CN102097941A - Dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet - Google Patents
Dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet Download PDFInfo
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- CN102097941A CN102097941A CN2010106232911A CN201010623291A CN102097941A CN 102097941 A CN102097941 A CN 102097941A CN 2010106232911 A CN2010106232911 A CN 2010106232911A CN 201010623291 A CN201010623291 A CN 201010623291A CN 102097941 A CN102097941 A CN 102097941A
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Abstract
The invention provides a dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet, belonging to the technical field of large power semiconductor switches. The power cabinet provided by the invention comprises an inverted power unit cabinet, a capacitor cabinet and a rectified power unit cabinet, wherein each inverted or rectified power unit cabinet in the invention comprises three groups of inverted/rectified power module units; each group of the inverted/rectified power module units are provided with more than four IGCT (integrated gate commutated thyristor) elements to constitute one phase of inverted/rectified output; and the capacitor cabinet is provided with auxiliary circuits such as a direct current capacitor, a water supplying/returning vertical main pipe, a capacitor precharging circuit, parallel resistors, an anti-parallel diode and the like, as well as corresponding bus bars and the like.
Description
Technical field
The invention belongs to the semiconductor switch technical field, a kind of pair of PWM integral gate change transistor (The Integrated Gate Commutated Thyristor particularly is provided, be called for short IGCT) three level power cabinets, it is applicable in 3～27MVA high-power converter, presses transmission field in can being widely used in.
Background technology
Integral gate change transistor IGCT is the power semiconductor switch that Switzerland ABB AB aims at the medium voltage frequency converter exploitation.It is the modified form device of on the basis of turn-off thyristor GTO, being done, it is as a kind of novel power electronic device, GTO chip and inverse parallel diode and gate drive circuit are integrated, be connected in low inductance mode in the periphery with its gate driver again, combine the advantage of transistor and two kinds of devices of thyristor, i.e. the stable turn-off capacity of transistor and the low on-state loss of thyristor.IGCT is in the performance of conduction period performance thyristor, and off-phases is and is similar to characteristics of transistor.IGCT has that electric current is big, voltage is high, switching frequency is high, reliability is high, compact conformation, the low characteristics of loss.
IGCT integrates the speed-sensitive switch characteristic of IGBT (insulation gate pole bipolar transistor) and high blocking voltage and the low conduction loss characteristic of GTO (gate turn off thyristor).The high-speed switch ability of IGCT need not buffer circuit, thereby required power component number still less, and reliability of operation is higher.The application technology of IGCT is very ripe in the world at present, but but also is in the starting stage at home, does not also have the matured product of IGCT current transformer to come out.Complete IGCT active rectifying circuit or inverter circuit comprise IGCT, inverse parallel diode, clamp circuit device etc., if these elements are disperseed to be electrically connected with bus or lead after the assembling again, not only its to take volume bigger, and the line loop area is bigger, thereby causes the circuit stray inductance to increase.The increase of stray inductance can make the shutoff voltage of IGCT raise, and at this time for the safety that guarantees IGCT just must reduce output current, thereby causes reducing of power output.In addition, the (PCC) power of IGCT disperses to install, and also is unfavorable for the carrying out of maintenance work.
Summary of the invention
Purpose of the present invention is at high-power three level that adopt power electronic device such as IGCT pulse width modulation frequency changing device back-to-back, a kind of minimizing circuit stray inductance is proposed, improve the modular structure of device fan-out capability, be convenient to install winding, applicable to different engine requests.
A kind of pair of PWM integral gate change transistor three-level power cabinet, the device of forming by inverter power unit cabinet 1, capacitor box 2 and rectified power unit cabinet 3.Comprise three groups of separate inversion/rectified power modular units 4 in every inversion or the rectified power unit cabinet, have four or more IGCT element on every group of inversion/rectified power modular unit, constitute a phase of inversion/rectification output.Because two PWM integral gate change transistor three-level power cabinets adopt the circuit structure of formula back-to-back, make that inversion/rectified power modular unit is structurally identical, so the structure of inverter power unit cabinet and rectified power unit cabinet are also in full accord.
The overall dimensions of inverter power unit cabinet 1 are that (the wide x of high x is dark, unit: mm) for 2500x1200x1500.In cabinet, be divided into three layers in from top to bottom, arrange one group of inversion/rectified power modular unit 4 for every layer, every pack module unit is a mutually complete brachium pontis.All have an IGCT power supply 5 on every group of inversion/rectified power modular unit 4, being designed to of IGCT power supply 5 one dragged a plurality of forms, i.e. IGCT power supply that IGCT power supply 5 can be a phase brachium pontis simultaneously.IGCT power supply 5 among the present invention, the inverter power unit cabinet 1 unified left side that is placed on inversion/rectified power modular unit 4; The rectified power unit cabinet 3 unified right sides that are placed on inversion/rectified power modular unit 4.Inverter power unit cabinet 1 is divided into front portion, middle part, rear portion on depth direction, inversion/rectified power modular unit 4 is positioned at forward position, cabinet middle part, the female pipe in anterior arrangement unit water route, and the rear portion is the unit dc bus and exchange busbar and measuring component.Because inversion/rectified power modular unit 4 volumes are relatively large, show slightly crowded in two power cell cabinets, therefore layout is also comparatively simple in the power cell cabinet, and except the inversion/rectified power modular unit 4 of cabinet middle part layered arrangement, only there are part overlap joint busbar and measuring component in the cabinet rear portion.Such design makes whole inverter power unit cabinet 1 be divided into three functional areas, and water route and circuit separate, and are convenient to installation and maintenance, avoided the interference between each interface, and structure function are clear.
The overlap joint busbar at rear portion is divided into two parts in inversion/rectified power cabinet, dc bus overlap joint busbar 10 and ac bus overlap joint busbar 9.For dc bus overlap joint busbar 10, need to reduce as much as possible its stray inductance in design, help improving the IGCT turn-off characteristic like this.For this reason, dc bus overlap joint busbar 10 is arranged in electric capacity power cabinet 2 and inverter power unit cabinet 1 or rectified power unit cabinet 3 joining places, directly the unit dc bus 12 of whole capacitor laminating dc bus 11 with inversion/rectified power modular unit 4 is linked to each other.This busbar is similarly three stack structures layer by layer, middlely separates with insulation board, guarantees insulation.This connected mode makes that the connection bus between electric capacity and the power model unit 4 is the shortest, has reduced stray inductance therebetween effectively, and is convenient to change, safeguard.When need changing inversion/rectified power modular unit 4, only need with direct current overlap busbar 10 and power model unit unit dc bus 12 be connected disconnection, whole modular unit integral body can be shifted out.The effect that exchanges overlap joint busbar 9 is to draw three-phase alternating current from inverter power unit cabinet 1 or rectified power unit cabinet 3, and in AC side, need not consider distribution parameters such as stray inductance.Therefore the design that exchanges overlap joint female 9 is considered from the angle of using, safeguard fully, should offer convenience for using, installing as much as possible.
The overall dimensions of capacitor box 2 are that (the wide x of high x is dark for 2500x1000x1500, unit: mm), mainly contain dc capacitor 6 in the cabinet, the vertical main 8 of the confession/backwater of cooling water system, electric capacity pre-charge circuit 13, auxiliary circuit 14 and corresponding busbars such as parallel resistance and inverse parallel diode.Consistent with inverter power unit cabinet 1, capacitor box 2 depth directions also can be divided into three parts, front portion, middle part, rear portion.The middle part mainly is the dc capacitor group, and 6 fens two layers of cloth of dc capacitor place capacitor box 2, have occupied capacitor box 2 central space.6 of dc capacitors leave the space, guarantee that electric capacity normally dispels the heat.Install the vertical main 8 of confession/backwater of water-cooling system except being used to the front portion, also utilizes the anteriomedial narrow space that precharge transformer 7 is installed, and it holds up with crossbeam and places capacitor box 2 bottoms.The electric capacity pre-charge circuit is divided into precharge transformer 7 and charging circuit 13.At the cabinet rear portion charging circuit 13 is made a monoblock circuit board, vertically be installed on capacitor box 2 curb girders.2 have also installed auxiliary circuits 14 such as parallel resistance and inverse parallel diode in the capacitor box.Parallel resistance is in order to guarantee that under the situation that discharge circuit lost efficacy through after the sufficiently long time, dc capacitor still can discharge by parallel resistance.The effect of inverse parallel diode is to prevent the dc capacitor reverse charging.This two parts auxiliary circuit all designs in the side of capacitor box 2, utilizes the cabinet curb girder to install.The benefit of this design is the space of having saved in the capacitor box 2, has effectively utilized the narrow space of capacitor box 2 sides.For the inverse parallel diode, also reduced the distance between diode and dc capacitor, make connection busbar stray inductance minimum between the two.
The invention advantage of a kind of pair of PWM integral gate change transistor three-level power cabinet is: adopt the circuit structure of formula back-to-back, make that inversion and rectified power modular unit are structurally identical, so the structure of inverter power unit cabinet and rectified power unit cabinet is also in full accord.Each power electronic element in the IGCT application circuit is integrated in an inverter power unit cabinet or the rectified power unit cabinet, has effectively reduced and taken volume.Adopt diode clamp formula three-phase tri-level inverter circuit structure, improved electric pressure, solved the problem of power electronic element device withstand voltage deficiency, reduced the circuit stray inductance, improved the fan-out capability of device.The consistency and the homogeny of inversion/rectified power modular unit help the work such as installation, debugging and maintenance of power cell cabinet, have improved operating efficiency, also stop maintenance and the maintenance work of cabinet time for minimum simultaneously and lay the foundation.Loading and unloading are convenient, compact conformation, and volume is less.
Description of drawings
Fig. 1 is two PWM integral gate change transistor three-level power cabinet circuit diagrams.
Fig. 2 is two PWM integral gate change transistor three-level power cabinet structure charts (front), wherein, the confession/backwater main 8 of inverter power unit cabinet 1, capacitor box 2, rectified power unit cabinet 3, inversion/rectified power modular unit 4, IGCT power supply 5, dc capacitor 6, precharge transformer 7, water-cooling system
Fig. 3 is two PWM integral gate change transistor three-level power cabinet structure charts (back side), wherein, auxiliary circuits 14 such as ac bus overlap joint busbar 9, dc bus overlap joint busbar 10, capacitor laminating dc bus 11, unit dc bus 12, charging circuit 13, parallel resistance and inverse parallel diode.
Embodiment
Fig. 2 is one embodiment of the present invention, is made up of inverter power unit cabinet 1, capacitor box 2 and rectified power unit cabinet 3.Comprise three groups of separate inversion/rectified power modular units 4 in every inversion or the rectified power unit cabinet, have four or more IGCT element on every group of inversion/rectified power modular unit, constitute a phase of inversion/rectification output.Because two PWM integral gate change transistor three-level power cabinets adopt the circuit structure of formula back-to-back, make that inversion/rectified power modular unit is structurally identical, so the structure of inverter power unit cabinet and rectified power unit cabinet are also in full accord.The overall dimensions of inverter power unit cabinet are that (the wide x of high x is dark, unit: mm) for 2500x1200x1500.In cabinet, be divided into three layers in from top to bottom, arrange one group of inversion/rectified power modular unit 4 for every layer.The overall dimensions of capacitor box 2 cabinets are that (the wide x of high x is dark for 2500x1000x1500, unit: mm), mainly contain dc capacitor 6 in the cabinet, the vertical main 8 of the confession/backwater of cooling water system, electric capacity pre-charge circuit 13, auxiliary circuit 14 and corresponding busbars such as parallel resistance and inverse parallel diode.
Claims (2)
1. two PWM integral gate change transistor three-level power cabinet, it is characterized in that: power cabinet is made up of inverter power unit cabinet (1), capacitor box (2) and rectified power unit cabinet (3); Inverter power unit cabinet comprises three groups of separate inversion/rectified power modular units, has four or more IGCT element on every group of inversion/rectified power modular unit; Constitute a phase of inversion output; Comprise three groups of separate inversion/rectified power modular units in the rectified power unit cabinet, have on every group of inversion/rectified power modular unit and the rectified power unit IGCT element that cashier's office in a shop quantity is identical, constitute a phase of rectification output;
Inverter power unit cabinet (1) and rectified power unit cabinet (3) all are divided into three layers in from top to bottom, arrange one group of inversion/rectified power modular unit for every layer, and every pack module unit is a mutually complete brachium pontis; All have an IGCT power supply (5) on every group of inversion/rectified power modular unit, an IGCT power supply (5) is the IGCT power supply of a phase brachium pontis simultaneously; Inverter power unit cabinet (1) IGCT power supply, the unified left side that is placed on inversion/rectified power modular unit; Rectified power unit cabinet (3) IGCT power supply, the unified right side that is placed on inversion/rectified power modular unit; Inverter power unit cabinet (1) is divided into front portion, middle part, rear portion on depth direction, inversion/rectified power modular unit (4) is positioned at forward position, cabinet middle part, the female pipe in anterior arrangement unit water route, rear portion are the unit dc buss and exchange busbar and measuring component.
The overlap joint busbar at rear portion is divided into dc bus overlap joint busbar and ac bus overlap joint busbar in inverter power cabinet or the rectified power cabinet; Dc bus overlap joint busbar is arranged in electric capacity power cabinet (2) and inverter power unit cabinet (1) or rectified power unit cabinet (3) joining place, directly the unit dc bus of whole capacitor laminating dc bus with inversion/rectified power modular unit is linked to each other; The effect that exchanges the overlap joint busbar is to draw three-phase alternating current from inverter power unit cabinet (1) or rectified power unit cabinet (3), and in AC side, need not consider the stray inductance distributed constant;
Capacitor box (2) comprises the vertical main of confession/backwater (8), electric capacity pre-charge circuit (13) and parallel resistance and the inverse parallel diode auxiliary circuit (14) and the corresponding busbar of dc capacitor (6), cooling water system; Capacitor box (2) depth direction is divided into three parts, front portion, middle part, rear portion; The middle part is the dc capacitor group, and dc capacitor branch two layers of cloth places capacitor box (2) central space, leaves the space between each dc capacitor, guarantees that electric capacity normally dispels the heat; Anterior vertical main of confession/backwater (8) and the precharge transformer (7) that water-cooling system is installed, it holds up with crossbeam and places capacitor box (2) bottom; The electric capacity pre-charge circuit is divided into precharge transformer (7) and electric capacity pre-charge circuit (13); At the cabinet rear portion electric capacity pre-charge circuit (13) is made a monoblock circuit board, vertically be installed on capacitor box (2) curb girder; Capacitor box (2) is installed parallel resistance and inverse parallel diode auxiliary circuit (14); Parallel resistance is to guarantee under the situation that discharge circuit lost efficacy, and through after the sufficiently long time, dc capacitor still can discharge by parallel resistance; The inverse parallel diode is used to prevent the dc capacitor reverse charging; This two parts auxiliary circuit all designs in the side of capacitor box (2), utilizes the cabinet curb girder to install.
2. as claimed in claim 1 pair of PWM integral gate change transistor three-level power cabinet is characterized in that: described dc bus overlap joint busbar is three stack structures layer by layer, middlely separates with insulation board; When need changing inversion/rectified power modular unit, direct current is overlapped busbar and power model unit the unit dc bus be connected disconnection after, whole modular unit integral body is shifted out.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010623291 CN102097941B (en) | 2010-12-30 | 2010-12-30 | Dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet |
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| CN 201010623291 CN102097941B (en) | 2010-12-30 | 2010-12-30 | Dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet |
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| CN102097941B CN102097941B (en) | 2012-12-26 |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102340256A (en) * | 2011-09-20 | 2012-02-01 | 北京金自天正智能控制股份有限公司 | GTO (gate-turn-off thyristor) water-cooling inversion power module |
| CN103138184A (en) * | 2011-12-01 | 2013-06-05 | 永济新时速电机电器有限责任公司 | Locomotive converter cabinet |
| CN103166478A (en) * | 2013-03-07 | 2013-06-19 | 上海交通大学 | High voltage integration gate pole reversing thyristor five-level power cabinet |
| CN103178721A (en) * | 2013-04-07 | 2013-06-26 | 冶金自动化研究设计院 | High-capacity five-level converter power cabinet |
| CN103219909A (en) * | 2013-03-29 | 2013-07-24 | 上海交通大学 | Integrated gate commutated thyristor five-level power module |
| CN104201866A (en) * | 2014-09-16 | 2014-12-10 | 北京金自天正智能控制股份有限公司 | Insulated gate bipolar transistor three-level power cabinet |
| WO2016082325A1 (en) * | 2014-11-29 | 2016-06-02 | 中山大洋电机股份有限公司 | Motor controller |
| CN106487255A (en) * | 2016-11-04 | 2017-03-08 | 中车株洲电力机车研究所有限公司 | Current transformer |
| CN109194092A (en) * | 2018-08-03 | 2019-01-11 | 卧龙电气集团辽宁荣信电气传动有限公司 | A kind of modularization water cooling power cell and signal acquisition method |
| CN109245563A (en) * | 2018-11-15 | 2019-01-18 | 北京金自天正智能控制股份有限公司 | A kind of power cabinet for large capacity synchronous machine stationary frequency starting |
| CN110311537A (en) * | 2018-03-21 | 2019-10-08 | 中车株洲电力机车研究所有限公司 | Power cabinet and current transformer |
| WO2020108412A1 (en) * | 2018-11-28 | 2020-06-04 | 深圳市禾望电气股份有限公司 | Power module and electric power electronic device |
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| CN103986340B (en) | 2014-05-23 | 2017-10-10 | 台达电子企业管理（上海）有限公司 | Supply convertor |
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| JPH0923638A (en) * | 1995-07-07 | 1997-01-21 | Ricoh Co Ltd | Power supply |
| CN101001044A (en) * | 2007-01-04 | 2007-07-18 | 冶金自动化研究设计院 | High-tension integral gate change transistor three-level frequency-converter power cabinet |
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2010
- 2010-12-30 CN CN 201010623291 patent/CN102097941B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0923638A (en) * | 1995-07-07 | 1997-01-21 | Ricoh Co Ltd | Power supply |
| CN101001044A (en) * | 2007-01-04 | 2007-07-18 | 冶金自动化研究设计院 | High-tension integral gate change transistor three-level frequency-converter power cabinet |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102340256A (en) * | 2011-09-20 | 2012-02-01 | 北京金自天正智能控制股份有限公司 | GTO (gate-turn-off thyristor) water-cooling inversion power module |
| CN103138184B (en) * | 2011-12-01 | 2015-09-16 | 永济新时速电机电器有限责任公司 | locomotive converter cabinet |
| CN103138184A (en) * | 2011-12-01 | 2013-06-05 | 永济新时速电机电器有限责任公司 | Locomotive converter cabinet |
| CN103166478A (en) * | 2013-03-07 | 2013-06-19 | 上海交通大学 | High voltage integration gate pole reversing thyristor five-level power cabinet |
| CN103166478B (en) * | 2013-03-07 | 2016-02-10 | 上海交通大学 | A kind of high-tension integral gate change transistor five level power cabinet |
| CN103219909A (en) * | 2013-03-29 | 2013-07-24 | 上海交通大学 | Integrated gate commutated thyristor five-level power module |
| CN103178721B (en) * | 2013-04-07 | 2015-09-02 | 冶金自动化研究设计院 | A kind of high-capacity five-level converter power cabinet |
| CN103178721A (en) * | 2013-04-07 | 2013-06-26 | 冶金自动化研究设计院 | High-capacity five-level converter power cabinet |
| CN104201866A (en) * | 2014-09-16 | 2014-12-10 | 北京金自天正智能控制股份有限公司 | Insulated gate bipolar transistor three-level power cabinet |
| CN104201866B (en) * | 2014-09-16 | 2017-02-08 | 北京金自天正智能控制股份有限公司 | Insulated gate bipolar transistor three-level power cabinet |
| WO2016082325A1 (en) * | 2014-11-29 | 2016-06-02 | 中山大洋电机股份有限公司 | Motor controller |
| CN106487255A (en) * | 2016-11-04 | 2017-03-08 | 中车株洲电力机车研究所有限公司 | Current transformer |
| CN110311537A (en) * | 2018-03-21 | 2019-10-08 | 中车株洲电力机车研究所有限公司 | Power cabinet and current transformer |
| CN109194092A (en) * | 2018-08-03 | 2019-01-11 | 卧龙电气集团辽宁荣信电气传动有限公司 | A kind of modularization water cooling power cell and signal acquisition method |
| CN109194092B (en) * | 2018-08-03 | 2020-09-08 | 卧龙电气集团辽宁荣信电气传动有限公司 | Modularized water-cooling power unit and signal acquisition method |
| CN109245563A (en) * | 2018-11-15 | 2019-01-18 | 北京金自天正智能控制股份有限公司 | A kind of power cabinet for large capacity synchronous machine stationary frequency starting |
| WO2020108412A1 (en) * | 2018-11-28 | 2020-06-04 | 深圳市禾望电气股份有限公司 | Power module and electric power electronic device |
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