CN102073179B - Semi-penetration and semi-reflective liquid crystal display device and driving method thereof - Google Patents
Semi-penetration and semi-reflective liquid crystal display device and driving method thereof Download PDFInfo
- Publication number
- CN102073179B CN102073179B CN 200910310135 CN200910310135A CN102073179B CN 102073179 B CN102073179 B CN 102073179B CN 200910310135 CN200910310135 CN 200910310135 CN 200910310135 A CN200910310135 A CN 200910310135A CN 102073179 B CN102073179 B CN 102073179B
- Authority
- CN
- China
- Prior art keywords
- liquid crystal
- electrode
- semi
- capacitance
- penetrating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Liquid Crystal (AREA)
Abstract
The invention relates to a semi-penetration and semi-reflective liquid crystal display device and a driving method thereof. The semi-penetration and semi-reflective liquid crystal display device comprises a plurality of pixel units, wherein each pixel unit comprises a penetration region, a reflection region, a thin-film transistor, a coupling capacitor, a first liquid crystal capacitor and a second liquid crystal capacitor; the first liquid crystal capacitor comprises a first common electrode, a liquid crystal layer corresponding to the penetration region and a penetration electrode; the second liquid crystal capacitor comprises a second common electrode, a liquid crystal layer corresponding to the reflection region and a reflective electrode; the thin-film transistor is electrically connected with the first liquid crystal capacitor and is electrically connected with the second liquid crystal capacitor through the coupling capacitor; and the thickness of the liquid crystal layer corresponding to the penetration region and the thickness of the liquid crystal layer corresponding to the reflective region are substantially the same. The semi-penetration and semi-reflective liquid crystal display device has the advantages of simple fabrication process and low cost.
Description
Technical field
The invention relates to a kind of semi-penetrating semi-reflecting type liquid crystal displaying device and driving method thereof.
Background technology
Liquid crystal indicator because of have low diathermaneity, the characteristics such as volume is compact and power consumption is low, the fields such as mobile phone, personal digital assistant, mobile computer, personal computer and TV have been widely used in, along with maturation and the innovation of correlation technique, its kind is day by day various.
According to the difference of light source that liquid crystal indicator utilizes, liquid crystal indicator can be divided into penetration liquid crystal display device and reflective LCD device.Penetration liquid crystal display device must arrange at the display panels back side backlight and show to realize image, yet the power consumption of backlight accounts for half of whole penetration liquid crystal display device power consumption, so the power consumption of penetration liquid crystal display device is larger.Reflective LCD device can solve the large problem of penetration liquid crystal display device power consumption, but is difficult to realize that image shows under the faint environment of light.Semi-penetrating semi-reflecting type liquid crystal displaying device can solve above problem.
Yet semi-penetrating semi-reflecting type liquid crystal displaying device is subject to restriction in the optical design because penetrating pattern and reflective-mode, affects display effect so that the brightness-voltage curve of penetrating region and echo area is inconsistent.In order to address this problem, industry proposes a kind of semi-penetrating semi-reflecting type liquid crystal displaying device and adopts different thickness of liquid crystal layer (Duel Cell Gap) at penetrating region with the echo area, by optical compensation improving display effect, yet this semi-penetrating semi-reflecting type liquid crystal displaying device processing procedure is complicated.Rear industry proposes again a kind of semi-penetrating semi-reflecting type liquid crystal displaying device, substantially the same thickness of liquid crystal layer (Single Cell Gap) is adopted in its penetrating region and echo area, in order to improve display effect, its penetrating region and echo area at same pixel cell utilizes two thin film transistor (TFT)s (TFT) to drive respectively, but this semi-penetrating semi-reflecting type liquid crystal displaying device has been simplified processing procedure has been needed the thin film transistor (TFT) of twice quantity, causes cost to increase.
Summary of the invention
For solving semi-penetrating semi-reflecting type liquid crystal displaying device processing procedure complexity and the high problem of cost in the prior art, be necessary to provide the semi-penetrating semi-reflecting type liquid crystal displaying device that a kind of processing procedure is simple and cost is low.
Also be necessary to provide a kind of driving method of above-mentioned semi-penetrating semi-reflecting type liquid crystal displaying device.
A kind of semi-penetrating semi-reflecting type liquid crystal displaying device, it comprises a plurality of pixel cells, each pixel cell comprises a penetrating region, an echo area, a thin film transistor (TFT), a coupling capacitance, one first liquid crystal capacitance and one second liquid crystal capacitance.Wherein, this first liquid crystal capacitance is formed by one first public electrode, a pair of liquid crystal layer and a through electrode that should penetrating region, this second liquid crystal capacitance is formed by one second public electrode, a pair of liquid crystal layer and a reflecting electrode that should the echo area, this thin film transistor (TFT) is electrically connected with this first liquid crystal capacitance, and is electrically connected with this second liquid crystal capacitance by this coupling capacitance, this is basic identical to thickness of liquid crystal layer that should the echo area to liquid crystal layer that should penetrating region and this.
A kind of driving method of semi-penetrating semi-reflecting type liquid crystal displaying device, this semi-penetrating semi-reflecting type liquid crystal displaying device comprises a plurality of pixel cells, each pixel cell comprises a penetrating region, one echo area, one thin film transistor (TFT), one coupling capacitance, one first liquid crystal capacitance and one second liquid crystal capacitance, wherein, this first liquid crystal capacitance is by one first public electrode, a pair of liquid crystal layer and a through electrode that should penetrating region form, this second liquid crystal capacitance is by one second public electrode, a pair of liquid crystal layer and a reflecting electrode that should the echo area form, this thin film transistor (TFT) is electrically connected with this first liquid crystal capacitance, and be electrically connected with this second liquid crystal capacitance by this coupling capacitance, should to liquid crystal layer that should penetrating region with should be basic identical to thickness of liquid crystal layer that should the echo area, this driving method may further comprise the steps: this first public electrode receives one first common electric voltage, this second public electrode receives one second common electric voltage, and this first common electric voltage is less than this second common electric voltage; The grid of this thin film transistor (TFT) receives the one scan signal opens this thin film transistor (TFT), the source electrode reception of data signal of this thin film transistor (TFT), this data-signal is sent to this through electrode via the drain electrode of this thin film transistor (TFT), and is sent to this reflecting electrode via this coupling capacitance.
Compared with prior art, the penetrating region of semi-penetrating semi-reflecting type liquid crystal displaying device of the present invention and echo area thickness of liquid crystal layer are basic identical, and the penetrating region of each pixel cell and echo area only utilize a thin film transistor (TFT) to drive, so processing procedure is simple, cost is low.And by first, second common electric voltage and the coupling capacitance on first, second public electrode is set, when this semi-penetrating semi-reflecting type liquid crystal displaying device drives, the liquid crystal rotation amplitude of echo area is less than penetrating region, the phase differential that light passes twice of echo area liquid crystal layer approximates light and passes penetrating region liquid crystal layer phase differential once, so the brightness-voltage curve of echo area and penetrating region is roughly the same.
Description of drawings
Fig. 1 is the cut-away section structural representation of semi-penetrating semi-reflecting type liquid crystal displaying device preferred embodiments of the present invention.
Fig. 2 is the electrical block diagram of a pixel cell of semi-penetrating semi-reflecting type liquid crystal displaying device among Fig. 1.
Embodiment
See also Fig. 1, it is the cut-away section structural representation of semi-penetrating semi-reflecting type liquid crystal displaying device preferred embodiments of the present invention.This semi-penetrating semi-reflecting type liquid crystal displaying device 10 comprise a first substrate 11, one and the second substrate 12 and that is oppositely arranged of this first substrate 11 be sandwiched in liquid crystal layer (not shown) between this first substrate 11 and this second substrate 12.Form a thin film transistor (TFT) 111, a storage capacitance line 113, one first insulation course 115, one second insulation course 116, a through electrode 117 and a reflecting electrode 118 on this first substrate 11.Form one first public electrode 121 and one second public electrode 122 on this second substrate 12.
This thin film transistor (TFT) 111 comprises a grid 1110, one source pole 1111 and one first drain electrode 1112.This grid 1110 is arranged on this first substrate 11 near on the surface of liquid crystal layer with this storage capacitance line 113.This first insulation course 115 is arranged on this grid 1110, this storage capacitance line 113 and this first substrate 11 near on the surface of liquid crystal layer.This source electrode 1111, this first drain electrode 1112 and 1 second drain electrode 1113 are arranged on this first insulation course 115.This second insulation course 116 is arranged on this source electrode 1111, this first drain electrode 1112, this second drain electrode 1113 and this first insulation course 115.This through electrode 117 is arranged on this second insulation course 116 with this reflecting electrode 118.This second insulation course 116 comprises an opening 119, and this through electrode 117 is electrically connected with this first drain electrode 1112 by this opening 119.This reflecting electrode 118, this second drain electrode 1113 and this storage capacitance line 113 corresponding settings.This second drain electrode 1113 is electrically connected with this first drain electrode 1112, or is electrically connected with this through electrode 117 by another opening (not shown) that arranges at this second insulation course 116.
This first public electrode 121 is arranged on this second substrate 12 near on the surface of liquid crystal layer with this second public electrode 122.Wherein, 121 pairs of this first public electrodes should arrange by through electrode 117, and are overlapping on vertical this first, second substrate 11,12 direction.122 pairs of this second public electrodes should reflecting electrode 118, and are overlapping on vertical this first, second substrate 11,12 direction.Gap between this first public electrode 121 and this second public electrode 122 so can utilize fringe field to accelerate the reaction time of liquid crystal molecule less than the gap between this through electrode 117 and this reflecting electrode 118.
Define this first public electrode 121 and the penetrating region of 117 corresponding regions of this through electrode for this semi-penetrating semi-reflecting type liquid crystal displaying device 10, define this second public electrode 122 and the echo area of 118 corresponding regions of this reflecting electrode for this semi-penetrating semi-reflecting type liquid crystal displaying device 10, wherein this penetrating region is substantially the same with the thickness of liquid crystal layer of this echo area.
This semi-penetrating semi-reflecting type liquid crystal displaying device 10 defines a plurality of pixel cells, and each pixel cell comprises a penetrating region and an echo area.See also Fig. 2, it is the electrical block diagram of a pixel cell 100 of this semi-penetrating semi-reflecting type liquid crystal displaying device 10.This pixel cell 100 comprises one first memory capacitance 101, one first liquid crystal capacitance 102, a coupling capacitance 103, one second memory capacitance 104, one second liquid crystal capacitance 105 and this thin film transistor (TFT) 111.The first drain electrode 1112 of this thin film transistor (TFT) 111 is electrically connected this first memory capacitance 101 and this first liquid crystal capacitance 102, and is electrically connected this second memory capacitance 104 and this second liquid crystal capacitance 105 by this coupling capacitance 103.Wherein, this coupling capacitance 103 is made of this second drain electrode 1113, this second insulation course 116 and this reflecting electrode 118.This first memory capacitance 101 is made of this second drain electrode 1113, this first insulation course 115 and this storage capacitance line 113.This second memory capacitance 104 by this reflecting electrode 118, this first, second insulation course 115,116 and this reflecting electrode 118 consist of.This first liquid crystal capacitance 102 is made of this through electrode 117, this penetrating region liquid crystal layer and this first public electrode 121.This second liquid crystal capacitance 105 is made of this reflecting electrode 118, this echo area liquid crystal layer and this second public electrode 122.
When this semi-penetrating semi-reflecting type liquid crystal displaying device 10 is actuated to display frame, this storage capacitance line 113 receives one first common electric voltage Vcom1 with this first public electrode 121, this second public electrode 122 receives one second common electric voltage Vcom2, this first common electric voltage Vcom1 is different from this second common electric voltage Vcom2, and this first common electric voltage Vcom1 is less than this second common electric voltage Vcom2.When the sweep signal that receives a corresponding sweep trace (not shown) when the grid 1110 of the thin film transistor (TFT) 111 of this pixel cell 100 was opened, this source electrode 1111 received the data-signal of a corresponding data line (not shown).This data-signal is sent to this through electrode 117 via this first drain electrode 1112, and is sent to this reflecting electrode 118 via this coupling capacitance 103.
After these semi-penetrating semi-reflecting type liquid crystal displaying device 10 pressurizations, this first, second liquid crystal capacitance 102,105 begins charging, liquid crystal molecule begins before the deflection, the critical voltage V that the liquid crystal layer cramping VLCT of penetrating region is less than or equal to liquid crystal molecule when beginning deflection
THAfter liquid crystal molecule begins deflection, the liquid crystal layer cramping V of penetrating region
LCTCritical voltage V when beginning deflection greater than liquid crystal molecule
THSince the existence of this coupling capacitance 103, the voltage data signal V that this reflecting electrode 118 receives
RThe voltage data signal V that receives less than this through electrode 117
TAgain because V
LCT=V
T-Vcom1, V
LCR=V
R-Vcom2, Vcom1＜Vcom2, therefore, V
LCT＞V
LCR, V is set
LCR=m * V
LCT+ b, the size of m value is relevant with arranging of this coupling capacitance 103, m＜1; The large I of b value passes through to adjust the difference adjustment of first, second common electric voltage Vcom1, Vcom2, and b=(1-m) * V is set
TH, b＞1.Then work as V
LCT=V
THThe time, V
LCR=V
THWork as V
LCT＞V
THThe time, because V
LCR=m * V
LCT+ b=m * V
LCT+ (1-m) * V
TH=m (V
LCT-V
TH)+V
TH, V then
TH＜V
LCR＜V
LCT
Because V
LCR＜V
LCT, the liquid crystal rotation amplitude of echo area is less than penetrating region, and the phase differential that light passes twice of echo area liquid crystal layer approximates light and passes penetrating region liquid crystal layer phase differential once, so the brightness-voltage curve of echo area and penetrating region is roughly the same.Wherein, m=0.5 is set, when the difference of first, second common electric voltage Vcom1, Vcom2 was about 1.45V, the brightness of echo area and penetrating region-voltage curve goodness of fit was higher.And by adjusting the difference of first, second common electric voltage Vcom1, Vcom2, so that V
TH＜V
LCR＜V
LCT, when this semi-penetrating semi-reflecting type liquid crystal displaying device 10 shows dark attitude picture, can show more multi-layered time GTG, make the echo area preferably show dark section details, promote contrast.Therefore, compared to prior art, these semi-penetrating semi-reflecting type liquid crystal displaying device 10 display effects are good, and the penetrating region of this semi-penetrating semi-reflecting type liquid crystal displaying device 10 and echo area thickness of liquid crystal layer are basic identical, the penetrating region of each pixel cell 100 and echo area only utilize a thin film transistor (TFT) 111 to drive, so processing procedure is simple, cost is low.
Claims (9)
1. semi-penetrating semi-reflecting type liquid crystal displaying device, it comprises a plurality of pixel cells, each pixel cell comprises a penetrating region, one echo area, one thin film transistor (TFT), one coupling capacitance, one first liquid crystal capacitance and one second liquid crystal capacitance, it is characterized in that: this first liquid crystal capacitance is by one first public electrode, a pair of liquid crystal layer and a through electrode that should penetrating region form, this second liquid crystal capacitance is by one second public electrode, a pair of liquid crystal layer and a reflecting electrode that should the echo area form, this thin film transistor (TFT) is electrically connected with this first liquid crystal capacitance, and be electrically connected with this second liquid crystal capacitance by this coupling capacitance, should to liquid crystal layer that should penetrating region with should be basic identical to thickness of liquid crystal layer that should the echo area, the common electric voltage on this first public electrode is less than the common electric voltage on this second public electrode.
2. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 1, further comprise a first substrate and one and the second substrate that is oppositely arranged of this first substrate, it is characterized in that: this thin film transistor (TFT), this through electrode and this reflecting electrode are arranged at this first substrate, this first public electrode and this second public electrode are arranged at this second substrate, and the gap between this first public electrode and this second public electrode is less than the gap between this through electrode and this reflecting electrode.
3. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 2, it is characterized in that: this thin film transistor (TFT) comprises a grid, one source pole and one first drain electrode, this thin film transistor (TFT) is electrically connected with this through electrode by this first drain electrode, this semi-penetrating semi-reflecting type liquid crystal displaying device further comprises one second drain electrode that is electrically connected with this first drain electrode, the corresponding setting with this reflecting electrode of this second drain electrode.
4. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 3, it is characterized in that: a storage capacitance line and this grid are formed on this first substrate near the surface of liquid crystal layer, one first insulation course is formed on this storage capacitance line, this grid and this first substrate are near on the surface of liquid crystal layer, this source electrode, this first drain electrode is formed on this first insulation course with this second drain electrode, one second insulation course is formed on this source electrode, this first drain electrode, on this second drain electrode and this first insulation course, this through electrode and this reflecting electrode are formed on this second insulation course, this coupling capacitance is by this second drain electrode, this second insulation course and this reflecting electrode form, this second drain electrode, this first insulation course and this storage capacitance line form a memory capacitance.
5. semi-penetrating semi-reflecting type liquid crystal displaying device as claimed in claim 4, it is characterized in that: this second insulation course comprises an opening, this through electrode is electrically connected with this first drain electrode by this opening, this second insulation course comprises another opening, and this second drain electrode is electrically connected with this through electrode by this another opening.
6. the driving method of a semi-penetrating semi-reflecting type liquid crystal displaying device, this semi-penetrating semi-reflecting type liquid crystal displaying device comprises a plurality of pixel cells, each pixel cell comprises a penetrating region, one echo area, one thin film transistor (TFT), one coupling capacitance, one first liquid crystal capacitance and one second liquid crystal capacitance, wherein, this first liquid crystal capacitance is by one first public electrode, a pair of liquid crystal layer and a through electrode that should penetrating region form, this second liquid crystal capacitance is by one second public electrode, a pair of liquid crystal layer and a reflecting electrode that should the echo area form, this thin film transistor (TFT) is electrically connected with this first liquid crystal capacitance, and be electrically connected with this second liquid crystal capacitance by this coupling capacitance, should to liquid crystal layer that should penetrating region with should be basic identical to thickness of liquid crystal layer that should the echo area, this driving method may further comprise the steps:
This first public electrode receives one first common electric voltage, and this second public electrode receives one second common electric voltage, and this first common electric voltage is less than this second common electric voltage;
The grid of this thin film transistor (TFT) receives the one scan signal opens this thin film transistor (TFT), the source electrode reception of data signal of this thin film transistor (TFT), this data-signal is sent to this through electrode via the drain electrode of this thin film transistor (TFT), and is sent to this reflecting electrode via this coupling capacitance.
7. driving method as claimed in claim 6 is characterized in that: V is set
LCR=m * V
LCT+ b, wherein V
LCRBe echo area liquid crystal layer cramping, V
LCTBe penetrating region liquid crystal layer cramping, the m value is passed through the setting of this coupling capacitance with adjustment, and m＜1, and the b value is by the difference adjustment of this first, second common electric voltage, and b＞1.
8. driving method as claimed in claim 7 is characterized in that: b=(1-m) * V is set
TH, V wherein
THVoltage when beginning deflection for the liquid crystal molecule of liquid crystal layer.
9. driving method as claimed in claim 8, it is characterized in that: this pixel cell further comprises one first memory capacitance and one second memory capacitance, this thin film transistor (TFT) is electrically connected with this first memory capacitance, and be electrically connected with this second memory capacitance by this coupling capacitance, this first, second memory capacitance is electrically connected a storage capacitance line, and this storage capacitance line receives this first common electric voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910310135 CN102073179B (en) | 2009-11-20 | 2009-11-20 | Semi-penetration and semi-reflective liquid crystal display device and driving method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910310135 CN102073179B (en) | 2009-11-20 | 2009-11-20 | Semi-penetration and semi-reflective liquid crystal display device and driving method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102073179A CN102073179A (en) | 2011-05-25 |
| CN102073179B true CN102073179B (en) | 2013-04-17 |
Family
ID=44031782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910310135 Expired - Fee Related CN102073179B (en) | 2009-11-20 | 2009-11-20 | Semi-penetration and semi-reflective liquid crystal display device and driving method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102073179B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5610739A (en) * | 1994-05-31 | 1997-03-11 | Matsushita Electric Industrial Co., Ltd. | Liquid crystal display unit with a plurality of subpixels |
| CN1599879A (en) * | 2001-12-06 | 2005-03-23 | 皇家飞利浦电子股份有限公司 | Transflective liquid crystal display device |
| CN1720480A (en) * | 2002-12-21 | 2006-01-11 | 三星电子株式会社 | Array base palte, liquid crystal indicator and driving method thereof with array base palte |
| CN1956200A (en) * | 2005-10-05 | 2007-05-02 | 三星电子株式会社 | Thin film transistor array panel |
| WO2008007610A1 (en) * | 2006-07-13 | 2008-01-17 | Sharp Kabushiki Kaisha | Liquid crystal display device |
-
2009
- 2009-11-20 CN CN 200910310135 patent/CN102073179B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5610739A (en) * | 1994-05-31 | 1997-03-11 | Matsushita Electric Industrial Co., Ltd. | Liquid crystal display unit with a plurality of subpixels |
| CN1599879A (en) * | 2001-12-06 | 2005-03-23 | 皇家飞利浦电子股份有限公司 | Transflective liquid crystal display device |
| CN1720480A (en) * | 2002-12-21 | 2006-01-11 | 三星电子株式会社 | Array base palte, liquid crystal indicator and driving method thereof with array base palte |
| CN1956200A (en) * | 2005-10-05 | 2007-05-02 | 三星电子株式会社 | Thin film transistor array panel |
| WO2008007610A1 (en) * | 2006-07-13 | 2008-01-17 | Sharp Kabushiki Kaisha | Liquid crystal display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102073179A (en) | 2011-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101243789B1 (en) | LCD and drive method thereof | |
| CN102540599B (en) | Image display device and driving method thereof | |
| CN104698642B (en) | The driving method and electronic equipment of liquid-crystal apparatus, liquid-crystal apparatus | |
| CN101581864B (en) | Liquid crystal display panel and pixel driving method thereof | |
| KR101363136B1 (en) | Liquid crystal display | |
| CN201072484Y (en) | Active element array substrates and LCD panel | |
| US9323123B2 (en) | Structure of pixel | |
| CN101965537A (en) | Liquid crystal display device | |
| TW200944905A (en) | Active device array substrate, liquid crystal display panel, electro-optical device, and methods of manufacturing and driving the same | |
| US8576349B2 (en) | Liquid crystal display panel and liquid crystal display array substrate | |
| CN102473387B (en) | Liquid crystal display device and potential setting method therefor | |
| CN101779160B (en) | Method for driving liquid crystal display device and liquid crystal display device | |
| JP2006119565A (en) | Array substrate, color filter substrate, and liquid crystal display panel having them | |
| CN103969882A (en) | LCD panel and display device | |
| CN105093597A (en) | Liquid crystal display device and electronic apparatus | |
| US8094250B2 (en) | Wide viewing angle liquid crystal display with high response speed | |
| CN100585864C (en) | Array base palte, display panels, electrooptical device and driving/manufacture method thereof | |
| US20230335076A1 (en) | Lcd panel, driving method and display device | |
| WO2021244133A1 (en) | Display substrate, driving method and maintenance method therefor, display panel, and display device | |
| CN102023441A (en) | Single-core interval transflective liquid crystal display and driving method thereof | |
| US20110102695A1 (en) | Liquid crystal display device driving method and liquid crystal display device | |
| CN102141708A (en) | Active component array substrate and liquid crystal display panel and liquid crystal display thereof | |
| CN100483191C (en) | Semi-penetration and semi-reflective liquid crystal display device | |
| CN102073179B (en) | Semi-penetration and semi-reflective liquid crystal display device and driving method thereof | |
| US20020093619A1 (en) | Liquid crystal display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: QIMEI ELECTRONIC CO LTD Free format text: FORMER OWNER: INNOLUX DISPLAY CORPORATION Effective date: 20120502 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20120502 Address after: 518109 Longhua, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 1, floor 4, Applicant after: Qunkang Technology (Shenzhen) Co., Ltd. Co-applicant after: Chimei Optoelectronics Co., Ltd. Address before: 518109 Longhua, Shenzhen, town, Foxconn science and Technology Industrial Park E District, building 1, floor 4, Applicant before: Qunkang Technology (Shenzhen) Co., Ltd. Co-applicant before: Innolux Display Group |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130417 Termination date: 20191120 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |