CN102092781A - Method for preparing battery grade indium hydroxide and indium oxide - Google Patents
Method for preparing battery grade indium hydroxide and indium oxide Download PDFInfo
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Abstract
The invention discloses a method for preparing battery grade indium hydroxide and indium oxide, which aims to provide the method for preparing the indium hydroxide and the indium oxide. The method ensures simple process, relatively lower cost and relatively higher product quality. In the method, refined indium solids serve as raw materials; and the method is characterized by comprising the following steps of: A, melting and water quenching, namely, performing melting and water quenching on the refined indium solids to prepare indium flowers; B, nitric acid dissolution, namely, adding a nitric acid into the indium flowers prepared by the step A to dissolve the indium flowers to obtain solution of indium nitrate; C, the neutralization and filtration of ammonia water, namely, adding the ammonia water into the solution of indium nitrate obtained by the step B for neutralization and filtration to prepare indium hydroxide filtration residues and filtrate, and separately treating the filtrate; and D, drying, powder preparation and calcination, namely, adding water into the indium hydroxide filtration residues obtained by the step C for washing and filtration to obtain filtration residues and the filtrate, separately treating the filtrate, and performing drying, powder preparation and calcination on the filtration residues to obtain the battery grade indium hydroxide and the indium oxide. The method is mainly used for preparing the high-quality indium hydroxide and the high-quality indium oxide.
Description
Technical field
The present invention relates to the preparation method of a kind of indium hydroxide and Indium sesquioxide, relate in particular to the preparation method of a kind of cell-grade indium hydroxide and Indium sesquioxide.
Background technology
Indium hydroxide is that outward appearance is the powder of white, and Indium sesquioxide is that outward appearance is flaxen powder, and is of many uses.Indium hydroxide and Indium sesquioxide are mainly used in alkaline Mn cell corrosion inhibitor as mercury substitute and getter, also are widely used in traditional field such as tinted shade, pottery, chemical reagent.Be widely used in high-technology field and military fields such as photoelectricity industry in recent years, be specially adapted to process indium tin oxide (ITO) target, make transparency electrode and transparent heat reflection body material, be used for production flat liquid crystal display and demist ice device.It is one of research focus of current information high-tech area.
Present domestic cell-grade indium hydroxide and Indium sesquioxide manufacturing enterprise mostly are medium and small sized enterprises, adopt liquid-phase precipitation method technology mostly.But the indium hydroxide and the Indium sesquioxide that are used for battery have higher requirement to granularity, purity and flowability.Owing in N-process, do precipitation agent and pH value adjustment agent with sodium hydroxide, brought the more sodium ion that is difficult to wash into, and hold inaccurate to the concentration of raw material and precipitation agent, cause the indium hydroxide produced and Indium sesquioxide to exist more or less on quality product that purity is not high, granularity is thicker and the defective of inhomogeneous and mobile difference, also easily cause the rising of cost in process of production.
It is the problem that the present invention will solve that a kind of quality is higher, technology is simple, cost the is relatively low cell-grade indium hydroxide and the preparation method of Indium sesquioxide are provided.
Summary of the invention
The object of the present invention is to provide the preparation method of a kind of cell-grade indium hydroxide and Indium sesquioxide, it can prepare cell-grade indium hydroxide and the Indium sesquioxide that granularity is 0.6～1.2 μ m, the utilization ratio of indium reaches more than 99.8%, and has the advantage that quality is higher, technology is simple, cost is relatively low.
Another object of the present invention is to provide a kind of cell-grade indium hydroxide and Indium sesquioxide, it is that granularity is 0.6～1.2 μ m spherical agglomerates.
For achieving the above object, technical solution of the present invention is: the preparation method of a kind of cell-grade indium hydroxide and Indium sesquioxide is a raw material with the smart indium of solid, it is characterized in that following steps:
A, fusion, shrend are made the indium flower with the smart indium fusing of solid, shrend;
B, nitric acid dissolve, the indium flower that steps A is made adds nitric acid dissolve and makes indium nitrate solution;
C, ammoniacal liquor neutralization precipitation, the indium nitrate solution that step B is obtained adds in the ammoniacal liquor and filtration, makes indium hydroxide filter residue and filtrate, the filtrate otherwise processed;
D, drying, powder process, calcining, the indium hydroxide filter residue that step C is obtained adds water washing, filtration, obtains filter residue and filtrate, and the filtrate otherwise processed makes cell-grade hydrogen-oxygen flower indium and Indium sesquioxide after filter residue drying, powder process, the calcining.
Described molten indium temperature is 160～200 ℃, and the solvent of described water-quenching water, salpeter solution, ammonia soln is specific conductivity less than 500us/cm, solubility SiO
2Be lower than the water of 0.02mg/L.
The concentration expressed in percentage by weight of described salpeter solution is 68%, In in the described indium nitrate solution
3+Volumetric molar concentration is 0.5～1.5mol/L.
The concentration expressed in percentage by weight of described ammoniacal liquor is 8.4～12.8%.
The building-up reactions of described indium nitrate solution and ammonia soln be end liquid with water, continue to stir, pH is 4.0～6.0, temperature of reaction is that 60 ℃～90 ℃, reaction times are to carry out under the condition of 2～4h.
Described washing step is to adopt specific conductivity less than 500us/cm, solubility SiO
2The water slurry that is lower than 0.02mg/L is washed 2～3 times, and drip washing is 2～3 times again.
Described drying, powder process, drying step is that drying temperature was 90 ℃～160 ℃ with the white filter cake after the drip washing in loft drier dry 3～6 hours again; Put into thermostatic drying chamber then dry 3～5 hours, temperature is 160 ℃～200 ℃, and obtaining granularity after the cooling is 0.6～1.2 μ m cell-grade indium hydroxide.
Described calcining step is indium hydroxide to be put into calcining furnace calcined 3～5 hours, and temperature is 400～600 ℃, and obtaining granularity after the cooling is 0.6～1.2 μ m cell-grade Indium sesquioxide.
The granularity of described cell-grade indium hydroxide and Indium sesquioxide is 0.6～1.2 μ m spherical agglomerates.
The invention has the beneficial effects as follows: method technology of the present invention is simple, and cost is relatively low, can obtain higher indium hydroxide of quality and Indium sesquioxide.
1, indium is spent with the resulting bismuth nitrate solution of nitric acid reaction the hydrolysis that keeps the excessive state of nitric acid, can suppress bismuth in the bismuth nitrate solution.
2, pH value, temperature of reaction and the reaction times of the present invention by the control neutralization reaction, can transfer indium to indium hydroxide fully, and effective controls reaction speed.
3, the indium hydroxide that obtains of neutralization through wash and starch with drip washing, can be with attached to the NH on the bismuth hydroxide
4 +, NO
3 -Flush away, the purity of raising product.
4, the present invention selects for use ammoniacal liquor to make precipitation agent, adopts ammoniacal liquor and indium nitrate solution reaction to generate the indium hydroxide precipitation, need not to add dispersion agent in the precipitation process, need not to adopt the raw material that contains sodium ion, has avoided bringing in the product Na that is difficult to clean removal
+, fundamentally stopped to contain in the product Na
+, avoided the sodium salt pollution.
On the other hand, by controlling the ammonia concn and the concentration of indium nitrate, the speed of response of may command neutralization reaction, thereby make resulting indium hydroxide granularity refinement and even, drying, powder process, drying can obtain the cell-grade indium hydroxide powder having that granularity is 0.6～1.2 μ m, indium hydroxide powder having is through calcining, obtaining granularity is the cell-grade Indium sesquioxide powder of 0.6～1.2 μ m, has reduced the production cost of cell-grade indium hydroxide and Indium sesquioxide powder.
5, by control indium hydroxide time of drying and temperature, can prevent the caking of indium hydroxide in drying process; By controlling calcination time and temperature, can preventing indium hydroxide burning or sintering, influence quality product.
Gained cell-grade indium hydroxide of the present invention and Indium sesquioxide fine size and even, powder active is good, and indium recovery has low, the advantage of simple technology of cost up to more than 99.8%, has good economic feasibility.
Description of drawings
Accompanying drawing is a process flow sheet of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention and embodiment thereof are described in further detail.
Referring to accompanying drawing, the present invention is a raw material with the smart indium of solid, it is characterized in that following steps:
A, fusion, shrend are made the indium flower with the smart indium fusing of solid, shrend;
B, nitric acid dissolve, the indium flower that steps A is made adds nitric acid dissolve and makes indium nitrate solution;
C, ammoniacal liquor neutralization precipitation, the indium nitrate solution that step B is obtained adds in the ammoniacal liquor and filtration, makes indium hydroxide filter residue and filtrate, the filtrate otherwise processed;
D, drying, powder process, calcining, the indium hydroxide filter residue that step C is obtained adds water washing, filtration, obtains filter residue and filtrate, and the filtrate otherwise processed makes cell-grade hydrogen-oxygen flower indium and Indium sesquioxide after filter residue drying, powder process, the calcining.
Described molten indium temperature is 160～200 ℃, and the solvent of described water-quenching water, salpeter solution, ammonia soln is specific conductivity less than 500us/cm, solubility SiO
2Be lower than the water of 0.02mg/L.
The concentration expressed in percentage by weight of described salpeter solution is 68%, In in the described indium nitrate solution
3+Volumetric molar concentration is 0.5～1.5mol/L.
The concentration expressed in percentage by weight of described ammoniacal liquor is 8.4～12.8%.
The building-up reactions of described indium nitrate solution and ammonia soln be end liquid with water, continue to stir, pH is 4.0～6.0, temperature of reaction is that 60 ℃～90 ℃, reaction times are to carry out under the condition of 2～4h.
Described washing step is to adopt specific conductivity less than 500us/cm, solubility SiO
2The water slurry that is lower than 0.02mg/L is washed 2～3 times, and drip washing is 2～3 times again.
Described drying, powder process, drying step is that drying temperature was 90 ℃～160 ℃ with the white filter cake after the drip washing in loft drier dry 3～6 hours again; Put into thermostatic drying chamber then dry 3～5 hours, temperature is 160 ℃～200 ℃, and obtaining granularity after the cooling is 0.6～1.2 μ m cell-grade indium hydroxide.
Described calcining step is indium hydroxide to be put into calcining furnace calcined 3～5 hours, and temperature is 400～600 ℃, and obtaining granularity after the cooling is 0.6～1.2 μ m cell-grade Indium sesquioxide.
The granularity of described cell-grade indium hydroxide and Indium sesquioxide is 0.6～1.2 μ m spherical agglomerates.
Cell-grade indium hydroxide of the present invention and Indium sesquioxide preparation method, it is that the solid indium of 4N (4 9) is synthetic cell-grade indium hydroxide of raw material and Indium sesquioxide with purity, it is characterized in that: it is to be earlier the molten indium Water Quenching of solid indium warp of 4N with purity, obtain the indium flower, take out with salpeter solution and react, take out with salpeter solution and react, obtain indium nitrate solution, and keep the excessive state of nitric acid, and indium nitrate solution is mixed with ammonia soln carry out neutralization reaction, filter and obtain white filter cake, wash according to a conventional method, dry, powder process, dry, obtain the cell-grade indium hydroxide, indium hydroxide obtains the cell-grade Indium sesquioxide through calcining.
The solid indium of 4N is through fusion, shrend, formation indium flower, again through nitric acid dissolve, obtain indium nitrate solution, then with ammoniacal liquor as precipitation agent, obtain white precipitate by chemical precipitation method, white precipitate is through washing, filtration, drying, powder process, drying and calcining step, obtain cell-grade indium hydroxide and Indium sesquioxide at last, the main chemical reactions formula is as follows:
In+4HNO
3＝In(NO
3)
3+2H
2O+NO↑
In+6HNO
3＝In(NO
3)
3+3H
2O+3NO
2↑
In(NO
3)
3+3NH
3·H
2O＝In(OH)
3↓+3NH
4NO
3
In(OH)
3＝In
2O
3+H
2O
Below provide embodiments of the invention:
Embodiment 1
The indium of 500g4N 160 ℃ of fusions, is obtained the indium flower through shrend, take out and nitric acid reaction, promptly under continuous stirring condition, slowly add concentration (wt%) and be 68% the about 500mL of nitric acid, and add an amount of specific conductivity less than 500us/cm, solubility SiO
2Be lower than 0.02mg/L water, obtain In
3+Concentration is 1.5mol/L indium nitrate solution; The 450mL mass concentration is that 27% ammoniacal liquor and 1350mL water are that preparation in 1: 3 obtains ammonia soln by volume, and its weight concentration is 6.2%.Adding simultaneously under continuous agitation condition has specific conductivity less than 500us/cm, solubility SiO with above-mentioned indium nitrate solution and ammonia soln
2The water that is lower than 0.02mg/L is done in the reactor of end liquid, 90 ℃ of control temperature of reaction system, and process pH is 4.0, terminal point pH is 5.0, reacts 30min after adding again, filters, and obtains white filter cake.Through washing and starching 3 times, drip washing 2 times, gained white filter cake in thermostatic drying chamber in the oven dry in 6 hours of 90 ℃ of dryings; Cooling back powder process, putting into then temperature is set is dry 5 hours of 160 ℃ of thermostatic drying chambers, the packing of cooling back, obtaining outward appearance is the cell-grade indium hydroxide of 1.12 μ m for white, granularity; Above-mentioned indium hydroxide is put into temperature is set is 400 ℃ of calcining furnaces calcining 5 hours, cooling back powder process, and obtaining outward appearance and be faint yellow, granularity is the cell-grade Indium sesquioxide of 1.06 μ m.
Embodiment 2
The indium of 500g4N 180 ℃ of fusions, is obtained the indium flower through shrend, take out and nitric acid reaction, promptly under continuous stirring condition, slowly add concentration (wt%) and be 68% the about 500mL of nitric acid, and add an amount of specific conductivity less than 500us/cm, solubility SiO
2Be lower than 0.02mg/L water, obtain In
3+Concentration is 1.0mol/L indium nitrate solution; The 450mL weight concentration is that 27% ammoniacal liquor and 900mL water are that preparation in 1: 2 obtains ammonia soln by volume, and its weight concentration is 8.3%.Adding simultaneously under continuous agitation condition has specific conductivity less than 500us/cm, solubility SiO with above-mentioned indium nitrate solution and ammonia soln
2The water that is lower than 0.02mg/L is done in the reactor of end liquid, 80 ℃ of control temperature of reaction system, and process pH is 4.5, terminal point pH is 5.2, reacts 40min after adding again, filters, and obtains white filter cake.Through washing and starching 3 times, drip washing 3 times, gained white filter cake in thermostatic drying chamber in the oven dry in 3 hours of 160 ℃ of dryings; Cooling back powder process, putting into then temperature is set is dry 4 hours of 180 ℃ of thermostatic drying chambers, the packing of cooling back, obtaining outward appearance is the cell-grade indium hydroxide of 0.70 μ m for white, granularity; Above-mentioned indium hydroxide is put into temperature is set is 500 ℃ of calcining furnaces calcining 4 hours, cooling back powder process, and obtaining outward appearance and be faint yellow, granularity is the cell-grade Indium sesquioxide of 0.63 μ m.
Embodiment 3
The indium of 500g4N 200 ℃ of fusions, is obtained the indium flower through shrend, take out and nitric acid reaction, promptly under continuous stirring condition, slowly add concentration (wt%) and be 68% the about 500mL of nitric acid, and add an amount of specific conductivity less than 500us/cm, solubility SiO
2Be lower than 0.02mg/L water, obtain In
3+Concentration is 0.5mol/L indium nitrate solution; The 450mL weight concentration is that 27% ammoniacal liquor and 450mL water are that preparation in 1: 1 obtains ammonia soln by volume, and its weight concentration is 12.8%.Adding simultaneously under continuous agitation condition has specific conductivity less than 500us/cm, solubility SiO with above-mentioned indium nitrate solution and ammonia soln
2The water that is lower than 0.02mg/L is done in the reactor of end liquid, 60 ℃ of control temperature of reaction system, and process pH is 5.0, terminal point pH is 6.0, reacts 50min after adding again, filters, and obtains white filter cake.Through washing and starching 2 times, drip washing 3 times, gained white filter cake in thermostatic drying chamber in the oven dry in 4 hours of 120 ℃ of dryings; Cooling back powder process, putting into then temperature is set is dry 3 hours of 200 ℃ of thermostatic drying chambers, the packing of cooling back, obtaining outward appearance is the cell-grade indium hydroxide of 0.82 μ m for white, granularity; Above-mentioned indium hydroxide is put into temperature is set is 600 ℃ of calcining furnaces calcining 3 hours, cooling back powder process, and obtaining outward appearance and be faint yellow, granularity is the cell-grade Indium sesquioxide of 0.75 μ m.
Claims (9)
1. the preparation method of cell-grade indium hydroxide and Indium sesquioxide is a raw material with the smart indium of solid, it is characterized in that following steps:
A, fusion, shrend are made the indium flower with the smart indium fusing of solid, shrend;
B, nitric acid dissolve, the indium flower that steps A is made adds nitric acid dissolve and makes indium nitrate solution;
C, ammoniacal liquor neutralization precipitation, the indium nitrate solution that step B is obtained adds in the ammoniacal liquor and filtration, makes indium hydroxide filter residue and filtrate, the filtrate otherwise processed;
D, drying, powder process, calcining, the indium hydroxide filter residue that step C is obtained adds water washing, filtration, obtains filter residue and filtrate, and the filtrate otherwise processed makes cell-grade hydrogen-oxygen flower indium and Indium sesquioxide after filter residue drying, powder process, the calcining.
2. by the described method of claim 1, it is characterized in that described molten indium temperature is 160～200 ℃, the solvent of described water-quenching water, salpeter solution, ammonia soln is specific conductivity less than 500us/cm, solubility SiO
2Be lower than the water of 0.02mg/L.
3. by the described method of claim 1, the concentration expressed in percentage by weight that it is characterized in that described salpeter solution is 68%, In in the described indium nitrate solution
3+Volumetric molar concentration is 0.5～1.5mol/L.
4. by the described method of claim 1, the concentration expressed in percentage by weight that it is characterized in that described ammoniacal liquor is 8.4～12.8%.
5. by the described method of claim 1, the neutralization reaction that it is characterized in that described indium nitrate solution and ammonia soln be end liquid with water, continue that stirring, pH are 4.0～6.0, temperature of reaction is that 60 ℃～90 ℃, reaction times are to carry out under the condition of 2～4h.
6. by the described method of claim 1, it is characterized in that described washing step is to adopt specific conductivity less than 500us/cm, solubility SiO
2The water slurry that is lower than 0.02mg/L is washed 2～3 times, and drip washing is 2～3 times again.
7. by the described method of claim 1, it is characterized in that described drying, powder process, drying step is that drying temperature was 90 ℃～160 ℃ with the white filter cake after the drip washing in loft drier dry 3～6 hours again; Put into thermostatic drying chamber then dry 3～5 hours, temperature is 160 ℃～200 ℃, and obtaining granularity after the cooling is 0.6～1.2 μ m cell-grade indium hydroxide.
8. by the described method of claim 1, it is characterized in that described calcining step is indium hydroxide to be put into calcining furnace calcined 3～5 hours, temperature is 400～600 ℃, and obtaining granularity after the cooling is 0.6～1.2 μ m cell-grade Indium sesquioxide.
9. by the described method of claim 1, the granularity that it is characterized in that described cell-grade indium hydroxide and Indium sesquioxide is 0.6～1.2 μ m spherical agglomerates.
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| CN104030342A (en) * | 2014-07-04 | 2014-09-10 | 株洲冶炼集团股份有限公司 | Preparation method of indium nitrate and reaction still |
| CN105753040A (en) * | 2016-05-18 | 2016-07-13 | 河北工业大学 | Preparation method of nano In2O3 powder used for acetone gas-sensitive sensor |
| CN105836792A (en) * | 2016-05-27 | 2016-08-10 | 洛阳瑞德材料技术服务有限公司 | Production method for nanometer indium oxide |
| CN105954348A (en) * | 2016-07-19 | 2016-09-21 | 株洲科能新材料有限责任公司 | Analysis and detection method for high purity indium |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179745A (en) * | 1988-01-11 | 1989-07-17 | Mitsubishi Heavy Ind Ltd | Cooler for cement clinker |
| CN1338429A (en) * | 2000-08-16 | 2002-03-06 | 袁福寅 | Preparing process and application of high-purity indium compound |
| WO2007126053A1 (en) * | 2006-04-27 | 2007-11-08 | Mitsui Mining & Smelting Co., Ltd. | Method for producing indium oxide powder, method for producing granulated indium metal, and method for producing indium salt solution |
| CN101214994A (en) * | 2007-12-27 | 2008-07-09 | 昆明理工大学 | Process for preparing nano powder of copper indium oxide |
-
2010
- 2010-12-10 CN CN 201010583755 patent/CN102092781A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01179745A (en) * | 1988-01-11 | 1989-07-17 | Mitsubishi Heavy Ind Ltd | Cooler for cement clinker |
| CN1338429A (en) * | 2000-08-16 | 2002-03-06 | 袁福寅 | Preparing process and application of high-purity indium compound |
| WO2007126053A1 (en) * | 2006-04-27 | 2007-11-08 | Mitsui Mining & Smelting Co., Ltd. | Method for producing indium oxide powder, method for producing granulated indium metal, and method for producing indium salt solution |
| CN101214994A (en) * | 2007-12-27 | 2008-07-09 | 昆明理工大学 | Process for preparing nano powder of copper indium oxide |
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|---|---|---|---|---|
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| CN105753040A (en) * | 2016-05-18 | 2016-07-13 | 河北工业大学 | Preparation method of nano In2O3 powder used for acetone gas-sensitive sensor |
| CN105836792A (en) * | 2016-05-27 | 2016-08-10 | 洛阳瑞德材料技术服务有限公司 | Production method for nanometer indium oxide |
| CN105954348A (en) * | 2016-07-19 | 2016-09-21 | 株洲科能新材料有限责任公司 | Analysis and detection method for high purity indium |
| CN105954348B (en) * | 2016-07-19 | 2018-05-22 | 株洲科能新材料有限责任公司 | A kind of Analysis of High-Purity Indium detection method |
| CN107460501B (en) * | 2017-08-30 | 2019-07-30 | 河南豫光锌业有限公司 | A kind of preparation method of indium industry electrolysis sulfuric acid solution of indium used |
| CN107460501A (en) * | 2017-08-30 | 2017-12-12 | 河南豫光锌业有限公司 | A kind of compound method of indium industry electrolysis sulfuric acid solution of indium used |
| CN107986322A (en) * | 2017-12-27 | 2018-05-04 | 清远先导材料有限公司 | The preparation method of nitric acid solution of indium |
| CN108793229A (en) * | 2018-08-22 | 2018-11-13 | 先导薄膜材料（广东）有限公司 | The preparation method of indium hydroxide |
| CN109504858A (en) * | 2018-12-18 | 2019-03-22 | 广东先导稀材股份有限公司 | Method for preparing indium hydroxide by using ITO waste material |
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| CN109824081B (en) * | 2019-03-27 | 2020-06-16 | 云南锡业集团（控股）有限责任公司研发中心 | Method for producing nano indium oxide powder |
| CN113277548A (en) * | 2021-05-21 | 2021-08-20 | 先导薄膜材料有限公司 | Battery-grade indium hydroxide and preparation method and application thereof |
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