CN102088003B - Nonlinear left-handed transmission-line frequency multiplier based on planar technology and preparation method thereof - Google Patents
Nonlinear left-handed transmission-line frequency multiplier based on planar technology and preparation method thereof Download PDFInfo
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- CN102088003B CN102088003B CN200910310975.3A CN200910310975A CN102088003B CN 102088003 B CN102088003 B CN 102088003B CN 200910310975 A CN200910310975 A CN 200910310975A CN 102088003 B CN102088003 B CN 102088003B
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Abstract
The invention relates to a nonlinear left-handed transmission-line frequency multiplier based on a planar technology and a preparation method thereof, which belongs to the technical field of microwave circuits. The preparation method comprises the following steps of: preparing a Shottky variable capacitance diode on a semi-insulating substrate, wherein the Shottky variable capacitance diode comprises a heavily doped N-type layer, an N-type layer, a lower electrode and an upper electrode, the N-type layer forms a mesa structure on the heavily doped N-type layer, and the heavily doped N-type layer forms a mesa structure on the semi-insulating substrate; forming a lower electrode of a capacitor and a buried layer lead wire of an inducer on the semi-insulating substrate; depositing to form a dielectric layer; etching the dielectric layer at the upper electrode, the lower electrode, the lower electrode of the capacitor and the buried layer lead wire of the inducer to form a window; and forming the lower electrode of the capacitor, a spiral inductor and a connecting wire. The preparation method of the nonlinear left-handed transmission-line frequency multiplier based on the planar technology adopts the planar technology, is easy to be performed and operated and easy for monolithic integration and has high integration level, good circuit stability and high circuit reliability.
Description
Technical field
The present invention relates to a kind of multiplier of left-hand nonlinear transmission line and preparation method thereof, relate in particular to a kind of multiplier of left-hand nonlinear transmission line based on planar technique and preparation method thereof, belong to technical field of microwave circuits.
Background technology
Multiplier of left-hand nonlinear transmission line is a kind of circuit structure that passes through the non-linear generation times yupin effect of the passive components such as variable capacitance, inductance.This structure is by single or several transmission line cell formations, and each unit is made of variable capacitance and the shunt inductance of series connection.Corresponding with it, traditional nonlinear transmission line unit is made of series inductance and variable capacitance in parallel.Than traditional nonlinear transmission line, the nonlinear transmission line operating frequency of this left hand structure is higher, is suitable for microwave and millimeter wave, even the submillimeter wave field.
The manufacture method of traditional left-hand nonlinear transmission line is on dielectric substrate discrete component to be interconnected by wire or bonding line, and need the ancillary equipment such as biasing circuit, input waveguide and output waveguide.The nonlinear transmission line complex structure of realizing by this method can not batch machining, has seriously restricted the integrated level of left-hand nonlinear transmission line, has improved production cost.
Summary of the invention
The present invention is directed to the nonlinear transmission line complex structure by the manufacture method realization of traditional multiplier of left-hand nonlinear transmission line, can not batch machining, seriously restricted the integrated level of left-hand nonlinear transmission line, improved the deficiency of production cost, a kind of multiplier of left-hand nonlinear transmission line based on planar technique and preparation method thereof is provided.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of manufacture method of the multiplier of left-hand nonlinear transmission line based on planar technique may further comprise the steps:
Step 10: make Schottky variable capacitance diode at SI-substrate, described Schottky variable capacitance diode comprises the heavy doping N-type layer that is arranged on the described SI-substrate, be arranged at N-type layer and bottom electrode on the described heavy doping N-type layer, be arranged at the top electrode on the described N-type layer, described N-type layer forms mesa structure at described heavy doping N-type layer, and described heavy doping N-type layer forms mesa structure at described SI-substrate;
Step 20: on described SI-substrate, form the bottom electrode of electric capacity and the buried regions lead-in wire of inductance by evaporated metal;
Step 30: deposit forms dielectric layer on the SI-substrate behind the buried regions lead-in wire of the bottom electrode that forms electric capacity and inductance;
Step 40: the dielectric layer at the bottom electrode by the described Schottky variable capacitance diode top electrode of etching, Schottky variable capacitance diode bottom electrode, electric capacity and the buried regions lead-in wire place of inductance forms window;
Step 50: the top electrode, spiral inductance and the connecting line that form electric capacity by plated metal.
Further, described step 10 specifically comprises:
Step 10a: on SI-substrate, form heavy doping N-type layer by epitaxial growth;
Step 10b: on described heavy doping N-type layer, form the N-type layer by epitaxial growth;
Step 10c: reduce the area of the N-type layer on described heavy doping N-type layer by etching, so that described N-type layer forms mesa structure at described heavy doping N-type layer;
Step 10d: on described heavy doping N-type layer and N-type layer, form bottom electrode and top electrode by evaporated metal;
Step 10e: reduce the area of the heavy doping N-type layer on described SI-substrate by etching, so that described heavy doping N-type layer forms mesa structure at described SI-substrate, thereby make Schottky variable capacitance diode.
Further, the lithographic method that adopts among described step 10c and the step 10e is wet etching.
Further, the corrosive liquid of described wet etching employing is H
3PO
4/ H
2O
2/ H
2The O mixed solution, wherein, H
3PO
4, H
2O
2And H
2The volume ratio of O is 2: 3: 30.
Further, be specially in the step that forms bottom electrode by evaporation on the described heavy doping N-type layer among the described step 10d: successively evaporated metal Ni, Ge, Au, Ge, Ni and Au on described heavy doping N-type layer, thus form six layers of metal structure of Ni/Ge/Au/Ge/Ni/Au.
Further, be specially in the step that forms top electrode by evaporation on the described N-type layer among the described step 10d: successively evaporated metal Ti, Pt and Au on described N-type layer, thus form Ti/Pt/Au three-layer metal structure.
Further, described step 20 is specially: successively evaporated metal Ti and Au on described SI-substrate form the bottom electrode of electric capacity and the buried regions lead-in wire of inductance.
Further, the dielectric layer in the described step 30 is Si
3N
4Dielectric layer.
Further, the lithographic method that adopts in the described step 40 is dry etching.
The present invention also provides a kind of technical scheme that solves the problems of the technologies described above as follows: a kind of multiplier of left-hand nonlinear transmission line based on planar technique is by at least one transmission line cell formation, each transmission line unit comprises the spiral inductance that Schottky variable capacitance diode that series connection links to each other and parallel connection link to each other, the input port of each transmission line unit and the output port capacitance of respectively connecting.
The invention has the beneficial effects as follows:
1, the present invention is based on the manufacture method of the multiplier of left-hand nonlinear transmission line of planar technique, adopt planar technique, easy to implement, simple to operate.
2, the present invention is based on the manufacture method of the multiplier of left-hand nonlinear transmission line of planar technique, be easy to monolithic integrated, and integrated level is high.
3, the present invention is based on the manufacture method of the multiplier of left-hand nonlinear transmission line of planar technique, circuit stability is good, and reliability is high.
Description of drawings
Fig. 1 is that the embodiment of the invention is based on the manufacture method flow chart of the multiplier of left-hand nonlinear transmission line of planar technique;
Fig. 2 is the schematic cross-section of the multiplier of left-hand nonlinear transmission line that step 10a is corresponding among Fig. 1;
Fig. 3 is the schematic cross-section of the multiplier of left-hand nonlinear transmission line that step 10b is corresponding among Fig. 1;
Fig. 4 is the schematic cross-section of the multiplier of left-hand nonlinear transmission line that step 10c is corresponding among Fig. 1;
Fig. 5 is the schematic cross-section of the multiplier of left-hand nonlinear transmission line that step 10d is corresponding among Fig. 1;
Fig. 6 is the schematic cross-section of the multiplier of left-hand nonlinear transmission line that step 10e is corresponding among Fig. 1;
Fig. 7 is the schematic cross-section of the multiplier of left-hand nonlinear transmission line of step 20 correspondence among Fig. 1;
Fig. 8 is the schematic cross-section of the multiplier of left-hand nonlinear transmission line of step 30 correspondence among Fig. 1;
Fig. 9 is the schematic cross-section of the multiplier of left-hand nonlinear transmission line of step 40 correspondence among Fig. 1;
Figure 10 is the schematic cross-section of the multiplier of left-hand nonlinear transmission line of step 50 correspondence among Fig. 1;
Figure 11 is that the embodiment of the invention is based on the structural representation of the multiplier of left-hand nonlinear transmission line of planar technique.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used for explaining the present invention, is not be used to limiting scope of the present invention.
Referring to Fig. 1 to Figure 10, the embodiment of the invention provides a kind of manufacture method of the multiplier of left-hand nonlinear transmission line based on planar technique, and described manufacture method may further comprise the steps:
Step 10: make Schottky variable capacitance diode 113 at SI-substrate 101, described Schottky variable capacitance diode 113 comprises the heavy doping N-type layer 102 that is arranged on the described SI-substrate 101, be arranged at N-type layer 103 and bottom electrode 105 on the described heavy doping N-type layer 102, be arranged at the top electrode 104 on the described N-type layer 103, described N-type layer 103 forms mesa structure at described heavy doping N-type layer 102, and described heavy doping N-type layer 102 forms mesa structure at described SI-substrate 101.
Described step 10 specifically comprises:
Step 10a: on SI-substrate 101, form heavy doping N-type layer 102 by epitaxial growth.
Step 10b: on described heavy doping N-type layer 102, form N-type layer 103 by epitaxial growth.
Step 10c: reduce the area of the N-type layer 103 on described heavy doping N-type layer 102 by etching, so that described N-type layer 103 forms mesa structure at described heavy doping N-type layer 102.
The lithographic method that adopts is wet etching.The corrosive liquid that described wet etching adopts is H
3PO
4/ H
2O
2/ H
2The O mixed solution.Described H
3PO
4/ H
2O
2/ H
2H in the O mixed solution
3PO
4, H
2O
2And H
2The volume ratio of O is 2: 3: 30.
Step 10d: on described heavy doping N-type layer 102 and N-type layer 103, form bottom electrode 105 and top electrode 104 by evaporated metal.
Be specially in the step that forms bottom electrode 105 by evaporation on the described heavy doping N-type layer 102: successively evaporated metal Ni, Ge, Au, Ge, Ni and Au on described heavy doping N-type layer 102, thereby form six layers of metal structure of Ni/Ge/Au/Ge/Ni/Au, wherein, the ratio Ni/Ge/Au/Ge/Ni/Au=4 of the thickness of Ni, Ge, Au, Ge, Ni and six layers of metal of Au: 4: 66: 8: 3: 220.In the present embodiment, the thickness of described Ni, Ge, Au, Ge, Ni and six layers of metal of Au is followed successively by 40 à, 40 à, 660 à, 80 à, 30 à and 2200 à.
Be specially in the step that forms top electrode 104 by evaporation on the described N-type layer 103: successively evaporated metal Ti, Pt and Au on described N-type layer 103, thereby form Ti/Pt/Au three-layer metal structure, wherein, the ratio Ti/Pt/Au=1 of the thickness of Ti, Pt and Au three-layer metal: 1: 12.In the present embodiment, the thickness of described Ti, Pt and Au three-layer metal is followed successively by 250 à, 250 à and 3000 à.
Step 10e: reduce the area of the heavy doping N-type layer 102 on described SI-substrate 101 by etching, so that described heavy doping N-type layer 102 forms mesa structure at described SI-substrate 101, thereby make Schottky variable capacitance diode 113.
The lithographic method that adopts is wet etching.The corrosive liquid that described wet etching adopts is H
3PO
4/ H
2O
2/ H
2The O mixed solution.Described H
3PO
4/ H
2O
2/ H
2H in the O mixed solution
3PO
4, H
2O
2And H
2The volume ratio of O is 2: 3: 30.
Step 20: on described SI-substrate 101, form the bottom electrode 106 of electric capacity and the buried regions lead-in wire 107 of inductance by evaporated metal.
Successively evaporated metal Ti and Au on described SI-substrate 101, thus the Ti/Au double-layer metal structure formed, namely form the bottom electrode 103 of electric capacity and the buried regions lead-in wire 107 of inductance.
Step 30: deposit forms dielectric layer 108 on the SI-substrate 101 behind the buried regions lead-in wire 107 of the bottom electrode 106 that forms electric capacity and inductance.
Described dielectric layer 108 is Si
3N
4Dielectric layer.
Step 40: the dielectric layer 108 at the bottom electrode by the described Schottky variable capacitance diode top electrode 104 of etching, Schottky variable capacitance diode bottom electrode 105, electric capacity and the buried regions lead-in wire place of inductance forms window 109.
The lithographic method that adopts is dry etching.
Step 50: the top electrode 110, spiral inductance 111 and the connecting line 112 that form electric capacity by plated metal.
Thereby form top electrode 110, spiral inductance 111 and the connecting line 112 of electric capacity by plated metal Au.
Figure 11 is that the embodiment of the invention is based on the structural representation of the multiplier of left-hand nonlinear transmission line of planar technique.As shown in figure 11, described frequency multiplier is by at least one transmission line cell formation, each transmission line unit comprises the Schottky variable capacitance diode 113 and the spiral inductance 111 that links to each other in parallel that series connection links to each other, in order to suppress direct current signal, improve harmonic generation efficiency, the input port of each transmission line unit and the output port capacitance of respectively connecting.
The manufacture method based on the multiplier of left-hand nonlinear transmission line of planar technique that the embodiment of the invention provides adopts planar technique, and is easy to implement, simple to operate; Be easy to monolithic integrated, and integrated level is high; Circuit stability is good, and reliability is high.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the manufacture method based on the multiplier of left-hand nonlinear transmission line of planar technique is characterized in that, described manufacture method may further comprise the steps:
Step 10: make Schottky variable capacitance diode (113) at SI-substrate (101), described Schottky variable capacitance diode (113) comprises the heavy doping N-type layer (102) that is arranged on the described SI-substrate (101), be arranged at N-type layer (103) and bottom electrode (105) on the described heavy doping N-type layer (102), be arranged at the top electrode (104) on the described N-type layer (103), described N-type layer (103) forms mesa structure at described heavy doping N-type layer (102), and described heavy doping N-type layer (102) forms mesa structure at described SI-substrate (101);
Step 20: upper by the bottom electrode (106) of evaporated metal formation electric capacity and the buried regions lead-in wire (107) of inductance at described SI-substrate (101);
Step 30: the upper deposit of the SI-substrate (101) behind the buried regions lead-in wire (107) of the bottom electrode (106) that forms electric capacity and inductance forms dielectric layer (108);
Step 40: the dielectric layer (108) at the bottom electrode by the described Schottky variable capacitance diode top electrode of etching (104), Schottky variable capacitance diode bottom electrode (105), electric capacity and the buried regions lead-in wire place of inductance forms window (109);
Step 50: the top electrode (110), spiral inductance (111) and the connecting line (112) that form electric capacity by plated metal.
2. the manufacture method of the multiplier of left-hand nonlinear transmission line based on planar technique according to claim 1 is characterized in that, described step 10 specifically comprises:
Step 10a: upper by epitaxial growth formation heavy doping N-type layer (102) at SI-substrate (101);
Step 10b: upper by epitaxial growth formation N-type layer (103) at described heavy doping N-type layer (102);
Step 10c: reduce the area of the N-type layer (103) on described heavy doping N-type layer (102) by etching, so that described N-type layer (103) forms mesa structure at described heavy doping N-type layer (102);
Step 10d: upper by evaporated metal formation bottom electrode (105) and top electrode (104) at described heavy doping N-type layer (102) and N-type layer (103);
Step 10e: the area that reduces the heavy doping N-type layer (102) on described SI-substrate (101) by etching, so that described heavy doping N-type layer (102) forms mesa structure at described SI-substrate (101), thereby make Schottky variable capacitance diode (113).
3. the manufacture method of the multiplier of left-hand nonlinear transmission line based on planar technique according to claim 2 is characterized in that, the lithographic method that adopts among described step 10c and the step 10e is wet etching.
4. the manufacture method of the multiplier of left-hand nonlinear transmission line based on planar technique according to claim 3 is characterized in that, the corrosive liquid that described wet etching adopts is H
3PO
4/ H
2O
2/ H
2The O mixed solution, wherein, H
3PO
4, H
2O
2And H
2The volume ratio of O is 2:3:30.
5. the manufacture method of the multiplier of left-hand nonlinear transmission line based on planar technique according to claim 2, it is characterized in that, be specially by the step that evaporation forms bottom electrode (105) at described heavy doping N-type layer (102) among the described step 10d: successively evaporated metal Ni, Ge, Au, Ge, Ni and Au on described heavy doping N-type layer (102), thus form six layers of metal structure of Ni/Ge/Au/Ge/Ni/Au.
6. the manufacture method of the multiplier of left-hand nonlinear transmission line based on planar technique according to claim 2, it is characterized in that, be specially by the step that evaporation forms top electrode (104) at described N-type layer (103) among the described step 10d: successively evaporated metal Ti, Pt and Au on described N-type layer (103), thus form Ti/Pt/Au three-layer metal structure.
7. the manufacture method of the multiplier of left-hand nonlinear transmission line based on planar technique according to claim 1, it is characterized in that, described step 20 is specially: successively evaporated metal Ti and Au on described SI-substrate (101), the buried regions that forms the bottom electrode (106) of electric capacity and inductance go between (107).
8. the manufacture method of the multiplier of left-hand nonlinear transmission line based on planar technique according to claim 1 is characterized in that, the dielectric layer in the described step 30 (108) is Si
3N
4Dielectric layer.
9. the manufacture method of the multiplier of left-hand nonlinear transmission line based on planar technique according to claim 1 is characterized in that, the lithographic method that adopts in the described step 40 is dry etching.
10. multiplier of left-hand nonlinear transmission line based on planar technique, it is characterized in that, described frequency multiplier is by at least one transmission line cell formation, each transmission line unit comprises the spiral inductance (111) that Schottky variable capacitance diode (113) that series connection links to each other and parallel connection link to each other, the input port of each transmission line unit and the output port capacitance of respectively connecting.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256996A (en) * | 1987-10-06 | 1993-10-26 | The Board Of Trustees Of The Leland Stanford, Junior University | Integrated coplanar strip nonlinear transmission line |
| CN101405914A (en) * | 2006-03-23 | 2009-04-08 | 英特尔公司 | Active nonlinear transmission line |
-
2009
- 2009-12-07 CN CN200910310975.3A patent/CN102088003B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256996A (en) * | 1987-10-06 | 1993-10-26 | The Board Of Trustees Of The Leland Stanford, Junior University | Integrated coplanar strip nonlinear transmission line |
| CN101405914A (en) * | 2006-03-23 | 2009-04-08 | 英特尔公司 | Active nonlinear transmission line |
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Effective date of registration: 20220909 Address after: Room 108, floor 1, building 4, No. 2 dacuodeng Hutong, Dongcheng District, Beijing 100010 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Address before: Beijing city Chaoyang District North Tucheng Road 100029 Beijing City No. 3 Institute of Microelectronics Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |