CN102130129A - Sram的版图结构及其制造方法 - Google Patents
Sram的版图结构及其制造方法 Download PDFInfo
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- CN102130129A CN102130129A CN2010100273284A CN201010027328A CN102130129A CN 102130129 A CN102130129 A CN 102130129A CN 2010100273284 A CN2010100273284 A CN 2010100273284A CN 201010027328 A CN201010027328 A CN 201010027328A CN 102130129 A CN102130129 A CN 102130129A
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CN 201010027328 CN102130129B (zh) | 2010-01-20 | 2010-01-20 | Sram的版图结构及其制造方法 |
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CN 201010027328 CN102130129B (zh) | 2010-01-20 | 2010-01-20 | Sram的版图结构及其制造方法 |
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CN102130129A true CN102130129A (zh) | 2011-07-20 |
CN102130129B CN102130129B (zh) | 2013-12-18 |
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CN 201010027328 Active CN102130129B (zh) | 2010-01-20 | 2010-01-20 | Sram的版图结构及其制造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105825879A (zh) * | 2015-01-09 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | 灵敏放大器的版图及其形成方法、存储器的版图 |
WO2019157775A1 (zh) * | 2018-02-13 | 2019-08-22 | 中国科学院微电子研究所 | 互连结构及其制造方法、包括互连结构的电子设备 |
Family Cites Families (4)
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CN100388499C (zh) * | 1996-03-28 | 2008-05-14 | 英特尔公司 | 具有垂直层叠跨接的存储单元设计 |
TW319911B (en) * | 1996-11-25 | 1997-11-11 | Mos Electronics Taiwan Inc | Manufacturing method of resistor by using contact hole with high aspect ratio |
JP3807836B2 (ja) * | 1997-11-28 | 2006-08-09 | 株式会社ルネサステクノロジ | 半導体装置および半導体装置の製造方法 |
US7176125B2 (en) * | 2004-07-23 | 2007-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a static random access memory with a buried local interconnect |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105825879A (zh) * | 2015-01-09 | 2016-08-03 | 中芯国际集成电路制造(上海)有限公司 | 灵敏放大器的版图及其形成方法、存储器的版图 |
CN105825879B (zh) * | 2015-01-09 | 2018-08-10 | 中芯国际集成电路制造(上海)有限公司 | 灵敏放大器的版图及其形成方法、存储器的版图 |
WO2019157775A1 (zh) * | 2018-02-13 | 2019-08-22 | 中国科学院微电子研究所 | 互连结构及其制造方法、包括互连结构的电子设备 |
US11373948B2 (en) | 2018-02-13 | 2022-06-28 | Institute of Microelectronics, Chinese Academy of Sciences | Interconnection structure and method of manufacturing the same, and electronic device including the interconnection structure |
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CN102130129B (zh) | 2013-12-18 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |