CN102086020A - Method for manufacturing silicon sub-carrier - Google Patents
Method for manufacturing silicon sub-carrier Download PDFInfo
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- CN102086020A CN102086020A CN2010105812248A CN201010581224A CN102086020A CN 102086020 A CN102086020 A CN 102086020A CN 2010105812248 A CN2010105812248 A CN 2010105812248A CN 201010581224 A CN201010581224 A CN 201010581224A CN 102086020 A CN102086020 A CN 102086020A
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- silicon substrate
- insulating barrier
- method step
- silicon
- conductive material
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 120
- 239000010703 silicon Substances 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 119
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 239000004020 conductor Substances 0.000 claims abstract description 84
- 230000004888 barrier function Effects 0.000 claims description 55
- 238000007639 printing Methods 0.000 claims description 24
- 208000034189 Sclerosis Diseases 0.000 claims description 8
- 230000004927 fusion Effects 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 150000003376 silicon Chemical class 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000011084 recovery Methods 0.000 claims description 2
- 238000004377 microelectronic Methods 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract 3
- 230000005484 gravity Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009422 external insulation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000010813 municipal solid waste Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/005—Bulk micromachining
- B81C1/00515—Bulk micromachining techniques not provided for in B81C1/00507
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/0143—Focussed beam, i.e. laser, ion or e-beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention relates to a method for manufacturing silicon sub-carrier (1) for installing e.g. micro-electronic mechanical devices and /or electronic devices with integrated circuit, on a substrate, especially on a circuit board. The method involves inserting a recess (2) in a silicon substrate (3) using a laser process, where the recess extends from a first side (I) to a second side (II) of the silicon substrate (3). A first insulation layer (4) is formed on a portion of a surface of the silicon substrate (3), where the first insulation layer (4) extends from the first side (I) to the second side (II) of the substrate (3) through the recess (2). An electrically conductive material (5) is applied on the first insulation layer (4) for forming a through-connection from the first side (I) to the second side (II) of the substrate (3) through the recess (2).
Description
Background technology
The present invention relates to a kind of method and middle supporting body of silicon that is used to make the middle supporting body of silicon.
Summary of the invention
Microminiaturization is current at IC chip (IC chip, English: " integrated circuitchips ") and the manufacturing of Micro Electronic Mechanical System die (MEMS chip, English: " microelektromechanical system chips ") and the trend in the interconnection technique.Packed device should be big a lot of unlike chip itself under possible situation at this, and this is also referred to as CSP (English: " chip size package (chip size packages) " or " chip scale package (wafer-level package) ").The possibility that provides on the substrate this directly is provided chip (not having housing ground), and this is also referred to as nude film (English: " bare die ") or nude film is installed (COB, English: " chip on board (chip on board) ").
Nude film under the situation of the microelectromechanical systems that is used for entertainment electronic devices and household electronic device (MSMS) installs because the following former thereby difficulty that becomes: product comprises two chips usually, i.e. the circuit chip (asic chip) of a Micro Electronic Mechanical System die (MEMS chip) and a special use.If directly on substrate, make up two chips, then these chips individually must be offered the client, and it can not jointly be proofreaied and correct or test in advance.In addition, Micro Electronic Mechanical System die is for the mechanical stress sensitivity.This mechanical stress can be especially under the situation of temperature fluctuation owing to the material that is used to build for example the different heat expansion coefficient of chip, solder flux, substrate and Functional Capability that can EVAC appears.
Publication US 7,447,323B2 has described a kind of device, and wherein especially microphone and the device that comprises integrated circuit are arranged on first side of supporting body in the middle of the silicon that silicon constitutes conversion element abreast.The break-through contact site of second side of supporting body in the middle of supporting body has from first side of supporting body in the middle of the silicon to silicon in the middle of the silicon, so as with the conversion element on first side or electronic installation by the break-through contact site be arranged on silicon in the middle of on second side of supporting body substrate for example circuit board be electrically connected.By supporting body in the middle of the silicon, can reduce the thermal and mechanical stress of substrate to conversion element or electronic installation at this.
Publication US 7,447,323B2 has proposed to make the break-through contact site by etching, especially wet chemical etching or plasma etching and metallization subsequently.Yet particularly because engraving method, according to publication US 7,447, the method for 323B2 be associated than higher manufacturing cost.
Summary of the invention
Theme of the present invention is a kind of method that is used to make the middle supporting body of silicon, the electronic installation that supporting body is used for that microelectromechanicdevices devices is installed and/or has integrated circuit in the middle of the silicon on substrate, especially circuit board, and this method comprises following method step:
A) by laser means, for example laser ablation method at least one recess is introduced in the silicon substrate, its center dant extends to second side from first side of silicon substrate,
B) construct first insulating barrier at least on the subregion of surface of silicon substrate, described subregion extends to second side from first side of silicon substrate by recess, and
C) conductive material is applied to is used to construct at least one on first insulating barrier from first side of silicon substrate break-through contact site by recess to the second side.
The advantage that the method according to this invention has is that it can realize supporting body cost in the middle of the silicon is made extremely cheaply.Thus, especially can be in the material advantage on the thermal coefficient of expansion basis that realizes silicon under the situation of considering cost pressure with respect to supporting body in the middle of the plastics silicon.Advantageously, be used to make according to of the present invention that the method for supporting body need not photoetching method and/or engraving method in the middle of the silicon.In addition, in order not necessarily needing to realize clean room environment.
This laser means can advantageously be carried out with very high speed.What shown is that coarse surface that possible occur in laser means or residue (discarded object in laser drill) can be advantageously used in adhering to of conductive material.
Can especially introduce at least one recess at method step in a) by laser drill.Correspondingly, recess also can be called the hole of passing silicon substrate.
In the scope of a form of implementation of this method, especially introduce alignment mark at method step in addition in a) by laser means, for example being used for after the divided silicon substrate and/or be used for after locate described device.
In the scope of another form of implementation of this method, at method step b) in construct first insulating barrier by the oxidation of surface of silicon substrate.This can advantageously act on the coarse surface or the residue (discarded object in laser drill) that may occur in laser means.At method step b) in, first insulating barrier can be by at least in part and by the surface of silicon oxide substrate fully constructing.The oxidation completely on surface can be implemented by less technology expense at this.
In the scope of another form of implementation of this method, at method step b) in by first insulating barrier is constructed in the surface of silicon substrate thermal oxide.This for example can carry out in the stove under the oxidizing atmosphere, especially contains in the atmosphere of oxygen, carries out in for example air.By thermal oxide, silicon substrate can be insulated all sidedly.
In the scope of another form of implementation of this method, at method step b) and/or c) in especially side by side also at least one first electric printed conductor is configured on first side and/or second side of silicon substrate by described at least one break-through contact site, wherein at method step b) in first insulating barrier is configured on the subregion of surface of silicon substrate at least, wherein at method step c) on these subregions the structure described at least one first electric printed conductor.
In the scope of another form of implementation of this method, at method step c) in apply conductive material by printing process, especially method for printing screen.Typography advantageously cost is very cheap, and implements in continuation method.In addition, can advantageously realize having width by printing process and be printed conductor more than or equal to 100 μ m.
Method step c) can be subdivided into method step
C1) conductive material is applied on first insulating barrier on first side of silicon substrate, and method step
C2) conductive material is applied on first insulating barrier on second side of silicon substrate.
In the scope of another form of implementation of this method, this method is at method step c) comprise method step afterwards:
D) silicon substrate (3) is heated to the temperature of conductive material (5) fusion, and subsequently silicon substrate (3) is cooled to the temperature of conductive material (5) sclerosis.
In this way, can guarantee on the one hand conductive material is connected on first insulating barrier better.On the other hand, can make first side that is applied to silicon substrate and/or the conductive material on second side flow in the recess and structure break-through contact site.
In the scope of another form of implementation of this method, implementation method step d) in a vacuum.In this way, can avoid field trash in conductive material.
In the scope of another form of implementation of this method, method step c) and d) be subdivided into following method step c1) and c2) and d1) and d2):
C1) conductive material is applied on first insulating barrier on first side of silicon substrate,
D1) silicon substrate first is heated to the temperature of conductive material fusion, and subsequently silicon substrate is cooled to the temperature of conductive material sclerosis.
C2) conductive material is applied on first insulating barrier of second side of silicon substrate, and
D2) silicon substrate second is heated to the temperature of conductive material fusion, and subsequently silicon substrate is cooled to the temperature of conductive material sclerosis.
At this, silicon substrate can be at method step d1) and method step c2) between the axis Rotate 180 in the substrate plane ° for example.At method step d1) in, silicon substrate is arranged so that preferably first side of silicon substrate is positioned at the top about gravity direction.At method step d2) in, silicon substrate is arranged so that preferably second side of silicon substrate is positioned at the top about gravity direction.In this way, conductive material can flow by gravity in the recess respectively.
This method can be at method step c) and/or d) also comprise method step afterwards
E1) apply at least one second insulating barrier.
Second insulating barrier this can partly be applied to first insulating barrier, on the zone that especially is not capped, for example not with described at least one first electric printed conductor zone that cover, first insulating barrier and/or partly be applied on described at least one break-through contact site and/or partly be applied on described at least one electric printed conductor.
For example, second insulating barrier can be applied for and make described at least one first electric printed conductor form the border by second insulating barrier laterally.In this way, can prevent that described at least one first electric printed conductor is at method step d) in heating hour offset or lose profile.
To this alternatively or additionally, second insulating barrier can partly be applied on described at least one break-through contact site or described at least one first electric printed conductor, makes the part of described at least one break-through contact site or described at least one first electric printed conductor do not covered by second insulating barrier in order to contact the break-through contact site or the first electric printed conductor.In this way, the break-through contact site or the first electric printed conductor can be partly to external insulation and still can partly can contact from the outside.
Being applied to this and can in a step or in two or more steps, carrying out of second insulating barrier.For example, second insulating barrier can be applied to first and/or second side of silicon supporting body by (except being used to contact the zone of the break-through contact site or the first electric printed conductor) plane earth in a step.Yet, second insulating barrier also can be applied on first insulating barrier in first step, make described at least one first electric printed conductor form the border by second insulating barrier in the side, and in second step, partly be applied to (and partly being applied on the second insulating barrier zone of in first step, making) on described at least one first electric printed conductor, make the part of described at least one first electric printed conductor not cover with second insulating barrier in order to contact the described first electric printed conductor.Applying of second insulating barrier can advantageously be undertaken by with low cost and printing process that can implement in continuation method.
In the scope of another form of implementation of this method, this method is therefore at method step c) and/or d) comprise method step afterwards in addition
E1) apply at least one second insulating barrier by printing process.
Printing process can for example be seal glass printing process (Sealglasdruck-verfahren) or polymeric printing method at this.Especially, printing process can be a method for printing screen.
This method can be at method step e1) comprise method step afterwards
E2) at least one second electric printed conductor is applied on described at least one second insulating barrier.
Especially, can be at method step e2) in by printing process described at least one second electric printed conductor is applied on described at least one second insulating barrier.Printing process can be a method for printing screen at this equally.
Especially, method step e1) and e2 can repeatedly alternately carry out in succession.Like this, also can realize the staggered of printed conductor.
Yet the staggered of printed conductor also can be by guaranteeing on the opposite side that printed conductor is guided to the middle supporting body of silicon by the break-through contact site.In order to be implemented in interlocking between two printed conductors, one of printed conductor can be by the side directed opposite side to silicon substrate of break-through contact site from silicon substrate.In case of necessity, a described printed conductor can then guide to returning again by the second break-through contact site.For example, printed conductor and break-through contact site can be constructed so that at least one printed conductor that is arranged on first side is divided into a plurality of printed conductor sections, especially staggered for another printed conductor on first side that realizes and be arranged on silicon substrate, wherein the first printed conductor section contacts the first break-through contact site on first side of silicon substrate, and wherein the first break-through contact site contacts the second printed conductor section on second side of silicon substrate.The second printed conductor section can contact the second break-through contact site on second side at silicon substrate in addition at this, and wherein the second break-through contact site contacts the 3rd printed conductor section on first side of silicon substrate.
This method in addition can be at method step c) and/or d) and/or e) comprise method step afterwards
F) with silicon substrate separation, for example sawing, especially be divided into two or more a plurality of less silicon substrate, especially a plurality of less silicon substrates.
By on big silicon substrate, implementing this method and separation subsequently, can advantageously in the short time, make the middle supporting body of a large amount of silicon, and further reduce manufacturing cost.
In the scope of another form of implementation of this method, silicon substrate is constructed by polysilicon and/or the silicon of low-purity (metallurgy grade) and/or the silicon of recovery.In this way, can advantageously further reduce manufacturing cost.
First side and second side of silicon substrate can be opposite each other.Especially first side of substrate and second side can be parallel to each other basically.
Supporting body can comprise the first set of contact element in the middle of the silicon on first side, especially is selected from the contact element of the group that is made of printed conductor and break-through contact site, is used to contact microelectromechanicdevices devices; And comprise the second set of contact element, and especially be selected from the contact element of the group that constitutes by printed conductor and break-through contact site, be used to contact electronic installation with integrated circuit.On second side, supporting body can comprise another set of contact element in the middle of the silicon, especially be selected from the contact element of the group that constitutes by printed conductor and break-through contact site, be used for the contact circuit plate, wherein be electrically connected one of at least with the contact element of described first group or second group.Microelectromechanicdevices devices for example can be pressure sensor or acceleration transducer or speed probe or microelectron-mechanical actuator.Electronic installation for example can have special circuit (ASIC) as integrated circuit.
Another theme of the present invention is a supporting body in the middle of a kind of silicon, especially makes by the method according to this invention, and supporting body is characterised in that it comprises at least in the middle of this silicon:
-the recess introduced by laser means, and/or
-the alignment mark introduced by laser means, and/or
-the printed conductor that applies by printing process, especially method for printing screen,
-as silicon oxide layer first insulating barrier, that silicon substrate is surrounded especially fully, and/or
-second insulating barrier that applies by printing process, especially method for printing screen.
Supporting body can comprise the first set of contact element in the middle of the silicon on first side, especially is selected from the contact element of the group that is made of printed conductor and break-through contact site, is used to contact microelectromechanicdevices devices; And comprise the second set of contact element, and especially be selected from the contact element of the group that constitutes by printed conductor and break-through contact site, be used to contact electronic installation with integrated circuit.On second side, supporting body can comprise another set of contact element in the middle of the silicon, especially be selected from the contact element of the group that constitutes by printed conductor and break-through contact site, be used for the contact circuit plate, wherein be electrically connected one of at least with the contact element of described first group or second group.Microelectromechanicdevices devices for example can be pressure sensor or acceleration transducer.Electronic installation for example can have special circuit (ASIC) as integrated circuit.
Description of drawings
According to other advantages of theme of the present invention with favourable expansion scheme is represented by accompanying drawing and set forth in the following description.Be noted that at this accompanying drawing only has descriptive characteristics, and be not to be intended to limit in any form the present invention.Wherein:
Fig. 1 shows the schematic cross-section according to an embodiment of supporting body in the middle of the silicon of the present invention.
The specific embodiment
Fig. 1 shows that supporting body 1 has silicon substrate 3 in the middle of the silicon, this silicon substrate 3 have the first side I and with the second side II of the first side I parallel opposed.By laser means recess 2 is introduced in this silicon substrate 3, this recess extends to the second side II from the first side I of silicon substrate 3.Then, construct the silicon oxide layer 4 that surrounds silicon substrate 3 fully by the oxidation on surface of silicon substrate, it is as first insulating barrier.
Subsequently, conductive material 5 at first has been applied in order to construct penetrating part 6 and electric printed conductor 7 on first insulating barrier 4 on the first side I of silicon substrate 3.Simultaneously or subsequently, the zone of second insulating barrier 8 is applied to by printing process on first insulating barrier 4 on the first side I of silicon substrate 3, makes electric printed conductor 7 form borders by second insulating barrier zone 8 in the side.Subsequently, silicon substrate 3 is heated to the temperature of conductive material 5 fusions for the first time, and is cooled to the temperature of conductive material 5 sclerosis again.At this, silicon substrate 3 is arranged so that the first side I of silicon substrate 3 is positioned at the top about gravity direction.In this way, being applied to conductive material 5 on the first side I of silicon substrate 3 can flow in the recess 2 and the first of structure break-through contact site 6.Subsequently, silicon substrate 3 is rotated 180 ° around the axis in the substrate plane, make silicon substrate 3 be arranged so that the second side II of silicon substrate 3 is positioned at the top about gravity direction.Subsequently, conductive material 5 is applied in order to construct break-through contact site 6 and electric printed conductor 7 on first insulating barrier 4 on the second side II of silicon substrate 3.Simultaneously or subsequently, the zone of second insulating barrier 8 is applied to by printing process on first insulating barrier 4 on the second side II of silicon substrate 3, makes electric printed conductor 7 form borders by second insulating barrier zone 8 in the side.Subsequently, silicon substrate 3 is heated to the temperature of conductive material 5 fusions for the second time, and then is cooled to the temperature of conductive material 5 sclerosis.In this way, being applied to conductive material 5 on the second side II of silicon substrate 3 flows in the recesses 2 and the second portion of structure break-through contact site 6.
Subsequently, on both sides I, the II of supporting body 1 in the middle of the silicon, apply the other zone of second insulating barrier 8 respectively by printing process, wherein be applied on the printed conductor 7 the other area part of second insulating barrier 8 and partly be applied on the second insulating barrier zone 8 of prior manufacturing, make the part of printed conductor 7 do not covered respectively by second insulating barrier 8 for later contact.
Claims (12)
1. method that is used to make supporting body (1) in the middle of the silicon, this method is used for that microelectromechanicdevices devices is installed and/or has integrated circuit on substrate electronic installation, this method comprises following method step:
A) by laser means at least one recess (2) is introduced in the silicon substrate (3), its center dant (2) extends to second side (II) from first side (I) of silicon substrate (3),
B) structure first insulating barrier (4) on the subregion on the surface of silicon substrate (3) at least, described subregion extends to second side (II) from first side (I) of silicon substrate (3) by recess (2), and
C) conductive material (5) is applied to be used on first insulating barrier (4) to construct at least one from first side (I) of silicon substrate (3) by the break-through contact site of recess (2) to second side (II).
2. method according to claim 1 is characterized in that, introduces alignment mark at method step in addition in a).
3. method according to claim 1 and 2 is characterized in that, at method step b) in the oxidation on surface by silicon substrate (3) construct first insulating barrier (4).
4. according to the described method of one of claim 1 to 3, it is characterized in that, at method step b) in by first insulating barrier (4) is constructed in the surface heat oxidation of silicon substrate (3).
5. according to the described method of one of claim 1 to 4, it is characterized in that, at method step b) and c) in also at least one first electric printed conductor (7) is configured on first side (I) and/or second side (II) of silicon substrate (3) by at least one break-through contact site (6), wherein at method step b) in first insulating barrier (4) is configured on the subregion on surface of silicon substrate (3) at least, wherein on these subregions at method step c) in described at least one the first electric printed conductor (7) of structure.
6. according to the described method of one of claim 1 to 5, it is characterized in that, at method step c) in apply conductive material (5) by printing process.
7. according to the described method of one of claim 1 to 6, it is characterized in that, at method step c) comprise method step afterwards:
D) silicon substrate (3) is heated to the temperature of conductive material (5) fusion, and subsequently silicon substrate (3) is cooled to the temperature of conductive material (5) sclerosis.
8. method according to claim 7 is characterized in that, in a vacuum the implementation method step d).
9. according to the described method of one of claim 1 to 8, it is characterized in that method step c) and d) be subdivided into following method step c1) and c2) and d1) and d2):
C1) conductive material (5) is applied on first insulating barrier (4) on first side (I) of silicon substrate (3),
D1) silicon substrate (3) first is heated to the temperature of conductive material (5) fusion, and subsequently silicon substrate (3) is cooled to the temperature of conductive material (5) sclerosis,
C2) conductive material (5) is applied on first insulating barrier (4) of second side (II) of silicon substrate (3), and
D2) silicon substrate (3) second is heated to the temperature of conductive material (5) fusion, and subsequently silicon substrate (3) is cooled to the temperature of conductive material (5) sclerosis.
10. according to the described method of one of claim 1 to 9, it is characterized in that, at method step c) and/or d) also comprise method step afterwards
E1) apply at least one second insulating barrier (8) by printing process.
11., it is characterized in that described silicon substrate (3) is constructed by the silicon of polysilicon and/or low-purity and/or the silicon of recovery according to the described method of one of claim 1 to 10.
12. supporting body (1) in the middle of the silicon is characterized in that, supporting body comprises at least in the middle of this silicon:
-the recess (2) introduced by laser means, and/or
-the alignment mark introduced by laser means, and/or
-the printed conductor (7) that applies by printing process, and/or
-as silicon oxide layer (4) first insulating barrier, that surround silicon substrate (3), and/or
-second insulating barrier (8) that applies by printing process.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009047592.3A DE102009047592B4 (en) | 2009-12-07 | 2009-12-07 | Process for producing a silicon intermediate carrier |
| DE102009047592.3 | 2009-12-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102086020A true CN102086020A (en) | 2011-06-08 |
| CN102086020B CN102086020B (en) | 2016-01-27 |
Family
ID=43971985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010581224.8A Expired - Fee Related CN102086020B (en) | 2009-12-07 | 2010-12-06 | For the manufacture of the method for silicon sub-carrier |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN102086020B (en) |
| DE (1) | DE102009047592B4 (en) |
| TW (1) | TWI564239B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102969301A (en) * | 2011-08-30 | 2013-03-13 | 台湾积体电路制造股份有限公司 | Semiconductor devices with self-heating structures, methods of manufacture thereof, and testing methods |
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| CN1625805A (en) * | 2002-02-06 | 2005-06-08 | 揖斐电株式会社 | Board for mounting semiconductor chip and manufacturing method and semiconductor module |
| US20040120376A1 (en) * | 2002-12-18 | 2004-06-24 | Kyu-Sub Kwak | Vertical cavity surface emitting laser and method for fabricating the same |
| CN1571620A (en) * | 2003-07-14 | 2005-01-26 | 银河光电股份有限公司 | Structure of substrate, structure of insulating layer of substrate, and manufacturing method thereof |
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| CN102969301A (en) * | 2011-08-30 | 2013-03-13 | 台湾积体电路制造股份有限公司 | Semiconductor devices with self-heating structures, methods of manufacture thereof, and testing methods |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE102009047592A1 (en) | 2011-06-09 |
| TW201130729A (en) | 2011-09-16 |
| CN102086020B (en) | 2016-01-27 |
| DE102009047592B4 (en) | 2019-06-19 |
| TWI564239B (en) | 2017-01-01 |
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