CN102055414A - Radio-frequency power amplifier module and mobile communication terminal - Google Patents
Radio-frequency power amplifier module and mobile communication terminal Download PDFInfo
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- CN102055414A CN102055414A CN201010146045.1A CN201010146045A CN102055414A CN 102055414 A CN102055414 A CN 102055414A CN 201010146045 A CN201010146045 A CN 201010146045A CN 102055414 A CN102055414 A CN 102055414A
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- radio
- power amplifier
- frequency power
- frequency
- matching network
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- 238000010295 mobile communication Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 2
- 238000003780 insertion Methods 0.000 abstract 1
- 230000037431 insertion Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Abstract
The invention provides a radio-frequency power amplifier module and a mobile communication terminal. The radio-frequency power amplifier module comprises a radio-frequency power amplifier, a power control circuit and an output matching network, wherein the radio-frequency power amplifier is used for amplifying power of an input radio-frequency signal, the power control circuit is used for controlling the output power of the radio-frequency power amplifier, the input end of the output matching network is connected with the output end of the radio-frequency power amplifier for realizing the output end impedance matching of the radio-frequency power amplifier; and the output matching network is realized by integrating a passive device on an IPD (Insertion Phase Delay) die, and the passive device at least comprises an inductance element and a capacitance element. According to the invention, the size of the radio-frequency power amplifier module can be remarkably reduced, the package procedure is simplified and the integral cost of the module is greatly lowered.
Description
Technical field
The present invention relates to power amplification circuit, in particular to a kind of radio-frequency power amplifier module and the mobile communication terminal that comprises this module.
Background technology
In modern wireless communication systems, radio-frequency power amplifier module is a critical component of realizing the radiofrequency signal wireless transmission.The major function of radio-frequency power amplifier module is, modulated radiofrequency signal is amplified to required performance number, delivers in the antenna and launches, and can receive enough big signal level to guarantee the receiver in certain zone.
With reference to Fig. 1, Fig. 1 shows the structure of radio-frequency power amplifier module in the prior art.Wherein, power control circuit is the important component part of radio-frequency power amplifier module, this circuit changes the size of the direct current supply of its supply power amplifier according to the size of the output signal Vramp of digital to analog converter DAC in the wireless communication system baseband circuit, thus the power output of control power amplifiers.Power control circuit is mainly by the control of dual mode realization to the radio frequency power amplifier output power, the one, the direct current supply voltage of control power amplifiers, the 2nd, the direct current supply electric current of control power amplifiers.
Output matching network is another important component part of radio-frequency power amplifier module.In the prior art, general application surface installing device (SMD) element is realized output matching network.Its specific implementation mainly contains two kinds, and a kind of mode is all to use the SMD element to realize that the SMD element comprises capacity cell, inductance element.For example, output matching network shown in Fig. 1 is promptly by SMD inductance component L 1, and SMD capacity cell C1, C2 form; Another kind of mode is SMD electric capacity, inductance element and the planar spiral inductor made on substrate to be combined realize.Usually, electric capacity in the output matching network and partial inductance adopt the SMD element, and another part inductance then adopts the planar spiral inductor on the substrate to realize.
But in practical application and producing, above-mentioned implementation all exists inevitable defective.On the one hand, if all adopt the SMD element to realize, inductance value and capacitance all can't be accomplished continuously adjustablely in the output matching network, cause the accuracy of output matching network to be limited to.On the other hand, if adopt the SMD element to realize,,, increased area of chip owing to the base plan spiral inductance takes up room greatlyyer though that the inductance value in the output matching network can realize continuously is adjustable with the mode that the base plan spiral inductance combines.
In a word, adopt implementation of the prior art to realize the radio frequency output matching network, all will be applied to the SMD element inevitably.Like this, in the chip module encapsulation process, just must increase the operation that mounts of SMD element, make the packaging process complexity.And, owing to use discrete SMD component mounter and/or base plan spiral inductance, must cause adopting the output matching network of above two kinds of implementations all to take bigger space, often will account for 50% of whole radio-frequency power amplifier module area, thereby cause the whole cost of module higher, and be unfavorable for system's miniaturization.
Summary of the invention
At the problems referred to above, the objective of the invention is to, the solution of the output matching network in a kind of radio-frequency power amplifier module is provided, to dwindle module size, simplify packaging process, and reduce the whole cost of module.
Above-mentioned purpose of the present invention realizes by radio-frequency power amplifier module and mobile communication terminal are provided.
According to first aspect, a kind of radio-frequency power amplifier module is provided, comprise radio-frequency power amplifier, power control circuit and output matching network, described radio-frequency power amplifier is used to amplify the power of institute's input radio frequency signal, described power control circuit is used to control the power output of radio-frequency power amplifier, the input of described output matching network links to each other with the output of radio-frequency power amplifier, be used to realize the output impedance matching of radio-frequency power amplifier, it is characterized in that, described output matching network realizes that by integrated passive devices on the IPD tube core described passive device comprises an inductance element and a capacity cell at least.
In first aspect, preferably, described IPD tube core adopts resistivity to be not less than the high resistant substrate of 300 Ω cm.
Preferably, described radio-frequency power amplifier module also comprises radio-frequency (RF) switch, the input of described radio-frequency (RF) switch links to each other with the output of output matching network, and under the control of described power control circuit, radio-frequency (RF) switch realizes the switching between radio-frequency transmissions pattern and the receiving mode.
Preferably, described output matching network does not have the SMD element.
Preferably, described power control circuit adopts the CMOS controller.
According to second aspect, a kind of mobile communication terminal is provided, it is characterized in that, comprise the above radio-frequency power amplifier module described in the first aspect.
According to the present invention, because innovation ground application integration passive device (IPD) technology designs, realizes the radio frequency output matching network, can obviously dwindle the size of radio-frequency power amplifier module, simplify packaging process, greatly reduce the whole cost of module simultaneously.
Description of drawings
For understanding the present invention better, hereinafter the invention will be further described in conjunction with the accompanying drawings with embodiment.In the accompanying drawing:
Fig. 1 is the structured flowchart of radio-frequency power amplifier module in the prior art;
Fig. 2 is the structured flowchart of the radio-frequency power amplifier module of one embodiment of the invention;
Fig. 3 shows the IPD output matching network of this embodiment of the invention;
Fig. 4 is the structured flowchart of the radio-frequency power amplifier module of another embodiment of the present invention.
Embodiment
With reference to Fig. 2, Fig. 2 is the structured flowchart of the radio-frequency power amplifier module of one embodiment of the invention.Described radio-frequency power amplifier module can be used for any mobile communication terminal, for example in the mobile phone, also can be used for the devices such as wireless network card of notebook computer.Among this embodiment, radio-frequency power amplifier module comprises radio-frequency power amplifier PA, power control circuit and output matching network.Wherein, radio-frequency power amplifier PA receives the modulated radiofrequency signal from front-end chip (radio-frequency (RF) transceiver), realizes the power amplification to this radiofrequency signal.Usually, the tube core substrate of radio-frequency power amplifier PA can be used GaAs (GaAs) material; Power control circuit is realized the control to radio-frequency power amplifier PA power output, for example can adopt the CMOS controller.The substrate of CMOS controller chip is generally low-resistance silicon, and resistivity is generally 0.1 Ω cm～10 Ω cm; The input of output matching network is connected to the output of radio-frequency power amplifier PA, is used to realize the output impedance matching of radio-frequency power amplifier PA.Different fully with the output matching network that all or part of application SMD element in the prior art is realized, the output matching network of this embodiment of the invention does not use the SMD element, and application integration passive device (IPD) technology designs and realizes.That is, this output matching network can be realized by passive devices such as integrated inductor, electric capacity, resistance, transformer on the IPD tube core, and not integrated active device.Particularly, described passive device comprises an inductance element and a capacity cell at least.
With reference to Fig. 3, Fig. 3 shows the IPD output matching network of this embodiment of the invention.Wherein, the substrate of IPD tube core can adopt highly resistant material, and preferably, resistivity is not less than 300 Ω cm.The corresponding output matching network of SMD output matching network among integrated and Fig. 1 on the IPD tube core, the i.e. network of forming by inductance component L 1 and capacity cell C1, C2, wherein inductance component L 1 for example is the metal spiral inductance, and capacity cell C1, C2 for example are metal-dielectric-metal M IM electric capacity.
Here, the IPD tube core adopts highly resistant material as substrate, and the metal that employing thickness is not less than 1um can greatly improve the quality factor (Q value) of passive devices such as inductance in the output matching network, electric capacity and transformer as conductor.With the 2.5nH inductance is example, and integrated inductance Q value is about 5～7 on the common low-resistance silicon, adopts highly resistant material then can reach more than 25 as the IPD inductance Q value of substrate.Thereby the output matching network radio frequency loss in this embodiment of the invention is little, can greatly improve the efficient of radio-frequency power amplifier.Simultaneously, adopt the IPD technology can also greatly improve the breakdown voltage value of electric capacity in the output matching network, thereby improve the reliability of output matching network, and then make radio-frequency power amplifier module have advantages such as high efficiency, high integration, low cost, small size.
It may be noted that the concrete output matching network form of being made up of inductance component L 1, capacity cell C1, C2 shown in Fig. 3, only as example, the present invention is not limited thereto.Any output matching network that can adopt the SMD element to realize can both be used the present invention and realize.The concrete form of radio frequency output matching network reaches the wherein parameter value of passive device, decides according to concrete applicable cases.This is understandable for those skilled in the art.
With reference to Fig. 4, Fig. 4 is the structured flowchart of the radio-frequency power amplifier module of another embodiment of the present invention.This embodiment and different being embodiment illustrated in fig. 2 except comprising radio-frequency power amplifier PA, power control circuit (CMOS controller) and output matching network, also increase by a radio-frequency (RF) switch in this radio-frequency power amplifier module.As shown in Figure 4, radio-frequency power amplifier PA realizes the power amplification to radiofrequency signal, outputs to the IPD output matching network.The IPD output matching network is realized the output impedance matching of radio-frequency power amplifier PA, and radiofrequency signal is outputed to radio-frequency (RF) switch.Radio-frequency (RF) switch realizes the switching between radio-frequency transmissions pattern, the receiving mode under the control of CMOS controller.The CMOS controller is realized the control of radio-frequency power amplifier PA power output and the model selection of radio-frequency (RF) switch.Equally, integrated this output matching network on the IPD tube core.Among this embodiment, radio-frequency power amplifier module not only has the radio-frequency power enlarging function, and integrated part radio frequency receiving function.Compare with solution of the prior art, the chip area of this scheme can reduce more than 25%, and cost significantly reduces.
In addition, IPD electric capacity, the inductance element of the present invention's employing can be accomplished continuously adjustable.Those skilled in the art understand, and get final product by its area of design for capacity cell, then mainly realize adjustable by its number of turn of design, length etc. for inductance element.
Obviously, the present invention described here can have many variations, and this variation can not be thought and departs from the spirit and scope of the present invention.Therefore, the change that all it will be apparent to those skilled in the art, such as, the variation on physical circuit and chip layout way of realization all is included within the covering scope of these claims.
Claims (6)
1. radio-frequency power amplifier module, comprise radio-frequency power amplifier, power control circuit and output matching network, described radio-frequency power amplifier is used to amplify the power of institute's input radio frequency signal, described power control circuit is used to control the power output of radio-frequency power amplifier, the input of described output matching network links to each other with the output of radio-frequency power amplifier, be used to realize the output impedance matching of radio-frequency power amplifier, it is characterized in that, described output matching network realizes that by integrated passive devices on the IPD tube core described passive device comprises an inductance element and a capacity cell at least.
2. radio-frequency power amplifier module as claimed in claim 1 is characterized in that, described IPD tube core adopts resistivity to be not less than the high resistant substrate of 300 Ω cm.
3. radio-frequency power amplifier module as claimed in claim 1, it is characterized in that, described radio-frequency power amplifier module also comprises radio-frequency (RF) switch, the input of described radio-frequency (RF) switch links to each other with the output of output matching network, under the control of described power control circuit, radio-frequency (RF) switch realizes the switching between radio-frequency transmissions pattern and the receiving mode.
4. as each described radio-frequency power amplifier module in the claim 1 to 3, it is characterized in that described output matching network does not have the SMD element.
5. as each described radio-frequency power amplifier module in the claim 1 to 3, it is characterized in that described power control circuit adopts the CMOS controller.
6. a mobile communication terminal is characterized in that, comprises each described radio-frequency power amplifier module in the claim 1 to 5.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010146045.1A CN102055414A (en) | 2010-04-14 | 2010-04-14 | Radio-frequency power amplifier module and mobile communication terminal |
| PCT/CN2011/071752 WO2011127777A1 (en) | 2010-04-14 | 2011-03-14 | Radio frequency power amplifier module and mobile communication terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010146045.1A CN102055414A (en) | 2010-04-14 | 2010-04-14 | Radio-frequency power amplifier module and mobile communication terminal |
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| Publication Number | Publication Date |
|---|---|
| CN102055414A true CN102055414A (en) | 2011-05-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201010146045.1A Pending CN102055414A (en) | 2010-04-14 | 2010-04-14 | Radio-frequency power amplifier module and mobile communication terminal |
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| Country | Link |
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| CN (1) | CN102055414A (en) |
| WO (1) | WO2011127777A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103312278A (en) * | 2013-05-10 | 2013-09-18 | 华中科技大学 | Power control system for radio-frequency power amplifier |
| CN106559049A (en) * | 2014-09-30 | 2017-04-05 | 天工方案公司 | Network with integrated passive devices and conductive trace, dependent module and device |
| WO2022022439A1 (en) * | 2020-07-31 | 2022-02-03 | 诺思(天津)微系统有限责任公司 | Radio frequency module design method, radio frequency module, and communication device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1547775A (en) * | 2002-06-24 | 2004-11-17 | 自由度半导体公司 | Integrated circuit structure for mixed signal RF applications and circuits |
| CN101667810A (en) * | 2009-09-29 | 2010-03-10 | 锐迪科微电子（上海）有限公司 | Chip of double-frequency radio-frequency power amplifier circuit |
| CN101667854A (en) * | 2009-09-23 | 2010-03-10 | 惠州市正源微电子有限公司 | Radio-frequency power composite circuit |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4012840B2 (en) * | 2003-03-14 | 2007-11-21 | 三菱電機株式会社 | Semiconductor device |
| JP2006165830A (en) * | 2004-12-06 | 2006-06-22 | Renesas Technology Corp | Electronic equipment, low pass filter and method for manufacturing electronic equipment |
| US7746174B2 (en) * | 2008-06-12 | 2010-06-29 | Samsung Electro-Mechanics Company, Ltd. | Systems and methods for power amplifier with integrated passive device |
-
2010
- 2010-04-14 CN CN201010146045.1A patent/CN102055414A/en active Pending
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2011
- 2011-03-14 WO PCT/CN2011/071752 patent/WO2011127777A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1547775A (en) * | 2002-06-24 | 2004-11-17 | 自由度半导体公司 | Integrated circuit structure for mixed signal RF applications and circuits |
| CN101667854A (en) * | 2009-09-23 | 2010-03-10 | 惠州市正源微电子有限公司 | Radio-frequency power composite circuit |
| CN101667810A (en) * | 2009-09-29 | 2010-03-10 | 锐迪科微电子（上海）有限公司 | Chip of double-frequency radio-frequency power amplifier circuit |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103312278A (en) * | 2013-05-10 | 2013-09-18 | 华中科技大学 | Power control system for radio-frequency power amplifier |
| CN103312278B (en) * | 2013-05-10 | 2016-04-20 | 华中科技大学 | A kind of power control system for radio-frequency power amplifier |
| CN106559049A (en) * | 2014-09-30 | 2017-04-05 | 天工方案公司 | Network with integrated passive devices and conductive trace, dependent module and device |
| CN106559049B (en) * | 2014-09-30 | 2019-12-13 | 天工方案公司 | Network with integrated passive devices and conductive traces, related modules and devices |
| US10553570B2 (en) | 2014-09-30 | 2020-02-04 | Skyworks Solutions, Inc. | Network with integrated passive device and conductive trace in packaging substrate and related modules and devices |
| WO2022022439A1 (en) * | 2020-07-31 | 2022-02-03 | 诺思(天津)微系统有限责任公司 | Radio frequency module design method, radio frequency module, and communication device |
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| Publication number | Publication date |
|---|---|
| WO2011127777A1 (en) | 2011-10-20 |
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Application publication date: 20110511 |