CN102054904A - Gallium nitride light-emitting diode structure with radiating through holes - Google Patents
Gallium nitride light-emitting diode structure with radiating through holes Download PDFInfo
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- CN102054904A CN102054904A CN 200910180388 CN200910180388A CN102054904A CN 102054904 A CN102054904 A CN 102054904A CN 200910180388 CN200910180388 CN 200910180388 CN 200910180388 A CN200910180388 A CN 200910180388A CN 102054904 A CN102054904 A CN 102054904A
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Abstract
The invention discloses a gallium nitride light-emitting diode structure with radiating through holes. The gallium nitride light-emitting diode structure comprises a sapphire substrate, a radiating layer and a gallium nitride light-emitting diode chip, wherein the light-emitting diode chip is positioned on the upper surface of the sapphire substrate, and the radiating layer is positioned on the lower surface of the sapphire substrate; and the gallium nitride light-emitting diode structure is provided with at least one radiating through hole, the at least one radiating through hole passes through the light-emitting diode chip and the sapphire substrate, and heat conduction materials are filled in the radiating through holes to form a radiating connecting channel contacting the radiating layer; and an additional radiating path is provided to improve the radiating effect substantially, so that the influence on light-emitting stability or even perpetual damage which is caused by overheating are prevented.
Description
Technical field
The present invention relates to a kind of LED structure with gallium nitride system, relate in particular to a kind of LED structure with gallium nitride system of tool heat radiation through hole.
Background technology
Light-emitting diode (Light Emitting Diode, LED) has the high efficiency characteristics of luminescence, therefore and available general semiconductor fabrication is produced in a large number, is emphasizing under the energy-conservation international agitation, and light-emitting diode is a large amount of is applied to general lighting light source and Backlight For Liquid Crystal Display Panels.
Light-emitting diode mainly is to utilize external voltage to be applied to the positive terminal and the negative pole end of optical diode, making the PN of optical diode connect face forms along local derviation logical, and because light-emitting diode has the characteristic of direct gap, therefore can convert most electric energy to luminous energy and luminous, remaining electric energy then transfers heat to.In general, the luminous efficiency temperature influence of light-emitting diode, especially high-power light-emitting diode, usually significantly reduce luminous efficiency because of radiating efficiency is not good, or even Yin Wendu too high and nonvolatil damage takes place, therefore how improving luminous efficiency and strengthening radiating efficiency is the primary problem of light-emitting diode industrial circle all the time.
In different light-emitting diodes, GaN series LED is owing to have quite high luminous efficiency and operational stability, therefore come into one's own gradually, and be common in the light-emitting diode industrial circle with the different solutions that improve luminous and radiating efficiency at GaN series LED.
Consult Fig. 1, be the schematic diagram of light emitting diode construction in the prior art.As shown in Figure 1, light emitting diode construction comprises light-emitting diode chip for backlight unit 10, sapphire substrates 20 and reflector 30, wherein light-emitting diode chip for backlight unit 10 is to form on sapphire substrates 20, light-emitting diode chip for backlight unit 10 can be the light emitting diode with vertical structure chip, mainly comprise P type gallium nitride layer and the n type gallium nitride layer of storehouse on sapphire substrates 20 in regular turn, utilize along partially the time face that the connects generation electronics electricity hole of P type gallium nitride layer and n type gallium nitride layer compound and luminous.Reflector 30 is under sapphire substrates 20, can be the distributed Bragg reflector (Distributed Bragg Reflector, DBR), in order to the reflection light-emitting diode chip for backlight unit 10 light, shown in the light path L among Fig. 1, use and improve whole luminous efficiency.
The shortcoming of above-mentioned light emitting diode construction is, the heat-sinking capability of sapphire substrates is poor, and therefore the heat that can't remove light-emitting diode chip for backlight unit fast and produced limits the operand power of light-emitting diode chip for backlight unit, and be not suitable for High Power LED.
Consult Fig. 2, be the schematic diagram of another light emitting diode construction in the prior art.As shown in Figure 2, light emitting diode construction mainly comprises light-emitting diode chip for backlight unit 10 and heat dissipating layer 40, after forming light-emitting diode chip for backlight unit 10 on the sapphire substrates (not shown), be to peel off the removal sapphire substrates through the radium-shine processing procedure (Laser Lift-off Process) of peeling off, then under light-emitting diode chip for backlight unit 10, utilize aluminium or copper to electroplate (Al or Cu Plating) and form and comprise on the heat dissipating layer 40 of aluminium, copper alloy or metal, because of heat dissipating layer 40 can directly remove the heat that light-emitting diode chip for backlight unit 10 is produced, so can significantly improve radiating efficiency.Yet the shortcoming of the prior art is the manufacturing cost height, especially needs complicated manufacturing step, comprises the radium-shine processing procedure of peeling off, and is therefore incompatible with the processing procedure of present light-emitting diode.
Therefore, need a kind of radium-shine light emitting diode construction of peeling off processing procedure and the extra heat dissipation path being provided at present processing procedure institute compatibility condition that do not need, use addressing the above problem.
Summary of the invention
Main purpose of the present invention is to provide a kind of LED structure with gallium nitride system of tool heat radiation through hole, to solve above-mentioned the problems of the prior art.
The LED structure with gallium nitride system of tool heat radiation through hole of the present invention comprises:
One sapphire substrates;
One heat dissipating layer is at the lower surface of this sapphire substrates; And
One light-emitting diode chip for backlight unit is gallium nitride based light-emitting diode chip for backlight unit, on the upper surface of this sapphire substrates, and has a luminous zone;
Wherein, this heat dissipating layer is in order to provide heat radiation, this LED structure with gallium nitride system has at least one heat radiation through hole, this heat radiation through hole runs through this light-emitting diode chip for backlight unit and sapphire substrates, and in the heat radiation through hole, fill up Heat Conduction Material, the heat radiation that touches heat dissipating layer with formation connects the road, and extra heat dissipation path is provided, and the heat that this light-emitting diode chip for backlight unit produced is conducted to the outside.
In the LED structure with gallium nitride system of tool heat radiation through hole of the present invention, light-emitting diode chip for backlight unit is on the upper surface of sapphire substrates, and heat dissipating layer is at the lower surface of sapphire substrates, and LED structure with gallium nitride system has at least one heat radiation through hole, this at least one heat radiation through hole runs through light-emitting diode chip for backlight unit and sapphire substrates, and fill up Heat Conduction Material in the heat radiation through hole, the heat radiation that touches heat dissipating layer with formation connects the road, provide extra heat dissipation path significantly improving cooling effect, and then avoid taking place overheated and influence stability of photoluminescence or even permanent damage takes place.
Description of drawings
Fig. 1 is the schematic diagram of light emitting diode construction in the prior art.
Fig. 2 is the schematic diagram of another kind of light emitting diode construction in the prior art.
Fig. 3 is the schematic diagram of the LED structure with gallium nitride system of tool heat radiation through hole of the present invention.
Embodiment
Those skilled in the art below cooperate Figure of description that embodiments of the present invention are done more detailed description, so that can implement after studying this specification carefully according to this.
Consult Fig. 3, be the schematic diagram of the LED structure with gallium nitride system of tool of the present invention heat radiation through hole.At first, as shown in Figure 3, the LED structure with gallium nitride system of tool heat radiation through hole of the present invention comprises sapphire substrates 20, heat dissipating layer 40 and gallium nitride based light-emitting diode chip for backlight unit 50, wherein light-emitting diode chip for backlight unit 50 is to utilize the semiconductive thin film forming method and form on the upper surface of sapphire substrates 20, such as vapour deposition process, and heat dissipating layer 40 is to utilize the metal or alloy galvanoplastic and form on the lower surface of sapphire substrates 20.Sapphire substrates 20 is used as the supporting body of light-emitting diode chip for backlight unit 50, and heat dissipating layer 40 is the heat that is produced in order to dissipation light-emitting diode chip for backlight unit 50, and is overheated and influence stability of photoluminescence or even permanent damage takes place to avoid light-emitting diode chip for backlight unit 50.
Light-emitting diode chip for backlight unit 50 among Fig. 3 has a luminous zone, and as the overshooting shape among the figure, this overshooting shape is represented exemplary embodiment, be not in order to qualification the present invention, so the present invention can comprise the general light-emitting diode chip for backlight unit 50 of tool flat surface.In addition, light-emitting diode chip for backlight unit 50 has positive terminal and negative pole end (not shown), connect two electric signals respectively, make light-emitting diode chip for backlight unit 50 along partially the time, that is the voltage of the positive terminal of light-emitting diode chip for backlight unit 50 pressure reduction that is higher than the voltage of negative pole end and two ends is during greater than the conducting voltage of this light-emitting diode chip for backlight unit 50, such as general light-emitting diode chip for backlight unit is 1.9V and the white light emitting diode chip is 3.5V, the luminous zone of light-emitting diode chip for backlight unit 50 then, that is PN meets the face district, can convert the part electric energy to luminous energy and luminous.
Further as shown in Figure 3, can utilize suitable processing mode, such as radium-shine boring (laser driller), form at least one heat radiation through hole 60, and this heat radiation through hole 60 runs through part and sapphire substrates 20 outside the luminous zone of light-emitting diode chip for backlight unit 50.Heat radiation through hole 60 can have different section configurations and arrangement mode, can be circle, rectangle or other is irregularly shaped such as the section of each heat radiation through hole 60, and it is one or more layers the concentric circles annular at center that arrangement mode can be with the luminous zone, or one or more layers rectangle.Be noted that Fig. 3 shows that two heat radiation through holes 60 to be used as exemplary embodiment, are not in order to limit the present invention.
Fill up with Heat Conduction Material in the heat radiation through hole 60, form heat radiation and connect road 70, and heat radiation connects road 70 and touches heat dissipating layer 40, and can be connected to other heat abstractor (not shown), such as large tracts of land radiating fin or sheet metal, in order to heat conduction that light-emitting diode chip for backlight unit 50 is produced to light-emitting diode chip for backlight unit 50.Heat Conduction Material in the heat radiation through hole 60 can comprise aluminium, copper, aluminium copper or other conductive metal or alloy.
Characteristics of the present invention are that except forming the required radium-shine boring of heat radiation through hole, other procedure for processing all is compatible with the processing and manufacturing process of general light-emitting diode, therefore can not increase the complexity and the processing cost of whole procedure for processing.Another characteristics of the present invention are, mat is positioned at the heat radiation through hole of light-emitting diode chip for backlight unit side, extra heat dissipation path except that the heat dissipating layer under the sapphire substrates is provided, touch heat dissipating layer because of the heat radiation through hole simultaneously, can further share the heat radiation load of heat dissipating layer, use and significantly improve whole radiating efficiency and luminous stability.
The above only is in order to explain preferred embodiment of the present invention; be not that attempt is done any pro forma restriction to the present invention according to this; therefore, all have in that identical creation spirit is following do relevant any modification of the present invention or change, all must be included in the category that the invention is intended to protect.
Claims (6)
1. the LED structure with gallium nitride system of a tool heat radiation through hole is characterized in that, comprising:
One sapphire substrates;
One heat dissipating layer is at the lower surface of this sapphire substrates; And
One light-emitting diode chip for backlight unit is gallium nitride based light-emitting diode chip for backlight unit, on the upper surface of this sapphire substrates, and has a luminous zone;
Wherein, this heat dissipating layer is in order to provide heat radiation, this LED structure with gallium nitride system has at least one heat radiation through hole, this heat radiation through hole runs through this light-emitting diode chip for backlight unit and sapphire substrates, and in the heat radiation through hole, fill up Heat Conduction Material, the heat radiation that touches heat dissipating layer with formation connects the road, and extra heat dissipation path is provided, and the heat that this light-emitting diode chip for backlight unit produced is conducted to the outside.
2. LED structure with gallium nitride system as claimed in claim 1 is characterized in that, this heat radiation through hole is to utilize radium-shine boring and form, and runs through the part beyond the luminous zone of this light-emitting diode chip for backlight unit.
3. LED structure with gallium nitride system as claimed in claim 1 is characterized in that this heat dissipating layer comprises aluminium, copper, aluminium copper.
4. LED structure with gallium nitride system as claimed in claim 1 is characterized in that this Heat Conduction Material comprises aluminium, copper, aluminium copper.
5. LED structure with gallium nitride system as claimed in claim 1 is characterized in that, this heat radiation through hole has a section, and this section is circular, rectangle or irregularly shaped.
6. LED structure with gallium nitride system as claimed in claim 1 is characterized in that, this heat radiation through hole has an arrangement mode, and this arrangement mode is for the luminous zone being one or more layers the concentric circles annular at center, or one or more layers rectangle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910180388 CN102054904B (en) | 2009-10-27 | 2009-10-27 | Gallium nitride light-emitting diode structure with radiating through holes |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200910180388 CN102054904B (en) | 2009-10-27 | 2009-10-27 | Gallium nitride light-emitting diode structure with radiating through holes |
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| Publication Number | Publication Date |
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| CN102054904A true CN102054904A (en) | 2011-05-11 |
| CN102054904B CN102054904B (en) | 2013-07-17 |
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| CN 200910180388 Expired - Fee Related CN102054904B (en) | 2009-10-27 | 2009-10-27 | Gallium nitride light-emitting diode structure with radiating through holes |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035591A (en) * | 2012-12-28 | 2013-04-10 | 日月光半导体制造股份有限公司 | Semiconductor encapsulation piece and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN2684381Y (en) * | 2003-12-29 | 2005-03-09 | 林文钦 | Combined structure of light emitting diode |
| KR100716790B1 (en) * | 2005-09-26 | 2007-05-14 | 삼성전기주식회사 | Gallium nitride based semiconductor light emitting diode and method of manufacturing the same |
| CN101320768A (en) * | 2007-06-08 | 2008-12-10 | 光宝科技股份有限公司 | Packaging method for LED |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035591A (en) * | 2012-12-28 | 2013-04-10 | 日月光半导体制造股份有限公司 | Semiconductor encapsulation piece and manufacturing method thereof |
| CN103035591B (en) * | 2012-12-28 | 2016-12-28 | 日月光半导体制造股份有限公司 | Semiconductor package assembly and a manufacturing method thereof |
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| CN102054904B (en) | 2013-07-17 |
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Granted publication date: 20130717 Termination date: 20131027 |