CN102120928A - Chemical-mechanical grinding material and chemical-mechanical grinding method - Google Patents
Chemical-mechanical grinding material and chemical-mechanical grinding method Download PDFInfo
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- CN102120928A CN102120928A CN2010100225789A CN201010022578A CN102120928A CN 102120928 A CN102120928 A CN 102120928A CN 2010100225789 A CN2010100225789 A CN 2010100225789A CN 201010022578 A CN201010022578 A CN 201010022578A CN 102120928 A CN102120928 A CN 102120928A
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Abstract
The invention relates to a chemical-mechanical grinding material which comprises a hydrophilic-group surfactant, an oxidant, solid particles and water. The chemical-mechanical grinding material provided by the invention comprises the hydrophilic-group surfactant material, and the hydrophilic-group surfactant material can lower the surface tension between the chemical-mechanical grinding material and a hydrophobic film, so that the chemical-mechanical grinding material and the hydrophobic film can be attached to each other more tightly, thereby reducing residues, particles or other defects on the surface of the hydrophobic film made of polysilicon, boron-phosphorosilicate glass or the like.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of cmp agent and chemical and mechanical grinding method.
Background technology
In semi-conductor was made, cmp (CMP) technology can realize the planarization of whole wafer, becomes one of important step in the chip manufacturing process.
In cmp, cmp agent (Slurry) is one of key element of cmp technology, and its performance directly influences the quality of surface of polished.During design cmp agent, hope can reach effect such as remove that speed height, planeness are good, uniform film thickness, noresidue, defective are few.
At publication number is in the Chinese patent application of CN1884410, discloses a kind of composition of cmp agent, and described cmp agent is a kind of water-sol, and its pH value is 2～4.Described cmp agent comprises abrasive material, reagent and deionized water; Wherein, the weight percent concentration of abrasive material is 10～40%; The weight percent concentration of reagent is 0.5～5%; All the other are deionized water.Described abrasive size is 10～100nm.Reagent is selected from phosphoric acid or phosphoric acid salt in the polishing fluid.Described cmp agent clearance height, defectives such as surperficial no marking and corrosion pit, polishing sample surfaces quality is good, and cost is low, pollution-free.But described cmp agent is mainly used in monocrystalline magnesium oxide substrate is polished, for hydrophobic film, polysilicon for example, films such as boron-phosphorosilicate glass then do not have outstanding cmp effect.
Because polysilicon or boron-phosphorosilicate glass are hydrophobic films, so the cmp agent has bigger surface tension at the film surface of polysilicon or boron-phosphorosilicate glass, are difficult to fit tightly, and cause the cmp weak effect.With reference to figure 1, show in the prior art polysilicon surface synoptic diagram behind the cmp.Behind the cmp of prior art, polysilicon surface also has residue 101, eliminate described residue 101 by increasing grinding steps usually, but over-mastication is easy to stay depression at film surface.With reference to figure 2, show in the prior art schematic surface of boron-phosphorosilicate glass behind the cmp.Behind the cmp of prior art, boron-phosphorosilicate glass surface attachment particle 201 impurity remove described particle 201 by the step of adding buffer reagent usually, but this method is unsuitable for owing to cost is higher producing in batches.
Summary of the invention
The present invention solves provides a kind of cmp agent, reduces the surface imperfection of hydrophobic film.
For addressing the above problem, the invention provides a kind of cmp agent, described cmp agent comprises: hydrophilic group tensio-active agent, oxygenant, solid particulate and water.
Optionally, the weight percent concentration of described hydrophilic group tensio-active agent is: 1%-5%.
Optionally, the material of described hydrophilic group tensio-active agent is siloxanes, carboxylic acid, carboxylate or ammonia salt.
Optionally, described siloxanes is an aminosiloxane, and the weight percent concentration of described aminosiloxane in described cmp agent is 1%-1.5%.
Optionally, described carboxylic acid is the amide ether carboxylic acid, and the weight percent concentration in described cmp agent is 4.5%-5%.
Optionally, described carboxylate is a polyol ester, and the weight percent concentration in described cmp agent is 2.7%-3.2%.
Optionally, the weight percent concentration concentration of described solid particulate in the cmp agent is 2%-30%.
Optionally, described cmp agent is alkaline.
Optionally, described cmp agent is to hydrophobic film with grind the ratio that stops layer grinding rate and be lower than 5: 1.
Correspondingly, the present invention also provides a kind of chemical and mechanical grinding method that uses described cmp agent.
Compared with prior art, such scheme has the following advantages: comprise the hydrophilic group surfactant material in the described cmp agent, described hydrophilic group surfactant material can reduce the surface tension between cmp agent and hydrophobic film, cmp agent and hydrophobic film are more fitted tightly, thereby reduce defectives such as lip-deep residue of hydrophobic film and particle, improve the effect of cmp.
Description of drawings
Fig. 1 is a polysilicon surface synoptic diagram behind the cmp in the prior art;
Fig. 2 is the schematic surface of boron-phosphorosilicate glass behind the cmp in the prior art;
Fig. 3 is the polysilicon surface synoptic diagram after grinding with cmp agent of the prior art;
Fig. 4 is the polysilicon surface synoptic diagram after grinding with the cmp agent of one embodiment of the invention;
Fig. 5 is the statistic data figure of cmp rear film surface particles impurity.
Embodiment
The designer finds, when using cmp agent of the prior art, the surface of hydrophobic film can remaining residue and defective such as particle.In cmp, if can reduce the defective of the residue on hydrophobic film surface of polysilicon or boron-phosphorosilicate glass etc. or particle etc., the step that does not then need to increase over-mastication again or add buffer reagent avoids causing depression or cost to improve.Based on this, the designer designs a kind of new cmp agent in order to improve the surface property of hydrophobic film behind cmp.
A kind of embodiment of cmp agent according to the present invention, it comprises: hydrophilic group tensio-active agent, oxygenant, solid particulate and water.Wherein, described hydrophilic group surfactant material can make cmp agent and hydrophobic film more fit tightly, and described solid particulate provides the effect on grinding film surface, and described oxygenant provides the effect of corrosion film surface.Described cmp agent can also comprise sequestrant etc.
Describe the present invention in detail below in conjunction with each embodiment.
Embodiment one
The cmp agent is composed as follows: the hydrophilic group tensio-active agent is an aminosiloxane, the weight percent concentration of described aminosiloxane in described cmp agent is 1%-1.5%, and the weight percent concentration of solid particulate in described cmp agent is: 20%-25%.
Described cmp agent is to hydrophobic film and to grind the ratio stop layer grinding rate be 3.5: 1-5: 1, and promptly described cmp agent is selected than being 3.5 hydrophobic film: 1-5: 1.
The tensio-active agent of hydrophilic group described in the present embodiment is an aminosiloxane, other siloxanes, and for example the vinylsiloxane Fatty Alcohol(C12-C14 and C12-C18) also is applicable to the present invention.
Embodiment two
The cmp agent is composed as follows: the material of hydrophilic group tensio-active agent is the amide ether carboxylic acid, and its weight percent concentration is 4.5%-5%, and the weight percent concentration of solid particulate in described cmp agent is: 20%-25%.
Described cmp agent is 3 to the selection ratio of hydrophobic film: 1-3.5: 1.
The tensio-active agent of hydrophilic group described in the present embodiment is the amide ether carboxylic acid, other carboxylic acid, and for example alcohol ether carboxylate also is applicable to the present invention.
Embodiment three
The cmp agent is composed as follows: the material of hydrophilic group tensio-active agent is a polyol ester, and its weight percent concentration is 2.7%-3.2%, and solid particulate is that the weight percent concentration in described cmp agent is: 20%-25%.
Described cmp agent is 3 to the selection ratio of hydrophobic film: 1-3.5: 1.
The tensio-active agent of hydrophilic group described in the present embodiment is a polyol ester, other carboxylate, and for example the polymerizable boric acid ester also is applicable to the present invention.
In addition, described hydrophilic group tensio-active agent can also be other hydrophilic group tensio-active agents such as ammonia salt.
Fig. 3 shows with the polysilicon surface after the cmp agent grinding of prior art.Observe under scanning electronic microscope, polysilicon surface also has bigger granule foreign 301.Fig. 4 shows with the polysilicon surface after the cmp agent grinding of one embodiment of the invention, observes under scanning electronic microscope and Fig. 3 same area, polysilicon surface of the same area, and then polysilicon surface granule foreign 401 is much smaller.
Further analyze, when grinding with the cmp agent of the various embodiments described above, cmp agent and hydrophobic film fit tightly under the effect of hydrophilic group tensio-active agent, the Si-O key aquation on hydrophobic film surface is the Si-OH key, it is stripped under extraneous shearing force and hydrokinetic effect, under the effect that goes round and begins again, the hydrophobic film surface is ground like this, reaches the requirement of technology.Preferable, when the cmp agent is alkalescence, can increase the erosion rate of cmp agent, thereby improve cmp efficient the surface.
Therefore, hydrophilic group surfactant material in the cmp agent provided by the invention can reduce the surface tension between cmp agent and hydrophobic film, cmp agent and hydrophobic film are more fitted tightly, promote the effect of cmp.Preferably, the weight percent concentration of tensio-active agent is when the scope of 1%-5%, and grinding effect is better, and the defective on hydrophobic film surface is obviously reduced.
The designer also finds, can further improve the grinding effect of cmp agent by the weight percent concentration concentration that increases solid granulates.
Below the cmp agent of each embodiment adopt same hydrophilic group tensio-active agent, and adopt the solid particulate of Different Weight percentage concentration, embody of the influence of the weight percent concentration of solid particulate with this to grinding effect
Embodiment four
The cmp agent is composed as follows: the material of hydrophilic group tensio-active agent is an aminosiloxane, and its weight percent concentration is 1%-1.5%, and the weight percent concentration of solid particulate in described cmp agent is: 28%-30%.
Described cmp agent is 4 to the selection ratio of hydrophobic film: 1-4.32: 1.
Embodiment five
The cmp agent is composed as follows: the material of hydrophilic group tensio-active agent is an aminosiloxane, and its weight percent concentration is 1%-1.5%, and solid particulate is that the weight percent concentration in described cmp agent is: 2%-5%.
Described cmp agent is 1.5 to the selection ratio of hydrophobic film: 1-1.8: 1.
By increasing the weight percent concentration of solid particulate in the cmp agent, can increase abrasive and hydrophobic film abrasive surface area, improve the effect of cmp.But the too high meeting of the concentration of solid particulate causes too thickness of cmp agent, and mobile difference and cost are too high.Preferably, the solid particulate weight percent concentration is: 2%-30%.Particularly, can adjust the solid particulate weight percent concentration according to different processing requirements.And oxygenate content increases usually, then can reduce solid content.
The designer finds that cmp agent provided by the invention under the identical condition of other processing parameters, has different selection ratios to hydrophobic film, but described selection ratio is all less than 5: 1.For hydrophobic film, carry out the cmp of different choice ratio after, film surface is carried out physical failure analysis (PFA).With reference to figure 5, show the statistic data of cmp rear film surface particles impurity.After in the prior art hydrophobic film being carried out the cmp of high selectivity (select than greater than 10: 1), there are 80 to cause in 100 defectives of film surface by granule foreign.And cmp agent provided by the invention is when grinding, and hydrophobic film is had low selection ratio less than 5: 1, after grinding, has only 5 to be caused by granule foreign in 100 defectives of film surface.This shows, provided by the invention hydrophobic film is had low select the cmp agent of ratio significantly to reduce granule foreign, make the granule foreign that occupies defects count 80% originally be reduced to 5%.
To sum up, cmp agent provided by the invention comprises the hydrophilic group tensio-active agent, and described hydrophilic group tensio-active agent reduces the surface tension between cmp agent and hydrophobic film, so that cmp agent and hydrophobic film more fit tightly.And, alternatively, also can adopt the solid particulate proportioning of higher concentration, further improve the effect of cmp.In addition, when described cmp agent is used to grind hydrophobic film, select, make hydrophobic film surfacing, defective few, have good surface property than being lower than 5: 1.
Though oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (10)
1. a cmp agent is characterized in that, described cmp agent comprises: hydrophilic group tensio-active agent, oxygenant, solid particulate and water.
2. cmp agent as claimed in claim 1 is characterized in that the weight percent concentration of described hydrophilic group tensio-active agent is: 1%-5%.
3. cmp agent as claimed in claim 1 is characterized in that, the material of described hydrophilic group tensio-active agent is siloxanes, carboxylic acid, carboxylate or ammonia salt.
4. cmp agent as claimed in claim 3 is characterized in that described siloxanes is an aminosiloxane, and the weight percent concentration of described aminosiloxane in described cmp agent is 1%-1.5%.
5. cmp agent as claimed in claim 3 is characterized in that, described carboxylic acid is the amide ether carboxylic acid, and the weight percent concentration in described cmp agent is 4.5%-5%.
6. cmp agent as claimed in claim 3 is characterized in that described carboxylate is a polyol ester, and the weight percent concentration in described cmp agent is 2.7%-3.2%.
7. cmp agent as claimed in claim 1 is characterized in that, the weight percent concentration concentration of described solid particulate in the cmp agent is 2%-30%.
8. cmp agent as claimed in claim 1 is characterized in that, described cmp agent is alkaline.
9. cmp agent as claimed in claim 1 is characterized in that, described cmp agent is lower than 5: 1 to hydrophobic film and the ratio that grinding stops layer grinding rate.
10. one kind is used the chemical and mechanical grinding method of cmp agent according to claim 1.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010022578 CN102120928B (en) | 2010-01-08 | 2010-01-08 | Chemical-mechanical grinding material and chemical-mechanical grinding method |
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| CN 201010022578 CN102120928B (en) | 2010-01-08 | 2010-01-08 | Chemical-mechanical grinding material and chemical-mechanical grinding method |
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| CN102120928B CN102120928B (en) | 2013-11-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103865401A (en) * | 2012-12-10 | 2014-06-18 | 安集微电子（上海）有限公司 | Application of chemo-mechanical polishing liquid |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| CN101096576A (en) * | 2006-06-30 | 2008-01-02 | 天津晶岭电子材料科技有限公司 | Algae removing type polishing liquid |
| CN101016438A (en) * | 2007-02-09 | 2007-08-15 | 孙韬 | Alkaline computer hard disk polishing liquid and producing method thereof |
| CN101463230B (en) * | 2009-01-16 | 2011-12-28 | 清华大学 | Polishing composite for hard disk substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103865401A (en) * | 2012-12-10 | 2014-06-18 | 安集微电子（上海）有限公司 | Application of chemo-mechanical polishing liquid |
| WO2014089907A1 (en) * | 2012-12-10 | 2014-06-19 | 安集微电子（上海）有限公司 | Application of chemical mechanical polishing agent |
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Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121102 |
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Effective date of registration: 20121102 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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