CN102074649A - Access memory devices, MRAM cell and manufacturing methods thereof - Google Patents
Access memory devices, MRAM cell and manufacturing methods thereof Download PDFInfo
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
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- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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Abstract
The present disclosure relates generally to an access memory devices, a magnetic random access memory (MRAM) cell and manufacturing methods thereof. Apparatus and methods are disclosed herein for a reverse-connection spin torque transfer (STT) magnetic tunnel junction (MTJ) element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).
Description
Technical field
The present invention relates to a kind of magnetic RAM (MRAM) device, relate in particular to the memory cell and the manufacture method thereof of a kind of storage arrangement, magnetic RAM, spin moment conversion (STT) is write in order to data.
Background technology
Magnetic RAM (MRAM) is a non-volatile memory technologies, and it uses the data of magnetization with the expression storage.Generally speaking, MRAM comprises that a plurality of magnetic memory cells are in an array.Each memory cell is represented a bit of data basically.What comprised in memory cell is magnetic component.One magnetic component can comprise two ferromagnetism " plate " (perhaps in the suprabasil material layer of semiconductor), has a relative direction of magnetization (perhaps magnetic moment position to) respectively.Described two ferromagnetic plates are isolated by a thin nonmagnetic layer.
More particularly, a MRAM element is normally based on magnetic tunnel knot (MTJ) element.One MTJ element comprises at least three basic layers: one " free layer ", worn tunnel barrier layer and " fixed bed ".This free layer and fixed bed are ferromagnetic layer; This wears the tunnel barrier layer is a thin separator, between this free layer and fixed bed.The direction of magnetization of this free layer can rotate freely, but is subjected to the restriction of the physical size of this layer, only points to one of both direction; The direction of magnetization of this fixed bed is to be fixed in a specific direction.One bit writes in one of above-mentioned both direction by the direction of magnetization of this free layer of location.Relying on this free layer and fixed bed magnetic moment the position to, the resistance of this MTJ element will change thereupon.Therefore, by the resistance that determines this MTJ element, this bit can be read.When the direction of magnetization of this free layer and fixed bed is parallel, and magnetic moment has identical polarity chron, and the resistance of this MTJ element is low resistance state.Basically, this is expressed as " 0 ".When the direction of magnetization of this free layer and fixed bed is an antiparallel, and magnetic moment has opposite polarity chron, and the resistance of this MTJ element is high-impedance state.Basically, this is expressed as " 1 ".
Spin moment conversion (STT) (being also referred to as spin conversion switching or spin transition effects) is one of the technology that writes of MTJ storage element ` spare.The STT technological concept is based on when a spin polarized current (in the electric current most electron spin towards identical position to) and imposes on a free ferromagnetic layer, and described electronics can be converted to its electronic angular momentum this free layer, to switch the direction of magnetization of this free layer.The advantage of using STT to write magnetic element comprises less bit size and lower write current demand.Yet in STT, the required direction of magnetization with the MTJ element is that 20-50% is greater than switch to the required switch current of parastate from antiparallel from the parallel required switch current of antiparallel state that switches to.What is more, in a traditional STTMTJ element, bigger parallelly be subject to " source-electrode degradation " effect or be " load of source electrode position " effect to the antiparallel switch current.This source-electrode degradation effect restriction electric current total amount of MTJ element of flowing through, and can hinder this MTJ element switch reliably the direction of magnetization from antiparallel to parastate.In view of this, industry is badly in need of a kind of STT MTJ element, is not limited to the source-electrode degradation effect, walks to antiparallel state really to make this MTJ element switch direction of magnetization self-balancing reliably.
Summary of the invention
At the device and method that this disclosed is the reverse connection STT MTJ element of a MRAM, when antiparallel state is walked in the direction of magnetization self-balancing of switching this MTJ element, in order to overcome the source-electrode degradation effect.
Embodiments of the invention provide a kind of memory cell of magnetic RAM, comprising: one switches element, comprises one source pole, a grid and a drain electrode; And a magnetic tunnel knot element, comprise a free layer, a fixed bed and a separator, wherein this separator is folded between this free layer and this fixed bed; Wherein the free layer of this magnetic tunnel knot element is connected with the drain electrode of this switching device, and the fixed bed of this magnetic tunnel knot element is connected with a bit line, and the grid of this switching device is connected with a character line, and the source electrode of this switching device is connected with a sense wire.
Embodiments of the invention provide a kind of manufacture method of memory cell of magnetic RAM in addition, comprising: form a substrate; Form one and switch element, this switching device comprises one source pole zone, an active region and a drain region; Form magnetic tunnel knot element, this magnetic tunnel knot element comprises a free layer, a fixed bed and a separator, and wherein this separator is folded between this free layer and this fixed bed; Connect this source region to one sense wire; Form a writing line to control this switching device by this active region; Connect the free layer of this drain region to this magnetic tunnel knot element; And fixed bed to the bit line that connects this magnetic tunnel knot element.
Embodiments of the invention provide a kind of storage arrangement again, comprising: a memory cell comprises: a substrate; One switches element, comprises one source pole zone, an active region and a drain region; One magnetic tunnel knot element comprises a free layer, a fixed bed and a separator, and wherein this separator is folded between this free layer and this fixed bed; One sense wire is connected to this source region; One writing line is to control this switching device by this active region; And a bit line, be connected to the fixed bed of this magnetic tunnel knot element; Wherein the current carrying capacity of this memory cell becomes the required electric current of the direction of magnetization that is parallel to this fixed bed greater than the direction of magnetization of switching this free layer, and becomes the required electric current of the direction of magnetization that is antiparallel to this fixed bed greater than the direction of magnetization of switching this free layer.
The MTJ element of reverse connection of the present invention uses the low I of this memory cell
MTJAbility causes the source-electrode degradation effect to I
MTJ(AP → P) influence is not severeer, and possesses higher I
MTJAbility is in response to strict I
MTJ(the demand of P → AP).
For the present invention can be become apparent, embodiment cited below particularly, and cooperate appended accompanying drawing, be described in detail below:
Description of drawings
Fig. 1 shows the memory cell of a magnetic RAM (MRAM);
Fig. 2 shows the electric current I of the MTJ element 100 of the Fig. 1 that flows through
MTJBe V
MTJThe schematic diagram of function;
Fig. 3 shows that the memory cell according to the MRAM of the embodiment of disclosed one or more has the schematic diagram of the MTJ element of reverse connection;
Fig. 4 shows that the memory cell according to Fig. 3 of the embodiment of disclosed one or more has the V of the MTJ element of reverse connection
MTJ/ I
MTJThe characteristic relation schematic diagram;
Fig. 5 shows that first mram memory cell according to the embodiment of disclosed one or more has the generalized section of MTJ element of the reverse connection of Fig. 3; And
Fig. 6 shows that second mram memory cell 600 according to the embodiment of disclosed one or more has the generalized section of MTJ element of the reverse connection of Fig. 3.
Wherein, description of reference numerals is as follows:
100～MTJ element;
102～fixed bed;
104～separator;
106～free layer;
110～switching device;
120～bit line BL;
130～character line WL;
140～sense wire SL;
301-313～curve;
500～the first mram memory cells;
501,601～active region;
502,602～gate insulator;
510,610～source region;
520,620～drain region;
530,630～sense wire SL;
540,640～character line WL;
550,650～bit line BL;
560,660～oppositely MTJ elements of connection;
561,661～free layer;
562,662～separator;
563,663～fixed bed;
570,670～contact layer CT;
581,681～the first metal layer M1;
582～the second metal level M2;
583～the 3rd metal level M3;
584～the 4th metal level M2;
591～the first via V1;
592～the second via V2;
593～the 3rd via V3;
600～the second mram memory cells.
Embodiment
Below describe and be accompanied by the example of description of drawings in detail with each embodiment, as reference frame of the present invention.In accompanying drawing or specification description, similar or identical part is all used identical Reference numeral.And in the accompanying drawings, the shape of embodiment or thickness can enlarge, and to simplify or convenient the sign.In addition, the part of each element will be it should be noted that to describe explanation respectively in the accompanying drawing, not shown or describe element is the form known to those of ordinary skills, in addition, only for disclosing the ad hoc fashion that the present invention uses, it is not in order to limit the present invention to certain embodiments.
Fig. 1 shows the memory cell of a magnetic RAM (MRAM).Described memory cell comprises a magnetic memory for example a MTJ element 100 and a switching element 110.This MTJ element 100 comprises that a fixed bed 102, wears tunnel barrier layer or a separator 104 and a free layer 106.The direction of magnetization of free layer 106 can rotate freely sensing one or both direction, and can use spin moment conversion (spin-torque transfer is called for short STT) to switch.For fixed bed 102, can use an antiferromagnetic layer to magnetize in specific direction with fixing or pinning.This separator 104 is for being folded between free layer 106 and the fixed bed 102.This free layer 106 is connected to a bit line (bit line is called for short BL) 120, provides this free layer one voltage in the process in writing or reading.This fixed bed 102 is connected to the drain electrode of this switching device 110.
This switching device 110 is applicable to and reads or write this MTJ element 100.The embodiment of this switching device 110 comprises a metal-oxide semiconductor (MOS) (MOS) transistor, a MOS diode and/or a bipolar transistor.The grid of this switching device 110 is connected to a character line (word line is called for short WL) 130, in writing or read this memory cell of activation in the process.The source electrode of this switching device 110 is connected to a sense wire (sense line is called for short SL) 140, in writing or read in the process, when memory cell is activated by character line 130, with this fixed bed 102 of a driven.
Data in this MTJ element 100 can be represented with respect to the direction of magnetization of this fixed bed 102 by this free layer 106.Parallel when being magnetized to of this free layer and this pinning layer, and magnetic moment has identical polarity chron, and the resistance of this MTJ element is low resistance state.Basically, this is expressed as " 0 ".When the direction of magnetization of this free layer and fixed bed is an antiparallel, and magnetic moment has opposite polarity chron, and the resistance of this MTJ element is high-impedance state.Basically, this is expressed as " 1 ".
Spin moment conversion (STT) is for writing one of technology of MTJ memory element by the magnetic moment that switches free layer 106.The voltage of crossing over this MTJ element 100 to this fixed bed 102 by this free layer 106 can be expressed as V
MTJDesire to write " 0 " in MTJ element 100, V
MTJFor being subjected to positive bias, cause this free layer 106 to be under the positive voltage state with respect to this fixed bed 102.Can be pressed on bit line BL 120 and implement by applying a positive electricity, with sense wire SL 140 ground connection, and by character line WL 130 these switching devices 110 of activation.
For example, the magnetic moment of this free layer 106 supposes that its initial state is the magnetic moment that is antiparallel to this fixed bed 102, and causing this MTJ element 100 is to be under the one state.For the magnetic moment that switches this free layer 106 becomes the magnetic moment that is parallel to this fixed bed 102, a positive voltage is imposed leap V
MTJDescribed positive V
MTJCause conduction electron to move towards this free layer 106 from fixed bed 102.Most electronics moves towards this free layer 106 from fixed bed 102 and makes spin polarization in identical direction, as the magnetic moment of fixed bed 102.Since the direction of magnetization of this MTJ element 100 be initialized as antiparallel, this spin angular momentaum is also for being antiparallel to the magnetic moment of this free layer 106.At the interface near this free layer 106 and this separator 104, the magnetic moment reciprocation of these electronics and this free layer 106.And because this reciprocation, these electronics are converted to this free layer 106 with its spin angular momentaum.If V
MTJEnough just, the convertible enough angular momentums of conduction electron that sufficient amount is then arranged make it be parallel to the magnetic moment of this fixed bed 102 to this free layer 106 with the magnetic moment that switches this free layer 106.
Fig. 2 shows the electric current I of the MTJ element 100 of the Fig. 1 that flows through
MTJBe V
MTJThe schematic diagram of function.If the init state of this MTJ element 100 is to be in one state, then the resistance of MTJ element 100 is high-impedance state.Impose a positive V when little by little increasing
MTJ, electric current I then
MTJCan increase, along the curve 301 of one state in the right upper quadrant of Fig. 2.Work as V
MTJDuring the point of arrival 302, conduction electron just has enough angular momentums and is converted to this free layer 106, and this MTJ element 100 is switched to " 0 " state from one state.The magnetic moment of this free layer 106 becomes the magnetic moment that is parallel to this fixed bed 102, and the resistance of this MTJ element 100 is reduced to low resistance state by high-impedance state.Therefore, electric current I
MTJRise to " 0 " condition curve 304 along 303.Described electric current I
MTJThe magnetic moment of this free layer 106 is switched to the magnetic moment that is antiparallel to this fixed bed 102, and signable is I
MTJ(AP → P).Typical I
MTJ(scope of AP → P) is within 100-200 μ A.Along with V
MTJContinue low increase, this I
MTJCan increase along " 0 " condition curve 304.On the contrary, along with V
MTJReduce this I
MTJCan reduce along " 0 " condition curve 304.
Desire to write " 1 " in MTJ element 100, V
MTJFor being subjected to positive bias.For example, the initial state of this MTJ element is to be under " 0 " state, and the magnetic moment of this free layer 106 is the magnetic moment that is parallel to this fixed bed 102, a negative voltage is imposed cross over V
MTJTo write " 1 " in MTJ element 100.The mode of implementing can apply a positive electricity and be pressed on sense wire SL 140 ground connection by with bit line BL 120 ground connection, and by character line WL 130 these switching devices 110 of activation.Described negative V
MTJCause conduction electron to move towards this fixed bed 102 from free layer 106.Most electronics moves from free layer 106, has spin polarization in identical direction, as the magnetic moment of free layer 106.These electronic spin angular momentums also are parallel to the magnetic moment of this fixed bed 102.Yet most electronics has the magnetic moment that spin polarization is antiparallel to this free layer 106 and fixed bed 102.This most electronics can reflect from this fixed bed 102, and is back to this free layer 106.At the interface near this free layer 106 and this separator 104, the magnetic moment reciprocation of the electronics of these reflections and this free layer 106.And because this reciprocation, these electronics are converted to this free layer 106 with the part of its spin angular momentaum.If V
MTJEnough negative, the convertible enough angular momentums of conduction electron that sufficient amount is then arranged make it be antiparallel to the magnetic moment of this fixed bed 102 to this free layer 106 with the magnetic moment that switches this free layer 106.
Please consult Fig. 2 again, the init state of this MTJ element 100 is to be in " 0 " condition curve 304, and the resistance of representing this MTJ element 100 is low resistance state.Impose a negative V when little by little increasing
MTJ, electric current I then
MTJCan be added in the left lower quadrant of Fig. 2 along the curve 304 of " 0 " state.Work as V
MTJDuring the point of arrival 305, most conduction electron has the magnetic moment that spin polarization is antiparallel to this free layer 106, just has enough angular momentums and is converted to this free layer 106, and this MTJ element 100 is switched to one state from " 0 " state.The magnetic moment of this free layer 106 becomes the magnetic moment that is antiparallel to this fixed bed 102, and the resistance of this MTJ element 100 rises to high-impedance state by low resistance state.Therefore, electric current I
MTJDrop to one state curve 301 along 306, it represents that this MTJ element 100 is in high-impedance state.Described electric current I
MTJThe magnetic moment of this free layer 106 is switched to anti-parallel direction from parallel direction, and signable is I
MTJ(P → AP).I
MTJ(P → AP) be generally 20-50% is higher than I
MTJ(AP → P), typical I
MTJ(scope of P → AP) is within 200-300 μ A.
In view of this, for MTJ element 100 is switched to one state from " 0 " state, can be with V
MTJApply back bias voltage.Memory cell in Fig. 1, this free layer 106 is connected to bit line BL 120, and this fixed bed 102 is connected to the drain electrode of this switching device 110.Described negative V
MTJCause these switching device 110 drive currents from extremely drain electrode of source electrode (SL 140).Yet a kind of known phenomenon is called " source-electrode degradation " effect, limits this switching device 110 available magnitudes of current.
Please consult Fig. 2 again, the I of the memory cell of curve 310 presentation graphs 1
MTJAbility and V
MTJFunctional relation, work as V
MTJBe subjected to back bias voltage with the magnetic moment that switches this free layer 106 from parallel direction to anti-parallel direction.The I of curve 311 these memory cell of expression
MTJAbility and V
MTJFunctional relation, work as V
MTJBe subjected to positive bias with the magnetic moment that switches this free layer 106 from anti-parallel direction to parallel direction.Based on the source-electrode degradation effect, the I of curve 310
MTJAbility is with respect to the I of curve 311
MTJAbility reduces.Also promptly, work as V
MTJThe direction bias voltage of being born switches " 0 " state to one state, the supported maximum I of this memory cell
MTJBe lower than and work as V
MTJBe subjected to positive direction bias voltage to switch one state to " 0 " state, the supported maximum I of this memory cell
MTJYet, when switching " 0 " state to one state, this I
MTJAbility must be higher than supports higher I
MIJ(the demand of P → AP).As shown in Fig. 2 left lower quadrant, the I of the decline of curve 310
MTJAbility may be not enough to support I
MTJ(P → AP) to switch this MTJ element 100.Therefore, this memory cell also can't switch to " 0 " state from one state reliably.
Fig. 3 shows that the memory cell according to the MRAM of the embodiment of disclosed one or more has the schematic diagram of the MTJ element of reverse connection.This memory cell comprises that also a MTJ element 100 and switches element 110.Yet this free layer 106 is connected to the drain electrode of this switching device 110 now, and this fixed bed is connected to bit line BL 140.The grid of this switching device 110 still is connected to character line WL 130, and this source electrode still is connected to sense wire SL 140.Therefore, Fig. 3 connects this free layer 106 and fixed bed 102 modes just in time the connected mode with the memory cell of Fig. 1 is opposite.
Desire to write " 0 " in this MTJ element 100 that oppositely connects, V
MTJFor being subjected to positive bias, by with bit line BL 120 ground connection, applying a positive electricity and be pressed on sense wire SL 140, and activate this switching device 110 by character line WL130.On the contrary, desire to write " 1 " in this MTJ element 100 that oppositely connects, V
MTJFor being subjected to back bias voltage, be pressed on bit line BL 120 by applying a negative electricity, with sense wire SL 140 ground connection, and by character line WL 130 these switching devices 110 of activation.
Fig. 4 shows that the memory cell according to Fig. 3 of the embodiment of disclosed one or more has the V of the MTJ element of reverse connection
MTJ/ I
MTJThe characteristic relation schematic diagram.The flow through electric current I of this MTJ element 100
MTJBe V
MTJFunctional relation can be expressed as " 0 " condition curve 304 and one state curve 301, be equal to " 0 " condition curve 304 and the one state curve 301 of Fig. 2.Similarly, I
MTJ(P → AP) and I
MTJ(demand of AP → P) is as characteristic shown in Figure 2.Yet because the kenel of the MTJ element 100 that should oppositely connect, when switching " 0 " state to one state, electric current can be flowed through this MTJ element 100 and this switching device 110 to sense wire SL 140 from bit line BL 120.The sense of current that the MTJ element of Fig. 4 is switched to one state from " 0 " state is identical from the sense of current that " 0 " state switches to one state with the MTJ element of Fig. 1.Therefore, when switching from anti-parallel direction to parallel direction, memory cell has the I of the MTJ element of reverse connection
MTJThe memory cell of ability and Fig. 1 will be switched the I from parallel direction to anti-parallel direction
MTJAbility is identical.
Shown in the left lower quadrant among Fig. 4, curve 312 expression memory cell have the I of the MTJ element of reverse connection
MTJAbility switches to the antiparallel attitude with the magnetic moment of this free layer 106 from parallel state.Curve 312 has identical characteristic with the curve 311 of Fig. 2.Can be observed the I of curve 312
MTJAbility does not suffer the source-electrode degradation effect.In view of this, the MTJ element of this memory cell with reverse connection can be supported higher I
MTJ(P → AP) requirement, and this memory cell can switch to one state from " 0 " state reliably.
On the contrary, when with the MTJ element 100 of Fig. 3 when one state switches to " 0 " state, electric current can be flowed through this switching device 110 to bit line BL 120 from sense wire SL 140.This sense of current with the memory cell of Fig. 1 is switched to one state from " 0 ".The curve 313 expression memory cell of Fig. 4 have the I of the MTJ element of reverse connection
MTJAbility switches to parallel state with the reflexive parallel state of the magnetic moment of this free layer 106.Curve 313 has identical characteristic with the curve 310 of Fig. 2.Therefore, the I of curve 313
MTJAbility suffers the source-electrode degradation effect as curve 310.Yet, based on I
MTJ(requirement of AP → P) is not stricter, and observable is the I of curve 313
MTJAbility still can be supported I
MTJ(AP → P) shown in the right upper quadrant of Fig. 4.Therefore, the MTJ element of described memory cell with reverse connection still can switch to " 0 " state from one state reliably.
In view of this, with respect to the memory cell of Fig. 1, the MTJ element 100 that the memory cell of Fig. 3 has a reverse connection will be led because of in the lower I of source-electrode degradation effect
MTJAbility applies to more undemanding I
MTJ(requirement of AP → P), and to more harsh I
MTJ(P → AP) requirement still keeps higher I
MTJAbility.As shown in Figure 4, one state, " 0 " state of curve 304, this I of the whole binding curve 301 of disclosed embodiment
MTJ(AP → P) and I
MTJ(P → AP) in I
MTJPower curve 312 and 313 helps to guarantee that this MTJ element 100 can switch reliably between two directions.
The bit value that the memory cell of Fig. 3 is stored is represented by the direction of magnetization of this MTJ element 100, can read electric current by measurement, is determined by the resistance of this MTJ element 100.Read the metering system of electric current and can open this switching device 110 to bit line BL 120 and by character line WL 130 by imposing a voltage.When the magnetic moment of this free layer 106 when being parallel, also promptly when MTJ element 100 storage " 0 " bits, the resistance of this MTJ element 100 is low resistance state.Measuring electric current can be higher shown in " 0 " condition curve 304 of Fig. 4.Relatively, when the magnetic moment of this free layer 106 was antiparallel, also promptly when MTJ element 100 storage " 1 " bits, the resistance of this MTJ element 100 was high-impedance state.Measuring electric current can be low shown in the one state curve 301 of Fig. 4.
Fig. 5 shows that first mram memory cell according to the embodiment of disclosed one or more has the generalized section of MTJ element of the reverse connection of Fig. 3.Described memory cell 500 can be formed in the substrate, and for example the semiconductor substrate comprises for example silicon, germanium and/or a compound semiconductor materials.The switching device of this memory cell comprises that semi-conductor layer is as an active region 501, one source pole zone 510, an and drain region 520.This source region 510 is coupled to this sense wire SL 530 by a contact layer CT 570.This character line WL 540 isolates with active region 501, and the centre has gate insulator 502, provides grid voltage to open this switching device.This drain region 520 can be coupled to the MTJ element 560 of this mram memory cell, is by contact layer CT 570, the first metal layer (M1) 581, first via (V1) 591, second metal level (M2) 582, second via (V2) 592, the 3rd metal level (M3) 581, the 3rd via (V3) 593, reaches the 4th metal level (M4) 584.In order to form gate insulator 502, with a dielectric layer for example silica be deposited in this substrate, and can be by photoetching process with this dielectric layer patternization.In order to form SL 530, CT 570, M1 581, V1 591, M2 582, V2 592, M3 583, V3 593 and M4 584, metal material can be deposited in this substrate in order, and by photoetching process with this patterns of metallic materialization.
The MTJ element 560 that described memory cell 500 has reverse connection can be formed between M3 layer 583 and the M4 layer 584.Described MTJ element comprises a free layer 561, a separator 562, reaches a fixed bed 563.In order to form MTJ element 560, can deposit this free layer 561 earlier, then be separator 562 and fixed bed 563.This free layer 561 and fixed bed 563 are ferrimagnet.This free layer 561 and fixed bed 563 can comprise the alloy of Co, Fe, Ni, Mn, B and/or above-mentioned metal.This separator 562 has non-magnetic shape to be formed, and is made of suitable material, and its function can be used as the body that is electrically insulated.Separator 562 can be independently with free layer 561 and fixed bed 563 electrical isolation, and other layer (not shown) of perhaps arranging in pairs or groups is folded between this free layer 561 and the fixed bed 563.This free layer 561, separator 562, and fixed bed 563 can form for example photoetching, chemical vapour deposition technique (CVD), physical vaporous deposition (PVD), electrochemical deposition method, molecule operating art, etching method, chemical mechanical polishing method and/or other processes by traditional method for making.
Described memory cell 500 has the implementation of the MTJ element 560 of reverse connection can be by the drain region 520 that this free layer 561 is connected to this switching device, by 570 layers of M4 584, V3 593, M3 583, V2 592, M2 582, V1 591, M1 581 and CT, described in first previous paragraphs.The fixed bed 563 of this MTJ element 560 can be connected to bit line BL 550, and by 592 layers of M3 583 and V2, wherein fixed bed 563 can be deposited upon on the identical layer with M2 582.
Other selects a ground, and the free layer of the MTJ element that this oppositely connects can deposit earlier before free layer.Fig. 6 shows that second mram memory cell 600 according to the embodiment of disclosed one or more has the generalized section of MTJ element of the reverse connection of Fig. 3.The switching device of the memory cell of Fig. 6 is identical with structure among Fig. 5, having an active region 601 isolates by gate insulator 602 with character line WL 640, one source pole zone 610 is coupled to SL 630, by contact layer CT 670, and one drain region 620 be coupled to the first metal layer (M1) 681, by contact layer CT 670.
Described MTJ element 660 can be formed between M1 layer 681 and the bit line BL 650, is deposited on the upper strata metal.In order to form this MTJ element 660, can deposit this free layer 661 in advance, then be only separator 662 and fixed bed 663.The implementation of the MTJ element 660 that should oppositely connect can be by the drain region 620 that this free layer 661 is connected to this switching device, by M1 layer 681 and CT layer 670.This fixed bed 663 can be connected directly to bit line BL 650.
Though the present invention discloses as above with various embodiment, so it is not in order to limiting scope of the present invention, any those of ordinary skills, without departing from the spirit and scope of the present invention, when doing a little change and retouching.Protection scope of the present invention is as the criterion when looking the scope that appending claims defines.
Claims (10)
1. the memory cell of a magnetic RAM comprises:
One switches element, comprises one source pole, a grid and a drain electrode; And
One magnetic tunnel knot element comprises a free layer, a fixed bed and a separator, and wherein this separator is folded between this free layer and this fixed bed;
Wherein the free layer of this magnetic tunnel knot element is connected with the drain electrode of this switching device, and the fixed bed of this magnetic tunnel knot element is connected with a bit line, and the grid of this switching device is connected with a character line, and the source electrode of this switching device is connected with a sense wire.
2. the memory cell of magnetic RAM as claimed in claim 1, wherein a direction of magnetization of this free layer is to switch by the spin moment conversion.
3. the memory cell of magnetic RAM as claimed in claim 2, wherein the direction of magnetization of this free layer is switched the direction of magnetization that becomes to be parallel to this fixed bed, the free layer of this magnetic tunnel knot element is imposed enough positive voltages are tied element with respect to this magnetic tunnel fixed bed, to produce the angular momentum of required current conversion electronics, polarized and become identical direction with this fixed bed to the direction of magnetization of this free layer.
4. the memory cell of magnetic RAM as claimed in claim 2, wherein the direction of magnetization of this free layer is switched the direction of magnetization that becomes to be antiparallel to this fixed bed, the fixed bed of this magnetic tunnel knot element is imposed enough positive voltages are tied element with respect to this magnetic tunnel free layer, to produce the angular momentum of required current conversion electronics, polarized and become identical direction with this fixed bed to the direction of magnetization of this free layer.
5. the memory cell of magnetic RAM as claimed in claim 3, wherein the current carrying capacity of this memory cell becomes the required electric current of the direction of magnetization that is parallel to this fixed bed greater than the direction of magnetization of switching this free layer.
6. the memory cell of magnetic RAM as claimed in claim 4, wherein the current carrying capacity of this memory cell becomes the required electric current of the direction of magnetization that is antiparallel to this fixed bed greater than the direction of magnetization of switching this free layer.
7. the manufacture method of the memory cell of a magnetic RAM comprises:
Form a substrate;
Form one and switch element, this switching device comprises one source pole zone, an active region and a drain region;
Form magnetic tunnel knot element, this magnetic tunnel knot element comprises a free layer, a fixed bed and a separator, and wherein this separator is folded between this free layer and this fixed bed;
Connect this source region to one sense wire;
Form a writing line to control this switching device by this active region;
Connect the free layer of this drain region to this magnetic tunnel knot element; And
Fixed bed to the one bit line that connects this magnetic tunnel knot element.
8. the manufacture method of the memory cell of magnetic RAM as claimed in claim 7, this drain region of wherein said connection to the step of the free layer of this magnetic tunnel knot element comprises formation one layer or more metal level, form one or more conductive hole, and be connected this drain region to this free layer with described one or more conductive hole by described one layer or more metal level.
9. the manufacture method of the memory cell of magnetic RAM as claimed in claim 7, the fixed bed of this magnetic tunnel knot element of wherein said connection to the step of this bit line comprises formation one layer or more metal level, form one or more conductive hole, and be connected this fixed bed to this bit line with described one or more conductive hole by described one layer or more metal level.
10. storage arrangement comprises:
One memory cell comprises:
One substrate;
One switches element, comprises one source pole zone, an active region and a drain region;
One magnetic tunnel knot element comprises a free layer, a fixed bed and a separator, and wherein this separator is folded between this free layer and this fixed bed;
One sense wire is connected to this source region;
One writing line is to control this switching device by this active region; And
One bit line is connected to the fixed bed that this magnetic tunnel is tied element;
Wherein the current carrying capacity of this memory cell becomes the required electric current of the direction of magnetization that is parallel to this fixed bed greater than the direction of magnetization of switching this free layer, and becomes the required electric current of the direction of magnetization that is antiparallel to this fixed bed greater than the direction of magnetization of switching this free layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/626,092 US8416600B2 (en) | 2009-11-25 | 2009-11-25 | Reverse connection MTJ cell for STT MRAM |
| US12/626,092 | 2009-11-25 |
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| Publication Number | Publication Date |
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| CN102074649A true CN102074649A (en) | 2011-05-25 |
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| CN2010101213276A Pending CN102074649A (en) | 2009-11-25 | 2010-02-22 | Access memory devices, MRAM cell and manufacturing methods thereof |
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| US (1) | US8416600B2 (en) |
| CN (1) | CN102074649A (en) |
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| US20110122674A1 (en) | 2011-05-26 |
| US8416600B2 (en) | 2013-04-09 |
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Application publication date: 20110525 |