CN102074460B - Method for cleaning surface after chemically mechanical polishing of tungsten-molybdenum alloy - Google Patents
Method for cleaning surface after chemically mechanical polishing of tungsten-molybdenum alloy Download PDFInfo
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- CN102074460B CN102074460B CN2010102319390A CN201010231939A CN102074460B CN 102074460 B CN102074460 B CN 102074460B CN 2010102319390 A CN2010102319390 A CN 2010102319390A CN 201010231939 A CN201010231939 A CN 201010231939A CN 102074460 B CN102074460 B CN 102074460B
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- molybdenum alloy
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Abstract
The invention discloses a method for cleaning surface after chemically mechanical polishing of a tungsten-molybdenum alloy, aiming to provide a cleaning method which has the beneficial effects of improving the wafer surface quality and reducing the subsequent processing cost of alkaline chemically mechanical polishing of a tungsten-molybdenum alloy material and is convenient to use, simple and practical. The method comprises the following steps: taking ultrapure water with resistance being more than 18MOmega and adding a surfactant and an FA/OII chelating agent while stirring; adopting the ultrapure water with resistance being more than 18MOmega to dilute a corrosion inhibitor; adding the diluted corrosion inhibitor to obtained liquid while stirring and preparing alkaline water polishing liquid with pH value of 7.5-8.5 after uniform stirring; immediately using the alkaline water polishing liquid to carry out water polishing under the conditions of high flow of 1000-5000ml/min and low pressure of 0-0.01 atmosphere after chemically mechanical polishing of the tungsten-molybdenum alloy material; and later using the ultrapure water with resistance being more than 18MOmega to wash the surface under the conditions of zero pressure and flow of 1000-5000ml/min.
Description
Technical field
The invention belongs to the clean technology of wafer surface behind the CMP, particularly relate to the clean cleaning technique of control surface behind the tungsten-molybdenum alloy alkaline chemical mechanical polishing.
Background technology
The fast development of Along with computer technology, network and mechanics of communication, to integrated circuit (IC) require increasingly highly, characteristic size reduces the requirement that develops with the direction that satisfies integrated circuit high speed, highly integrated, densification and high performance gradually.W, Mo and alloy material thereof belong to refractory metal, are widely used in fields such as defence and military, Aero-Space, high-energy physics, electronic information, the energy, metallurgy, chemical industry, nuclear industry, always receive the attention of countries in the world.Simultaneously since low resistance, high-fire resistance, good corrosion resistance with and with the good tuberculosis property of nonmetallic materials such as Si, C, N, be to be hopeful the new material that uses at aspects such as very lagre scale integrated circuit (VLSIC), capacitor, radiation protection products most.W-Mo alloy material high temperature hardness is high, resistance to wear is good, intensity is high, and conventional method is more and more harsher to its surface requirements.For this reason, the processing of research W-Mo alloy material fine in surface has important use value.
Chemico-mechanical polishing (CMP) technology is by the grinding of ultra micro example and the chemical reaction acting in conjunction in the slurry; Realize the process technology of ultraprecise planarization; CMP can prevent surface brittleness crackle and the indenture that the hard grind material causes in the single mechanical polishing, and protuberance and the cut of avoiding abrasive material to cause obtain nearly flawless smooth surface; And precision is high, and it is a leveling technology best in the semi-conductor industry.Is very important with the CMP technical application in the Surface Machining of W-Mo alloy.
Tungsten-molybdenum alloy exposes the surface that makes new advances behind the glossing in batches at present; Destroyed original lattice structure, produced a large amount of dangling bonds, surface energy is high, surface tension is big; Though polishing has stopped; But the reaction of wafer surface has the process of a hysteresis, simple water flushing can not avoid polishing fluid skewness, stain phenomenon such as metal ion, make clean the back wafer surface have inhomogeneous vaporific, roughness is high, corrosion is inhomogeneous etc.; Have a strong impact on wafer surface quality, thereby cause the raising of cost in the following process and the reduction of device yield.
Summary of the invention
The present invention is in order to overcome deficiency of the prior art, to provide a kind of and can improve wafer surface quality, reducing the subsequent machining cost of tungsten-molybdenum alloy material alkaline chemical mechanical polishing, easy to use, simple cleaning method.
The present invention realizes through following technical scheme,
Method for cleaning surface after a kind of tungsten-molybdenum alloy chemico-mechanical polishing is characterized in that, comprises the steps:
(1) use resistance to add surfactant, FA/OII type chelating agent while stirring as the ultra-pure water more than the 18M Ω;
(2) adopting resistance is the above ultra-pure water dilute corrosion inhibitor of 18M Ω;
(3) corrosion inhibitor after will diluting joins in the liquid that step (1) obtains while stirring, processes the pH value after stirring and be 7.5～8.5 alkaline liquid throwing water; Form by following component by weight percentage in the liquid throwing water that obtains: surfactant 0.5%-5%, FA/OII type chelating agent 0.1-5%, corrosion inhibitor 0.01-5%, surplus be that resistance is the above ultra-pure water of 18M Ω;
(4) use above-mentioned alkaline liquid throwing water to adopt the big flow of 1000-5000ml/min under 0-0.01 atmospheric low pressure conditions, with shower nozzle is multi-faceted workpiece to be carried out water throwing after the mechanical polishing of tungsten-molybdenum alloy materials chemistry immediately, the time of water throwing is 1-3min;
(5) use resistance to be the tungsten-molybdenum alloy material flushing 1-3min of the ultra-pure water more than the 18M Ω after zero pressure, flow clean step (4) under as the condition of 1000-5000ml/min.
Wherein, zero pressure is meant that the pressure on the Pressure gauge is zero, has only the gravity pressure of polishing disk.
0-0.01 0.01 atmospheric pressure in the individual atmospheric low-pressure is meant that the numerical value on the Pressure gauge is 0.01 atmospheric pressure, does not contain the gravity pressure of polishing disk.
Said corrosion inhibitor is BTA or hexa.
Said surfactant is FA/OI type surfactant, O
π-7 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
7-H), O
π-10 ((C
10H
21-C
6H
4-O-CH
2CH
2O)
10-H), O-20 (C
12-18H
25-37-C
6H
4-O-CH
2CH
2O)
70-H), among the JFC any.FA/OI type surfactant is Jingling Microelectric Material Co., Ltd., Tianjin commercially available prod.
Said FA/OII chelating agent is Jingling Microelectric Material Co., Ltd., Tianjin commercially available prod, and name is called ethylenediamine tetra-acetic acid four (tetrahydroxyethyl-ethylene diamine), can be abbreviated as NH
2RNH
2, its structural formula is following,
The present invention has following technique effect:
(1) cleaning method of the present invention uses the alkaline liquid throwing water that contains non-ionic surface active agent, chelating agent, corrosion inhibitor etc. to carry out big flow water throwing after alkaline chemical mechanical polishing is just accomplished at once, can wash away by rapidly that wafer surface is residual polishing fluid; Reaction after polishing stops is also stopped, can obtaining cleaning, perfect polished surface, and; The heat that the cleaning of big flow is taken out of makes wafer each several part Temperature Distribution consistent, and the temperature high conformity stops non-uniform corrosion; Improve uniformity; Thereby reduce the cost of following process, improve device yield, easy to use, simple.And the cost of liquid throwing water is low, and equipment is not had corrosion.
2. clean with liquid throwing water in the cleaning method of the present invention, wherein, the non-ionic surface active agent of being selected for use can make the high surface tension of chip surface after polishing reduce rapidly, reduces affected layer, improves the uniformity of wafer surface quality; Chelating agent can with wafer surface metal remained ion is reacted, generate the big molecule chelate of solubility, in big flow aqueous solution effect disengaging wafer surface down; Corrosion inhibitor can form the unimolecule passivating film at chip surface after polishing, stops the polishing fluid of wafer surface uneven distribution to continue to form non-uniform corrosion with the matrix reaction, improves the perfection of chip surface after polishing.Use method of the present invention can improve wafer surface quality, reduce the cost of following process, improve device yield.
3, method of the present invention is carried out under low-pressure, and liquid throwing water is fully contacted with clean surface, under the effect of big flow liquid throwing water, effectively takes away the pollutant under the surface clean simultaneously, improves the surface clean quality; If pressure is excessive, then can friction be arranged, the surface quality after the influence polishing to the surface.
Embodiment
Below in conjunction with preferred embodiment, to details are as follows according to embodiment provided by the invention:
Embodiment 1
(1) the power taking resistance is the ultra-pure water 3645g of 18M Ω, puts into FA/O I type surfactant 100g while stirring, FA/O II type chelating agent 50g.
(2) the BTA corrosion inhibitor of 5g is poured in the aforesaid liquid after with the dilution of 200g deionized water while stirring.After stirring the pH value is 7.5～8.5 the water-soluble surperficial liquid throwing water of 4000g tungsten-molybdenum alloy.
(3) flow of the above-mentioned liquid throwing water employing of use 1000ml/min, multi-faceted with shower nozzle under the condition of zero pressure (gravity pressure) to the tungsten-molybdenum alloy material workpiece water throwing immediately behind the alkaline chemical mechanical polishing 1 minute.
(4) use resistance to be the ultra-pure water of the 18M Ω tungsten-molybdenum alloy material flushing after zero pressure, flow clean step (3) under as the condition of 1000ml/min 1 minute; Any surface finish that obtains does not have corrosion figure; Surface roughness can reach the 3nm rank; On 8 inches chips, particle diameter greater than 0.1 micron particle less than 10.
Embodiment 2:
(1) the power taking resistance is the ultra-pure water 3400g of 18M Ω, puts into JFC 100g and FA/OII type chelating agent 50g while stirring.
(2) claiming to be poured into while stirring in the liquid of step (1) after the 50g hexa uses the ultra-pure water dilution of 400g resistance as 18M Ω, must the pH value after stirring be 7.5～8.5 the water-soluble surperficial liquid throwing water of 4000g tungsten-molybdenum alloy.
(3) liquid throwing water that uses step (2) to obtain adopts the flow of 4000ml/min under 0.01 atmospheric pressure condition of (not containing gravity pressure), the tungsten-molybdenum alloy material behind the alkaline chemical mechanical polishing to be used the multi-faceted water throwing of shower nozzle 1 minute immediately.
(4) use resistance to be the ultra-pure water of the 18M Ω tungsten-molybdenum alloy flushing after zero pressure (gravity pressure), flow clean step (3) under as the condition of 4000ml/min 1 minute; The bright and clean no corrosion figure of the tungsten-molybdenum alloy wafer surface that obtains, surface roughness reaches the 3.2nm rank.On 8 inches chips, particle diameter greater than 0.1 micron particle less than 10.
The above only is preferred embodiment of the present invention, is not structure of the present invention is done any pro forma restriction.Every foundation technical spirit of the present invention all still belongs in the scope of technical scheme of the present invention any simple modification, equivalent variations and modification that above embodiment did.
Claims (2)
1. method for cleaning surface after the tungsten-molybdenum alloy chemico-mechanical polishing is characterized in that, comprises the steps:
(1) use resistance to add surfactant, FA/OII type chelating agent while stirring as the ultra-pure water more than the 18M Ω;
(2) adopting resistance is the above ultra-pure water dilute corrosion inhibitor of 18M Ω;
(3) corrosion inhibitor after will diluting joins in the liquid that step (1) obtains while stirring, is prepared into the pH value after stirring and is 7.5～8.5 alkaline liquid throwing water; Form by following component by weight percentage in the liquid throwing water that obtains: surfactant 0.5%-5%, FA/OII type chelating agent 0.1-5%, corrosion inhibitor 0.01-5%, surplus be that resistance is the above ultra-pure water of 18M Ω;
(4) use above-mentioned alkaline liquid throwing water to adopt the big flow of 1000-5000ml/min under 0-0.01 atmospheric low pressure conditions, with shower nozzle is multi-faceted workpiece to be carried out water throwing after the mechanical polishing of tungsten-molybdenum alloy materials chemistry immediately, the time of water throwing is 1-3min;
(5) use resistance to be the tungsten-molybdenum alloy material flushing 1-3min of the ultra-pure water more than the 18M Ω after zero pressure, flow clean step (4) under as the condition of 1000-5000ml/min;
The structural formula of said FA/OII type chelating agent is following,
2. method for cleaning surface after the tungsten-molybdenum alloy chemico-mechanical polishing according to claim 1 is characterized in that, said corrosion inhibitor is BTA or hexa.
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| CN2010102319390A CN102074460B (en) | 2010-07-21 | 2010-07-21 | Method for cleaning surface after chemically mechanical polishing of tungsten-molybdenum alloy |
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|---|---|---|---|
| CN2010102319390A CN102074460B (en) | 2010-07-21 | 2010-07-21 | Method for cleaning surface after chemically mechanical polishing of tungsten-molybdenum alloy |
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| CN102074460B true CN102074460B (en) | 2012-05-23 |
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| CN101226874A (en) * | 2006-12-27 | 2008-07-23 | 硅电子股份公司 | Cleaning liquid and cleaning method for electronic material |
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