CN102110416B - Electrophoretic display device and drive method thereof - Google Patents
Electrophoretic display device and drive method thereof Download PDFInfo
- Publication number
- CN102110416B CN102110416B CN 200910247414 CN200910247414A CN102110416B CN 102110416 B CN102110416 B CN 102110416B CN 200910247414 CN200910247414 CN 200910247414 CN 200910247414 A CN200910247414 A CN 200910247414A CN 102110416 B CN102110416 B CN 102110416B
- Authority
- CN
- China
- Prior art keywords
- voltage
- film transistor
- tft
- wire
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
The invention discloses an electrophoretic display device and a drive method thereof. The electrophoretic display device comprises a plurality of data lines, a plurality of gate lines and a plurality of pixel units, wherein the data lines and the gate lines are mutually intersected; the pixel units are positioned at the intersections of the gate lines and the data lines; and each pixel unit comprises a switch element, a first voltage line, a second voltage line, a voltage selecting unit and a pixel electrode, wherein the voltage selecting unit is respectively connected with the switch element, the first voltage line and the second voltage line, and the pixel electrode is connected with the voltage selecting unit. The electrophoretic display device disclosed by the invention is not required to be equipped with a data driven circuit with a larger voltage driving range, thereby lowering the production cost, and reducing the leakage current.
Description
Technical field
The present invention relates to the electrophoresis showed field, particularly relate to a kind of electrophoretic display device (EPD) and driving method thereof.
Background technology
At present; Be dispersed in charged corpuscle in the liquid owing to the phenomenon of swimming takes place extra electric field, promptly so-called electrophoresis is for people know, and developed the electrophoretic display device (EPD) that utilizes electrophoresis; This electrophoretic display device (EPD) has combined the advantage of plain paper and electronic console; It not only has readability but also have portability, and has characteristics such as the visual angle is wide, deflection, so electrophoretic display device (EPD) has been identified alternative traditional paper media.
General, existing electrophoretic display device (EPD) comprises: first substrate, second substrate and be arranged on the electronic ink layer between said first substrate and second substrate.Wherein, many data lines and many gate lines are formed on said first substrate, and the intersection point place of said gate line and said data line is formed with pixel cell.The pixel electrode of each pixel cell is connected with the drain electrode of on-off element, and the source electrode of said on-off element is connected with said data line, and the grid of said on-off element is connected with said gate line, and said second substrate is provided with transparency conducting layer.Said electrophoretic display device (EPD) also comprises gate driver circuit and data drive circuit, and said gate driver circuit is used for to said gate line sweep signal being provided, and said data drive circuit is used for to said data line data voltage being provided.
Wherein, said electronic ink layer comprises a plurality of spherical microcapsules that are, and the diameter of said microcapsules is about 10 to 15 microns, and wherein each microcapsules comprises the white particles of the positive polarity charging that floats on a liquid and the black particle of negative polarity charging.When positive driving voltage imposes on pixel electrode; The vicinity that white particles moves to microcapsules has a side of second substrate of transparency conducting layer; Pixel cell will present white to the observer; Simultaneously, black particle moves to a side of said first substrate of vicinity of microcapsules, and the observer can't be seen.Through between pixel electrode and transparency conducting layer, applying negative driving voltage; Black particle moves to a side of the second transparent substrate of the vicinity that is in microcapsules; Thereby make pixel cell present black to the observer; Simultaneously, white particles moves to a side of said first substrate of vicinity of microcapsules, makes the observer invisible.When removing voltage, black particle and white particles remain on the state that is obtained, and electrophoretic display device (EPD) demonstrates bi-stable character, and consumed power not basically.
When said pixel cell presents black to the observer; Be that existing electrophoretic display device (EPD) is in when deceiving attitude; Data voltage on the said data line is generally+15V, when pixel cell presents white to the observer, when promptly existing electrophoretic display device (EPD) is in white attitude; Data voltage on the said data line is generally-15V, and the sustaining voltage on the said data line then is 0V.Therefore, the driving scope of the data drive circuit of existing electrophoretic display device (EPD) is at least-15V～+ 15V, this just makes said data drive circuit need bigger area, has increased production cost.And said electronic ink layer can equivalence be an electric capacity and a big resistance, and this just makes closes back when being in hold mode (be electrophoretic display device (EPD)) at on-off element, and leakage current is bigger.
Summary of the invention
The present invention provides a kind of electrophoretic display device (EPD) and driving method thereof, to solve the data drive circuit that existing electrophoretic display device (EPD) need dispose big driven scope, causes the production cost problem of higher.
The present invention also provides a kind of electrophoretic display device (EPD) and driving method thereof, with the bigger problem of leakage current that solves existing electrophoretic display device (EPD).
For solving the problems of the technologies described above; The present invention provides a kind of electrophoretic display device (EPD); Said electrophoretic display device (EPD) comprises many data lines and many gate lines intersected with each other and is positioned at gate line and a plurality of pixel cells at data line intersection point place that wherein each pixel cell comprises: on-off element, first pressure-wire, second pressure-wire, the voltage selected cell that is connected with said on-off element, said first pressure-wire and said second pressure-wire respectively; And the pixel electrode that is connected with said voltage selected cell; Wherein, when said gate line is opened said on-off element, when the data voltage on the said data line is high voltage; Said on-off element is delivered to said voltage selected cell with high voltage, and said voltage selected cell imposes on said pixel electrode with the voltage on said first pressure-wire; When the data voltage on the said data line was low-voltage, said on-off element was delivered to said voltage selected cell with low-voltage, and said voltage selected cell imposes on said pixel electrode with the voltage on said second pressure-wire.
Further, said pixel cell also comprises a storage unit, and the voltage that the said on-off element of said cell stores is carried is so that said voltage after said on-off element is closed, continues to output to said voltage selected cell.Said storage unit is a MM CAP, and its two ends are connected with said first pressure-wire with said on-off element respectively.
Further; Said on-off element is a thin film transistor (TFT); The drain electrode of said on-off element is connected with said data line, and the grid of said on-off element is connected with said gate line, and the source electrode of said on-off element is connected with said storage unit with said voltage selected cell.
Further; Said voltage selected cell comprises: the first film transistor, second thin film transistor (TFT), the 3rd thin film transistor (TFT) and the 4th thin film transistor (TFT); Wherein, The grid of transistorized grid of said the first film and said second thin film transistor (TFT) is connected with the source electrode of said on-off element; The source electrode of transistorized source electrode of said the first film and said second thin film transistor (TFT) is connected with said first pressure-wire; The drain electrode of the grid of said the 3rd thin film transistor (TFT) and drain electrode and said the 4th thin film transistor (TFT) is connected with said second pressure-wire, and the grid of the source electrode of said the 3rd thin film transistor (TFT) and said the 4th thin film transistor (TFT) is connected with said the first film transistor drain, and the drain electrode of the source electrode of said the 4th thin film transistor (TFT) and said second thin film transistor (TFT) is connected with said pixel electrode.
Further, said the first film transistor, said second thin film transistor (TFT), said the 3rd thin film transistor (TFT) and said the 4th thin film transistor (TFT) are the amorphous silicon membrane transistors.
Further; Said voltage selected cell comprises the first film transistor and second thin film transistor (TFT); The grid of transistorized grid of said the first film and said second thin film transistor (TFT) is connected with the source electrode of said on-off element; The transistorized source electrode of said the first film is connected with said first pressure-wire, and the drain electrode of said second thin film transistor (TFT) is connected with said second pressure-wire, and the source electrode of said the first film transistor drain and said second thin film transistor (TFT) is connected with said pixel electrode.
Further, said the first film transistor and said second thin film transistor (TFT) are polycrystalline SiTFTs, and said the first film transistor is the polycrystalline SiTFT of N type, and said second thin film transistor (TFT) is the polycrystalline SiTFT of P type.
Further; Voltage on said second pressure-wire is+10V～+ 30V; Said electrophoretic display device (EPD) also comprises the data drive circuit that is used for providing to said data line data voltage; Said data voltage is-5V～+ 5V, said electrophoretic display device (EPD) also comprises the gate driver circuit that is used for providing to said gate line sweep signal, said sweep signal is-20V～+ 35V.
Accordingly, the present invention also provides a kind of driving method of electrophoretic display device (EPD), comprising: provide sweep signal opening or closing said on-off element to said gate line, and to said data line data voltage is provided; When said gate line is opened said on-off element; When the data voltage on the said data line is high voltage; Said on-off element is delivered to said voltage selected cell with high voltage; Said voltage selected cell imposes on said pixel electrode with the voltage on said first pressure-wire; When said gate line was closed said on-off element, the data voltage that said storage unit maintenance is delivered to said voltage selected cell was a high voltage, and the voltage of said pixel electrode still equals the voltage on said first pressure-wire; When said gate line is opened said on-off element; When the data voltage on the said data line is low-voltage; Said on-off element is delivered to said voltage selected cell with low-voltage; Said voltage selected cell imposes on said pixel electrode with the voltage on said second pressure-wire; When said gate line was closed said on-off element, the data voltage that said storage unit maintenance is delivered to said voltage selected cell was a low-voltage, and the voltage of said pixel electrode still equals the voltage on said second pressure-wire.
Further; Said on-off element is a thin film transistor (TFT); The drain electrode of said on-off element is connected with said data line, and the grid of said on-off element is connected with said gate line, and the source electrode of said on-off element is connected with said storage unit with said voltage selected cell.
Further; Said voltage selected cell comprises: the first film transistor, second thin film transistor (TFT), the 3rd thin film transistor (TFT) and the 4th thin film transistor (TFT); Wherein, The grid of transistorized grid of said the first film and said second thin film transistor (TFT) is connected with the source electrode of said on-off element; The source electrode of transistorized source electrode of said the first film and said second thin film transistor (TFT) is connected with said first pressure-wire; The drain electrode of the grid of said the 3rd thin film transistor (TFT) and drain electrode and said the 4th thin film transistor (TFT) is connected with said second pressure-wire, and the grid of the source electrode of said the 3rd thin film transistor (TFT) and said the 4th thin film transistor (TFT) is connected with said the first film transistor drain, and the drain electrode of the source electrode of said the 4th thin film transistor (TFT) and said second thin film transistor (TFT) is connected with said pixel electrode.
Further, said the first film transistor, said second thin film transistor (TFT), said the 3rd thin film transistor (TFT) and said the 4th thin film transistor (TFT) are the amorphous silicon membrane transistors.
Further; Said voltage selected cell comprises the first film transistor and second thin film transistor (TFT); The grid of transistorized grid of said the first film and said second thin film transistor (TFT) is connected with the source electrode of said on-off element; The transistorized source electrode of said the first film is connected with said first pressure-wire, and the drain electrode of said second thin film transistor (TFT) is connected with said second pressure-wire, and the source electrode of said the first film transistor drain and said second thin film transistor (TFT) is connected with said pixel electrode.
Further, said the first film transistor and said second thin film transistor (TFT) are polycrystalline SiTFTs, and said the first film transistor is the polycrystalline SiTFT of N type, and said second thin film transistor (TFT) is the polycrystalline SiTFT of P type.
Further; Voltage on said first pressure-wire is 0V; Voltage on said second pressure-wire is+10V～+ 30V, said electrophoretic display device (EPD) also comprises the data drive circuit that is used for providing to said data line data voltage, said data voltage is-5V～+ 5V; Said electrophoretic display device (EPD) also comprises the gate driver circuit that is used for providing to said gate line sweep signal, said sweep signal is-and 20V～+ 35V.
Compared with prior art, electrophoretic display device (EPD) provided by the invention and driving method thereof have the following advantages:
1, said electrophoretic display device (EPD) comprises the voltage selected cell; Said voltage selected cell is connected with on-off element, first pressure-wire and second pressure-wire; Said voltage selected cell optionally imposes on pixel electrode with the voltage on said first pressure-wire or said second pressure-wire; Said electrophoretic display device (EPD) need not to dispose the data drive circuit of big driven scope, has reduced production cost.
2, said electrophoretic display device (EPD) also comprises the storage unit that is connected with first pressure-wire with on-off element, and said storage unit can guarantee that after on-off element is closed it is stable that the voltage of pixel electrode keeps, and reduced leakage current, guarantees the display effect of electrophoretic display device (EPD).
Description of drawings
The structural representation of the electrophoretic display device (EPD) that Fig. 1 provides for first embodiment of the invention;
The sequential synoptic diagram of the electrophoretic display device (EPD) that Fig. 2 provides for first embodiment of the invention;
The structural representation of the electrophoretic display device (EPD) that Fig. 3 provides for second embodiment of the invention.
Embodiment
Core concept of the present invention is; A kind of electrophoretic display device (EPD) and driving method thereof are provided; Said electrophoretic display device (EPD) comprises the voltage selected cell, and said voltage selected cell is connected with on-off element, first pressure-wire and second pressure-wire, and said voltage selected cell optionally imposes on pixel electrode with the voltage on first pressure-wire or second pressure-wire; Need not the data drive circuit of big driven scope, reduced production cost.
To combine synoptic diagram that the present invention is described in more detail below, wherein represent the preferred embodiments of the present invention, and should the said those skilled in the art of understanding can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing to those skilled in the art, and not as limitation of the present invention.
For clear, whole characteristics of practical embodiments are not described.In following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development possibly be complicated and time-consuming, but only be routine work to those skilled in the art.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
First embodiment
Please refer to Fig. 1; The structural representation of the electrophoretic display device (EPD) that it provides for first embodiment of the invention; As shown in Figure 1; Electrophoretic display device (EPD) 100 comprises: many data lines 110 intersected with each other and many gate lines 120 and a plurality of pixel cells that are positioned at data line 110 and gate line 120 intersection point places; Wherein each pixel cell comprises: on-off element 130, first pressure-wire 140, second pressure-wire 150, storage unit 160, voltage selected cell 170 and pixel electrode 180, and wherein, storage unit 160 is connected with first pressure-wire 140 with on-off element 130 respectively; Voltage selected cell 170 is connected with on-off element 130, first pressure-wire 140 and second pressure-wire 150 respectively, and 180 of pixel electrodes are connected with voltage selected cell 170.
Said storage unit 160 is MM CAPs, and the voltage that storage unit 160 storage switch elements 130 are carried is so that said voltage after on-off element 130 is closed, can continue to output to voltage selected cell 170.
When gate line 120 is opened on-off element 130; And when the data voltage on the data line 110 is high voltage; On-off element 130 is delivered to voltage selected cell 170 with said high voltage, and voltage selected cell 170 imposes on pixel electrode 180 with the voltage on first pressure-wire 140, when gate line 120 off switch elements 130; The data voltage that 160 maintenances of storage unit are delivered to voltage selected cell 170 is a high voltage, and the voltage of pixel electrode 180 still equals the voltage on first pressure-wire 140; When gate line 120 is opened on-off element 130; And when the data voltage on the data line 110 is low-voltage; On-off element 130 is delivered to voltage selected cell 170 with said low-voltage, and voltage selected cell 170 imposes on pixel electrode 180 with the voltage on second pressure-wire 150, when gate line 120 off switch elements 130; The data voltage that 160 maintenances of storage unit are delivered to voltage selected cell 170 is a low-voltage, and the voltage of pixel electrode 180 still equals the voltage on second pressure-wire 150.
Said voltage selected cell 170 optionally imposes on pixel electrode 180 with the voltage on first pressure-wire 140 or second pressure-wire 150, and electrophoretic display device (EPD) 100 need not to dispose the data drive circuit of big driven scope, has reduced production cost; 160 of said storage unit can guarantee that after on-off element 130 is closed it is stable that the voltage of pixel electrode 180 keeps, and reduced leakage current, guarantees the display effect of said electrophoretic display device (EPD) 100.
In first embodiment of the invention; On-off element 130 is thin film transistor (TFT)s, and wherein, the drain electrode of on-off element 130 is connected with data line 110; The grid of on-off element 130 is connected with gate line 120, and the source electrode of on-off element 130 is connected with storage unit 160 with voltage selected cell 170 respectively.
In first embodiment of the invention; Said voltage selected cell 170 comprises: the first film transistor 171, second thin film transistor (TFT) 172, the 3rd thin film transistor (TFT) 173 and the 4th thin film transistor (TFT) 174; Wherein, The grid of the grid of the first film transistor 171 and second thin film transistor (TFT) 172 all is connected with the source electrode of on-off element 130; The source electrode of the source electrode of the first film transistor 171 and second thin film transistor (TFT) 172 all is connected with first pressure-wire 140; The drain electrode of the grid of the 3rd thin film transistor (TFT) 173 and drain electrode and the 4th thin film transistor (TFT) 174 is connected with second pressure-wire 150, and the grid of the source electrode of the 3rd thin film transistor (TFT) 173 and the 4th thin film transistor (TFT) 174 is connected with the drain electrode of the first film transistor 171, and the drain electrode of the source electrode of the 4th thin film transistor (TFT) 174 and second thin film transistor (TFT) 172 all is connected with pixel electrode 180.
In first embodiment of the invention, said the first film transistor 171, second thin film transistor (TFT) 172, the 3rd thin film transistor (TFT) 173 and the 4th thin film transistor (TFT) 174 all are amorphous silicon film transistors of being processed by amorphous silicon material.
In first embodiment of the invention, the channel width of on-off element 130 is 20 μ m, and the channel length of on-off element 130 is 6 μ m; The channel width of the first film transistor 171 is 180 μ m, and the channel width of the first film transistor 171 is 6 μ m; The channel width of second thin film transistor (TFT) 172 is 6 μ m, and the channel width of second thin film transistor (TFT) 172 is 6 μ m; The channel width of the 3rd thin film transistor (TFT) 173 is 30 μ m, and the channel width of the 3rd thin film transistor (TFT) 173 is 6 μ m; The channel width of the 4th thin film transistor (TFT) 174 is 30 μ m, and the channel width of the 4th thin film transistor (TFT) 174 is 6 μ m; 160 of storage unit are 0.8pf.
In first embodiment of the invention, the voltage on first pressure-wire 140 and second pressure-wire 150 is provided by the peripheral circuit of electrophoretic display device (EPD) 100, wherein; First pressure-wire 140 is ground wires; Voltage on first pressure-wire 140 is 0V, the voltage on second pressure-wire 150 is+and 10V～+ 30V, preferably; Voltage on second pressure-wire 150 is+15V, below will describe real-time mode of the present invention for+15V with the voltage on second pressure-wire 150.
In first embodiment of the invention, electrophoretic display device (EPD) 100 also comprises data drive circuit and gate driver circuit, and said data drive circuit is used for to data line 110 data voltage being provided, and said gate driver circuit is used for to gate line 120 sweep signal being provided.Said electrophoretic display device (EPD) 100 utilizes the data drive circuit of little driving scope that data voltage is provided; Optionally the voltage on first pressure-wire 140 or said second pressure-wire 150 is imposed on pixel electrode 180 through voltage selected cell 170; White particles and black particle that voltage on first pressure-wire 140 or second pressure-wire 150 can drive in the microcapsules carry out electrophoresis, need not the data drive circuit of big driven scope.For example, the data voltage that said data drive circuit provides for-5V～+ 5V, the sweep signal that said gate driver circuit provides for-20V～+ 35V, can satisfy the display requirement of electrophoretic display device (EPD) 100.
First embodiment of the invention also provides a kind of driving method of electrophoretic display device (EPD), and this driving method comprises:
Provide sweep signal opening or closing on-off element 130 to said gate line 120, and data voltage is provided to data line 110;
When gate line 120 is opened on-off element 130; When the data voltage on the data line 110 is high voltage; On-off element 130 is delivered to voltage selected cell 170 with said high voltage, and voltage selected cell 170 imposes on pixel electrode 180 with the voltage on first pressure-wire 140; When gate line 120 off switch elements 130, the data voltage that 160 maintenances of storage unit are delivered to voltage selected cell 170 is a high voltage, and the voltage of pixel electrode 180 still equals the voltage on first pressure-wire 140;
When gate line 120 is opened on-off element 130; When the data voltage on the data line 110 is low-voltage; On-off element 130 is delivered to voltage selected cell 170 with said low-voltage, and voltage selected cell 170 imposes on pixel electrode 180 with the voltage on second pressure-wire 150; When gate line 120 off switch elements 130, the data voltage that 160 maintenances of storage unit are delivered to voltage selected cell 170 is a low-voltage, and the voltage of pixel electrode 180 still equals the voltage on second pressure-wire 140.
Specifically; When gate line 120 is opened on-off element 130, and the data voltage on the data line 110 is when being high voltage, and the first film transistor 171 and second thin film transistor (TFT) 172 are opened; The 4th thin film transistor (TFT) 174 cuts out; At this moment, the voltage of pixel electrode 180 equals the voltage of first pressure-wire 140, and promptly the voltage of pixel electrode 180 is 0V; When the row at this pixel cell place by scanned the time; When on-off element 130 is in closed condition; Because the effect of storage unit 160, the data voltage that can keep being delivered to the first film transistor 171 and second thin film transistor (TFT) 172 is a high voltage, makes the first film transistor 171 and second thin film transistor (TFT) 172 keep open mode; Thereby the voltage that guarantees pixel electrode 180 still equals the voltage of first pressure-wire 140, and promptly the voltage of pixel electrode 180 still is 0V;
Open on-off element 130 and work as gate line 120; When the data voltage on the data line 110 is low-voltage; The first film transistor 171 and second thin film transistor (TFT) 172 are closed, and the 4th thin film transistor (TFT) 174 is opened, at this moment; The voltage of pixel electrode 180 equals the voltage of second pressure-wire 150, and promptly the voltage of pixel electrode 180 is+15V; When the row at this pixel cell place by scanned the time; When on-off element 130 is in closed condition; Because the effect of storage unit 160 guarantees that the voltage of pixel electrode 180 still equals the voltage of second pressure-wire 150, promptly the voltage of pixel electrode 180 still is+15V.
Please refer to Fig. 2, the sequential synoptic diagram of the electrophoretic display device (EPD) that it provides for first embodiment of the invention, and combine Fig. 1, when showing a sub-picture, electrophoretic display device (EPD) will pass through three phases: initial phase H1, show stage H2 and keep stage H3.Wherein, initial phase H1 is shown as complete black or complete white picture, promptly divides the two ends at microcapsules black particle and white particles.In first embodiment of the invention, during initial phase H1, the voltage that transparency conducting layer 190 applies is+15V, and the voltage of pixel electrode 180 then be 0V, and initial phase H1 is shown as and deceives picture entirely; During demonstration stage H2, be that the voltage through making transparency conducting layer 190 is 0V, and make the voltage of pixel electrode 180 reach predetermined GTG; During maintenance stage H3, be to make the voltage of transparency conducting layer 190 and pixel electrode 180 be 0V.The voltage selected cell 170 of said electrophoretic display device (EPD) 100 optionally imposes on pixel electrode 180 with the voltage on first pressure-wire 140 or second pressure-wire 150; Need not the data drive circuit of big driven scope; Reduced production cost, 160 of said storage unit can guarantee that after on-off element 130 is closed it is stable that the voltage of pixel electrode 180 keeps; Reduce leakage current, guarantee the display effect of said electrophoretic display device (EPD) 100.
Second embodiment
Please refer to Fig. 3; The structural representation of the electrophoretic display device (EPD) that it provides for second embodiment of the invention; As shown in Figure 3; Electrophoretic display device (EPD) 200 comprises: many data lines 210 intersected with each other and many gate lines 220 and a plurality of pixel cells that are positioned at data line 210 and gate line 220 intersection point places; Wherein each pixel cell comprises: on-off element 230, first pressure-wire 240, second pressure-wire 250, storage unit 260, voltage selected cell 270 and pixel electrode 280, and wherein, storage unit 260 is connected with first pressure-wire 240 with on-off element 230 respectively; Voltage selected cell 270 is connected with on-off element 230, first pressure-wire 240 and second pressure-wire 250 respectively, and 280 of pixel electrodes are connected with voltage selected cell 270.
Said storage unit 260 is MM CAPs, and the voltage that storage unit 260 storage switch elements 230 are carried is so that said voltage after on-off element 230 is closed, can continue to output to voltage selected cell 270.
Different with first embodiment of the invention is; In second embodiment of the invention; Voltage selected cell 270 comprises two thin film transistor (TFT)s, i.e. the first film transistor 271 and second thin film transistor (TFT) 272, wherein; The grid of the grid of the first film transistor 271 and second thin film transistor (TFT) 272 all is connected with the source electrode of on-off element 230; The source electrode of the first film transistor 271 is connected with first pressure-wire 240, and the drain electrode of second thin film transistor (TFT) 272 is connected with second pressure-wire 250, and the source electrode of the drain electrode of the first film transistor 271 and second thin film transistor (TFT) 272 all is connected with pixel electrode 280.
In second embodiment of the invention; The first film transistor 271 and second thin film transistor (TFT) 272 all are polycrystalline SiTFTs of being processed by polycrystalline silicon material; Wherein, The first film transistor 271 is polycrystalline SiTFTs of N type, and second thin film transistor (TFT) 272 is polycrystalline SiTFTs of P type.
Second embodiment of the invention also provides a kind of driving method of electrophoretic display device (EPD), and this driving method comprises:
Provide sweep signal opening or closing said on-off element 230 to said gate line 220, and data voltage is provided to said data line 210;
When gate line 220 is opened on-off element 230, when the data voltage on the data line 210 was high voltage, the first film transistor 271 was opened; Second thin film transistor (TFT) 272 cuts out; At this moment, the voltage of pixel electrode 280 equals the voltage of first pressure-wire 240, and promptly the voltage of pixel electrode 280 is 0V; When the row at this pixel cell place by scanned the time; During gate line 220 off switch elements 230; Because the effect of storage unit 260, the data voltage that can keep being delivered to the first film transistor 271 is a high voltage, makes the first film transistor 271 keep open mode; Thereby the voltage that guarantees pixel electrode 280 still equals the voltage of first pressure-wire 240, and promptly the voltage of pixel electrode 280 still is 0V;
Open on-off element 230 and work as gate line 220; When the data voltage on the data line 210 is low-voltage; The first film transistor 271 is closed, and second thin film transistor (TFT) 272 is opened, at this moment; The voltage of pixel electrode 280 equals the voltage of second pressure-wire 250, and promptly the voltage of pixel electrode 280 is+15V; When the row at this pixel cell place by scanned the time; During gate line 220 off switch elements 230; Because the effect of storage unit 260 guarantees that the voltage of pixel electrode 280 still equals the voltage of second pressure-wire 250, promptly the voltage of pixel electrode 280 still is+15V.
The voltage selected cell 270 of said electrophoretic display device (EPD) 200 optionally imposes on pixel electrode 280 with the voltage on first pressure-wire 240 or second pressure-wire 250; Need not the data drive circuit of big driven scope, reduced production cost, the voltage that 260 storage switch elements of storage unit 230 are carried; So that said voltage is after on-off element 230 is closed; Continue to output to voltage selected cell 270, can guarantee after on-off element 230 is closed, it is stable that the voltage of pixel electrode 280 keeps; Reduce leakage current, guaranteed the display effect of electrophoretic display device (EPD) 200.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (14)
1. electrophoretic display device (EPD); Comprise many data lines and many gate lines intersected with each other and be positioned at gate line and a plurality of pixel cells at data line intersection point place; Wherein each pixel cell comprises: on-off element, first pressure-wire, second pressure-wire, the voltage selected cell that is connected with said on-off element, said first pressure-wire and said second pressure-wire respectively, and the pixel electrode that is connected with said voltage selected cell; Wherein
Said voltage selected cell comprises: the first film transistor, second thin film transistor (TFT), the 3rd thin film transistor (TFT) and the 4th thin film transistor (TFT); Wherein, The grid of transistorized grid of said the first film and said second thin film transistor (TFT) is connected with the source electrode of said on-off element; The source electrode of transistorized source electrode of said the first film and said second thin film transistor (TFT) is connected with said first pressure-wire; The drain electrode of the grid of said the 3rd thin film transistor (TFT) and drain electrode and said the 4th thin film transistor (TFT) is connected with said second pressure-wire; The grid of the source electrode of said the 3rd thin film transistor (TFT) and said the 4th thin film transistor (TFT) is connected with said the first film transistor drain, and the drain electrode of the source electrode of said the 4th thin film transistor (TFT) and said second thin film transistor (TFT) is connected with said pixel electrode;
The driving scope of the data voltage on the said data line is less than the driving scope of the voltage on said first pressure-wire and second pressure-wire;
When said gate line is opened said on-off element; When the data voltage on the said data line is high voltage; Said on-off element is delivered to said voltage selected cell with high voltage, and said voltage selected cell imposes on said pixel electrode with the voltage on said first pressure-wire; When the data voltage on the said data line was low-voltage, said on-off element was delivered to said voltage selected cell with low-voltage, and said voltage selected cell imposes on said pixel electrode with the voltage on said second pressure-wire.
2. electrophoretic display device (EPD) as claimed in claim 1; It is characterized in that said pixel cell also comprises a storage unit, the voltage that the said on-off element of said cell stores is carried; So that said voltage after said on-off element is closed, continues to output to said voltage selected cell.
3. electrophoretic display device (EPD) as claimed in claim 2 is characterized in that, said storage unit is a MM CAP, and its two ends are connected with said first pressure-wire with said on-off element respectively.
4. electrophoretic display device (EPD) as claimed in claim 3; It is characterized in that; Said on-off element is a thin film transistor (TFT); The drain electrode of said on-off element is connected with said data line, and the grid of said on-off element is connected with said gate line, and the source electrode of said on-off element is connected with said storage unit with said voltage selected cell.
5. electrophoretic display device (EPD) as claimed in claim 4 is characterized in that, said the first film transistor, said second thin film transistor (TFT), said the 3rd thin film transistor (TFT) and said the 4th thin film transistor (TFT) are the amorphous silicon membrane transistors.
6. like any described electrophoretic display device (EPD) in the claim 1 to 5, it is characterized in that the voltage on said first pressure-wire is 0V, the voltage on said second pressure-wire is+10V～+ 30V.
7. electrophoretic display device (EPD) as claimed in claim 6 is characterized in that, also comprises the data drive circuit that is used for providing to said data line data voltage, said data voltage is-and 5V～+ 5V.
8. electrophoretic display device (EPD) as claimed in claim 7 is characterized in that, also comprises the gate driver circuit that is used for providing to said gate line sweep signal, said sweep signal is-and 20V～+ 35V.
9. a driving method that drives electrophoretic display device (EPD) as claimed in claim 2 is characterized in that, comprising:
Provide sweep signal opening or closing said on-off element to said gate line, and data voltage is provided to said data line;
When said gate line is opened said on-off element; When the data voltage on the said data line is high voltage; Said on-off element is delivered to said voltage selected cell with high voltage; Said voltage selected cell imposes on said pixel electrode with the voltage on said first pressure-wire; When said gate line was closed said on-off element, the data voltage that said storage unit maintenance is delivered to said voltage selected cell was a high voltage, and the voltage of said pixel electrode still equals the voltage on said first pressure-wire;
When said gate line is opened said on-off element; When the data voltage on the said data line is low-voltage; Said on-off element is delivered to said voltage selected cell with low-voltage; Said voltage selected cell imposes on said pixel electrode with the voltage on said second pressure-wire; When said gate line was closed said on-off element, the data voltage that said storage unit maintenance is delivered to said voltage selected cell was a low-voltage, and the voltage of said pixel electrode still equals the voltage on said second pressure-wire.
10. driving method as claimed in claim 9; It is characterized in that; Said on-off element is a thin film transistor (TFT); The drain electrode of said on-off element is connected with said data line, and the grid of said on-off element is connected with said gate line, and the source electrode of said on-off element is connected with said storage unit with said voltage selected cell.
11. driving method as claimed in claim 10 is characterized in that, said the first film transistor, said second thin film transistor (TFT), said the 3rd thin film transistor (TFT) and said the 4th thin film transistor (TFT) are the amorphous silicon membrane transistors.
12. like any described driving method in the claim 9 to 11, it is characterized in that the voltage on said first pressure-wire is 0V, the voltage on said second pressure-wire is+10V～+ 30V.
13. driving method as claimed in claim 12 is characterized in that, said electrophoretic display device (EPD) also comprises the data drive circuit that is used for providing to said data line data voltage, said data voltage is-and 5V～+ 5V.
14. driving method as claimed in claim 13 is characterized in that, said electrophoretic display device (EPD) also comprises the gate driver circuit that is used for providing to said gate line sweep signal, said sweep signal is-and 20V～+ 35V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910247414 CN102110416B (en) | 2009-12-29 | 2009-12-29 | Electrophoretic display device and drive method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910247414 CN102110416B (en) | 2009-12-29 | 2009-12-29 | Electrophoretic display device and drive method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102110416A CN102110416A (en) | 2011-06-29 |
| CN102110416B true CN102110416B (en) | 2012-12-12 |
Family
ID=44174553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910247414 Active CN102110416B (en) | 2009-12-29 | 2009-12-29 | Electrophoretic display device and drive method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102110416B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103208258B (en) * | 2012-01-16 | 2015-12-02 | 北京君正集成电路股份有限公司 | Electrophoresis showed control method and device thereof |
| EP3254276A4 (en) * | 2015-02-04 | 2018-07-11 | E Ink Corporation | Electro-optic displays with reduced remnant voltage, and related apparatus and methods |
| CN105674871A (en) * | 2016-04-01 | 2016-06-15 | 威海华菱光电股份有限公司 | Film thickness detection device |
| JP6857982B2 (en) * | 2016-08-10 | 2021-04-14 | イー インク コーポレイション | Active matrix circuit board, display device, display device drive method and electronic equipment |
| CN110610685B (en) * | 2018-06-15 | 2021-02-26 | 元太科技工业股份有限公司 | Pixel circuit |
| CN114267301B (en) * | 2021-12-23 | 2022-11-25 | 北京奕斯伟计算技术股份有限公司 | Electronic paper pixel driving circuit and leakage current optimization method and device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1416537A (en) * | 2001-01-12 | 2003-05-07 | 皇家菲利浦电子有限公司 | Active matrix electrochromic display device |
| CN101060334A (en) * | 2006-04-18 | 2007-10-24 | 三星电子株式会社 | Digital to analog convert and driving method for display device |
| CN101206838A (en) * | 2006-12-23 | 2008-06-25 | Lg.菲利浦Lcd株式会社 | Electrophoretic display and driving method thereof |
| CN101276553A (en) * | 2007-03-29 | 2008-10-01 | 精工爱普生株式会社 | Display system, display device, and method for the same |
-
2009
- 2009-12-29 CN CN 200910247414 patent/CN102110416B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1416537A (en) * | 2001-01-12 | 2003-05-07 | 皇家菲利浦电子有限公司 | Active matrix electrochromic display device |
| CN101060334A (en) * | 2006-04-18 | 2007-10-24 | 三星电子株式会社 | Digital to analog convert and driving method for display device |
| CN101206838A (en) * | 2006-12-23 | 2008-06-25 | Lg.菲利浦Lcd株式会社 | Electrophoretic display and driving method thereof |
| CN101276553A (en) * | 2007-03-29 | 2008-10-01 | 精工爱普生株式会社 | Display system, display device, and method for the same |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2009-224841A 2009.10.22 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102110416A (en) | 2011-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102110416B (en) | Electrophoretic display device and drive method thereof | |
| CN101499239B (en) | Method of driving electrophoretic display device, electrophoretic display device, and electronic apparatus | |
| CN105321462B (en) | Show equipment | |
| KR101234424B1 (en) | Electrophoretic displaying apparatus and method of driving the same | |
| CN102129843B (en) | There is the driving method of variable frame time | |
| US8928570B2 (en) | Method of driving a liquid crystal display device by using polarity reversal of a common voltage | |
| CN101493627B (en) | Electrophoretic display device, method of driving the same, and electronic apparatus | |
| US20100194789A1 (en) | Partial image update for electrophoretic displays | |
| CN103620483A (en) | Liquid crystal drive device and liquid crystal display device | |
| KR101838047B1 (en) | Electrophoresis display device and driving method the same | |
| EP2506247A1 (en) | Pixel circuit and method of operating the same | |
| CN101276122B (en) | Electrophoretic display device, and electronic apparatus | |
| CN102654980B (en) | Electronic paper display device and driving method thereof | |
| US8629879B2 (en) | Electrophoretic display controller providing PIP and cursor support | |
| CN110599936B (en) | Display panel, display detection method thereof and display device | |
| CN110111715A (en) | GOA circuit and display panel | |
| JP2012003231A (en) | Electrophoretic display device and method for driving the same, and electronic apparatus | |
| CN102566190A (en) | Electronic paper device | |
| US20100277453A1 (en) | Method of driving electronic paper | |
| JP2007310265A (en) | Electrophoretic display device | |
| US7443378B2 (en) | Driving apparatus of electronic ink display device and method therefor | |
| US20110187756A1 (en) | Drive control apparatus and drive control method for electrophoretic display unit, electrophoretic display device, and electronic apparatus | |
| CN103137078A (en) | Display device and method for controlling display device | |
| CN102682712B (en) | Electro-optical device and driving method thereof and control device and electronic equipment | |
| JP2011059525A (en) | Electrophoretic display element and method of driving the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |