CN102082058A - Plasma display parts with crystal emission layer - Google Patents
Plasma display parts with crystal emission layer Download PDFInfo
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- CN102082058A CN102082058A CN2010105806459A CN201010580645A CN102082058A CN 102082058 A CN102082058 A CN 102082058A CN 2010105806459 A CN2010105806459 A CN 2010105806459A CN 201010580645 A CN201010580645 A CN 201010580645A CN 102082058 A CN102082058 A CN 102082058A
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- mgo
- crystal
- emission layer
- plasma display
- layer
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Abstract
The invention discloses plasma display parts with a crystal emission layer, relates to the technical field of plasma display parts, and in particular to the technical field of the plasma display parts with the crystal emission layer. One side on a dielectric layer of a front base plate towards a rear base plate is provided with an MgO thin film of a front base plate protective film; a pixel space is formed between barriers and a dielectric layer of the rear base plate, and the inner wall of the pixel space is coated with a fluorescent powder layer; one side, towards the rear base plate, of the MgO thin film of the front base protective film between two barriers is provided with a crystal emission layer; and the crystal emission layer is composed of a plurality of MgO crystal grains, and each MgO crystal grain is doped with S2 type ion. According to the invention, a doped MgO single crystal is adopted as the crystal emission layer, the properties of the plasma parts are improved, the statistic response time is reduced, an appropriate impurity center forms in MgO crystal by utilizing doped elements to achieve the aim of a secondary emission property.
Description
Technical field
The present invention relates to the technical field of plasma device, relate in particular to the technical field of band crystal emission layer.
Background technology
The MgO film is to use at plasma device, as protective layer traditional in the plasma display device, because it has higher secondary electron yield and to the anti-bombardment of ion, make it to become the first-selection of plasma device protective layer the Ne ion.But along with the raising of such device resolution, the demand that luminous efficiency improves; adopt the working gas of high Xe proportioning to become the certainty that plasma device develops; but the high firing voltage of the thing followed; long response time becomes new restriction again, and therefore novel protected layer Study on Technology becomes one of important channel that solves these technological difficulties.
Japan Pioneer company utilizes its exoelectron emission characteristics at first at MgO film preparation one deck MgO monocrystalline, for plasma display device provides initiating electron in the addressing process, greatly reduces the counting response time of plasma display device.This technology is that plasma display device realizes that the immediate addressing under the high-resolution has solved key and the important techniques difficult point, has promoted the development process of plasma display device technology greatly, and the plasma display device performance is greatly improved.This layer material is called the crystal emission layer.The crystal emission layer adopts highly purified MgO monocrystal material usually at present, and deposition one deck crystal emissive layer materials counting response time is shortened, and other characteristic of article on plasma body device is not improved as luminosity, luminous efficiency on the MgO of routine film.
The object of the invention provides a kind of MgO monocrystalline of doping that adopts as the crystal emission layer, comprehensively improve the characteristic of plasma device, reduce counting response time, utilize doping elements in the MgO crystal, to form suitable impurity center simultaneously, with the plasma display device of the band crystal emission layer that improves secondary electron emission characteristic.
A kind of plasma device with the crystal emission layer, comprise the prebasal plate, the metacoxal plate that be arranged in parallel, prebasal plate comprises preceding substrate glass substrate, scan electrode, keeps electrode, front substrate medium layer, prebasal plate diaphragm MgO film, evenly arrange scan electrode, keep electrode towards a side of metacoxal plate on the preceding substrate glass substrate, scan electrode, a side of keeping on the electrode towards metacoxal plate are provided with front substrate medium layer, arrange prebasal plate diaphragm MgO film towards a side of metacoxal plate on the front substrate medium layer; Metacoxal plate comprises back substrate glass substrate, addressing electrode, metacoxal plate dielectric layer, barrier, side towards prebasal plate on the back substrate glass substrate is provided with addressing electrode, addressing electrode is provided with the metacoxal plate dielectric layer towards a side of prebasal plate, at least two barriers that be arranged in parallel between metacoxal plate dielectric layer and the prebasal plate diaphragm MgO film, barrier is vertical with prebasal plate or metacoxal plate respectively; Form pixel space between barrier and the metacoxal plate dielectric layer, the inwall of pixel space applies phosphor powder layer; Side towards metacoxal plate on the prebasal plate diaphragm MgO film between two barriers is provided with the crystal emission layer, and described crystal emission layer is made up of several MgO crystal grain, doping S2 type ion in each MgO crystal grain.
Mix several MgO crystal grain, doping S2 type ion in each MgO crystal grain in the phosphor powder layer of the present invention between two barriers.
The doping ratio of s2 type ion of the present invention and MgO is 200ppm～1000ppm, and crystallite dimension is 200nm～2mm.
S2 type ion of the present invention is a kind of in the following ion set: Al
3+, Ga
3+, In
3+, Sc
3+, Nd
3+, Pr
3+, Bi
3+, Zn
2+, Cd
2+, Br
-, Cl
-, F
-And N
3-
S2 type ion of the present invention is a kind of in the following ion set: Si
2+, Ge
2+, Sn
2+, As
3+And Sb
3+
S2 type ion of the present invention is a kind of in the following ion set: Pb
2+Or Pr
3+
The ion of the dvielement that the s track that s2 type ion of the present invention refers to ion fills up with 2 electronics.From the periodic table of element, just be meant Ge, Sn, the element in the Pb row, the s track is filled, and the electronics more than 2 is filled into the p track, after becoming ion, has only the s track, does not have the electronics of more p track rotations, as Ge
2+, Sn
2+, Pb
2+For As, Sb and Bi element also are same, after 3 unnecessary electronics of p track are removed, become As
3+, Sb
3+, Bi
3+For Tl
+Also be same situation,, become Tl after the ionization because after the Tl atom fills up the s track, have only a p-electronics
+Ion; For Pr
3+This class ion, inside is at first removed from atom at 3 electronics of f track, has stayed the s track that fills up, and has not had unnecessary electronics.
The present invention adopts technique scheme, compared with prior art has following advantage:
1, crystal emissive layer materials of the present invention is the MgO monocrystalline of doping S2 type ion, can comprehensively improve the characteristic of plasma device, both reduced the counting response time of addressing process, improve luminous efficiency simultaneously, reduce device power consumption, especially article on plasma volumetric display spare is used significant in the high definition TV field.
2, crystal emissive layer materials of the present invention is the MgO monocrystalline of doping S2 type ion, can be widely used in the plasma discharger spare of medium blocking type, as the Plasma Display display device, plasma flat light source, the xenon vacuum UV lamp, atmospheric discharge device etc. have wide range of applications.
3, the crystal emissive layer materials preparation method in the plasma device of the present invention is simple.
Description of drawings
Fig. 1 is the structural representation that crystal emission layer of the present invention is deposited on the plasma device on the prebasal plate.
Fig. 2 is the structural representation of crystal emission layer spraying coating process of the present invention.
Fig. 3 is the structural representation that crystal emission layer of the present invention is deposited on the plasma device of prebasal plate and phosphor powder layer.
Embodiment
Below in conjunction with accompanying drawing technical scheme of the present invention is elaborated:
As shown in Figure 1, a kind of plasma display device with the crystal emission layer, comprise the prebasal plate 1 that be arranged in parallel, metacoxal plate 2, prebasal plate 1 comprises preceding substrate glass substrate 11, scan electrode 12, keep electrode 13, front substrate medium layer 14, prebasal plate diaphragm MgO film 15, evenly arrange scan electrode 12 towards a side of metacoxal plate 2 on the preceding substrate glass substrate 11, keep electrode 13, scan electrode 12, a side of keeping on the electrode 13 towards metacoxal plate 2 is provided with front substrate medium layer 14, arranges prebasal plate diaphragm MgO film 15 towards a side of metacoxal plate 2 on the front substrate medium layer 14; Metacoxal plate 2 comprises back substrate glass substrate 21, addressing electrode 22, metacoxal plate dielectric layer 23, barrier 24, side towards prebasal plate 1 on the back substrate glass substrate 21 is provided with addressing electrode 22, addressing electrode 22 is provided with metacoxal plate dielectric layer 23 towards a side of prebasal plate 1, at least two barriers 24 that be arranged in parallel between metacoxal plate dielectric layer 23 and the prebasal plate diaphragm MgO film 15, barrier 24 is vertical with prebasal plate 1 or metacoxal plate 2 respectively; Form pixel space 3 between barrier 24 and the metacoxal plate dielectric layer 23, the inwall of pixel space 3 applies phosphor powder layer 4; Side towards metacoxal plate 2 on the prebasal plate diaphragm MgO film 15 between two barriers is provided with the crystal emission layer, and described crystal emission layer is made up of several MgO crystal grain 5, doping S2 type ion in each MgO crystal grain 5.
MgO single grain of the present invention not only can form the crystal emission layer, can also mix by a certain percentage with fluorescent material simultaneously, is made in together in the phosphor powder layer, improves the luminous efficiency of fluorescent material.As shown in Figure 2, mix several MgO crystal grain 5, doping S2 type ion in each MgO crystal grain 5 in the phosphor powder layer 4 of the present invention between two barriers 24.
The doping ratio of s2 type ion of the present invention and MgO is 200ppm～1000ppm, and crystallite dimension is 200nm～2mm.
S2 type ion of the present invention is a kind of in the following ion set: Al
3+, Ga
3+, In
3+, Sc
3+, Nd
3+, Pr
3+, Bi
3+, Zn
2+, Cd
2+, Br
-, Cl
-, F
-And N
3-
S2 type ion of the present invention is a kind of in the following ion set: Si
2+, Ge
2+, Sn
2+, As
3+And Sb
3+
S2 type ion of the present invention is a kind of in the following ion set: Pb
2+Or Pr
3+
As shown in Figure 1; the structure of plasma surface discharge type display device of the present invention comprises prebasal plate 1; metacoxal plate 2; prebasal plate 1 comprises preceding substrate glass substrate 11; scan electrode 12 and keep electrode 13; front substrate medium layer 14; prebasal plate diaphragm MgO film 15; scan electrode 12 and keep electrode 13 and be arranged in parallel in before on the substrate glass substrate 11; front substrate medium layer 14 covers scan electrode 12 and keeps on the electrode 13; the mode evaporation that prebasal plate protective layer MgO film 15 passes through electron beam evaporation is deposited on crystal emission layer 5 surface of prebasal plate diaphragm MgO film 14 by spraying method on front substrate medium layer 14.Metacoxal plate 2 comprises back substrate glass substrate 21, addressing electrode 22, metacoxal plate dielectric layer 23, barrier 24, and at the red, green, blue phosphor powder layer 4 of barrier 24 with the inwall coating of the pixel space 3 of metacoxal plate dielectric layer 23 encirclements.
As shown in Figure 2, spray coating liquor 6 of the present invention is according to 5～10% the ratio of using weight of solvent with the crystal emission layer, be distributed in the volatile organic solvent, organic solvent can adopt ethanol or isopropyl alcohol, makes it to be dispersed in through sonicated to form in the solvent.During spraying spray coating liquor 6 packed into the hopper 8 of spray gun 7, the atomizing that utilizes pressure to produce adopts spray gun 7 that spray solution is sprayed at the surface of evaporation MgO film 15 uniformly, the MgO film size that spray deposited crystal emission layer covers be less than its 30%.
The crystal emission layer that the present invention is made by the MgO crystal grain of doping S2 type ion not only is suitable for plasma display device, also is suitable for other plasma device, as plasma flat light source, and the pure Xe lamp of vacuum ultraviolet (VUV) etc.
Be a kind of embodiment of plasma display panel wherein as shown in Figure 1, its concrete operation principle is as follows: apply positive pulse Va at addressing electrode 22, consistent with the signal of display image, apply negative pulse Vs at scan electrode 12, at first produce discharge at addressing electrode 22 and scan electrode 12, the required wall electric charge of discharge is kept in accumulation, make this unit be in illuminating state simultaneously, apply the negative pulse Vs that keeps keeping electrode 13, the discharge cell of lighting is at wall electric charge and keeping under the pulse acting in conjunction, the state that always maintainings lights arrives up to erasing pulse.The erase mode of discharge cell has multiple, and purpose is to eliminate the already present wall electric charge of discharge cell, makes it extinguish state keeping under the impulse action to be transferred to by illuminating state.As adopt burst pulse to wipe, and between twice discharge, apply positive narrow erasing pulse (about about 1 microsecond of pulse duration) at scan electrode 12, the wall electric charge of the discharge generation that it causes and the neutralization of original wall charge generation, thus discharge cell is extinguished.The high-voltage pulse that applies different sequential constitutes different driving methods.Plasma display panel of the present invention can adopt a son driving method of addressing and display separation, also can adopt Alternate Lighting of Surfaces to drive method.For example adopt son the driving method of addressing and display separation, in the preparatory stage, three of discharge cell electrodes during beginning (scan electrode 12, keep electrode 13, addressing electrode 22) are zero.Apply the full frame write pulse that amplitude is Vxw keeping electrode 8, wherein Vxw much larger than scan electrode 12, keep the firing voltage Vfxy of 13 at electrode, make screen go up all unit and all be in same state, promptly extinguish state, simultaneously apply pulse Vaw on the electrode 13 keeping, wherein Vaw is about Vxw/2, makes addressing electrode 22 not have the accumulation of wall electric charge substantially.Enter address period, keep electrode 13 making alive Vx; Sequential scanning electrode 12, the scan electrode 12 that does not scan adds-Vsc, and the scan electrode 12 of scanning adds-Vy; Meanwhile, add addressing pulse Va to lighting corresponding addressing electrode 22 with needs, what do not need brightness then adds 0V.In the unit that will light, at first discharge between addressing electrode 22 and scan electrode 12 causes in scan electrode 12 and the discharge of keeping electrode 13, accumulates the wall electric charge simultaneously.For the unit that need not light, owing to there is not addressing pulse, do not produce discharge, there is not the accumulation of wall electric charge yet.In the phase of keeping, add Vaw at addressing electrode 22, upper half is kept electrode 13 and is added 0V, scan electrode 12 adds keeps pulse Vs, and lower half is kept electrode 13 and added Vs, and scan electrode 12 adds keeps pulse 0V, under the wall charge effect, keep discharge and carry out always, discharge cell is in illuminating state, till needs are wiped.Like this display panel is lined by line scan, finish the demonstration of whole two field picture.Usually a two field picture is divided into the demonstration of plurality of sub field, all there are preparatory stage, address period in each son field and keep the phase, and the time ratio difference of the phase of keeping of each son field, with the realization gradation of image, as adopts 8 son fields, can realize that 256 grades of image gray show.In each pixel, the discharge of generation makes Ne-Xe hybrid working gas ionization, and the ultraviolet light impact fluorescence powder of generation produces visible light.In such device, the effect of protective layer on the traditional sense is played in the effect of prebasal plate diaphragm MgO film 14, and the bombardment of the ion that produces after the anti-ionization, and the MgO material has the higher secondary electron emission characteristic higher to the Ne ion simultaneously.Because the Sc that mixes
3+The MgO single grain 5 of the doping of ion; ultraviolet light peak value about very strong 250nm appears in its cathodoluminescence Spectroscopy; therefore at prebasal plate diaphragm MgO film 14 deposited crystal emission layers 5; to produce stronger exoelectron emission at discharge process; constitute the priming electronics that needs in the addressing process; counting response time in the above-mentioned addressing process is reduced; simultaneously; the peak value of this ultraviolet light 235nm of pure MgO is again shifted to 250nm; showing to have the stronger secondary electron yield to Xe ion bombardment; thereby reduce its firing voltage, improve luminous efficiency.
As shown in Figure 3, the present invention also can be mixed with three-color phosphor respectively with the MgO single grain 5 of mixing, the ratio of mixing is 5～10% of a fluorescent material weight, be produced on the inwall of pixel space 3, be made into mixed phosphor powder layer 4, all the other structures are constant, so not only can play outside the effect of above-mentioned crystal emission layer 5, the ultraviolet light that can also improve fluorescent material produces efficient, thereby improves the luminous efficiency of its visible light.
Claims (6)
1. plasma display device with the crystal emission layer, comprise the prebasal plate (1) that be arranged in parallel, metacoxal plate (2), prebasal plate (1) comprises preceding substrate glass substrate (11), scan electrode (12), keep electrode (13), front substrate medium layer (14), prebasal plate diaphragm MgO film (15), preceding substrate glass substrate (11) is gone up and is evenly arranged scan electrode (12) towards a side of metacoxal plate (2), keep electrode (13), scan electrode (12), keep electrode (13) and upward towards a side of metacoxal plate (2) front substrate medium layer (14) is set, front substrate medium layer (14) is gone up towards a side of metacoxal plate (2) and is arranged prebasal plate diaphragm MgO film (15); Metacoxal plate (2) comprises back substrate glass substrate (21), addressing electrode (22), metacoxal plate dielectric layer (23), barrier (24), the side that back substrate glass substrate (21) is gone up towards prebasal plate (1) is provided with addressing electrode (22), addressing electrode (22) is provided with metacoxal plate dielectric layer (23) towards a side of prebasal plate (1), at least two barriers (24) that be arranged in parallel between metacoxal plate dielectric layer (23) and the prebasal plate diaphragm MgO film (15), barrier (24) is vertical with prebasal plate (1) or metacoxal plate (2) respectively; Form pixel space (3) between barrier (24) and the metacoxal plate dielectric layer (23), the inwall of pixel space (3) applies phosphor powder layer (4); It is characterized in that the side that the prebasal plate diaphragm MgO film (15) between two barriers is gone up towards metacoxal plate (2) is provided with the crystal emission layer; described crystal emission layer is made up of several MgO crystal grain (5), doping S2 type ion in each MgO crystal grain (5).
2. the plasma display device of band crystal emission layer according to claim 1, it is characterized in that the above-mentioned phosphor powder layer (4) that is arranged between two barriers (24) mixes several MgO crystal grain (5), doping S2 type ion in each MgO crystal grain (5).
3. the plasma display device of band crystal emission layer according to claim 1 and 2, the doping ratio that it is characterized in that above-mentioned S2 type ion and MgO is 200ppm～1000ppm, crystallite dimension is 200nm～2mm.
4. the plasma display device of band crystal emission layer according to claim 1 and 2 is characterized in that above-mentioned S2 type ion is a kind of in the following ion set: Al
3+, Ga
3+, In
3+, Sc
3+, Nd
3+, Pr
3+, Bi
3+, Zn
2+, Cd
2+, Br
-, Cl
-, F
-And N
3-
5. the plasma display device of band crystal emission layer according to claim 1 and 2 is characterized in that above-mentioned S2 type ion is a kind of in the following ion set: Si
2+, Ge
2+, Sn
2+, As
3+And Sb
3+
6. the plasma display device of band crystal emission layer according to claim 1 and 2 is characterized in that above-mentioned S2 type ion is a kind of in the following ion set: Pb
2+Or Pr
3+
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| CN2010105806459A CN102082058A (en) | 2010-12-09 | 2010-12-09 | Plasma display parts with crystal emission layer |
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|---|---|---|---|
| CN2010105806459A CN102082058A (en) | 2010-12-09 | 2010-12-09 | Plasma display parts with crystal emission layer |
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ID=44087944
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103065914A (en) * | 2012-12-27 | 2013-04-24 | 电子科技大学 | Protective layer structure of plasma display panel (PDP) front glass plate and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080157671A1 (en) * | 2006-12-27 | 2008-07-03 | Pioneer Corporation | Plasma display panel |
| US20090102381A1 (en) * | 2007-10-18 | 2009-04-23 | Lg Electronics Inc. | Plasma display panel |
| CN101681764A (en) * | 2008-01-15 | 2010-03-24 | 松下电器产业株式会社 | Plasma display panel |
-
2010
- 2010-12-09 CN CN2010105806459A patent/CN102082058A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080157671A1 (en) * | 2006-12-27 | 2008-07-03 | Pioneer Corporation | Plasma display panel |
| US20090102381A1 (en) * | 2007-10-18 | 2009-04-23 | Lg Electronics Inc. | Plasma display panel |
| CN101681764A (en) * | 2008-01-15 | 2010-03-24 | 松下电器产业株式会社 | Plasma display panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103065914A (en) * | 2012-12-27 | 2013-04-24 | 电子科技大学 | Protective layer structure of plasma display panel (PDP) front glass plate and preparation method thereof |
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Application publication date: 20110601 |