CN102086514A - PECVD (plasma enhanced chemical vapor deposition) system - Google Patents
PECVD (plasma enhanced chemical vapor deposition) system Download PDFInfo
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- CN102086514A CN102086514A CN2009102414782A CN200910241478A CN102086514A CN 102086514 A CN102086514 A CN 102086514A CN 2009102414782 A CN2009102414782 A CN 2009102414782A CN 200910241478 A CN200910241478 A CN 200910241478A CN 102086514 A CN102086514 A CN 102086514A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a PECVD (plasma enhanced chemical vapor deposition) system which comprises a process module and is characterized in that: the process module is provided with a cavity, wherein a plurality of process chambers (1) are arranged in the cavity; the cavity of the process module is connected with a first vacuum system; a reaction cavity of each process chamber (1) is connected with a second vacuum system; and the first vacuum system and the second vacuum system are independent of each other and can be independently adjusted. The PEVCD system can effectively protect the process chambers (1) from pollution and ensure the environmental cleanness of the process chambers (1).
Description
Technical field
The present invention relates to technical field of vacuum plating, particularly a kind of PECVD system.
Background technology
PECVD (plasma-enhanced chemical vapor deposition) is the abbreviation of plasma enhanced chemical vapor deposition technology, its principle is to utilize low-temperature plasma to make energy source, sample places on the negative electrode of glow discharge under the subatmospheric, utilize glow discharge (or adding heating element in addition) to make sample be warmed up to predetermined temperature, feed an amount of reactant gases then, gas forms solid film through series of chemical and plasma reaction at sample surfaces.
Please refer to Fig. 1, Fig. 1 is the structural representation of a kind of typical PECVD system.
A kind of typical PECVD system comprise shower plate 1 ' and supporting structure 2 ', shower plate 1 ' and supporting structure 2 ' between be arranged alternately exciting electrode plate 3 ' and grounding electrode plate 4 ', be in the sidewall of outermost grounding electrode plate 4 ' formation plasma case.
As shown in Figure 1, exciting electrode plate 3 ' and grounding electrode plate 4 ' both sides be installed with substrate 5 ', reactant gases from shower plate 1 ' inlet mouth 1 ' 1 enter, and by many rows aperture 1 ' 2 enter exciting electrode plate 3 ' and grounding electrode plate 4 ' between reaction chamber 6 ' in, reactant gases excited be plasma body, thereby at substrate 5 ' surface deposition film, reacted gas from supporting structure 2 ' on non-limiting hole 2 ' 1 extract out.
Above-mentioned PECVD of the prior art system has following shortcoming:
The first, be used for 5 ' time of large-area substrates, air-flow is bled from opposite side from a side air inlet, thereby the homogeneity of air-flow and bad;
The second, radio frequency inserts and can adopt multiple spot to insert, and inserts radio frequency but the multiple spot access can only be one or both sides, and the homogeneity of the radio frequency on entire electrode plate surface is still waiting to improve;
The 3rd, mounting substrate 5 ' and unload 5 ' time of carried base board difficulty relatively;
The 4th, impurity in the external environment or particle easily enter reaction chamber 6 between the battery lead plate ' in, pollute reaction chamber 6 ' environment.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of PECVD system, and this PECVD system can prevent effectively that chamber from being polluted, and guarantees the degree of cleaning of chamber environment.
For solving the problems of the technologies described above, the invention provides a kind of PECVD system, comprise technical module; Described technical module has cavity, is provided with a plurality of chambers in the described cavity; The cavity of described technical module is connected with first vacuum system, and the reaction cavity of each described chamber is connected with second vacuum system; Described first vacuum system and described second vacuum system are separate and can regulate separately.
Further, in the described chamber electric pole plate and lower electrode plate are installed; Whole described electric pole plate is distributed with a plurality of first gas orifices, and the peripheral part of described electric pole plate is provided with second gas orifice; The diameter of described second gas orifice is greater than the diameter of described first gas orifice.
Further, an end face in the upper surface of the lower surface of described electric pole plate and described lower electrode plate is the depression end face.
Further, the upper surface of described lower electrode plate is the depression end face; Be filled with dielectric material in the depressed part that described depression end face forms.
Further, also comprise chip-loading apparatus; Described chip-loading apparatus is sent into substrate in the reaction cavity of each described chamber by the family of power and influence, perhaps substrate is taken out from described reaction cavity.
Further, described chip-loading apparatus comprises go-cart, described go-cart is provided with a plurality of and each corresponding go-cart arm in described family of power and influence position, and described substrate is sent in the reaction cavity of described chamber by described go-cart arm, perhaps takes out in described reaction cavity.
Further, shared same described second vacuum system of each described chamber.
Further, the shared same air-channel system of each described chamber.
Further, each described chamber connects an excitation system respectively.
Further, the outer wall of each described chamber is provided with thermoscreen.
On the basis of existing technology, the technical module of PECVD provided by the present invention system has cavity, is provided with a plurality of chambers in the described cavity; The cavity of described technical module is connected with first vacuum system, and the reaction cavity of each described chamber is connected with second vacuum system; Described first vacuum system and described second vacuum system are separate and can regulate separately.
When adopting the present invention to carry out technology, because the cavity of technical module and the reaction cavity of chamber are connected with independent vacuum system respectively, thereby chamber is when carrying out technology, can be set to greater than the intravital pressure in technical module chamber by the intravital operation pressure of chamber reaction chamber, such as being set to 1Torr by the intravital operation pressure of chamber reaction chamber, the intravital pressure in technical module chamber is made as 0.1Torr, therefore can avoids the interior impurity of technical module and the environment of particle contamination chamber reaction cavity.
Description of drawings
Fig. 1 is the structural representation of a kind of typical PECVD system;
Fig. 2 is the structural representation of PECVD system in an embodiment of the present invention;
Fig. 3 is the structural representation of the chamber of PECVD system in an embodiment of the present invention;
Fig. 4 is the structural representation of the electric pole plate of chamber in an embodiment of the present invention;
Fig. 5 is the structural representation of the lower electrode plate of chamber in an embodiment of the present invention;
Fig. 6 is the structural representation of the go-cart of PECVD system in an embodiment of the present invention.
Embodiment
Core of the present invention provides a kind of PECVD system, and this PECVD system can prevent effectively that chamber from being polluted, and guarantees the degree of cleaning of chamber environment.
In order to make those skilled in the art understand technical scheme of the present invention better, the present invention is described in further detail below in conjunction with the drawings and specific embodiments.
Please refer to Fig. 2, Fig. 2 is the structural representation of PECVD system in an embodiment of the present invention.
In first kind of embodiment, PECVD provided by the present invention system comprises technical module.Described technical module has the cavity of the relative closure that is surrounded by housing, and the suitable part of described housing can be opened in case of necessity, and described cavity is inside and outside to be communicated with thereby make.The main effect of described technical module is to form the space (being described cavity) with suitable vacuum tightness, in order to hold the chamber that hereinafter is about to description, described chamber is operated under the appropriate vacuum.Obviously, except vacuum system, described technical module should have the conventional facility of other necessity, so that its inner chamber is connected with air-channel system, vacuum system and excitation system etc. smoothly.Those skilled in the art can be provided with above-mentioned facility according to the actual requirements, and concrete set-up mode belongs to the routine techniques means and is not the emphasis of this paper, therefore repeats no more.
Be provided with a plurality of chambers 1 in the described cavity, each chamber 1 is positioned on the intravital chamber support (not shown) of technical module chamber.
As shown in Figure 2, each chamber 1 is vertically arranged in technical module and is provided with, it is to be noted, this specification sheets does not limit for the aligning method of each chamber 1, such as carrying out the corresponding structure adjustment, be provided with so that make each chamber 1 in technical module, horizontally to be provided with or otherwise arrange to technical module.
The cavity of described technical module is connected with first vacuum system, and the reaction cavity of each chamber 1 is connected with second vacuum system; Described first vacuum system and described second vacuum system are separate.At this, it is pointed out that the number of second vacuum system can be one, this moment, all chambers 1 adopted a cover vacuum system to control; Certainly, the number of second vacuum system also can be for a plurality of, and number equates that with the number of chamber 1 this moment, each chamber 1 connected a vacuum system respectively.
When adopting the present invention to carry out technology, because the cavity of technical module and the reaction cavity of chamber 1 are connected with independent vacuum system respectively, thereby chamber 1 is when carrying out technology, can be set to greater than the intravital pressure in technical module chamber by the intravital operation pressure of chamber 1 reaction chamber, such as being set to 1Torr by the intravital operation pressure of chamber 1 reaction chamber, the intravital pressure in technical module chamber is made as 0.1Torr, therefore can avoids the interior impurity of technical module and the environment of particle contamination chamber 1 reaction cavity.
Please refer to Fig. 3 and Fig. 4, Fig. 3 is the structural representation of the chamber of PECVD system in an embodiment of the present invention; Fig. 4 is the structural representation of the electric pole plate of chamber in an embodiment of the present invention.
In second kind of embodiment, as shown in Figure 3, be provided with electric pole plate 11 and lower electrode plate 12 in each chamber 1, and the top of electric pole plate 11 also is provided with even flow plate 13, even flow plate 13 and electric pole plate 11 are porous plate, wherein the bore dia of even flow plate 13 is greater than the bore dia of electric pole plate 11, and the quantity in the hole of electric pole plate 11 is more than the quantity in the hole of even flow plate 13.
As shown in Figure 4, the diameter of electric pole plate 11 gas orifices can be identical, also can be inequality; For the homogeneity that guarantees air-flow and the homogeneity of plasma body, the diameter of general gas orifice is inequality, and is regular distribution.
Particularly, the first less gas orifice 111 of diameter can be set on electric pole plate 11, the second bigger gas orifice 112 of diameter is set on the peripheral part of electric pole plate 11; First gas orifice 111 can be uniformly distributed on the surface of whole electric pole plate 11 substantially, and second gas orifice 112 is arranged at the peripheral part of electric pole plate 11, and is positioned among 111 encirclements of first gas orifice.
Because the influence of standing wave effect, make the make progress density height of region intermediate plasma body of reaction cavity internal diameter, the density of peripheral regions plasma body is low; In the present embodiment, each gas orifice on the electric pole plate 11 all is equivalent to a hollow electrode, thereby can strengthen the ionization level of regional area gas, because the diameter of second gas orifice 112 that is arranged at electric pole plate 11 peripheral parts is greater than the diameter of first gas orifice 111, thereby can further strengthen the ionization level of gas in the peripheral regions, and then can improve the influence of standing wave effect article on plasma volume density effectively.
In addition, each chamber 1 and internal structure material are anti-plasma material, can adopt aluminium such as chamber wall, and inner other parts can adopt part pottery and aluminium etc., can reduce maintenance needs to a great extent.
Please refer to Fig. 5, Fig. 5 is the structural representation of the lower electrode plate of chamber in an embodiment of the present invention.
In above-mentioned second kind of embodiment, can make further improvement to the lower surface of described electric pole plate 11 or the upper surface of described lower electrode plate 12.Particularly, in the upper surface of the lower surface of electric pole plate 11 and lower electrode plate 12, one of them end face is the depression end face.As shown in Figure 5, the upper surface that can specifically limit lower electrode plate 12 is the depression end face.This specification sheets of shape for described depression end face does not limit, such as being step, arc or other shapes.
From the above mentioned, standing wave effect can be so that the reaction cavity internal diameter makes progress the density height of region intermediate plasma body, the density of peripheral regions plasma body is low; And in the present embodiment, because the existence of described depression end face, make that the spacing of power-on and power-off pole plate is that region intermediate is big, peripheral regions is little, thereby make that the plasma density of region intermediate is low, the plasma density height of peripheral regions, thereby the PECVD system that present embodiment provided can further improve the influence of standing wave effect, thereby further improves the homogeneity of plasma density.
Particularly, please refer to Fig. 5, be filled with dielectric material 121 in the depressed part that the depression end face of lower electrode plate 12 forms, such as pottery, quartz etc., the homogeneity of substrate 3 temperature when this structure design helps to improve technology.
Please refer to Fig. 2 and Fig. 6, Fig. 6 is the structural representation of the go-cart of PECVD system in an embodiment of the present invention.
On the basis of above-mentioned any embodiment, PECVD provided by the present invention system can further include chip-loading apparatus; Described technical module and chamber 1 corresponding position offer a plurality of families of power and influence 2, and described chip-loading apparatus is sent into substrate 3 in the reaction cavity of each chamber 1 by the family of power and influence 2, perhaps substrate 3 is taken out from described reaction cavity.This setup helps to enhance productivity.
Particularly, as shown in Figure 2, described chip-loading apparatus comprises go-cart 4, and go-cart 4 is provided with a plurality of go-cart arms 41 relative with each family of power and influence 2 position, and substrate 3 is sent into by go-cart arm 41 in the reaction cavity of chamber 1, perhaps takes out in described reaction cavity.
During work, substrate 3 is taken out in go-cart 4 from the substrate bearing box, and when getting substrate 3, go-cart arm 41 enters substrate 3 belows in the Carrier box, and go-cart arm 41 rises or Carrier box descends takes out substrate 3; Whether go-cart 4 enters on the guide rail 43 then, and after technical module was ready to, go-cart 4 pushed chamber 1, put in place with locating point 42 location go-carts 4, and after substrate 3 was put into chamber 1, chamber 1 was withdrawed from go-cart 4; After technology is finished, take out substrate 3, then the substrate 3 of finishing technology is put into another one substrate bearing box with go-cart 4.
As shown in Figures 2 and 3, for the ease of the placement of substrate 3, can in each chamber 1, thimble 15 be set; When needs carry out technology, open the family of power and influence 2, with go-cart 4 or mechanical manipulator substrate 3 is transported in each chamber 1 in the technical module (as shown in Figure 2), rise thimble 15 then, withdraw from go-cart 4 or mechanical manipulator, close the family of power and influence 2, fall thimble 15, vacuumize, logical special air to open beginning technology; Rise thimble 15 after technology is finished, the valve 2 that opens the door pushes in the chamber 1 with go-cart 4 or mechanical manipulator, falls thimble 15, withdraws from mechanical manipulator or go-cart 4 then.
Obviously, above-mentioned mode of operation has significantly improved the transport efficiency of substrate 3, thereby has effectively improved the equipment output capacity.
In addition, when adopting the present invention to carry out technology, a plurality of chambers 1 can shared vacuum system, air-channel system, thus can significantly reduce equipment cost, and enhance productivity; The present invention simultaneously can adopt multiple spot to insert in the access of excitation system owing to adopt single chamber monolithic technology, can adopt the multiple spot air inlet in the gas circuit air inlet, guarantees exciting field distributing homogeneity and airflow homogeneity, and then guarantees whole process uniformity.
Moreover, all chambers 1 all can adopt excitation system separately, all comprise a power supply and matching network, the frequency of power supply can be 400KHz, 13.56MHz, 27.12MHz, 40.68MHz or higher, with respect to each chamber 1 shared excitation system, this structure is provided with the uniformly distributing that helps power.
At last, can also include heating system in chamber 1 lower electrode, as shown in Figure 3, whole chamber 1 outer wall has the thermoscreen 14 of insulation usefulness, can guarantee chamber 1 homo(io)thermism, and other portion temperature of technical module are unlikely to too high simultaneously.
More than a kind of PECVD provided by the present invention system is described in detail.Used specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection domain of claim of the present invention.
Claims (10)
1. a PECVD system is characterized in that, comprises technical module; Described technical module has cavity, is provided with a plurality of chambers (1) in the described cavity; The cavity of described technical module is connected with first vacuum system, and the reaction cavity of each described chamber (1) is connected with second vacuum system; Described first vacuum system and described second vacuum system are separate and can regulate separately.
2. PECVD as claimed in claim 1 system is characterized in that, electric pole plate (11) and lower electrode plate (12) are installed in the described chamber (1); Whole described electric pole plate (11) is distributed with a plurality of first gas orifices (111), and the peripheral part of described electric pole plate (11) is provided with second gas orifice (112); The diameter of described second gas orifice (112) is greater than the diameter of described first gas orifice (111).
3. as claim 1 or 2 described PECVD systems, it is characterized in that an end face in the upper surface of the lower surface of described electric pole plate (11) and described lower electrode plate (12) is the depression end face.
4. PECVD as claimed in claim 3 system is characterized in that, the upper surface of described lower electrode plate (12) is the depression end face; Be filled with dielectric material (121) in the depressed part that described depression end face forms.
5. PECVD as claimed in claim 3 system is characterized in that, also comprises chip-loading apparatus; Described chip-loading apparatus is sent into substrate (3) in the reaction cavity of each described chamber (1) by the family of power and influence (2), perhaps substrate (3) is taken out from described reaction cavity.
6. PECVD as claimed in claim 5 system, it is characterized in that, described chip-loading apparatus comprises go-cart (4), described go-cart (4) is provided with a plurality of and each the described family of power and influence (2) corresponding go-cart arm in position (41), described substrate (3) is sent in the reaction cavity of described chamber (1) by described go-cart arm (41), perhaps takes out in described reaction cavity.
7. PECVD as claimed in claim 3 system is characterized in that shared same described second vacuum system of each described chamber (1).
8. PECVD as claimed in claim 3 system is characterized in that the shared same air-channel system of each described chamber (1).
9. PECVD as claimed in claim 3 system is characterized in that each described chamber (1) connects an excitation system respectively.
10. PECVD as claimed in claim 3 system is characterized in that the outer wall of each described chamber is provided with thermoscreen (14).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910241478 CN102086514B (en) | 2009-12-03 | 2009-12-03 | PECVD (plasma enhanced chemical vapor deposition) system |
| PCT/CN2010/078560 WO2011066769A1 (en) | 2009-12-03 | 2010-11-09 | Plasma-enhanced chemical vapor deposition system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910241478 CN102086514B (en) | 2009-12-03 | 2009-12-03 | PECVD (plasma enhanced chemical vapor deposition) system |
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| CN102086514A true CN102086514A (en) | 2011-06-08 |
| CN102086514B CN102086514B (en) | 2013-07-17 |
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| CN 200910241478 Active CN102086514B (en) | 2009-12-03 | 2009-12-03 | PECVD (plasma enhanced chemical vapor deposition) system |
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| CN (1) | CN102086514B (en) |
| WO (1) | WO2011066769A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110828273A (en) * | 2018-08-09 | 2020-02-21 | 北京北方华创微电子装备有限公司 | Plasma apparatus and plasma system |
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| US6296735B1 (en) * | 1993-05-03 | 2001-10-02 | Unaxis Balzers Aktiengesellschaft | Plasma treatment apparatus and method for operation same |
| CN101018886A (en) * | 2004-07-12 | 2007-08-15 | 应用材料股份有限公司 | Plasma uniformity control by gas diffuser curvature |
| CN201215800Y (en) * | 2008-04-15 | 2009-04-01 | 上海华虹Nec电子有限公司 | Upper electrode for semiconductor etching device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CH687986A5 (en) * | 1993-05-03 | 1997-04-15 | Balzers Hochvakuum | Plasma treatment equipment and method for its operation. |
| JPH07138759A (en) * | 1993-11-17 | 1995-05-30 | Nissin Electric Co Ltd | Vacuum treating device |
| JP3027968B2 (en) * | 1998-01-29 | 2000-04-04 | 日新電機株式会社 | Film forming equipment |
| JP2006245365A (en) * | 2005-03-04 | 2006-09-14 | Hitachi High-Technologies Corp | Vacuum processing apparatus |
| US20060228490A1 (en) * | 2005-04-07 | 2006-10-12 | Applied Materials, Inc. | Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems |
| CN100359041C (en) * | 2006-01-20 | 2008-01-02 | 浙江大学 | Electronic ceramic continuous sputtering coating equipment |
| CN101207034B (en) * | 2006-12-20 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber top cover and reaction chamber containing said top cover |
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2009
- 2009-12-03 CN CN 200910241478 patent/CN102086514B/en active Active
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- 2010-11-09 WO PCT/CN2010/078560 patent/WO2011066769A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6296735B1 (en) * | 1993-05-03 | 2001-10-02 | Unaxis Balzers Aktiengesellschaft | Plasma treatment apparatus and method for operation same |
| CN101018886A (en) * | 2004-07-12 | 2007-08-15 | 应用材料股份有限公司 | Plasma uniformity control by gas diffuser curvature |
| CN201215800Y (en) * | 2008-04-15 | 2009-04-01 | 上海华虹Nec电子有限公司 | Upper electrode for semiconductor etching device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110828273A (en) * | 2018-08-09 | 2020-02-21 | 北京北方华创微电子装备有限公司 | Plasma apparatus and plasma system |
| CN110828273B (en) * | 2018-08-09 | 2022-07-22 | 北京北方华创微电子装备有限公司 | Plasma apparatus and plasma system |
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| WO2011066769A1 (en) | 2011-06-09 |
| CN102086514B (en) | 2013-07-17 |
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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |