CN102096326A - Double exposure method and etching method - Google Patents
Double exposure method and etching method Download PDFInfo
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- CN102096326A CN102096326A CN2009102014629A CN200910201462A CN102096326A CN 102096326 A CN102096326 A CN 102096326A CN 2009102014629 A CN2009102014629 A CN 2009102014629A CN 200910201462 A CN200910201462 A CN 200910201462A CN 102096326 A CN102096326 A CN 102096326A
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Abstract
The invention provides a double exposure method and an etching method. The double exposure method comprises the following steps of: forming a first photoresist pattern layer on an intermediate film layer; forming an inorganic compound film on the previously formed first photoresist pattern layer; coating a photoresist layer on the inorganic compound film; and exposing and developing the photoresist layer to form a second photoresist pattern layer. In the embodiment of the invention, by depositing the inorganic compound film on the surface of the previously formed first photoresist pattern layer before the second photoresist layer is coated, corrosion of high-temperature baking and an organic solvent in the process of coating, exposing and developing the second photoresist layer is effectively resisted, so that the first photoresist pattern layer is prevented from being damaged, and subsequent etching quality and the product yield of a semiconductor device can be ensured.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to double-exposure method and lithographic method.
Background technology
Along with reducing gradually of dimensions of semiconductor devices, the pattern characteristics size also more and more levels off to the limit of photoetching treatment method, replenish as the powerful of the photoetching process of 32nm node, the method for distributing layout pattern and carrying out multiexposure, multiple exposure and etching on one or more mask plates is more and more used.
The applying date is on October 8th, 2006, application number is 200610160503.0, and publication number is CN1945444A) Chinese patent application " the positive tone resist layer on the photolithographic substrates is carried out the method for composition " and discloses a kind of double exposure twice etching and form method of patterning.Fig. 1-5 is the structural representation of semiconductor devices in this method processing procedure.At first, go up the formation hard mask 13 of one deck (HM) at substrate 11 and destination layer 12 (TL) as shown in Figure 1, and on hard mask layer 13, be coated with ground floor photoresist 14 (RL1).As shown in Figure 2, behind exposure imaging, form first photoresist pattern layer 15 (RM1), HM is carried out etching, obtain a layer structure according to this RM1.Then, as shown in Figure 3, remove RM1, coating second layer photoresist 16 (RL2) on the HM after the etching.As shown in Figure 4, RL2 carried out exposure imaging after, form second photoresist pattern layer 17 (RM2), according to this RM2 HM is carried out etching once more, form layer structure as shown in the figure.Then, as shown in Figure 5, the pattern that forms according to HM carries out etching to destination layer, after the etching HM, RM2 is removed, and finally obtains having RM1, the layer structure of RM2 pattern.But this method all needs to carry out an etching after exposure each time just can form final pattern, and process is loaded down with trivial details, and each etching has all increased the probability to substrate damage.
At the problems referred to above, the method for two exposures of available technology adopting single etching reduces the number of times of etching, simplifies generating operation, increases the product yield.In conjunction with Fig. 2,6, shown in 7, the difference of this method and aforementioned " the positive tone resist layer on the photolithographic substrates being carried out the method for composition " is, after the first time, exposure imaging obtained as shown in Figure 2 first photoresist pattern layer 15 (RM1), as shown in Figure 6, this RM1 that formerly forms is carried out physical or chemical treatment, directly be coated with second layer photoresist 21 (RL2) then, then, as shown in Figure 7, RL2 is carried out exposure imaging, the cambium layer structure, this layer body structure surface promptly had second photoresist pattern layer 22 (RM3), according to this RM1 and RM3 hard mask layer (HM) and destination layer (TL) are carried out etching then, after the etching with HM, RM1, RM3 removes, and finally obtains having RM1, the layer structure of RM2 pattern.
Wherein, because carry out exposure imaging forms in the process of RM3 at coating RL2 and to RL2, needing to carry out high temperature respectively cures and utilizes organic solvent to wash, this process can directly cause the RM1 fusion that formerly forms impaired, therefore before coating second layer photoresist, need the RM1 that formerly forms be handled in case impaired.Disposal route commonly used as:
1) adopting wavelength is that the light of 193nm carries out overall exposing, then at 210 ℃ of following thermal treatment 60s, thereby makes the RM1 material internal structure that formerly forms crosslinked.
2) adopt organic refrigeration material that the RM1 that formerly forms is fully freezed, thereby change the performance of photoresist among the RM1.
Yet, more than can cause the deformation etc. of first photoresist pattern layer that formerly forms to thermal treatment, the chemical treatment mode of first photoresist pattern layer, all inevitably can influence the quality of first photoresist pattern layer that formerly forms, eating pattern.
Summary of the invention
The embodiment of the invention provides a kind of double-exposure method and lithographic method, can prevent in the second photoresist pattern layer forming process the erosion of first photoresist pattern layer of formation formerly.
In order to solve the problems of the technologies described above, the technical scheme of the embodiment of the invention is as follows:
A kind of double-exposure method comprises:
On middle rete, form first photoresist pattern layer;
On described first photoresist pattern layer that formerly forms, form inorganic compound thin film;
On described inorganic compound thin film, be coated with photoresist layer;
Described photoresist layer is carried out exposure imaging, form second photoresist pattern layer.
Preferably, on described first photoresist pattern layer that formerly forms, deposit inorganic compound thin film being not more than under 220 ℃ the temperature.
Preferably, the method for using plasma chemical vapor deposition or ald deposits described inorganic compound thin film.
Preferably, the material of described inorganic compound thin film is silicon nitride or monox or silicon oxynitride.
Preferably, adopt SiH
4And N
2O carries out plasma activated chemical vapour deposition and generates described inorganic compound thin film.
Preferably, adopt SiH
4, H
2And NH
3Deposition generates described inorganic compound thin film.
Preferably, the thickness of described inorganic compound thin film is 1-10nm.
Preferably, the thickness of described inorganic compound thin film is 3-5nm.
Preferably, before coating photoresist layer on the described inorganic compound thin film, also comprise:
On described inorganic compound thin film, cover bottom antireflective coating.
Preferably, utilize before mask plate carries out exposure imaging to described photoresist layer, also comprise described:
On described photoresist layer, cover reflection coating provided.
A kind of lithographic method comprises:
On middle rete, form first photoresist pattern layer;
On described first photoresist pattern layer that formerly forms, form inorganic compound thin film;
On described inorganic compound thin film, be coated with photoresist layer;
Described photoresist layer is carried out exposure imaging, form second photoresist pattern layer;
Rete in the middle of described is carried out etching.
Preferably, on described first photoresist pattern layer that formerly forms, deposit inorganic compound thin film being not more than under 220 ℃ the temperature.
Preferably, the method for using plasma chemical vapor deposition or ald deposits described inorganic compound thin film.
Preferably, the material of described inorganic compound thin film is silicon nitride or monox or silicon oxynitride.
Preferably, adopt SiH
4And N
2O carries out plasma activated chemical vapour deposition and generates described inorganic compound thin film.
Preferably, adopt SiH
4, H
2And NH
3Deposition generates described inorganic compound thin film.
Preferably, the thickness of described inorganic compound thin film is 1-10nm.
Preferably, the thickness of described inorganic compound thin film is 3-5nm.
Preferably, in described first photoresist pattern layer that formerly forms the critical size of photoresist pattern less than the required target size of etching.
Preferably, before rete in the middle of described is carried out etching, also comprise:
Remove described inorganic compound thin film.
Preferably, adopt wet etching or plasma etching to remove described inorganic compound thin film.
Preferably, before coating photoresist layer on the described inorganic compound thin film, also comprise:
On described inorganic compound thin film, cover bottom antireflective coating.
Preferably, utilize before mask plate carries out exposure imaging to described photoresist layer, also comprise described:
On described photoresist layer, cover reflection coating provided.
In the embodiment of the invention; by before coating second layer photoresist, on the first photoresist pattern layer surface that formerly forms, depositing inorganic compound thin film; effectively resist in second layer photoresist coating and exposure imaging process high temperature and cured erosion with organic solvent; thereby protected the pattern of first photoresist pattern layer not to be damaged, and then can guarantee the quality of subsequent etching and the product yield of semiconductor devices.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1-the 5th, the structure diagram of semiconductor devices in the double-exposure multiple etching process in the prior art;
Fig. 6-the 7th, the structure diagram of semiconductor devices in the double-exposure process in the prior art;
Fig. 8 is the double-exposure method process flow diagram of the embodiment of the invention one;
Fig. 9-the 13rd, the structure diagram of semiconductor devices among the embodiment one;
Figure 14 is the lithographic method process flow diagram of the embodiment of the invention two;
Figure 15-the 16th, the structure diagram of embodiment two semiconductor devices;
Figure 17 is the structure diagram of first photoresist pattern layer among the embodiment two;
Figure 18 is the lithographic method process flow diagram of the embodiment of the invention three;
Figure 19-the 20th, the structure diagram of semiconductor devices among the embodiment three.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Set forth a lot of details in the following description so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with synoptic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of indication device structure can be disobeyed general ratio and be done local the amplification, and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
At present, adopting double-exposure to form in the photoresist method of patterning, for fear of in the photoresist coating second time and exposure imaging process to the erosion and the damage of first photoresist pattern layer that formerly forms, the character that modes such as normal open bakingout process or chemical treatment change photoresist in first photoresist pattern layer prevents impaired, but these modes can cause the fusion or the deformation of first photoresist pattern layer, all inevitably first photoresist pattern layer can be influenced even corrode, and then the quality of subsequent etching and the product yield of semiconductor devices can be had influence on.
Based on this; the invention provides a kind of double-exposure method and lithographic method; this method formed inorganic compound thin film on first photoresist pattern layer that formerly forms before coating second layer photoresist; this inorganic compound thin film; cure and organic solvent for the high temperature that uses in the coating of second layer photoresist and the exposure imaging process; neither fusion at high temperature or deformation; can chemical reaction not take place with organic solvent etc.; so can effectively resist thermal treatment or chemically treated erosion; not only can protect first photoresist pattern layer that formerly forms not weather; pattern can be do not influenced again, and then the quality of subsequent etching and the product yield of semiconductor devices can be guaranteed.
Below in conjunction with drawings and Examples, technical scheme of the present invention is described in detail.
With reference to Fig. 8, be the double-exposure method process flow diagram of the embodiment of the invention one, Fig. 9-13 is the structure diagram of semiconductor devices in the processing procedure.
This disposal route can comprise:
Step 101 provides a middle rete 41.
This centre rete 41 can be monocrystalline silicon or polysilicon element semiconductor substrate or compound semiconductor substrate, also can be the overlayer on the semiconductor devices that forms certain pattern, and is unrestricted herein.
Step 103 as shown in figure 10, adopts mask plate to ground floor photoresist 42 exposure imagings, forms first photoresist pattern layer (RMA) 43.
Above step and prior art are similar, repeat no more herein.
Step 104 as shown in figure 11, forms inorganic compound thin film 44 on first photoresist pattern layer 43.
Can adopt the method for deposition in this forming process, because photoresist is an organic material, deformation easily takes place at high temperature, so when this inorganic compound thin film of deposition, try one's best and carry out at low temperatures, in the present embodiment, depositing temperature can be controlled under the condition that is no more than 220 ℃ and carry out, minimum temperature can be controlled at 20 ℃, the method deposition of using plasma chemical vapor deposition (PECVD) or ald (ALD) is finished, wherein, this inorganic compound thin film 44 can be silicon nitride film or silicon oxide film or silicon oxynitride film etc.Because this film is an inorganic compound thin film; cure and organic solvent for the high temperature that uses in the coating of second layer photoresist and the exposure imaging process; neither fusion at high temperature or deformation; can chemical reaction not take place with organic solvent etc.; so can effectively resist thermal treatment or chemically treated erosion, thereby protection RMA is not damaged.
Concrete, this deposition process can adopt SiH
4And N
2O carries out plasma activated chemical vapour deposition and generates inorganic compound thin film 44, perhaps adopts SiH
4, H
2And NH
3Carry out chemogenic deposit and generate silicon nitride film or silicon oxynitride film, this deposition process and existing film deposition techniques are similar, repeat no more herein.In practical operation, can block exposed middle rete 41 surfaces, only, also can directly deposit above-mentioned inorganic compound thin film 44 simultaneously on surface and exposed middle rete 41 surfaces of RMA43 for easy and simple to handle to RMA43 surface deposition inorganic compound thin film.
More than the thickness of the inorganic compound thin film 44 of Xing Chenging is unsuitable blocked up, in order to avoid make the spacing of second photoresist pattern layer 46 (RMB) of RMA43 and follow-up formation too small, be unfavorable for follow-up etching operation, these inorganic compound thin film 44 thickness also should not be set thin, in order to avoid in deposition process among the RMA43 sidewall of photoresist can not be covered fully by this inorganic compound thin film 44, thickness can be set at 1-10nm, is preferably 3-5nm.
In actual mechanical process, can directly on the surface of RMA43, directly deposit the inorganic compound thin film 44 of preset thickness, also can in step 103, make the width of critical size (CD) of photoresist pattern among the RMA43 target size CD width value more required little than actual etching, so that the critical size of photoresist pattern satisfies the required target size of actual etching together with the pattern width that the thickness of the inorganic compound thin film 44 that deposits on the photoresist sidewall among the RMA43 forms altogether among the RMA43, thereby guarantee the ease for operation of subsequent etching, detailed process herein sees also the description of subsequent embodiment.
After deposition inorganic compound thin film 44 is finished, can directly change step 106 over to and on this inorganic compound thin film 44, be coated with second layer photoresist 45, also can enter step 105.
Step 105 covers bottom antireflective coating on inorganic compound thin film 44.
In order to prevent when the second layer resist exposure, incident wave and reflection wave form standing wave and influence the exposure effect of photoresist on inorganic compound thin film 44, can cover one deck bottom antireflective coating (BARC) (not shown) on this inorganic compound thin film 44 earlier.This BARC can be organic antireflective coating (Organic), in the silicon chip surface spin coating, relies on organic layer directly to receive to fall into and penetrates light; Also can be inorganic anti-reflective coating (Inorganic), utilize plasma reinforced chemical vapour deposition (PECVD, Plasma Enhanced Chemical Vapour Deposition) to form at silicon chip surface.The thickness of BARC can be according to the thickness setting of optical source wavelength and second layer photoresist.For example can select AR40 that ROHM AND HAAS (Rohm and Hass) provides as BARC, thickness can be 40nm-300nm.
When coating second layer photoresist 45, its thickness can be equal to or a little more than the thickness sum of inorganic compound thin film 44 and RMA43, for example can slightly exceed 20-80nm, and can adopt the lower photoresist material of glutinousness, the TArF-PP006 that provides as TOK is so that form the comparatively smooth PR245 in surface.
In the present embodiment, also can also be after forming PR245, on PR245, cover reflection coating provided (TARC) (not shown), to reduce the reflection wave on PR245, thereby reduce the formation of standing wave, reduction is to the influence of resist exposure effect, for example can select for use AQ8 that AZ provides as TARC, and thickness can be 50nm-500nm.
Step 107 adopts mask plate to second layer photoresist 45 exposure imagings, forms second photoresist pattern layer 46 (RMB).
As shown in figure 13, behind this PR245 exposure imaging, promptly form RMB46, thereby on middle rete 41, formed RMA43 and RMB46, thus can be in subsequent operation can be to middle rete 41 by etching with the photoresist design transfer of this RMA43 and RMB46.
In the embodiment of the invention; by before coating second layer photoresist at the surface deposition inorganic compound thin film of first photoresist pattern layer that formerly forms; effectively resist in second layer photoresist coating and exposure imaging process high temperature and cured erosion with organic solvent; thereby protected first photoresist pattern layer not to be damaged, and then can guarantee the quality of subsequent etching and the product yield of semiconductor devices.
Based on above-mentioned double-exposure method, the present invention also provides a kind of lithographic method, be used for after double exposure forms RMA and RMB, through etching with the photoresist design transfer of RMA and RMB to middle rete, specifically see also following examples.
Referring to Figure 14, be the lithographic method process flow diagram of the embodiment of the invention two, Figure 15-16 is the structure diagram of the semiconductor devices after this etching processing.
This lithographic method can comprise:
Step 201 provides a middle rete 61.
Above step 201,202 and previous embodiment one in similar, repeat no more herein.
Step 203 adopts mask plate that the ground floor photoresist is carried out exposure imaging, forms first photoresist pattern layer 62 (RMC), and among the RMC62 critical size of photoresist pattern less than the required target size of etching.
As shown in figure 17, suppose that the required target size of etching is X
1, the critical size of photoresist pattern is X among the RMC62
2, X
1-X
2=X, then in the present embodiment, by mask plate being set or changing Exposure mode, making the critical size that obtains photoresist pattern among the RMC62 is X
2
Step 204 forms inorganic compound thin film 63 on first photoresist pattern layer 62.
This forming process can adopt the method for deposition to realize, for easy and simple to handle also can be directly on the surface of RMC62 and the surface of the middle rete 61 that exposes deposit inorganic compound thin film 63 simultaneously.In the process of deposition inorganic compound thin film 63, be deposited on the inorganic compound thin film thickness T Hsi on the sidewall of photoresist among the RMC62, less with respect to rete 61 lip-deep inorganic compound thin film thickness T Hsu in the middle of being deposited on, suppose S=THsi/THsu, then for after guaranteeing to deposit inorganic compound thin film 63, the critical size X of the photoresist pattern among the RMC62
2The target size X of foundation when the thickness THis that adds photoresist sidewall both sides reaches etching
1, needing to set inorganic compound thin film 63 thickness that are deposited on middle rete 61 exposed surfaces in this step is 0.5X/S, then after the deposition, the thickness on the photoresist sidewall is one-sided is 0.5X.
More than the thickness of the inorganic compound thin film 63 of Xing Chenging is unsuitable blocked up, in order to avoid make the spacing of RMC62 and follow-up second photoresist pattern layer 64 (RMD) too small, be unfavorable for follow-up etching operation, these inorganic compound thin film 63 thickness also should not be set thin, so as not in deposition process among the RMC62 sidewall of photoresist can not be covered fully by this inorganic compound thin film 63.In the present embodiment, the thickness that is deposited on the inorganic compound thin film 63 on the sidewall of photoresist among the RMC62 should be 70% of the lip-deep inorganic compound thin film thickness that is deposited on RMC62 at least, be that S is not less than 70%, the thickness of this inorganic compound thin film 63 can be set at 1-10nm, is preferably 3-5nm.
In this step, the process and the step among the embodiment one of deposition inorganic compound thin film 63 are similar, repeat no more herein.After deposition is finished, can directly change step 205 over to and on this inorganic compound thin film 63, be coated with second layer photoresist equally, also can on inorganic compound thin film, cover bottom antireflective coating earlier, enter step 205 then.
When coating second layer photoresist, can make the thickness (for example can exceed 20-80nm) of its thickness, and can adopt the lower PR material of glutinousness, so that form the comparatively smooth PR2 layer in surface a little more than RMC62.
In the present embodiment, also can also cover reflection coating provided (TARC) on PR2 after forming PR2, with the reflection wave of minimizing on PR2, thereby the formation of minimizing standing wave reduces the influence to the resist exposure effect.
Step 206 adopts mask plate that described second layer photoresist is carried out exposure imaging, forms second photoresist pattern layer 64 (RMD).
Step 207 is carried out etching to rete 61 in the middle of described.
In this step, as shown in figure 15, according to target size X
1And RMD64, middle rete 61 is carried out etching, etching to middle rete 61 can comprise being deposited on the selective etch removal of middle rete 61 lip-deep inorganic compound thin films 63, and after the inorganic compound thin film 63 on middle rete 61 surfaces is removed, the etching of exposed middle rete 61.Selective etch to the inorganic compound thin film 63 on middle rete 61 surfaces can carry out etching according to the one-tenth component selections chemical gas or the chemical agent of this compound, for example, if this inorganic compound thin film 63 is a silicon nitride film, then can select CHF
3, orCH
3F, N2, O2.Carry out etching, concrete etching parameters is provided with according to the parameter of the design of reaction chamber and layer to be etched etc., and this process can adopt the method for prior art to realize, repeats no more herein.
Then as shown in figure 16, can adopt methods such as wet etching or plasma etching that the inorganic compound thin film on the photoresist sidewall among the RMC62 63 is removed, and with remaining RMC62 and RMD64 cleaning removal, thereby the middle rete after the formation etching as shown in the figure.
In the embodiment of the invention; by before coating second layer photoresist; at the first photoresist pattern layer surface deposition inorganic compound thin film that formerly forms; effectively resist in second layer photoresist coating and exposure imaging process high temperature and cured erosion with organic solvent; thereby protected first photoresist pattern layer that formerly forms not to be damaged, and then can guarantee the quality of etching and the product yield of semiconductor devices.
Referring to Figure 18, be the lithographic method process flow diagram of the embodiment of the invention three, Figure 19-20 is the structure diagram of the semiconductor devices after this etching processing.
This lithographic method can comprise:
Step 301 provides a middle rete 91.
Step 303 adopts mask plate that described ground floor photoresist is carried out exposure imaging, forms first photoresist pattern layer 92 (RME).
The thickness of this inorganic compound thin film 93 can be set at 1-10nm, is preferably 3-5nm.Can on this inorganic compound thin film 93, cover one deck bottom antireflective coating (BARC) earlier and enter step 305 again.
Can also after forming second layer photoresist, cover reflection coating provided (TARC).
Similar in above step 301～306 and the previous embodiment one, repeat no more herein.
Step 307 is removed inorganic compound thin film 93.
Therefore in the present embodiment, can remove inorganic compound thin film 93 earlier, and then middle rete 91 is carried out etching, in step 302, need not to make the critical size of photoresist pattern among the RME92 of formation to diminish, and can directly form the required target size of etching.The method of this removal inorganic compound thin film 93 can adopt the non-selectivity lithographic method to inorganic compound thin film 93, as wet etching or isotropic plasma etching method, removes inorganic compound thin film 93 back formation structure as shown in figure 20.
Step 308 is carried out etching to middle rete 91.
After inorganic compound thin film 93 is removed, can carry out etching to middle rete 91 according to RME92, RMF94 on the middle rete 91, middle rete 91 surperficial remaining photoresists are cleaned remove after, promptly form the middle rete after the etching.
In the embodiment of the invention; by before coating second layer photoresist, on the first photoresist pattern layer surface that formerly forms, depositing inorganic compound thin film; effectively resist in second layer photoresist coating and exposure imaging process high temperature and cured erosion with organic solvent; thereby protect first photoresist pattern layer not to be damaged, and then can guarantee the quality of etching and the product yield of semiconductor devices.
" ground floor " in the various embodiments described above and " second layer " in order to distinguish two photoresist layers that successively form and two photoresist pattern layers that successively form, are not to refer in particular to or limit only.The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Said method also not only is confined to double-exposure, also can repeat corresponding steps based on the above method for the disposal route of multiexposure, multiple exposure and can realize.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (23)
1. a double-exposure method is characterized in that, comprising:
On middle rete, form first photoresist pattern layer;
On described first photoresist pattern layer that formerly forms, form inorganic compound thin film;
On described inorganic compound thin film, be coated with photoresist layer;
Described photoresist layer is carried out exposure imaging, form second photoresist pattern layer.
2. method according to claim 1 is characterized in that, deposits inorganic compound thin film being not more than under 220 ℃ the temperature on described first photoresist pattern layer that formerly forms.
3. method according to claim 1 is characterized in that the method for using plasma chemical vapor deposition or ald deposits described inorganic compound thin film.
4. method according to claim 1 is characterized in that, the material of described inorganic compound thin film is silicon nitride or monox or silicon oxynitride.
5. method according to claim 1 is characterized in that, adopts SiH
4And N
2O carries out plasma activated chemical vapour deposition and generates described inorganic compound thin film.
6. method according to claim 1 is characterized in that, adopts SiH
4, H
2And NH
3Deposition generates described inorganic compound thin film.
7. according to any described method in the claim 1 to 6, it is characterized in that the thickness of described inorganic compound thin film is 1-10nm.
8. method according to claim 7 is characterized in that, the thickness of described inorganic compound thin film is 3-5nm.
9. according to any described method in the claim 1 to 6, it is characterized in that, before coating photoresist layer on the described inorganic compound thin film, also comprise:
On described inorganic compound thin film, cover bottom antireflective coating.
10. according to any described method in the claim 1 to 6, it is characterized in that, utilize before mask plate carries out exposure imaging to described photoresist layer, also comprise described:
On described photoresist layer, cover reflection coating provided.
11. a lithographic method is characterized in that, comprising:
On middle rete, form first photoresist pattern layer;
On described first photoresist pattern layer that formerly forms, form inorganic compound thin film;
On described inorganic compound thin film, be coated with photoresist layer;
Described photoresist layer is carried out exposure imaging, form second photoresist pattern layer;
Rete in the middle of described is carried out etching.
12. method according to claim 11 is characterized in that, deposits inorganic compound thin film being not more than under 220 ℃ the temperature on described first photoresist pattern layer that formerly forms.
13. method according to claim 11 is characterized in that, the method for using plasma chemical vapor deposition or ald deposits described inorganic compound thin film.
14. method according to claim 11 is characterized in that, the material of described inorganic compound thin film is silicon nitride or monox or silicon oxynitride.
15. method according to claim 11 is characterized in that, adopts SiH
4And N
2O carries out plasma activated chemical vapour deposition and generates described inorganic compound thin film.
16. method according to claim 11 is characterized in that, adopts SiH
4, H
2And NH
3Deposition generates described inorganic compound thin film.
17., it is characterized in that the thickness of described inorganic compound thin film is 1-10nm according to any described method in the claim 11 to 16.
18. method according to claim 17 is characterized in that, the thickness of described inorganic compound thin film is 3-5nm.
19., it is characterized in that the critical size of photoresist pattern is less than the required target size of etching in described first photoresist pattern layer that formerly forms according to any described method in the claim 11 to 16.
20. according to any described method in the claim 11 to 16, it is characterized in that, before rete in the middle of described is carried out etching, also comprise:
Remove described inorganic compound thin film.
21. method according to claim 20 is characterized in that, adopts wet etching or plasma etching to remove described inorganic compound thin film.
22. according to any described method in the claim 11 to 16, it is characterized in that, before coating photoresist layer on the described inorganic compound thin film, also comprise:
On described inorganic compound thin film, cover bottom antireflective coating.
23., it is characterized in that according to any described method in the claim 11 to 16, utilize before mask plate carries out exposure imaging to described photoresist layer described, also comprise:
On described photoresist layer, cover reflection coating provided.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114035407A (en) * | 2021-11-01 | 2022-02-11 | 中国科学院微电子研究所 | Electron beam exposure method and device for forming inverted T-shaped structure and electronic equipment |
| CN114534647A (en) * | 2022-01-04 | 2022-05-27 | 北京航空航天大学 | Film emulsifying device and manufacturing method thereof |
| WO2023109393A1 (en) * | 2021-12-16 | 2023-06-22 | 中国科学院光电技术研究所 | Photoetching method |
-
2009
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114035407A (en) * | 2021-11-01 | 2022-02-11 | 中国科学院微电子研究所 | Electron beam exposure method and device for forming inverted T-shaped structure and electronic equipment |
| WO2023109393A1 (en) * | 2021-12-16 | 2023-06-22 | 中国科学院光电技术研究所 | Photoetching method |
| CN114534647A (en) * | 2022-01-04 | 2022-05-27 | 北京航空航天大学 | Film emulsifying device and manufacturing method thereof |
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| CN102096326B (en) | 2012-12-05 |
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