CN102096346B - Silicon wafer photoresist-removing method and device and method for removing photoresist on silicon wafer by using developing bench - Google Patents
Silicon wafer photoresist-removing method and device and method for removing photoresist on silicon wafer by using developing bench Download PDFInfo
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- CN102096346B CN102096346B CN 200910242486 CN200910242486A CN102096346B CN 102096346 B CN102096346 B CN 102096346B CN 200910242486 CN200910242486 CN 200910242486 CN 200910242486 A CN200910242486 A CN 200910242486A CN 102096346 B CN102096346 B CN 102096346B
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Abstract
The invention discloses a silicon wafer photoresist-removing method and device and a method for removing photoresist on a silicon wafer by using a developing bench, relating to a manufacture technology of a semiconductor chip. The silicon wafer photoresist-removing method comprises the steps of: spraying a photoresist solvent on a silicon wafer; and after dissolving the photoresist on the silicon wafer, spraying water to clean the silicon wafer. In the silicon wafer photoresist-removing method and device provided by the embodiment of the invention, by using a developing cavity of an SSI series bench, because the SSI series bench per se has low cost and the photoresist solvent with lower cost is selected for spraying on the silicon wafer to remove the photoresist on the silicon wafer, after the photoresist is dissolved, the silicon wafer is directly washed with water without replacing the bench, therefore, the photoresist-removing period is shortened and the photoresist-removing cost is reduced.
Description
Technical field
The present invention relates to the semi-conductor chip manufacturing technology, relate in particular to silicon chip in a kind of semi-conductor chip manufacture process remove photoresist method, device and use developing machine platform to carry out the method that silicon chip removes photoresist.
Background technology
Photoresist is for the photo-conductive film to the base material with image transfer.In semiconductor fabrication process, adopt jet-coating photoresit equipment that photoresist coating is formed on base material, then this photoresist layer is exposed in the activating radiation source of passing photomask.This photomask has the zone that stops activating radiation and the zone that sees through activating radiation, and photoresist is exposed to the photoinduction chemical change that the activating radiation source provides photoresist coating, thus with the design transfer of photomask to the semiconductor substrate that scribbles photoresist.After exposure, this photoresist that develops is to provide a kind of stereo-picture that allows selectivity to process base material.
Can use SSI series board when developing, wherein, the development chamber of SSI500 board comprises as shown in Figure 1: cavity 101, developer solution pipeline 102, flushing pipeline 103 and slide holder 104, wherein:
The diameter of developer solution pipeline 102 is 0.25 inch, pipeline opening is over against the center of slide holder 104, when developing, outflow along with developer solution, slide holder 104 drives places superincumbent silicon chip rotation, make the developer solution that drops on the silicon chip center flow to surrounding, make whole silicon chip evenly be paved with developer solution;
after forming photoetching agent pattern, generally photoresist need to be removed, at present, in the manufacture process of semi-conductor chip, remove photoresist is all to use sulfuric acid to remove in acid tank, namely, silicon chip is immersed in sulfuric acid, after treating that photoresist on silicon chip is removed fully, again silicon chip is moved in the board of cleaning and clean, perhaps can also use the method for oxidation removal, but need to carry out in special oxidation chamber, high to equipment requirement, therefore the cost of device is also higher, no matter and use sulfuric acid remove photoresist or use oxidizing process to remove photoresist, remove photoresist and clean product and all need to operate in different boards, complicated operation, need the long time, therefore the cost that uses these two kinds of methods to remove photoresist is high and the cycle is long.
Summary of the invention
The embodiment of the present invention provides a kind of silicon chip remove photoresist method, device and use developing machine platform to carry out the method that silicon chip removes photoresist, and the cost that removes photoresist with reduction also shortens the cycle of removing photoresist.
A kind of silicon chip method of removing photoresist comprises:
Spray photoresist solvent on silicon chip;
After the dissolving of the photoresist on silicon chip, the spraying-rinsing silicon chip;
The described photoresist solvent that sprays on the silicon chip is specially:
Described photoresist solvent is 0.0625 inch from diameter, sprays mouth and becomes the pipeline of 45 degree to spray with described silicon chip;
Described spraying-rinsing silicon chip is specially:
Be 0.25 inch, spray mouthful perpendicular to the pipeline at described silicon chip center and spray water to described silicon chip by diameter.
Further, when spraying photoresist solvent on silicon chip, the rotating speed of the rotating speed of described silicon chip described silicon chip during less than water spray on silicon chip.
A kind of developing machine platform that uses comprises the method that silicon chip removes photoresist:
Be 0.0625 inch by diameter in the development chamber, spray mouth and become 45 pipelines of spending to spray photoresist solvent with described silicon chip on silicon chip;
After the photoresist on described silicon chip dissolving, be 0.25 inch, spray mouthful pipeline perpendicular to described silicon chip center to described silicon chip spraying-rinsing by diameter in the development chamber.
A kind of silicon chip device that removes photoresist, comprise: cavity (101) and be used for to place the slide holder (104) of silicon chip, comprise that also flushing pipeline (102) and the described flushing pipeline of photoresist solvent pipeline (103) (102), photoresist solvent pipeline (103) and slide holder (104) are arranged in described cavity (101), wherein:
Described photoresist solvent pipeline (103), the container that connects splendid attire photoresist solvent in central liquid-supplying system, be used for spraying photoresist solvent to described silicon chip, the angle of the photoresist solvent flow export of described photoresist solvent pipeline (103) and described slide holder (104) is 45 degree, and the diameter of described photoresist solvent pipeline (103) is 0.0625 inch;
Described flushing pipeline (102), the container that connects splendid attire pure water in described central liquid-supplying system, be used for after described photoresist dissolving, to described silicon chip water spray, the diameter of described flushing pipeline (102) is 0.25 inch, and the water delivering orifice of described flushing pipeline (102) is perpendicular to the center of described slide holder (104);
Better, also comprise control module, be used for controlling described slide holder (104) and drive described silicon slice rotating in the process of removing photoresist, and the rotating speed when controlling the rotating speed of described slide holder (104) when spraying photoresist solvent less than water spray.
Further, described control module also is used for, after the time that described photoresist solvent pipeline (103) sprays photoresist solvent arrives predefined value, controls described photoresist solvent pipeline (103) and stop spraying described photoresist solvent, and control described flushing pipeline (102) and begin to spray water.
The embodiment of the present invention provides a kind of silicon chip remove photoresist method, device and use developing machine platform to carry out the method that silicon chip removes photoresist, utilized the development chamber of SSI series board, because SSI family machine playscript with stage directions body cost is not high, by selecting the lower photoresist solvent of price to be sprayed on the photoresist that removes on silicon chip on silicon chip, after photoresist dissolving, directly rinse at water and get final product, need not to change board, remove photoresist the cycle thereby shorten, reduce the cost that removes photoresist.
Description of drawings
The structural representation of the device that removes photoresist that Fig. 1 provides for development cavity configuration schematic diagram and the embodiment of the present invention of SSI500 board in prior art;
The method flow diagram that removes photoresist that Fig. 2 provides for the embodiment of the present invention.
The specific embodiment party literary composition
The embodiment of the present invention provides a kind of silicon chip remove photoresist method, device and use developing machine platform to carry out the method that silicon chip removes photoresist, SSI series board by the usage comparison cheapness, EBR (the Edge BeadRemovel lower with price, the edge removes photoresist) realize removing photoresist of silicon chip, reduce the cost that removes photoresist, due to after the dissolving of the photoresist on silicon chip, do not needed to change board, directly just can water flushing silicon chip in the development chamber of SSI series board, thus the cycle of removing photoresist shortened.
The silicon chip that the embodiment of the present invention provides removes photoresist method as shown in Figure 2, comprising:
Step S201, spray photoresist solvent on silicon chip;
Step S202, after the photoresist on silicon chip dissolving, the spraying-rinsing silicon chip.
EBR diameter from SSI board development chamber is 0.0625 inch, sprays mouth becomes 45 degree with silicon chip pipelines sprinklings.When spraying photoresist solvent on silicon chip, silicon chip rotates in the development chamber, so that spray more even.
After the dissolving of the photoresist on silicon chip, be 0.25 inch, spray mouthful perpendicular to the pipeline at silicon chip center and spray water to silicon chip by diameter in SSI board development chamber, when water spray, silicon chip rotates with higher speed, get rid of to the silicon chip surrounding with the water that will drop on the silicon chip center, thus whole Wafer Cleaning is clean.
When spraying photoresist solvent, the speed that silicon chip rotates is that tens revolution per seconds are proper, and general value is 30-50 revolutions per second, and when hydroblasting, the revolution of silicon chip rotation p.s. is generally hundreds of to more than thousand, and general value is 600-1200 revolutions per second.
According to the difference of size, photoresist thickness and the photoresist solvent of silicon chip, the time of photoresist dissolving is also different, and is general, if use EBR as photoresist solvent, spraying EBR25 after second on silicon chip, can determine that the photoresist on silicon chip dissolves fully.
After the silicon chip method of removing photoresist of using the embodiment of the present invention to provide is removed photoresist, can find out by scanning, the numbers of particles on silicon chip can reach the standard of removing photoresist of General Requirements below 20.
Accordingly, the embodiment of the present invention also provides a kind of silicon chip device that removes photoresist, and the structural representation of this device is identical with Fig. 1, equally as shown in Figure 1, this device that removes photoresist comprises: cavity 101, flushing pipeline 102, photoresist solvent pipeline 103 and be used for placing the slide holder 104 of silicon chip, wherein:
The photoresist solvent that is used for the dissolving photoresist uses the low EBR of price comparison better, if the material of cavity and pipeline allows, also can use other photoresist solvents such as sulfuric acid.
The photoresist solvent flow export of photoresist solvent pipeline 103 and the angle of slide holder 104 are 45 degree, and the diameter of photoresist solvent pipeline 103 is 0.0625 inch.
The diameter of flushing pipeline 102 is 0.25 inch, and the water delivering orifice of flushing pipeline 102 is perpendicular to the center of slide holder 104.
Further, also comprise control module in device, be used for to control slide holder 104 and drive silicon slice rotating in the process of removing photoresist, and the rotating speed when controlling the rotating speed of slide holder 104 when spraying photoresist solvent less than water spray.
Further, control module also is used for, and spray the predefined value of time arrival of photoresist solvent at photoresist solvent pipeline 103 after, control photoresist solvent pipeline 103 and stop spraying photoresist solvent, and control flushing pipeline 102 begins water spray.
The embodiment of the present invention also provides a kind of SSI of use series developing machine platform to the method that silicon chip removes photoresist, and comprising:
Be 0.0625 inch by diameter in the development chamber, spray mouth and become 45 pipelines of spending to spray photoresist solvent with silicon chip on silicon chip, wherein, photoresist solvent can adopt EBR;
After the photoresist on silicon chip dissolving, be 0.25 inch by diameter in the development chamber, spray mouthful pipeline perpendicular to the silicon chip center to described silicon chip spraying-rinsing.
The embodiment of the present invention provides a kind of silicon chip remove photoresist method, device and use developing machine platform to carry out the method that silicon chip removes photoresist, utilized the development chamber of SSI series board, because SSI family machine playscript with stage directions body cost is not high, by selecting the lower photoresist solvent of price to be sprayed on the photoresist that removes on silicon chip on silicon chip, after photoresist dissolving, directly rinse at water and get final product, need not to change board, remove photoresist the cycle thereby shorten, reduce the cost that removes photoresist.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the embodiment of the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of claim of the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (6)
1. silicon chip method of removing photoresist, is characterized in that, comprising:
Spray photoresist solvent on silicon chip;
After the dissolving of the photoresist on silicon chip, the spraying-rinsing silicon chip;
The described photoresist solvent that sprays on the silicon chip is specially:
Described photoresist solvent is 0.0625 inch from diameter, sprays mouth and becomes the pipeline of 45 degree to spray with described silicon chip;
Described spraying-rinsing silicon chip is specially:
Be 0.25 inch, spray mouthful perpendicular to the pipeline at described silicon chip center and spray water to described silicon chip by diameter.
2. the method for claim 1, is characterized in that, when spraying photoresist solvent on silicon chip, and the rotating speed of the rotating speed of described silicon chip described silicon chip during less than water spray on silicon chip.
3. one kind is used developing machine platform to the method that silicon chip removes photoresist, and it is characterized in that, comprising:
Be 0.0625 inch by diameter in the development chamber, spray mouth and become 45 pipelines of spending to spray photoresist solvent with described silicon chip on silicon chip;
After the photoresist on described silicon chip dissolving, be 0.25 inch, spray mouthful pipeline perpendicular to described silicon chip center to described silicon chip spraying-rinsing by diameter in the development chamber.
4. silicon chip device that removes photoresist, comprise: cavity (101) and be used for to place the slide holder (104) of silicon chip, it is characterized in that, also comprise: flushing pipeline (102) and photoresist solvent pipeline (103), described flushing pipeline (102), photoresist solvent pipeline (103) and slide holder (104) are arranged in described cavity (101), wherein:
Described photoresist solvent pipeline (103), the container that connects splendid attire photoresist solvent in central liquid-supplying system, be used for spraying photoresist solvent to described silicon chip, the angle of the photoresist solvent flow export of described photoresist solvent pipeline (103) and described slide holder (104) is 45 degree, and the diameter of described photoresist solvent pipeline (103) is 0.0625 inch;
Described flushing pipeline (102), the container that connects splendid attire pure water in described central liquid-supplying system, be used for after described photoresist dissolving, to described silicon chip water spray, the diameter of described flushing pipeline (102) is 0.25 inch, and the water delivering orifice of described flushing pipeline (102) is perpendicular to the center of described slide holder (104).
5. device as claimed in claim 4, it is characterized in that, also comprise control module, be used for controlling described slide holder (104) and drive described silicon slice rotating in the process of removing photoresist, and the rotating speed when controlling the rotating speed of described slide holder (104) when spraying photoresist solvent less than water spray.
6. device as claimed in claim 5, it is characterized in that, described control module also is used for, spray the predefined value of time arrival of photoresist solvent at described photoresist solvent pipeline (103) after, control described photoresist solvent pipeline (103) and stop spraying described photoresist solvent, and control described flushing pipeline (102) begin the water spray.
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| CN 200910242486 CN102096346B (en) | 2009-12-15 | 2009-12-15 | Silicon wafer photoresist-removing method and device and method for removing photoresist on silicon wafer by using developing bench |
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| CN 200910242486 CN102096346B (en) | 2009-12-15 | 2009-12-15 | Silicon wafer photoresist-removing method and device and method for removing photoresist on silicon wafer by using developing bench |
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| CN102096346B true CN102096346B (en) | 2013-06-12 |
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| CN101228481A (en) * | 2005-02-25 | 2008-07-23 | Ekc技术公司 | Method to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric |
| CN101314159A (en) * | 2007-05-28 | 2008-12-03 | 索尼株式会社 | Substrate washing method and device |
| CN101320225A (en) * | 2007-06-05 | 2008-12-10 | 北京京东方光电科技有限公司 | Deionized water nozzle device and its spraying and brushing method |
| CN101354542A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist |
| CN201298145Y (en) * | 2008-11-11 | 2009-08-26 | 中芯国际集成电路制造(上海)有限公司 | Dry film cleaner |
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Patent Citations (8)
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| KR20050035419A (en) * | 2003-10-13 | 2005-04-18 | 엘지.필립스 엘시디 주식회사 | Fabrication apparatus and method of thin film transistor array substrate |
| CN101228481A (en) * | 2005-02-25 | 2008-07-23 | Ekc技术公司 | Method to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric |
| CN1975585A (en) * | 2005-12-02 | 2007-06-06 | 大日本网目版制造株式会社 | Substrate processing method and substrate processing apparatus |
| CN101187787A (en) * | 2006-11-17 | 2008-05-28 | 安集微电子（上海）有限公司 | Low etching photoresist cleaning agent and its cleaning method |
| CN101314159A (en) * | 2007-05-28 | 2008-12-03 | 索尼株式会社 | Substrate washing method and device |
| CN101320225A (en) * | 2007-06-05 | 2008-12-10 | 北京京东方光电科技有限公司 | Deionized water nozzle device and its spraying and brushing method |
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Effective date of registration: 20220718 Address after: 518116 founder Microelectronics Industrial Park, No. 5, Baolong seventh Road, Baolong Industrial City, Longgang District, Shenzhen, Guangdong Province Patentee after: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. Address before: 100871, Haidian District Fangzheng Road, Beijing, Zhongguancun Fangzheng building, 298, 513 Patentee before: PEKING UNIVERSITY FOUNDER GROUP Co.,Ltd. Patentee before: SHENZHEN FOUNDER MICROELECTRONICS Co.,Ltd. |
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