CN101383305A - Method for multi quantum well coupling measurement by diluted magnetic semiconductor material - Google Patents
Method for multi quantum well coupling measurement by diluted magnetic semiconductor material Download PDFInfo
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- CN101383305A CN101383305A CNA2007100457002A CN200710045700A CN101383305A CN 101383305 A CN101383305 A CN 101383305A CN A2007100457002 A CNA2007100457002 A CN A2007100457002A CN 200710045700 A CN200710045700 A CN 200710045700A CN 101383305 A CN101383305 A CN 101383305A
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- quantum well
- coupling
- magnetic semiconductor
- multiple quantum
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Abstract
The invention relates to a method for measuring the coupling of a multiple-quantum well by using a dilute magnetic semiconductor, which is characterized in that large Zeeman splitting in the dilute magnetic semiconductor is used, the well depth or the base height is regulated and controlled by a magnetic field which is parallel to a growing direction, and the coupling multiple-quantum well is measured. A Zn0.8Cd0.2/ZnSe symmetrical coupling three-quantum well is taken as an example, the effectivity of an experimental scheme can be verified in theory. By using the provided method of the invention, the preparation requirement and the workload of a sample can be effectively reduced, and the experimental precision is increased.
Description
Technical field
The present invention relates to a kind of method of utilizing the coupling of dilute magnetic semiconductor measurement Multiple Quantum Well, the present invention relates to the method for measurement of the band structure of class II-coupling Multiple Quantum Well system of VI family or rather along with quantum well well depth (building high) variation.
Background technology
Utilize (II, Mn) the huge Zeeman splitting effect in the VI dilute magnetic semiconductor material, under low temperature condition (4.2K), spin up certainly and the downward energy state that spins has nearly tens to meV up to a hundred energy division under the action of a magnetic field that is parallel to the several teslas on the direction of growth.Utilize this characteristic, in the trap (base) of Multiple Quantum Well, carry out a spot of Mn and mix, can think that other physical parameter that constitutes trap (base) material remains unchanged.To the transition of different spin polarization directions, change the intensity of externally-applied magnetic field, be equivalent to well depth (the building high) parameter of change system, thereby change the band structure and the coupling behavior of system.Utilize circularly polarized light to measure the interband light absorption of the charge carrier of specific spin direction, can obtain the influence [S.Lee etc., Phys.Rev.B61,2120 (2000)] of well depth (building high) the system band structure.Utilize traditional experimental technique, research well depth (building height) needs the preparation series of parameters to obtain the strict sample of controlling, cost height, sample preparation difficulty height to coupling Multiple Quantum Well band structure and coupling behavior.Simultaneously, change well depth (building high), must change the alloy component of trap (base), parameter differences such as the alloy disorder that brings thus, stress, interface roughness are difficult to estimate to the influence of experimental result.
Summary of the invention
The object of the invention is to provide a kind of method of utilizing dilute magnetic semiconductor to measure the Multiple Quantum Well coupling.The method that adopts the present invention to propose, under the situation that does not change the sample structure parameter, can be in big well depth (building high) excursion, the variation of research Multiple Quantum Well band structure, avoided simultaneously since sample parameters different introduce as the influence of the difference of other parameters such as unordered, stress to experimental result, improve experimental precision and efficient, reduced experimental cost.Than quantum well of being used widely in microelectronics, optoelectronics field and coupling double quantum well, the coupling Multiple Quantum Well has more adjustable parameter, can satisfy more complicated technology application.The research different parameters can promote this application of class system in electronics and photoelectron technology to the band structure and the coupling behavior of coupling Multiple Quantum Well.
The method of utilizing dilute magnetic semiconductor to measure the Multiple Quantum Well coupling provided by the invention is characterized in that utilizing the huge Zeeman splitting of dilute magnetic semiconductor, and is high with the magnetic field regulation and control well depth or the base that are parallel to the direction of growth, to measure the variation of coupling Multiple Quantum Well band structure.
The Hamiltonian function of considering the coupling Multiple Quantum Well that comprises dilute magnetic semiconductor of exciton effect is
B wherein
J(x) be Brillouin function, g
MnThe=2nd, Mn
2+The g factor, μ
BBe Bohr magneton, k
BBe Boltzmann constant, T
0It is Curie temperature.
Under effective mass approximation, the interaction of coupling Multiple Quantum Well and light has following time-dependent Schrodinger equation to describe:
Wherein γ separates phase factor, and E (t) is a light field, and μ is a dipole matrix element.This moment, the optics polarizability can be expressed as:
Ω is a volume in the formula.Numerical solution [computational details can be consulted S.Glutsch et al.Phys.Rev.B 54,11592 (1996)] can be carried out in the real space in equation (3) and (4).
The present invention has following good effect and advantage:
1, only need prepare a slice sample and just can experimentize, avoid the error introduced in the sample preparation process, save cost simultaneously, improved the precision of efficient and experimental result.
2, provide the theoretical analysis method of this type of experimental result, and worked out corresponding numerical computations program.
Description of drawings
Fig. 1: adopt the structure of coupling Multiple Quantum Well in the calculating, x gets 0.2, and y gets 0.04.This moment, the effective mass of electronics was 0.19m
0, the effective mass of heavy hole is 0.66m
0, m
0Be the free electron quality.The well depth of conduction band and valence band is respectively 0.17eV and 0.08eV.
Fig. 2: magnetic field is the interband absorption spectra of 0 o'clock three quantum well that are coupled.
Fig. 3: under the different magnetic field intensity, by σ
+And σ
-The absorption spectra of light activated coupling three quantum well of circular polarization.
Embodiment
With Zn
0.8Cd
0.2Se/ZnSe symmetrical coupled three quantum well are example, and the validity of the experimental program that the present invention is proposed is verified in theory.The structure of taking as shown in Figure 1, building wide is 1.5nm, makes to have strong coupling between different quantum well, both sides at trap, the thick ZnSe resilient coating of 6nm is respectively arranged, make the exciton wavefunction that is in ground state and low excited state in resilient coating, decay to 0, eliminate the influence of border result of calculation.In middle trap, carried out molar concentration and be about 0.04 doping.In the case, N
0α and N
0The value of β is-0.27 and 0.90, T
0Value is 1.4K, and calculating the temperature of getting is 4.2K.
Fig. 2 has shown the absorption spectra of coupling Multiple Quantum Well when magnetic field is 0 tesla, because coupling, the hlel band-to-band transition is split into triplet.Compare with the absorption spectra that does not comprise exciton effect, the Coulomb attraction effect between electronics-heavy hole makes step-like absorption become absworption peak, and moves to the low energy direction.The binding energy that both contrasts can obtain exciton ground state is about 36meV, and under the material parameter situation that we got, the binding energy of three-dimensional exciton is 20meV, shows that the exciton in the coupling Multiple Quantum Well is between the two and three dimensions.
Fig. 3 has listed σ under the action of a magnetic field
+And σ
-The light activated absorption spectra of circular polarization, as can be seen under the action of a magnetic field, the band structure of coupling Multiple Quantum Well has obtained effective regulation and control, the resonance coupling of three quantum well is destroyed during greater than 2 teslas in magnetic field, transition corresponding to ground state shows individual behavior, and other transition still shows the weak coupling behavior.When magnetic field during greater than 6 teslas, the little transition peak of Landau damping correspondence has obviously appearred.Can think, under 4.2K, when magnetic field during less than 6 teslas, can effectively regulate and control the band structure of Multiple Quantum Well, the parabolic gesture introduced on the x-y plane of magnetic field can be ignored simultaneously.
Claims (5)
1, a kind of method of utilizing dilute magnetic semiconductor to measure the Multiple Quantum Well coupling is characterized in that utilizing the huge Zeeman splitting of dilute magnetic semiconductor, and is high with the magnetic field regulation and control well depth or the base that are parallel to the direction of growth, to measure the variation of coupling Multiple Quantum Well band structure.
2, by the described method of utilizing dilute magnetic semiconductor to measure the Multiple Quantum Well coupling of claim 1, it is characterized in that the Hamiltonian function of the coupling Multiple Quantum Well of described dilute magnetic semiconductor is
In the formula
, m
eOr m
h, m, e, ρ, z
eOr z
h, ε, ε
0, U
eOr U
hBe respectively the coordinate on distance, electronics or the heavy hole direction of growth between the electron hole in Planck's constant, electronics or heavy hole effective mass, electronics-heavy hole reduced mass, electron charge, the x-y plane, vacuum dielectric function, the relative dielectric function of material, electronics or heavy hole restriction gesture.ω
cBe cyclotron frequency, its value is eB/m, and B is a magnetic flux.
3, by the described method of utilizing dilute magnetic semiconductor to measure the Multiple Quantum Well coupling of claim 2, it is characterized in that for (II, Mn) VI dilute magnetic semiconductor, U in the Hamiltonian function
E, p-d=x
EffJ
P-d＜S
z(z
h) J
zRepresented the exchange interaction between the spin of free electron and Mn local, wherein x
EffIt is effective molar concentration of Mn; J
S-d=N
0α J
P-d=N
0β/3rd, exchange integral; s
z=± 1/2 (J
z=± 3/2) is the spin of electronics (heavy hole);＜S
zBe that the Mn local is average from the heat that is spun on the magnetic direction, its value is provided by Brillouin function:
B in the formula
J(x) be Brillouin function, g
MnThe=2nd, Mn
2+The g factor, μ
BBe Bohr magneton, k
BBe Boltzmann constant, T
0It is Curie temperature.
4, by each described method of utilizing dilute magnetic semiconductor to measure the Multiple Quantum Well coupling in the claim 1-3, it is characterized in that described dilute magnetic semiconductor general formula is Zn
1-x-yCd
xMn
ySe.
5, by the described method of utilizing dilute magnetic semiconductor to measure the Multiple Quantum Well coupling of claim 4, it is characterized in that describedly, the Mn of dilute magnetic semiconductor y=0.004 mole mixes, and building wide is 1.5nm, make to have coupling between different quantum well, the thick ZnSe resilient coating of 6nm is respectively arranged in the both sides of trap.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097206A (en) * | 2009-12-09 | 2011-06-15 | 吉林师范大学 | Low temperature growth method for wurtzite zinc sulfide base diluted magnetic semiconductor nanorod |
| CN102436532A (en) * | 2011-11-28 | 2012-05-02 | 华北电力大学 | Designing method of InAs/GaSb superlattice electronic structure |
| CN105304755A (en) * | 2015-10-29 | 2016-02-03 | 复旦大学 | Method for enhancing response rate of semiconductor quantum well infrared photo detector through electrical pulse modulation |
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| CN1174467C (en) * | 2001-08-15 | 2004-11-03 | 中国科学院半导体研究所 | Method for mfg. semiconductor/magnet/semicondustor threelayer structure |
| SE528901C2 (en) * | 2004-05-25 | 2007-03-13 | Nm Spintronics Ab | Magnetic filter barrier |
| CN100354638C (en) * | 2004-09-22 | 2007-12-12 | 中国科学院半导体研究所 | Measuring device of deep energy level transient state spectrum having external magnetic field and measuring method |
| CN1725446A (en) * | 2005-06-15 | 2006-01-25 | 浙江大学 | Zn1-x CoxO rare magnetic semiconductor film and its preparation technology |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097206A (en) * | 2009-12-09 | 2011-06-15 | 吉林师范大学 | Low temperature growth method for wurtzite zinc sulfide base diluted magnetic semiconductor nanorod |
| CN102436532A (en) * | 2011-11-28 | 2012-05-02 | 华北电力大学 | Designing method of InAs/GaSb superlattice electronic structure |
| CN105304755A (en) * | 2015-10-29 | 2016-02-03 | 复旦大学 | Method for enhancing response rate of semiconductor quantum well infrared photo detector through electrical pulse modulation |
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