CN102134492A - Staining solution for semiconductor chip junction - Google Patents
Staining solution for semiconductor chip junction Download PDFInfo
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- CN102134492A CN102134492A CN2010100345314A CN201010034531A CN102134492A CN 102134492 A CN102134492 A CN 102134492A CN 2010100345314 A CN2010100345314 A CN 2010100345314A CN 201010034531 A CN201010034531 A CN 201010034531A CN 102134492 A CN102134492 A CN 102134492A
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- knot
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- conductor chip
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Abstract
The invention discloses a staining solution for a semiconductor chip junction, belongs to the field of semiconductor chip preparation, and is invented to solve the current insignificant staining effect of lightly doped junctions. The solution comprises: 7-10 parts of chromium trioxide, 116-122 parts of hydrofluoric acid, and 120-150 parts of water; wherein, the component ratio is on a mass basis. The staining solution for semiconductor chip junctions of the invention is applicable to semiconductor chip production.
Description
Technical field
The present invention relates to the semiconductor chip fabrication field, relate in particular to semi-conductor chip knot dyeing solution.
Background technology
In the semi-conductor chip, PN junction (hereinafter to be referred as knot) is the basis of semi-conductor chip work.Be that semi-conductor chip conducts electricity by PN junction.
In the semi-conductor chip chip manufacturing, form knot by the chip substrates impurity, adulterating method has thermal diffusion method and ion implantation.At present, by manifest and the analysis chip base material in the zone of impurity, promptly reach monitoring, to the purposes such as analysis of chip product performance to diffusion, ion implantation technology by the knot pattern.Mix and be divided into light dope (≤10 usually
14Atoms/cm
3), heavy doping (〉=10
15Atoms/cm
3) two kinds.
Knot mainly contains SRP (spreading resistance test) manifesting of pattern at present, SIMS (sims) test and chemical solution dyeing, because chemical solution is tied painted low cost and ease for operation, it is widely used in semi-conductor chip production and relevant detection, field tests.Yet, in the conventional art, with the acetic acid and the hydrofluoric acid blended aqueous solution semi-conductor chip knot is dyeed usually.This method counterweight doped junction Color is better, and not remarkable to light dope knot Color.
Summary of the invention
The technical problem that the present invention will solve provides a kind of semi-conductor chip knot dyeing solution, and dyeing has effect preferably to this solution to the light dope knot.
In order to solve the problems of the technologies described above, the present invention by the following technical solutions:
A kind of semi-conductor chip knot dyeing solution comprises: chromium trioxide is 7～10, hydrofluoric acid is 116～122, water is 120～150; Wherein, described set of dispense is than being the massfraction ratio.
Preferably, described solution comprises: chromium trioxide is 7, hydrofluoric acid is 116, water is 120.
Further, described solution comprises that also acetum is 1～6, and wherein, described set of dispense is than being the massfraction ratio.
Further, described acetum is 3.
Wherein, the mass concentration of described acetum is 99.8%.
Further, the mass concentration of described hydrofluoric acid is 49%.
Further, described water is deionized water.
Compare with traditional technology, in the solution of the present invention, chromium trioxide is as good oxygenant, and it is different with the speed that the non-silica of gently mixing the knot place changes into silicon-dioxide to make the silica at light dope knot place in the semi-conductor chip change into the speed of silicon-dioxide, and hydrofluoric acid and silicon-dioxide react.Like this, gently mix the knot place and will form boundary, this boundary promptly is the boundary of gently mixing knot, thereby good to the knot of the light dope in semi-conductor chip making processes Color.
Description of drawings
Fig. 1 is for utilizing conventional art to light dope knot Color figure;
Fig. 2 is for utilizing solution of the present invention to light dope knot Color figure.
Embodiment
The object of the present invention is to provide a kind of semi-conductor chip knot dyeing solution, dyeing has effect preferably to this solution to the light dope knot.
A kind of semi-conductor chip knot dyeing solution comprises: chromium trioxide is 7～10, hydrofluoric acid is 116～122, water is 120～150; Wherein, described set of dispense is than being the massfraction ratio.
Fig. 1 is for using light dope Color figure in the conventional art, and Fig. 2 is for to carry out light dope Color figure with solution of the present invention.As can be seen, utilize conventional art to after the light dope dyeing, knot pattern and not obvious (drawing the circle part among Fig. 1), and utilize solution of the present invention that semi-conductor chip light dope dyeing back knot pattern obviously (is drawn the circle part) among Fig. 2.In the solution of the present invention, chromium trioxide is as good oxygenant, it is different with the speed that the non-silica of gently mixing the knot place changes into silicon-dioxide to make the silica at light dope knot place in the semi-conductor chip change into the speed of silicon-dioxide, and hydrofluoric acid and silicon-dioxide react, like this, gently mix the knot place and will form boundary, this boundary promptly is the boundary of gently mixing knot, thereby good to the knot of the light dope in semi-conductor chip making processes Color.
Below in conjunction with embodiment, semi-conductor chip knot dyeing solution of the present invention is done detailed explanation.
Embodiment 1
Present embodiment provides semi-conductor chip knot dyeing solution.A kind of semi-conductor chip knot dyeing solution comprises: chromium trioxide is that 7g, hydrofluoric acid are that 116g, water are 120g.In the described solution, chromium trioxide is as good oxygenant, it is different with the speed that the non-silica of gently mixing the knot place changes into silicon-dioxide to make the silica at light dope knot place in the semi-conductor chip change into the speed of silicon-dioxide, and hydrofluoric acid and silicon-dioxide react, like this, gently mix the knot place and will form boundary, this boundary promptly is the boundary of gently mixing knot, thereby good to the knot of the light dope in semi-conductor chip making processes Color.
Embodiment 2
Present embodiment provides semi-conductor chip knot dyeing solution.A kind of semi-conductor chip knot dyeing solution comprises: chromium trioxide is that 9g, hydrofluoric acid are that 118g, water are 135g.In the described solution, chromium trioxide is as good oxygenant, it is different with the speed that the non-silica of gently mixing the knot place changes into silicon-dioxide to make the silica at light dope knot place in the semi-conductor chip change into the speed of silicon-dioxide, and hydrofluoric acid and silicon-dioxide react, like this, gently mix the knot place and will form boundary, this boundary promptly is the boundary of gently mixing knot, thereby good to the knot of the light dope in semi-conductor chip making processes Color.
Embodiment 3
Present embodiment provides semi-conductor chip knot dyeing solution.A kind of semi-conductor chip knot dyeing solution comprises: chromium trioxide is that 10g, hydrofluoric acid are that 120g, water are 150g.Chromium trioxide in the described solution is as good oxygenant, it is different with the speed that the non-silica of gently mixing the knot place changes into silicon-dioxide to make the silica at light dope knot place in the semi-conductor chip change into the speed of silicon-dioxide, and hydrofluoric acid and silicon-dioxide react, like this, gently mix the knot place and will form boundary, this boundary promptly is the boundary of gently mixing knot, thereby good to the knot of the light dope in semi-conductor chip making processes Color.
Embodiment 4
Present embodiment provides semi-conductor chip knot dyeing solution.A kind of semi-conductor chip knot dyeing solution comprises: chromium trioxide is that 8g, hydrofluoric acid are that 117g, water are 130g.Wherein, the mass concentration of used hydrofluoric acid is 49%.Chromium trioxide in the described solution is as good oxygenant, it is different with the speed that the non-silica of gently mixing the knot place changes into silicon-dioxide to make the silica at light dope knot place in the semi-conductor chip change into the speed of silicon-dioxide, and hydrofluoric acid and silicon-dioxide react, like this, gently mix the knot place and will form boundary, this boundary promptly is the boundary of gently mixing knot, thereby good to the knot of the light dope in semi-conductor chip making processes Color.
Embodiment 5
Present embodiment provides semi-conductor chip knot dyeing solution.A kind of semi-conductor chip knot dyeing solution comprises: chromium trioxide is that 9.5g, hydrofluoric acid are that 119g, water are 140g.Wherein, used water is deionized water.Chromium trioxide in the described solution is as good oxygenant, it is different with the speed that the non-silica of gently mixing the knot place changes into silicon-dioxide to make the silica at light dope knot place in the semi-conductor chip change into the speed of silicon-dioxide, and hydrofluoric acid and silicon-dioxide react, like this, gently mix the knot place and will form boundary, this boundary promptly is the boundary of gently mixing knot, thereby good to the knot of the light dope in semi-conductor chip making processes Color.In the chip of the present invention knot dyeing solution, can also add massfraction and be 1～6 acetum.Preferably, can add massfraction is 3 acetum.Present embodiment has added the 3g acetum, and the quality solubility of this acetic acid is 99.8%.The adding of acetum under the condition of the sour environment that does not change dyeing solution, can cushion the concentration of the chromium ion with strong oxidizing property, helps controls reaction speed, is commonly used to the joint operating time aborning.In the present embodiment, used chromium trioxide is that Luoyang City chemical reagent factory produces, and lot number is 090315; Used hydrofluoric acid is that Jiangyin City chemical reagent factory produces, and lot number is 090411; Used acetic acid is that Jiangyin City chemical reagent factory produces, and lot number is 090206.
It is pointed out that the dyeing of mentioning among the present invention is not to dye color, but zone and other zone differences that needs are observed come that lightly doped region and other zone differences soon come.Among the present invention, at one time in, chromium trioxide is different with the extent of corrosion at non-light dope knot place to light dope knot extent of corrosion, like this, the big zone that extent of corrosion is little relatively, zone of extent of corrosion will indent, its roughness also can difference.Like this, the boundary in two zones will display, and lightly doped region has also just displayed.
Those skilled in the art can carry out various changes and modification to the present invention and not break away from aim of the present invention and scope.If these are changed and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (7)
1. semi-conductor chip knot dyeing solution is characterized in that: comprising: chromium trioxide is 7～10, hydrofluoric acid is 116～122, water is 120～150; Wherein, described set of dispense is than being the massfraction ratio.
2. solution according to claim 1 is characterized in that: comprising: chromium trioxide is 7, hydrofluoric acid is 116, water is 120.
3. solution according to claim 1 is characterized in that: comprise that also acetum is 1～6; Wherein, described set of dispense is than being the massfraction ratio.
4. solution according to claim 3 is characterized in that: described acetum is 3.
5. solution according to claim 3 is characterized in that: the mass concentration of described acetum is 99.8%.
6. solution according to claim 1 and 2 is characterized in that: the mass concentration of described hydrofluoric acid is 49%.
7. solution according to claim 1 and 2 is characterized in that: described water is deionized water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100345314A CN102134492A (en) | 2010-01-21 | 2010-01-21 | Staining solution for semiconductor chip junction |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100345314A CN102134492A (en) | 2010-01-21 | 2010-01-21 | Staining solution for semiconductor chip junction |
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| Publication Number | Publication Date |
|---|---|
| CN102134492A true CN102134492A (en) | 2011-07-27 |
Family
ID=44294423
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|---|---|---|---|
| CN2010100345314A Pending CN102134492A (en) | 2010-01-21 | 2010-01-21 | Staining solution for semiconductor chip junction |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1036295A (en) * | 1988-03-30 | 1989-10-11 | 复旦大学 | Surface display method for ion implantation odialysis area |
| US20050079649A1 (en) * | 2003-10-13 | 2005-04-14 | Shao-Kang Chang | Etchant composition for sem image enhancement of p-n junction contrast |
-
2010
- 2010-01-21 CN CN2010100345314A patent/CN102134492A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1036295A (en) * | 1988-03-30 | 1989-10-11 | 复旦大学 | Surface display method for ion implantation odialysis area |
| US20050079649A1 (en) * | 2003-10-13 | 2005-04-14 | Shao-Kang Chang | Etchant composition for sem image enhancement of p-n junction contrast |
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Application publication date: 20110727 |