CN102075260A - Heralded single-photon source generation device for quantum communication - Google Patents
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- 238000001514 detection method Methods 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000005611 electricity Effects 0.000 claims description 6
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- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000000630 rising effect Effects 0.000 claims description 5
- 206010003084 Areflexia Diseases 0.000 claims description 3
- 230000001960 triggered effect Effects 0.000 claims description 3
- 230000001934 delay Effects 0.000 claims description 2
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- 238000000034 method Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002096 quantum dot Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004061 bleaching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
The invention discloses a heralded single-photon source generation device for quantum communication, comprising: a clock module, a control unit, a controllable electric switch module, an electric narrow-pulse source module, an amplification module, a semiconductor laser, a numerical control variable optical attenuator, an optical coupler, an optical power detection module and a fixed optical attenuator; the optical power detection module receives a laser pulse from the optical coupler, and measures size of the laser pulse optical power; the control unit determines amount of attenuation of the variable optical attenuator according to the power detected by the optical power detection module, and transmits a control instruction to the numerical control variable optical attenuator to enable the same to reach appointed amount of attenuation. The heralded single-photon source generation device has the advantages of steady output, low complexity and easy control, and can be used for a quantum communication system.
Description
Technical field
The invention belongs to the quantum communications field, the Primary Component that relates to the quantum communication system transmitting terminal---single-photon source, present desirable single-photon source is realized relatively difficulty, experiment report is seldom only arranged, the laser that most of quantum communication system all adopts decay is as accurate single-photon source, and the present invention has designed a kind of accurate single-photon source generation device that is used for quantum communications.
Background technology
Quantum communications are forward position cross disciplines that communication theory and quantum mechanics combine and produces, since BB84 agreement in 1984 is born, the quantum communications development is very swift and violent, caused the great attention of academia, business circles and the defense sector of countries in the world, become the focus of research, and will form huge industry.The maximum characteristics of quantum communications are its unconditional security that has and high efficiency, and its concrete working method has: (1) is based on the quantum secret communication of quantum key distribution; (2) quantum dense coding; (3) the stealthy attitude that passes of quantum; (4) Quantum Secure Direct Communication; (5) quantum secret sharing; (6) based on quantum cryptography algorithm quantum secret communication etc.
The carrier of quantum information has a variety of, and what the most easily be implemented surely belongs to based on single photon pulses or entangled photons beared information, communicates by letter because the optical fiber link of classical communication can be used to carry out light quantum with device.The experiment progress of the quantum secret communication of two user's point-to-points is very fast, and some enterprises such as Switzerland Id-quantique company have carried out small-scale commercialization.
Single-photon source is the important devices of quantum communication system.The generation scheme of single photon has at present: CdSe (ZnS) nano particle, quantum dot single-photon source and the laser damped method of monatomic laser, individual molecule laser, the laser based on fault in material, revolving door single photon device, water-soluble core shell structure.In the above-mentioned various scheme, the shortcoming of monatomic laser is the tolerance of single atom and obtains difficulty, also rare photon to suitable communication band, and need harsh cooling condition; The advantage of individual molecule laser is to carry out at ambient temperature, can realize at present from ultraviolet as researcher's dopant dye molecule in liquid crystal of Rochester university, having realized single photon emission to infrared photo emissions, the shortcoming of this kind material is a less stable, has the bleaching problem; The speed ratio of launching based on the laser photon of fault in material is lower, has limited its photon transmission speed; Revolving door single photon device can be realized single photon emission in theory, is based on that the tunnel effect in electronics and hole realizes under AC drive voltage, but the extremely low temperature of this Technology Need; It is flexible that the CdSe of water-soluble core shell structure (ZnS) nano particle has synthesis mode, advantage such as wavelength-tunable, size shape are controlled, low cost and be widely used in biology, luminous demonstration and optical communication field.Because the Auger effect in the nano particle causes many excitons to be transmitted in cancellation in the picosecond range, makes it be used for single photon emission and has obstacle; Quantum dot single-photon source can stably send single photon stream, each photon can be separated by spectral filter, compare with other single-photon sources, quantum dot single-photon source has high oscillator strength, narrow breadth of spectrum line, and light can not take place to fade, the single-photon source of quantum-dot structure is considered to the most potential a kind of single-photon source, but also have a lot of difficult problems will go to solve now, as the homogeneity control of size, shape, monochromaticjty control, biexction modulation and emission characteristics thereof, single photon coding and detection of spectrum or the like; The laser damped method is present the most frequently used single photon production method, by accurately laser being carried out overdamp, makes each average pulse number of photons less than 0.1, thereby obtains accurate single-photon source.
By last analysis as seen, in quantum communication system, desirable single-photon source is very difficult to preparation, often by narrow laser pulse is decayed to obtain accurate single-photon source.And the narrow laser pulse of 1550nm wavelength normally directly drives the semiconductor laser generation by narrow electric pulse.For quantum communication system, stable laser pulse is most important to fail safe, stability and the performance of system, and does not see the report that guarantees accurate single-photon source stability in the present open report.
Secondly, in various pulse shaping technology, comparatively generally adopting with high-speed separation element such as avalanche diode, tunnel diode etc. is core, in conjunction with the pulse generation technique of microstrip circuit.The pulse signal main feature of utilizing this technology to generate is exactly pulse width (reaching 110ps), but the shortcoming of this method is to be difficult to control impuls width and repetition rate, can not be used for quantum communication system.
Summary of the invention
The object of the invention is to avoid the shortcoming of above-mentioned prior art, proposes a kind of accurate single-photon source generation device that is used for quantum communications, realize stable, pulsewidth less than 1 nanosecond, average photon number less than 0.1 accurate single-photon source.
For achieving the above object, the present invention is by the following technical solutions:
A kind of accurate single-photon source generation device that is used for quantum communications comprises: clock module, control unit, controllable electrical switches module, electric burst pulse source module, amplification module, semiconductor laser, numerical control variable optical attenuator, optical coupler, luminous power detection module and fixed optical attenuator;
Described clock module produces rectangular pulse, in order to trigger described electric burst pulse source; Described electricity is narrow to be triggered towards the clock signal of source module by described clock module, produces burst pulse; Described amplification module is amplified to described burst pulse can the required amplitude of direct-drive semiconductor laser; Described semiconductor laser receives the narrow pulse signal that amplifies through amplification module, at the driving modulated output laser pulse of this signal; Described numerical control variable optical attenuator receives the control command from control unit, regulates its attenuation; Described optical coupler a part of laser pulse that is coupled is given described luminous power detection module and is measured; Described luminous power detection module receives described laser pulse from optical coupler, measures the size of this laser pulse luminous power; Described control unit is determined the attenuation of numerical control variable attenuator according to the power that the luminous power detection module measures, and sends control command to the numerical control variable attenuator, makes it to reach the attenuation of appointment.
Described accurate single-photon source generation device, it is narrow towards source module that the rising edge clock signal of clock module triggers described electricity.
Described accurate single-photon source generation device, described amplification module is a wide-band amplifier, bandwidth is 0-2GHz.
Described accurate single-photon source generation device, described amplification module is amplified to described burst pulse greater than 1V.
Described accurate single-photon source generation device, described electric burst pulse source module comprises: delay circuit 1, delay circuit 2, level shifting circuit, d type flip flop, impedance inverter circuit; 1 pair of clock signal of described delay circuit is carried out nanosecond time-delay d1,2 pairs of clock signals of described delay circuit d2 that delays time, and d2>d1, d2 and d1 differed less than 1 nanosecond; Described level shifting circuit is converted to the ECL level with Transistor-Transistor Logic level, adapts to high speed circuit; Described d type flip flop has reseting port; Described impedance inverter circuit transforms to the input impedance of amplification module with the output impedance of d type flip flop, realizes the areflexia coupling.
The present invention has following advantage:
(1) the present invention is owing to adopted luminous power detection module and numerical control variable optical attenuator, can adjust the attenuation of numerical control variable optical attenuator according to detected luminous power self adaptation, the average photon number of each laser pulse has overcome the unfavorable factor that laser output pulse rises and falls with external environments such as temperature less than 0.1 behind the feasible process fixed optical attenuator.
(2) the electric burst pulse source module that proposes of the present invention can produce the burst pulse less than 1ns, and pulse duration and repetition rate are easy to control.In addition, implementation method is simple, has reduced the complexity of subscriber equipment.
Description of drawings
The composition frame chart of Fig. 1 accurate single-photon source of the present invention;
Fig. 2 electric burst pulse module composition frame chart of the present invention;
Pulse combiner circuit sequential chart in Fig. 3 electric burst pulse module of the present invention.
Embodiment
Embodiment 1
With reference to Fig. 1, accurate single-photon source of the present invention comprises clock module, control unit, controllable electrical switches module, electric burst pulse source module, amplification module, semiconductor laser, numerical control variable optical attenuator, optical coupler, luminous power detection module and fixed optical attenuator.
This clock module produces rectangular pulse, triggers electric burst pulse source with its rising edge, determines the operating frequency of clock module according to the pulse repetition frequency of required accurate single-photon source, and clock is selected crystal oscillator for use.
This controllable electrical switches module is opened under the instruction of control unit or is closed, and the clock of opening back clock module generation can be by going to trigger electric burst pulse source module, and the clock that stops clock module to produce when closing passes through.
This electricity is narrow to be triggered towards the rising edge clock of source module by clock module, produces the electric burst pulse less than 1ns.
This amplification module is wide-band amplifier (bandwidth can be 0-2GHz), and electric burst pulse is amplified to can the required amplitude (getting final product greater than 1V) of direct-drive semiconductor laser.
This semiconductor laser receives the narrow pulse signal that amplifies through amplification module, and at the driving modulated output pulse laser of this signal, the live width of this semiconductor laser is the smaller the better, and frequency stability is high more good more.
This numerical control variable optical attenuator receives the control command from control unit, regulates its attenuation, and trimming precision reaches 0.1dB.
Optical coupler a part of laser pulse that is coupled is given the luminous power detection module and is measured, and the degree of coupling is chosen arbitrarily.
The luminous power detection module receives the laser pulse from optical coupler, measures the size of this laser pulse luminous power; Resolution reaches 0.01dBm.
Control unit includes the parameter list of customization in advance, its content is the corresponding relation tabulation between " detected power-attenuation ", method for customizing is: at accurate single-photon source output order photon detector, if pulse frequency is F, the detection efficient of single-photon detector is Y, the digit rate of calculating mentally of single-photon detector is D, the transfer rate of fiber channel is T, the every average pulse number of photons that requires is 0.1, observe detected power, regulate and the record attenuation, the counting of single-photon detector is remained on [1-(1-D) * exp (0.1*T*Y)] * F, with the corresponding attenuation of fluctuating record of detected power.
The power that control unit measures according to the luminous power detection module, look into the parameter list of customization in advance, determine the attenuation of numerical control variable attenuator, send control command to the numerical control variable attenuator, make it to reach the attenuation of appointment, thereby guarantee to arrive the power stability of fixed attenuator input, make the average photon number in each final laser pulse reach designated value (0.1 or littler).
In addition, this control unit is also selected to trigger different electric burst pulse sources by gate-controlled switch, can be used for based on the quantum communication system of inveigling attitude.
Fixed optical attenuator is further decayed to laser pulse and is produced average photon number less than 0.1 accurate single photon pulses, Insertion Loss 60dB.
Embodiment 2
With reference to Fig. 2, electric burst pulse source module utilizes the asynchronous triggering signal of high-speed figure device output multichannel, utilizes the logical relation between these triggering signals to come the synthesis of narrow pulse again.This electricity burst pulse module comprises: delay circuit 1, delay circuit 2, level shifting circuit, d type flip flop, impedance inverter circuit.1 pair of outside trigger impulse of this delay circuit carries out nanosecond time-delay d1, and 2 pairs of external pulses of this delay circuit are delayed time, and (d2>d1), d2 and d1 differ less than 1 nanosecond (ns) d2.This level shifting circuit is ECL (Emitter Couple Logic, an emitter-coupled logic) level with TTL (Transistor-Transistor Logic, transistor-transistor logic) level conversion, adapts to high speed circuit.This d type flip flop has reseting port (Reset), is high speed device.This impedance inverter circuit transforms to the input impedance of amplification module with the output impedance of d type flip flop, realizes the areflexia coupling.
The basic principle of described electric burst pulse source module is as follows: the external trigger pulse is by two-way precision time delay circuit, delay circuit is delayed time respectively to this external pulse, triggering signal as d type flip flop, utilize the rising edge or the pulse of trailing edge signal synthesis of narrow of triggering signal, according to the needs that use, pulse signals such as amplifies at corresponding the processing again.
The D of d type flip flop holds a disposed upright high level, delay pulse 1 connects clock CLK end, delay pulse 2 connects the Reset end, the pulse spacing of two time-delays is very short, high level is firm to be dragged down immediately once exporting, the pulse that can obtain synthesizing from Q end like this, the width of pulse are time delay poor of two-way triggering signal, and the sequential of this process as shown in Figure 3.
With reference to Fig. 2, impedance conversion realizes the output of d type flip flop and the input coupling of amplifier.Amplification module amplifies the burst pulse of electric burst pulse source module output, and the narrow pulse signal after the amplification drives semiconductor laser.The width of burst pulse depends on the delay inequality of two-way delay circuit to the source pulse, and repetition rate then depends primarily on the frequency of active crystal oscillator.As seen, the key of whole pulse combiner circuit is on the two-way delay circuit, and its delay precision, time-delay step value have determined the width and the adjustable accuracy of composite pulse.
Should be understood that, for those of ordinary skills, can be improved according to the above description or conversion, and all these improvement and conversion all should belong to the protection range of claims of the present invention.
Claims (5)
1. accurate single-photon source generation device that is used for quantum communications, it is characterized in that, comprising: clock module, control unit, controllable electrical switches module, electric burst pulse source module, amplification module, semiconductor laser, numerical control variable optical attenuator, optical coupler, luminous power detection module and fixed optical attenuator;
Described clock module produces rectangular pulse, in order to trigger described electric burst pulse source; Described electricity is narrow to be triggered towards the clock signal of source module by described clock module, produces burst pulse; Described amplification module is amplified to described burst pulse can the required amplitude of direct-drive semiconductor laser; Described semiconductor laser receives the narrow pulse signal that amplifies through amplification module, directly modulates output laser pulse under the driving of this signal; Described numerical control variable optical attenuator receives the control command from control unit, regulates its attenuation; Described optical coupler a part of laser pulse that is coupled is given described luminous power detection module and is measured; Described luminous power detection module receives the laser pulse from described optical coupler, measures the size of this laser pulse luminous power; Described control unit is determined the attenuation of numerical control variable attenuator according to the power that the luminous power detection module measures, and sends control command to the numerical control variable attenuator, makes it to reach the attenuation of appointment.
2. accurate single-photon source generation device according to claim 1 is characterized in that it is narrow towards source module that the rising edge clock signal of clock module triggers described electricity.
3. accurate single-photon source generation device according to claim 1 is characterized in that described amplification module is a wide-band amplifier, and bandwidth is 0-2GHz.
4. accurate single-photon source generation device according to claim 1 is characterized in that described amplification module is amplified to described burst pulse greater than 1V.
5. accurate single-photon source generation device according to claim 1 is characterized in that, described electric burst pulse source module comprises: delay circuit 1, delay circuit 2, level shifting circuit, d type flip flop, impedance inverter circuit; 1 pair of clock signal of described delay circuit is carried out nanosecond time-delay d1,2 pairs of clock signals of described delay circuit d2 that delays time, and d2>d1, d2 and d1 differed less than 1 nanosecond; Described level shifting circuit is converted to the ECL level with Transistor-Transistor Logic level, adapts to high speed circuit; Described d type flip flop has reseting port; Described impedance inverter circuit transforms to the input impedance of amplification module with the output impedance of d type flip flop, realizes the areflexia coupling.
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CN104506308A (en) * | 2014-12-23 | 2015-04-08 | 上海朗研光电科技有限公司 | Method and device for manufacturing external modulation high-speed decoy-state quantum light sources |
WO2016062059A1 (en) * | 2014-10-21 | 2016-04-28 | 中兴通讯股份有限公司 | Optical module and optical module inputting optical power adjustment method |
CN111313226A (en) * | 2020-02-21 | 2020-06-19 | 国开启科量子技术(北京)有限公司 | High-speed driving method and device for quantum communication high-extinction-ratio narrow-pulse light source |
CN113794555A (en) * | 2021-09-09 | 2021-12-14 | 广西大学 | Silicon-based integrated quantum decoy state intensity modulation module and method |
CN114448520A (en) * | 2020-11-06 | 2022-05-06 | 科大国盾量子技术股份有限公司 | Light intensity control method and device for stably outputting extremely weak light and quantum key distribution equipment |
EP4224782A1 (en) * | 2022-02-07 | 2023-08-09 | Aegiq Ltd | Free space quantum key distribution |
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WO2016062059A1 (en) * | 2014-10-21 | 2016-04-28 | 中兴通讯股份有限公司 | Optical module and optical module inputting optical power adjustment method |
CN105591701A (en) * | 2014-10-21 | 2016-05-18 | 中兴通讯股份有限公司 | Optical module and method for adjusting input optical power of optical module |
CN104506308A (en) * | 2014-12-23 | 2015-04-08 | 上海朗研光电科技有限公司 | Method and device for manufacturing external modulation high-speed decoy-state quantum light sources |
CN111313226A (en) * | 2020-02-21 | 2020-06-19 | 国开启科量子技术(北京)有限公司 | High-speed driving method and device for quantum communication high-extinction-ratio narrow-pulse light source |
CN114448520A (en) * | 2020-11-06 | 2022-05-06 | 科大国盾量子技术股份有限公司 | Light intensity control method and device for stably outputting extremely weak light and quantum key distribution equipment |
CN114448520B (en) * | 2020-11-06 | 2023-12-05 | 科大国盾量子技术股份有限公司 | Light intensity control method and device for stably outputting extremely weak light and QKD (quantum key distribution) equipment |
CN113794555A (en) * | 2021-09-09 | 2021-12-14 | 广西大学 | Silicon-based integrated quantum decoy state intensity modulation module and method |
EP4224782A1 (en) * | 2022-02-07 | 2023-08-09 | Aegiq Ltd | Free space quantum key distribution |
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