CN102088007A - 印刷线路板芯片倒装倒t型或矩形锁定孔散热块封装结构 - Google Patents

印刷线路板芯片倒装倒t型或矩形锁定孔散热块封装结构 Download PDF

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CN102088007A
CN102088007A CN2010105587517A CN201010558751A CN102088007A CN 102088007 A CN102088007 A CN 102088007A CN 2010105587517 A CN2010105587517 A CN 2010105587517A CN 201010558751 A CN201010558751 A CN 201010558751A CN 102088007 A CN102088007 A CN 102088007A
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radiating block
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王新潮
梁志忠
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

本发明涉及一种印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构，包含有芯片(3)、芯片下方的所承载的单层或多层印刷线路板(9)、芯片到单层或多层印刷线路板的信号互连用的金属凸块(10)、芯片与所述单层或多层印刷线路板之间的导电或不导电的导热粘结物质Ⅰ(2)和塑封体(8)，其特征在于在所述芯片(3)上方设置有散热块(7)，该散热块(7)带有锁定孔(7.1)，该散热块(7)与所述芯片(3)之间嵌置有导电或不导电的导热粘结物质Ⅱ(6)；该散热块(7)呈倒置的“T”型或矩型结构。本发明通过在芯片上方增置散热块，来担任高热量的散热的功能，能够提供散热的能力强，使芯片的热量能快速的传导到封装体外界。

Description

印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构
技术领域
本发明涉及一种印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构。属于半导体封装技术领域。
背景技术
传统的芯片封装形式的散热方式，主要是采用了芯片下方的金属基岛作为散热传导工具或途径，而这种传统封装方式的散热传导存在以下的不足点：
1、金属基岛体积太小
金属基岛在传统封装形式中，为了追求封装体的可靠性安全，几乎都采用了金属基岛埋入在封装体内，而在有限的封装体内，同时要埋入金属基岛及信号、电源传导用的金属内脚（如图1及图2所示），所以金属基岛的有效面积与体积就显得非常的小，而同时金属基岛还要来担任高热量的散热的功能，就会显得更为的不足了。
2、埋入型金属基岛（如图1及图2所示）
金属基岛在传统封装形式中，为了追求封装体的可靠性安全，几乎都采用了金属基岛埋入在封装体内，而金属基岛是依靠左右或是四个角落细细的支撑杆来固定或支撑金属基岛，也因为这细细的支撑杆的特性，导致了金属基岛从芯片上所吸收到的热量，无法快速的从细细的支撑杆传导出来，所以芯片的热量无法或快速的传导到封装体外界，导致了芯片的寿命快速老化甚至烧伤或烧坏。
3、金属基岛露出型（如图3及图4所示）
虽然金属基岛是露出的，可以提供比埋入型的散热功能还要好的散热能力，但是因为金属基岛的体积及面积在封装体内还是非常的小，所以能够提供散热的能力，还是非常有限。
发明内容
本发明的目的在于克服上述不足，提供一种能够提供散热的能力强的印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构。
本发明的目的是这样实现的：一种印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构，包含有芯片、芯片下方的所承载的单层或多层印刷线路板、芯片到单层或多层印刷线路板的信号互连用的金属凸块、芯片与所述单层或多层印刷线路板之间的导电或不导电的导热粘结物质Ⅰ和塑封体，在所述芯片上方设置有散热块，该散热块带有锁定孔，该散热块与所述芯片之间嵌置有导电或不导电的导热粘结物质Ⅱ；该散热块呈倒置的“T”型或矩型结构。 
本发明的有益效果是：
本发明通过在芯片上方增置散热块，来担任高热量的散热的功能，能够提供散热的能力强，使芯片的热量能快速的传导到封装体外界。可以应用在一般的封装形式的封装体及封装工艺上使其成为高或是超高散热 (High Thermal or Super High Thermal)能力，如FBP可以成为SHT-FBP / QFN可以成为SHT-QFN / BGA可以成为 SHT-BGA / CSP可以成为SHT-CSP ……。避免了芯片的寿命快速老化甚至烧伤或烧坏。
附图说明
图1为以往金属基岛埋入型芯片封装结构示意图。
图2为图1的俯视图。
图3为以往金属基岛露出型芯片封装结构示意图。
图4为图3的俯视图。
图5为本发明印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构实施例1示意图。
图6为本发明印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构实施例2示意图。
图中附图标记：
导电或不导电的导热粘结物质Ⅰ2、芯片3、导电或不导电的导热粘结物质Ⅱ6、散热块7、锁定孔7.1、塑封体8、印刷线路板9、金属凸块10。
具体实施方式
实施例1：
参见图5，图5为本发明印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构实施例1示意图。由图5可以看出，本发明印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构，包含有芯片3、芯片下方的所承载的单层或多层印刷线路板9、芯片到单层或多层印刷线路板的信号互连用的金属凸块10、芯片与所述单层或多层印刷线路板之间的导电或不导电的导热粘结物质Ⅰ2和塑封体8，在所述芯片3上方设置有散热块7，该散热块7带有锁定孔7.1，该散热块7与所述芯片3之间嵌置有导电或不导电的导热粘结物质Ⅱ6；该散热块7呈倒置的“T”型结构。
所述散热块7的材质可以是铜、铝、陶瓷或合金等。
所述金属凸块10的材质可以是锡、金或合金等。
实施例2：
实施例2与实施例1的不同之处仅在于：所述散热块7呈矩形结构，如图6。

Claims (3)

1. 一种印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构，包含有芯片(3)、芯片下方的所承载的单层或多层印刷线路板(9)、芯片到单层或多层印刷线路板的信号互连用的金属凸块(10)、芯片与所述单层或多层印刷线路板之间的导电或不导电的导热粘结物质Ⅰ(2)和塑封体(8)，其特征在于在所述芯片(3)上方设置有散热块(7)，该散热块(7)带有锁定孔(7.1)，该散热块(7)与所述芯片(3)之间嵌置有导电或不导电的导热粘结物质Ⅱ(6)；该散热块(7)呈倒置的“T”型或矩型结构。
2.根据权利要求1所述的一种印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构，其特征在于所述散热块(7)的材质是铜、铝、陶瓷或合金。
3.根据权利要求1所述的一种印刷线路板芯片倒装倒T型或矩形锁定孔散热块封装结构，其特征在于所述金属凸块(10)的材质是锡、金或合金。
CN2010105587517A 2010-01-29 2010-11-25 印刷线路板芯片倒装倒t型或矩形锁定孔散热块封装结构 Pending CN102088007A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299544A (ja) * 1992-04-20 1993-11-12 Hitachi Ltd 半導体装置
US5814536A (en) * 1995-12-27 1998-09-29 Lsi Logic Corporation Method of manufacturing powdered metal heat sinks having increased surface area
CN1355564A (zh) * 2000-11-24 2002-06-26 矽品精密工业股份有限公司 半导体封装件及其制造方法
CN1630073A (zh) * 2003-12-19 2005-06-22 威宇科技测试封装有限公司 芯片球栅阵列封装结构
CN101221944A (zh) * 2007-01-09 2008-07-16 矽品精密工业股份有限公司 散热型半导体封装件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299544A (ja) * 1992-04-20 1993-11-12 Hitachi Ltd 半導体装置
US5814536A (en) * 1995-12-27 1998-09-29 Lsi Logic Corporation Method of manufacturing powdered metal heat sinks having increased surface area
CN1355564A (zh) * 2000-11-24 2002-06-26 矽品精密工业股份有限公司 半导体封装件及其制造方法
CN1630073A (zh) * 2003-12-19 2005-06-22 威宇科技测试封装有限公司 芯片球栅阵列封装结构
CN101221944A (zh) * 2007-01-09 2008-07-16 矽品精密工业股份有限公司 散热型半导体封装件

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Application publication date: 20110608