CN102097500A - Thin film solar cell and manufacturing method thereof - Google Patents
Thin film solar cell and manufacturing method thereof Download PDFInfo
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- CN102097500A CN102097500A CN2009102590214A CN200910259021A CN102097500A CN 102097500 A CN102097500 A CN 102097500A CN 2009102590214 A CN2009102590214 A CN 2009102590214A CN 200910259021 A CN200910259021 A CN 200910259021A CN 102097500 A CN102097500 A CN 102097500A
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a thin film solar cell and a manufacturing method thereof. The thin film solar cell comprises a substrate, a first conductive layer, a first type semiconductor layer, a hybrid semiconductor layer, a second type semiconductor layer and a second conductive layer. The first conductive layer is configured on the substrate. The first type semiconductor layer is configured on the first conductive layer. The hybrid semiconductor layer is provided with an amorphous silicon layer and a crystal silicon layer. The amorphous silicon layer is provided with a first energy gap, and the crystal silicon layer is provided with a second energy gap, wherein the first energy gap is greater than the second energy gap. The hybrid semiconductor layer is positioned between the first type semiconductor layer and the second type semiconductor layer. The second conductive layer is configured on the second type semiconductor layer. The invention also provides the manufacturing method for the thin film solar cell.
Description
Technical field
The present invention relates to solar cell and preparation method thereof, and particularly relevant for a kind of thin-film solar cells and preparation method thereof.
Background technology
Fig. 1 is the generalized section of existing a kind of thin-film solar cells.Please refer to Fig. 1, thin-film solar cells 100 comprises a pair of substrate 112,114, two transparency conducting layers 122,124, a n type semiconductor layer 130, a p type semiconductor layer 140, an amorphous silicon layer 150.Amorphous silicon layer 150 is between n type semiconductor layer 130 and p type semiconductor layer 140.N type semiconductor layer 130 and p type semiconductor layer 140 lay respectively between amorphous silicon layer 150 and the transparency conducting layer 122 and between amorphous silicon layer 130 and the transparency conducting layer 124, as shown in Figure 1.In addition, above-mentioned transparency conducting layer 122,124, n type semiconductor layer 130, p type semiconductor layer 140 and amorphous silicon layer 150 are located between the substrate 112,114.
Hold said structure, when sunlight 160 exposes to solar cell by the outside, as: near a side of p type semiconductor layer, amorphous silicon layer 150 between n type semiconductor layer 130 and p type semiconductor layer 140 is suitable for being subjected to luminous energy and to produce free electron-hole right, and electronics and hole are moved respectively toward two-layer by the internal electric field between n type semiconductor layer 130 and the p type semiconductor layer 140, and produce a kind of storage form of electric energy, if this moment is applied load circuit or electronic installation, just can provide electric energy and circuit or device are driven.
In general; in order to improve the photoelectric conversion efficiency of solar cell 100; usually can between n type semiconductor layer 130 and transparency conducting layer 122, dispose a reflecting electrode 170; thus; electrode 170 reflected back amorphous silicon layers 150 again can be reflected behind the light penetration n type semiconductor layer 130; improving the utilance of light, and can promote the photoelectric conversion efficiency of solar cell 100.
Yet, the solar cell 100 that adopts said structure only can transformation energy silicon (energy band gap) greater than 1.7 electron-volts sunlights, so its photoelectric conversion efficiency promotes limited.
Summary of the invention
The invention provides a kind of thin-film solar cells, it has better photoelectric conversion efficiency.
The present invention provides a kind of manufacture method of thin-film solar cells in addition, and it can produce above-mentioned thin-film solar cells.
The present invention proposes a kind of thin-film solar cells, and it comprises a substrate, one first conductive layer, one first type semiconductor layer, a hybrid semiconductor layer, one second type semiconductor layer and one second conductive layer.First conductive layer is disposed on the substrate.First type semiconductor layer is disposed on the conductive layer.The hybrid semiconductor layer has an amorphous silicon layer and a crystallizing silicon layer.Amorphous silicon layer has one first energy gap, and crystallizing silicon layer has one second energy gap, and wherein first energy gap is greater than second energy gap.The hybrid semiconductor layer is between first type semiconductor layer and second type semiconductor layer.Second conductive layer is disposed on second type semiconductor layer.
In one embodiment of this invention, when first type semiconductor layer is a n type semiconductor layer, and second type semiconductor layer is when being a p type semiconductor layer, and crystallizing silicon layer is between amorphous silicon layer and n type semiconductor layer, or between amorphous silicon layer and p type semiconductor layer.
In one embodiment of this invention, when first type semiconductor layer is a p type semiconductor layer, and second type semiconductor layer is when being a n type semiconductor layer, and crystallizing silicon layer is between amorphous silicon layer and n type semiconductor layer, or between amorphous silicon layer and p type semiconductor layer.
In one embodiment of this invention, first conductive layer is a transparency conducting layer, its material comprises one at least such as indium tin oxide, indium-zinc oxide, indium tin zinc oxide, zinc oxide, aluminium tin-oxide, aluminium zinc oxide, cadmium indium oxide, cadmium zinc oxide, gallium zinc oxide and tin oxyfluoride, and second conductive layer comprises reflector and transparency conducting layer one at least.
In one embodiment of this invention, second conductive layer is a transparency conducting layer, its material comprises one at least such as indium tin oxide, indium-zinc oxide, indium tin zinc oxide, zinc oxide, aluminium tin-oxide, aluminium zinc oxide, cadmium indium oxide, cadmium zinc oxide, gallium zinc oxide and tin oxyfluoride, and first conductive layer comprises reflector and transparency conducting layer one at least.
In one embodiment of this invention, first conductive layer and second conductive layer at least the surface of one be concaveconvex structure.
In one embodiment of this invention, smaller or equal to 0.3 μ m, the thickness of crystallizing silicon layer is between 1 μ m to 3 μ m greater than 0 μ m for the thickness of amorphous silicon layer.
The present invention proposes a kind of manufacture method of thin-film solar cells in addition, and it comprises the following steps at least.At first, provide a substrate.Then, form one first conductive layer on substrate.Then, form one first type semiconductor layer on first conductive layer.Then, form a hybrid semiconductor layer on first type semiconductor layer, wherein the hybrid semiconductor layer has an amorphous silicon layer and a crystallizing silicon layer.Then, form one second type semiconductor layer on the hybrid semiconductor layer.Then, form one second conductive layer on second type semiconductor layer.
In one embodiment of this invention, when first type semiconductor layer is a n type semiconductor layer, and second type semiconductor layer is when being p type semiconductor layer, and the method that forms the hybrid semiconductor layer comprises the following steps.At first, form crystallizing silicon layer on n type semiconductor layer.Then, form amorphous silicon layer on crystallizing silicon layer.
In one embodiment of this invention, when first type semiconductor layer is a n type semiconductor layer, and second type semiconductor layer is when being p type semiconductor layer, and the method that forms the hybrid semiconductor layer comprises the following steps.At first, form amorphous silicon layer on n type semiconductor layer, then, form crystallizing silicon layer on amorphous silicon layer.
In one embodiment of this invention, when first type semiconductor layer is a p type semiconductor layer, and second type semiconductor layer is when being n type semiconductor layer, and the method that forms the hybrid semiconductor layer comprises the following steps.At first, form amorphous silicon layer on p type semiconductor layer.Then, form crystallizing silicon layer on amorphous silicon layer.
In one embodiment of this invention, when first type semiconductor layer is a p type semiconductor layer, and second type semiconductor layer is when being n type semiconductor layer, and the method that forms the hybrid semiconductor layer comprises the following steps.At first, form crystallizing silicon layer on p type semiconductor layer.Then, form amorphous silicon layer on crystallizing silicon layer.
In one embodiment of this invention, formed crystallizing silicon layer before amorphous silicon layer, more be included on the surface of amorphous silicon layer and carry out first-class gas ions processing procedure.
In one embodiment of this invention, the film layer structure of formation crystallizing silicon layer is a column structure.
In one embodiment of this invention, the method that forms first conductive layer comprises that more one is on substrate at least for formation one transparency conducting layer and a reflector, and wherein second conductive layer is a transparency conducting layer.
In one embodiment of this invention, the method that forms second conductive layer comprises that more one is on second type semiconductor layer at least for formation one transparency conducting layer and a reflector, and wherein first conductive layer is a transparency conducting layer.
In one embodiment of this invention, the material of above-mentioned crystallizing silicon layer is polysilicon or monocrystalline silicon.
In one embodiment of this invention, during the material polysilicon of above-mentioned crystallizing silicon layer, crystallizing silicon layer is a column structure.
In one embodiment of this invention, smaller or equal to 0.3 μ m, and the thickness of above-mentioned crystallizing silicon layer is approximately between 1 μ m to 3 μ m greater than 0 μ m for the thickness of above-mentioned amorphous silicon layer.
Thin-film solar cells of the present invention uses amorphous silicon layer and the formed hybrid semiconductor layer of crystallizing silicon layer as photoelectric conversion layer, and wherein amorphous silicon layer has different energy gaps respectively with crystallizing silicon layer.Therefore, when solar irradiation was incident upon thin-film solar cells, it can have preferable photoelectric conversion efficiency.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended graphic being described in detail below.
Description of drawings
Fig. 1 is the generalized section of existing a kind of thin-film solar cells;
Fig. 2 is the generalized section of the thin-film solar cells of first embodiment of the invention;
Fig. 3 A to Fig. 3 F is the making flow chart of the thin-film solar cells of first embodiment of the invention;
Fig. 4 is the generalized section of the thin-film solar cells of second embodiment of the invention;
Fig. 5 is the generalized section of the thin-film solar cells of third embodiment of the invention;
Fig. 6 A to Fig. 6 B is that the part of the thin-film solar cells of third embodiment of the invention is made flow chart.
[main element symbol description]
100,200,300,400: thin-film solar cells
112,114,210: substrate
122,124: transparency conducting layer
The 130:N type semiconductor layer
The 140:P type semiconductor layer
150: amorphous silicon layer
160: sunlight
170: reflecting electrode
202,204: light
220: the first conductive layers
230,230a: first type semiconductor layer
240: the hybrid semiconductor layer
242: amorphous silicon layer
242a: surface
244: crystallizing silicon layer
243: the silicon crystal grain nucleation
250,250a: second type semiconductor layer
260: the second conductive layers
Embodiment
First embodiment
Fig. 2 is the generalized section of the thin-film solar cells of first embodiment of the invention.Please refer to Fig. 2, the thin-film solar cells 200 of present embodiment comprises a substrate 210, one first conductive layer 220, one first type semiconductor layer 230, a hybrid semiconductor layer 240, one second type semiconductor layer 250 and one second conductive layer 260.First conductive layer 220 is disposed on the substrate 210.In the present embodiment, substrate 210 for example is a transparency carrier, as: glass substrate.And first conductive layer 220 can be a transparency conducting layer, wherein the material of transparency conducting layer for example be indium tin oxide, indium-zinc oxide, indium tin zinc oxide, zinc oxide, aluminium tin-oxide, aluminium zinc oxide, cadmium indium oxide, cadmium zinc oxide, gallium zinc oxide, tin oxyfluoride and general existing oxidic, transparent, conductive layers etc. at least one of them.In the embodiment that another does not illustrate, first conductive layer 220 also can be the lamination of reflector (not illustrating) and above-mentioned transparency conducting layer, wherein the reflector is between transparency conducting layer and substrate, and the material in reflector for example is to use the preferable metal of silver or aluminium and so on reflectivity.
First type semiconductor layer 230 is disposed on first conductive layer 220.In the present embodiment, first type semiconductor layer 230 for example is a n type semiconductor layer, and its material for example is to be base material with silicon.In the present embodiment, the thickness of first type semiconductor layer 230 for example is 20nm.
Please continue with reference to figure 2, hybrid semiconductor layer 240 is between first type semiconductor layer 230 and second type semiconductor layer 250, and wherein hybrid semiconductor layer 240 has an amorphous silicon layer 242 and a crystallizing silicon layer 244.Amorphous silicon layer 242 has one first energy gap Eg1, and crystallizing silicon layer 244 has one second energy gap Eg2, and wherein the first energy gap Eg1 is greater than the second energy gap Eg2.In the present embodiment, the material of crystallizing silicon layer 244 for example is polysilicon or monocrystalline silicon, and the structure of crystallizing silicon layer 244 is according to the mode that forms, and it can be a column structure, as shown in Figure 2.In addition, the thickness of amorphous silicon layer 242 in fact greater than 0 μ m smaller or equal to 0.3 μ m, and the thickness of crystallizing silicon layer 244 is approximately between 1 μ m to 3 μ m.
In the present embodiment, first type semiconductor layer 230 is a n type semiconductor layer, and second type semiconductor layer 250 is a p type semiconductor layer, and crystallizing silicon layer 244 is between amorphous silicon layer 242 and n type semiconductor layer, wherein the material of second type semiconductor layer 250 is a base material with silicon in this way, and its thickness for example is 15nm.
In addition, second conductive layer 260 is disposed on second type semiconductor layer 250, and as shown in Figure 2, wherein second conductive layer 260 for example is the material that adopts above-mentioned transparency conducting layer, does not repeat them here.So, when from the light 202 in the outside when being incident to the inside of thin-film solar cells 200 near one of second conductive layer 260 side, light 202 can be in order by p type semiconductor layer, amorphous silicon layer 242, crystallizing silicon layer 244, n type semiconductor layer and first conductive layer 220.Because the first energy gap Eg1 of amorphous silicon layer 242 is greater than the second energy gap Eg2 of crystallizing silicon layer 244, therefore, light 202 short wavelengths' part can be absorbed and produce electron hole pair earlier by amorphous silicon layer 242, light 202 long wavelengths' part then can be absorbed by crystallizing silicon layer 244 and produce electron hole pair.In other words, by amorphous silicon layer 242 and crystallizing silicon layer 244 pile up the hybrid semiconductor layer 240 that forms, the wave-length coverage that can absorb light 202 is wider, thereby can preferably promote the photoelectric conversion efficiency of thin-film solar cells 200.
In addition, when if first conductive layer 220 adopts the laminated construction of above-mentioned reflector and transparency conducting layer, the light 202 that part is not absorbed by amorphous silicon layer 242 and crystallizing silicon layer 244 can be by 220 reflections of first conductive layer, and transmission back-mixing type semiconductor layer 240, and then absorbed again by amorphous silicon layer 242 and crystallizing silicon layer 244, so can improve the utilance of light 202, and then can promote the photoelectric conversion efficiency of thin-film solar cells 200, and this kind design then is a kind of thin-film solar cells 200 of single face irradiation.
In another embodiment, first conductive layer 220 can be only to adopt transparency conducting layer and unreflected design, wherein second conductive layer 260 still only is a transparency conducting layer, so light 202,204 can be incident to its inside by the both sides of thin-film solar cells 200, and mixed formula semiconductor layer 240 absorbs and produce electron hole pair, but and then forms the thin-film solar cells 200 that a kind of two sides is subjected to light.In other words, one of them adopts the lamination in transparency conducting layers and reflector first conductive layer 220 and second conductive layer 260, and another then can form a kind of thin-film solar cells 200 of above-mentioned single face irradiation when being transparency conducting layer.And when first conductive layer 220 and second conductive layer 260 are all the structure of transparency conducting layer, then can form a kind of thin-film solar cells 200 of double face lighting, wherein the design of the rete of first conductive layer 220 and second conductive layer 260 is decided by user's demand, and is above-mentioned only for illustrating.
Hold as can be known above-mentioned, thin-film solar cells 200 is used first type semiconductor layer 230, hybrid semiconductor layer 240 and second type semiconductor layer 250 solar cell as a kind of PIN structure, wherein, hybrid semiconductor layer 240 uses the light absorbing zone of the lamination of amorphous silicon layer 242 and crystallizing silicon layer 244 as thin-film solar cells 200, and amorphous silicon layer 242 has different energy gaps with crystallizing silicon layer 244, so can absorb the light of different-waveband, and then can promote the photoelectric conversion efficiency of thin-film solar cells 200.
In addition, the present invention also provides a kind of method of producing above-mentioned thin-film solar cells 200, and details are as follows for it.
Fig. 3 A to Fig. 3 F is the making flow chart of the thin-film solar cells of first embodiment of the invention.Please refer to Fig. 3 A, at first, provide an aforesaid substrate 210, wherein the material about substrate 210 can not repeat them here with reference to above-mentioned.Then, form above-mentioned first conductive layer 220 on substrate 210, wherein first conductive layer 220 can be the above-mentioned mentioned transparency conducting layer that only is, or the lamination in transparency conducting layer and reflector, and the form of first conductive layer 220 needs to be designed to single face according to thin-film solar cells 200 and decided by light or the two-sided light that is subjected to, and related description can be with reference to above-mentioned.In addition, the method that forms first conductive layer 220 for example be to use metal organic chemical vapor deposition (metal organicchemical vapor deposition,
MOCVD) method, sputtering method (sputtering) or vapour deposition method (evaporation).
Then, form above-mentioned first type semiconductor layer 230 on first conductive layer 220, shown in Fig. 3 B.In the present embodiment, the method that forms first type semiconductor layer 230 for example be adopt traditional plasma chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition,
PECVD), wherein this first type semiconductor layer 230 for example is a n type semiconductor layer, and its deposit thickness is decided by user's demand, present embodiment with 20nm for illustrating.
Then, form above-mentioned hybrid semiconductor layer 240 on first type semiconductor layer 230, wherein hybrid semiconductor layer 240 has amorphous silicon layer 242 and crystallizing silicon layer 244.Specifically, please be earlier with reference to Fig. 3 C, in the present embodiment, form crystallizing silicon layer 244 earlier on first type semiconductor layer 230, then, form amorphous silicon layer 242 again on crystallizing silicon layer 244, so can form the structure of above-mentioned hybrid semiconductor layer 240, shown in Fig. 3 D.The method that wherein forms crystallizing silicon layer 244 and amorphous silicon layer 242 in regular turn for example is to adopt traditional plasma chemical vapor deposition.In the present embodiment, the thickness of deposited amorphous silicon layer be greater than 0 μ m smaller or equal to 0.3 μ m, and the thickness of depositing crystalline silicon layer is approximately between 1 μ m to 3 μ m.Wherein, need to prove that when depositing crystalline silicon layer 244, its post-depositional structure is the column crystallization silicon structure.
Then, form above-mentioned second type semiconductor layer 250 on hybrid semiconductor layer 240, shown in Fig. 3 E.In the present embodiment, the method that forms second type semiconductor layer 250 for example is the using plasma chemical vapour deposition technique, wherein this second type semiconductor layer 250 is a p type semiconductor layer, and its deposit thickness is decided by user's demand, present embodiment with 15nm for illustrating.So far, promptly form a kind of thin-film solar cells of PIN form.
Then, form above-mentioned second conductive layer 260 on second type semiconductor layer, shown in Fig. 3 F.In the present embodiment, the method that forms second conductive layer 260 for example is to use Metalorganic Chemical Vapor Deposition, sputtering method or vapour deposition method.Similarly, second conductive layer 260 can be the above-mentioned mentioned transparency conducting layer that only is, or the lamination in transparency conducting layer and reflector, and the form of second conductive layer 260 needs to be designed to single face according to thin-film solar cells 200 and decided by light or the two-sided light that is subjected to, related description can it is noted that with reference to above-mentioned, when first conductive layer 220 includes the reflector, this moment, second conductive layer 260 must be transparency conducting layer, and vice versa.
Hold above-mentionedly, roughly finish a kind of making step of thin-film solar cells 200, wherein when first conductive layer 220 and second conductive layer 260 were all transparency conducting layer, 200 of thin-film solar cells were to adopt the two-sided design that is subjected to light.And one of them be the lamination in transparency conducting layer and reflector when first conductive layer 220 or second conductive layer 260, and another is when being transparency conducting layer, and 200 of thin-film solar cells are the designs that the employing single face is subjected to light, and detailed description can be with reference to above-mentioned.
Second embodiment
Fig. 4 is the generalized section of the thin-film solar cells of second embodiment of the invention.Please simultaneously relatively with reference to figure 2 and Fig. 4, thin-film solar cells 300 and thin-film solar cells 200 structural similarities, the two difference be in, the first type semiconductor layer 230a is a p type semiconductor layer, and the second type semiconductor layer 250a is a n type semiconductor layer.
In the present embodiment, thin-film solar cells 300 and thin-film solar cells 200 only are that the film material with the first type semiconductor layer 260a and second type semiconductor layer is replaced into p type semiconductor layer and n type semiconductor layer respectively, and all the other film layer structures are same as above-mentioned thin-film solar cells 200.So, equally can be by amorphous silicon layer 242 and the hybrid semiconductor layer 240 that forms that crystallizing silicon layer 244 piles up, but and the light 202,204 of absorbing wavelength scope wider 2 and then can preferably promote the photoelectric conversion efficiency of thin-film solar cells 300.In other words, thin-film solar panels 300 similarly has the advantage that thin-film solar cells 200 is described, and just repeats no more at this.
What deserves to be mentioned is, first conductive layer 220 and second conductive layer 260 can be looked closely the user and desire design of thin film solar cell 300 and be subjected to light to adopt the lamination in transparency conducting layer or transparency conducting layer and reflector for two-sided light or the single face of being subjected to, this part can not repeat them here with reference to the explanation of first embodiment.
In addition, the mode that forms thin-film solar cells 300 is similar with the mode that forms thin-film solar cells 200, only the two difference be in, when forming the step of the first type semiconductor layer 230a and the second type semiconductor layer 250a respectively, its employed material is respectively p type semiconductor layer and n type semiconductor layer.In other words, the mode that forms thin-film solar cells 300 can be finished the process step of Fig. 3 A to Fig. 3 F in order, and wherein relevant technology is described and step, please refer to above-mentioned.Only it is noted that, when forming the step of the first type semiconductor layer 230a and the second type semiconductor layer 250a respectively, the two film material such as above-mentioned.So, can form the thin-film solar cells 300 that illustrates as Fig. 4.
The 3rd embodiment
Fig. 5 is the generalized section of the thin-film solar cells of third embodiment of the invention.Please simultaneously relatively with reference to figure 2 and Fig. 5, thin-film solar cells 400 and thin-film solar cells 200,300 structural similarities, the two difference be in, in thin-film solar cells 400, amorphous silicon layer 242 is to be positioned on first type semiconductor layer 230, the 230a, and crystallizing silicon layer 244 is between amorphous silicon layer 242 and second type semiconductor layer 250,250a.
In the present embodiment, the difference place of thin-film solar cells 400 and thin-film solar cells 200,300 only is that hybrid semiconductor layer 240 interior crystallizing silicon layer 244 exchange with the stacked position of amorphous silicon layer 242.Meaning is the structure that thin-film solar panels 400 still has hybrid semiconductor layer 240, so thin-film solar panels 400 has thin-film solar cells 200,300 advantages of being described equally, just repeats no more at this.
In addition, the mode that forms thin-film solar cells 400 is similar with the mode that forms thin-film solar cells 200,300, only the two difference be in, form above-mentioned first type semiconductor layer 230,230a behind first conductive layer 220, then, form above-mentioned amorphous silicon layer 242 and crystallizing silicon layer 244 in regular turn on first type semiconductor layer 230,230a, shown in Fig. 6 A to Fig. 6 B.
It should be noted that forming crystallizing silicon layer 244 before amorphous silicon layer 242, also be included on the surperficial 242a of amorphous silicon layer 242 and carry out first-class gas ions processing procedure.Specifically, this plasma processing procedure for example is that the surperficial 242a to amorphous silicon layer 242 imposes the helium atom plasma forming a plurality of silicon crystal grain nucleation 243 (Si grain nucleation), or the surperficial 242a of amorphous silicon layer 242 is imposed a laser beam so that silicon recrystallizes (Si re-crystallization).Thus, when using plasma chemical vapor deposition depositing crystalline layer 244, can form preferable structure of crystalline silicon.
Then, carry out in order can forming the thin-film solar cells 400 that illustrates as Fig. 5 as behind Fig. 3 E and the described making step of 3F, wherein relevant technology is described and step, please refer to above-mentioned again.
What deserves to be mentioned is, above-mentioned crystallizing silicon layer is generally concavo-convex irregular surface (not illustrating) at the contact-making surface with first type semiconductor layer or second semiconductor layer, thus, can preferably limit to light and in thin-film solar cells, transmit, thereby can partly improve the light absorption efficiency.
In addition, the first above-mentioned conductive layer 220 and second conductive layer 260 surface of one at least can be concaveconvex structure (texture structure), so also can further promote the photoelectric conversion efficiency of thin-film solar cells 200,300,400.
In sum, thin-film solar cells of the present invention is to use amorphous silicon layer and the formed hybrid semiconductor layer of crystallizing silicon layer as photoelectric conversion layer, or be called light absorbing zone, wherein amorphous silicon layer has different energy gaps respectively with crystallizing silicon layer, and can absorb the light of different-waveband, and convert thereof into electron hole pair, so can improve the photoelectric conversion efficiency of thin-film solar cells.In addition, because the hybrid semiconductor layer is amorphous silicon layer and crystallizing silicon layer lamination, so, also can reduces the thickness of thin-film solar cells effectively, and promote its whole output efficiency, and then reduce production costs.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the invention; when doing a little change and retouching, so the present invention's protection range attached claim person of defining after looking is as the criterion.
Claims (25)
1. thin-film solar cells is characterized in that comprising:
One substrate;
One first conductive layer is disposed on this substrate;
One first type semiconductor layer is disposed on this conductive layer;
One hybrid semiconductor layer has an amorphous silicon layer and a crystallizing silicon layer, and this amorphous silicon layer has one first energy gap, and this crystallizing silicon layer has one second energy gap, and wherein this first energy gap is greater than this second energy gap;
One second type semiconductor layer, wherein this hybrid semiconductor layer is between this first type semiconductor layer and this second type semiconductor layer; And
One second conductive layer is disposed on this second type semiconductor layer.
2. thin-film solar cells as claimed in claim 1 is characterized in that, the material of this crystallizing silicon layer is polysilicon or monocrystalline silicon.
3. thin-film solar cells as claimed in claim 2 is characterized in that, when the material of this crystallizing silicon layer was polysilicon, this crystallizing silicon layer was a column structure.
4. thin-film solar cells as claimed in claim 1, it is characterized in that, when this first type semiconductor layer is a n type semiconductor layer, and this second type semiconductor layer is when being a p type semiconductor layer, this crystallizing silicon layer is between this amorphous silicon layer and this n type semiconductor layer, or between this amorphous silicon layer and this p type semiconductor layer.
5. thin-film solar cells as claimed in claim 1, it is characterized in that, when this first type semiconductor layer is a p type semiconductor layer, and this second type semiconductor layer is when being a n type semiconductor layer, this crystallizing silicon layer is between this amorphous silicon layer and this n type semiconductor layer, or between this amorphous silicon layer and this p type semiconductor layer.
6. thin-film solar cells as claimed in claim 1, it is characterized in that, this first conductive layer is a transparency conducting layer, its material comprises one at least such as indium tin oxide, indium-zinc oxide, indium tin zinc oxide, zinc oxide, aluminium tin-oxide, aluminium zinc oxide, cadmium indium oxide, cadmium zinc oxide, gallium zinc oxide and tin oxyfluoride, and this second conductive layer comprises reflector and transparency conducting layer one at least.
7. thin-film solar cells as claimed in claim 1, it is characterized in that, this second conductive layer is a transparency conducting layer, its material comprises one at least such as indium tin oxide, indium-zinc oxide, indium tin zinc oxide, zinc oxide, aluminium tin-oxide, aluminium zinc oxide, cadmium indium oxide, cadmium zinc oxide, gallium zinc oxide and tin oxyfluoride, and this first conductive layer comprises reflector and transparency conducting layer one at least.
8. thin-film solar cells as claimed in claim 1 is characterized in that, this first conductive layer and this second conductive layer surface of one at least are concaveconvex structure.
9. thin-film solar cells as claimed in claim 1 is characterized in that, smaller or equal to 0.3 μ m, the thickness of this crystallizing silicon layer is approximately between 1 μ m to 3 μ m greater than 0 μ m for the thickness of this amorphous silicon layer.
10. the manufacture method of a thin-film solar cells comprises:
One substrate is provided;
Form one first conductive layer on this substrate;
Form one first type semiconductor layer on this first conductive layer;
Form a hybrid semiconductor layer on this first type semiconductor layer, wherein this hybrid semiconductor layer has an amorphous silicon layer and a crystallizing silicon layer;
Form one second type semiconductor layer on this hybrid semiconductor layer; And
Form one second conductive layer on this second type semiconductor layer.
11. the manufacture method of thin-film solar cells as claimed in claim 10 is characterized in that, when this first type semiconductor layer is a n type semiconductor layer, and this second type semiconductor layer is when being p type semiconductor layer, and the method that forms this hybrid semiconductor layer comprises:
Form this crystallizing silicon layer on this n type semiconductor layer; And
Form this amorphous silicon layer on this crystallizing silicon layer.
12. the manufacture method of thin-film solar cells as claimed in claim 11 is characterized in that, the film layer structure that forms this crystallizing silicon layer is a column structure.
13. the manufacture method of thin-film solar cells as claimed in claim 10 is characterized in that, when this first type semiconductor layer is a n type semiconductor layer, and this second type semiconductor layer is when being p type semiconductor layer, and the method that forms this hybrid semiconductor layer comprises:
Form this amorphous silicon layer on this n type semiconductor layer; And
Form this crystallizing silicon layer on this amorphous silicon layer.
14. the manufacture method of thin-film solar cells as claimed in claim 13 is characterized in that, the film layer structure that forms this crystallizing silicon layer is a column structure.
15. the manufacture method of thin-film solar cells as claimed in claim 13 is characterized in that, forms this crystallizing silicon layer before this amorphous silicon layer, more is included on the surface of this amorphous silicon layer to carry out first-class gas ions processing procedure.
16. the manufacture method of thin-film solar cells as claimed in claim 10 is characterized in that, when this first type semiconductor layer is a p type semiconductor layer, and this second type semiconductor layer is when being n type semiconductor layer, and the method that forms this hybrid semiconductor layer comprises:
Form this amorphous silicon layer on this p type semiconductor layer; And
Form this crystallizing silicon layer on this amorphous silicon layer.
17. the manufacture method of thin-film solar cells as claimed in claim 16 is characterized in that, the film layer structure that forms this crystallizing silicon layer is a column structure.
18. the manufacture method of thin-film solar cells as claimed in claim 16 is characterized in that, forms this crystallizing silicon layer before this amorphous silicon layer, also is included on the surface of this amorphous silicon layer to carry out first-class gas ions processing procedure.
19. the manufacture method of thin-film solar cells as claimed in claim 10 is characterized in that, when this first type semiconductor layer is a p type semiconductor layer, and this second type semiconductor layer is when being n type semiconductor layer, and the method that forms this hybrid semiconductor layer comprises:
Form this crystallizing silicon layer on this p type semiconductor layer; And
Form this amorphous silicon layer on this crystallizing silicon layer.
20. the manufacture method of thin-film solar cells as claimed in claim 19 is characterized in that, the film layer structure that forms this crystallizing silicon layer is a column structure.
21. the manufacture method of thin-film solar cells as claimed in claim 10 is characterized in that, the material of this crystallizing silicon layer is polysilicon or monocrystalline silicon.
22. the manufacture method of thin-film solar cells as claimed in claim 21 is characterized in that, when the material of this crystallizing silicon layer was polysilicon, this crystallizing silicon layer was a column structure.
23. the manufacture method of thin-film solar cells as claimed in claim 10 is characterized in that, smaller or equal to 0.3 μ m, the thickness of this crystallizing silicon layer is between 1 μ m to 3 μ m greater than 0 μ m for the thickness of this amorphous silicon layer.
24. the manufacture method of thin-film solar cells as claimed in claim 10, it is characterized in that, the method that forms this first conductive layer comprises that more one is on this substrate at least for formation one transparency conducting layer and a reflector, and wherein this second conductive layer is a transparency conducting layer.
25. the manufacture method of thin-film solar cells as claimed in claim 10, it is characterized in that, the method that forms this second conductive layer comprises that also one is on this second type semiconductor layer at least for formation one transparency conducting layer and a reflector, and wherein this first conductive layer is a transparency conducting layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103022060A (en) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Technology for manufacturing triple-base-material type silicon thin film solar battery by combining silane and silicon helide |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022060A (en) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | Technology for manufacturing triple-base-material type silicon thin film solar battery by combining silane and silicon helide |
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