CN102104113A - Method for modulating threshold voltage of organic field effect transistor - Google Patents
Method for modulating threshold voltage of organic field effect transistor Download PDFInfo
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- CN102104113A CN102104113A CN200910311849XA CN200910311849A CN102104113A CN 102104113 A CN102104113 A CN 102104113A CN 200910311849X A CN200910311849X A CN 200910311849XA CN 200910311849 A CN200910311849 A CN 200910311849A CN 102104113 A CN102104113 A CN 102104113A
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Abstract
The invention provides a method for modulating threshold voltage of an organic field effect transistor, which comprises the following steps: providing an organic field effect transistor; irradiating an organic semiconductor layer of the organic field effect transistor with a light source according to a desired threshold voltage; applying a voltage pulse to the organic field effect transistor; and after a preset time, the voltage pulse and the light source are withdrawn successively or simultaneously. By the technical scheme, the problems of complexity and low degree of freedom of the conventional modulation method of the organic semiconductor field effect transistor are solved, the threshold voltage of the modulated organic field effect transistor can be kept for a long time, and the method has high degree of freedom and is easy to adjust the organic field effect transistor.
Description
Technical field
The present invention relates to semiconductor applications, in particular to the modulator approach of organic field effect tube threshold voltage.
Background technology
Along with the development of information technology, increasing to the demand of low cost, flexibility, low weight, portable electronic product; Traditional organic field effect tube and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and the organic microelectric technique based on the organic polymer semi-conducting material that therefore can realize these characteristics has obtained people and more and more paid close attention under this trend.
Organic field effect tube is as the base components of organic circuit, and its performance is to the performance decisive role of circuit.Wherein mobility has determined the speed of organic field effect tube work, and then influences the operating frequency of circuit; Voltage comprises operating voltage and threshold voltage, has determined the power consumption of organic field effect tube and circuit.Usually the operating voltage of organic field effect tube is all at tens of volts, and therefore reduce its operating voltage is a research focus in this field always.Along with the change of threshold voltage, transistor can be divided into two kinds of enhancement mode and depletion types.The former is when gate voltage is zero, there is the electric charge that can move freely seldom in the raceway groove, the electric current that obtains after applying voltage on the source-drain electrode is very little, has only after applying bigger gate voltage could produce more free carrier in the raceway groove, thereby produces bigger electric current.The latter is when gate voltage is zero, exist many free carriers in the raceway groove, on source-drain electrode, apply voltage and just can obtain no small electric current, it is minimum that the voltage that only applies a contrary sign could make that the concentration of electric charges that can move freely in the raceway groove drops to, thereby make the electric current in the raceway groove be reduced to minimum.The organic field effect tube of enhancement mode has very low quiescent dissipation as can be seen.Because according to the actual requirements, this organic field effect tube of two types all has its corresponding use.Therefore how to regulate threshold voltage, it is an important content of organic field effect tube research that organic field effect tube is transformed in these two types always.
At present, main modulator approach is by changing the dimensional parameters of organic field effect tube in the course of processing, change membrane structure by modifying interface, change the depositing of thin film condition, select different dielectric materials for use, adopt technology such as double grid electrode structure, these technology or increase function difficulty, or make the complexity that the organic field effect tube structure becomes, and the modulation degree of freedom of threshold voltage is very low, the fixing back of modulation just can not change again, therefore has great limitation.
Summary of the invention
At proposing the present invention by changing organic field effect tube size modulation theresholds voltage ten minutes challenge in the correlation technique.For this reason, main purpose of the present invention is to provide a kind of modulator approach of organic field effect tube threshold voltage, one of to address the above problem at least.
In view of above-mentioned, the invention provides a kind of modulator approach of organic field effect tube threshold voltage, this method comprises: provide field effect transistors; Utilize the organic semiconductor layer of light source irradiation organic field effect tube according to required threshold voltage; Organic field effect tube is applied potential pulse; Through after the scheduled time successively or cancel potential pulse and light source simultaneously.
Wherein, light source comprises at least a in visible light source, infrared light supply, the ultraviolet source.
Wherein, threshold voltage is less than described potential pulse.
Wherein, the intensity of the scheduled time and light source is inversely proportional to, and by mobility of charge carrier speed decision in the material of organic semiconductor layer.
Wherein, organic field effect tube comprises: dielectric substrate; Be positioned at the gate electrode on the dielectric substrate, gate electrode covers the subregion of dielectric substrate; Cover the gate dielectric layer of dielectric substrate and gate electrode; Be positioned at source electrode, drain electrode on the gate dielectric layer; Organic semiconductor layer, organic semiconductor layer above gate dielectric layer and source electrode, the drain electrode or organic semiconductor layer between gate dielectric layer and source electrode, drain electrode.
Wherein, dielectric substrate comprises a kind of in silicon chip, glass and the plastics with insulation film.
By technique scheme of the present invention, adopt light source irradiation to combine with potential pulse, can solve the modulator approach complexity of present organic semiconductor field effect transistor, the problem on degree of freedom ground, and the threshold voltage of modulation back organic field effect tube can keep the long period, this method degree of freedom is big, is easy to adjust organic field effect tube.
Other features and advantages of the present invention will be set forth in the following description, and, partly from specification, become apparent, perhaps understand by implementing the present invention.Purpose of the present invention and other advantages can realize and obtain by specifically noted structure in the specification of being write, claims and accompanying drawing.
Description of drawings
Fig. 1 is the structure chart according to the organic field effect tube of the embodiment of the invention;
Fig. 2 is the flow chart according to the modulator approach of a kind of organic field effect tube threshold voltage of the embodiment of the invention;
Fig. 3 is the curve chart according to the pulse modulation result of first preferred embodiment of the invention;
Fig. 4 is the curve chart according to the pulse modulation result of second preferred embodiment of the invention.
Embodiment
Functional overview
In embodiments of the present invention, a kind of threshold voltage scheme of modulating organic field effect tube is provided, in this implementation, organic field effect tube has been carried out irradiation by adopting light source, it is applied potential pulse, modulating the threshold voltage of this organic field effect tube.
Need to prove that under the situation of not conflicting, embodiment and the feature among the embodiment among the application can make up mutually.Describe the present invention below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
According to embodiments of the invention, provide a kind of modulator approach of threshold voltage of organic field-effect tube.Before this method of description, the preferred organic field effect tube that is used to implement this method is described at first.
As shown in Figure 1, this organic field effect tube can be an apical grafting touch structure, also can be end contact structure.Concrete, this organic field effect tube comprises dielectric substrate 11, dielectric substrate comprises but is not limited to grow the silicon chip of insulation film, glass and plastic film; Be positioned at the gate electrode 12 on the dielectric substrate 11, gate electrode 12 covers the subregion of dielectric substrate 11, the material of gate electrode 12 includes but not limited to gold, platinum, silver, copper, nickel, aluminium, titanium, iron, chromium metallic conduction material and gathers 3,4-ethene dioxythiophene/polystyrolsulfon acid (PEDOT:PSS) conductive organic matter; Cover the gate dielectric layer 13 of dielectric substrate 11 and gate electrode 12, the material of gate dielectric layer 13 includes but not limited to that silica, silicon nitride, zirconia, aluminium oxide, tantalum oxide, hafnium oxide inorganic dielectric material and polyimides (PI), polyethylene arsenic presses against alkane ketone (PVP), polymethyl acrylate (PMMA), Parylene (parylene) organic media material; Be positioned at source electrode 14 and drain electrode 15 on the gate dielectric layer 13, its material includes but not limited to gold, platinum, silver, copper, nickel, aluminium, titanium, iron, chromium metal material and PEDOT:PSS conductive organic matter; Organic semiconductor layer 16 is between gate dielectric layer 13 and source electrode 14, drain electrode 15, and the material of organic semiconductor layer includes but not limited to, pentacene, CuPc (CuPc), poly-3-hexyl thiophene (P3HT), thiophene and red glimmering rare machine semi-conducting material.Certainly, organic semiconductor layer 16 also can be positioned at gate dielectric layer 13 and source electrode 14, drain electrode 15 tops, it is not limited at this.
Adopt light source that organic field effect tube is carried out irradiation, connect voltage pulse generation device at gate electrode.
Fig. 2 is that as shown in Figure 2, this method comprises the steps: according to the flow chart of the modulator approach of a kind of organic field effect tube threshold voltage of the embodiment of the invention
Step 202 provides field effect transistors, and this organic field effect tube as mentioned above;
Step 204 is utilized the organic semiconductor layer of light source irradiation organic field effect tube according to required threshold voltage;
Step 206 applies potential pulse to organic field effect tube;
Step 208, through after the scheduled time successively or cancel potential pulse and light source simultaneously.
Wherein, light source can be visible light, ultraviolet light or infrared light, and visible light can be white light or monochromatic light.The potential pulse mechanism must be carried out under the situation of lasting light irradiation, illumination and potential pulse can cancel simultaneously or cancel potential pulse earlier after cancel illumination.Simultaneously, generally speaking, threshold voltage is less than described potential pulse.Simultaneously, the intensity of the scheduled time and light source is inversely proportional to, and by mobility of charge carrier speed decision in the material of organic semiconductor layer.
Utilize this method, the degree of freedom of modulation is big, can arbitrarily adjust the symbol and the numerical value of the threshold voltage of organic field effect tube, and is repeatable higher, and repeatedly the result error of modulation is smaller.Simultaneously, this method controllability height, and be not subjected to material, the structural limitations of organic field effect tube, also need not to increase extra technology, after preparing, organic field effect tube, can not damage organic field effect tube in the modulated process just according to actual needs to its modulation.
Now illustrate according to the first preferred embodiment of the invention and second preferred embodiment.Be test purpose, the transistor that is adopted among the embodiment is an apical grafting touch structure, heavily doped monocrystalline silicon is as gate electrode, the 30nm aluminium oxide of ald preparation is as gate dielectric layer, the pentacene thin film of the 50nm of vacuum thermal evaporation deposition is as organic semiconductor layer, and the gold thin film of the 50nm of electron-beam evaporation is as source, drain electrode.
First preferred embodiment
In the present embodiment, adopt voltage pulse width to fix, the mode of changes in amplitude is regulated its threshold voltage to organic field effect tube is carried out irradiation.Adopt white light as light source, voltage pulse width is 300s, under the white light that continues 300s, uses the potential pulse of different amplitudes to be applied to organic field effect tube, the pulse of organic field effect tube can be adjusted to 6V from-2V.As shown in Figure 3, utilize the relation between gate source voltage and the leakage current to describe.When initial, the threshold voltage of this organic field effect tube is about 2V, source-drain voltage V
Ds=-3V then under the condition of light source irradiation, applies V to gate electrode
PulseThe potential pulse of=-6V makes that the threshold voltage adjustments of organic field effect tube is 0V, is applying V subsequently
PulseThe potential pulse of=-9V makes threshold voltage adjustments be-2V, at this moment, organic field effect tube be the enhancement mode organic field effect tube.Organic field effect tube is applied V
PulseThe potential pulse of=1V makes its threshold voltage recovering to 1V, and at this moment, organic field effect tube changes depletion type into.Subsequently, continue organic field effect tube is applied V
Pulse=3V, V
Pulse=5V, V
PulseThe potential pulse of=7V, its threshold value is adjusted to 2.5V, 4.4V, 6V respectively.
Second preferred embodiment
Transistor arrangement territory first preferred embodiment that adopts in the present embodiment identical.Adopt white light as light source.In the present embodiment, adopt the potential pulse amplitude constant and mode that width changes is carried out irradiation to organic field effect tube, its threshold voltage of adjuster.At first, the potential pulse of employing-6V, with the threshold voltage adjustments of organic field effect tube to 0V, source-drain voltage V
Ds=-3V, then adopt the potential pulse of 3V that gate electrode is had an effect, make it reach different threshold voltages by the width of adjusting potential pulse, and use at every turn after the effect of 3V potential pulse again that the potential pulse of employing-6V makes the voltage of organic field effect tube return to same position.As shown in Figure 4, utilize the relation between gate source voltage and the leakage current to describe.The pulse of employing 4s, 10s, 20s, 50s, 70s, 100s and 300s can be so that the threshold voltage of this organic field effect tube reaches 0.3V, 1.6V, 2V, 2.3V, 2.4V, 2.5V and 2.6V from 0V respectively.Therefrom action time is long more as can be seen, and the modulation amplitude of threshold voltage is big more, but after exceeding certain hour, modulation effect can be more and more not obvious.This shows that the impulse action of employing different time width can be modulated the threshold voltage of organic field effect tube.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the modulator approach of an organic field effect tube threshold voltage is characterized in that, described method comprises:
Provide field effect transistors;
Utilize the organic semiconductor layer of the described organic field effect tube of light source irradiation according to required threshold voltage;
Described organic field effect tube is applied potential pulse;
Through after the scheduled time, successively or simultaneously cancel potential pulse and light source.
2. modulator approach according to claim 1 is characterized in that, described light source comprises at least a in visible light source, infrared light supply, the ultraviolet source.
3. modulator approach according to claim 2 is characterized in that described threshold voltage is less than described potential pulse.
4. modulator approach according to claim 3 is characterized in that the intensity of the described scheduled time and light source is inversely proportional to, and by mobility of charge carrier speed decision in the material of organic semiconductor layer.
5. modulator approach according to claim 1 is characterized in that, described organic field effect tube comprises:
Dielectric substrate;
Be positioned at the gate electrode on the dielectric substrate, described gate electrode covers the subregion of dielectric substrate;
Cover the gate dielectric layer of described dielectric substrate and described gate electrode;
Be positioned at source electrode, drain electrode on the described gate dielectric layer;
Organic semiconductor layer, described organic semiconductor layer above gate dielectric layer and described source electrode, the drain electrode or described organic semiconductor layer between described gate dielectric layer and described source electrode, drain electrode.
6. modulator approach according to claim 5 is characterized in that, described dielectric substrate comprises a kind of in silicon chip, glass and the plastics with insulation film.
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| CN110783203A (en) * | 2019-10-28 | 2020-02-11 | 深圳尚阳通科技有限公司 | Method for reducing threshold voltage of MOSFET after radiation recovery |
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| JP2005228968A (en) * | 2004-02-13 | 2005-08-25 | Sharp Corp | Field effect transistor, and image display device and semiconductor device using the transistor |
| CN101465364A (en) * | 2007-12-18 | 2009-06-24 | 索尼株式会社 | Solid-state imaging device and camera |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005228968A (en) * | 2004-02-13 | 2005-08-25 | Sharp Corp | Field effect transistor, and image display device and semiconductor device using the transistor |
| CN101465364A (en) * | 2007-12-18 | 2009-06-24 | 索尼株式会社 | Solid-state imaging device and camera |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110783203A (en) * | 2019-10-28 | 2020-02-11 | 深圳尚阳通科技有限公司 | Method for reducing threshold voltage of MOSFET after radiation recovery |
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