CN102097206A - Low temperature growth method for wurtzite zinc sulfide base diluted magnetic semiconductor nanorod - Google Patents
Low temperature growth method for wurtzite zinc sulfide base diluted magnetic semiconductor nanorod Download PDFInfo
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Abstract
The invention relates to a preparation method of a nano material, in particular to a low temperature growth method for a wurtzite zinc sulfide (ZnS) base diluted magnetic semiconductor nanorod. By the method, the preparation of the wurtzite ZnS base diluted magnetic semiconductor nanorod can be realized by adopting a hydrothermal process, taking water and ethylene diamine as solvents, and zinc nitrate, element-doped nitrate and thiocarbamide as raw materials, and doping the doped elements into crystal lattices of the zinc nitrate according to a certain proportion. The invention is characterized in that: the hydrothermal process is adopted; and the low temperature growth method has the advantages of easily realizing large-scale production, along with simple operation, low temperature growth and low consumption; moreover, the preparation of the wurtzite zinc sulfide (ZnS) base diluted magnetic semiconductor nanorod is successfully realized by bringing magnetic ions in. The low temperature growth method for the wurtzite zinc sulfide (ZnS) base diluted magnetic semiconductor nanorod provides an effective backup method for low temperature synthesis of other high temperature stable phase nano materials.
Description
Technical field
The present invention relates to a kind of preparation of nanomaterials, the low-temperature growth method of a kind of specifically buergerite zinc sulphide (ZnS) base diluted magnetic semiconductor nano rods.
Background technology
Dilute magnetic semiconductor is owing to introduce traditional semiconductor with the magnetic degree of freedom, the electric charge attribute that has electronics simultaneously shows excellent magnetic with the spin attribute, magneto-optic, magnetic electricity performance, show huge application potential in a lot of fields, be the important materials of making electronic devices such as high-density nonvolatile memory, magnetic inductor, semiconductor integrated circuit, semiconductor laser and spin quantum computer, have broad application prospects.In the last few years, one-dimensional nano structure material, as nanotube, nano wire, nanometer rods, nano belt etc., because of its in the importance of basic physics research and at nanoelectronic, the potential application of aspects such as nanometer mechanics has constantly excited people's research interest.Therefore, the dilute magnetic semiconductor of preparation one-dimensional nano structure is significant.
ZnS is a kind of very important wide band gap semiconducter photoelectric material, has two kinds of allotropes of zincblende and buergerite, in ultraviolet light-emitting diode, and flat-panel monitor, infrared window, transducer, fields such as laser have important use and are worth.Zincblende is the ambient stable phase, and buergerite is the high-temperature stable phase, and zincblende lattce structure can transform to wurtzite structure under 1020 ℃ high-temperature condition.Buergerite zinc sulphide is compared with zincblende zinc sulphide has more excellent optical property, but generally will adopt the method for chemical vapour deposition (CVD) to obtain.This method requires the experiment condition harshness, just can prepare material under the condition of high temperature, is difficult to obtain undersized nanometer rods usually, and repeatability is bad.Therefore, the method for searching low temperature compounding wurtzite zinc sulfide nano rod becomes research focus in recent years.It is low that the method for hydro-thermal has reaction temperature, the reactant cheapness, and avirulence, repeatability is fine, and easily realizes the characteristics of mixing and enjoy people's attention.At present, also nobody adopts this method compounding wurtzite zinc sulfide-based diluted magnetic semiconductor nano rods under the condition of low temperature.Therefore, we expect to utilize this method, by introducing magnetic ion, realize the purpose of buergerite zinc sulfide-based diluted magnetic semiconductor nano rods low-temperature epitaxy.
Summary of the invention
The objective of the invention is to adopt Hydrothermal Preparation buergerite zinc sulfide-based diluted magnetic semiconductor nano rods, by regulating the size of temperature control nanometer rods; By introducing Fe, Mn, the Cu dopant ion is finished the preparation of dilute magnetic semiconductor.
Technical solution of the present invention is: this method adopts hydro thermal method, is solvent with water and ethylenediamine, and nitrate and thiocarbamide are raw material, utilizes the preparation of the template action realization buergerite zinc sulfide-based diluted magnetic semiconductor nano rods of ethylenediamine;
Concrete step of preparation process is as follows:
(1), takes by weighing an amount of zinc nitrate, nitrate and thiocarbamide.
(2), with zinc nitrate and nitrate is water-soluble and the mixed solution of ethylenediamine in, wherein the configuration proportion of water and ethylenediamine is 1: 1 in the mixed solution, normal temperature magnetic agitation 1 hour.
(3), thiocarbamide is joined in the solution (2) normal temperature magnetic agitation 2 hours.
(4), the mixed solution in (3) step was put into 180 ℃ of sintering of reactor 12 hours.
(5), take out product, it is ultrasonic, centrifugal to utilize deionized water that it is carried out, 2 times repeatedly; It is ultrasonic, centrifugal to utilize ethanol that it is carried out, 2 times repeatedly; 80 ℃ of following air dryings 3 hours promptly obtain powdered rubber.
Described nitrate be meant manganese nitrate, ferric nitrate, copper nitrate any one or multiple.
Described an amount of zinc nitrate, nitrate and thiocarbamide be meant zinc nitrate and nitrate amount and with the molar ratio of thiocarbamide amount be 1: 3.The amount of nitrate is not arbitrarily, utilize nitrate and zinc nitrate and nitrate and molar ratio represent the doping ratio of nitrate, the scope of doping ratio is different along with the difference of dopant ion, sees Table 1
Table 1: the doping ratio of institute's doped magnetic element in the buergerite zinc sulfide-based diluted magnetic semiconductor nano rods
Illustrate:
ZnS:Mn in any one element doping
2+Middle doped with Mn
2+Ratio be: manganese nitrate and zinc nitrate and manganese nitrate and mol ratio between 0 to 5%.
ZnS:Fe in any one element doping
2+Middle doped F e
2+Ratio be: ferric nitrate and zinc nitrate and ferric nitrate and mol ratio between 0 to 3%.
ZnS:Cu in any one element doping
2+Middle doped with Cu
2+Ratio be: copper nitrate and zinc nitrate and copper nitrate and mol ratio between 0 to 1%.
ZnS:Mn2+Fe in two kinds of element dopings
2+Middle doped with Mn
2+Ratio be: manganese nitrate and zinc nitrate and manganese nitrate and ferric nitrate and mol ratio between 0 to 1%; Doped F e
2+Ratio be: ferric nitrate and zinc nitrate and manganese nitrate and ferric nitrate and mol ratio between 0 to 3%.
ZnS:Mn in two kinds of element dopings
2+Cu
2+Middle doped with Mn
2+Ratio be: manganese nitrate and zinc nitrate and manganese nitrate and copper nitrate and mol ratio between 0 to 1%; Doped with Cu
2+Ratio be: copper nitrate and zinc nitrate and manganese nitrate and copper nitrate and mol ratio between 0 to 1%.
The ZnS:Mn of three kinds of element dopings
2+Fe
2+Cu
2+Middle doped with Mn
2+Ratio be: manganese nitrate and zinc nitrate and manganese nitrate and ferric nitrate and copper nitrate and mol ratio between 0 to 1%; Doped F e
2+Ratio be: ferric nitrate and zinc nitrate and manganese nitrate and ferric nitrate and copper nitrate and mol ratio between 0 to 1%; Doped with Cu
2+Ratio be: copper nitrate and zinc nitrate and manganese nitrate and ferric nitrate and copper nitrate and mol ratio between 0 to 1%.
Technical characterstic of the present invention: hydro thermal method not only has simple to operate, low-temperature epitaxy, and low cost is easy to realize advantages such as large-scale production.And, successfully realized the preparation of buergerite zinc sulfide-based diluted magnetic semiconductor nano rods by introducing magnetic ion.The present invention provides effective back Preparation Method for the low temperature of other high-temperature stable phase nano materials is synthetic.
Description of drawings
Fig. 1 is the ZnS:Mn that reaction generated in 4 hours
2+(1%) transmission electron microscope image of nanometer rods.
Fig. 2 is the ZnS:Mn that reaction generated in 12 hours
2+(1%) transmission electron microscope image of nanometer rods.
Fig. 3 is the ZnS:Mn that reaction generated in 12 hours
2+(1%) Fe
2+(1%) transmission electron microscope image of nanometer rods.
Fig. 4 is the ZnS:Mn that reaction generated in 12 hours
2+(1%) Fe
2+(1%) Cu
2+(1%) the field emission-scanning electron microscopy picture of nanometer rods.
Fig. 5 is the ZnS that reaction generated in 12 hours; ZnS:Mn
2+(1%); ZnS:Mn
2+(1%) Fe
2+(1%); ZnS:Mn
2+(1%) Fe
2+(1%) Cu
2+(1%) X-ray diffraction image.
Five, embodiment
The present invention adopts hydro thermal method, is solvent with water and ethylenediamine, and nitrate and thiocarbamide are raw material, and above-mentioned raw materials was put into 180 ℃ of sintering of reactor 12 hours, has realized the preparation of buergerite zinc sulfide-based diluted magnetic semiconductor nano rods.
Course of reaction is as follows:
(NH
2)
2CS+2OH
-→S
2-+2NH
3+CO
2 (1)
ZnXS(en)
0.5→ZnXS↓+0.5en (2)
The magnetic ion that X representative in the equation (2) is mixed.React the ZnS:Mn that generated in 4 hours
2+(1%) the transmission electron microscope image (see figure 1) of nanometer rods shows, in the process of reaction, nanometer rods exists with the form of template, and along with the prolongation in reaction time, the defective fracture between the template comes off nanometer rods, has formed ZnS:Mn
2+(1%) nanometer rods (see figure 2).React the ZnS:Mn that generated in 12 hours
2+(1%); ZnS:Mn
2+(1%) Fe
2+(1%); ZnS:Mn
2+(1%) Fe
2+(1%) Cu
2+(1%) the X-ray diffractogram (see figure 5) of nanometer rods shows that product is wurtzite structure, introduce dopant ion and do not bring any impurity phase, and be diluted magnetic semiconductor nano rods the preparing of matrix therefore by success with zinc sulphide.
Embodiment 1
(1), takes by weighing Zn (NO
3)
26H
2O 0.5 * 99%mmol, Mn (NO
3)
20.5 * 1%mmol, CH
4N
2S1.5mmol.
(2), with Zn (NO
3)
26H
2O and Mn (NO
3)
2In the mixed solution of water-soluble and ethylenediamine (water is 8ml, and ethylenediamine is 8ml), normal temperature magnetic agitation 1 hour.
(3), with CH
4N
2S joins in the solution (2), normal temperature magnetic agitation 2 hours.
(4), the mixed solution in (3) step was put into 180 ℃ of sintering of reactor (20ml) 12 hours.
(5), take out product, it is ultrasonic, centrifugal to utilize deionized water that it is carried out, 2 times repeatedly; It is ultrasonic, centrifugal to utilize ethanol that it is carried out, 2 times repeatedly; 80 ℃ of following air dryings 3 hours promptly obtain zinc sulphide and mix violent white powder material.The transmission electron microscope image of this white powder material is seen Fig. 2, and the X-ray diffraction image is seen Fig. 5.
(1), takes by weighing Zn (NO
3)
26H
2O 0.5 * 98%mmol, Mn (NO
3)
20.5 * 1%mmol, Fe (NO
3)
39H
2O 0.5 * 1%mmol, CH
4N
2S 1.5mmol.
(2), with Zn (NO
3)
26H
2O, Mn (NO
3)
2And Fe (NO
3)
39H
2In the mixed solution of the water-soluble and ethylenediamine of O (water is 8ml, and ethylenediamine is 8ml), normal temperature magnetic agitation 1 hour.
Other steps are with embodiment 1, and the zinc sulphide that obtains is mixed suddenly, the transmission electron microscope image of the brown ceramic powder material of iron is seen Fig. 3, and the X-ray diffraction image is seen Fig. 5.
Embodiment 3
(1), takes by weighing Zn (NO
3)
26H
2O 0.5 * 97%mmol, Mn (NO
3)
20.5 * 1%mmol, Fe (NO
3)
39H
2O 0.5 * 1%mmol, Cu (NO
3)
23H
2O 0.5 * 1%mmol, CH
4N
2S 1.5mmol.
(2), with Zn (NO
3)
26H
2O, Mn (NO
3)
2, Fe (NO
3)
39H
2O and Cu (NO
3)
23H
2In the mixed solution of the water-soluble and ethylenediamine of O (water is 8ml, and ethylenediamine is 8ml), normal temperature magnetic agitation 1 hour.
Other steps are with embodiment 1, and the zinc sulphide that obtains is mixed suddenly, the field emission-scanning electron microscopy of the powdered rubber of copper, iron looks like to see Fig. 4, and the X-ray diffraction image is seen Fig. 5.
Supplementary notes: embodiment 1 is equally applicable to ZnS:Fe
2+, ZnS:Cu
2+
Claims (4)
1. the low-temperature growth method of a buergerite zinc sulfide-based diluted magnetic semiconductor nano rods, it is characterized in that: this method is to adopt hydro thermal method, with water and ethylenediamine is solvent, the nitrate of zinc nitrate and doped chemical and thiocarbamide are raw material, doped chemical is doped to according to a certain percentage in the lattice of zinc sulphide, has realized the preparation of buergerite zinc sulfide-based diluted magnetic semiconductor nano rods;
Concrete step of preparation process is as follows:
(1), takes by weighing an amount of zinc nitrate, nitrate and thiocarbamide;
(2), with zinc nitrate and nitrate is water-soluble and the mixed solution of ethylenediamine in, wherein the configuration proportion of water and ethylenediamine is 1: 1 in the mixed solution, normal temperature magnetic agitation 1 hour;
(3), thiocarbamide is joined in the solution (2) normal temperature magnetic agitation 2 hours;
(4), the mixed solution in (3) step was put into 180 ℃ of sintering of reactor 12 hours;
(5), take out product, it is ultrasonic, centrifugal to utilize deionized water that it is carried out, 2 times repeatedly; It is ultrasonic, centrifugal to utilize ethanol that it is carried out, 2 times repeatedly; 80 ℃ of air dryings 3 hours promptly obtain powdered rubber.
2. the low-temperature growth method of a kind of buergerite zinc sulfide-based diluted magnetic semiconductor nano rods according to claim 1 is characterized in that: described nitrate be meant manganese nitrate, ferric nitrate, copper nitrate any one or multiple.
3. the low-temperature growth method of a kind of buergerite zinc sulfide-based diluted magnetic semiconductor nano rods according to claim 1 is characterized in that: described an amount of zinc nitrate, nitrate and thiocarbamide is meant: zinc nitrate and nitrate amount and with the molar ratio of thiocarbamide amount be 1: 3.
4. the low-temperature growth method of a kind of buergerite zinc sulfide-based diluted magnetic semiconductor nano rods according to claim 1 is characterized in that: the ratio in the described lattice that doped chemical is doped to according to a certain percentage zinc sulphide is meant:
ZnS:Mn in any one element doping
2+Middle doped with Mn
2+Ratio be: manganese nitrate and zinc nitrate and manganese nitrate and mol ratio between 0 to 5%;
ZnS:Fe in any one element doping
2+Middle doped F e
2+Ratio be: ferric nitrate and zinc nitrate and ferric nitrate and mol ratio between 0 to 3%;
ZnS:Cu in any one element doping
2+Middle doped with Cu
2+Ratio be: copper nitrate and zinc nitrate and copper nitrate and mol ratio between 0 to 1%;
ZnS:Mn in two kinds of element dopings
2+Fe
2+Middle doped with Mn
2+Ratio be: manganese nitrate and zinc nitrate and manganese nitrate and ferric nitrate and mol ratio between 0 to 1%; Doped F e
2+Ratio be: ferric nitrate and zinc nitrate and manganese nitrate and ferric nitrate and mol ratio between 0 to 3%;
ZnS:Mn in two kinds of element dopings
2+Cu
2+Middle doped with Mn
2+Ratio be: manganese nitrate and zinc nitrate and manganese nitrate and copper nitrate and mol ratio between 0 to 1%; Doped with Cu
2+Ratio be: copper nitrate and zinc nitrate and manganese nitrate and copper nitrate and mol ratio between 0 to 1%;
The ZnS:Mn of three kinds of element dopings
2+Fe
2+Cu
2+Middle doped with Mn
2+Ratio be: manganese nitrate and zinc nitrate and manganese nitrate and ferric nitrate and copper nitrate and mol ratio between 0 to 1%; Doped F e
2+Ratio be: ferric nitrate and zinc nitrate and manganese nitrate and ferric nitrate and copper nitrate and mol ratio between 0 to 1%; Doped with Cu
2+Ratio be: copper nitrate and zinc nitrate and manganese nitrate and ferric nitrate and copper nitrate and mol ratio between 0 to 1%.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103771494A (en) * | 2014-01-26 | 2014-05-07 | 王新娟 | Liquid-phase preparation method for manganese-doped zinc sulfide microspheres |
| CN110203962A (en) * | 2019-04-24 | 2019-09-06 | 金华莱顿新能源科技有限公司 | A kind of ZnSP nano-bar material and preparation method thereof for supercapacitor |
| KR20220121690A (en) * | 2021-02-25 | 2022-09-01 | 영남대학교 산학협력단 | Thermally morphology-controlled Mn-doped ZnS nanostructure and its application to supercapacitor electrodes |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101383305A (en) * | 2007-09-07 | 2009-03-11 | 中国科学院上海微系统与信息技术研究所 | Method for multi quantum well coupling measurement by diluted magnetic semiconductor material |
-
2009
- 2009-12-09 CN CN2009102180455A patent/CN102097206A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101383305A (en) * | 2007-09-07 | 2009-03-11 | 中国科学院上海微系统与信息技术研究所 | Method for multi quantum well coupling measurement by diluted magnetic semiconductor material |
Non-Patent Citations (4)
| Title |
|---|
| JIAN CAO ET AL.: "Optimized doping concentration of manganese in zinc sulfide nanoparticles for yellow-orange light emission", 《JOURNAL OF ALLOYS AND COMPOUNDS》 * |
| SUBHAJIT BISWAS ET AL.: "Optical and Magnetic Properties of Manganese-Incorporated Zinc Sulfide Nanorods Synthesized by a Solvothermal Process", 《J. PHYS. CHEM. B》 * |
| TAEJOON KANG ET AL.: "Synthesis and Magnetic Properties of Single-Crystalline Mn/Fe-doped and Co-doped ZnS Nanowires and Nanobelts", 《J. PHYS. CHEM. C》 * |
| W. Q. YANG ET AL.: "Color tuning of photoluminescence from ZnS nanobelts synthesized with Cu and Mn doping and without intentionally doping", 《PHYSICS LETTERS A》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103771494A (en) * | 2014-01-26 | 2014-05-07 | 王新娟 | Liquid-phase preparation method for manganese-doped zinc sulfide microspheres |
| CN110203962A (en) * | 2019-04-24 | 2019-09-06 | 金华莱顿新能源科技有限公司 | A kind of ZnSP nano-bar material and preparation method thereof for supercapacitor |
| CN110203962B (en) * | 2019-04-24 | 2021-08-03 | 金华莱顿新能源科技有限公司 | ZnSP nanorod material for super capacitor and preparation method thereof |
| KR20220121690A (en) * | 2021-02-25 | 2022-09-01 | 영남대학교 산학협력단 | Thermally morphology-controlled Mn-doped ZnS nanostructure and its application to supercapacitor electrodes |
| KR102589325B1 (en) * | 2021-02-25 | 2023-10-16 | 영남대학교 산학협력단 | Thermally morphology-controlled Mn-doped ZnS nanostructure and its application to supercapacitor electrodes |
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Application publication date: 20110615 |