing effect Effects 0.000 claims abstract description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 58
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 27
- 229910052731 fluorine Inorganic materials 0.000 claims description 27
- 239000011737 fluorine Substances 0.000 claims description 27
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 12
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- DYAHQFWOVKZOOW-UHFFFAOYSA-N Sarin Chemical compound CC(C)OP(C)(F)=O DYAHQFWOVKZOOW-UHFFFAOYSA-N 0.000 claims description 6
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 4
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000011268 mixed slurry Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 abstract description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 16
- 230000031700 light absorption Effects 0.000 abstract 2
- 238000007669 thermal treatment Methods 0.000 abstract 2
- 238000001883 metal evaporation Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 239000000975 dye Substances 0.000 description 13
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Hybrid Cells (AREA)
Abstract
The invention discloses a preparation method for a dye sensitized solar cell treated by ion implantation. The preparation method comprises the following steps of: washing a light anode substrate; preparing a light absorption layer; performing thermal treatment for the first time on a light anode; implanting metal ions into the light anode; performing thermal treatment for the second time on the modified light anode subjected to the ion implantation; preparing a pair electrode; butt-jointing the pair electrode and the light anode; and encapsulating to prepare the dye sensitized solar cell. The invention also discloses a dye sensitized solar cell, which comprises the light anode, a dye sensitizing agent, the pair electrode and electrolyte, wherein the light anode is treated by ion implantation modification; and the ion implantation modification is Cu/TiO2 modification, Zn/TiO2 modification or Fe/TiO2 modification. By the method, a metal evaporation vacuum arc source ion implanter is used for performing metal ion modification on the surface of the light absorption layer of the light anode so as to generate a photogenerated electron cavity shallow potential trapping potential trap, so a new energy level is formed between a TiO2 conduction band and a valence band, and the matching degree between the TiO2 conduction band and the lowest non-occupied rail energy level of the dye is improved.
Description
Technical field
The present invention relates to field of dye-sensitized solar cells, relate in particular to a kind of DSSC that injects processing through ion and preparation method thereof.
Background technology
Since U.S. AT&T Labs in 1954 invention solar cell, people are to the continuous raising of being utilized in of solar energy, and its optoelectronic transformation efficiency also improves thereupon.The DSSC preparation method that the professor of the federal Institute of Technology of Lausanne, SUI delivered on (Nature) at " nature " in 1991 causes that the scholar that is correlated with is to this technology extensive concern both at home and abroad.This organic film battery compares with the conventional crystal battery that cost of manufacture is lower, preparation technology is simpler and easy, contaminative still less, and its theoretical photoelectric conversion efficiency can reach 31%.Therefore this technology has openr development prospect.
The DSSC electricity generating principle is similar to light and the effect of plant, and its structure is similar to the sandwich laminated construction again, and porous TiO successively promptly distributes between two conductive substrates
2Film, organic dyestuff, electrolyte and platinum film layer.The electron-hole pair that incident light excites dyestuff to produce, electronics passes through TiO
2Conduction band is injected into conductive substrates and is drawn through overload by outer lead and get back to electrode.The dyestuff that is excited obtains reduction in electrolyte, accomplish one time photovoltaic generation.
It is about 12% that the DSSC laboratory transfer ratio of at present existing bibliographical information only reaches, far below more than 20% of conventional crystal silion cell.The factor that influences DSSC photovoltaic conversion ratio is more, wherein TiO
2The electronic energy that the dyestuff that the influence of the minimum not occupied orbital of conduction level and dyestuff energy level matching degree is stimulated discharges can not more be injected into TiO
2Conduction level, and can not be back in the electrolyte hole-recombination with its release.If TiO
2The minimum not occupied orbital of conduction level and dyestuff energy level matching degree is lower, makes light become too much compound with photohole of electronics, causes the photovoltaic loss.
Summary of the invention
Technical problem to be solved by this invention provides a kind of preparation method and DSSC that utilizes the preparation of this method of DSSC of high-photoelectric transformation efficiency; This method utilizes ion implantation technique to produce the shallow potential well of capturing in light induced electron-hole, at TiO
2Form new energy level between conduction band and the valence band, improve TiO
2The matching degree of the minimum not occupied orbital of conduction band and dyestuff energy level; Utilize the solar cell of this method preparation to have higher optoelectronic transformation efficiency thereby make.
In order to achieve the above object, the present invention proposes a kind of preparation method of the DSSC of inject handling through ion, may further comprise the steps:
A. clean the light anode substrate;
B. prepare light absorbing zone;
C. the light anode after handling through step b is carried out the heat treatment first time;
D. metal ion is injected into the light anode after step c handles, accomplishes the ion implantation modification to the light anode, said ion implantation modification is Cu/ TiO
2Modification or Zn/ TiO
2Modification or Fe/ TiO
2Modification;
E. the light anode behind ion implantation modification is carried out the heat treatment second time;
F. prepare electrode;
G. with what step f prepared the light anode of electrode with step e preparation docked, encapsulation makes DSSC.
The preparation method of the above-mentioned DSSC of inject handling through ion cleans the light anode substrate and is meant have first to mix fluorine SnO said sputter among the said step a
2Light anode substrate one side of conductive layer was used deionized water, absolute ethyl alcohol and acetone 10 minutes with said smooth anode substrate successively in ultrasonic cleaning machine, oven dry is placed on the TiCl that concentration is 40 mmol/L in drying baker
4Soak in the solution, water-bath is heated to 70 ℃ and soaks down after 30 minutes, takes out oven dry.
The preparation method of the above-mentioned DSSC of inject handling through ion, the preparation light absorbing zone is meant the 20nm TiO2 slip that has prepared and 20nm and 200nm TiO among the said step b
2The mixed slurry silk screen printing is mixed fluorine SnO in first of said smooth anode
2Conductive layer surface, forming thickness through homogenizing, drying process is the nanometer transparent TiO of 14～16 μ m
2Rete and TiO
2Mixed layer is at TiO
2Silk screen printing one deck 400nm TiO again on the mixed layer
2Scattering layer forms light anode light absorbing zone.
The above-mentioned preparation method who injects the DSSC of handling through ion; Among the said step c light anode being carried out heat treatment for the first time is meant the light anode after step b handles is placed in the atmosphere furnace; Rise to 375 ℃ of insulations 5～10 minutes after 5～10 minutes in insulation under 325 ℃; Be warmed up to 450 ℃ of insulations 10～15 minutes again, at last temperature risen to 500 ℃ and be incubated 10～15 minutes, accomplish the preparation of said smooth anode.
The preparation method of the above-mentioned DSSC of inject handling through ion, said steps d intermediate ion injects modification and is meant the use ion implantor, regulates trigger voltage at 5 kv ~ 10kv, and implantation dosage is 1 * 10
15/ cm
2~ 10 * 10
15/ cm
2, line 2.5mA is with Fe
3+Be injected into the said smooth anode of step c, accomplish the modification of said smooth anode is handled.
The preparation method of the above-mentioned DSSC of inject handling through ion is meant the TiCl that the light anode after handling through the steps d modification is placed once more 40mmol/L to carry out heat treatment for the second time through the light anode behind the ion implantation modification among the said step e
4Soak the back oven dry in the solution, said smooth anode is placed in the atmosphere furnace to be incubated 30 minutes under 450 ℃ again.
The preparation method of the above-mentioned DSSC of inject handling through ion is meant in the side sputter second to electrode basement electrode preparation among the said step f and mixes fluorine SnO
2Conductive layer then utilizes silk screen print method that platinum slurry printing is mixed fluorine SnO to said second
2Conductive layer surface is handled down at 400 ℃ and was processed said to electrode in 10 minutes.
The above-mentioned preparation method who injects the DSSC of handling through ion; In the said step g encapsulation make DSSC be meant with step f preparation to electrode with after light anode that step e prepares docks; Use the sarin film to encapsulate; Then in vacuum environment, inject electrolyte, and use sarin film phonograph seal electrolyte inlet, make DSSC.
In order to achieve the above object; The present invention has proposed a kind of DSSC simultaneously; Comprise the surface be provided with the light anode of light absorbing zone, be adsorbed in said smooth anode light absorbing zone surface dye sensitizing agent, in the face of said smooth anode and be positioned at said light absorbing zone one side to electrode; Be arranged on said smooth anode and said to the electrolyte between the electrode, said smooth anode is handled through ion implantation modification, and said ion implantation modification is Cu/ TiO
2Modification or Zn/ TiO
2Modification or Fe/ TiO
2Modification.
Above-mentioned DSSC, said smooth anode comprise the light anode substrate, sputter at first on the said smooth anode substrate mixes fluorine SnO
2Conductive layer and light absorbing zone; Said light absorbing zone comprises that silk screen printing successively mixes fluorine SnO in said first
2Nanometer transparent TiO on the conductive layer
2Rete, TiO
2Mixed layer and TiO
2Scattering layer; Said electrode is comprised electrode basement, sputters at and said electrode basement is mixed fluorine SnO towards second of said smooth anode one side
2Conductive layer, silk screen printing are mixed fluorine SnO in said second
2The platinum electrode of conductive layer surface.
Compare with existing DSSC; The present invention utilizes MEVVA (metal vapor vacuum arc; Metal vapor vacuum arc) the ion source ion implantor carries out metal ion-modifiedly to light anode light absorbing zone surface, produces the shallow potential well of capturing in light induced electron-hole, at TiO
2Form new energy level between conduction band and the valence band, improved TiO
2The matching degree of the minimum not occupied orbital of conduction band and dyestuff energy level, thus make DSSC have higher optoelectronic transformation efficiency.Utilize linearity to sew and add the plane wave method analysis, through Fe
3+After the injection, TiO
2Band structure can change, and not only makes TiO
2Self band gap produces micro-displacement, and at TiO
2Forbidden band zone 1.19～1.63 eV produce new gap and can be with, the generation that this gap can be with can improve dyestuff minimum not occupied orbital energy level and TiO
2The matching degree of conduction level, more light induced electron is injected into TiO
2Gap level between conduction band and new life can also produce lattice defect and form that light induced electron is shallow captures potential well can to separate light induced electron-hole that dyestuff excites timely and effectively right, reduces the recombination rate in electronics-hole, reaches the purpose that improves the photovoltaic conversion ratio.Through the experiment contrast, inject Fe
3+Back efficiency of dye-sensitized solar battery improves above 30%, and at implantation dosage 1 * 10
15/ cm
2-9 * 10
15/ cm
2Be the convex parabolic shape in the scope.
Description of drawings
Through the description of its exemplary embodiment being carried out below in conjunction with accompanying drawing, the above-mentioned feature and advantage of the present invention will become apparent and understand easily.
Fig. 1 is a DSSC structural representation of the present invention.
The reference numeral explanation:
1-light anode, 101-light anode substrate, 102-first mixes fluorine SnO2 conductive layer,
2-light anode light absorbing zone, 201-nanometer transparent TiO2 rete, the 202-TiO2 mixed layer, the 203-TiO2 scattering layer,
3-is to electrode, and 301-is to electrode basement, and 302-second mixes fluorine SnO
2Conductive layer, the 303-platinum electrode.
4-electrolyte,
The 5-dye sensitizing agent.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explain.
Fig. 1 shows the present invention injects the DSSC of handling through ion structure; Can find out by figure; This DSSC comprise the surface be provided with the light anode 1 of light absorbing zone 2, be adsorbed in light anode light absorbing zone 2 surface dye sensitizing agent, in the face of light anode 1 and be positioned at light absorbing zone 2 one sides to electrode 3; Be arranged on light anode 1 and to the electrolyte between the electrode 34, light anode 1 is handled through ion implantation modification, and ion implantation modification is Cu/ TiO
2Modification or Zn/ TiO
2Modification or Fe/ TiO
2Modification.Light anode 1 comprises light anode substrate 101, sputter at first on the light anode substrate 101 mixes fluorine SnO
2 Conductive layer 102 and light absorbing zone 2; Light absorbing zone 2 comprises that silk screen printing successively mixes fluorine SnO in first
2Nanometer transparent TiO on the conductive layer 102
2Rete 201, TiO
2Mixed layer 202 and TiO
2Scattering layer 203; Electrode 3 is comprised electrode basement 301, sputters at electrode basement 301 is mixed fluorine SnO towards second of light anode 1 one sides
2 Conductive layer 302, silk screen printing are mixed fluorine SnO in second
2The platinum electrode 303 on conductive layer 302 surfaces.
The preparation method of DSSC of the present invention may further comprise the steps:
A. clean the light anode substrate;
B. prepare light absorbing zone;
C. the light anode after handling through step b is carried out the heat treatment first time;
D. metal ion is injected into the light anode after step c handles, accomplishes the ion implantation modification to the light anode, said ion implantation modification is Cu/ TiO
2Modification or Zn/ TiO
2Modification or Fe/ TiO
2Modification;
E. the light anode behind ion implantation modification is carried out the heat treatment second time;
F. prepare electrode;
G. with what step f prepared the light anode of electrode with step e preparation docked, encapsulation makes DSSC after injecting electrolyte.
Provide a concrete preparation method of DSSC of the present invention below.
Embodiment one
Step a: clean the light anode substrate.Fluorine SnO is mixed in a side sputter first in light anode substrate 101
2 Conductive layer 102 is mixed fluorine SnO to light anode first
2 Conductive layer 102 carries out surface clean, in ultrasonic cleaning machine, it is used deionized water, absolute ethyl alcohol and acetone 10 minutes successively, and oven dry is placed on the TiCl that concentration is 40 mmol/L in drying baker
4Soak in the solution, water-bath is heated to 70 ℃ and soaks down after 30 minutes, takes out oven dry.
Step b: preparation light absorbing zone.With the 20nm TiO that has prepared
2Slip and 20nm and 200nm TiO
2The mixed slurry silk screen printing is mixed fluorine SnO in first of light anode 1
2 Conductive layer 102 surfaces, forming thickness through homogenizing, drying process is the nanometer transparent TiO of 14～16 μ m
2Rete 201 and TiO
2Mixed layer 202 is at TiO
2Silk screen printing one deck 400nm TiO again on the mixed layer 202
2Scattering layer 203 forms light absorbing zone 2.
Step c: the light anode to after handling through step b carries out the heat treatment first time.To place in the atmosphere furnace through the light anode 1 after step b handles; Rise to 375 ℃ of insulations 5～10 minutes after 5～10 minutes in insulation under 325 ℃; Be warmed up to 450 ℃ of insulations 10～15 minutes again, at last temperature risen to 500 ℃ and be incubated 10～15 minutes, accomplish the preparation of light anode 1.
Steps d: metal ion is injected into the light anode after step c handles, accomplishes the ion implantation modification to the light anode, said ion implantation modification is Cu/ TiO
2Modification or Zn/ TiO
2Modification or Fe/ TiO
2Modification.Use MEVVA source ion implanter, regulate trigger voltage at 5 kv ~ 10kv, implantation dosage is 1 * 10
15/ cm
2~ 10 * 10
15/ cm
2, line 2.5mA is with Fe
3+Be injected into the said smooth anode 1 of step c, accomplish the modification of light anode 1 is handled.
Step e: the light anode to behind ion implantation modification carries out the heat treatment second time.To place the TiCl of 40mmol/L through the light anode 1 after the steps d modification is handled once more
4Soak the back oven dry in the solution, light anode 1 is placed in the atmosphere furnace to be incubated 30 minutes under 450 ℃ again.
Step f: preparation is to electrode.Fluorine SnO is mixed in a side sputter second to electrode basement 301
2 Conductive layer 302 then utilizes silk screen print method that platinum slurry printing is mixed fluorine SnO to second
2 Conductive layer 302 surfaces are handled down at 400 ℃ and were processed electrode 3 in 10 minutes.
Step g: with step f preparation the light anode of electrode with step e preparation docked, encapsulation makes DSSC.With step f preparation to electrode 3 with after the light anode 1 of step e preparation dock, use sarin film encapsulates, and then in vacuum environment, injects electrolyte, and use sarin film phonograph seal electrolyte inlet, makes DSSC.
Embodiment two
In steps d, also can use the light anode 1 among the different transition metal ion pair step c to carry out the modification processing.Like Co/ TiO
2Modification, Ni/ TiO
2Modification, Cu/ TiO
2Modification, Zn/ TiO
2Modifications etc. wherein have only Cu/ TiO
2Modification and Zn/ TiO
2Modification increases to the conversion of solar energy of battery, Co/ TiO
2Though modification is at TiO
2The zone, forbidden band produces new energy level but DeGrain, Ni/ TiO
2TiO after the modification
2Self can be with and not change, formed new energy level will be higher than TiO
2Conduction level produces negatively influencing, has reduced the conversion of solar energy of battery.
It should be noted that; Above content is to combine concrete execution mode to further explain that the present invention did; Can not assert that embodiment of the present invention only limits to this; Under above-mentioned guidance of the present invention, those skilled in the art can carry out various improvement and distortion on the basis of the foregoing description, and these improve or distortion drops in protection scope of the present invention.
Claims (9)
1. the preparation method of a DSSC of inject handling through ion is characterized in that:
May further comprise the steps:
A. clean the light anode substrate;
B. prepare light absorbing zone; Said preparation light absorbing zone is meant the 20nm TiO that has prepared
2Slip and 20nm and 200nm TiO
2The mixed slurry silk screen printing is mixed fluorine SnO in first of said smooth anode
2Conductive layer surface, forming thickness through homogenizing, drying process is the nanometer transparent TiO of 14～16 μ m
2Rete and TiO
2Mixed layer is at TiO
2Silk screen printing one deck 400nm TiO again on the mixed layer
2Scattering layer forms light anode light absorbing zone;
C. the light anode after handling through step b is carried out the heat treatment first time;
D. metal ion is injected into the light anode after step c handles, accomplishes the ion implantation modification to the light anode, said ion implantation modification is Cu/TiO
2Modification or Zn/TiO
2Modification or Fe/TiO
2Modification;
E. the light anode behind ion implantation modification is carried out the heat treatment second time;
F. prepare electrode;
G. with what step f prepared the light anode of electrode with step e preparation docked, encapsulation makes DSSC after injecting electrolyte.
2. the preparation method of the DSSC of inject handling through ion according to claim 1 is characterized in that:
Clean the light anode substrate among the said step a and be meant have first to mix fluorine SnO sputter
2Light anode substrate one side of conductive layer was used deionized water, absolute ethyl alcohol and acetone 10 minutes with said smooth anode substrate successively in ultrasonic cleaning machine, oven dry is placed on the TiCl that concentration is 40mmol/L in drying baker
4Soak in the solution, water-bath is heated to 70 ℃ and soaks down after 30 minutes, takes out oven dry.
3. the preparation method of the DSSC of inject handling through ion according to claim 1 is characterized in that:
Among the said step c light anode being carried out heat treatment for the first time is meant the light anode after step b handles is placed in the atmosphere furnace; Rise to 375 ℃ of insulations 5～10 minutes after 5～10 minutes in insulation under 325 ℃; Be warmed up to 450 ℃ of insulations 10～15 minutes again; At last temperature is risen to 500 ℃ and be incubated 10～15 minutes, accomplish the preparation of said smooth anode.
4. the preparation method of the DSSC of inject handling through ion according to claim 1 is characterized in that:
Said steps d intermediate ion injects modification and is meant the use ion implantor, regulates trigger voltage at 5kv～10kv, and implantation dosage is 1 * 10
15/ cm
2～10 * 10
15/ cm
2, line 2.5mA is with Fe
3+Be injected into the said smooth anode of step c, accomplish the modification of said smooth anode is handled.
5. the preparation method of the DSSC of inject handling through ion according to claim 1 is characterized in that:
Be meant the TiCl that the light anode after handling through the steps d modification is placed once more 40mmol/L to carry out heat treatment for the second time through the light anode behind the ion implantation modification among the said step e
4Soak the back oven dry in the solution, said smooth anode is placed in the atmosphere furnace to be incubated 30 minutes under 450 ℃ again.
6. the preparation method of the DSSC of inject handling through ion according to claim 1 is characterized in that:
Among the said step f electrode preparation is meant in the side sputter second to electrode basement and mixes fluorine SnO
2Conductive layer then utilizes silk screen print method that platinum slurry printing is mixed fluorine SnO to said second
2Conductive layer surface is handled down at 400 ℃ and was processed said to electrode in 10 minutes.
7. the preparation method of the DSSC of inject handling through ion according to claim 1 is characterized in that:
In the said step g encapsulation make DSSC be meant with step f preparation to electrode with after light anode that step e prepares docks; Use the sarin film to encapsulate; Then in vacuum environment, inject electrolyte; And use sarin film phonograph seal electrolyte inlet, make DSSC.
8. DSSC according to each described method preparation in the claim 1 to 7; Comprise the surface be provided with the light anode of light absorbing zone, be adsorbed in said smooth anode light absorbing zone surface dye sensitizing agent, in the face of said smooth anode and be positioned at said light absorbing zone one side to electrode; Be arranged on said smooth anode and said, it is characterized in that the electrolyte between the electrode:
Said smooth anode is handled through ion implantation modification, and said ion implantation modification is Cu/TiO
2Modification or Zn/TiO
2Modification or Fe/TiO
2Modification.
9. DSSC according to claim 8 is characterized in that:
Said smooth anode comprises the light anode substrate, sputter at first on the said smooth anode substrate mixes fluorine SnO
2Conductive layer and light absorbing zone;
Said light absorbing zone comprises that silk screen printing successively mixes fluorine SnO in said first
2Nanometer transparent TiO on the conductive layer
2Rete, TiO
2Mixed layer and TiO
2Scattering layer;
Said electrode is comprised electrode basement, sputters at and said electrode basement is mixed fluorine SnO towards second of said smooth anode one side
2Conductive layer, silk screen printing are mixed fluorine SnO in said second
2The platinum electrode of conductive layer surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110024266 CN102136372B (en) | 2011-01-22 | 2011-01-22 | Dye sensitized solar cell treated by ion implantation and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110024266 CN102136372B (en) | 2011-01-22 | 2011-01-22 | Dye sensitized solar cell treated by ion implantation and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102136372A CN102136372A (en) | 2011-07-27 |
| CN102136372B true CN102136372B (en) | 2012-11-14 |
Family
ID=44296121
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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| CN108597882A (en) * | 2018-03-30 | 2018-09-28 | 梧州井儿铺贸易有限公司 | A kind of dye solar cell improving light anode |
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| CN102592850A (en) * | 2012-03-27 | 2012-07-18 | 上海联孚新能源科技有限公司 | Dye sensitized solar cell and preparation method thereof |
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