CN102063379B - Data storage method of FLASH memory - Google Patents
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Abstract
The invention relates to a data storage method of a FLASH memory, comprising the following steps: (1) allocating N sectors as storage sectors in a FLASH, equally dividing each sector into a plurality of data storage blocks, and writing a data empty identifier into an identification data storage block in each sector; (2) changing the data empty identifier of the identification data storage block of the sector required to be written with data into a data valid identifier, and writing data into other data storage blocks sequentially; (3) continuously writing data into the next sector after the sector is written; and (4) repeating the steps (2) and (3) until the sector N-1 is written. In the invention, data is written into multiple sectors sequentially, the data which is written at the last time, is continuously increased and has the same index number is valid when the data is modified, other data is valid, and the current sector into which the data is written is erased only when one empty sector is residual, thus greatly reducing the erasing frequency of the FLASH and prolonging the life of the FLASH.
Description
Technical field
The invention belongs to technical field of data storage, especially a kind of date storage method of FLASH memory.
Background technology
FLASH memory (programmable read only memory, hereinafter referred to as FLASH) be a kind of novel semi-conductor storer that Intel Company released in 1988, there is non-volatile storage characteristics, be called for short flash memory, such ROM (read-only memory) has that integrated level is high, reading speed is fast, single power supply, to programme the remarkable advantage such as often again, FLASH memory, as non-volatile data memory device, is widely used in embedded system.FLASH in single chip microcomputer can online programming, also can storage program run time data, but need first to wipe when revising the data in FLASH, the data both having revised a byte also first will wipe the total data of this sector, byte place, and then write data.Traditional wiring method adopts following process: 1. Backup Data all data in a sector; 2. in Backup Data, revise the data that will change; 3. all data of the FLASH actual sector at obliterated data place; 4. amended Backup Data is write back in the FLASH sector of just erasing.The deficiency that said method exists is: 1. often a byte of changing in sector all will wipe the data of whole sector, and 2. some data needs frequent amendment, and the sector at this data place can be frequently erased.It can thus be appreciated that traditional FLASH wiring method needs frequent obliterated data, but the erasing times of FLASH is limited, uses classic method to carry out serviceable life that the write of data and amendment can reduce FLASH greatly.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of scientific and reasonable, easy and simple to handle and effectively can reduce the erasable number of times of FLASH memory, improve the date storage method of the FLASH memory in FLASH memory serviceable life.
The technical scheme that the present invention takes is:
A date storage method for FLASH memory, is characterized in that: comprise the following steps:
(1) in FLASH, distribute N number of sector is memory sector, and each sector is divided into multiple DSB data store block, and the content in the identification data storage block in each sector is data for empty mark;
(2) will the data of the identification data storage block of the sector writing data be needed effectively to identify for empty mark becomes data, and order write data in other each DSB data store block;
(3), after writing a full sector, continue to next sector write data;
(4) repeating step (2) ~ (3), until write full N-1 sector, when writing data in last empty sector, adopting following steps:
1. the in the end identification data storage block of an empty sector interior write backup mark;
2. read the current valid data write the earliest in sector, and these data are write in last empty sector;
3. current writing all data in sector the earliest and write data for empty mark in identification data storage block is wiped;
4. effectively identify becoming data from backup mark in the identification data storage block storing last empty sector former of data and continue to write data in this sector;
5. when this sector write full after, repeat step 1. ~ 4., constantly update the data in each sector, the data realizing FLASH memory store.
And the N number of sector in described step (1) is continuous or discontinuous sector.
And described identification data storage block is the first DSB data store block in each sector or last DSB data store block.
And, the size of each DSB data store block in the sector in described step (1) is identical and other DSB data store block except identification data storage block is all divided into index area and data field, in the method for each DSB data store block write data be: data are write the data field of this DSB data store block by the index area call number of data being write this DSB data store block.
And, the method 2. reading the current valid data write in sector the earliest in step of described step (4) is: read all data in this sector, the call number of more each data, the data of same index number are effective with the data write for the last time, other abandons, and then the call number of data after screening is compared with the data in other sector, be effective with the data write for the last time, other abandons.
Advantage of the present invention and good effect are:
The present invention is sequentially written in data in multiple sector, just continue during Update Table to increase and the data automatically identifying the last write of same index number are effective, other is invalid, only just can clash the current sector writing data the earliest when residue empty sector, more sector is used, erasable fewer to FLASH when visual data stores.When frequent amendment a few data, only need to write data, certain sector erasable that need not repeat, greatly reduces the erasable number of times of FLASH, improves the life-span of FLASH.Wherein the size of DSB data store block and the number of sector can define according to the size of data and Modification Frequency, also FLASH can be divided into zones of different, each region adopts different block sizes and sector number to store data, and operating any instant of FLASH, the abnormal end caused due to situations such as power-off all can not obliterated data.
Embodiment
Below in conjunction with embodiment, the present invention is further described, and following embodiment is illustrative, is not determinate, can not limit protection scope of the present invention with following embodiment.
A date storage method for FLASH memory, comprises the following steps:
(1) in FLASH, distribute N number of sector is memory sector, and each sector is divided into multiple DSB data store block, and the content in the identification data storage block in each sector is data for empty mark;
N number of sector in step (1) can be continuous print, also can be discontinuous.When for discontinuous sector, can calculate according to the start address of sector and side-play amount, the location of each sector can be realized by the computerized algorithm of routine.
The size of each DSB data store block in the sector in step (1) is identical and other DSB data store block except identification data storage block is all divided into index area and data field, in the method for each DSB data store block write data be: the data field first data being write this DSB data store block, then the index area call number of data being write this DSB data store block.If powering down chips after write call number, data are no write also, does not more just know after powering on that whether real data are.The benefit then writing call number is: powering down chips during write data or when not writing index after write data, all positions of call number are " 1 " (default value when namely sector is wiped free of), represent the data invalid in this DSB data store block.
(2) will the data of the identification data storage block of the sector writing data be needed effectively to identify for empty mark becomes data, and order write data in other each DSB data store block;
(3), after writing a full sector, continue to next sector write data;
(4) repeating step (2) ~ (3), until write full N-1 sector, when writing data in last empty sector, adopting following steps:
1. the in the end identification data storage block of an empty sector interior write backup mark;
2. read the current valid data write the earliest in sector, and these data are write in last empty sector;
3. current writing all data in sector the earliest and write data for empty mark in identification data storage block is wiped;
4. effectively identify becoming data from backup mark in the identification data storage block storing last empty sector former of data and continue to write data in this sector;
5. when this sector write full after, repeat step 1. ~ 4., constantly update the data in each sector, the data realizing FLASH memory store.
The method 2. reading the current valid data write in sector the earliest in step of step (4) is: read all data in this sector, the call number of more each data, the data of same index number are effective with the data write for the last time, other abandons, and then the call number of data after screening is compared with the data in other sector, be effective with the data write for the last time, other abandons.
Identification data storage block in above steps is the first DSB data store block in each sector or last DSB data store block.
Application Example
During monopod video camera monitoring, want the cradle head preset positions that recording user is arranged, generally to store 128 preset point (1 to 128), during storage, each presetting bit is stored as one piece, preset item is as call number (two bytes), data field stores the data of presetting bit, be respectively horizontal level (two bytes), upright position (two bytes), camera zoom (two bytes), it can thus be appreciated that the size of DSB data store block in each sector is Eight characters joint, shared by byte shared by call number in all DSB data store block in all sectors and data, byte is all identical.Its structure is in table 1:
| Call number (two bytes) | Data (six bytes) |
Table 1: the definition of the DSB data store block in each sector
In this application embodiment, data are stored in the in-chip FLASH of single-chip microcomputer, use the STM32 single-chip microcomputer of STMicw Electronics, the sector-size of in-chip FLASH is 1024 bytes, 128 points will take the storage space of 2k, but the space selected when realizing must be greater than 2k, the larger erasing times that more can reduce FLASH in space.Continuous print eight sector storage are selected, eight sector called after S0, S1, S2, S3, S4, S5, S6, S7 respectively during specific implementation.Identification data storage block in this application embodiment chooses the first DSB data store block, and the sectors status wherein write uses following data representation respectively: data are that sky is designated 0xffff, and data are effectively designated 0x0, and backup is designated 0xfefe.FLASH has different characteristics, if the word bit of correspondence is become " 0 " from " 1 " during some writes, first need not wipe, can write direct, and what have can change other number into from " FF " after erasing, then may change " 0 " into need not wipe.So realize the amendment of the first DSB data store block state in each sector, namely become " backup mark " from " data are empty mark ", or become " valid data mark " from " backup mark ", do not need to wipe this FLASH sector.
Storing data is all empty with the first eight sector, and in the first DSB data store block of each sector, all write invalid data mark, write effective Data Identification by the first DSB data store block of S0 sector after system initialization, and order writes data in each DSB data store block.
Data write, change and the process read:
Write call number 1, data 1;
Write call number 2, data 2;
Write call number 3, data 3;
Write call number 4, data 4;
The data of amendment call number 2: additional call number is 2, and data content is the data of 3;
Write call number 5, data 5;
Write call number 90, data 100;
Read call number 3 data, at this moment sense data is 3;
Read call number 2 data, at this moment sense data is 3;
The data of amendment call number 2: additional call number is 2, and data content is the data of 9;
Read call number 2 data, at this moment sense data is 9;
Storage organization after write is in table 2:
Storage organization in table 2:S0 sector
When S0 writes full data, write data in first DSB data store block of S1 and effectively identify, and write data in remaining DSB data store block.Repeat said process, until S6 writes full.When S6 writes a full space-time sector only surplus S7, then when writing data, adopt following steps:
1. in the first DSB data store block write backup mark of S7.
2. read the current valid data write the earliest in the S0 of sector, and these data are write in last empty sector, concrete grammar is: read all data in S0, the call number of more each data, the data of same index number are effective with the data write for the last time, other abandons, and then the call number of data after screening is compared with the data in other sector (S1 ~ S6), be effective with the data write for the last time, other abandons, in valid data write S7 after final screening, the data structure in S0 and S7 is in table 3 and table 4.
3. all data in the sector of write the earliest (S0) that erasing is current also write data for empty mark in the first DSB data store block;
4. effectively identify becoming data from backup mark in the first DSB data store block storing last empty sector (S7) former of data and continue to write data in this sector;
5., when S7 writes completely, the now current sector of write is the earliest S1, is backed up in S0 by the valid data in S1, then continues to write full S0, then the like, the data achieving FLASH memory store.
S7
The data stored in table 3:S7
S0
The data stored in table 4:S0
The sector number storing data in the present invention can be defined by the user, can find out the more erasing times that more can reduce sector in the sector of definition.Also the life-span of FLASH can not be reduced because of the record of a certain index of frequent amendment, because the life-span is only relevant with total erasable number of times.The size of block and the number of block can be defined by the user, the number of definition block size and block can be carried out according to the frequency of size of data and amendment, also FLASH can be divided into zones of different, each district uses the present invention to adopt different block sizes and block number to store data.In any instant of operation FLASH, the abnormal end caused due to situations such as power-off all can not obliterated data.
Claims (1)
1. a date storage method for FLASH memory, is characterized in that: comprise the following steps:
(1) in FLASH, distribute N number of sector is memory sector, and each sector is divided into multiple DSB data store block, and the content in the identification data storage block in each sector is data for empty mark;
(2) will the data of the identification data storage block of the sector writing data be needed effectively to identify for empty mark becomes data, and order write data in other each DSB data store block;
(3), after writing a full sector, continue to next sector write data;
(4) repeat step (2) ~ (3), until write full N-1 sector, when writing data in last empty sector, employing following steps:
1. the in the end identification data storage block of an empty sector interior write backup mark;
2. read the current valid data write the earliest in sector, and these data are write in last empty sector;
3. current writing all data in sector the earliest and write data for empty mark in identification data storage block is wiped;
4. effectively identify becoming data from backup mark in the identification data storage block storing last empty sector former of data and continue to write data in this sector;
5. when this sector write full after, repeat step 1. ~ 4., constantly update the data in each sector, the data realizing FLASH memory store;
Described step (1) in N number of sector be continuous or discontinuous sector;
Described identification data storage block is the first DSB data store block in each sector or last DSB data store block;
Described step (1) in sector in the size of each DSB data store block identical and other DSB data store block except identification data storage block is all divided into index area and data field, in the method for each DSB data store block write data be: the data field first data being write this DSB data store block, then the index area call number of data being write this DSB data store block;
Described step the method 2. reading the current valid data write in sector the earliest in step is (4): read all data in this sector, the call number of more each data, the data of same index number are effective with the data write for the last time, other abandons, and then the call number of data after screening is compared with the data in other sector, be effective with the data write for the last time, other abandons.
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